KR20000032369A - Soldering structure and method of metal material and ceramic board by using metal net - Google Patents

Soldering structure and method of metal material and ceramic board by using metal net Download PDF

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Publication number
KR20000032369A
KR20000032369A KR1019980048803A KR19980048803A KR20000032369A KR 20000032369 A KR20000032369 A KR 20000032369A KR 1019980048803 A KR1019980048803 A KR 1019980048803A KR 19980048803 A KR19980048803 A KR 19980048803A KR 20000032369 A KR20000032369 A KR 20000032369A
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South Korea
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ceramic substrate
soldering
metal plate
solder
metal
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KR1019980048803A
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Korean (ko)
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주경진
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에릭 발리베
발레오만도전장시스템스코리아 주식회사
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Priority to KR1019980048803A priority Critical patent/KR20000032369A/en
Publication of KR20000032369A publication Critical patent/KR20000032369A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)

Abstract

PURPOSE: A soldering structure and a method of a metal material and ceramic board are provided to solder by inserting a copper net in soldering a metal plate attached with a power transistor on a ceramic board. CONSTITUTION: A power transistor(10) is adhered to a metal plate(30) by using solder(20). After the solder is covered on a position of a ceramic board where to be soldered, the metal plate is soldered with the ceramic board. A copper net(40) is inserted between the metal plate and the ceramic board. The metal plate and the ceramic board are compressed in a state that the solder is melted. Accordingly, the melted solder is absorbed into a narrow gap of the copper net by a capillary event and the metal plate and the copper board are soldered. Thereby, the metal plate and the ceramic board are soldered, and a wire(70) is bonded between the power transistor and the ceramic board.

Description

금속망사를 이용한 금속재료와 세라믹기판의 납땜구조 및 방법Soldering Structure and Method of Metal Materials and Ceramic Substrates Using Metal Mesh

본 발명은 금속망사를 이용한 금속재료와 세라믹기판의 납땜구조 및 방법에 관한 것으로, 상세하게는 세라믹기판에 파워트랜지스터가 부착된 금속판을 납땜할 때 그 사이에 구리망사를 삽입시켜 납땜을 하는 금속망사를 이용한 금속재료와 세라믹기판의 납땜구조 및 방법에 관한 것이다.The present invention relates to a soldering structure and method of a metal material and a ceramic substrate using a metal mesh, and more particularly, a metal mesh soldered by inserting a copper mesh therebetween when soldering a metal plate having a power transistor attached to the ceramic substrate. It relates to a soldering structure and method of a metal material and a ceramic substrate using.

일반적으로 차량의 발전기에는 전압조정기가 설치된다. 이 전압조정기에는 세라믹기판위에 여러 가지 부품들이 납땜되어 있다.In general, a voltage regulator is installed in a generator of a vehicle. In this voltage regulator, several components are soldered onto a ceramic substrate.

전압조정기는 발전기의 계자코일에 흐르는 전류를 제어하기 위하여 파워트랜지스터를 구비하는데, 이 파워트랜지스터는 대 전류를 스위칭시키기 때문에 파워트랜지스터에서 많은 열이 발생한다.The voltage regulator includes a power transistor to control the current flowing in the field coil of the generator, which generates a large amount of heat in the power transistor because it switches a large current.

그래서 파워트랜지스터에서 발생하는 열을 방열시키기 위하여 파워트랜지스터와 세라믹기판사이에는 세심한 주의를 요한다.Therefore, it is necessary to pay close attention between the power transistor and the ceramic substrate to dissipate heat generated from the power transistor.

도 1은 종래의 세라믹기판과 금속판을 납땜한 부분을 나타낸 단면도이다.1 is a cross-sectional view showing a portion where a conventional ceramic substrate and a metal plate are soldered.

파워트랜지스터와 세라믹기판의 납땜방법을 설명하면 다음과 같다.The soldering method of the power transistor and the ceramic substrate is explained as follows.

먼저 파워트랜지스터(1)를 금속판(3)과 납땜을 하는데, 이때에는 플럭스(FLUX) 무첨가형 땜납(2)을 이용하여 납땜을 한다. 그리고 나서 파워트랜지스터(1)가 납땜되어 있는 금속판(3)을 세라믹기판(4)과 납땜을 한다.First, the power transistor 1 is soldered with the metal plate 3, and at this time, soldering is performed using a flux-free solder (FLUX). Then, the metal plate 3 to which the power transistor 1 is soldered is soldered with the ceramic substrate 4.

