JP3325804B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- JP3325804B2 JP3325804B2 JP18536797A JP18536797A JP3325804B2 JP 3325804 B2 JP3325804 B2 JP 3325804B2 JP 18536797 A JP18536797 A JP 18536797A JP 18536797 A JP18536797 A JP 18536797A JP 3325804 B2 JP3325804 B2 JP 3325804B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor device
- external electrode
- internal electrode
- external
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
Landscapes
- Wire Bonding (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、球状の外部電極
を有する球状電極型半導体装置とその製造方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spherical electrode type semiconductor device having a spherical external electrode and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】図５は、従来の球状電極型半導体装置の
製造方法を示す断面図である。図５において、１ａは球
状電極型半導体装置、２は半導体素子、３は半導体素子
２を密封するための封止樹脂、４は内部電極で、Ｃｕで
構成されている。５は内部電極４の表面の錆の発生を防
ぐために形成されているＮｉ−Ａｕめっき皮膜、６は半
導体素子２と内部電極４を電気的に接続するための金属
細線、７は半導体素子２と内部電極４を電気的に絶縁す
るためのソルダーレジスト、８ａは外部電極で、共晶は
んだ材（Ｓｎ６３％、Ｐｂ３７％：融点１８３°Ｃ）で
構成されている。９は半導体素子２を取付けるテープ基
板、１０はテープ基板９に設けられた凹状に形成された
外部電極取り付け溝、１１は内部電極４と外部電極８ａ
を接合するために外部電極取り付け溝９に供給される接
合材料であり、ペースト状の共晶はんだ（Ｓｎ６３％、
Ｐｂ３７％：融点１８３°Ｃ）で構成されている。2. Description of the Related Art FIG. 5 is a sectional view showing a method of manufacturing a conventional spherical electrode type semiconductor device. In FIG. 5, 1a is a spherical electrode type semiconductor device, 2 is a semiconductor element, 3 is a sealing resin for sealing the semiconductor element 2, and 4 is an internal electrode made of Cu. 5 is a Ni—Au plating film formed to prevent rust on the surface of the internal electrode 4, 6 is a thin metal wire for electrically connecting the semiconductor element 2 and the internal electrode 4, and 7 is a thin metal wire A solder resist 8a for electrically insulating the internal electrode 4 and an external electrode 8a are made of a eutectic solder material (Sn 63%, Pb 37%: melting point 183 ° C.). 9 is a tape substrate on which the semiconductor element 2 is mounted, 10 is a concave external electrode mounting groove provided on the tape substrate 9, 11 is the internal electrode 4 and the external electrode 8a.
Is a bonding material supplied to the external electrode mounting groove 9 for bonding the eutectic solder paste (63% Sn,
Pb 37%: melting point: 183 ° C).
【０００３】図６は、従来の球状電極型半導体装置を示
す断面図である。図６において、１ｂは外部電極８ａを
内部電極４に接合した状態の球状電極型半導体装置、８
ｂは球状電極型半導体装置１ｂの外部電極である。従来
の球状電極型半導体装置１ｂの製造方法は、図５に示す
ように内部電極４に外部電極８ａを接合するために、外
部電極８ａと同じ組成を有する金属を接合材料１１とし
て用いて、球状電極型半導体装置１ａ全体に高熱を与え
ることで外部電極８ａと内部電極４を接合する。ここで
外部電極８ａと接合材料１１の融点は同じであり、融点
に至ると同時に溶融するが、外部電極８ａ周辺の雰囲気
と接合材料１１周辺のテープ基板９の温度上昇を比較す
ると、外部電極８ａ周辺の雰囲気の方が昇温し易いた
め、溶融時に高温側となる外部電極８ａに低温側の接合
材料１１が引っ張られる現象が発生する。FIG. 6 is a sectional view showing a conventional spherical electrode type semiconductor device. In FIG. 6, reference numeral 1b denotes a spherical electrode type semiconductor device in which an external electrode 8a is joined to an internal electrode 4,
b is an external electrode of the spherical electrode type semiconductor device 1b. The conventional method of manufacturing the spherical electrode type semiconductor device 1b uses a metal having the same composition as the external electrode 8a as the bonding material 11 to bond the external electrode 8a to the internal electrode 4 as shown in FIG. The external electrode 8a and the internal electrode 4 are joined by applying high heat to the entire electrode-type semiconductor device 1a. Here, the melting points of the external electrode 8a and the bonding material 11 are the same, and they are melted at the same time as the melting point is reached. When the atmosphere around the external electrode 8a and the temperature rise of the tape substrate 9 around the bonding material 11 are compared, Since the temperature of the surrounding atmosphere is more likely to rise, a phenomenon occurs in which the bonding material 11 on the low temperature side is pulled by the external electrode 8a that is on the high temperature side during melting.
