JPH10107092A - Tape with bonding agent for tab, tab tape and semiconductor device - Google Patents

Tape with bonding agent for tab, tab tape and semiconductor device

Info

Publication number
JPH10107092A
JPH10107092A JP8262012A JP26201296A JPH10107092A JP H10107092 A JPH10107092 A JP H10107092A JP 8262012 A JP8262012 A JP 8262012A JP 26201296 A JP26201296 A JP 26201296A JP H10107092 A JPH10107092 A JP H10107092A
Authority
JP
Japan
Prior art keywords
tape
tab
adhesive
film
bonding agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8262012A
Other languages
Japanese (ja)
Other versions
JP4168456B2 (en
Inventor
Yasuhiro Koyama
康博 小山
Akihiro Kabashima
昭紘 椛島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP26201296A priority Critical patent/JP4168456B2/en
Publication of JPH10107092A publication Critical patent/JPH10107092A/en
Application granted granted Critical
Publication of JP4168456B2 publication Critical patent/JP4168456B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive

Landscapes

  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the generation of the shift of the pitch between first and second mold-release films constituting a TAB tape due to the warpage and undulations of the TAB tape by a method wherein the regain of a tape with a bonding agent for TAB use in a thermal laminating process of the tape with a bonding agent for TAB use with a copper foil is specified. SOLUTION: A bonding agent-resin mixed solution is applied and dried on a first mold-release film, a second mold-release film is laminated to the first mold-release film according to the need and the integrally formed film is slit in a target width. The first or second mold-release film is peeled off from this slit flexible insulating film 1, such as a polyimide film, to laminate a bonding agent surface 2 to the film 1. The regain of the formed tape with a bonding agent for TAB is adjusted at 0.4 to 0.8%, preferably in the extent of 0.6 to 0.7%, and after that, a TAB tape is formed via a TAB tape production process. Thereby, the generation of problems of the shift of the pitch between the first and second mold-release films or the like at the time of mounting of the TAB tape due to the warpage and undulations of the TAB tape is eliminated in a processing process of the TAB tape and the TAB tape can be manufactured at a high yield.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、TAB(テープ・
オートメーテッド・ボンディング)方式と称する半導体
集積回路実装用テープ(以下、TABテープと略す)に
使用される接着剤付きテープ、TABテープおよび半導
体装置に関するものである。
[0001] The present invention relates to a TAB (tape / tape).
The present invention relates to a tape with an adhesive, a TAB tape, and a semiconductor device used for a tape for mounting a semiconductor integrated circuit (hereinafter, abbreviated as a TAB tape) referred to as an automated bonding method.

【0002】[0002]

【従来の技術】一般に、TAB用テープは、ポリイミド
フィルム等の可撓性を有する有機絶縁性フィルム上に、
接着剤層および保護フィルム層として離型性を有するポ
リエステルフィルム等を積層した3層構造より構成され
ている。
2. Description of the Related Art In general, TAB tape is formed on a flexible organic insulating film such as a polyimide film.
It has a three-layer structure in which a polyester film having releasability is laminated as an adhesive layer and a protective film layer.

【0003】TAB用テープは、(1)スプロケットおよ
びデバイス孔の穿孔、(2)銅箔との熱ラミネート、(3)接
着剤加熱キュア、(4)パターン形成(レジスト塗布、エ
ッチング、レジスト除去)、(5)スズまたは金メッキ処
理などの加工工程を経てTABテープ(パターンテー
プ)に加工される。図1にパターンテープの形状を示
す。図2に半導体装置の一態様の断面図を示す。パター
ンテープのインナーリード部6を、半導体集積回路8の
金バンプ10に熱圧着(インナーリードボンディング)
し、半導体集積回路を搭載する。次いで、封止樹脂9に
よる樹脂封止工程を経て半導体装置が作成される。ま
た、インナーリード部を有さず、パターンテープの導体
と半導体集積回路の金バンプとの間をワイヤーボンディ
ングで接続する方式も採用されている。このような半導
体装置をテープキャリアパッケージ(TCP)型半導体
装置と称する。TCP型半導体装置は、他の部品を搭載
した回路基板等とアウターリード7を介して接続(アウ
ターリードボンディング)され、電子機器への実装がな
される。
[0003] TAB tapes include (1) perforation of sprockets and device holes, (2) thermal lamination with copper foil, (3) adhesive curing, and (4) pattern formation (resist coating, etching, resist removal). (5) Processed into a TAB tape (pattern tape) through processing steps such as tin or gold plating. FIG. 1 shows the shape of the pattern tape. FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device. The inner lead portion 6 of the pattern tape is thermocompression bonded to the gold bump 10 of the semiconductor integrated circuit 8 (inner lead bonding).
Then, a semiconductor integrated circuit is mounted. Next, a semiconductor device is manufactured through a resin sealing step using a sealing resin 9. In addition, a method in which a conductor of a pattern tape and a gold bump of a semiconductor integrated circuit are connected by wire bonding without using an inner lead portion is also adopted. Such a semiconductor device is called a tape carrier package (TCP) type semiconductor device. The TCP type semiconductor device is connected to a circuit board or the like on which other components are mounted via outer leads 7 (outer lead bonding), and is mounted on an electronic device.

