JPH10150058A - Device for manufacturing semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To join a semiconductor element to a package without deteriorating life characteristics of the semiconductor element. SOLUTION: When a package 1 is joined to a semiconductor element 2, under such a condition that low-melting-point solder material 3 is provided between the package and element, the element 2 is put in its temperature balanced state under actual operating temperature conditions. Under this condition, electrode pads 9 on pellets of the element 2 are compressed against electrode terminals 8 of a suction collet 5 electrically connected with an output side of a high-voltage pulse power supply 4, so that the pads are electrically connected with the terminals 8. Next, a high voltage pulse generated by the power supply 4 is applied to the pads 9 so that the solder material 3 melts, thereby realizing joint between the package 1 and element 2. Thereby the joint can be done under actual operating temperature conditions of the element 2, thermal stress to the element 2 can be suppressed, and life characteristics of the element can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an apparatus and a method for manufacturing a semiconductor device, and more particularly to an apparatus and a method for manufacturing a semiconductor device used for bonding a semiconductor element to a package.

[0002]

2. Description of the Related Art FIG. 4 shows a conventional semiconductor device manufacturing apparatus and a manufacturing method used for bonding a semiconductor element to a package. The semiconductor element 2 is mounted on the package 1 as shown in a schematic cross-sectional view including the low melting point solder material 3, the side metallization 7 and the heater 10, and the low melting point solder material 3, for example, AuSn or the like, is used. The melting point solder material is heated by the heater 10 and left for a certain time under a constant temperature condition of about the melting point (320 ° C. in the case of AuSn) of the low melting point solder material 3, and the semiconductor is left. A method of joining the element 2 and the package 1 with the melted low melting point solder material 3 is generally well known.

[0003]

In the above-described conventional semiconductor device for bonding a semiconductor element and a package and a method of manufacturing the same, the actual use temperature of the semiconductor element 2 in FIG. Is about 130, but the semiconductor element 2 at such an actual operating temperature is
On the other hand, at the junction with the package 1, the low melting point solder material 3 is left to be heated to a melting point of about 320 ° C. As a result, due to the difference between the temperature condition at the time of bonding and the temperature condition at the time of actual use of the semiconductor element 2 and the difference of the thermal expansion coefficient of each related member, the low melting point solder is applied to the semiconductor element 2. A state in which stress is applied by the material 3 and the package 1 appears,
There is a drawback that it becomes one factor of the deterioration of the life of the semiconductor element 2.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of reducing the influence of stress applied to a semiconductor element and improving the life of the semiconductor element when the package is joined to the semiconductor element. It is to provide a manufacturing method.

[0005]

According to a first aspect of the present invention, there is provided an apparatus for manufacturing a semiconductor device, comprising a suction collet, wherein the semiconductor device is used for bonding a package and a semiconductor element. When the package and the semiconductor element are joined, a specific high-voltage pulse that is pressed against the electrode pad of the semiconductor element and input to the suction collet for melting the joining solder is transmitted to the electrode pad. It is characterized by having a specific electrode terminal.

Further, according to a second aspect of the invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of:
A first step of mounting the semiconductor element with the low melting point solder material interposed therebetween and maintaining the semiconductor element in a temperature equilibrium state under actual operating temperature conditions of the semiconductor element; A second step of pressing a corresponding surface of the semiconductor element against the semiconductor element to set the electrode pad of the semiconductor element and the electrode terminal of the suction collet in an electrically connected state; A pulse is applied through the electrode terminal of the suction collet and the electrode pad of the semiconductor element, and the low melting point solder material between the package and the semiconductor element is electrically heated through the metallization / via hole of the semiconductor element. 3rd to fuse package and semiconductor element
And the following steps.

Further, in the method of manufacturing a semiconductor device according to the third invention, a low melting point solder material is provided on a package to be joined to a plurality of semiconductor elements including first to n-th (positive integer) semiconductor elements. A first step of placing the plurality of semiconductor elements in a state inserted between the plurality of semiconductor elements and maintaining the plurality of semiconductor elements in a temperature equilibrium state under actual use temperature conditions of the plurality of semiconductor elements; A second step of pressing a surface corresponding to the first semiconductor element against the first semiconductor element and setting an electrode pad of the semiconductor element and an electrode terminal of the suction collet in an electrically connected state; And applying a high voltage pulse for melting the solder through the electrode terminal of the adsorption collet and the electrode pad of the semiconductor element, and through the side metallization / via hole of the semiconductor element. A third step of electrically heating and melting the low melting point solder material between the package and the semiconductor element to join the package and the semiconductor element; and following the third step, a second to an n-th step The semiconductor device is characterized in that the first, second, and third steps are sequentially and individually performed for each semiconductor device, and the semiconductor device is bonded to the package.

