JPS59151371A - Semiconductor memory element - Google Patents

Semiconductor memory element

Info

Publication number
JPS59151371A
JPS59151371A JP58016776A JP1677683A JPS59151371A JP S59151371 A JPS59151371 A JP S59151371A JP 58016776 A JP58016776 A JP 58016776A JP 1677683 A JP1677683 A JP 1677683A JP S59151371 A JPS59151371 A JP S59151371A
Authority
JP
Japan
Prior art keywords
address
line
read
data line
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58016776A
Other languages
Japanese (ja)
Inventor
Masanari Kaizuka
貝塚 真生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58016776A priority Critical patent/JPS59151371A/en
Publication of JPS59151371A publication Critical patent/JPS59151371A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Controls And Circuits For Display Device (AREA)
  • Memory System (AREA)

Abstract

PURPOSE:To attain simultaneous accessing to the same memory from plural systems by making the titled memory element accessible from two systems of address lines, providing a data line possible for read and write corresponding to one address line and providing a data line possible for read only corresponding to the other address line. CONSTITUTION:A memory element 11 has the 1st and 2nd address lines 12, 13. A data line 14 is provided corresponding to the address line 12 to read and write a data to an address selected by the address line 12 corresponding to contents of a read/write control line R/W 16. Further, a data line 15 is provided so as to read only the contents of the address selected by the address line 13. Through the constitution above mentioned, when using this memory element as a memory for, e.g., video, the address line 12 and the data line 14 have only to be connected to a CPU side and the address line and the data line 15 have only to be connected to a CRT controller side.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体メモリ素子に係り、特にアドレス線およ
びデータ線の改良に関する。
TECHNICAL FIELD OF THE INVENTION The present invention relates to semiconductor memory devices, and more particularly to improvements in address lines and data lines.

〔発明の技術的背景〕[Technical background of the invention]

タトエはマイクロコンピュータのビテオRAMは第1図
に示すように同−HJv1のアドレス線およびテータ肪
をCPU1ll11とCRTコントロール側との2系統
で切換えて使用することになる。図中Iは読み出し書き
込みメモIJ (RAM)、2はCPUアドレスgC−
ADとCI(、Tコントローラ3から出力するビデオア
ドレス線V−AIJの一方を選択してメモリlのアドレ
スを制御するマルチプレクサである。そして4はCPU
データ線C−DTの読み出し、書き込み制御を行なうデ
ータバッファ、5はメ−e+)zのデータ出力を与えら
れかつCRTコントローラ3のクロック信号CLKによ
り対応するデータをシフトレジスタ6へ並列に入力する
キャラクタジェネレータである。またシフトレジスタ6
はCRTコントローラ3から与えられるセット信号ST
によってセットされかつシフトクロック5−CLによっ
てキャラクタジェネレータ5の出力データを直列信号に
変換して順次に出力する。そしてシフトレジスタ6かも
出力される直列信号をビデオ信号合成回路7へ与えCR
,Tコントローラ3から与えられる同期信号SYCと合
成してビデオ信号VIIJEOを得る。なおマルチプレ
クサ2の切換え動作もCRTコントローラ3の制御信号
CTに同期して行ない信号を衝突しないように制御して
いる。さらにメモソノに対してはCI)Uメモリ制御信
号C−CNTを与えて、CPU側で選択時の読み出し、
書き込みのモード制御を行ない、また(1%Tコントロ
ーラ3側で選択時は読み出し信号RDを与えて読み出し
モードに制御するようにしている。
As shown in FIG. 1, the Tatoe microcomputer's video RAM is used by switching the address line and data line of the same HJv1 into two systems: the CPU1ll11 and the CRT control side. In the figure, I is read/write memory IJ (RAM), 2 is CPU address gC-
4 is a multiplexer that selects one of the video address lines V-AIJ output from the T controller 3 and controls the address of the memory l.
A data buffer that controls reading and writing of the data line C-DT, 5 is a character that is given the data output of M-e+)z and inputs the corresponding data to the shift register 6 in parallel by the clock signal CLK of the CRT controller 3. It is a generator. Also, shift register 6
is the set signal ST given from the CRT controller 3
The output data of the character generator 5 is converted into a serial signal by the shift clock 5-CL and sequentially outputted. Then, the serial signal output from the shift register 6 is sent to the video signal synthesis circuit 7 for CR.
, and the synchronizing signal SYC provided from the T controller 3 to obtain the video signal VIIJEO. Note that the switching operation of the multiplexer 2 is also performed in synchronization with the control signal CT of the CRT controller 3 to control the signals so as not to collide. Furthermore, for the memo sono, the CI)U memory control signal C-CNT is given, and the CPU side reads out the selected memory.
Write mode control is performed, and when selected on the 1%T controller 3 side, a read signal RD is given to control the read mode.