【0004】一方、近年の電子機器の小型・軽量化に伴
い、半導体パッケージも高密度実装化を目的に、従来の
接続端子(アウターリード)をパッケージ側面に配列し
ていたQFP(クワッド・フラット・パッケージ)、S
OP(スモール・アウトライン・パッケージ)に代わ
り、パッケージの裏面に接続端子を配列するBGA(ボ
ールグリッドアレイ)、CSP(チップスケールパッケ
ージ)、が一部用いられるようになってきた。BGA,
CSPがQFP,SOPと構造的に最も大きく異なる点
は、前者は、インターポーザーと称される基板を必要と
するのに対し、後者は金属製のリードフレームを用いる
ことにより必ずしも基板を必要としない点にある。ここ
でいうインターポーザーは、ガラスエポキシ基板やポリ
イミド等の有機絶縁性フィルムに銅箔を張り合わせたも
のが一般的に用いられる。したがって、これらBGA,
CSPなどの半導体装置にも本発明のTAB用接着剤付
きテープを使用することができ、得られたBGA,CS
Pも本発明の半導体装置に含まれる。図3および図4に
本発明の半導体装置(BGA,CSP)の一態様の断面
図を示す。
On the other hand, as electronic devices have become smaller and lighter in recent years, a semiconductor package has a QFP (quad flat flat) in which conventional connection terminals (outer leads) are arranged on the side of the package for the purpose of high-density mounting. Package), S
Instead of an OP (Small Outline Package), a BGA (Ball Grid Array), in which connection terminals are arranged on the back surface of the package, and a CSP (Chip Scale Package) have been partially used. BGA,
The point that the CSP is structurally most different from the QFP and the SOP is that the former requires a substrate called an interposer, whereas the latter does not necessarily require a substrate by using a metal lead frame. On the point. As the interposer referred to here, one obtained by bonding a copper foil to an organic insulating film such as a glass epoxy substrate or polyimide is generally used. Therefore, these BGA,
The tape with an adhesive for TAB of the present invention can be used for a semiconductor device such as a CSP, and the obtained BGA, CS
P is also included in the semiconductor device of the present invention. 3 and 4 are cross-sectional views of one embodiment of the semiconductor device (BGA, CSP) of the present invention.

【0005】上記のパッケージ形態では最終的にTAB
テープは、高密度なパッケージ内部に残留するため、絶
縁性、耐熱性、銅箔との接着性、寸法安定性、平面性が
要求される。
In the above package form, TAB
Since the tape remains inside the high-density package, it is required to have insulation, heat resistance, adhesion to copper foil, dimensional stability, and flatness.

【0006】近年、電子機器の小型化、高性能化、高密
度化に伴い、それらに搭載される半導体デバイスの高機
能化、高集積化、スリム化が進んでいる。このため半導
体デバイスの電極およびTABリードのピッチの微細化
は急速に進行している。それに伴いTABテープの寸法
安定性すなわちTABテープの平面性がこれまでにも増
して重要になってきた。
In recent years, with the miniaturization, high performance, and high density of electronic devices, semiconductor devices mounted on them have become more sophisticated, highly integrated, and slimmer. For this reason, the miniaturization of the pitch of the electrodes and the TAB leads of the semiconductor device is rapidly progressing. Accordingly, the dimensional stability of the TAB tape, that is, the flatness of the TAB tape has become more important than ever.

【0007】TABリードのピッチの微細化ならびにT
ABのスリム化はTABそのものの回路(パターン)形
成を困難にし、信頼性の観点からもIC実装や電子機器
への実装の難易度が増すことになる。すなわち、銅箔と
の熱ラミネート工程、接着剤加熱キュア工程でTABテ
ープに反りやうねりが発生することにより回路形成を困
難にし、この反りやうねりがアウターリードなどの電子
機器への実装の際にピッチずれとなり、歩留まりの低下
の原因になっていた。
[0007] Fine pitch of TAB lead and T
The slimming of the AB makes it difficult to form a circuit (pattern) of the TAB itself, and from the viewpoint of reliability, the difficulty of mounting the IC on an IC or an electronic device increases. In other words, the TAB tape is warped or undulated in the heat laminating step with the copper foil or the adhesive heating and curing step, thereby making it difficult to form a circuit. This warpage or undulation is likely to occur when mounting on an electronic device such as an outer lead. A pitch shift resulted in a decrease in yield.