파워트랜지스터(1)가 납땜되어 있는 금속판(3)을 세라믹기판(4)과 납땜할 때에는 플럭스가 첨가되어 있는 플럭스 첨가형 땜납(5)으로 납땜을 한다.When soldering the metal plate 3 to which the power transistor 1 is soldered with the ceramic substrate 4, the flux-added solder 5 to which the flux is added is soldered.

그런데 파워트랜지스터(1)가 납땜되어 있는 금속판(3)을 플럭스 첨가형 땜납(5)을 이용하여 세라믹기판(4)과 납땜을 하게되면, 고온에 의하여 땜납에 포함되어 있는 플럭스가 폭발을 하게 된다. 플럭스가 폭발을 하게되면 금속판(3)과 세라믹기판(4)사이에 보이드(void)(6)가 형성되게 된다.However, when the metal plate 3 to which the power transistor 1 is soldered is soldered with the ceramic substrate 4 using the flux-added solder 5, the flux contained in the solder is exploded due to the high temperature. When the flux explodes, a void 6 is formed between the metal plate 3 and the ceramic substrate 4.

그래서 보이드(void)(6)에 의하여 파워트랜지스터(1)가 납땜되어 있는 금속판(3)과 세라믹기판(4)사이의 납땜 접착력이 약화되고 파워트랜지스터(1)에서 발생된 열이 세라믹기판(4)으로 충분히 전달되지 않아 파워트랜지스터(1)에서 발생된 열이 제대로 방열되지 못하게 된다.Therefore, the solder adhesion between the metal plate 3 and the ceramic substrate 4 on which the power transistor 1 is soldered by the void 6 is weakened, and the heat generated in the power transistor 1 is transferred to the ceramic substrate 4. ), The heat generated from the power transistor 1 is not properly radiated.

이러한 현상에 의하여 파워트랜지스터는 열 폭주하게 되고 심지어는 파워트랜지스터(1)가 열에 의하여 손상되어 전압조정기가 기능을 상실하게 되는 문제점이 있었다. 또한 금속판(3)과 세라믹기판(4)의 열 팽창률이 달라서 온도 변화에 의하여 땜납(5)의 부위에 스트레스(stress)가 쌓여 땜납의 부위가 부스러지는 문제점이 있었다.Due to this phenomenon, the power transistors are thermally runaway, and even the power transistor 1 is damaged by heat, so that the voltage regulator loses its function. In addition, since the thermal expansion coefficients of the metal plate 3 and the ceramic substrate 4 are different, there is a problem that stress is accumulated on the solder 5 due to temperature change, and the solder portion is crumbly.

본 발명은 전술한 문제를 해결하기 위하여, 세라믹기판에 파워트랜지스터가 부착된 금속판을 납땜할 때 그 사이에 구리망사를 삽입시켜 납땜을 하는 금속망사를 이용한 금속재료와 세라믹기판의 납땜구조 및 방법을 제공하는데 목적이 있다.In order to solve the above problems, the present invention provides a soldering structure and method for soldering a metal material and ceramic substrate using a metal mesh in which a copper mesh is inserted and soldered when soldering a metal plate having a power transistor attached to the ceramic substrate. The purpose is to provide.

도 1은 종래의 세라믹기판과 금속판을 납땜한 부분을 나타낸 단면도이다.1 is a cross-sectional view showing a portion where a conventional ceramic substrate and a metal plate are soldered.

