JPH10125725A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent deterioration of insulating property of a conductive adhesive narrowly provided between fine electrodes of a semiconductor element caused by conductive particles of the adhesive, and which can connect the semiconductor element to a wiring substrate with a good productivity. SOLUTION: The semiconductor device includes a semiconductor element 1 having electrodes 2 and projected electrodes 3 each having a sectional area smaller than each of the electrodes 2, a wiring substrate 4 having electrodes 5 provided at positions opposed to the projected electrodes 3, and a plurality of adhesive layers provided between the element 1 and substrate 4. The plurality of adhesive layers include an adhesive-alone layer 14 not containing conductive particles 6 and arranged on the side of the element 1, and an anisotropy conductive adhesive layer 7 provided on the side of the substrate 4 for conducting the electrodes 3 and the electrodes 5 on the substrate and opposed thereto.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device obtained by connecting a semiconductor element and electrodes of a wiring board with an anisotropic conductive adhesive and a method of manufacturing the same.

[0002]

2. Description of the Related Art In order to further reduce the size of electronic equipment, there has been a change from a method of soldering a packaged semiconductor element to a wiring board to a method of mounting a semiconductor element on a wiring board without packaging without packaging. As a method of mounting a semiconductor element on a wiring board while bare, there is a method of bonding the back surface of the semiconductor element to the wiring board with a conductive adhesive, and connecting the electrode of the semiconductor element and the electrode of the wiring board with a wire.
In this method, since the semiconductor element and the electrodes of the wiring board are connected one by one by wires, it takes time to connect a large number of electrodes. Further, since the electrodes of the wiring board to be connected are arranged around the semiconductor element, the mounting area needs to be larger than the area of the semiconductor element. Therefore, as a method of mounting the semiconductor device with almost the same area as the semiconductor device, a flip chip connection method of turning the semiconductor device upside down and directly connecting to the wiring board electrode has been developed.

[0003] As the method, (1) a connection method using a conductive adhesive (for example, surface mounting technology, published by Nikkan Kogyo Shimbun, September issue, 1994, p. 48) and (2) a method using solder. How to connect (for example, Industrial Research Council, 19
Published June 1, 1986, Surface Mount Technology, p. 172). This will be described below with reference to the drawings. FIG. 7 is a cross-sectional view showing the configuration of a conventional semiconductor device connected using a conductive adhesive. In the figure, 1 is a bare semiconductor element not packaged, 2 is an electrode formed on the semiconductor element 1, 3 is a protruding electrode formed on the electrode 2 on the semiconductor element, 4 is a wiring board,
Reference numeral 5 denotes an electrode formed on the wiring board 4, reference numeral 21 denotes a conductive adhesive, and reference numeral 22 denotes a sealant.

A method of manufacturing a conventional semiconductor device having such a structure will be described. First, using plating,
The protruding electrode 3 is formed on the electrode 2 of the semiconductor element 1. Next, the protruding electrode 3 is pressed against a conductive adhesive layer (not shown) formed on the flat plate to have a uniform thickness, and the conductive adhesive 21 is transferred to the protruding electrode 3. Next, after the semiconductor element 1 and the wiring board 4 are opposed to each other and the protruding electrodes 3 of the semiconductor element 1 and the electrodes 5 on the wiring board 4 are aligned, the semiconductor element 1 is pressed against the wiring board 4 and Wiring board 4
The upper electrode 5 is brought into contact via the conductive adhesive 21.
Next, after heating the conductive adhesive 21 at a temperature of about 150 ° C. for several hours to cure the conductive adhesive 21, a sealant 22 for preventing invasion of moisture or the like from the outside is provided between the semiconductor element 1 and the wiring board 4. The semiconductor device shown in FIG. 7 can be obtained by injecting and heating and curing.

FIG. 8 is a cross-sectional view showing a configuration of a conventional semiconductor device when connection is made using solder. In the figure, 1 is a semiconductor element, 2 is an electrode formed on the semiconductor element 1, 3 is a protruding electrode formed on the electrode 2 on the semiconductor element, 4 is a wiring board, 5 is a wiring board 4 , 22 denotes a sealant, and 23 denotes solder. A conventional method for manufacturing a semiconductor device having such a structure will be described. First, a film of Cr and Cu is formed on the electrode 2 formed on the semiconductor element 1 by vapor deposition or the like, and then the resist is patterned and plated or vapor-deposited by Pb-S
An n-solder electrode 3 is formed. Next, the semiconductor element 1 is aligned with the electrode 5 on the wiring board 4 to which the eutectic solder 23 is supplied in advance, and the solder 23 is heated.
Is melted, the protruding electrode 3 and the electrode 5 are joined, the sealing agent 22 is injected between the semiconductor element 1 and the wiring substrate 4, and is cured by heating to obtain the semiconductor device shown in FIG. it can.