【0008】反りやうねりなどの平面性の向上方法とし
て、線膨脹係数が銅箔と同等もしくはそれ以下のポリイ
ミドフイルムを用い、該ポリイミドフイルムの温度が銅
箔温度より高い状態で該ポリイミドフイルムと銅箔とを
ラミネートする方法(特開平8−58020号公報)、
再熱処理したポリイミドフイルムを用い、フイルム張力
とフイルム側加熱ロール温度を規定する方法(特公平7
−35106号公報)などが提案されている。
As a method for improving flatness such as warpage and undulation, a polyimide film having a linear expansion coefficient equal to or less than that of a copper foil is used, and the polyimide film and the copper film are heated at a temperature higher than the copper foil temperature. A method of laminating with a foil (JP-A-8-58020),
A method of regulating the film tension and the temperature of the film-side heating roll by using the heat-treated polyimide film (Japanese Patent Publication No.
No.-35106) has been proposed.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、上記方
法は多少の改善効果があるものの、近年の電子機器の軽
薄短小化に伴う急速なTABリードの微細化の進行に対
応するには充分でなかった。
However, although the above-mentioned method has some improvement effects, it is not enough to cope with the rapid progress of miniaturization of TAB leads in recent years as electronic devices become lighter and thinner. .

【0010】そこで本発明では、TABテープの反りや
うねりによるピッチずれ等の欠点を改良するために、銅
箔との熱ラミネート工程でのTAB用接着剤付きテープ
の水分率を規定することにより、IC実装や電子機器へ
の実装の際のピッチずれを防止した微細化に適したTA
B用接着剤付きテープおよびそれから得られたTABテ
ープおよび半導体装置を提供するものである。
Therefore, in the present invention, in order to improve defects such as pitch deviation due to warpage or undulation of the TAB tape, the water content of the tape with the TAB adhesive in the heat laminating step with the copper foil is specified. TA suitable for miniaturization that prevents pitch shift during IC mounting and mounting on electronic equipment
An object of the present invention is to provide a tape with an adhesive for B, a TAB tape obtained therefrom, and a semiconductor device.

【0011】[0011]

【課題を解決するための手段】本発明の目的は、少なく
とも絶縁フイルム上に接着剤層を積層したTAB用接着
剤付きテープにおいて、該テープの水分率が0. 4〜
0. 8%の範囲であることを特徴とするTAB用接着剤
付きテープ並びにそれから得られたTABテープおよび
半導体装置により達成される。
SUMMARY OF THE INVENTION An object of the present invention is to provide a tape with an adhesive for TAB having at least an adhesive layer laminated on an insulating film, wherein the tape has a water content of 0.4 to less.
This is achieved by a TAB adhesive tape, and a TAB tape and a semiconductor device obtained therefrom, which are characterized in the range of 0.8%.

【0012】[0012]

【発明の実施の形態】本発明のTAB用接着剤付きテー
プは、基本構成が絶縁フイルム上に接着剤層を積層した
ものである。
BEST MODE FOR CARRYING OUT THE INVENTION The adhesive tape for TAB of the present invention has a basic structure in which an adhesive layer is laminated on an insulating film.

【0013】本発明に使用される絶縁フイルムとして
は、ポリイミド、ポリエーテルイミド、芳香族ポリアミ
ドなどのいわゆる耐熱性フイルム、あるいはフレキシブ
ルエポキシ/ガラスクロスなどの複合材料などが使用で
きる。なかでも、ポリイミドフイルムは、熱寸法安定性
の点から特に好ましい。絶縁フィルムとしては通常可と
う性のものが使用できる。
As the insulating film used in the present invention, a so-called heat-resistant film such as polyimide, polyetherimide, or aromatic polyamide, or a composite material such as flexible epoxy / glass cloth can be used. Among them, a polyimide film is particularly preferable from the viewpoint of thermal dimensional stability. Usually, a flexible film can be used as the insulating film.

【0014】本発明に使用される接着剤層は、熱硬化型
のもので半硬化状の接着剤であることが好ましい。たと
えば、ポリアミド樹脂、フェノール樹脂などを含有する
ものである。好ましくはさらにエポキシ樹脂、硬化剤な
どを含有するものである。接着剤の諸特性を劣化させな
い範囲で、シリカ、アルミナなどの微粒子を添加しても
よい。
The adhesive layer used in the present invention is preferably a thermosetting type and a semi-cured adhesive. For example, it contains a polyamide resin, a phenol resin and the like. Preferably, it further contains an epoxy resin, a curing agent and the like. Fine particles such as silica and alumina may be added as long as the properties of the adhesive are not deteriorated.

【0015】接着剤層の成分であるポリアミド樹脂は、
酸とジアミンの混合物を熱重合することによって得られ
るもので、メタノールなどのアルコール類を主要成分と
する混合溶剤に溶解可能なものがすべて使用できる。と
りわけ、ポリアミド樹脂の原料として炭素数が36個で
あるジカルボン酸(いわゆる「ダイマー酸」)が主要成
分となっているもの(通称「ダイマー酸系ポリアミ
ド」)が好ましい。ポリアミド樹脂は一般的に吸水率が
大きいため絶縁抵抗が低くなる傾向があるが、ダイマー
酸を使用することによって、吸水率を小さくし電気絶縁
性を高くすることが可能となるためである。
The polyamide resin, which is a component of the adhesive layer,
Any one obtained by thermally polymerizing a mixture of an acid and a diamine, which can be dissolved in a mixed solvent containing an alcohol such as methanol as a main component, can be used. In particular, as a raw material of the polyamide resin, a resin containing a dicarboxylic acid having 36 carbon atoms (so-called “dimer acid”) as a main component (commonly called “dimer acid polyamide”) is preferable. The polyamide resin generally has a high water absorption and thus tends to have a low insulation resistance. However, the use of dimer acid makes it possible to reduce the water absorption and increase the electrical insulation.

