CN100438087C - Photoelectric element package process - Google Patents

Photoelectric element package process Download PDF

Info

Publication number
CN100438087C
CN100438087C CNB2005100683589A CN200510068358A CN100438087C CN 100438087 C CN100438087 C CN 100438087C CN B2005100683589 A CNB2005100683589 A CN B2005100683589A CN 200510068358 A CN200510068358 A CN 200510068358A CN 100438087 C CN100438087 C CN 100438087C
Authority
CN
China
Prior art keywords
photoelectric cell
wafer
protective layer
packaging technology
patterning protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CNB2005100683589A
Other languages
Chinese (zh)
Other versions
CN1858917A (en
Inventor
陈智龙
许健豪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Semiconductor Engineering Inc
Original Assignee
Advanced Semiconductor Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Engineering Inc filed Critical Advanced Semiconductor Engineering Inc
Priority to CNB2005100683589A priority Critical patent/CN100438087C/en
Publication of CN1858917A publication Critical patent/CN1858917A/en
Application granted granted Critical
Publication of CN100438087C publication Critical patent/CN100438087C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Dicing (AREA)

Abstract

The present invention relates to a packaging process of photoelectric elements. Firstly, the present invention is provided with a wafer. The wafer comprises a base and a plurality of photoelectric elements, wherein the photoelectric elements are arranged at the surface layer of the base, and each photoelectric element is provided with an active surface which is exposed outside the base. Then, a pattern protective layer is formed on the active surface, and the wafer is cut to form a plurality of wafer sheets. Each wafer sheet is provided with at least one photoelectric element, and each wafer sheet is respectively and electrically connected to a plurality of loaders. Finally, the pattern protective layer is removed. In the packaging process of photoelectric elements, the pattern protective layer on the active surface can prevent the photoelectric elements from being polluted by falling dust.

