JPH10144825A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and its manufacturing method, with which the semiconductor device can be manufactured at a high yield rate. SOLUTION: This semiconductor device is provided with a semiconductor element 6 where electrodes 6a are formed on one main surface, conductive bumps 7 which are connected to and arranged on the surface of the above- mentioned electrodes 6a, and a resin layer 8 which fills up the region where the above-mentioned conductive bumps 7 are provides and cover the tip face of the conductive bumps 7. In this manufacturing method, the conductive bumps 7 are provided on the surface of the electrodes 6a of the semiconductor element 6, the surface having the conductive bumps 7 is dipped into fludized resin 10, the resin 10 is adhered to the conductive bumps 7, and the adhered resin 10 is hardened.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device and an improvement in a method of manufacturing the same.

[0002]

2. Description of the Related Art A resin-encapsulated semiconductor device whose main part is shown in cross section in FIG. That is, a lead frame 1 having an inner lead 1a and a die pad 1b,
A semiconductor element 3 mounted on a die pad 1b of the lead frame 1 via an adhesive layer 2;
Semiconductor device having a bonding wire 4 for connecting the electrode 3a and the inner lead 1a corresponding to each other disposed on one principal surface thereof, and a mold resin layer 5 for covering and sealing the semiconductor element 3 including the bonding wire 4 It has been known.

Further, this type of resin-sealed semiconductor device is
For example, assembling and manufacturing are performed according to the procedure shown in the flowchart of FIG. First, after dicing and separating a semiconductor element 3 having a required electrode 3a on one principal surface from a wafer, the semiconductor element 3 is mounted on a die pad 1b of a predetermined lead frame 1 prepared in advance via an adhesive layer 2. .

Next, the electrode group of the mounted semiconductor element 3 is electrically connected to the corresponding inner lead 1b of the lead frame 1 by wire bonding. afterwards,
It is mounted on a molding die, set in a transfer molding machine, and resin-molded in the mounted semiconductor element 3 region, including the bonding wire 4 and a part of the inner lead 1b. With respect to this resin molded product, the encapsulation type semiconductor device is obtained by removing burrs generated in the mold resin layer 5, applying exterior plating to the lead frame 1, and then marking.

[0005]

However, the semiconductor device having the above structure has advantages that it can be easily protected from the external environment and that it is made thin, and that it is easy to handle. Are not sufficient, and the manufacturing process is complicated. First, in terms of structure, since it is mounted on the lead frame 1 and the inner leads 1a extend in the outer peripheral direction,
The planar spread becomes large, and compactness is hindered.

Next, in the manufacturing / assembly process, the number of processes is large and complicated, and not only is the productivity low, but also a dedicated device for each process and a dedicated mold for each product are required. However, there is a problem that the manufacturing cost is significantly increased. In particular, since the number of steps and the complexity of the steps are factors that impair the reliability or yield of the product, it is serious in terms of manufacturing.

The present invention has been made in view of the above circumstances, and has as its object to provide a thin, compact, highly reliable semiconductor device and a manufacturing method capable of manufacturing such a semiconductor device with high yield.

[0008]

According to a first aspect of the present invention, there is provided a semiconductor device having an electrode on one principal surface, a conductive bump connected to each of the electrode surfaces, and the conductive bump. And a resin layer that fills the exposed region and covers the front end surface of the conductive bump.

According to a second aspect of the present invention, there is provided a step of providing a conductive bump on an electrode surface of a semiconductor element, immersing the surface provided with the conductive bump in a fluid resin, and filling the conductive bump region with the resin. A method of manufacturing a semiconductor device, comprising a step of adhering and a step of curing the filled and adhered resin.

According to a third aspect of the present invention, there is provided a step of providing a conductive bump on an electrode surface of a semiconductor element, immersing the surface provided with the conductive bump in a fluid resin, and filling the conductive bump region with the resin. And a step of, after curing the filled and adhered resin, flattening the front end side of the conductive bump to expose the front end of the conductive bump. 6 shows a method for manufacturing a semiconductor device.

According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor device according to the second or third aspect, when the semiconductor element is immersed in the fluid resin, the back surface of the semiconductor element is held by a suction pad. It is characterized by.