【0016】ダイマー酸系ポリアミドは、ダイマー酸と
ジアミンの等モル混合物を熱重合することによって得る
ことができる。ジカルボン酸成分としてダイマー酸だけ
でなく、アゼライン酸、セバシン酸などの他のジカルボ
ン酸を共重合成分として含有していてもかまわない。こ
のときダイマー酸が、酸成分中で70mol%以上であるこ
とがより好ましい。ダイマー酸系ポリアミドの中では、
高重合度のものの方が、吸水率が比較的低く、高湿度の
雰囲気でも電気絶縁性が高くなりやすいので好ましい。
The dimer acid polyamide can be obtained by thermally polymerizing an equimolar mixture of dimer acid and diamine. As the dicarboxylic acid component, not only dimer acid but also other dicarboxylic acids such as azelaic acid and sebacic acid may be contained as copolymer components. At this time, the dimer acid content is more preferably 70 mol% or more in the acid component. Among the dimer acid polyamides,
Those having a high degree of polymerization are preferred because they have a relatively low water absorption rate and tend to have high electrical insulation even in a high humidity atmosphere.

【0017】ジアミン成分としては、ヘキサメチレンジ
アミン、エチレンジアミン、ピペラジン、ビス(4−ア
ミノシクロヘキシル)メタン、ビス(4−アミノ−1,
2−ジメチルシクロヘキシル)メタンなどがあげられる
が、特に好ましいものは、ヘキサメチレンジアミンであ
る。ヘキサメチレンジアミンを主成分としたダイマー酸
系ポリアミドは、総合性能において優れた特性を発揮す
るため特に好ましい。また、ジアミン成分も一種だけで
なく、二種以上混合したものも使用することができる。
As the diamine component, hexamethylenediamine, ethylenediamine, piperazine, bis (4-aminocyclohexyl) methane, bis (4-amino-1,1
Examples thereof include 2-dimethylcyclohexyl) methane, and particularly preferred is hexamethylenediamine. A dimer acid-based polyamide containing hexamethylenediamine as a main component is particularly preferable because it exhibits excellent characteristics in overall performance. Further, not only one kind of diamine component but also a mixture of two or more kinds can be used.

【0018】接着剤層の成分であるエポキシ樹脂として
は、ビスフェノール型、ノボラック型、クレゾールノボ
ラック型、多官能型などの公知のエポキシ樹脂が使用可
能である。
As the epoxy resin which is a component of the adhesive layer, known epoxy resins such as bisphenol type, novolak type, cresol novolak type and polyfunctional type can be used.

【0019】接着剤層の成分であるフェノール樹脂は、
ノボラック型、レゾール型、クレゾールノボラック型の
各種タイプをはじめ、ポリパラビニルフェノールなど公
知のフェノール樹脂が使用可能である。
The phenolic resin, which is a component of the adhesive layer,
Known phenolic resins such as polyparavinylphenol, including various types such as novolak type, resol type and cresol novolak type can be used.

【0020】接着剤層の成分である硬化剤としては、一
般的なエポキシ樹脂用硬化剤が使用可能である。例え
ば、ジアミン、酸無水物、ルイス酸型エポキシ硬化剤な
どである。
As a curing agent which is a component of the adhesive layer, a general curing agent for epoxy resin can be used. For example, diamines, acid anhydrides, Lewis acid type epoxy curing agents, and the like.

【0021】接着剤層中のそれぞれの成分比は、ポリア
ミド樹脂を100重量部とした場合、エポキシ樹脂は3
0〜80重量部の範囲、フェノール系樹脂は20〜70
重量部の範囲から選択される。また、硬化剤は0. 1〜
10重量部の範囲で使用されることが好ましい。
The respective component ratios in the adhesive layer are as follows: when the polyamide resin is 100 parts by weight, the epoxy resin is 3 parts by weight.
0-80 parts by weight, phenolic resin 20-70
It is selected from the range of parts by weight. The curing agent is 0.1 to
It is preferably used in a range of 10 parts by weight.

【0022】上記の各成分を溶媒に溶解することによ
り、接着剤樹脂混合溶液を得る。接着剤各成分を溶解す
る溶媒としては、トルエン、キシレン、クロロベンゼ
ン、ベンジルアルコールなどの芳香族系溶媒、メタノー
ル、エタノール、イソプロピルアルコール、ブチルアル
コールなどのアルコール系溶媒などが、それぞれ単独で
あるいは二種以上の混合溶媒として使用できる。
By dissolving each of the above components in a solvent, an adhesive resin mixed solution is obtained. Solvents for dissolving each component of the adhesive include aromatic solvents such as toluene, xylene, chlorobenzene, and benzyl alcohol, and alcohol solvents such as methanol, ethanol, isopropyl alcohol, and butyl alcohol. Can be used as a mixed solvent.