【０００４】[0004]
【発明が解決しようとする課題】これにより、図６に示
すように、外部電極８ａと接合材料１１が混合した金属
からなる外部電極８ｂと内部電極４の機械的な接合強度
が弱くなり、球状電極型半導体装置１ｂの外部電極８ｂ
の一部が脱落し、それによって、球状電極型半導体装置
１ｂの電気特性不良が発生し、信頼性が大きく低下する
という問題があった。As a result, as shown in FIG. 6, the mechanical bonding strength between the external electrode 8b and the internal electrode 4 made of a metal in which the external electrode 8a and the bonding material 11 are mixed is reduced, and the spherical shape is reduced. External electrode 8b of electrode type semiconductor device 1b
Of the spherical electrode type semiconductor device 1b, thereby causing a problem that the reliability is greatly reduced.
【０００５】この発明は、このような課題を解決するた
めになされたものであり、内部電極と外部電極との十分
な接合強度が得られ、信頼性のよい半導体装置を得るこ
とを第一の目的にしている。また、そのような半導体装
置の製造方法を得ることを第二の目的としている。The present invention has been made to solve such a problem, and it is a first object of the present invention to obtain a semiconductor device having sufficient bonding strength between an internal electrode and an external electrode and having high reliability. I am aiming. A second object is to obtain a method for manufacturing such a semiconductor device.
【０００６】[0006]
【課題を解決するための手段】この発明に係わる半導体
装置においては、基板の第一の面に配置され、半導体素
子に接続された内部電極と、基板の第二の面に配置さ
れ、接合部材を用いて内部電極に接合された外部電極を
備え、接合部材は、錫をベースとして銀を３〜４％含む
材料により形成されていると共に、外部電極より融点が
高いものである。In a semiconductor device according to the present invention, an internal electrode disposed on a first surface of a substrate and connected to a semiconductor element and a bonding member disposed on a second surface of the substrate are provided. And an external electrode joined to the internal electrode using the same. The joining member contains 3 to 4% of silver based on tin.
It is made of a material and has a melting point
It is expensive .
【０００７】また、外部電極は、錫と鉛を含む材料を用
いているものである。[0007] The external electrodes are Tei shall use a material containing tin and lead.
【０００８】加えて、この発明に係わる半導体装置の製
造方法においては、基板の第一の面に、半導体素子に接
続される内部電極を形成する第一の工程と、接合部を介
し内部電極に対向して外部電極を基板の第二の面に配置
する第二の工程と、内部電極と外部電極との接合部に錫
をベースとして銀を３〜４％含む材料によって形成され
た接合部材を供給する第三の工程と、加熱によって外部
電極を溶融させた後に接合部材を溶融させて、外部電極
と内部電極を接合する第四の工程を含むものである。[0008] In addition, in the method of manufacturing a semiconductor device according to the present invention, a first step of forming an internal electrode connected to a semiconductor element on a first surface of a substrate; a second step of disposing the external electrode on the second surface of the substrate opposite to, tin junction between the internal electrode and the external electrode
Formed of a material containing 3 to 4% of silver based on
A third step of supplying the joining members, and the bonding member is melted after melting the external <br/> electrodes by heating, it is intended to include a fourth step of bonding the external electrode and the internal electrode.
【０００９】さらにまた、第二の工程及び第三の工程の
接合部は、基板に貫通孔を設けて形成されているもので
ある。また、第二の工程及び第三の工程の接合部は、内
部電極の一部を基板の第二の面に露出させて形成されて
いるものである。Further, the joints in the second step and the third step are formed by providing through holes in the substrate. The joints in the second step and the third step are formed by exposing a part of the internal electrode to the second surface of the substrate.