FIG. 9 is a cross-sectional view showing the structure of a conventional semiconductor device for connecting a semiconductor element and a wiring board with an anisotropic conductive adhesive described in, for example, Japanese Patent Publication No. 62-6652. In the figure, 1 is a semiconductor element, 2 is an electrode formed on the semiconductor element 1, 3 is a protruding electrode formed on the electrode 2 on the semiconductor element, 4 is a wiring board, 7 is an anisotropic conductive adhesive. The agent layer 9 indicates conductive leads on the wiring board 4. The anisotropic conductive adhesive is obtained by dispersing metal particles in an adhesive, particles of metal plated on the surface of a plastic ball, and the like. Is obtained.

When a layer 7 of an anisotropic conductive adhesive is formed on a conductive lead wire 9 on a wiring board 4 and the semiconductor element 1 having the protruding electrode 3 is pressed, an anisotropic portion below the protruding electrode 3 is formed. The conductive conductive adhesive layer 7 conducts in the direction in which the pressure is applied.
As a result, the protruding electrode 3 and the conductive lead 9 conduct. At the same time, the semiconductor element 1 is fixed to the wiring board 4 by the adhesive action of the layer 7 of the anisotropic conductive adhesive, so that the invasion of moisture and dust from the outside can be prevented. Further, since the lower surface of the semiconductor element 1 is entirely bonded to the wiring board 4 by the anisotropic conductive adhesive layer 7, the bonding area is increased and the bonding strength is increased.

[0008]

The conventional semiconductor devices shown in FIGS. 7 and 8 have the following problems. (1) When a semiconductor element is pressed against a wiring board electrode for connection, a conductive adhesive or a solder adhesive spreads laterally and comes into contact with an adjacent electrode, causing a short circuit and reducing the distance between fine electrodes. Unable to connect semiconductor device. (2) After connecting the protruding electrode of the semiconductor element and the electrode of the wiring board with a conductive adhesive or solder, and then injecting a sealing agent between the semiconductor element and the wiring board to improve reliability,
Many processes lack productivity.

Although the prior art shown in FIG. 9 solves these problems for the time being, conductive particles of a conductive adhesive are present between the protruding electrodes A, and the fine particles in which the distance A between the electrodes is reduced. In a semiconductor element having electrodes, the conductive particles between the protruding electrodes rub against each other, thereby deteriorating the insulation resistance between the protruding electrodes or forming conductive channels between the electrodes on the surface of the semiconductor element by the conductive particles. There was a problem that the insulation between them deteriorated.

According to the present invention, even in a semiconductor element having fine electrodes with a narrow electrode interval, deterioration of insulating properties due to conductive particles of a conductive adhesive interposed between the electrodes can be prevented, and furthermore, the present invention can be used with a wiring board. It is an object of the present invention to provide a semiconductor device which realizes connection with high productivity and a method of manufacturing the same.

[0011]

A semiconductor device according to the present invention comprises a semiconductor element having a protruding electrode having a smaller cross-sectional area than an electrode on an electrode, and a wiring having an electrode disposed at a position facing the protruding electrode. The semiconductor device includes a substrate, and a layer of an anisotropic conductive adhesive formed between the semiconductor element and the wiring substrate and electrically connecting the protruding electrode and an electrode on the wiring substrate opposed to the protruding electrode.

A semiconductor device according to the present invention includes a semiconductor element having a protruding electrode having a smaller sectional area than an electrode, a wiring board having an electrode disposed at a position facing the protruding electrode, and a semiconductor device. A semiconductor device comprising a plurality of layers of adhesive formed between an element and a wiring board, wherein the plurality of layers of adhesive are bonded on a side of the semiconductor element and containing no conductive particles. It is composed of a layer of an agent, a protruding electrode on the side of the wiring board, and a layer of an anisotropic conductive adhesive for conducting between the protruding electrode and the electrode on the wiring board facing the protruding electrode.