【0023】本発明では、通常接着剤上に保護フィルム
を積層する。この保護フイルムは、防塵あるいは取り扱
い性の目的から使用されるものである。本発明において
は保護フイルムとして、ポリエチレンテレフタレート、
ポリフェニレンサルファイド、ポリエチレン、ポリプロ
ピレンなどが使用可能である。なかでも、ポリエチレン
テレフタレートおよびポリフェニレンサルファイドは、
引張り弾性率、引張り伸度がパンチングに適しており、
シャープなホール断面を形成することができ特に好まし
い。保護フイルムの厚みとしては、10〜100μmの
ものが使用できるが、好ましくは、20〜40μmであ
る。
In the present invention, a protective film is usually laminated on an adhesive. This protective film is used for the purpose of dust prevention or handling. In the present invention, as the protective film, polyethylene terephthalate,
Polyphenylene sulfide, polyethylene, polypropylene and the like can be used. Among them, polyethylene terephthalate and polyphenylene sulfide are
Tensile modulus and tensile elongation are suitable for punching,
It is particularly preferable because a sharp hole cross section can be formed. The thickness of the protective film may be from 10 to 100 μm, but is preferably from 20 to 40 μm.

【0024】TAB用接着剤付きテープは、通常、次に
示すいずれかの方法で作られる。
A tape with an adhesive for TAB is usually produced by any of the following methods.

【0025】まず、第1の離型フイルムに、接着剤樹脂
混合溶液を塗布、乾燥し、これに必要に応じ第2の離型
フイルムを張り合わせる。次に、目的とする幅にスリッ
トする。これをあらかじめ目的の幅にスリットされたポ
リイミドなどの可撓性絶縁フイルムに、第1もしくは第
2の離型フイルムを剥がして接着剤面を張り合わせる。
また、別の方法として、可撓性絶縁フイルムに、直接、
所定の幅に接着剤樹脂混合溶液を塗布、乾燥し、離型フ
イルム(保護フイルム)を張り合わせてもよい。
First, an adhesive resin mixed solution is applied to a first release film, dried, and a second release film is attached to the first release film if necessary. Next, slitting is performed to a target width. The first or second release film is peeled off from a flexible insulating film made of polyimide or the like which has been slit to a desired width in advance, and the adhesive surface is adhered.
As another method, a flexible insulating film is directly
An adhesive resin mixed solution may be applied to a predetermined width, dried, and a release film (protective film) may be attached.

【0026】通常、上記の方法で作られるテープの接着
剤の幅は、スプロケット孔開孔予定部にはかからないよ
うに基材である可撓性絶縁フイルムより狭く設定されて
いる。
Usually, the width of the adhesive of the tape produced by the above method is set to be narrower than that of the flexible insulating film as the base material so as not to cover the portion where the sprocket holes are to be formed.

【0027】本発明におけるTAB用接着剤付きテープ
は、水分率が0. 4〜0. 8%、好ましくは0. 5〜
0. 7%、さらに好ましくは0. 6〜0. 7%の範囲で
調整した後に上記TABテープ製造工程を経てTABテ
ープが作られる。水分率が0.4%よりも小さいTAB
用接着剤付きテープを用いると、銅箔との膨張率の差か
らTABテープがうねりを発生し、実装の時にピッチず
れとなるので好ましくない。水分率が0. 8%よりも大
きいTAB用接着剤付きテープを用いると、TABテー
プが反りを発生し、実装の時にピッチずれ、導体はがれ
などの不良を起こすために好ましくない。水分率の調整
方法は特に限定されないが、例えば、TAB用テープの
雰囲気湿度を調整することにより行う。すなわち、必要
に応じて加湿または乾燥させることにより調整する。
The TAB adhesive tape according to the present invention has a moisture content of 0.4 to 0.8%, preferably 0.5 to 0.8%.
After adjusting to 0.7%, more preferably 0.6 to 0.7%, a TAB tape is produced through the above TAB tape manufacturing process. TAB with water content less than 0.4%
When a tape with an adhesive for use is used, the TAB tape undulates due to a difference in expansion coefficient from the copper foil, and pitch shift occurs during mounting, which is not preferable. It is not preferable to use a tape with an adhesive for TAB having a water content of more than 0.8%, since the TAB tape will be warped, causing a pitch shift during mounting and defects such as peeling of the conductor. The method for adjusting the moisture content is not particularly limited, but is adjusted, for example, by adjusting the atmospheric humidity of the TAB tape. That is, it is adjusted by humidification or drying as needed.