【００１０】[0010]
【発明の実施の形態】実施の形態１． 以下、この発明の実施の形態を図面を参照して詳細に説
明する。図１は、この発明の実施の形態１による球状電
極型半導体装置の製造方法を示す断面図である。図にお
いて、１ａ〜１０は上記従来装置と同一のものであり、
その説明を省略する。１２はＳｎ９６％、Ａｇ３〜４％
からなる融点２２１°Ｃの高融点接合材料である。図２
は、この発明の実施の形態１による球状電極型半導体装
置を示す断面図である。図２において、１ｃは外部電極
８ａを内部電極４に接合した状態の球状電極型半導体装
置、８ｃは外部電極８ａと高融点接合材料１２の合金金
属からなる外部電極である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view showing a method for manufacturing a spherical electrode type semiconductor device according to Embodiment 1 of the present invention. In the figure, 1a to 10 are the same as the above-mentioned conventional device,
The description is omitted. 12 is Sn 96%, Ag 3-4%
It is a high melting point bonding material having a melting point of 221 ° C. FIG.
1 is a sectional view showing a spherical electrode type semiconductor device according to Embodiment 1 of the present invention. In FIG. 2, reference numeral 1c denotes a spherical electrode type semiconductor device in which the external electrode 8a is joined to the internal electrode 4, and 8c denotes an external electrode made of an alloy metal of the external electrode 8a and the high melting point bonding material 12.
【００１１】この実施の形態では図１に示すとおり、球
状電極型半導体装置１ａの内部電極４と外部電極８ａを
接合するための接合材料が、高融点接合材料１２で形成
されており、テープ基板９の外部電極取り付け溝１０に
供給される。そして、球状電極型半導体装置１ａ全体に
高熱を与えることにより、図２に示すとおり、球状電極
型半導体装置１ｃの外部電極８ｃと内部電極４との機械
的な接合、電気的な接続が形成される。In this embodiment, as shown in FIG. 1, a bonding material for bonding the internal electrode 4 and the external electrode 8a of the spherical electrode type semiconductor device 1a is formed of a high melting point bonding material 12, and a tape substrate. 9 are supplied to the external electrode mounting groove 10. Then, by applying high heat to the entire spherical electrode type semiconductor device 1a, as shown in FIG. 2, mechanical bonding and electrical connection between the external electrode 8c and the internal electrode 4 of the spherical electrode type semiconductor device 1c are formed. You.
【００１２】このように、球状電極型半導体装置１ａの
内部電極４と外部電極８ａとの接合材料を高融点接合材
料１２にすることによって、接合時の外部電極８ａと高
融点接合材料１２の溶融時間にずれが生じる。まず、外
部電極８ａが溶融し、高融点接合材料１２が溶けきらな
い状態で、溶融した外部電極８ａがテープ基板９の外部
電極取り付け溝１０へ沈み込み、つぎに、高融点接合材
料１２が溶融し、十分に昇温しているテープ基板９の外
部電極取り付け溝１０に外部電極８ａと共に引き込まれ
るため、高融点接合材料１２の外部電極８ａへの引き込
みを防ぎ、かつ、外部電極８ａを高融点接合材料１２上
へ搭載する時の固着力が向上する。As described above, by using the high melting point bonding material 12 as the bonding material between the internal electrode 4 and the external electrode 8a of the spherical electrode type semiconductor device 1a, the melting of the external electrode 8a and the high melting point bonding material 12 at the time of bonding is performed. There is a time lag. First, in a state where the external electrode 8a is melted and the high melting point bonding material 12 is not completely melted, the melted external electrode 8a sinks into the external electrode mounting groove 10 of the tape substrate 9, and then the high melting point bonding material 12 is melted. Since the external electrode 8a is drawn into the external electrode mounting groove 10 of the tape substrate 9 which has been sufficiently heated, the high melting point bonding material 12 is prevented from being drawn into the external electrode 8a, and the external electrode 8a has a high melting point. The fixing force at the time of mounting on the bonding material 12 is improved.
【００１３】さらに、外部電極８ａと内部電極４を接合
するときに形成される外部電極８ａと高融点接合材料１
２の混合した合金からなる外部電極８ｃの内部電極４へ
の接合性が向上し、それにより、接合強度も向上し、外
部電極８ｃの脱落は発生しない。したがって、従来のよ
うに外部電極８ｃが球状電極型半導体装置１ｃより脱落
し、その球状電極型半導体装置１ｃの電気特性不良を招
くようなことがなくなり、球状電極型半導体装置１ｃの
信頼性が大きく向上する。Further, the external electrode 8a and the high melting point bonding material 1 formed when the external electrode 8a and the internal electrode 4 are bonded are formed.