According to the first aspect of the present invention, in the configuration of the semiconductor device, a conductive bump is provided on an electrode surface of the semiconductor element.
The configuration in which the resin is filled and covered so as to embed the conductive bumps is the main point. The filling and coating of the sealing resin protects the tip of the conductive bump derived from the electrode surface of the semiconductor element from the external environment, and easily secures insulation and isolation between the conductive bumps. On the other hand, it is easy to handle, and thin and compact.

According to the second aspect of the present invention, it is essential that a region provided with conductive bumps is filled and adhered with a resin by a dipping method, and is molded and cured by curing. By adopting such a means, a thin and compact mold-sealed semiconductor device that can prevent rust of the conductive bumps and is storable and easy to handle is provided in mass production and with high yield.

According to the third aspect of the invention, the outline is to flatten the conductive bump side after filling and adhering the area where the conductive bump is provided with resin by the dipping method, and molding and curing the area by curing. . By employing such means, a thin and compact mold-sealed semiconductor device that can be mounted with high reliability is provided with high yield.

According to a fourth aspect of the present invention, the method of manufacturing a semiconductor device according to the second or third aspect is more easily achieved.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a semiconductor device
This is an IC element with many electrodes (connection terminals) led out on the periphery or the entire surface of one main surface, and its shape and size are not limited. Further, the conductive bumps provided on the electrode surface are formed using, for example, InBi solder, InSn solder, InBiSn solder or Au as a material, and the shape thereof may be a columnar shape, a drum shape, a spherical shape, or an elliptical shape. .

In the present invention, the fluid resin that fills and adheres to the region of the semiconductor element where the conductive bumps are provided is a thermosetting resin that exhibits fluidity at room temperature or in a heated state, such as an epoxy resin. Examples include polyimide resins. When immersed in a fluid resin to fill / adhere or fill / cover the conductive bump region, if the conductive bump is provided only on the peripheral portion of the semiconductor element main surface, the center portion is When a conductive bump is provided on the entire surface of the semiconductor element main surface, the semiconductor element has a flat shape. However, in each case, the area where the conductive bumps are provided is filled and covered with a resin layer having a substantially uniform height, and each conductive bump is isolated from the external atmosphere while insulating the conductive bumps from each other. And so on.

Next, an embodiment will be described with reference to FIGS. 1 and 2 (a) and (b), FIG. 3 and FIG. FIG. 1 is a cross-sectional view illustrating a configuration of a main part of a semiconductor device. In FIG.
Reference numeral 6 denotes a semiconductor element having an electrode 6a provided on one main surface, 7 denotes a conductive bump connected to and disposed on each electrode 6a surface of the semiconductor element 6, and 8 denotes a region filling the area where the conductive bump 7 is provided. And a resin layer that covers the front end surface of the conductive bump 8. Here, the semiconductor element 6 is an IC chip, a conductive bump 7
Is a drum shape made of InSn solder, and the resin layer 8 is formed of epoxy resin.

In the structure of this semiconductor device, the semiconductor element 6
The electrode 6a and the conductive bump 7 are isolated from each other by the resin layer 8, and the tip of the conductive bump 7 is covered with the resin layer 8, so that the conductive bump 7 is prevented from being oxidized. Prior to use, the surface of the resin layer 8 that fills and covers the conductive bumps 7 is wrapped, and the clean surface of the conductive bumps 7 is exposed and joined to form a highly reliable connection / connection. Implementation can be performed.

FIGS. 2A and 2B schematically show an embodiment of a method of manufacturing a semiconductor device, and FIG. 3 is a flow chart showing an execution procedure. First, as shown in a plan view in FIG. 2A, a required semiconductor element (for example, an IC chip) 6
A conductive bump 7 is provided on the surface of the electrode 6a. Then, FIG.
As shown in cross section in FIG. 2B, the semiconductor element 6 is held by the suction pad 9 on the back surface side, and the surface provided with the conductive bumps 7 is immersed in a fluid resin (for example, epoxy resin) 10. . In FIG. 2 (b), reference numeral 11 denotes a container for housing a fluid resin for immersion.