【0028】なお、水分率とは少なくとも絶縁フイルム
上に接着剤層を積層したTAB用接着剤付きテープにお
いてのものである。水分率の測定は以下のようにして行
う。すなわち、TAB用接着剤付きテープ約1mの重量
(A)を測定し、このテープを真空乾燥機内に2日間放置
し、その後に重量(B)を測定し、(1)式により水分率
を算出する。 (A−B)/B×100=水分率(%)‥‥‥‥‥‥‥(1)
[0028] The water content refers to at least a tape with an adhesive for TAB in which an adhesive layer is laminated on an insulating film. The measurement of the moisture content is performed as follows. That is, the weight of about 1m of TAB adhesive tape
(A) is measured, this tape is left in a vacuum dryer for 2 days, and then the weight (B) is measured, and the moisture content is calculated by the formula (1). (A−B) / B × 100 = moisture percentage (%) ‥‥‥‥‥‥‥ (1)

【0029】IC搭載用のTABテープは、上記TAB
用接着剤付きテープを使用して、概略次の工程を経て作
られ、かくして得られたTABテープにICが搭載され
る。
The TAB tape for mounting the IC is the above-mentioned TAB tape.
An IC is mounted on the TAB tape obtained through the following steps using a tape with an adhesive.

【0030】 (1)スプロケット穴、デバイス穴などのパンチング工程 (2)保護フイルム除去、銅箔ラミネート工程 (3)接着剤加熱キュア工程 (4)フォトレジスト塗布、パターン露光、現像工程 (5)銅箔パターンエッチング工程 (6)フォトレジスト剥離工程 (7)(必要によりソルダーレジスト塗布工程) (8)メッキ工程(スズ、半田、金など)(1) Punching process for sprocket holes, device holes, etc. (2) Removal of protective film, copper foil laminating process (3) Adhesive heating curing process (4) Photoresist coating, pattern exposure, developing process (5) Copper Foil pattern etching process (6) Photoresist stripping process (7) (Solder resist coating process if necessary) (8) Plating process (tin, solder, gold, etc.)

【0031】[0031]

【実施例】以下、実施例により本発明の内容を詳細に説
明する。
EXAMPLES The contents of the present invention will be described in detail below with reference to examples.

【0032】なお、本実施例における各試験は次のよう
にして行った。
Each test in this example was performed as follows.

【0033】[水分率測定法]TAB用接着剤付きテー
プ約1mの重量(A)を測定した。このテープを真空乾
燥機内に2日間放置し、その後に重量(B)を測定し
た。(1)式により水分率を算出した。 (A−B)/B×100=水分率(%)‥‥‥‥‥‥‥(1)
[Moisture Retention Measuring Method] The weight (A) of about 1 m of the tape with an adhesive for TAB was measured. The tape was left in a vacuum dryer for 2 days, after which the weight (B) was measured. The moisture percentage was calculated by the equation (1). (A−B) / B × 100 = moisture percentage (%) ‥‥‥‥‥‥‥ (1)

【0034】[反り検査法]TAB用接着剤付きテープ
を用いて、常法により、パンチング工程、保護フイルム
除去、 銅箔ラミネート工程、接着剤加熱キュア工程まで
行った。そして該テープの幅35mm、長さ120mmの試
験片を作成し、中央部および対角部の反り量を測定し、
それぞれの平均値を反り量とした。
[Warpage Inspection Method] Using a tape with an adhesive for TAB, a punching step, removal of a protective film, a copper foil laminating step, and an adhesive heating curing step were carried out in a conventional manner. Then, a test piece having a width of 35 mm and a length of 120 mm of the tape was prepared, and the warpage of the central portion and the diagonal portion was measured.
The average value of each was defined as the amount of warpage.

【0035】[うねり検査法]TAB用接着剤付きテー
プを用いて、常法により、パンチング工程、保護フイル
ム除去、 銅箔ラミネート工程、接着剤加熱キュア工程ま
で行った。そして該テープの幅35mm、長さ120mmの
試験片を作成し、端部の波打ち状のうねりの有無を観察
した。
[Waviness Inspection Method] Using a tape with an adhesive for TAB, a punching step, removal of a protective film, a copper foil laminating step, and an adhesive heating curing step were carried out in a conventional manner. Then, a test piece having a width of 35 mm and a length of 120 mm of the tape was prepared, and the presence or absence of wavy undulation at the end was observed.

【0036】実施例1 下記接着剤組成物を固形分濃度20重量%となるように
メタノール/モノクロルベンゼン混合溶液に溶解した
後、離型処理を施した厚さ25μmのポリエチレンテレ
フタレートフイルムに、乾燥膜厚が18μmとなるよう
に塗布し、エアオーブンを使用し100℃で1分、15
0℃で2分乾燥した。該フイルムの接着面を厚さ75μ
mのポリイミドフイルム(宇部興産製“ユーピレック
ス”75S)にロールラミネート方式により、120℃
の温度で張り合わせて、TAB用接着剤付きテープを作
成した。
Example 1 The following adhesive composition was dissolved in a mixed solution of methanol / monochlorobenzene so as to have a solid concentration of 20% by weight, and then subjected to a release treatment to form a 25 μm-thick polyethylene terephthalate film on a dry film. Apply to a thickness of 18 μm and use an air oven at 100 ° C. for 1 minute, 15
Dry at 0 ° C. for 2 minutes. The adhesive surface of the film has a thickness of 75μ.
m polyimide film ("UPILEX" 75S manufactured by Ube Industries, Ltd.) at 120 ° C. by roll lamination.
To produce a tape with an adhesive for TAB.