The bonding property of the external electrode 8c made of an alloy of the two to the internal electrode 4 is improved, whereby the bonding strength is also improved and the external electrode 8c does not fall off. Therefore, unlike the conventional case, the external electrode 8c does not drop off from the spherical electrode type semiconductor device 1c and the electric characteristics of the spherical electrode type semiconductor device 1c do not deteriorate, so that the reliability of the spherical electrode type semiconductor device 1c is large. improves.
【００１４】実施の形態２． 実施の形態１では、高融点接合材料１２の金属組成がＳ
ｎ９６％、Ａｇ３〜４％（融点２２１°Ｃ）からなる球
状電極型半導体装置１ｃを示したが、金属組成がＳｎ９
５％、Ｓｂ５％（融点２４０°Ｃ）であっても実施の形
態１と同様の効果を奏する。なお、外部電極８ａより高
融点の金属であれば、これに限定されないのは勿論であ
る。Embodiment 2 FIG. In the first embodiment, the metal composition of the high melting point bonding material 12 is S
The spherical electrode type semiconductor device 1c comprising n 96% and Ag 3-4% (melting point 221 ° C.) is shown, but the metal composition is Sn9.
The same effect as in the first embodiment can be obtained even with 5% and Sb 5% (melting point 240 ° C.). Of course, as long as the metal has a higher melting point than the external electrode 8a, the present invention is not limited to this.
【００１５】実施の形態３． 図３は、この発明の実施の形態３による球状電極型半導
体装置の製造方法を示す断面図である。図において、１
ａ〜１０は図１におけるものと同一のものである。１３
は内部電極４と外部電極８ａを接合するためのＳｎ４２
％、Ｂｉ５８％からなる融点１３９°Ｃの低融点接合材
料である。Embodiment 3 FIG. 3 is a sectional view showing a method of manufacturing a spherical electrode type semiconductor device according to Embodiment 3 of the present invention. In the figure, 1
a to 10 are the same as those in FIG. 13
Is Sn42 for joining the internal electrode 4 and the external electrode 8a.
%, Bi is 58% and has a melting point of 139 ° C.
【００１６】実施の形態１では、高融点接合材料１２に
より内部電極４と外部電極８ａを接合させた球状電極型
半導体装置１ｃを示したが、図３に示すように、内部電
極４と外部電極８ａを接合するための接合材料が、低融
点接合材料１３であっても同様の効果を奏する。なお、
低融点接合材料１３は、外部電極８ａより低融点の金属
であればこれに限定されないのは勿論である。また、実
施の形態１、実施の形態２及び実施の形態３ともに外部
電極８ａに共晶はんだを用いたが、内部電極４と機械的
に接合し、電気的に接続する金属であれば、これに限定
されないのは勿論である。In the first embodiment, the spherical electrode type semiconductor device 1c in which the internal electrode 4 and the external electrode 8a are bonded by the high melting point bonding material 12 is shown. However, as shown in FIG. The same effect can be obtained even when the joining material for joining 8a is the low melting point joining material 13. In addition,
Of course, the low melting point bonding material 13 is not limited to this as long as it has a lower melting point than the external electrode 8a. In each of the first, second and third embodiments, the eutectic solder is used for the external electrode 8a. However, any metal that is mechanically joined to the internal electrode 4 and electrically connected thereto may be used. Of course, it is not limited to.
【００１７】実施の形態４． 図４は、この発明の実施の形態４による球状電極型半導
体装置の製造方法を示す断面図である。図において、１
ａ〜３、５〜９、１２は図１におけるものと同一のもの
である。４ａはテープ基板９から一部を露出させた内部
電極、４ｂは内部電極４ａの露出部、１４は内部電極４
ａの露出部４ｂが露出されたテープ基板９の外部電極取
り付け面である。Embodiment 4 FIG. 4 is a sectional view showing a method for manufacturing a spherical electrode type semiconductor device according to Embodiment 4 of the present invention. In the figure, 1
a to 3, 5 to 9 and 12 are the same as those in FIG. 4a is an internal electrode partially exposed from the tape substrate 9, 4b is an exposed portion of the internal electrode 4a, 14 is the internal electrode 4
The exposed portion 4b of a is an exposed surface of the tape substrate 9 where the external electrode is attached.