After the resin is filled and adhered to the area where the conductive bumps 7 are provided by this selective immersion treatment, the resin is pulled up from the fluid resin 10 and the filled and adhered resin is dried and dried.
By heating and curing, a semiconductor device having a configuration as shown in FIG. 1 is manufactured, and thereafter, the semiconductor device is marked, packed, and shipped. Then, at the time of use by a user, that is, at the stage of mounting on a wiring board or the like, the resin layer 8 on the tip side of the conductive bump 7 is removed by lapping to expose the tip of the conductive bump 7.

That is, generally, the conductive bump 7 is entirely covered with the resin layer 8 until the stage of use, so that formation or formation of an oxide layer is prevented. Therefore, reliable soldering can be reliably formed without complicated processing such as removal of an oxide film.

FIGS. 4A and 4B schematically show another embodiment of a method for manufacturing a semiconductor device. In this example, the electrode 6a is arranged on the peripheral portion of one main surface, and the IC chip 6 in which the conductive bumps 7 are provided on the surface of the electrode 6a is targeted. In the case of this embodiment, as shown in a plan view in FIG. 4A, the region where the conductive bumps 7 are provided is only the peripheral portion. 4
FIG. 4B shows a cross section taken along the line AA in FIG.
The central area where the conductive bumps 7 are not present is concave, and this area is covered with a thin resin layer 8. Since the manufacturing procedure in this case conforms to the flowchart shown in FIG. 3, the description will be omitted.

The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention. For example, the holding of the semiconductor element when the area provided with the conductive bumps is immersed in the fluid resin can be performed by means other than the suction pad.

[0025]

According to the first aspect of the present invention, the filling and covering of the sealing resin protects the tip of the conductive bump from the external environment, and secures the insulation and isolation between the conductive bumps. . In other words, when mounting on a wiring board, etc., the required conductive connection can be easily made by exposing the clean conductive bump surface by lapping, so that not only easy handling but also highly reliable electrical connection is possible. This greatly contributes to the yield of the mounted circuit device.

According to the second to fourth aspects of the present invention, when mounting on a wiring board or the like, a reliable conductive bump surface is exposed by lapping, and required electrical connection can be easily performed. It is possible to provide a semiconductor device capable of performing a simple connection with a high yield.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a main configuration of a semiconductor device according to an embodiment.

FIGS. 2A and 2B schematically show a manufacturing process of a semiconductor device according to an embodiment. FIG. 2A is a plan view of a semiconductor element provided with conductive bumps, and FIG. Sectional drawing which shows the state which immersed the attached semiconductor element.

FIG. 3 is a flowchart showing a manufacturing process procedure of the semiconductor device of the embodiment.

FIGS. 4A and 4B schematically show a manufacturing process of a semiconductor device according to another embodiment. FIG. 4A is a plan view of a semiconductor element provided with conductive bumps, and FIG. Sectional drawing which shows the state which filled and covered the bump area | region.

FIG. 5 is a cross-sectional view illustrating a configuration example of a conventional semiconductor device.

FIG. 6 is a flowchart showing a conventional semiconductor device manufacturing process procedure.

[Explanation of symbols]

 6 Semiconductor element 6a Electrode 7 Conductive bump 8 Filling / coating resin layer 9 Adsorption pad 10 Fluid resin 11 Container for resin

Claims (4)

[Claims] A semiconductor element having an electrode provided on one principal surface thereof; a conductive bump connected to each of the electrode surfaces; and a conductive bump tip for filling a region provided with the conductive bump. And a resin layer covering the surface. 2. A step of providing a conductive bump on an electrode surface of a semiconductor element, immersing the surface provided with the conductive bump in a fluid resin,
A method for manufacturing a semiconductor device, comprising: a step of filling and attaching a resin to a conductive bump region; and a step of curing the filled and attached resin. A step of providing a conductive bump on an electrode surface of the semiconductor element; and immersing the surface provided with the conductive bump in a fluid resin.
A step of filling and adhering the resin to the conductive bump region, and after curing the filled and adhered resin, flattening the front end side of the conductive bump to expose the front end of the conductive bump And a method of manufacturing a semiconductor device. 4. The method according to claim 2, wherein when the semiconductor element is immersed in the fluid resin, the back surface of the semiconductor element is held by a suction pad.