【0037】<接着剤組成> ポリアミド樹脂:100重量部 (ヘンケル社製ナイロン“MACROMELT”690
1) 熱硬化型アルキルフェノール樹脂: 75重量部 (大日本インキ社製TD−2625)
<Adhesive composition> Polyamide resin: 100 parts by weight (Nylon "MACROMELT" 690 manufactured by Henkel)
1) Thermosetting alkylphenol resin: 75 parts by weight (TD-2625 manufactured by Dainippon Ink and Chemicals, Inc.)

【0038】上記で得られたTAB用接着剤付きテープ
を23℃、 55%RH中に2日間放置し、水分率0.67
%のTAB用テープを得た。得られたTAB用接着剤付
きテープの水分率、反り、うねりの測定結果を表1に示
した。
The tape with an adhesive for TAB obtained above was allowed to stand at 23 ° C. and 55% RH for 2 days to obtain a water content of 0.67.
% Of TAB tape was obtained. Table 1 shows the measurement results of the water content, warpage, and waviness of the obtained tape with an adhesive for TAB.

【0039】得られたTAB用接着剤付きテープに18
μmの電解銅箔を、140℃、0.1MPaの条件でラ
ミネートした。続いてエアオーブン中で、80℃、3時
間、100℃、5時間、150℃、5時間の順次加熱処
理を行ない、銅箔付きTAB用テープを作成した。 得
られた銅箔付きTAB用テープの銅箔面に常法によりフ
ォトレジスト膜形成、エッチング、レジスト剥離を行な
い、半導体集積回路接続用の導体回路を形成し、図1に
示すパターンテープを得た。
The obtained tape with an adhesive for TAB is 18
A μm electrolytic copper foil was laminated under the conditions of 140 ° C. and 0.1 MPa. Subsequently, in an air oven, heat treatment was sequentially performed at 80 ° C., 3 hours, 100 ° C., 5 hours, 150 ° C., and 5 hours to prepare a TAB tape with a copper foil. A photoresist film was formed, etched, and stripped of the resist on the copper foil surface of the TAB tape with copper foil by a conventional method to form a conductor circuit for connecting a semiconductor integrated circuit, and the pattern tape shown in FIG. 1 was obtained. .

【0040】さらにこのパターンテープを用いて、45
0℃,1分の条件でインナーリードボンディングを行な
い、半導体集積回路を接続した。しかるのちに、エポキ
シ系液状封止剤(北陸塗料(株)製“チップコート”1
320−617)で樹脂封止を行ない、半導体装置を得
た。図2は得られた半導体装置の断面を示したものであ
る。
Further, using this pattern tape, 45
Inner lead bonding was performed at 0 ° C. for 1 minute to connect a semiconductor integrated circuit. After that, an epoxy-based liquid sealant ("Hitariku Paint Co., Ltd." Chipcoat "1
320-617), resin sealing was performed to obtain a semiconductor device. FIG. 2 shows a cross section of the obtained semiconductor device.

【0041】実施例2 TAB用接着剤付きテープの放置条件を23℃、 40%
RH、 2日間処理とすること以外は、実施例1と全く同様
にして水分率0.59%のTAB用接着剤付きテープを
得た。得られたTAB用接着剤付きテープの水分率、反
り、うねりの測定結果を表1に示した。
Example 2 TAB adhesive tape was left at 23 ° C. and 40%
A tape with a TAB adhesive having a water content of 0.59% was obtained in the same manner as in Example 1 except that the treatment was carried out at RH for 2 days. Table 1 shows the measurement results of the water content, warpage, and waviness of the obtained tape with an adhesive for TAB.

【0042】比較例1 TAB用接着剤付きテープの放置条件を真空乾燥12時
間処理すること以外は、実施例1と全く同様にして水分
率0.14%のTAB用接着剤付きテープを得た。得ら
れたTAB用接着剤付きテープの水分率、反り、うねり
の測定結果を表1に示した。
Comparative Example 1 A TAB adhesive tape having a water content of 0.14% was obtained in the same manner as in Example 1, except that the TAB adhesive tape was left under vacuum drying for 12 hours. . Table 1 shows the measurement results of the water content, warpage, and waviness of the obtained tape with an adhesive for TAB.

【0043】比較例2 TAB用接着剤付きテープの放置条件を23℃、 90%
RH、 2日間とすること以外は、実施例1と全く全く同様
にして水分率1.21%のTAB用接着剤付きテープを
得た。得られたTAB用接着剤付きテープの水分率、反
り、うねりの測定結果を表1に示した。
COMPARATIVE EXAMPLE 2 A tape with an adhesive for TAB was left at 23 ° C. and 90%
A tape with a TAB adhesive having a water content of 1.21% was obtained in exactly the same manner as in Example 1 except that the RH was changed to 2 days. Table 1 shows the measurement results of the water content, warpage, and waviness of the obtained tape with an adhesive for TAB.

