JPH10112437A - Semiconductor board treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a soaking plate from cracking as a soaking plate structure which reduces thermal stress by arranging a slit in a soaking plate in a semiconductor board treatment device which performs heating treatment for a semiconductor board inside a board treatment chamber through a soaking plate. SOLUTION: A treatment chamber 1 has a gas supply device 2 for introducing raw gas, wafer cooling gas, etc., and an exhaust device 3. A semiconductor wafer 4 inside the treatment chamber 1 is heated by a heater 6 through a soaking plate 5 consisting of SiC(silicon carbide). In the process, a slit 7 is provided in the soaking plate 5 for reducing thermal stress. When the wafer 4 inside the treatment chamber 1 is heated through the soaking plate 5 with the slit 7 in this way, crack is not generated in the soaking plate 5 even if it is cooled rapidly by He gas. According to simulation, maximum thermal stress of the soaking plate 5 in the process is reduced by about half when compared with a device which is not provided with the slit 7.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to an annealing apparatus, C
The present invention relates to a semiconductor substrate processing apparatus such as a VD (Chemical Vapor Deposition) apparatus and an impurity diffusion apparatus, and more particularly to a semiconductor substrate processing apparatus which requires a uniform processing temperature of a semiconductor wafer and a short processing time.

[0002]

2. Description of the Related Art Conventionally, a semiconductor substrate processing apparatus includes, for example, a vapor phase diffusion apparatus for diffusing impurities for determining a conductivity type into a semiconductor wafer by a vapor phase diffusion method, and heating the wafer by infrared lamp heating or resistance heating. Various apparatuses such as an annealing apparatus and a CVD apparatus are known.

In these processing apparatuses, in order to uniformly heat a wafer, for example, as described in JP-A-4-239120 and JP-A-5-90165, a soaking plate is heated by a plurality of heaters. And a method of heating the wafer via a soaking plate using a lamp, as described in, for example, JP-A-4-243123.

[0004] In recent years, with the increase in the diameter of wafers, it has become increasingly important to make the wafer processing temperature uniform.
In particular, as circuit patterns are miniaturized, short-time processing tends to be required in order to form a thin oxide film or to reduce the diffusion depth of impurities. For example, rapid heating (200 ° C./sec) and cooling (−100 ° C./sec) can be performed for thin film growth, and uniform temperature distribution in the wafer surface during rapid heating and cooling. Etc. are required.

[0005]

The heat equalizing plate of the conventional semiconductor substrate processing apparatus is composed of a disc member having good thermal conductivity such as carbon. When a temperature difference occurs between the center and the end or when the temperature becomes uneven in the soaking plate, there is a problem that the soaking plate is cracked by thermal stress.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor substrate processing apparatus which has a heat equalizing plate structure for reducing thermal stress and eliminates cracks in the heat equalizing plate, thereby improving the operation rate of the apparatus.

[0007]

In order to achieve the above object, the present invention provides a semiconductor substrate processing apparatus for heating a semiconductor substrate in a substrate processing chamber through a heat equalizing plate. Arrange.

In a semiconductor substrate processing apparatus for heating a semiconductor substrate in a substrate processing chamber via a soaking plate,
The heat equalizing plate is divided and provided.

Further, in the semiconductor substrate processing apparatus described above, the heat equalizing plates may be combined and provided.

[0010]

1 and 2 are longitudinal sectional views of a main part of a CVD apparatus using a lead oxide source gas in a semiconductor substrate processing apparatus according to an embodiment of the present invention. The processing chamber 1 includes a gas supply device 2 and an exhaust device 3 for introducing a source gas, a wafer cooling gas, and the like. The semiconductor wafer 4 in the processing chamber 1 is heated by a heater 6 via a soaking plate 5 made of SiC (silicon carbide). By providing the slits 7 in the heat equalizing plate 5, thermal stress is reduced. The slit may have a spiral shape as shown in FIG.

The processing is performed by the gas supply device 2 and the heater 6 in the processing chamber 1 whose pressure is controlled to several Torr by the exhaust device 3.
The raw material gas is caused to flow on the wafer 4 uniformly heated to 600 ° C. via the soaking plate 5 to form a thin film. Immediately after the film formation, the high-temperature wafer 4 is rapidly cooled (−100 ° C./sec) with He gas to suppress evaporation of lead in the film.
Improve film quality (crystallinity).

In this manner, the wafer 4 in the processing chamber 1 is
Is heated through the heat equalizing plate 5 provided with the slits 7 and He
Rapid cooling with gas. No cracks occurred in the heat equalizing plate 5 according to this example. According to the simulation,
At this time, the maximum thermal stress of the heat equalizing plate 5 was reduced to about half as compared with the conventional device in which the slit 7 was not provided.

The shape and dimensions of the slits should be as small as possible.
A smaller one is desirable.

FIGS. 3 and 4 are longitudinal sectional views of a main part of an impurity diffusion apparatus for diffusing B into a Si wafer 4 in a semiconductor substrate processing apparatus according to another embodiment of the present invention. In this apparatus, a quartz window 8 is provided in a partition wall of a processing chamber 1, and a wafer 4 is heated by a heating lamp 9 through a heat equalizing plate 5 having a divided structure. This is the same as the device configuration in FIG. The heat equalizing plate 5 may be divided into concentric circles as shown in FIG.

