JPH10115932A - 位相シフトマスクを用いた露光方法 - Google Patents

位相シフトマスクを用いた露光方法

Info

Publication number
JPH10115932A
JPH10115932A JP8268462A JP26846296A JPH10115932A JP H10115932 A JPH10115932 A JP H10115932A JP 8268462 A JP8268462 A JP 8268462A JP 26846296 A JP26846296 A JP 26846296A JP H10115932 A JPH10115932 A JP H10115932A
Authority
JP
Japan
Prior art keywords
mask
light
exposure
pattern
phase shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8268462A
Other languages
English (en)
Japanese (ja)
Inventor
Shuji Nakao
修治 中尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8268462A priority Critical patent/JPH10115932A/ja
Priority to DE19712281A priority patent/DE19712281A1/de
Priority to KR1019970023136A priority patent/KR19980032147A/ko
Publication of JPH10115932A publication Critical patent/JPH10115932A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8268462A 1996-10-09 1996-10-09 位相シフトマスクを用いた露光方法 Pending JPH10115932A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8268462A JPH10115932A (ja) 1996-10-09 1996-10-09 位相シフトマスクを用いた露光方法
DE19712281A DE19712281A1 (de) 1996-10-09 1997-03-24 Projektionsbelichtungsvorrichtung und Projektionsbelichtungsverfahren unter Verwendung einer Phasenverschiebungsmaske
KR1019970023136A KR19980032147A (ko) 1996-10-09 1997-06-04 위상 시프트 마스크를 사용한 투영 노광방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8268462A JPH10115932A (ja) 1996-10-09 1996-10-09 位相シフトマスクを用いた露光方法

Publications (1)

Publication Number Publication Date
JPH10115932A true JPH10115932A (ja) 1998-05-06

Family

ID=17458845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8268462A Pending JPH10115932A (ja) 1996-10-09 1996-10-09 位相シフトマスクを用いた露光方法

Country Status (3)

Country Link
JP (1) JPH10115932A (de)
KR (1) KR19980032147A (de)
DE (1) DE19712281A1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG99416A1 (en) * 2002-03-05 2003-10-27 Asml Netherlands Bv Apparatus and system for improving phase shift mask imaging performance and associated methods
JP2007158328A (ja) * 2005-11-30 2007-06-21 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2010251761A (ja) * 2009-04-16 2010-11-04 Asml Netherlands Bv デバイス製造方法およびリソグラフィ装置
JP2011040775A (ja) * 2006-05-31 2011-02-24 Asml Holding Nv リソグラフィシステムにおけるピッチを有する干渉パターンを印刷するためのシステムおよび方法
JP2015103810A (ja) * 2013-11-22 2015-06-04 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 極端紫外線リソグラフィプロセスおよび低減されたシャドウ効果および向上した強度を有するマスク

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3200894B2 (ja) * 1991-03-05 2001-08-20 株式会社日立製作所 露光方法及びその装置
US5348837A (en) * 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG99416A1 (en) * 2002-03-05 2003-10-27 Asml Netherlands Bv Apparatus and system for improving phase shift mask imaging performance and associated methods
US6967712B2 (en) 2002-03-05 2005-11-22 Asml Holding N.V. Apparatus and system for improving phase shift mask imaging performance and associated methods
US7098995B2 (en) 2002-03-05 2006-08-29 Asml Holding N.V. Apparatus and system for improving phase shift mask imaging performance and associated methods
JP2007158328A (ja) * 2005-11-30 2007-06-21 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2011040775A (ja) * 2006-05-31 2011-02-24 Asml Holding Nv リソグラフィシステムにおけるピッチを有する干渉パターンを印刷するためのシステムおよび方法
US8934084B2 (en) 2006-05-31 2015-01-13 Asml Holding N.V. System and method for printing interference patterns having a pitch in a lithography system
JP2010251761A (ja) * 2009-04-16 2010-11-04 Asml Netherlands Bv デバイス製造方法およびリソグラフィ装置
JP2015103810A (ja) * 2013-11-22 2015-06-04 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 極端紫外線リソグラフィプロセスおよび低減されたシャドウ効果および向上した強度を有するマスク

Also Published As

Publication number Publication date
DE19712281A1 (de) 1998-04-23
KR19980032147A (ko) 1998-07-25

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