【0044】[0044]

【表1】 [Table 1]

【0045】[0045]

【発明の効果】本発明によれば、TABテープの加工工
程において、反りやうねりにより実装時にピッチずれ等
の問題が生じることなく、TABテープの歩留まり低下
の問題を発生することなく高歩留まりで製造でき、高性
能で良品のTABテープを得ることができる。
According to the present invention, the TAB tape can be manufactured at a high yield without any problem such as a pitch shift at the time of mounting due to warpage or undulation in a processing step of the TAB tape and without a problem of a decrease in the yield of the TAB tape. It is possible to obtain a high-performance and good-quality TAB tape.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のTAB用接着剤付きテープを加工して
得られた、半導体集積回路搭載前のパターンテープの一
態様の斜視図。
FIG. 1 is a perspective view of one embodiment of a pattern tape before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for TAB of the present invention.

【図2】本発明のTAB用接着剤付きテープを用いた半
導体装置の一態様の断面図。
FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device using the tape with an adhesive for TAB of the present invention.

【図3】本発明のTAB用接着剤付きテープを用いた半
導体装置(BGA)の一態様の断面図。
FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for TAB of the present invention.

【図4】本発明のTAB用接着剤付きテープを用いた半
導体装置(CSP)の一態様の断面図。
FIG. 4 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for TAB of the present invention.

【符号の説明】[Explanation of symbols]

1 可撓性を有する絶縁性フィルム 2,13,21 接着剤 3 スプロケット孔 4 デバイス孔 5,14,22 半導体集積回路接続用の導体 6 インナーリード部 7 アウターリード部 8,15,23 半導体集積回路 9,16,24 封止樹脂 10,17,25.金バンプ 11 保護膜 18,26 ハンダボール 19 補強板 27 ソルダーレジスト DESCRIPTION OF SYMBOLS 1 Insulating film which has flexibility 2,13,21 Adhesive 3 Sprocket hole 4 Device hole 5,14,22 Conductor for connecting a semiconductor integrated circuit 6 Inner lead part 7 Outer lead part 8,15,23 Semiconductor integrated circuit 9, 16, 24 sealing resin 10, 17, 25. Gold bump 11 Protective film 18, 26 Solder ball 19 Reinforcement plate 27 Solder resist

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】少なくとも絶縁フイルム上に接着剤層を積
層したTAB用接着剤付きテープにおいて、該テープの
水分率が0. 4〜0. 8%の範囲であることを特徴とす
るTAB用接着剤付きテープ。
1. An adhesive tape for TAB having an adhesive layer laminated on at least an insulating film, wherein the water content of the tape is in the range of 0.4 to 0.8%. Tape with agent.
【請求項2】絶縁フイルムがポリイミドフイルムである
ことを特徴とする請求項1記載のTAB用接着剤付きテ
ープ。
2. The tape with an adhesive for TAB according to claim 1, wherein the insulating film is a polyimide film.
【請求項3】接着剤層がポリアミド樹脂およびフェノー
ル樹脂を含有することを特徴とする請求項1記載のTA
B用接着剤付きテープ。
3. The TA according to claim 1, wherein the adhesive layer contains a polyamide resin and a phenol resin.
Tape with adhesive for B.
【請求項4】ポリアミド樹脂が炭素数36のジカルボン
酸を構成成分として含有することを特徴とする請求項3
記載のTAB用接着剤付きテープ。
4. A polyamide resin containing a dicarboxylic acid having 36 carbon atoms as a constituent component.
The adhesive tape for TAB according to the above.
【請求項5】請求項1〜4のいずれかに記載のTAB用
接着剤付きテープを用いたTABテープ。
5. A TAB tape using the tape with an adhesive for TAB according to claim 1.
【請求項6】請求項1〜4のいずれかに記載のTAB用
接着剤付きテープを用いた半導体装置。
6. A semiconductor device using the tape with an adhesive for TAB according to claim 1.
JP26201296A 1996-10-02 1996-10-02 TAB tape manufacturing method Expired - Lifetime JP4168456B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26201296A JP4168456B2 (en) 1996-10-02 1996-10-02 TAB tape manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26201296A JP4168456B2 (en) 1996-10-02 1996-10-02 TAB tape manufacturing method

Publications (2)

Publication Number Publication Date
JPH10107092A true JPH10107092A (en) 1998-04-24
JP4168456B2 JP4168456B2 (en) 2008-10-22

Family

ID=17369801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26201296A Expired - Lifetime JP4168456B2 (en) 1996-10-02 1996-10-02 TAB tape manufacturing method

Country Status (1)

Country Link
JP (1) JP4168456B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010110062A1 (en) * 2009-03-27 2010-09-30 日鉱金属株式会社 Flexible substrate and process for production thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010110062A1 (en) * 2009-03-27 2010-09-30 日鉱金属株式会社 Flexible substrate and process for production thereof
JPWO2010110062A1 (en) * 2009-03-27 2012-09-27 Jx日鉱日石金属株式会社 Flexible substrate and manufacturing method thereof

Also Published As

Publication number Publication date
JP4168456B2 (en) 2008-10-22

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