JPH10123179A - Extended memory circuit system - Google Patents

Extended memory circuit system

Info

Publication number
JPH10123179A
JPH10123179A JP27660496A JP27660496A JPH10123179A JP H10123179 A JPH10123179 A JP H10123179A JP 27660496 A JP27660496 A JP 27660496A JP 27660496 A JP27660496 A JP 27660496A JP H10123179 A JPH10123179 A JP H10123179A
Authority
JP
Japan
Prior art keywords
memory
bus
extended
extended memory
memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27660496A
Other languages
Japanese (ja)
Inventor
Noboru Hosokawa
昇 細川
Toshinori Ota
利則 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Denshi KK
Original Assignee
Hitachi Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Denshi KK filed Critical Hitachi Denshi KK
Priority to JP27660496A priority Critical patent/JPH10123179A/en
Publication of JPH10123179A publication Critical patent/JPH10123179A/en
Pending legal-status Critical Current

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  • Analogue/Digital Conversion (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an extended memory circuit system by which an extended memory board can be used so as to be divided into a plurality of data buses by a method wherein a plurality of memories which are mounted on the extended memory board are changed over so as to correspond to the plurality of data buses. SOLUTION: Data buses and address buses at a memory 5 and a memory 6 can be changed over to standard memory buses D, E, D2, E2 by using tristate buffers 51 to 58. The tristate buffers 51 to 58 are controlled by a control circuit 31, and their contents are instructed by an operating device 32. For example, when a memory 5 is used as the extended memory of a memory 3 and when a memory 6 is used as the extended memory of a memory 23, tristate buffers 52, 54, 55, 57 are set at a high impedance, and tristate buffers 53, 54, 56, 58 are enabled. A bus D is selected as a bus DX1, a bus E is selected as a bus EX1, a bus D2 is selected as a bus DX2, and a bus E2 is selected as a bus EX2 so as to achieve a purpose. In this manner, a storage capacity can be extended, and it can be used so as to be divided into many systems.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、メモリシステムに
関し、特にディジタルオシロスコープ等の波形記憶装置
のメモリ拡張方式の改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a memory system, and more particularly to an improvement in a memory expansion method of a waveform storage device such as a digital oscilloscope.

【0002】[0002]

【従来の技術】図2に従来技術例を示す。2. Description of the Related Art FIG. 2 shows a prior art example.

【0003】標準の波形記憶装置にあるメモリをオプシ
ョンの増設メモリ基板等を追加し、メモリ容量を拡張し
ようとした場合のブロック図を示す。
FIG. 1 is a block diagram showing a case where the memory in a standard waveform storage device is expanded by adding an optional additional memory board or the like.

【0004】1は、AD変換器で入力信号Aをサンプリ
ングクロックBのタイミングでディジタル値に変換し、
Cに出力する。2のラッチ回路でそれをラッチし出力D
され、3のメモリの4のアドレス発生回路で出力される
アドレスに記憶される。
[0004] 1 is an AD converter that converts an input signal A into a digital value at the timing of a sampling clock B,
Output to C. 2 and latches it and outputs D
Then, the data is stored in the address output from the address generation circuit 4 of the memory 3.

【0005】10が拡張メモリ基板で、5、6のメモリ
が実装されていてデータバスDとアドレスバスEが接続
される。ここで各メモリのチップセレクト信号が省略さ
れているが、アドレスバスEの上位アドレスがその働き
をしていると考えてもらえば容易に理解できよう。この
ようにして従来は、標準のメモリのアドレスバスとデー
タバス等を接続して、メモリ容量の拡張を図っていた。
[0005] Reference numeral 10 denotes an extended memory board on which 5 and 6 memories are mounted, and a data bus D and an address bus E are connected. Here, the chip select signal of each memory is omitted, but it can be easily understood if the upper address of the address bus E performs its function. Conventionally, the memory capacity is expanded by connecting an address bus and a data bus of a standard memory.