【００１８】実施の形態１では、テープ基板９に設けら
れた凹状の外部電極取り付け溝１０へ高融点接合材料１
２を供給したが、図４に示すようにテープ基板９の外部
電極取り付け面１４に露出させた内部電極４ａの露出部
４ｂに高融点接合材料１２を供給しても、実施の形態１
と同様の効果を奏する。なお、実施の形態３のように、
接合材料として低融点接合材料を供給しても同様の効果
を奏する。In the first embodiment, the high melting point bonding material 1 is inserted into the concave external electrode mounting groove 10 provided on the tape substrate 9.
Although the high melting point bonding material 12 is supplied to the exposed portion 4b of the internal electrode 4a exposed on the external electrode mounting surface 14 of the tape substrate 9 as shown in FIG.
It has the same effect as. Note that, as in Embodiment 3,
The same effect can be obtained by supplying a low melting point bonding material as the bonding material.
【００１９】[0019]
【発明の効果】この発明は、以上説明したように構成さ
れているので、以下に示すような効果を奏する。基板の
第一の面に配置され、半導体素子に接続された内部電極
と、基板の第二の面に配置され、接合部材を用いて内部
電極に接合された外部電極を備え、接合部材は、錫をベ
ースとして銀を３〜４％含む材料により形成されている
と共に、外部電極より融点が高いので、外部電極が先に
溶融して、溶融時に接合部材が外部電極に引っ張られる
現象が発生することなく、従って外部電極と内部電極と
の接合性が向上し、信頼性の高い半導体装置とすること
ができる。Since the present invention is configured as described above, it has the following effects. An internal electrode arranged on the first surface of the substrate and connected to the semiconductor element, and an external electrode arranged on the second surface of the substrate and joined to the internal electrode using a joining member , the joining member is Tin
Made of a material containing 3 to 4% of silver as a base
Together, because of the high melting point than the external electrode, the external electrode is previously
Melted and, without phenomenon bonding member is pulled to the external electrodes at the time of melting occurs, thus improving bonding strength between the external electrode and the internal electrode, it is possible to provide a highly reliable semiconductor device.
【００２０】また、外部電極は、錫と鉛を含む材料を用
いているので、外部電極の方が先に溶融して、溶融時に
接合部材を引っ張ることはない。Further, the external electrodes, Tei using a material containing tin and lead Runode, to melt toward the outer electrodes above and does not pull the joining member at the time of melting.
【００２１】加えて、この発明に係わる半導体装置の製
造方法においては、基板の第一の面に、半導体素子に接
続される内部電極を形成する第一の工程と、接合部を介
し内部電極に対向して外部電極を基板の第二の面に配置
する第二の工程と、内部電極と外部電極との接合部に錫
をベースとして銀を３〜４％含む材料によって形成され
た接合部材を供給する第三の工程と、加熱によって外部
電極を溶融させた後に接合部材を溶融させて、外部電極
と内部電極を接合する第四の工程を含むので、外部電極
が先に溶融して、溶融時に接合部材が外部電極に引っ張
られる現象が発生することなく、従って外部電極と内部
電極との接合性が向上し、信頼性の高い半導体装置を製
造することができる。In addition, in the method of manufacturing a semiconductor device according to the present invention, a first step of forming an internal electrode connected to a semiconductor element on a first surface of a substrate; a second step of disposing the external electrode on the second surface of the substrate opposite to, tin junction between the internal electrode and the external electrode
Formed of a material containing 3 to 4% of silver based on
A third step of supplying the joining members, and the bonding member is melted after melting the external <br/> electrodes by heating, because it includes a fourth step of bonding the external electrode and the internal electrodes, external electrode
Is melted first, and the phenomenon in which the bonding member is pulled by the external electrode during the melting does not occur. Therefore, the bonding property between the external electrode and the internal electrode is improved, and a highly reliable semiconductor device can be manufactured. .
【図１】 この発明の実施の形態１による球状電極型半
導体装置の製造方法を示す断面図である。FIG. 1 is a sectional view showing a method for manufacturing a spherical electrode type semiconductor device according to a first embodiment of the present invention.
【図２】 この発明の実施の形態１による球状電極型半
導体装置を示す断面図である。FIG. 2 is a sectional view showing a spherical electrode type semiconductor device according to Embodiment 1 of the present invention;
【図３】 この発明の実施の形態３による球状電極型半
導体装置の製造方法を示す断面図である。FIG. 3 is a sectional view showing a method for manufacturing a spherical electrode type semiconductor device according to a third embodiment of the present invention.