Referring to the drawings, diborane (B ₂ H ₆ ) is introduced by the gas supply device 2 at a flow rate of 10 SCCM (Standard CC / Minuts).
The Si wafer 4 was rapidly heated at 1000 ° C. for 20 seconds (heating rate of 50 ° C./sec) by lamp heating to diffuse B impurities for about 30 minutes.

Thereafter, the supply of the reaction gas is stopped, and hydrogen purging is performed by the gas supply device 2 (only hydrogen gas is supplied).
And the wafer 4 is rapidly cooled.

In this manner, the wafer 4 in the processing chamber 1 is
Is rapidly heated through a soaking plate 5 having a divided structure, and rapidly cooled with hydrogen gas. Also in this example, no breakage of the heat equalizing plate 5 due to thermal stress occurred.

Although the heat equalizing plate 5 having a divided structure is used here, the same result can be obtained by using a heat equalizing plate provided with slits as described with reference to FIGS. Furthermore, the heat equalizing plate 5 having a divided structure may be used in the apparatus described with reference to FIGS.

FIGS. 5 and 6 are longitudinal sectional views of a main part of a semiconductor substrate processing apparatus according to still another embodiment of the present invention.
The apparatus shown in FIG. 5 prepares two heat equalizing plates 5 having the slits 7 described in FIGS. 1 and 2 and installs them so that the phases of the slits are shifted from each other. Is a heat equalizing plate 5 having the split structure described with reference to FIGS. 3 and 4, in which two heat equalizing plates 5 having different dividing positions are prepared and placed one on top of the other.

Thus, the effect as described above can be obtained. In addition, we shift phase of slit of soaking plate,
By changing the dividing position, the raw material gas is directly supplied to the heater 6.
Of the wafer 4 due to the slits and the division can be reduced.

FIG. 7 is a longitudinal sectional view of a main part of a semiconductor substrate processing apparatus according to still another embodiment of the present invention.

In this apparatus, two heat equalizing plates 5 having the divided structure described with reference to FIG. 4 are prepared and placed one on top of the other. The heat capacity differs between the center and the end of the heat equalizing plate 5.

Generally, during heating, the temperature at the center of the wafer is higher than that at the periphery. Therefore, the heat capacity at the center of the heat equalizing plate 5 is increased to suppress the temperature rise at the center of the heat equalizing plate 5, thereby increasing the temperature. Even at this time, the temperature uniformity of the wafer 4 is maintained.

The heat equalizing plate 5 having the divided structure described with reference to FIG.
The same effect can be obtained by changing the thickness or the material depending on the divided portion.

Further, in FIGS. 5, 6 and 7, a plurality of heat equalizing plates are used for explanation. However, a distance is provided between the heat equalizing plates or a distance between the heat equalizing plates. The same effect can be obtained by changing the distance or by arbitrarily changing the relative distance between the wafer 4, the heat equalizing plate 5, and the heating means such as the heater 6 or the lamp 9.

That is, by various combinations of the soaking plates, the temperature of the wafer 4 can be controlled only by the soaking plate 5, and complicated zone heater control is not required, so that the structure becomes simple and the apparatus can be inexpensive. .

[0027]

According to the semiconductor substrate processing apparatus of the present invention, the thermal stress of the heat equalizing plate can be reduced by disposing the heat equalizing plate with slits or disposing the heat equalizing plate separately. Does not crack during processing. Therefore, the operation rate of the device can be improved.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a main part of a semiconductor substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a longitudinal sectional view of a main part of a semiconductor substrate processing apparatus according to a second embodiment of the present invention.

FIG. 3 is a longitudinal sectional view of a main part of a semiconductor substrate processing apparatus according to a third embodiment.

FIG. 4 is a longitudinal sectional view of a main part of a semiconductor substrate processing apparatus according to a fourth embodiment.

FIG. 5 is a longitudinal sectional view of a main part of a semiconductor substrate processing apparatus according to a fifth embodiment.

FIG. 6 is a longitudinal sectional view of a main part of a semiconductor substrate processing apparatus according to a sixth embodiment.

FIG. 7 is a longitudinal sectional view of a main part of a semiconductor substrate processing apparatus according to a seventh embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Processing chamber, 2 ... Gas supply apparatus, 3 ... Exhaust apparatus, 4 ... Semiconductor wafer, 5 ... Heat equalizing plate, 6 ... Heater, 7 ... Slit, 8 ... Quartz window, 9 ... Heating lamp.

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Masakazu Sugaya 1-280 Higashi-Koigakubo, Kokubunji-shi, Tokyo Inside the Central Research Laboratory of Hitachi, Ltd. Central Research Laboratory

Claims (3)

[Claims] 1. A semiconductor substrate processing apparatus for heating a semiconductor substrate in a substrate processing chamber through a heating plate, wherein the heating plate is provided with a slit. 2. A semiconductor substrate processing apparatus for heating a semiconductor substrate in a substrate processing chamber via a heating plate, wherein the heating plate is divided and disposed. 3. The semiconductor substrate processing apparatus according to claim 1, wherein said heating plate is provided in combination.