[0008]

Next, the present invention will be described with reference to the drawings.

FIG. 1 is a schematic diagram showing a cross section of the structure of the first embodiment of the present invention when the package and the semiconductor element are joined.
A semiconductor element 2, a low melting point solder material 3, a via hole 6, a side metallization 7, and an electrode pad 9 corresponding to the semiconductor element 2, an adsorption collet provided with a high voltage pulse power supply 4, and an electrode terminal 8 5 is shown. Hereinafter, with reference to FIG. 1, an operation content and a procedure when the package 1 and the semiconductor element 2 of the present embodiment are joined will be described.

Referring to FIG. 1, a semiconductor element 2 includes a package 1 with a low-melting-point solder material 3, for example, a low-melting-point solder material such as AuSn inserted in the same manner as in the conventional example.
Placed on In this state, the semiconductor element 2 is left for a certain time under the actual use temperature condition, and is in a temperature equilibrium state under the temperature condition. A via hole 6 or a side metallization 7 is formed in the semiconductor element 2 (FIG. 1 shows a case where both the via hole 6 and the side metallization 7 are formed), and an electrode on the surface of the pellet is formed. The pad 9 is set so as to be electrically connected to the back surface of the semiconductor element 2.

On the other hand, the suction collet 5 electrically connected to the pulse voltage output side of the high-voltage pulse power supply 4 has a pulse voltage output of the high-voltage pulse power supply 4 on a surface corresponding to the semiconductor element 2. An electrically connected electrode terminal 8 is provided, and the suction collet 5 itself is similarly maintained under the temperature condition heated to the actual use temperature of the semiconductor element 2. In this case, the package 1 is kept at the ground potential.

The procedure for joining the package 1 to the semiconductor element 2 is as follows. First, the surface of the suction collet 5 corresponding to the semiconductor element 2 is pressed against the semiconductor element 2 so that the electrode pad 9 of the semiconductor element 2 and the suction collet 5 Is electrically connected to the electrode terminal 8. Then, the high-voltage pulse power supply 4 is activated to generate the generated high-voltage pulse (for example, as shown in FIG.
A voltage of 0 V, a current of 20 mA and a pulse width of 1.0 μA is applied to the electrode pad 9 of the semiconductor element 2 from the electrode terminal 8 of the suction collet 5, and the side metallization 7 or the via hole 6 of the semiconductor element 2 is applied. Through the low melting point solder material 3 inserted between the package 1 and the semiconductor element 2, the low melting point solder material 3 is electrically heated and melted. Thus, the package 1 and the semiconductor element 2 are effectively joined in a state where only the area near the low melting point solder material 3 is limited and the heating temperature is increased.

Therefore, according to the bonding method of the package 1 and the semiconductor element 2 according to the present embodiment, the bonding is performed by melting the low melting point solder material 3 by a high voltage pulse having a very short pulse width. As described above, it is no longer necessary to join the package 1 and the semiconductor element 2 under the melting point temperature condition of the low melting point solder material 3, and the heat treatment only in the area near the low melting point solder material 3 is performed. , It is possible to effectively join the two,
Generation of stress between members due to the difference between the bonding temperature condition and the actual use temperature condition of the semiconductor element 2 is suppressed, and the life characteristics of the semiconductor element 2 are improved. In addition, since the low melting point solder material 3 is melted by a high voltage pulse to perform the bonding, the package 1 and the semiconductor element 2 to be bonded are kept under an arbitrary temperature condition while maintaining the temperature equilibrium. Bonding is performed, whereby the semiconductor element 2 can be bonded to the package 1 under a temperature condition lower than the melting point temperature without being restricted by the melting point temperature of the low melting point solder material 3.

Next, a second embodiment of the present invention will be described. FIG. 3 is a diagram schematically illustrating a configuration of the package and the semiconductor element of the present embodiment at the time of bonding, as in the case of the first embodiment, in a schematic view in cross-section.
A package 1, a plurality of semiconductor elements 2, a low melting point solder material 3, via holes 6, side metallizations 7 and electrode pads 9 corresponding to these individual semiconductor elements 2, a high voltage pulse power supply 4, and an electrode terminal 8 The relationship with the suction collet 5 provided with is shown. First of this embodiment
This embodiment is different from the first embodiment in that a procedure is used in which a plurality of semiconductor elements 2 are individually and sequentially joined to a package 1 by a suction collet 5 in the present embodiment. The joining procedure between the semiconductor device 1 and the individual semiconductor elements 2 is exactly the same as the joining procedure in the first embodiment. In the present embodiment, since a procedure in which a plurality of semiconductor elements 2 are sequentially and individually bonded is adopted, when a certain semiconductor element 2 is bonded to the package 1, other semiconductor elements 2 are thermally connected to each other. The bonding process is performed in a state independent of the semiconductor device 2 of this example, whereby a new thermal stress accompanying the bonding process is applied to the other semiconductor devices 2 already bonded to the package 1. Is completely avoided, and the package 1 and the plurality of semiconductor elements 2 are smoothly joined.