도 2는 본 발명에 따른 금속망사를 이용한 금속재료와 세라믹기판의 납땜 공정도이다.2 is a soldering process diagram of a metal material and a ceramic substrate using a metal mesh according to the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

10:파워트랜지스터 20:땜납10: power transistor 20: solder

30:금속판 40:금속망사30: metal plate 40: metal mesh

50:땜납 60:세라믹기판50 solder 60 ceramic substrate

상기 목적을 달성하기 위한 본 발명은, 발열소자가 부착되어 있는 금속판과 세라믹기판을 납땜하여 결합하는 납땜구조에 있어서, 납땜에 금속망사를 삽입하는 것을 특징으로 하는 구조이다. 그리고, 발열소자가 부착되어 있는 금속판과 세라믹기판사이의 납땜방법에 있어서, 세라믹기판의 상부에 땜납을 입히는 땜납도포단계, 땜납도포단계 후 금속재료의 납땜하고자 하는 면과 상기 세라믹기판에 땜납이 입혀져 있는 면 사이에 금속망사를 삽입하는 망사삽입단계, 망사삽입단계 후 상호 압착 납땜하는 납땜단계를 포함하는 것을 특징으로 하는 방법이다.The present invention for achieving the above object is a structure in which a metal mesh is inserted into a soldering structure in a soldering structure for soldering and bonding a metal plate and a ceramic substrate to which a heating element is attached. Then, in the soldering method between the metal plate and the ceramic substrate to which the heating element is attached, solder is applied to the upper surface of the ceramic substrate and the surface to be soldered of the metal material and the ceramic substrate are soldered after the solder coating step. It is a method characterized in that it comprises a mesh inserting step of inserting a metal mesh between the surfaces, the soldering step of mutual compression soldering after the mesh insertion step.

이하에서는 첨부한 도면을 참조하여 양호한 실시 예를 상세하게 설명하겠다.Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 따른 금속망사를 이용한 금속재료와 세라믹기판의 납땜 공정도이다.2 is a soldering process diagram of a metal material and a ceramic substrate using a metal mesh according to the present invention.

차량 발전기의 전압조정기는 발전기에서 발전된 전압이 배터리에 충전되도록 혹은 차량의 전기부하에 일정한 전압을 공급되도록 제어하는 역할을 한다. 전압조정기는 하나의 세라믹기판상에서 다수의 소자들이 납땜되어 형성되는데 그 중의 하나가 필드코일에 전류를 인가하거나 차단하는 소자인 파워트랜지스터이다.The voltage regulator of the vehicle generator controls the voltage generated by the generator to be charged to the battery or to supply a constant voltage to the electric load of the vehicle. The voltage regulator is formed by soldering a plurality of devices on one ceramic substrate, one of which is a power transistor which is a device for applying or blocking current to a field coil.

전술한 납땜을 살펴보면 다음과 같다.Looking at the solder described above is as follows.

납땜이란 접합되는 재료의 용융점보다 낮은 용융점을 가진 땜납을 사용해서 모재를 녹이지 않고 접합하는 것이다. 납땜재료는 경납, 연납과, 플럭스로 분류되고, 다시 경납과 연납은 그 용융점에 따라서 450℃를 경계로 분류된다. 먼저 경납은, 주로 강도를 요구하는 개소에 사용되며, 전선의 접속, 전기 기기 등에 이용된다. 한편 플럭스(flux)의 목적은 모재금속과 납합금이 접합하기 쉽게 이들 사이에 있는 산화피막을 제거하고, 더구나 작업중의 산화를 방지하고 접합을 돕기 위하여 사용되는 것이다.Soldering is the joining of the base metal without melting using solder having a melting point lower than the melting point of the joined material. The brazing material is classified into braze, braze and flux, and braze and braze are further classified at 450 ° C according to their melting point. First, brazing is mainly used for the place which requires strength, and is used for connection of an electric wire, an electric device, etc. On the other hand, the purpose of the flux (x) is to be used to remove the oxide film between the base metal and the lead alloy to facilitate the bonding, to further prevent the oxidation during the operation and to assist the bonding.

금속망사를 이용한 소자(파워트랜지스터)와 세라믹기판의 납땜을 설명하면 다음과 같다.The soldering of a device (power transistor) and a ceramic substrate using a metal mesh will be described as follows.

먼저 소자(이하 파워트랜지스터라 칭하며, 동작시 열이 발생되는 모든 발열소자가 적용된다.)(10)를 준비한다(도 2 a). 파워트랜지스터(10)를 땜납(20)을 이용하여 금속판(30)에 접착한다. 이때에는 플럭스(FLUX) 무첨가형 땜납을 이용하여 납땜을 한다(도 2 b).First, a device 10 (hereinafter referred to as a power transistor and all heat generating devices in which heat is generated during operation is applied) 10 is prepared (FIG. 2 a). The power transistor 10 is bonded to the metal plate 30 using the solder 20. At this time, soldering is performed using flux-free solder (FIG. 2B).