【図４】 この発明の実施の形態４による球状電極型半
導体装置の製造方法を示す断面図である。FIG. 4 is a sectional view illustrating a method of manufacturing a spherical electrode type semiconductor device according to a fourth embodiment of the present invention.
【図５】 従来の球状電極型半導体装置の製造方法を示
す断面図である。FIG. 5 is a cross-sectional view illustrating a method for manufacturing a conventional spherical electrode type semiconductor device.
【図６】 従来の球状電極型半導体装置を示す断面図で
ある。FIG. 6 is a sectional view showing a conventional spherical electrode type semiconductor device.
１ 半導体装置、２ 半導体素子、４ 内部電極、８
ａ，８ｂ，８ｃ 外部電極、９ テープ基板、１０ 外
部電極取り付け溝、１２ 高融点接合材料、１３ 低融
点接合材料、１４ 外部電極取り付け面。Reference Signs List 1 semiconductor device, 2 semiconductor element, 4 internal electrode, 8
a, 8b, 8c external electrode, 9 tape substrate, 10 external electrode mounting groove, 12 high melting point bonding material, 13 low melting point bonding material, 14 external electrode mounting surface.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/12 H01L 21/60 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 23/12 H01L 21/60
Claims (5)
に接続された内部電極、上記基板の第二の面に配置さ
れ、接合部材を用いて上記内部電極に接合された外部電
極を備え、上記接合部材は、錫をベースとして銀を３〜
４％含む材料により形成されていると共に、上記外部電
極より融点が高いことを特徴とする半導体装置。1. An internal electrode disposed on a first surface of a substrate and connected to a semiconductor element, and an external electrode disposed on a second surface of the substrate and bonded to the internal electrode using a bonding member. And the joining member comprises silver based on tin and
A semiconductor device formed of a material containing 4% and having a higher melting point than the external electrodes.
いることを特徴とする請求項１記載の半導体装置。Wherein the external electrodes, using a material containing tin and lead
There semiconductor device according to claim 1, wherein Rukoto.
れる内部電極を形成する第一の工程、接合部を介し内部
電極に対向して外部電極を基板の第二の面に配置する第
二の工程、上記内部電極と外部電極との接合部に錫をベ
ースとして銀を３〜４％含む材料によって形成された接
合部材を供給する第三の工程、加熱によって上記外部電
極を溶融させた後に上記接合部材を溶融させて、外部電
極と内部電極を接合する第四の工程を含むことを特徴と
する半導体装置の製造方法。3. A first step of forming an internal electrode connected to a semiconductor element on a first surface of the substrate, wherein an external electrode is arranged on the second surface of the substrate so as to face the internal electrode via a bonding portion. In the second step, tin is applied to the joint between the internal electrode and the external electrode.
A third step of supplying a bonding member formed of a material containing 3 to 4% of silver as a source;
A method for manufacturing a semiconductor device, comprising: a fourth step of melting the above-mentioned joining member after melting the pole and joining the external electrode and the internal electrode.
基板に貫通孔を設けて形成されていることを特徴とする
請求項３記載の半導体装置の製造方法。4. The joint of the second step and the third step,
4. The method of manufacturing a semiconductor device according to claim 3 , wherein the substrate is formed by providing a through hole.
内部電極の一部を基板の第二の面に露出させて形成され
ていることを特徴とする請求項３記載の半導体装置の製
造方法。5. The joint of the second step and the third step,
4. The method of manufacturing a semiconductor device according to claim 3 , wherein a part of the internal electrode is formed so as to be exposed on the second surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18536797A JP3325804B2 (en) | 1997-07-10 | 1997-07-10 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18536797A JP3325804B2 (en) | 1997-07-10 | 1997-07-10 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1131707A JPH1131707A (en) | 1999-02-02 |
| JP3325804B2 true JP3325804B2 (en) | 2002-09-17 |
Family
ID=16169568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18536797A Expired - Fee Related JP3325804B2 (en) | 1997-07-10 | 1997-07-10 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3325804B2 (en) |
-
1997
- 1997-07-10 JP JP18536797A patent/JP3325804B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1131707A (en) | 1999-02-02 |
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