Description

The photoelectric cell packaging technology
Technical field
The present invention relates to a kind of component package technology (packaging process), particularly relate to a kind of photoelectric cell (photoelectric device) packaging technology.
Background technology
Society in information blast now, electronic product is dispersed throughout in the daily life, no matter be in clothing, food, lodging and transportion--basic necessities of life, still educating each side such as happy, all can be applied to the product that integrated circuit component is formed, and be accompanied by the continuous evolution of electronics technology, functional more complicated, more humane product is also constantly weeded out the old and bring forth the new.Because image is people's information expression way of being easy to accept most always, therefore in each electronic product, as optical electron products such as digital camera, digital code camera, mobile phone, scanners, just become the most popular consumption electronic products in the nature of things with the photograph or the function of making video recording.And in the optical electron product, most important electronic component is exactly image sensor photoelectric cells such as (image sensor).Certainly, the quality of photoelectric cell has just determined the output performance of optical electron product, has more determined the acceptance of consumer to product.
Seeing also shown in Figure 1A~Fig. 1 E, is the flow process and the section of structure of existing photoelectric cell packaging technology.At first see also shown in Figure 1A, existing photoelectric cell packaging technology is that a wafer 110 is provided earlier.Wafer 110 is made of with a plurality of photoelectric cell 114 substrate 112.Photoelectric cell 114 is disposed at the top layer of substrate 112.Each photoelectric cell 114 all has an active surface 116, and active surface 116 is to be exposed to outside the substrate 112.
Then see also shown in Figure 1B, on wafer 110, carry out projection technology (bumping), on wafer 110, to form a plurality of projections 118 that are electrically connected to photoelectric cell 114.
Then see also shown in Fig. 1 C, cutting crystal wafer 110 is to form a plurality of wafers 120.Each wafer 120 has at least one photoelectric cell 114.
Then see also shown in Fig. 1 D, each wafer 120 is electrically connected on a plurality of carriers 130 by projection 118 respectively.
See also at last shown in Fig. 1 E, configuration one mirror group 140 on each wafer 120, mirror group 140 is before being positioned at active surface 116.
Because photoelectric cell 114 is when work, extraneous light is to expose to active surface 116, be converted to image signal by photoelectric cell 114 again, therefore the cleaning of the active surface 116 of photoelectric cell 114 is just extremely important, and any scraping decreased or foreign matter attaches the function performance that all will have a strong impact on photoelectric cell 114.And in each step of above-mentioned existing photoelectric cell packaging technology, the particulate dust fall amount of process environments is not subjected to splendid control usually, therefore is easy to take place the phenomenon that dust fall adheres to or pollute the active surface 116 of photoelectric cell 114.Especially in the wafer step of cutting, a large amount of chips that cutting crystal wafer 110 is produced not only can adhere to or pollute active surface 116, more likely scrape and decrease active surface 116.Thus, the acceptance rate of photoelectric cell 114 will be had a strong impact on.
Therefore, how in the photoelectric cell packaging technology, avoid dust fall to adhere to or pollute the active surface of photoelectric cell,, just become the problem that needs to be resolved hurrily to improve the encapsulation acceptance rate of photoelectric cell.
This shows that above-mentioned existing photoelectric cell packaging technology obviously still has inconvenience and defective, and demands urgently further being improved in method and use.In order to solve the problem that the photoelectric cell packaging technology exists, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and general technology does not have appropriate method to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new photoelectric cell packaging technology, just become the current industry utmost point to need improved target.
Because the defective that above-mentioned existing photoelectric cell packaging technology exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new photoelectric cell packaging technology, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective that existing photoelectric cell packaging technology exists, and a kind of new photoelectric cell packaging technology, technical problem to be solved are provided is to make it be suitable for avoiding photoelectric cell to be polluted in packaging technology, thereby is suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of photoelectric cell packaging technology according to the present invention's proposition, may further comprise the steps: a wafer is provided, this wafer comprises a substrate and a plurality of photoelectric cell, this photoelectric cell is disposed at the top layer of this substrate, and each this photoelectric cell has an active surface respectively, and this active surface is exposed to outside this substrate; Form a patterning protective layer on this active surface; Cut this wafer to form a plurality of wafers, each this wafer has at least one this photoelectric cell; Electrically connect this wafer respectively to a plurality of carriers; And remove this patterning protective layer.
The object of the invention to solve the technical problems also adopts following technical measures further to realize.
Aforesaid photoelectric cell packaging technology, wherein said photoelectric cell comprises image sensor.
Aforesaid photoelectric cell packaging technology wherein after removing this patterning protective layer, also is included in configuration one mirror group on each this wafer, and this mirror group is to be positioned at irradiate light to the path of this active surface.
Aforesaid photoelectric cell packaging technology, wherein said patterning protective layer comprise photoresistance and dry film one of them.
Aforesaid photoelectric cell packaging technology, the method that wherein forms this patterning protective layer comprises: form a photoresist layer on this photoelectric cell of this wafer; And this photoresist layer exposed and develop, to form this patterning protective layer.
Aforesaid photoelectric cell packaging technology, the method that wherein electrically connects this wafer and this carrier comprise carries out a bump bond technology.
Aforesaid photoelectric cell packaging technology, the method for wherein carrying out this bump bond technology are to utilize the formed column gold projection of routing technology (gold stud bump) to engage.
Aforesaid photoelectric cell packaging technology, the method for wherein carrying out this bump bond technology are to utilize the formed golden projection of projection technology (gold bump) to engage.
Aforesaid photoelectric cell packaging technology, wherein electrically connecting this wafer is that routing engages with the method for this carrier.
Aforesaid photoelectric cell packaging technology wherein after removing this patterning protective layer, comprises that also carrying out the electricity slurry removes, and still remains in part on this active surface to remove this patterning protective layer.
Aforesaid photoelectric cell packaging technology, the method that wherein forms this patterning protective layer comprises: form all sidedly one not the patterning protective layer on this wafer; And this patterning protective layer not of patterning, to form this patterning protective layer, wherein this patterning protective layer exposes this wafer at least in order to be electrically connected to the surface of this carrier.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to achieve the above object, the invention provides a kind of photoelectric cell packaging technology, it is that a wafer is provided earlier.Wafer comprises a substrate and a plurality of photoelectric cell.Photoelectric cell is disposed at the top layer of substrate.Each photoelectric cell all has an active surface, and active surface is to be exposed to outside the substrate.Then form a patterning protective layer on active surface.Then cutting crystal wafer is to form a plurality of wafers.Each wafer has at least one photoelectric cell.Then each wafer is electrically connected to respectively on a plurality of carriers.Remove the patterning protective layer at last.
In these one embodiment of the invention, photoelectric cell for example is an image sensor.After removing the patterning protective layer, for example more on each wafer, dispose a mirror group, the mirror group is to be positioned at irradiate light to the path of active surface.The patterning protective layer for example is a photoresist layer, and for example is liquid photoresistance or dry film (dry film).The method that forms the patterning protective layer for example is to form a photoresist layer earlier on the photoelectric cell of wafer, the photoresist layer is exposed and development, to form the patterning protective layer again.Electrically connect wafer and the method for carrier and for example be and carry out bump bond or routing engages (wirebonding).When electrically connecting wafer and carrier with bump bond technology, its method for example is to utilize the formed column gold projection of routing technology (gold stud bump) to engage, or utilizes the formed golden projection of projection technology (gold bump) to engage.