【0006】[0006]

【発明が解決しようとする課題】前述の従来技術には、
拡張メモリがひとつのデータバスに限定されてしまい他
のデータバスに対して対応できないという欠点がある。
The above-mentioned prior art includes the following:
There is a drawback that the extension memory is limited to one data bus and cannot cope with another data bus.

【0007】[0007]

【課題を解決するための手段】本発明は上記の目的を達
成するために、拡張メモリ基板に実装された複数のメモ
リが一つのデータバスでは無く、複数のデータバスに対
応出来るようにバスの切換を行えるようにしたものであ
る。
SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a bus memory in which a plurality of memories mounted on an extended memory board can cope with a plurality of data buses instead of one data bus. The switching can be performed.

【0008】[0008]

【発明の実施の形態】以下この発明の実施例を図1を用
いて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.

【0009】図1は図2の従来例に対してAD変換器を
複数にしたもの、つまり、拡張メモリへの入力を2チャ
ネルにしたものである。
FIG. 1 shows a conventional example of FIG. 2 in which a plurality of AD converters are provided, that is, an input to an extended memory is made into two channels.

【0010】100に本発明の拡張メモリ回路を示す。
メモリ5,6のデータバスとアドレスバスが2系統の標
準メモリバスD,EとD2,E2にトライステートバッ
ファ51〜58で切り替えられるようにする。このトラ
イステートバッファは制御回路31により制御され、制
御内容の指示は操作器32から行なわれる。
Reference numeral 100 denotes an extended memory circuit of the present invention.
The data buses and the address buses of the memories 5 and 6 are switched between the two standard memory buses D and E and D2 and E2 by the tri-state buffers 51 to 58. The tri-state buffer is controlled by the control circuit 31, and an instruction of the control content is issued from the operation unit 32.

【0011】例えば、メモリ5をメモリ3の拡張メモリ
とし、メモリ6をメモリ23の拡張メモリとするには、
トライステートバッファ52,54,55,57をハイ
インピーダンスにし、トライステートバッファ53,5
4,56,58をイネーブルにすることでDX1バスに
はDバスが選択され、EX1バスにはEバスが選択さ
れ、DX2バスにはD2バスが選択され、EX2バスに
はE2バスが選択され、実現出来る。
For example, to make the memory 5 an extended memory of the memory 3 and the memory 6 an extended memory of the memory 23,
The tri-state buffers 52, 54, 55, and 57 are set to high impedance, and the tri-state buffers 53, 5
By enabling 4, 56 and 58, the D bus is selected as the DX1 bus, the E bus is selected as the EX1 bus, the D2 bus is selected as the DX2 bus, and the E2 bus is selected as the EX2 bus. Can be realized.

【0012】また、メモリ5,6共にメモリ3の拡張メ
モリとするためには、トライステートバッファ52,5
4,56,58をハイインピーダンスにし、トライステ
ートバッファ51,53,55,57をイネーブルにす
ることでバスDX1にはバスDが選択され、バスEX1
にはバスEが選択され、バスDX2にはバスDが選択さ
れ、バスEX2にはバスEが選択され、実現出来る。
更にメモリ5,6共にメモリ23の拡張メモリとするこ
とも同様に可能となる。
In order to make the memories 5 and 6 both extended memories of the memory 3, the tri-state buffers 52 and 5 are required.
The bus D is selected as the bus DX1 by setting the impedances of 4, 56 and 58 to high impedance and enabling the tri-state buffers 51, 53, 55 and 57, and the bus EX1
, The bus D is selected as the bus DX2, and the bus E is selected as the bus EX2.
Further, it is also possible to use both the memories 5 and 6 as extension memories of the memory 23.

【0013】本例で、入力A,A2に別々の信号を入力
し、BとB1に同じサンプリングクロックを入力する
と、2チャンネルの波形記憶ができる。このとき片方の
チャンネルのみメモリを拡張することも出来るし、両チ
ャンネルを拡張することも出来るようになる。
In this example, when different signals are input to inputs A and A2 and the same sampling clock is input to B and B1, waveforms of two channels can be stored. At this time, the memory can be expanded for only one channel, or both channels can be expanded.