すなわち従来のメモリはデータおよびアドレスに関して
単一の入・出力を設けているので異プIつだ系統、たと
えばCPU側とC1,(、T  コントローラ(11!
Iとでその内容をアクセスする場合には、たとえば全て
のアドレス線を切換える必要があった◇ 〔背景枝術の問題点〕 このために複数系統から同一メモリをアクセスするシス
テム、たとえばCPUと(JtTコントローラからアク
セスするビデオ用のメモリ、あるいはダイレクトメモリ
アクセス(1)MA )制御の対象となるメモリ等を冶
するシステムではアドレス切換え[11路が複雑になり
コストが高価になる問題があった。また複数系統で同一
メモリを同時にアクセスすることは本質的に不町訃なた
めに、非同期回路を設けてバスの競合を除去するように
制御しなけれはならずl’f’f成が俟頼になる。
That is, since conventional memory has a single input/output for data and addresses, there are two different systems, for example, the CPU side and the controller (11!) and the controller (11!).
When accessing the contents with I, for example, it was necessary to switch all the address lines◇ [Problems with background branching techniques] For this reason, systems that access the same memory from multiple systems, such as the CPU and (JtT In systems that control video memory accessed from a controller or memory that is subject to direct memory access (1) MA) control, there is a problem in that address switching [11] becomes complicated and costs increase. Also, since it is inherently unwise to access the same memory in multiple systems at the same time, an asynchronous circuit must be provided to control the bus to eliminate contention, and l'f'f configuration is unreliable. become.

さらには複〃f系統で同一メモリをアクセスオ゛るシス
テムで゛該メ七りのアクセスの比率の高いものではシス
テム全体のスルーグツトが低下する問題もあった。
Furthermore, in a system in which the same memory is accessed by multiple f systems, there is a problem in that the throughput of the entire system is reduced in a system in which the ratio of accesses by these systems is high.

〔発明の目的〕[Purpose of the invention]

本発明は上記の事情に鑑みてなされたもので複数系統か
ら同一メモリに対して同時にアクセスすることができか
つ、各系統に対応するアドレス線を設けてシステムの構
成を簡単にできる牛導体メモリ累子を提供することを目
的とするものである。
The present invention has been made in view of the above-mentioned circumstances, and it is possible to access the same memory from multiple systems at the same time, and to simplify the configuration of the system by providing address lines corresponding to each system. The purpose is to provide children.

〔発明の概要〕[Summary of the invention]

すなわち本発明は、2系統のアドレス基jによりそれぞ
れ独立に内容をアクセスできるようにし、かつ一方のア
ドレス線に対応して読み出し、書き込み可能なデータ線
を設け、他方のアドレス線に対応して読み出しだけが可
能な出力専用のアドレス線を設けることを特徴とするも
のである。
In other words, the present invention allows the contents to be accessed independently by two address bases, and provides a readable and writable data line corresponding to one address line, and a readable and writable data line corresponding to the other address line. This feature is characterized by providing an address line exclusively for output, which is possible only for output.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の一実施例を第2図に示づ一ブロック図を参
照して詳細に説明する。第2図において1ノは本発明に
よるメモリ素子で第1のアドレス線12および第2のア
ドレス線13を有する。そして第1のアドレス線12に
対応して第1のデータ線14を設け、第1のアドレス線
I2で選択したアドレスに読み書き制御Q R/W t
 6の内容に応じて読み出し、および書き込みを行なう
。また第2のアドレス線Z3に対応して第2のデータ線
Z5を設け、第2のアドレス線13で選択したアドレス
の内容の読み出しだけを行なえるようにしている。
An embodiment of the present invention will be described in detail below with reference to a block diagram shown in FIG. In FIG. 2, reference numeral 1 denotes a memory element according to the present invention having a first address line 12 and a second address line 13. In FIG. A first data line 14 is provided corresponding to the first address line 12, and read/write control Q R/W t is applied to the address selected by the first address line I2.
Reading and writing are performed according to the contents of 6. Further, a second data line Z5 is provided corresponding to the second address line Z3, so that only the contents of the address selected by the second address line 13 can be read.