In addition, after removing the patterning protective layer, for example more carry out electricity slurry and remove (plasma clean), still remain in part on the active surface to remove the patterning protective layer.
In addition, the method that forms the patterning protective layer for example is to form earlier one all sidedly the patterning protective layer is not on wafer, and this patterning protective layer not of patterning afterwards is to form the aforementioned pattern protective layer.Wherein, the patterning protective layer exposes aforementioned wafer at least in order to be electrically connected to the surface of carrier.
By technique scheme, photoelectric cell packaging technology of the present invention has following advantage at least:
In sum; in photoelectric cell packaging technology of the present invention; the active surface of photoelectric cell is owing to be coated with the patterning protective layer; no matter therefore be in wafer cutting or other step; the situation of damage can not take place to be adhered to, pollute or scrape by dust fall, chip in active surface; patterning protective layer on the active surface can protect photoelectric cell not to be subjected to the pollution of dust fall effectively, so can significantly promote the acceptance rate of photoelectric cell after finishing encapsulation.
In sum, the photoelectric cell packaging technology that the present invention is special, be suitable for avoiding photoelectric cell in packaging technology, to be polluted, and in class methods, do not see have similar design to publish or use and really genus innovation, no matter it is all having bigger improvement on manufacture method or on the function, have large improvement technically, and produced handy and practical effect, and more existing photoelectric cell packaging technology has the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A~Fig. 1 E is the flow process and the section of structure of existing photoelectric cell packaging technology.
Fig. 2 A~2H is the flow process and the section of structure of the photoelectric cell packaging technology of a preferred embodiment of the present invention.
Fig. 3 is the structural profile schematic diagram that adopts routing to engage in the photoelectric cell packaging technology.
110: wafer 112: substrate
114: photoelectric cell 116: active surface
118: projection 120: wafer
130: carrier 140: the mirror group
210: wafer 212: substrate
214: photoelectric cell 216: active surface
218: projection 220: wafer
230: carrier 240: the mirror group
250: patterning protective layer 252: the photoresist layer
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of photoelectric cell packaging technology, method, step, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Seeing also shown in Fig. 2 A~2H, is the flow process and the section of structure of the photoelectric cell packaging technology of a preferred embodiment of the present invention, and Fig. 3 is the structural profile schematic diagram that adopts routing to engage in the photoelectric cell packaging technology.
It is described at first to see also Fig. 2 A, and the photoelectric cell packaging technology of present embodiment is that a wafer 210 is provided earlier.Wafer 210 is made of with a plurality of photoelectric cell 214 substrate 212.Substrate 212 for example is Silicon Wafer (silicon wafer).Photoelectric cell 214 for example is to adopt semiconductor process techniques and the top layer that is formed at substrate 212.Photoelectric cell 214 for example be charge coupled cell (Charge CoupledDevice, CCD), complementary metal oxide semiconductor (Complementary Metal OxideSemiconductor, CMOS) or other forms of image sensor.Each photoelectric cell 214 all has an active surface 216, and active surface 216 is to be exposed to outside the substrate 212.Because extraneous light is to expose to active surface 216, be converted to image signal by photoelectric cell 214 again, therefore the cleaning of the active surface 216 of photoelectric cell 214 is just extremely important, and any scraping decreased or foreign matter attaches the function performance that all will have a strong impact on photoelectric cell 214.
Then see also shown in Fig. 2 B and Fig. 2 C, form a patterning protective layer 250 on active surface 216.Patterning protective layer 250 for example is photoresist layer (photoresist layer) or other dielectric layers.Form the method for patterning protective layer 250; for example be to form earlier the photoresist layer 252 (shown in Fig. 2 B) on wafer 210 of patterning not comprehensively; again photoresist layer 252 is exposed (exposure) and development (develop), to form patterning protective layer 252.When patterning protective layer 250 was photoresist layer, patterning protective layer 250 can adopt liquid photoresistance or dry film.In other words, the method for formation photoresist layer 252 for example is coating (coating) or attaches (paste).Certainly; the material of patterning protective layer 250 is not limited to photoresist; patterning protective layer 250 also can adopt and not have other dielectric materials of photoresistance characteristic, and patterning protective layer 250 also is not limited to and only covers active surface 216, as long as can be hedged off from the outer world active surface 216.
Then see also shown in Fig. 2 D, on wafer 210, form a plurality of projections 218 that are electrically connected to photoelectric cell 214.The material of projection 218 for example is a gold.Wherein, projection 218 for example is to utilize the formed column gold of routing technology projection (gold stud bump), or utilizes the formed golden projection of projection technology (gold bump) that comprises photolithography techniques.This step is to carry out when photoelectric cell 214 desires adopt the bump bond method to be electrically connected to carrier 230 as Fig. 2 F, if desire adopts routing to engage or during the mode of other electric connections, then do not carry out this step.Certainly, this step is promptly carried out after also being not limited to and forming patterning protective layer 250, as long as finish projection 218 before electrically connecting.And projection 218 also can be formed at earlier on the carrier 230 of Fig. 2 F.
Then see also shown in Fig. 2 E, cutting crystal wafer 210 is to form a plurality of wafers 220.Each wafer 220 has at least one photoelectric cell 214.In this step, owing to be coated with patterning protective layer 250 on the active surface 216 of photoelectric cell 214, so a large amount of chips that cutting crystal wafer 210 is produced can not adhere to, pollute or scrape damage active surface 216 fully.
Then see also shown in Fig. 2 F, each wafer 220 is electrically connected on a plurality of carriers 230 by projection 218 respectively.Certainly, wafer 220 also can adopt routing to engage (as shown in Figure 3) or other modes and be electrically connected on the carrier 230.
Then see also shown in Fig. 2 G, remove patterning protective layer 250, its method for example is to use liquid medicine and clear water to wash alternately.Still have residue on active surface 216 if can't remove patterning protective layer 250 fully, then can carry out the electricity slurry and remove not have any residue on the active surface 216 of guaranteeing photoelectric cell 214.So far, promptly roughly finish the photoelectric cell packaging technology.
Then see also shown in Fig. 2 H, after removing patterning protective layer 250, can on each wafer 220, dispose a mirror group 240 again.Mirror group 240 is to be positioned on the path that extraneous light exposes to active surface 216, with extraneous image is for example complete and be incident upon fifty-fifty on the active surface 216 of photoelectric cell 214.
It should be noted that the patterning protective layer 252 shown in Fig. 2 C is exposing wafer 220 at least in order to being electrically connected to the surface of carrier 230, and cover all active surfaces 216 at least.In other words, patterning protective layer 252 forms projections or routing and engages the employed joint sheet (bonding pad) except exposing wafer 220, is to be good to cover every other surface.The purpose of this design all can completely cut off produced pollution thing in the technologies by patterning protective layer 252 in the most surfaces that makes wafer 220, and then protection active surface 216.
In sum, in photoelectric cell packaging technology of the present invention, be that the active surface with photoelectric cell begins promptly to cover a patterning protective layer in technology, and just the patterning protective layer removed in the final stage of processing step.Therefore, even do not control particulate dust fall amount in the process environments in more harsh standard, the active surface of photoelectric cell can not adhered to by dust fall or pollute yet.Simultaneously, the chip that is produced in the wafer cutting process can not adhere to yet, pollutes or scrape the active surface that decreases photoelectric cell.So photoelectric cell packaging technology of the present invention not only can be saved the required cost of control particulate dust fall amount, more can significantly promote the yield of photoelectric cell after finishing encapsulation.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.