그리고 나서 파워트랜지스터(10)가 납땜되어 있는 금속판(30)을 세라믹기판(60)과 납땜을 하는데, 그 전에 세라믹기판(60)상 납땜이 될 자리에 땜납(50)을 입힌다.Then, the metal plate 30 to which the power transistor 10 is soldered is soldered with the ceramic substrate 60. Before that, the solder 50 is applied to the place where the power transistor 10 is to be soldered.

세라믹기판(60)에 땜납(50)을 입히고 나면 금속판(30)과 세라믹기판(60)의 사이에 금속망사인 구리망사(40)를 삽입한다. 그리고 나서 세라믹기판(60)위의 땜납(50)이 녹은 상태에서 금속판(30)과 세라믹기판(60)을 압착한다. 땜납은 플럭스가 첨가되어 있는 플럭스 첨가형 땜납을 이용한다.After the solder 50 is coated on the ceramic substrate 60, the copper mesh 40, which is a metal mesh, is inserted between the metal plate 30 and the ceramic substrate 60. Then, the metal plate 30 and the ceramic substrate 60 are pressed in the state where the solder 50 on the ceramic substrate 60 is melted. Solder uses flux-added solder to which flux is added.

구리망사(40)를 사이에 두고 금속판(30)과 세라믹기판(60)을 압착, 납땜하게 되면, 납땜시 모세관 현상에 의하여 녹아있는 땜납(50)이 구리망사(40)의 좁은 틈으로 빨려 들어가게 되고, 그 땜납에 의하여 금속판(30)과 구리망사(40)가 납땜된다.When the metal plate 30 and the ceramic substrate 60 are crimped and soldered with the copper mesh 40 interposed therebetween, the molten solder 50 is sucked into the narrow gap of the copper mesh 40 by the capillary phenomenon during soldering. The metal plate 30 and the copper mesh 40 are soldered by the solder.

그래서 최종적으로 금속판(30)과 세라믹기판(60)은 구리망사(40)를 사이에 두고 납땜이 된다. 또한 납땜이 완료되고 나면 파워트랜지스터(10)와 세라믹기판(60)사이에 와이어(70)를 본딩한다.Thus, the metal plate 30 and the ceramic substrate 60 are finally soldered with the copper mesh 40 interposed therebetween. After the soldering is completed, the wire 70 is bonded between the power transistor 10 and the ceramic substrate 60.

전술한 납땜구조 및 방법에 의하여, 금속판과 세라믹기판사이의 납땜 부착력이 그 사이에 삽입된 금속망사에 의하여 납땜 부착력이 커지게 되고 그로 인하여 파워트랜지스터에서 발생한 열이 세라믹기판으로 잘 전도되어 파워트랜지스터를 효과적으로 냉각시킬 수 있다.By the above-described soldering structure and method, the solder adhesion between the metal plate and the ceramic substrate is increased by the metal mesh inserted therebetween, so that the heat generated from the power transistor is conducted to the ceramic substrate so that the power transistor can be transferred. Cooling can be effective.

또한 파워트랜지스터에서 발생하는 열에 의하여 온도가 변화할 때, 금속판과 땜납 그리고 세라믹기판의 열팽창률이 각각 달라서 발생하는 스트레스를 구리망사가 완충하는 역할을 함으로서 열팽창에 따른 기기의 파손을 방지하여 내구성을 향상시킬 수 있다.In addition, when the temperature changes due to the heat generated by the power transistor, the copper mesh buffers the stress caused by the different thermal expansion rates of the metal plate, the solder and the ceramic substrate, thereby preventing damage to the device due to thermal expansion, thereby improving durability. You can.

한편, 전술한 실시예에서는 먼저 세라믹기판에 땜납을 입히고 그 후에 구리망사를 금속판과 세라믹기판사이에 삽입하여 납땜을 했지만, 금속판과 세라믹기판 사이에 구리망사를 삽입한 후 그 틈으로 땜납을 녹여 흘려 넣어 납땜을 할 수도 있다.On the other hand, in the above-described embodiment, solder was first applied to the ceramic substrate, and then copper copper was inserted between the metal plate and the ceramic substrate, and then soldered. You can also solder it.