Further, the wiring substrate of the semiconductor device according to the present invention is characterized in that it is a glass substrate.
Further, the wiring board of the semiconductor device according to the present invention is characterized in that a printed board and a wiring layer formed of a resin material are laminated. Further, the wiring board of the semiconductor device according to the present invention is characterized in that it is a wiring layer made of a flexible resin material.

Further, in the method of manufacturing a semiconductor device according to the present invention, a step of forming a protruding electrode having a smaller cross-sectional area than the electrode on a semiconductor element electrode by a ball bonder; The method includes a step of bonding the upper electrode and the wiring on the surface on which the wiring is formed, and a step of pressing the protruding electrode against the electrode of the wiring substrate via an anisotropic conductive adhesive.

Further, the method of manufacturing a semiconductor device according to the present invention includes a step of forming a layer of an adhesive containing no conductive particles on a surface of a semiconductor element having a projecting electrode having a smaller sectional area than the electrode on the electrode; Forming a layer of an anisotropic conductive adhesive on the surface of the wiring substrate on which the electrodes and wiring are formed; and forming a semiconductor element having an adhesive layer containing no conductive particles and an anisotropic conductive adhesive. Pressing and bonding to the wiring board on which the layer is formed.

[0016]

An embodiment of the present invention will be described below with reference to the drawings. In the drawings, the same reference numerals as those in the related art denote the same or corresponding parts in the related art. Embodiment 1 FIG. FIG. 1 is a sectional view showing a configuration of the semiconductor device according to the first embodiment of the present invention. In the figure, 1 is a semiconductor element, 2 is an electrode formed on the semiconductor element 1, 3
Is a projecting electrode, 4 is a wiring board made of, for example, a glass substrate,
5 is an electrode formed on the wiring board 4, 6 is conductive particles,
Reference numeral 7 denotes a layer of an anisotropic conductive adhesive containing conductive particles 6.

In the present embodiment, since the cross-sectional area of each protruding electrode 3 is formed to be smaller than the cross-sectional area of the electrode 2 formed on the semiconductor element 1, the distance between each of the electrodes 2 is increased. Even when B is short, the interval A between the protruding electrodes 3 used for connection with the electrodes 5 on the wiring board 4 can be made large. Therefore, the conductive particles 6 in the anisotropic conductive adhesive layer 7 are prevented from coming into contact with each other or rubbing each other between the protruding electrodes 3, and good insulation between the protruding electrodes 3 is ensured. Can be.

The protruding electrode 3 on the electrode 2 of the semiconductor element 1
May be a metal such as gold, copper, nickel, and solder. The formation method can be performed using a photoengraving technique and a metal film forming technique such as plating or vapor deposition. The conductive particles 6 are formed by forming a metal film such as gold on plastic particles such as epoxy having a diameter of about 5 μm. Alternatively, nickel or gold metal particles may be used. In the layer 7 of the anisotropic conductive adhesive, a thermosetting epoxy resin is used as a main component of the adhesive, but a thermoplastic adhesive may be used.

In the present embodiment, for example,
A semiconductor element 1 in which a bump electrode 3 having a size of 50 μm is formed on an electrode 2 of a semiconductor element having a size and an interval of 60 μm square and 10 μm, respectively, is formed of an ITO (indium tin oxide) material. 5 was connected to the wiring substrate 4 composed of a glass substrate having good conductivity. Therefore, according to the first embodiment,
In the connection of the semiconductor element having a fine electrode spacing to the wiring board, good insulation can be ensured and good conduction can be achieved. Further, fine wiring can be performed on a glass substrate, and the mounting density of a semiconductor element can be improved by using a glass substrate as the wiring substrate.

Embodiment 2 FIG. 2 is a sectional view showing a configuration of a semiconductor device according to a second embodiment of the present invention. It is sectional drawing. In the figure, 1 is a semiconductor element, 2 is an electrode formed on the semiconductor element 1, 3 is a protruding electrode, 40 is a wiring board, 5 is an electrode formed on the wiring board 40, 6 is conductive particles, 7 is This is a layer of an anisotropic conductive adhesive containing conductive particles 6. Reference numeral 8 denotes a wiring layer, 10 denotes a recess, 11 denotes an insulating layer of a resin material, 12 denotes a conductor layer made of metal on the wiring layer 8,
Denotes a printed board, and 16 denotes a wiring pattern on the printed board 15.