Claims (11)

1, a kind of photoelectric cell packaging technology is characterized in that it may further comprise the steps:
One wafer is provided, and this wafer comprises a substrate and a plurality of photoelectric cell, and this photoelectric cell is disposed at the top layer of this substrate, and each this photoelectric cell has an active surface respectively, and this active surface is to be exposed to outside this substrate;
Form a patterning protective layer on this active surface;
Cut this wafer to form a plurality of wafers, each this wafer has at least one this photoelectric cell;
Electrically connect this wafer respectively to a plurality of carriers; And
Remove this patterning protective layer.
2, photoelectric cell packaging technology according to claim 1 is characterized in that wherein said photoelectric cell comprises image sensor.
3, photoelectric cell packaging technology according to claim 2 is characterized in that after removing this patterning protective layer, also is included in configuration one mirror group on each this wafer, and this mirror group is to be positioned at irradiate light to the path of this active surface.
4, photoelectric cell packaging technology according to claim 1, it is characterized in that wherein said patterning protective layer comprise liquid photoresistance and dry film one of them.
5, photoelectric cell packaging technology according to claim 1 is characterized in that the method that wherein forms this patterning protective layer comprises:
Form a photoresist layer on this photoelectric cell of this wafer; And
This photoresist layer is exposed and development, to form this patterning protective layer.
6, photoelectric cell packaging technology according to claim 1, the method that it is characterized in that wherein electrically connecting this wafer and this carrier comprises carries out a bump bond technology.
7, photoelectric cell packaging technology according to claim 6, the method that it is characterized in that wherein carrying out this bump bond technology are to utilize the formed column gold projection of routing technology (gold studbump) to engage.
8, photoelectric cell packaging technology according to claim 6, the method that it is characterized in that wherein carrying out this bump bond technology is to utilize the formed golden projection of projection technology (gold bump) to engage.
9, photoelectric cell packaging technology according to claim 1, it is characterized in that wherein electrically connecting this wafer is that routing engages with the method for this carrier.
10, photoelectric cell packaging technology according to claim 1 is characterized in that wherein after removing this patterning protective layer, comprises that also carrying out the electricity slurry removes, and still remains in part on this active surface to remove this patterning protective layer.
11, photoelectric cell packaging technology according to claim 1 is characterized in that the method that wherein forms this patterning protective layer comprises:
Form a photoresist layer all sidedly on this wafer; And
This photoresist layer is exposed and development, and to form this patterning protective layer, wherein this patterning protective layer exposes this wafer at least in order to be electrically connected to the surface of this carrier.
CNB2005100683589A 2005-05-08 2005-05-08 Photoelectric element package process Active CN100438087C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2005100683589A CN100438087C (en) 2005-05-08 2005-05-08 Photoelectric element package process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2005100683589A CN100438087C (en) 2005-05-08 2005-05-08 Photoelectric element package process