본 발명에 따른 금속망사를 이용한 금속재료와 세라믹기판의 납땜구조 및 방법에 의하면, 파워트랜지스터가 납땜되어 있는 금속판을 세라믹기판에 납땜할 때 납땜성이 좋은 금속망사를 금속판과 세라믹기판 사이에 삽입하여 납땜을 함으로서, 금속판과 세라믹기판사이의 공간(Void)을 제거할 수 있어 납땜의 면적이 증가하여 납땜 부착력이 커지게 되고 그로 인하여 파워트랜지스터에서 발생한 열이 금속판을 통하여 세라믹기판으로 잘 전도되어 파워트랜지스터를 효과적으로 냉각시킬 수 있으며, 파워트랜지스터에서 발생하는 열에 의하여 온도가 변화할 때, 금속판과 땜납 그리고 세라믹기판의 열팽창률이 각각 달라서 발생하는 스트레스를 금속망사가 완충하는 역할을 함으로서 열팽창에 따른 기기의 파손을 방지하여 내구성을 향상시킬 수 있다.According to the soldering structure and method of the metal material and the ceramic substrate using the metal mesh according to the present invention, when soldering the metal plate on which the power transistor is soldered to the ceramic substrate, a good solderability metal mesh is inserted between the metal plate and the ceramic substrate By soldering, it is possible to remove voids between the metal plate and the ceramic substrate, which increases the soldering area by increasing the soldering area. As a result, the heat generated from the power transistor is conducted to the ceramic substrate through the metal plate. When the temperature is changed by the heat generated from the power transistor, the metal mesh buffers the stress caused by the different thermal expansion coefficients of the metal plate, the solder and the ceramic substrate. To improve durability.

Claims (2)

발열소자가 부착되어 있는 금속판과 세라믹기판을 납땜하여 결합하는 납땜구조에 있어서,In the soldering structure for soldering and bonding the metal plate and the ceramic substrate to which the heating element is attached, 상기 납땜에 금속망사를 삽입하는 것을 특징으로 하는 금속망사를 이용한 금속재료와 세라믹기판의 납땜구조.A soldering structure of a metal material and a ceramic substrate using a metal mesh, characterized in that the metal mesh is inserted into the soldering. 발열소자가 부착되어 있는 금속판과 세라믹기판사이의 납땜방법에 있어서,In the soldering method between the metal plate and the ceramic substrate to which the heating element is attached, 상기 세라믹기판의 상부에 땜납을 입히는 땜납도포단계,Solder coating step of applying a solder on top of the ceramic substrate, 상기 땜납도포단계 후 금속재료의 납땜하고자 하는 면과 상기 세라믹기판에 땜납이 입혀져 있는 면 사이에 금속망사를 삽입하는 망사삽입단계,A mesh insertion step of inserting a metal mesh between a surface to be soldered of the metal material and a surface coated with solder on the ceramic substrate after the solder coating step; 상기 망사삽입단계 후 상호 압착 납땜하는 납땜단계를 포함하는 것을 특징으로 하는 금속망사를 이용한 금속재료와 세라믹기판의 납땜방법.Soldering method of a metal material and a ceramic substrate using a metal mesh, characterized in that it comprises a soldering step of mutual crimp soldering after the mesh insertion step.
KR1019980048803A 1998-11-13 1998-11-13 Soldering structure and method of metal material and ceramic board by using metal net KR20000032369A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9623503B2 (en) 2013-10-31 2017-04-18 Semes Co., Ltd. Support unit and substrate treating device including the same
WO2017082593A1 (en) * 2015-11-10 2017-05-18 (주)기가레인 High-frequency power amplifier
US9909197B2 (en) 2014-12-22 2018-03-06 Semes Co., Ltd. Supporting unit and substrate treating apparatus including the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9623503B2 (en) 2013-10-31 2017-04-18 Semes Co., Ltd. Support unit and substrate treating device including the same
US9909197B2 (en) 2014-12-22 2018-03-06 Semes Co., Ltd. Supporting unit and substrate treating apparatus including the same
WO2017082593A1 (en) * 2015-11-10 2017-05-18 (주)기가레인 High-frequency power amplifier

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