Needless to say, in this embodiment,
As in the case of the first embodiment, the generation of stress between members due to the difference between the bonding temperature condition and the actual use temperature condition of the semiconductor element 2 is suppressed, the life characteristics of the semiconductor element 2 are improved, and The semiconductor element 2 can be joined to the package 1 under a temperature condition lower than the melting point temperature without being restricted by the melting point temperature of the melting point solder material 3.

[0016]

As described above, according to the present invention, a low-melting-point solder material is melted and joined by a high-voltage pulse having a very short pulse width, whereby the low-melting-point solder material is melted under the melting temperature condition. Bonding becomes unnecessary, and bonding can be performed by heat treatment only in the vicinity of the low-melting-point solder material. Stress between members due to the difference between the bonding temperature condition and the actual use temperature condition is suppressed, There is an effect that the life characteristics of the semiconductor element can be improved.

Further, by melting the low melting point solder material by the high voltage pulse, the package and the semiconductor element to be joined are not restricted by the melting point temperature of the low melting point solder material, but under a temperature condition lower than the melting point temperature. There is an effect that it can be joined in.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a semiconductor element, related members, related equipment, and the like according to a first embodiment of the present invention.

FIG. 2 is a diagram showing an operation waveform example of a high voltage pulse.

FIG. 3 is a schematic diagram of a cross section showing a semiconductor element, related members, related equipment, and the like in a second embodiment of the present invention.

FIG. 4 is a schematic view of a cross section showing a semiconductor device, related members, related devices and the like in a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Package 2 Semiconductor element 3 Low melting point solder material 4 High voltage pulse power supply 5 Suction collet 6 Via hole 7 Side metallization 8 Electrode terminal 9 Electrode pad 10 Heater

Claims (3)

[Claims] 1. An apparatus for manufacturing a semiconductor device comprising a suction collet and used when bonding a package and a semiconductor element, wherein the suction collet is used for bonding the semiconductor element when the package and the semiconductor element are bonded. A manufacturing method of a semiconductor device, comprising: a specific electrode terminal that is pressed against an electrode pad and transmits a specific high-voltage pulse input to the adsorption collet for melting a bonding solder to the electrode pad. apparatus. 2. The semiconductor device is mounted on a package to be joined to the semiconductor device with a low-melting-point solder material interposed therebetween, and the semiconductor device is brought into a temperature equilibrium state under actual operating temperature conditions of the semiconductor device. A first step of holding, and in the temperature equilibrium state, a surface of the suction collet corresponding to the semiconductor element is pressed against the semiconductor element;
A second step of electrically connecting the electrode pad of the semiconductor element and the electrode terminal of the suction collet; and applying a high voltage pulse for solder melting to the electrode terminal of the suction collet and the electrode pad of the semiconductor element. And electrically heating and melting the low melting point solder material between the package and the semiconductor element through the side metallization / via hole of the semiconductor element to join the package and the semiconductor element. A method for manufacturing a semiconductor device, comprising: 3. A plurality of semiconductor elements including a first to n-th (positive integer) semiconductor elements, the plurality of semiconductor elements being bonded to each other with a low melting point solder material inserted therebetween. A first step of mounting and maintaining a temperature equilibrium state under actual use temperature conditions of the plurality of semiconductor elements; and, in the temperature equilibrium state, a corresponding surface of the adsorption collet with respect to the first semiconductor element, A second step of crimping against one semiconductor element and setting an electrode pad of the semiconductor element and an electrode terminal of the suction collet to an electrically connected state; and applying a high-voltage pulse for melting the solder, It is applied through the electrode terminal of the suction collet and the electrode pad of the semiconductor element, and through the side metallization / via hole of the semiconductor element, the low melting point between the package and the semiconductor element. A third step of electrically heating and melting the solder material to join the package and the semiconductor element; and following the third step, the first, second, and n-th semiconductor elements are targeted. A method for manufacturing a semiconductor device, comprising a step of performing the second and third steps sequentially and individually for each semiconductor element and joining the semiconductor element to the package.