Also in the present embodiment, since the cross-sectional area of each protruding electrode 3 is formed to be smaller than the cross-sectional area of the electrode 2 formed on the semiconductor element 1, the distance between the electrodes 2 is reduced. Is shorter, the distance between the protruding electrodes 3 used for connection with the electrodes 5 on the wiring board 40 can be increased. Therefore, an anisotropic conductive adhesive layer 7
It is reduced that the conductive particles 6 inside contact each other or rub against each other, so that good insulation between the protruding electrodes 3 can be secured. Further, as shown in the figure, in the present embodiment, the wiring board 40 is composed of the printed board 15 and the wiring layer 8 formed of the insulating layer 11 and the conductor layer 12 formed thereon, Lighter than those used. The wiring pitch T of the printed circuit board 15 is limited to about 200 μm in the state of the art, but by using such a wiring board 40, fine wiring with a wiring pitch T ′ on the wiring layer 8 of 100 μm can be realized. .

For the wiring board 40, a resin such as epoxy is applied to the surface of the printed board 15, a via hole is formed by photolithography, the insulating layer 11 is formed, and a metal film is formed by plating or vapor deposition. Then, the conductor layer 12 can be formed on the insulating layer 11 by patterning the metal film using a photoengraving technique. This insulating layer 1
By repeating the formation of the wiring layer 8 and the conductor layer 12, the wiring layer 8 can be multi-layered. Such a wiring board 40 has large irregularities on the surface, and the height of the electrode 5 varies.

If the surface of the wiring board 40 has irregularities, the distance between the protruding electrode 3 and the electrode 5 of the wiring board 40 will be different, so that a good connection cannot be obtained at all connection points. There is. However, this problem can be solved by pressing the electrode 5 of the wiring board 40 until the concave portion 10 is formed when the protruding electrode 3 is pressed against the electrode 5 of the wiring board 40. Forty-five electrodes 5 can be reliably connected via conductive particles 6. Actually, when the semiconductor element 1 having a fine electrode spacing was connected, the same result as in the first embodiment could be obtained. As described above, according to the present embodiment, it is possible to realize a semiconductor device that secures good insulation between the protruding electrodes and improves the mounting density and reduces the weight.

Embodiment 3 FIG. FIG. 3 is a sectional view showing a configuration of a semiconductor device according to a third embodiment of the present invention. In the figure, 1 is a semiconductor element, 2 is an electrode formed on the semiconductor element 1, 3 is a protruding electrode, 8 is a wiring layer, 5 is an electrode formed on the wiring layer 8, 6 is conductive particles, 7 is Conductive particles 6
This is a layer of an anisotropic conductive adhesive containing: Reference numeral 10 denotes a recess, 11 denotes an insulating layer of a resin material, and 12 denotes a conductor layer made of a metal on the wiring layer 8. As shown in the figure, in the present embodiment, the wiring layer 8 as shown in the second embodiment is used as the wiring substrate itself instead of the wiring substrate 4 made of the glass substrate used in the first embodiment. It is. The method for forming the wiring layer 8 is the same as that in the second embodiment.
Although the epoxy resin is used as the resin for the insulating layer 11 in the second embodiment, a more flexible polyimide may be used.

Also in the present embodiment, the cross-sectional area of each protruding electrode 3 is formed so as to be smaller than the cross-sectional area of the electrode 2 formed on the semiconductor element 1. Is small, the distance between the protruding electrodes 3 used for connection with the electrodes 5 on the wiring layer 8 can be increased. Therefore, the conductive particles 6 in the anisotropic conductive adhesive layer 7 are prevented from coming into contact with each other or rubbing each other between the protruding electrodes 3, and good insulation between the protruding electrodes 3 is ensured. Can be.

If the surface of the wiring layer 8 as a wiring substrate has irregularities, the distance between the protruding electrode 3 and the electrode 5 on the wiring layer 8 will be different, so that a good connection can be obtained at all connection points. There is a problem that it cannot be obtained. However, this problem can be solved by pressing the protruding electrode 3 against the electrode 5 of the wiring layer 8 until the electrode 5 of the wiring layer 8 has the concave portion 10 as in the case of the second embodiment. As a result, all the protruding electrodes 3 and the electrodes 5 on the wiring layer 8 can be reliably connected via the conductive particles 6.
Further, in the present embodiment, since the wiring board is constituted only by the wiring layer 8 using a flexible resin material, the wiring layer 8 is formed by a thermal expansion coefficient difference between the semiconductor element 1 and the wiring layer 8. Since the stress can be sufficiently absorbed, the reliability of the connection between the protruding electrode 3 and the electrode 5 on the wiring layer 8 over a long period can be improved.