Publications (2)

Publication Number Publication Date
CN1858917A CN1858917A (en) 2006-11-08
CN100438087C true CN100438087C (en) 2008-11-26

Family

ID=37297798

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100683589A Active CN100438087C (en) 2005-05-08 2005-05-08 Photoelectric element package process

Country Status (1)

Country Link
CN (1) CN100438087C (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150178A (en) * 1996-11-19 1998-06-02 Matsushita Electron Corp Solid-state image sensing device and its manufacture
CN1476065A (en) * 2003-05-15 2004-02-18 王鸿仁 Image sensor packaging method
TWI225308B (en) * 2003-07-30 2004-12-11 Kingpak Tech Inc Packaging structure for image sensor module and the manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150178A (en) * 1996-11-19 1998-06-02 Matsushita Electron Corp Solid-state image sensing device and its manufacture
CN1476065A (en) * 2003-05-15 2004-02-18 王鸿仁 Image sensor packaging method
TWI225308B (en) * 2003-07-30 2004-12-11 Kingpak Tech Inc Packaging structure for image sensor module and the manufacturing method thereof

Also Published As

Publication number Publication date
CN1858917A (en) 2006-11-08

Similar Documents

Publication Publication Date Title
KR100592368B1 (en) Ultra-thin module manufacturing method of semiconductor device
US7345349B2 (en) Solid state imaging device and producing method thereof
CN101292357B (en) Microelectronic imaging devices and associated methods for attaching transmissive elements
US6737292B2 (en) Method of fabricating an image sensor module at the wafer level and mounting on circuit board
TW200834907A (en) Image sensor module
US20090068785A1 (en) Manufacturing method of image sensor device
CN101414613A (en) Wafer level package and mask for fabricating the same
CN101304015B (en) Semiconductor device and manufacturing method thereof
CN105374837A (en) Chip package and method for manufacturing the same
JP5010661B2 (en) Electronic device and method for manufacturing electronic device
FR2960701A1 (en) METHOD OF MANUFACTURING SEMICONDUCTOR COMPONENTS AND COMPONENTS THUS OBTAINED
JP4384417B2 (en) Manufacturing method of image sensor with built-in lens
CN105185798A (en) Wafer-level packaging method of back-illuminated image sensor and packaging structure
CN100438087C (en) Photoelectric element package process
US8304288B2 (en) Methods of packaging semiconductor devices including bridge patterns
CN101211791B (en) Wafer-grade chip packaging process and chip packaging structure
KR100877879B1 (en) Method for fabricating image sensor
KR100922837B1 (en) Wafer level chip scale package of silicon image sensor using micro via hole connection and method for manufacturing the same
CN205645813U (en) Imaging sensor module
KR100897761B1 (en) Wafer level package of silicon image sensor using through via process and method for manufacturing the same
CN105118841A (en) Wafer level packaging method of back-illuminated image sensor and packaging structure thereof
KR20050011199A (en) Fabricating method for image sensor with pad open photoresist
CN114573238A (en) Thinning method of CIS glass cover
KR100980096B1 (en) Wafer level chip size package for IC devices using dicing process and method for manufacturing the same
KR20060077114A (en) Method for fabricating module of semiconductor chip

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant