JP2007116134A - Tape for semiconductor, adhesive tape for semiconductor, substrate for connecting semiconductor integrated circuits, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a novel tape for semiconductor with excellent insulation reliability, long-term adhesion durability and workability, and provide an adhesive tape for semiconductor, a substrate for connecting semiconductor integrated circuits, and a semiconductor device. <P>SOLUTION: A tape for semiconductor has: an organic insulating film layer containing inorganic particles and having the thermal conductivity of the organic insulating film of 0.4 to 120 W/mK; and a conductor layer. An adhesive tape for semiconductor has: the organic insulating film containing the inorganic particles and having the thermal conductivity of 0.4 to 120 W/mK; and an adhesive layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor tape, a tape with a semiconductor adhesive, a substrate for connecting a semiconductor integrated circuit, and a semiconductor device. More specifically, the present invention is for producing a semiconductor connection substrate such as a chip-on flexible printed circuit board (COF) or a ball grid array (BGA) package interposer used for mounting a semiconductor integrated circuit. Suitable tapes for adhesive bonding for semiconductors using adhesives suitable for making tape automated bonding (TAB) tape, coverlay, lead frame fixing tape, LOC fixing tape, reinforcing plate tape, etc., copper-clad The present invention relates to a semiconductor tape such as a laminated plate, a substrate for connecting a semiconductor integrated circuit using the tape, and a semiconductor device.

  Conventionally, a method using a metal lead frame has been most often used for mounting a semiconductor integrated circuit (IC). However, in recent years, it has been used for IC connection on an organic insulating film such as glass epoxy or polyimide. There are an increasing number of systems through which a conductive pattern is formed via a connection substrate.

  As a typical method for connecting a substrate for connecting a semiconductor integrated circuit, a TAB method can be cited. A tape with an adhesive used therefor is referred to as a TAB tape.

  As an example using a TAB tape, FIG. 1 is a cross-sectional view of one embodiment of a ball grid array (BGA) type semiconductor device using a tape with a semiconductor adhesive, and FIG. 2 is a conventional semiconductor adhesive. 1 is a cross-sectional view of one embodiment of a chip scale package (CSP) type semiconductor device using a tape.

  In the semiconductor device shown in FIG. 1, a semiconductor integrated circuit 15 and solder balls 18 are provided on an organic insulating film 12 via an adhesive layer 13 and leads 14, and a stiffener (reinforcement) is provided on the opposite surface of the organic insulating film 12. A plate 19 is provided, and the lead 14 and the semiconductor integrated circuit 15 are connected via a gold bump 17 and covered with a sealing resin 16.

  In the semiconductor device shown in FIG. 2, a lead 22, a solder ball 26, a solder resist 27, and a sealing resin 24 are provided on an organic insulating film 20 via an adhesive layer 21. A semiconductor integrated circuit 23 is connected.

  On the other hand, since the TAB method is a method of bonding in a lump (gang bonding), when connecting an IC chip and an inner lead, bonding can be performed in a shorter time than other connection methods, which is advantageous in terms of cost. It is also applied to a process of laminating a copper foil after mechanically punching a hole for a ball or a device hole for an IC.

  A TAB tape is generally used for a semiconductor integrated circuit connection substrate of a tape carrier package (TCP). An ordinary TAB tape has a three-layer structure in which an uncured adhesive layer and a protective film layer such as a polyester film having releasability are laminated on a flexible organic insulating film such as a polyimide film. It consists of

  TAB tape consists of (1) sprocket and device hole drilling, (2) thermal lamination with copper foil, (3) pattern formation (resist application, etching, resist removal), and (4) tin or gold-plating treatment It is processed into a substrate for connecting a semiconductor integrated circuit through processing steps such as.

  FIG. 3 shows an example of the shape of the semiconductor integrated circuit connection substrate before mounting the semiconductor integrated circuit. FIG. 3 is a perspective view of a substrate for connecting a semiconductor integrated circuit before mounting the semiconductor integrated circuit. An adhesive layer 2 and leads 5 are arranged on the organic insulating film 1, and the organic insulating film 1 has an organic insulation. A sprocket hole 3 for feeding the conductive film 1 and a device hole 4 for installing the device are provided.

  FIG. 4 is a cross-sectional view showing an embodiment of a semiconductor device using the semiconductor integrated circuit connection substrate of FIG. In FIG. 4, a lead 5 having an inner lead portion 6 and an outer lead portion 7 fixed on an organic insulating film 1 via an adhesive layer 2 is disposed on a semiconductor integrated circuit connection substrate. The inner lead portion 6 of the substrate for connecting a semiconductor integrated circuit is thermocompression bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 having the protective film 11 to mount the semiconductor integrated circuit 8. Next, a semiconductor device is manufactured through a resin sealing step using the sealing resin 9. In addition, a method of connecting the leads 5 of the semiconductor integrated circuit connection substrate and the gold bumps 10 of the semiconductor integrated circuit 8 by wire bonding without using the inner lead portion 6 is also employed. Such a semiconductor device is referred to as a tape carrier package (TCP) type semiconductor device. Finally, the TCP type semiconductor device is connected (outer lead bonding) to a circuit board, a glass substrate or the like on which other components are mounted by the outer lead portion 7.

  As electronic devices become smaller and higher in density, the conductor width and distance between conductors in the TAB method have become very narrow, and particularly in the area finer than the 35 μm pitch, the technical limit in the TAB method has been reached. It has become apparent. Accordingly, the COF method using a flexible printed circuit board (FPC), which is advantageous for miniaturization, has recently been expanded. The FPC includes a three-layer FPC having an adhesive layer and a two-layer FPC having no adhesive layer and having a conductive pattern formed directly on the organic insulating film layer. FIG. 5 illustrates a semiconductor device mounted by COF using a two-layer FPC. The two-layer FPC is composed of an organic insulating film 28 and leads 31. As an example of COF mounting, a method in which a semiconductor integrated circuit 29 and an FPC lead 31 are connected by a flip chip (FC) is used. Yes. Representative examples of the two-layer FPC include a plating method in which an organic insulating film is directly surface-treated with metal atoms, a casting method in which a thermosetting polyimide resin is applied to a metal foil layer and heat-cured.

  The COF method is advantageous over the TAB method in that a flying lead for a device hole is unnecessary and lead deformation due to miniaturization of the conductor width does not occur. Further, unlike the TAB method, the mounting process does not require drilling of device holes and thermal lamination with a copper foil, which is advantageous in terms of labor saving.

  In recent years, high power and high frequency have been promoted in large size and high performance device applications. Along with this, performance degradation of various devices due to heat storage of semiconductor integrated circuits has been highlighted, and heat dissipation measures have become one of the major issues.

  A specific problem will be exemplified for a semiconductor integrated circuit connected to a TAB tape. Due to the heat generated from the semiconductor integrated circuit, the temperature of the adhesive layer of the TAB tape rises through the circuit pattern and the deterioration of the adhesive layer is promoted, so that the adhesive layer and the conductor pattern are peeled off. Further, as the temperature of the adhesive layer increases, the surface resistivity between the conductor patterns also decreases, and the insulation properties decrease. In recent years, as electronic devices have become smaller and more dense, conductor widths and distances between conductors have become very narrow. Therefore, the effect of TAB tape on temperature and adhesiveness is greatly affected. It has become to.

  As a heat dissipation measure for solving these problems, for example, a method of attaching a heat dissipation plate to a resin-sealed portion of a TAB package (see, for example, Patent Document 1), a heat dissipation surface on a resin-sealed resin surface of a TAB package Various methods have been proposed, such as a method for attaching fins (see, for example, Patent Document 2) and a method for enhancing the cooling effect by introducing a water cooling line. In this respect, it is not preferable, and a new heat dissipation technique is required.

Moreover, the aromatic polyimide film with an adhesive using the aromatic polyimide film containing an inorganic filler is proposed (for example, refer patent document 3). This method is intended to reduce warpage, and the heat dissipation effect is insufficient. Moreover, although the metal thin film laminated film (for example, refer patent document 4) using the polybenzoazole film of high heat conductivity is proposed, since an elastic modulus is small, sufficient punching property is not obtained.
JP-A-5-55411 (Claim 1) JP-A-6-21268 (Claim 2) JP 2000-198969 A (Claim 3) JP-A-11-207866 (Claim 1)

  An object of the present invention is to provide a novel semiconductor tape, semiconductor adhesive tape, semiconductor integrated circuit connecting substrate, and semiconductor device that are excellent in insulation reliability, long-term adhesion durability, and workability. .

  In order to solve the above problems, a semiconductor tape of the present invention is a semiconductor tape having an organic insulating film layer and a conductor layer, the organic insulating film layer containing inorganic particles, and A semiconductor tape characterized in that the organic insulating film layer has a thermal conductivity of 0.4 to 120 W / mK. The tape with an adhesive for a semiconductor of the present invention is a tape with an adhesive for a semiconductor having an organic insulating film layer and an adhesive layer, and the thermal conductivity of the organic insulating film layer is 0.4 to 120 W. / MK is a tape with an adhesive for semiconductors.

  ADVANTAGE OF THE INVENTION According to this invention, the novel tape for semiconductors excellent in insulation reliability, long-term adhesion durability, and workability and the tape with an adhesive for semiconductors are obtained. By using these tapes, a semiconductor integrated circuit connecting substrate for high-density mounting and a copper-clad laminate and a semiconductor device using the substrate can be advantageously produced industrially, and the reliability of the obtained semiconductor device can be improved. Can be improved.

  Hereinafter, the present invention will be described in detail.

  The semiconductor tape of the present invention mainly has the following configuration in order to achieve the above problems. That is, a semiconductor tape having an organic insulating film layer and a conductor layer, the organic insulating film layer containing inorganic particles, and the thermal conductivity of the organic insulating film layer is 0.4 to It is a tape for semiconductor characterized by being 120 W / mK. The tape with a semiconductor adhesive of the present invention is a tape with a semiconductor adhesive having an organic insulating film layer and a conductor layer, and the thermal conductivity of the organic insulating film layer is 0.4 to 120 W / It is a tape with an adhesive for semiconductor, which is mK.

The heat conductivity here is a value indicating the ease of heat conduction of a substance. The amount of heat flowing in a unit time through a unit area perpendicular to the heat flow is expressed as a temperature difference per unit length (temperature). It is defined as the value divided by (gradient). The following formula is mentioned as a calculation method.
Thermal conductivity (W / mK) = thermal diffusivity (m ² / s) × heat capacity (J / m ³ K)
Here, the thermal diffusivity can be measured by a laser flash method, the heat capacity can be calculated as the product of density and specific heat, the density can be measured by the Archimedes method, and the specific heat can be measured by DSC (differential scanning calorimeter).

  Under certain environmental conditions, the effect of the temperature rise of the tape is different when a current is applied to the semiconductor tape as compared to when it is not. That is, when an electric current is applied to the conductor layer, heat is generated, and the temperature rise of the semiconductor tape is promoted. Furthermore, since heat is transferred to the conductor layer due to heat generated by the semiconductor integrated circuit, heat is stored in the conductor layer. As a result, the surface resistivity between the conductors is lowered, which is not preferable in terms of insulation reliability. The same applies to tapes with adhesives for semiconductors. In addition, when the temperature of the tape with adhesive for semiconductor increases, it may cause deterioration of the adhesive layer.

  When the thermal conductivity of the organic insulating film layer is 0.4 W / mK or more, the heat accumulated in the semiconductor tape can be efficiently diffused from the back surface of the tape, so that an increase in the tape temperature can be suppressed, and the resistance The value is stabilized and the insulation reliability is improved. On the other hand, when it exceeds 120 W / mK, when the semiconductor integrated circuit is connected to the conductor pattern, the heat from the heating tool of the connecting device (bonder) diffuses to the semiconductor tape through the conductor, so that the heat is efficiently transmitted to the connecting surface. Therefore, a connection failure between the semiconductor integrated circuit and the conductor layer occurs.

  In the present invention, the thermal conductivity of the organic insulating film layer is required to be 0.4 to 120 W / mK, preferably 1 to 80 W / mK, and more preferably 3 to 50 W / mK.

  The organic insulating film layer used in the present invention preferably has flexibility, for example, a so-called heat resistant film such as polyimide, polyetherimide, aromatic polyamide, liquid crystal film, or flexible epoxy / glass cloth. Preferably, the composite material is used. In particular, a polyimide film is preferably used from the viewpoint of thermal dimensional stability.

  In the present invention, the organic insulating film layer may have any composition as long as it satisfies the above conditions of thermal conductivity, but preferably contains inorganic particles as its component.

  In order to set the thermal conductivity of the organic insulating film layer to 0.4 to 120 W / mK, the content of inorganic particles is preferably 6% by weight or more of the entire organic insulating film layer. More preferably, it is 8 weight% or more, More preferably, it is 10 weight% or more. In addition, if the content of inorganic particles is 25% by weight or less, the flexibility of the organic insulating film is not impaired. For example, sprockets and device holes drilled in punching of TAB tape and COF tape (punching) ) Can suppress the generation of cracks based on the organic insulating film. More preferably, it is 23 weight% or less, More preferably, it is 20 weight% or less.

  Moreover, it is preferable that the average particle diameter (a particle size is a particle size of a primary particle. The following is same) of an inorganic particle is the range of 0.002-1 micrometer. Here, an average particle diameter shows the average particle diameter calculated | required on the volume basis. If the average particle diameter of the inorganic particles is 1 μm or less, the organic insulating film can suppress the generation of surface irregularities due to inorganic particle defects (pinholes) and maintain smoothness. Moreover, if it is 0.002 micrometer or more, the handleability of an inorganic particle will be easy, and since the coarsening of the particle | grains by secondary aggregation can be suppressed, a particle size can be controlled easily. Furthermore, it is preferable that the particle size distribution of the inorganic particles has a maximum value in each range of 0.3 to 1 μm and 0.002 to 0.1 μm. Since inorganic particles having a particle diameter of 0.002 to 0.1 μm do not impair the transparency of the organic insulating film, a device for connecting a semiconductor integrated circuit using the transparency of the organic insulating film layer (for example, a TAB bonder) ), And there is little variation in alignment when connecting semiconductor integrated circuits. In addition, since inorganic particles having a particle size of 0.3 to 1 μm are excellent in dispersion stability, it is easy to suppress coarsening of the particles.

  Examples of the inorganic particles include silica, alumina, titania, zirconia, barium titanate, calcium titanate, lead titanate, aluminum hydroxide, magnesium hydroxide, magnesium hydroxide, aluminum carbonate, calcium carbonate, magnesium carbonate, calcium silicate. , Magnesium silicate, aluminum silicate, calcium phosphate, calcium phosphate, silicon nitride, boron nitride, aluminum nitride, titanium nitride, silicon carbide, magnesium oxide, zinc oxide, potassium zirconate, lead zirconate, beryllium oxide, carbon nanotube, fullerene, Examples thereof include carbon nanoballoons, diamond-like carbon, and carbon black.

  The method for producing the organic insulating film used in the present invention will be described by taking a polyimide film as an example. It can be produced by a method in which a solution of an organic solvent in which inorganic particles are dispersed in polyamic acid, which is a polyimide precursor, is cast on a support such as a stainless drum, dried and imidized. As a raw material for the polyamic acid, a material obtained by dissolving at least one kind of aromatic dianhydride and diamine in an equimolar amount of an organic solvent is usually used.

  For example, as the aromatic dianhydride, pyromellitic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 3,3 ′, 4,4′-biphenylcarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenylcarboxylic dianhydride, 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride 2,2-bis (3,4-dicarboxylphenyl) propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-di Carboxyphenyl) ethane dianhydride, oxydiphthalic acid dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, p-phenylenebis (trimellitic acid monoester acid anhydride), ethylenebis (trimellitic acid) Acid monoester acid anhydride), bisphenol A bis (trimellitic acid monoester acid anhydride), 3,4,9,10-perylenetetracarboxylic dianhydride and derivatives thereof.

  Examples of diamines include 4,4′-oxydianiline, 4,4′-diaminodiphenylpropane, 4,4′-diaminodiphenylmethane, benzidine, 3,3′-dichlorobenzidine, 4,4′-diaminodiphenyl sulfide, 3 , 3′-oxydianiline, 3,4′-oxydianiline, 1,5-diaminonaphthalene, 4,4′-diaminodiphenyldiethylsilane, 4,4′-diaminodiphenylsilane, 4,4′-diaminodiphenyl Ethylphosphine oxide, 4,4′-diaminodiphenyl N-methylamine, 4,4′-diaminodiphenyl N-phenylamine, 3,3′-diaminodiphenyl ether, 3,3′-dimethyl-4,4′-diamino Diphenyl ether, p-phenylenediamine, 4,4'-diaminophenyl ether Le, 3,3'-dimethoxy-4,4'-diaminodiphenyl ether and derivatives thereof.

  The surface roughness of the organic insulating film layer is preferably in the range of 5 to 120 nm. Here, the surface roughness means the ten-point average roughness Rz. If the surface roughness of the organic insulating film layer is 5 nm or more, the adhesive force is improved due to the anchor effect with the adhesive layer, and if it is 120 nm or less, the decrease in the adhesive force due to insufficient embedding of the adhesive layer is suppressed. it can. Furthermore, when the surface roughness of the organic insulating film layer facing the adhesive layer or the conductor layer is R1, and the surface roughness of the opposite surface is R2, R2 / R1 is in the range of 1.2-80. Is preferred. If R2 / R1 is 1.2 or more, the heat transmitted through the conductor layer can be efficiently diffused to the opposite surface, and if it is 80 or less, the heat from the connecting device (bonder) is transferred to the organic insulating film layer. Since excessive diffusion from the back surface can be suppressed, it is possible to control the yield reduction and cost increase of the heating time when the semiconductor integrated circuit is connected to the conductor pattern.

  As a method for controlling the surface roughness of the organic insulating film layer, for example, controlling the surface roughness of the organic insulating film layer by discharge treatment such as corona or plasma, physical polishing by sand blasting, chemical treatment by an oxidizing agent, etc. Can do. These surface treatment methods are preferable not only from the heat dissipation effect but also from the viewpoint of improving the adhesive strength with the adhesive layer.

  Next, the adhesive layer used for the semiconductor tape and the semiconductor-attached tape of the present invention will be described. The adhesive layer contains a thermoplastic resin and / or a thermosetting resin, and can contain various inorganic particles and organic or inorganic components as described below, but to the extent that the object of the present invention is not impaired. Ingredients can also be included.

  The adhesive layer can preferably contain a thermoplastic resin. Examples of the thermoplastic resin include acrylic, silicone, polyimide, phenoxy, polyamide, polyurethane, polyether amide, polyether imide, polyamide imide, polyester, polyether ester amide, polyether ester imide, polyester amide, polyester imide, Examples thereof include polyether sulfone and elastomers such as nitrile rubber and butadiene rubber. In addition, it is preferable to use a thermoplastic resin and a thermosetting resin as described later in combination, but these thermoplastic resins include amino groups, carboxyl groups, thiol groups, phenolic hydroxyl groups, epoxy groups, silanol groups, It preferably has a functional group capable of reacting with a thermosetting resin described later, such as an isocyanate group, a nitrile group, a hydroxyl group, a maleimide group, an ester group, an ether group, or a mercapto group.

  For example, when it is used for a TAB tape, various known polyamide resins can be preferably used as the thermoplastic resin. In particular, those containing dicarboxylic acid having 20 to 50 carbon atoms (so-called dimer acid) as an essential component are preferable in that the adhesive layer can be made flexible, and has low water absorption and excellent insulation. It is. Polyamide resin containing dimer acid can be obtained by polycondensation of dimer acid and diamine by a conventional method. At this time, dicarboxylic acid other than dimer acid, azelaic acid and sebacic acid is contained as a copolymerization component. May be. As diamine, well-known things, such as ethylenediamine, hexamethylenediamine, and piperazine, can be used, and two or more kinds may be mixed from the viewpoint of hygroscopicity and solubility.

  Examples include amino groups, carboxyl groups, thiol groups, phenolic hydroxyl groups, epoxy groups, silanol groups, isocyanate groups, nitrile groups, hydroxyl groups, maleimide groups, ester groups, ether groups, mercapto groups, etc. in the side chain. When a polyamide resin is used, the crosslink density increases due to reaction with other resins, so that a high glass transition temperature (Tg) can be obtained and deterioration at high temperatures can be reduced. Of these, polyamide resins having amino groups or phenolic hydroxyl groups in the side chain are particularly preferred. An amino group is preferable because it has active hydrogen and is a base point for reacting with a thermosetting resin such as an epoxy resin or a phenol resin to form a crosslinked structure. More preferably, it has a phenol group in the side chain, has a phenyl group having excellent heat resistance, and reacts with thermosetting resins having various structures to obtain a dense cross-linked structure. As a result, it has excellent resistance to deterioration at high temperatures, and can be effective in reducing the decrease in the adhesive strength of the adhesive layer. It is preferable to leave the active hydrogen of the amide bond that contributes to adhesion. Examples of such a polyamide resin include a method in which a polycarboxylic acid or a polyamine is copolymerized with the dimer acid and diamine described above, and a phenolic hydroxyl group is introduced into the side chain via the carboxylic acid or amine. For example, a polyamide resin having a phenolic hydroxyl group in the side chain by reacting p-hydroxybenzoic acid with an amino group in the side chain or reacting p-aminophenol, p-hydroxymethylphenol or the like with a carboxyl group in the side chain. Can be synthesized.

  The polyvalent carboxylic acid represents a trivalent or higher carboxylic acid, butane-1,2,4-tricarboxylic acid, cyclohexane-1,2,3 tricarboxylic acid, naphthalene-1,2,4-tricarboxylic acid, butane. Examples include -1,2,3,4-tetracarboxylic acid, 3,3 ′, 4,4′-benzophenone tetracarboxylic acid, and the like. The polyvalent amine indicates a trivalent or higher amine, and examples thereof include diethylenetriamine, 4,4 ', 4 "-triaminotriphenylmethane, and triamterene.

  The polyamide resin having the above functional group in the side chain may be arbitrarily combined with another thermoplastic resin. The content of the polyamide resin having the functional group in the side chain is preferably 5 to 100% by weight, more preferably 10 to 100% by weight, and still more preferably 20 to 100% by weight in the total thermoplastic resin. If it is 5 weight% or more, the inhibitory effect of the adhesive force fall by a high temperature, high humidity process will be acquired.

    The method for introducing a functional group into the side chain in the present invention is not limited to polyamide, and the same can be said for the thermoplastic resin.

  Moreover, when using a dimer acid as said thermoplastic resin, it is preferable to use the polyamide resin whose iodine value of a dimer acid is 20 or less. If the iodine value is 20 or less, adhesion durability and insulation durability in high-temperature and high-humidity treatment can be improved, and the iodine value is more preferably 10 or less, and further preferably 3 or less. The dimer acid described above is obtained by dimerizing unsaturated fatty acids having 10 to 25 carbon atoms, but dimer acids obtained by dimerizing unsaturated fatty acids such as linoleic acid, oleic acid, and linolenic acid are generally used. ing. The dimer acid thus produced contains an unsaturated bond, and the unsaturated bond is likely to be oxidized, which may cause deterioration of the adhesive layer. Therefore, deterioration by oxidation can be suppressed by using a polyamide resin containing dimer acid with reduced unsaturated bonds. In general, the number of unsaturated bonds in a fatty acid is represented by an iodine value, and the smaller the iodine value, the smaller the number of unsaturated bonds. In the present invention, two or more dimer acids having different iodine values may be used. In this case, the iodine value of the mixture is preferably 20 or less. In addition, about a dimer acid with an iodine number of 20 or less, it does not interfere at all to use as a polyamide resin which has an above-mentioned functional group in a side chain, and is a preferable aspect rather.

  As a method for obtaining a dimer acid having an iodine value of 20 or less, for example, it is directly hydrogenated to a dimer acid containing an unsaturated bond group, or a dimer acid is synthesized using a fatty acid having a small number of unsaturated bond groups. And so on.

  In this invention, it is preferable to contain a thermosetting resin in an adhesive bond layer from a heat resistant viewpoint of an adhesive bond layer. Examples of the thermosetting resin include, for example, phenol resin, epoxy resin, urea resin, cyanate resin, maleimide resin, and acetal resin, and it is particularly preferable that epoxy resin or phenol resin is included.

  The phenol resin may be either a resol type or a novolac type resin. For example, a phenol resin having a structure having various substituents such as cresol, tertiary butyl or nonyl other than straight can be used. Further, these phenol resins may be used in combination, or those co-condensed in advance may be used. Further, there is no limitation on the combined use of a resol type and a novolac type resin. The content of the total phenol resin is preferably 5 to 100 parts by weight, more preferably 20 to 70 parts by weight with respect to 100 parts by weight of the thermoplastic resin.

  The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule. For example, diglycidyl ether such as bisphenol F, bisphenol A, bisphenol S, dihydroxynaphthalene, alicyclic type, epoxy And epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylol methane, epoxidized tetraphenylol ethane, and epoxidized metaxylene diamine. Among these, an epoxy resin that is liquid at 25 ° C. is particularly preferable, and low temperature fluidity can be improved. The content of the epoxy resin is preferably 5 to 100 parts by weight and more preferably 20 to 70 parts by weight with respect to 100 parts by weight of the thermoplastic resin.

  In the present invention, the adhesive layer may contain a thermosetting resin curing agent and a curing accelerator. For example, when the thermosetting resin is an epoxy resin or a resol type phenol, an amine complex of boron trifluoride such as aromatic polyamine or boron trifluoride triethylamine complex, 2-alkyl-4-methylimidazole or 2-phenyl- Known compounds such as imidazole derivatives such as 4-alkylimidazole, organic acids such as phthalic anhydride and trimellitic anhydride, dicyandiamide and triphenylphosphine can be used. The content of the curing agent and the curing accelerator is preferably 0.1 to 10 parts by weight with respect to 100 parts by weight of the thermoplastic resin.

  It is preferable to contain inorganic particles in the adhesive layer. Utilizing the thermal conductivity of the inorganic particles, the thermal conductivity of the adhesive layer is increased, and the heat release from the back surface of the organic insulating film layer is promoted.

  The average particle size of the inorganic particles is preferably in the range of 0.002 to 3 μm, more preferably 0.002 to 1 μm. If it is 3 micrometers or less, the smoothness of an adhesive bond layer will not be impaired but the void at the time of bonding copper foil can be suppressed. Moreover, if it is 0.002 micrometer or more, the handleability of an inorganic particle will be easy, and since the coarsening of the particle | grains by secondary aggregation can be suppressed, a particle size can be controlled easily. Furthermore, in the particle size distribution of the inorganic particles, it is preferable to have local maximum values in the respective ranges of 0.3 to 1 μm and 0.002 to 0.1 μm. Since inorganic particles having a particle size of 0.002 to 0.1 μm do not impair the transparency of the organic insulating film, a device for connecting semiconductor integrated circuits using the transparency of the organic insulating film layer (for example, TAB bonder) Therefore, there is little variation in alignment when connecting semiconductor integrated circuits. Moreover, since the inorganic particle with a particle size of 0.3-1 micrometer is excellent in dispersion stability, it is easy to suppress the coarsening of a particle.

Examples of the inorganic particles include silica, alumina, titania, zirconia, barium titanate, calcium titanate, lead titanate, aluminum hydroxide, magnesium hydroxide, magnesium hydroxide, aluminum carbonate, calcium carbonate, magnesium carbonate, calcium silicate. , Magnesium silicate, aluminum silicate, calcium phosphate, calcium phosphate, silicon nitride, boron nitride, aluminum nitride, titanium nitride, silicon carbide, magnesium oxide, zinc oxide, potassium zirconate, lead zirconate, beryllium oxide, carbon nanotube, fullerene, Examples thereof include carbon nanoballoons, diamond-like carbon, and carbon black.

  In addition to the above components, the adhesive layer can contain an organic or inorganic component such as an antioxidant or an ion scavenger as long as the properties of the adhesive are not impaired.

  Next, a semiconductor tape in which a conductor layer is directly provided on an organic insulating film layer, which is one aspect of the present invention, will be described.

  One example is a method in which a metal layer is directly ground on the organic insulating film layer by vapor deposition, and a copper foil layer is stacked by electroplating. Specifically, a conductive metal layer made of nickel, iron, cobalt, copper, tin, palladium, chromium or a compound thereof is formed. Examples of the vapor deposition method include vacuum vapor deposition, sputtering, and ion plating. Among them, sputtering or ion plating is preferable because it can form a film with high energy, has a dense film quality, and has relatively few pinholes. Since the conductive metal layer is subjected to chemical treatment in the next step, it needs to be thick enough to withstand it. If the film thickness is 50 nm or more, high adhesion can be obtained, and if it is 1000 nm or less, the effect of cost increase is small, so the range of 50 to 1000 nm is preferable. Pinholes tend to decrease until the film thickness of the conductive metal layer reaches about 300 nm and become saturated beyond that. The film thickness of the conductive metal layer is optimally in the range of 300 to 500 nm.

  Next, the conductive metal layer is adsorbed to the portion where the conductive metal is not deposited and the organic insulating film layer is exposed, preferably by a chemical method using an aqueous solution. For example, the conductive metal layer is treated with a pretreatment degreasing solution containing a surfactant, and then the exposed film surface at the pinhole portion is activated in a chemical solution such as an aqueous solution of caustic soda to wet 72 dyne or more. Be in a state where it can be secured. Thereafter, a conductive metal layer such as paradium or a compound of paradium and tin is adsorbed. The thickness of the conductive metal layer is preferably 0.01 to 0.10 Ω / cm in terms of the surface resistance after drying in consideration of electrolytic copper plating.

  In the case of a three-layer FPC tape having an adhesive layer between the organic insulating film and the conductor layer, the above-described thermoplastic resin, thermosetting resin, additive, etc. are mixed, and the paint dissolved in the solvent is organically insulated. The conductive film layer is coated, dried at a temperature of 100 to 200 ° C., and laminated using a copper foil having a thickness of 5 to 50 μm. Lamination conditions are preferably a temperature of 100 to 160 ° C. and a pressure of 0.1 to 0.3 MPa. Next, it is preferable to perform step heating, and it is preferable to cure the adhesive layer by finally raising the temperature to 150 to 180 ° C. while gradually raising the temperature from a relatively low temperature region of 50 to 90 ° C.

  A method for producing a TAB tape will be described as an example of a tape with an adhesive. The above-mentioned thermoplastic resin, thermosetting resin, additive, etc. are mixed, and the paint dissolved in the solvent is applied to the protective film that has been subjected to the release treatment with a bar coater, and dried at a temperature of 100 to 200 ° C., The organic insulating film layer is laminated at a temperature of 100 to 160 ° C. and a pressure of 0.1 to 0.3 MPa to produce a tape with an adhesive.

  The semiconductor tape or semiconductor adhesive tape of the present invention is a substrate for connecting a semiconductor integrated circuit such as an FPC or TAB pattern tape used in the COF method or a BGA package interposer as shown in FIG. It is preferably used for manufacturing a semiconductor device using a film-shaped adhesive such as a die bonding material, a lead frame fixing tape, a LOC tape, and an interlayer adhesive sheet of a multilayer substrate, and particularly a TCP type as shown in FIG. It can be preferably used for a semiconductor device, a BGA type semiconductor device as shown in FIG. 1, and a CSP type semiconductor device as shown in FIG.

  A substrate for connecting a semiconductor integrated circuit according to the present invention uses the above-mentioned tape with an adhesive for a semiconductor, and a semiconductor device according to the present invention uses the substrate for connecting a semiconductor integrated circuit.

  When the tape with a semiconductor adhesive of the present invention is used as a TAB tape, the tape with a semiconductor adhesive is punched by a press machine provided with a punching die having a predetermined pattern, and the protective film layer is peeled off. Then, after laminating using a copper foil having a thickness of 5 to 50 μm, heat treatment is performed. The copper foil lamination conditions are preferably a temperature of 100 to 160 ° C. and a pressure of 0.1 to 0.3 MPa. The heating condition is preferably step heating, and the temperature is raised gradually from 150 to 180 ° C. while gradually raising the temperature from a relatively low temperature region of 50 to 90 ° C. Next, a semiconductor integrated circuit connection substrate is obtained by forming a conductor circuit for connecting a semiconductor integrated circuit by photolithography, and preferably 400 to 500 ° C. for 1 second using the semiconductor integrated circuit connection substrate. The semiconductor device can be manufactured by performing inner lead bonding under a condition of ˜1 minute, connecting the semiconductor integrated circuit, and then performing resin sealing with an epoxy liquid sealing agent.

  When using the semiconductor tape of the present invention, a semiconductor integrated circuit is formed by punching a sprocket hole with a punching die and forming a conductor circuit for connecting the semiconductor integrated circuit by photolithography in the same manner as the above tape with adhesive for semiconductor. A connection substrate is obtained. Using the semiconductor integrated circuit connection substrate, flip chip bonding is preferably performed under conditions of 400 to 500 ° C. for 1 second to 1 minute to connect the semiconductor integrated circuits, and then resin sealing is performed with underfill. By doing so, a semiconductor device can be manufactured.

  Hereinafter, the TAB tape and the two-layer FPC will be specifically described as examples, and the semiconductor adhesive tape and semiconductor tape of the present invention will be specifically described. However, the present invention is not limited to these examples. Absent. The evaluation method will be described before the description of the examples.

[Evaluation methods and sample preparation methods]
(1) Measurement of the thermal conductivity of the organic insulating film layer If the tape is for TAB, the adhesive layer is peeled off, and if it is a two-layer FPC, the copper foil is peeled off. The rate was calculated.
Thermal conductivity (W / mK) = thermal diffusivity (m ² / s) × heat capacity (J / m ³ K)
The thermal diffusivity is about 10 mm in diameter and 50 μm thick disc-shaped sample, platinum is sputtered and coated on both sides, then carbon spray is applied on both sides about 1 μm to blacken the surface, and laser fresh at 150 ° C. Measured by the method. The heat capacity was calculated as the product of density and specific heat. The density was measured by the Archimedes method at 23 ° C. The specific heat was measured with a DSC (differential scanning calorimeter) at a heating rate of 10 ° C./min, and the measured value at 150 ° C. was used.

(2) Preparation of sample for evaluation of TAB tape The protective film of the TAB tape was peeled off, and an 18 μm electrolytic copper foil was laminated at 130 ° C. and 0.3 MPa. Subsequently, a heat treatment was sequentially performed in an air oven at 80 ° C. for 3 hours, at 100 ° C. for 5 hours, and at 150 ° C. for 5 hours to produce a TAB tape with copper foil. Photoresist film formation, etching, and resist stripping were performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method to prepare a sample for evaluation. Next, it is immersed in an electroless tin plating solution of a borofluoric acid-based (Sinplay Far East Co., Ltd. tin plating solution (trade name) TINPOSIT LT-34) at a temperature of 70 ° C. for 5 minutes to perform plating. A conductor circuit was formed and used as a sample for evaluation.

(3) Preparation of sample for evaluation of two-layer FPC Photoresist film formation, etching, and resist peeling were performed on the copper foil surface of the two-layer FPC by a conventional method to prepare a sample for evaluation. Next, it is immersed in an electroless tin plating solution of a borofluoric acid-based (Sinplay Far East Co., Ltd. tin plating solution (trade name) TINPOSIT LT-34) at a temperature of 70 ° C. for 5 minutes to perform plating. A conductor circuit was formed and used as a sample for evaluation.

(4) Adhesive strength (A) Initial adhesive strength Using the evaluation sample having a conductor width of 50 μm prepared by the method described in (2) or (3) above, the conductor was peeled at a speed of 50 mm / min in the 90 ° direction. Then, the peeling force at that time was measured.
(B) Adhesive strength after insulation evaluation On a heat insulating sheet (trade name Paper VP manufactured by Kurabo Industries Co., Ltd.) obtained by cutting a sample prepared by the same method as the sample used for the evaluation of (A) above into a square shape The conductor circuit surface was set to face up. Next, using a press heater from the upper surface, radiant heat is applied from the conductor circuit surface side so that the conductor circuit surface reaches 85 ° C., and after applying a voltage of 100 V for 1000 hours between the conductor circuits, the same conditions as in (A) The peel force was measured with and the retention before and after the treatment was calculated.
Retention rate (%) = adhesive force after application for 1000 hours / adhesive force before voltage application × 100.

(5) Change in insulation (A) insulation resistance value Insulation sheet obtained by cutting out an evaluation sample (conductor width 50 μm, distance between conductors 50 μm) into a square shape by the method described in (2) or (3) above It was set on a (trade name paper VP manufactured by Kurabo Industries Co., Ltd.) so that the conductor circuit surface would face upward. Next, radiant heat is applied from the upper surface using a press heater so that the surface of the conductor circuit reaches 85 ° C., a voltage of 100 V is applied between the conductor circuits, and the resistance value after application for 12 hours and 1000 hours The resistance value after application was measured. The ratio of the resistance value after 1000 hours applied divided by the resistance value after 12 hours applied was defined as the rate of change of the insulation resistance value.
(B) Insulation durability time A heat insulating sheet (Kurabo Co., Ltd.) obtained by cutting a sample for evaluation (conductor width 50 μm, distance between conductors 50 μm) into a square shape by the method described in (2) or (3) above. It was set on the product name (Paper VP) so that the conductor circuit surface was facing up. Next, using a press heater from the upper surface, radiant heat is applied from the conductor circuit surface side so that the conductor circuit surface becomes 130 ° C., a voltage of 100 V is applied between the conductor circuits, and the resistance value is reduced to 10 ⁶ Ω or less. The time until was regarded as the endurance time.

(6) Light transmittance of organic insulating film layer The organic insulating film layer was cut into 20 × 20 mm, and the transmittance was measured with a haze computer.

(7) Punching property A TAB tape with a protective film is punched for 100 shots at a speed of 100 shots / minute at a depth of 500 μm with a 3 mm × 6 mm square mold (clearance 8 μm), and organically insulating with a microscope. The presence or absence of cracks and burrs in the organic insulating film layer was observed from the back side of the film layer. The occurrence ratio of defective shots out of 100 shots was defined as punching property. For punching evaluation of two-layer FPC, 100 shots were punched at a rate of 100 shots / minute with a sprocket hole of a mold (clearance 8 μm), depth of 500 μm, and 12 IP / shot interval, and 100 locations were randomly extracted. And observed with a microscope. The occurrence ratio of defective places out of 100 places was defined as punching property.

Reference Example 1 Preparation of Organic Insulating Film 54.6 kg of N, N-dimethylacetamide was added to a 100 L polymerization layer, and then 8.826 kg of 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride 3.243 kg of paraphenylenediamine was added and polymerized at 30 ° C. for 10 hours to give a polymer logarithmic viscosity (30 ° C., concentration 0.5 g / 100 ml solvent, solvent N, N-dimethylacetamide) 1.60, polymer concentration Was 18% by weight of polyamic acid solution (imidation rate of 5% or less). To this polyamic acid solution, 0.1 parts by weight of triethanolamine salt of monostearyl phosphate and 6 parts by weight of alumina having an average particle diameter of 0.5 μm are added and mixed uniformly with respect to 100 parts by weight of polyamic acid. Thus, a polyamic acid composition was obtained. This polyamic acid solution was continuously cast from the slit of the T-die mold onto a smooth support in a drying furnace to form a thin film of the solution, and dried at 140 ° C. to obtain a long solid film. Next, the solidified film was cured in a curing furnace with both edges in the width direction fixed, and a long aromatic polyimide film I having a thickness of 50 μm and an imidization ratio of 95% or more was obtained. The temperature at the entrance of the curing furnace was 200 ° C., the residence time in this region was 2.5 minutes, the maximum temperature was 480 ° C., and the residence time at the maximum temperature was 3 minutes. Also, the polyimide film II is the same as the polyimide film I except that the types, contents, average particle size, particle size distribution, thickness of the organic insulating film, and presence / absence of surface treatment of the inorganic particles are as shown in Tables 1 and 2. ~ XIV was made. Here, the surface treatment means polishing by sandblasting. The physical property evaluation results of each organic insulating film are shown in Tables 1 and 2.

(Reference Example 2) Production of two-layer FPC The organic insulating film obtained in Reference Example 1 was subjected to corona discharge treatment (surface tension 75 dynes), and foreign matter was removed with an ultrasonic cleaner. Next, after setting in a sputtering apparatus and adjusting the degree of vacuum to 5 × 10 ⁻⁵ Torr, the pressure was adjusted to 2 × 10 ⁻³ Torr with argon gas, and nickel was deposited to a film thickness of 10 nm at a sputtering voltage of 500 V. The copper was vapor-deposited 300 nm by the same method above. The sputtering operation was repeated twice to form a copper layer on both sides. Furthermore, 0.5 μm electrolytic copper plating is performed at 1 A / dm ² in a low concentration sulfuric acid plating solution with a sulfuric acid concentration of 50 g / L, and 8 μm at 3 A / dm ² in a high concentration copper sulfate plating solution with a sulfuric acid concentration of 150 g / L. Electro copper plating was performed.

Reference Example 3 Synthesis of Polyamide Resin PA-1 Dimer acid (trade name PRIPOL 1098, iodine value 250) and adipic acid (dimer acid / adipic acid = 2/1 (molar ratio)) and diamine were used as acids. Hexamethylenediamine was used as an acid, an equal amount of acid / amine ratio (molar ratio) was mixed, an acid / amine reactant, an antifoaming agent and 1% or less phosphoric acid catalyst were added to prepare a reactant. The reactant was stirred and heated at 140 ° C. for 1 hour, then heated to 205 ° C. and stirred for about 1.5 hours. The temperature was lowered under a vacuum of about 2 kPa for 0.5 hours. Finally, an antioxidant (“Irganox” 1010, manufactured by Ciba-Gaigi Co., Ltd.) was added to obtain polyamide resin PA-1 having an acid value of 20, an amine value of 0.5, and a molecular weight of 9,800.

(Reference Example 4) Synthesis of Polyamide Resin PA-2 Dimer acid (trade name PRIPOL 1098, iodine value 250) and azelaic acid (dimer acid / azelaic acid = 2/1 (molar ratio)) as a diamine as acid Hexamethylenediamine and diethylenetriamine (hexamethylenediamine / diethylenetriamine = 2/1 (molar ratio)) were mixed in an equivalent amount with an acid / amine ratio (molar ratio), and the dehydration polycondensation reaction was performed in the same manner as in Reference Example 3. Except for using the product, preparation was performed in the same manner as in Reference Example 3 to obtain a polyamide resin PA-2 having an amino group in the side chain (molecular weight 24000, acid value 0.3, amine value 10).

(Reference Example 5) Synthesis of Polyamide Resin PA-3 To the polyamide resin PA-2 obtained in Reference Example 3, hydroxyphenylbenzoic acid was added in the number of moles corresponding to the number of amino groups of the polyamide resin, and a dehydration condensation reaction was performed. A polyamide resin PA-3 having a phenolic hydroxyl group in the side chain was obtained. (Molecular weight 25000, acid number 5.2, amine number 0.8)
(Reference Example 6) Synthesis of polyamide resin PA-4 / PA-5 / PA-6 3% of a commercially available copper-chromium oxide catalyst (manufactured by JGC Chemical Co., Ltd.) was added to dimer acid (trade name PRIPOL 1098 manufactured by Unikema Co., Ltd.) In an autoclave, a hydrogen pressure of 250 kg / cm ² , a reaction temperature of 275 ° C., hydrogen was flowed at 5 L / min, and the reaction was carried out so that the iodine values of dimer acid were 20, 10 and 3, respectively, and three types of dimer acid were obtained. It was. The polyamide resin PA-4 (acid value 20, amine value 0.5, iodine value 20, molecular weight 9,800), PA-5 (acid) except that each dimer acid was used was subjected to the same steps as in Reference Example 3. Value 20, amine value 0.5, iodine value 10, molecular weight 9,800) and PA-6 (acid value 20, amine value 0.4, iodine value 3, molecular weight 9,900) were obtained.
(Reference Example 7) Synthesis of polyamide resin PA-7 3% of a commercially available copper-chromium oxide catalyst (manufactured by JGC Corporation) was added to dimer acid (trade name PRIPOL 1098, manufactured by Unikema), and a hydrogen pressure of 250 kg / cm in an autoclave. ^{2. The} reaction was carried out so that the iodine value of the dimer acid was 3 by flowing hydrogen at a reaction temperature of 275 ° C. and 5 L / min. A polyamide resin PA-7 (acid value 0.3, amine value 10.1, molecular weight 23000) was obtained through the same steps as in Reference Example 4 except that this dimer acid was used.

Example 1
(A) Production of TAB tape (one aspect of semiconductor tape) Polyamide resin PA-2 obtained in Reference Example 4, epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., “Epicoat” (registered trademark) YX4000H) , Phenol resin (manufactured by Showa Polymer Co., Ltd., “Shonol” (registered trademark) CKM1636) and phenol resin (manufactured by Showa Polymer Co., Ltd., “Shonol” (registered trademark) CKM908) are shown in Table 3 respectively. The content of the epoxy resin and each phenol resin in Table 3 represents parts by weight with respect to 100 parts by weight of the polyamide resin, and further to 100 parts by weight of the solid content. 0.5 part by weight of DBU (1,8-diazabicyclo (5,4,0) undecene-7 was added as a curing accelerator, An adhesive solution was prepared by stirring and mixing in a mixed solvent of methanol / toluene = 20/80 at 30 ° C. so as to be weight% .This adhesive solution was subjected to release treatment with a bar coater (“ (Lumirror "(registered trademark)) was applied to a dry thickness of about 12 μm, and dried at 180 ° C. for 1 minute to prepare an adhesive sheet (a).

  This adhesive sheet (a) was laminated to the polyimide film I having a thickness of 50 μm obtained in Reference Example 1 under the conditions of 100 ° C. and 0.1 MPa to produce a TAB tape.

(B) Fabrication of a substrate for connecting a semiconductor integrated circuit Using the TAB tape obtained in (a) above, a conductor for connecting a semiconductor integrated circuit by the same method as the preparation method described in the evaluation method (2) above A circuit was formed to obtain a substrate for connecting a semiconductor integrated circuit having the structure shown in FIG.

(C) Production of Semiconductor Device Using the semiconductor integrated circuit connection substrate of (b) above, inner lead bonding was performed at 450 ° C. for 1 minute to connect the semiconductor integrated circuits. Thereafter, resin sealing was performed with an epoxy liquid sealing agent (“Chip Coat” 1320-617, manufactured by NAMICS Co., Ltd.) to obtain a semiconductor device having the structure shown in FIG.

(Examples 2 to 11)
A TAB tape, a semiconductor integrated circuit connecting substrate and a semiconductor device were obtained in the same manner as in Example 1 except that polyimide films II to XI were used in place of polyimide film I.

(Examples 12 to 17)
A TAB tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 5 except that the adhesive sheets b to g were used in place of the adhesive sheet a.

  The adhesive layers of the adhesive sheets b to g were prepared by the same method as described in Example 1, except that the composition of the components constituting the layers was changed as shown in Table 3. Formed using.

(Example 18)
(A) Preparation of two-layer FPC A two-layer FPC was obtained by the method described in Reference Example 2 using the polyimide film I described in Table 1.

(B) Fabrication of a substrate for connecting a semiconductor integrated circuit Using the two-layer FPC obtained by the above procedure, a conductor circuit for connecting a semiconductor integrated circuit by a method similar to the adjustment method described in the evaluation method (3) above And a substrate for connecting a semiconductor integrated circuit was obtained.

(C) Production of Semiconductor Device Using the pattern tape of (b) above, flip-chip bonding was performed at 420 ° C. for 1 minute to connect semiconductor integrated circuits. Thereafter, resin filling was performed with an epoxy liquid underfill agent (E-1172A manufactured by Emerson & Cumming Co., Ltd.) to obtain a semiconductor device having the structure shown in FIG.

(Examples 19 to 20)
A two-layer FPC tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 18 except that polyimide films V and XIII were used instead of polyimide film I.

(Example 21)
A TAB tape, a semiconductor integrated circuit connecting substrate and a semiconductor device were obtained in the same manner as in Example 1 except that the polyimide film XIII was used instead of the polyimide film I.

(Example 22)
A TAB tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 1 except that the polyimide film XII was used instead of the polyimide film I.

(Examples 23 to 26)
A TAB tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 5 except that the adhesive sheets h to k were used in place of the adhesive sheet a.

  The adhesive layers of the adhesive sheets h to k were prepared by the same method as described in Example 1 except that the composition of the components constituting the layers was changed as shown in Table 3. Formed using.

(Comparative Example 1)
A TAB tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 1 except that the polyimide film XIV was used instead of the polyimide film I.

(Comparative Example 2)
A two-layer FPC tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 18 except that the polyimide film XIV was used instead of the polyimide film I.

(Comparative Example 3)
A TAB tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 1 except that “UPILEX” (registered trademark) 75S (manufactured by Ube Industries) was used in place of the polyimide film I. .

(Comparative Example 4)
A TAB tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 1 except that “UPILEX” (registered trademark) 25S (manufactured by Ube Industries) was used instead of the polyimide film I. .

(Comparative Example 5)
A TAB tape, a semiconductor integrated circuit connecting substrate, and a semiconductor device were obtained in the same manner as in Example 1 except that “UPILEX” (registered trademark) 50S (manufactured by Ube Industries) was used instead of the polyimide film I. .

(Comparative Example 6)
A TAB tape, a semiconductor integrated circuit connecting substrate and a semiconductor device were obtained in the same manner as in Example 1 except that “Kapton” (registered trademark) 100EN (manufactured by Toray DuPont) was used instead of the polyimide film I. .

(Comparative Example 7)
A polybenzoazole film was produced according to the following steps. Under a nitrogen stream in the reactor, 14.49 parts by weight of diphosphorus pentoxide was added to 43.86 parts by weight of polyphosphoric acid of 116% (when pure phosphoric acid was 100%), and 4,6-diaminoresorcinol was further added. 9.10 parts by weight of dihydrochloride and 7.10 parts by weight of terephthalic acid micronized to an average particle size of 2 μm were added, heated to 80 ° C. and mixed with stirring. Subsequently, after mixing at 150 degreeC for 10 hours, it superposed | polymerized in the biaxial extruder heated to 200 degreeC, and obtained polymer dope. The polymer dope was extruded from a T-die at 150 ° C., and the extruded high-viscosity film dope was cast into a metal roll under an inert atmosphere, and the double-sided laminate sheet was stretched in the transverse direction at 150 ° C. with a tenter. The laminated polypropylene was peeled off and the film dope was washed with water for 24 hours and then heat-fixed at 280 ° C. to obtain a polybenzoazole film.

  Next, according to Reference Example 2, a two-layer FPC was produced using the polybenzoazole film, and a semiconductor integrated circuit connecting substrate and a semiconductor device were obtained in the same manner as in Example 18.

  The composition of the adhesive layer of each adhesive sheet is shown in Table 3, and the results of Examples 1 to 26 and Comparative Examples 1 to 7 are shown in Tables 4 to 7. From the above Examples and Comparative Examples, it was found that the tape with a semiconductor adhesive and the semiconductor tape of the present invention were excellent in insulation reliability, long-term adhesion durability and workability.

It is sectional drawing which shows the one aspect | mode of the BGA type semiconductor device using the tape with the adhesive agent for semiconductors. It is sectional drawing which shows the one aspect | mode of the CSP type semiconductor device using the tape with the adhesive agent for semiconductors. It is a perspective view showing one mode of a substrate for connecting a semiconductor integrated circuit before mounting the semiconductor integrated circuit. It is sectional drawing which shows the one aspect | mode of the semiconductor device using the board | substrate for semiconductor integrated circuit connection of FIG. FIG. 10 is a cross-sectional view illustrating one embodiment of a semiconductor device (COF) using a two-layer FPC.

Explanation of symbols

1, 12, 20, 28 Organic insulating film 2, 13, 21 Adhesive layer 3 Sprocket hole 4 Device hole 5, 14, 22, 31 Lead 6 Inner lead part 7 Outer lead part 8, 15, 23, 29 Semiconductor integration Circuit 9, 16, 24 Sealing resin 10, 17, 25, 30 Gold bump 11 Protective film 18, 26 Solder ball 19 Stiffener 27 Solder resist 32 Underfill

Claims (8)

A semiconductor tape having an organic insulating film layer and a conductor layer, wherein the organic insulating film layer contains inorganic particles, and the thermal conductivity of the organic insulating film layer is 0.4 to 120 W / A semiconductor tape characterized by being mK. 6. The semiconductor tape according to claim 1, wherein the organic insulating film layer contains 6 to 25% by weight of inorganic particles. The semiconductor tape according to claim 1, further comprising an adhesive layer between the organic insulating film layer and the conductor layer. A substrate for connecting a semiconductor integrated circuit, wherein the semiconductor tape according to claim 1 is used. A semiconductor adhesive tape having an organic insulating film layer and an adhesive layer, wherein the organic insulating film layer has a thermal conductivity of 0.4 to 120 W / mK. With tape. 6. The tape with an adhesive for semiconductor according to claim 5, wherein the organic insulating film layer contains 6 to 25% by weight of inorganic particles. A substrate for connecting a semiconductor integrated circuit, wherein the tape with an adhesive for semiconductor according to claim 5 or 6 is used. A semiconductor device using the semiconductor integrated circuit connection substrate according to claim 4.

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