Embodiment 4 FIG. 4 is a diagram showing a manufacturing method according to the fourth embodiment of the present invention. In the figure, 1 is a semiconductor element, 2 is an electrode formed on the semiconductor element 1, 3
Denotes a projecting electrode, 4 denotes a wiring board, 5 denotes an electrode formed on the wiring board 4, 6 denotes conductive particles, and 7 denotes a layer of an anisotropic conductive adhesive containing the conductive particles 6. FIG. 1A shows a semiconductor device 1.
2 shows a state in which a projection 13 is formed on the electrode 2 by a ball bonder. FIG. 2B shows a state in which the projection 13 is pressed with a flat plate to make the height of the projection 13 uniform, the tip of the projection 13 is flattened, and the projection electrode 3 is formed. Figure (c)
Shows a state in which the layer 7 of the anisotropic conductive adhesive is formed on the wiring board 4. Further, FIG. 4D shows that the semiconductor element 1 having the protruding electrode 3 is pressed against the wiring board 4 and is heated, so that the
And a state where the electrode 5 of the wiring board 4 is conducted. As described above, according to the method for manufacturing a semiconductor device according to the present embodiment,
By forming the protruding electrodes 3 using a ball bonder, there is an effect that the protruding electrodes 3 can be easily formed without going through complicated steps such as photoengraving and plating.

Embodiment 5 In Embodiment 1 described above, since the electrode 2 of the semiconductor element 1 has a larger cross-sectional area than the protruding electrode 3, it is assumed that the conductive particles 6 exist in the exposed portion of the electrode 2 of the semiconductor element 1. In some cases, a conductive channel may be formed between the adjacent electrodes 2 via the conductive particles 6 and insulation reliability may be degraded. However, the present embodiment also solves such a problem. FIG. 5 is a sectional view showing a configuration of a semiconductor device according to a fifth embodiment of the present invention. In the figure, 1 is a semiconductor element, 2 is a semiconductor element 1
The electrodes formed on the top, 3 are protruding electrodes, 4 is a wiring board, 5
Is an electrode formed on the wiring board 4, 6 is conductive particles, 7
Is a layer of an anisotropic conductive adhesive containing conductive particles 6, and 14 is a layer of only an adhesive using the same adhesive as the layer 7 of anisotropic conductive adhesive but not containing the conductive particles 6. is there.

As described above, in the present embodiment, the layer 7 of the anisotropic conductive adhesive containing the conductive particles 6 and the layer 7 of the anisotropic conductive adhesive are provided between the semiconductor element 1 and the wiring board 4. The same adhesive is used to form two adhesive layers, that is, an adhesive-only layer 14 that does not include the conductive particles 6. In consideration of the production efficiency at the time of manufacturing, the adhesive between the semiconductor element 1 and the wiring board 4 needs to be cured at the same time.
The adhesive of the layer 14 of the adhesive without the layer and the adhesive of the layer 7 with the conductive particles 6 must be made of the same material.

Also in the present embodiment, since the cross-sectional area of each protruding electrode 3 is formed to be smaller than the cross-sectional area of the electrode 2 formed on the semiconductor element 1, the distance between the electrodes 2 is small. Even when the distance B is short, the distance A between the protruding electrodes 3 used for connection with the electrodes 5 on the wiring board 4 can be large. Therefore, in the layer 7 of the anisotropic conductive adhesive, the conductive particles 6 are prevented from coming into contact with each other or rubbing each other between the projecting electrodes 3, and good insulation between the projecting electrodes 3 is secured. can do. Further, as shown in FIG. 5, conductive particles 6 are provided on the surface of semiconductor element 1 on the side of wiring substrate 4.
By forming the layer 14 of only the adhesive not containing
Since a conductive channel is reliably prevented from being formed between the adjacent electrodes 2 via the conductive particles 6, the semiconductor element 1
The deterioration of insulation reliability between the electrodes 2 formed on the surface on the side of the wiring board 4 can be prevented.