【0014】また、入力A,A2に同じ信号を入力し、
BとB1に互いに反位相のサンプリングクロックを入力
すると、サンプリング速度が従来例の倍の速度で波形記
憶が出来るが、このときものメモリ5,6は、別々のタ
イミングで動作できるので、メモリ3,23の拡張が可
能になる。
The same signal is input to inputs A and A2,
When sampling clocks having phases opposite to each other are input to B and B1, the waveform can be stored at a sampling rate twice that of the conventional example. At this time, memories 5 and 6 can operate at different timings. 23 can be expanded.

【0015】本実施例では、増設メモリを2個で説明し
たが、もちろんそれ以上も可能である。また、メモリへ
記憶するデータも2系統で示したが、もちろんそれ以上
も可能である。
In this embodiment, two additional memories have been described. However, more than two additional memories can be used. Although the data to be stored in the memory is shown in two systems, it is needless to say that more data can be used.

【0016】[0016]

【発明の効果】実施例にも記述したが、多系統のデータ
バスの情報を記憶する場合に増設メモリの記憶容量を一
系統にまとめて使い、記憶容量を拡張することもできる
し、多系統に振り分けて記憶容量を拡張することもでき
る。
As described in the embodiments, when storing information of a multi-system data bus, the storage capacity of the additional memory can be used as one system to expand the storage capacity. To expand the storage capacity.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示すブロック図。FIG. 1 is a block diagram showing one embodiment of the present invention.

【図2】従来例を示すブロック図。FIG. 2 is a block diagram showing a conventional example.

【符号の説明】[Explanation of symbols]

1:AD変換器、2:ラッチ回路、3:メモリ、4:ア
ドレス発生回路、5:メモリ、6:メモリ、10:従来
例のメモリ増設基板、21:AD変換器、22:ラッチ
回路、23:メモリ、24:アドレス発生回路、51〜
58:トライステートバッファ回路、100:本発明の
実施例のメモリ増設基板 A:アナログ入力、B:サンプリングクロック、C:A
D変換後のディジタル値、D:波形データバス、E:ア
ドレスバス、A2:アナログ入力、B2:サンプリング
クロック、C2:AD変換後のディジタル値、D2:波
形データバス、E2:アドレスバス。
1: A / D converter, 2: Latch circuit, 3: Memory, 4: Address generation circuit, 5: Memory, 6: Memory, 10: Memory expansion board of conventional example, 21: AD converter, 22: Latch circuit, 23 : Memory, 24: address generation circuit, 51 to 51
58: tristate buffer circuit, 100: memory expansion board of the embodiment of the present invention A: analog input, B: sampling clock, C: A
Digital value after D conversion, D: waveform data bus, E: address bus, A2: analog input, B2: sampling clock, C2: digital value after AD conversion, D2: waveform data bus, E2: address bus.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 情報を記憶するメモリシステムにおい
て、複数の追加増設用メモリが、多系統の入力を切り替
え選択する手段を持つことを特徴とする増設メモリ回
路。
1. An additional memory circuit in a memory system for storing information, wherein a plurality of additional memories have means for switching and selecting inputs of multiple systems.
【請求項2】 請求項1項記載の該増設メモリ回路を持
つことを特徴とした波形記憶装置。
2. A waveform storage device comprising the additional memory circuit according to claim 1.
JP27660496A 1996-10-18 1996-10-18 Extended memory circuit system Pending JPH10123179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27660496A JPH10123179A (en) 1996-10-18 1996-10-18 Extended memory circuit system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27660496A JPH10123179A (en) 1996-10-18 1996-10-18 Extended memory circuit system

Publications (1)

Publication Number Publication Date
JPH10123179A true JPH10123179A (en) 1998-05-15

Family

ID=17571765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27660496A Pending JPH10123179A (en) 1996-10-18 1996-10-18 Extended memory circuit system

Country Status (1)

Country Link
JP (1) JPH10123179A (en)

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