このような構成であれば、このメモリ素子を、たとえば
ビデオ用のメモリとして用いる場合、第1のアドレス線
12および第1のデータ線I4をCPLJ側へ接続し、
第2のアドレスalSおよび第2のデータ線15をCR
Tコントローラ側に接84して用いれはよい。このよう
にすれば全体の構成を著るしくm)単にすることができ
、バスの競合を生じることなく、シかもアドレス線の切
換えを竹なう必要がなく、同時に第1、第2のアドレス
線でメモリ素子の内容をアクセスできることと相俟って
高速動作を行なえスループットの低下も着るしく少なく
できる。
With such a configuration, when this memory element is used as a video memory, for example, the first address line 12 and the first data line I4 are connected to the CPLJ side,
CR the second address alS and the second data line 15
It may be used by connecting it to the T controller side. In this way, the overall configuration can be significantly simplified, without causing bus contention, and without having to switch the address lines. Coupled with the fact that the contents of the memory element can be accessed through wires, high-speed operation can be performed and the drop in throughput can be significantly reduced.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように本発明によれは2系統のアドレス線
でそれぞれ独立にメモリの内容をアクセスできるのでシ
ステムの構成を簡単にできコストを安価にすることかり
能でしかもスループットの低下を少なくできる生導体メ
モリ素子を提供することができる。
As described in detail above, according to the present invention, the contents of the memory can be accessed independently using two address lines, which simplifies the system configuration, lowers the cost, and reduces the drop in throughput. A live conductor memory element can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はビデオR,AMの一例を示すブロック図、第2
図は本発明の一実施例を示すブロック図である。 11・・メモリ素子、12・・・第1のアドレス線、1
3・・・第2のアドレス線、14・・・第1のデータ線
、I5・・・第2のデータ線、I6・・・読み書き制御
轟〇 出願人代理人 弁理士  鈴 江 武 彦459−
Figure 1 is a block diagram showing an example of video R and AM;
The figure is a block diagram showing one embodiment of the present invention. 11...Memory element, 12...First address line, 1
3...Second address line, 14...First data line, I5...Second data line, I6...Read/write control Todoroki Applicant's agent Patent attorney Takehiko Suzue 459-

Claims (1)

【特許請求の範囲】[Claims] 相互に独立してメモリ素子の内容を選択する第1のアド
レス線および第2のアドレス線と、第1のアドレス線で
選択したアドレスに対して読み書き制御蔵の内容に応じ
て読み出しまたは豊き込みを行なう第1のデータ線と、
第2のアドレス線で選択したアドレスの内容を読み出す
鎖2のデータ線とを具備する半導体メモリ素子。
A first address line and a second address line that select the contents of the memory element independently of each other, and read or enrich the address selected by the first address line according to the contents of the read/write control register. a first data line for performing
and a chain 2 data line for reading out the contents of an address selected by a second address line.
JP58016776A 1983-02-03 1983-02-03 Semiconductor memory element Pending JPS59151371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58016776A JPS59151371A (en) 1983-02-03 1983-02-03 Semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58016776A JPS59151371A (en) 1983-02-03 1983-02-03 Semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS59151371A true JPS59151371A (en) 1984-08-29

Family

ID=11925598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58016776A Pending JPS59151371A (en) 1983-02-03 1983-02-03 Semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS59151371A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6231886A (en) * 1985-08-02 1987-02-10 株式会社日立製作所 Display controller
US5319596A (en) * 1991-06-27 1994-06-07 Nec Corporation Semiconductor memory device employing multi-port RAMs
US5359557A (en) * 1992-12-04 1994-10-25 International Business Machines Corporation Dual-port array with storage redundancy having a cross-write operation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114226A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Data processing device
JPS52129337A (en) * 1976-04-23 1977-10-29 Hitachi Ltd Memory circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114226A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Data processing device
JPS52129337A (en) * 1976-04-23 1977-10-29 Hitachi Ltd Memory circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6231886A (en) * 1985-08-02 1987-02-10 株式会社日立製作所 Display controller
US5319596A (en) * 1991-06-27 1994-06-07 Nec Corporation Semiconductor memory device employing multi-port RAMs
US5359557A (en) * 1992-12-04 1994-10-25 International Business Machines Corporation Dual-port array with storage redundancy having a cross-write operation

Similar Documents

Publication Publication Date Title
KR20070108331A (en) A semiconductor memory
JPH03167487A (en) Test facilitating circuit
JPS59151371A (en) Semiconductor memory element
JPH02210685A (en) Dram controller
JPS61138330A (en) Buffer circuit
JPS6136854A (en) Memory switching device
JP2636253B2 (en) Expansion bus method
JPH07209389A (en) High-speed pattern generator
JPH01194052A (en) Data input/output circuit for digital signal processing processor
JP3038618B2 (en) Memory device with built-in test circuit
JP2545719Y2 (en) Memory test data selection circuit
JPH11282794A (en) Memory access system
JPH0668920B2 (en) ROM read test circuit
JPH0375944A (en) Information processor
JPH05134867A (en) Control storage access system
JPH0370052A (en) Address translation circuit, memory controller, information processor, and recorder
JPH0619737B2 (en) Memory access device
JPS6148057A (en) Address selecting circuit
JPH0667769A (en) Single chip microcomputer
JPH05189305A (en) Memory control method
JPH08106430A (en) Data transfer method
JPH07121483A (en) Shared memory access control circuit
JPS6325717A (en) Data transfer circuit
JPH02276090A (en) Semiconductor memory integrated circuit
JPH01106148A (en) Multi-port memory device