Embodiment 6 FIG. FIG. 6 is a sectional view showing the manufacturing method according to the sixth embodiment of the present invention. In the figure,
1 is a semiconductor element, 2 is an electrode formed on the semiconductor element 1, 3 is a protruding electrode, 4 is a wiring board, 5 is an electrode formed on the wiring board 4, 6 is conductive particles, and 7 is conductive particles. The layer 14 of an anisotropic conductive adhesive containing 6 uses the same adhesive as the layer 7 of anisotropic conductive adhesive, but is a layer of only the adhesive not containing the conductive particles 6. FIG. 6A shows the projection electrode 3.
1 shows a state in which a layer 14 made of only an adhesive without conductive particles 6 is formed on the surface of the semiconductor element 1 on which is formed. FIG. 6 (b)
Shows a state in which a layer 7 of an anisotropic conductive adhesive is formed on the wiring board 4. FIG. 6C shows the layer 7 of the anisotropic conductive adhesive.
The semiconductor element 1 on which the layer 14 of only the adhesive without the conductive particles 6 is formed is pressed against the wiring board 4 on which the conductive particles 6 are formed, and heated. This shows a state in which the layer 14 made of only the adhesive without the conductive particles 6 and the layer 7 made of the anisotropic conductive adhesive are cured by heating while conducting.

As described above, by forming the layer 14 of only the adhesive without the conductive particles 6 on the surface of the semiconductor element 1 in advance, the layer 7 of the anisotropic conductive adhesive with the conductive particles 6 is formed. It becomes possible to completely separate the layer 14 containing only the adhesive without the conductive particles 6, and when the semiconductor element 1 is pressed against the wiring board 4 and heated to cure the adhesive, the adhesive softens and flows. In addition, the presence of the conductive particles 6 between the electrodes 2 on the semiconductor element 1 can be completely prevented.
Therefore, according to the method of manufacturing a semiconductor device according to the present embodiment, a conductive channel is prevented from being formed between the adjacent electrodes 2 on the semiconductor element 1 via the conductive particles 6, and the wiring substrate of the semiconductor element 1 is formed. It is possible to realize a semiconductor device capable of preventing insulation reliability from being deteriorated between the electrodes 2 formed on the surface on the fourth side.

[0033]

According to the present invention, there is provided a semiconductor device having a protruding electrode having a smaller cross-sectional area on an electrode, a wiring board having an electrode disposed at a position facing the protruding electrode, and a semiconductor device comprising: Since the semiconductor device has a fine electrode spacing, the semiconductor device includes a protruding electrode and a layer of an anisotropic conductive adhesive that conducts between the protruding electrode and an electrode on the wiring substrate facing the protruding electrode. In connection to a wiring board, there is an effect that a distance between the protruding electrodes can be increased, a good insulating property can be ensured, and a semiconductor device capable of achieving good conduction can be provided.

According to the present invention, a semiconductor element having a protruding electrode having a smaller cross-sectional area on an electrode, a wiring board having an electrode disposed at a position facing the protruding electrode, and a semiconductor element are provided. A plurality of adhesive layers formed between the wiring board and the wiring board, wherein the plurality of adhesive layers are formed of an adhesive that does not contain conductive particles on the side of the semiconductor element. Good insulation between the protruding electrodes is ensured by forming the protruding electrodes on the side of the layer and the wiring board and a layer of an anisotropic conductive adhesive that conducts between the protruding electrodes and the electrodes on the wiring board facing the protruding electrodes. In addition, since a conductive channel can be reliably prevented from being formed between adjacent electrodes of the semiconductor element via conductive particles, an effect of realizing a semiconductor device having very good insulating properties can be achieved. is there.

Further, according to the present invention, a glass substrate capable of fine wiring is used as the wiring substrate, thereby realizing a semiconductor device capable of ensuring good insulating properties and improving the mounting density. There is an effect that can be. Further, according to the present invention, since the printed circuit board is formed by laminating a printed circuit board and a wiring layer formed of a resin material, a semiconductor that ensures good insulating properties, and has an improved mounting density and reduced weight. There is an effect that the device can be realized. Further, according to the present invention, since the wiring board uses the wiring layer made of a flexible resin material, good insulation is ensured, and the reliability of connection over a long period is improved. There is an effect that a semiconductor device that can achieve the above can be realized.

Further, according to the present invention, since a step of forming a projecting electrode having a smaller cross-sectional area than the electrode on the electrode of the semiconductor element by using a ball bonder, it is possible to form the projecting electrode by photolithography or plating. Eliminates the need for complicated processes such as
There is an effect that a method for manufacturing a semiconductor device with high production efficiency can be provided.

According to the invention, a step of forming an adhesive layer containing no conductive particles on a surface of a semiconductor element having a protruding electrode having a smaller cross-sectional area than the electrode is provided on the electrode. Forming a layer of the agent on the surface of the wiring substrate on which the electrodes and the wiring are formed; and forming a semiconductor element having a layer of an adhesive containing no conductive particles and a layer of an anisotropic conductive adhesive. And a step of pressing and adhering to the wiring substrate, so that it is possible to reliably prevent a conductive channel from being formed between adjacent electrodes of the semiconductor element via conductive particles, and to provide an insulating property. There is an effect that a very good method for manufacturing a semiconductor device can be provided.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a sectional view illustrating a configuration of a semiconductor device according to a second embodiment of the present invention;

FIG. 3 is a sectional view illustrating a configuration of a semiconductor device according to a third embodiment of the present invention;

FIG. 4 is a view illustrating a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view showing a configuration of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 6 is a view illustrating a method of manufacturing a semiconductor device according to a sixth embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating a configuration of a conventional semiconductor device.

FIG. 8 is a cross-sectional view illustrating a configuration of a conventional semiconductor device.

FIG. 9 is a cross-sectional view showing a configuration of a conventional semiconductor device using an anisotropic conductive adhesive.

[Explanation of symbols]

Reference Signs List 1 semiconductor element 2 electrode on semiconductor element 3
Protruding electrode 4 Wiring board 5 Electrode on wiring board 6
Conductive particles 7 anisotropic conductive adhesive layer 8 wiring layer 9
Conductive lead 10 concave portion of wiring board 11 insulating layer 12
Conductive layer 13 Protrusion 14 Adhesive only layer 15
Printed circuit board 16 Wiring pattern 21 Conductive adhesive 22
Sealant 23 Solder

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Mitsunori Ishizaki 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. (72) Inventor Yoichi Kitamura 2-3-2 Marunouchi, Chiyoda-ku, Tokyo (72) Inventor Takahiro Nagamine 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation

Claims (7)

[Claims] A semiconductor element having a protruding electrode having a smaller cross-sectional area than the electrode, a wiring board having an electrode disposed at a position facing the protruding electrode, the semiconductor element and the wiring board, And a layer of an anisotropic conductive adhesive formed between the protruding electrodes and an electrode on the wiring board facing the protruding electrodes. 2. A semiconductor element having a projecting electrode having a smaller cross-sectional area than an electrode on an electrode, a wiring board having an electrode disposed at a position facing the projecting electrode, the semiconductor element and the wiring board, A plurality of layers of adhesive formed between the plurality of layers of the adhesive, wherein the plurality of layers of the adhesive are on the side of the semiconductor element, the layer of the adhesive containing no conductive particles And a layer of an anisotropic conductive adhesive on the side of the wiring board, which electrically connects the protruding electrode to an electrode on the wiring board facing the protruding electrode. 3. The semiconductor device according to claim 1, wherein the wiring substrate is a glass substrate. 4. The semiconductor device according to claim 1, wherein the wiring board is formed by laminating a printed board and a wiring layer formed of a resin material. 5. The semiconductor device according to claim 1, wherein the wiring board is a wiring layer made of a resin material having flexibility. 6. A step of forming a projecting electrode having a smaller cross-sectional area than an electrode on an electrode of a semiconductor element by a ball bonder, and applying an anisotropic conductive adhesive to a surface of the wiring substrate on which the electrode and the wiring are formed. A method of manufacturing a semiconductor device, comprising: a step of bonding; and a step of pressing the protruding electrode against an electrode of the wiring board via the anisotropic conductive adhesive. 7. A step of forming an adhesive layer containing no conductive particles on a surface of a semiconductor element having a projecting electrode having a smaller cross-sectional area than the electrode on the electrode; Forming the upper electrode and the wiring on the surface on which the wiring is formed; pressing the semiconductor element on which the adhesive layer not containing the conductive particles is formed and the wiring substrate on which the anisotropic conductive adhesive layer is formed; And bonding the semiconductor device.