JPH10106964A - Carrying device for object to be carried such as semiconductor wafer - Google Patents

Carrying device for object to be carried such as semiconductor wafer

Info

Publication number
JPH10106964A
JPH10106964A JP23186197A JP23186197A JPH10106964A JP H10106964 A JPH10106964 A JP H10106964A JP 23186197 A JP23186197 A JP 23186197A JP 23186197 A JP23186197 A JP 23186197A JP H10106964 A JPH10106964 A JP H10106964A
Authority
JP
Japan
Prior art keywords
rotating
support
semiconductor wafer
rotating column
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23186197A
Other languages
Japanese (ja)
Inventor
Hisashi Onishi
寿 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Co Ltd
Original Assignee
Shinko Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Co Ltd filed Critical Shinko Electric Co Ltd
Priority to JP23186197A priority Critical patent/JPH10106964A/en
Publication of JPH10106964A publication Critical patent/JPH10106964A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To make it possible to carry a plurality of workpiece like a semiconductor wafer to be carried sequentially and automatically in a given direction without a standby time in workpiece shifting. SOLUTION: A carrying device includes a container 1, such as a reactive chamber for storing a workpiece like a semiconductor wafer to be carried, first rotating pillars 4a, 4c, and 4e, second rotating pillars 4b, 4d, and 4f elongated from an inlet to an outlet and put alternately in a circumferential direction, driving mechanisms 9a to 9f for driving these rotating pillars 4a to 4f, and a plurality of supporting bodies 10a and 10b put in an elongated direction of the first, and second rotating pillars 4a to 4f. The driving mechanisms 9a to 9f causes alternate rotation of the first rotating pillars 4a, 4c and 4e, and the second rotating pillars 4b, 4d and 4f, clockwise or counterclockwise with a given angle, and thereby the workpiece 3 is carried one by one from the inlet of the container 1 to the outlet.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体ウェーハ等
の被搬送物を所定方向に順次、搬送するようにした半導
体ウェーハ等の被搬送物の搬送装置に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for transporting an object such as a semiconductor wafer, which sequentially transports an object such as a semiconductor wafer in a predetermined direction.

【0002】[0002]

【従来の技術】従来、半導体の単結晶を材料ウェーハの
上に形成する半導体製造用の熱処理拡散装置を含む半導
体製造装置は、図4のような構成になっていた。同図に
おいて、21は半導体製造装置であって無塵室を形成し
ている。22は移載装置であるロボットで、このロボッ
ト22のアーム23の先端に設けられたペンシル24に
よって、材料である半導体ウェーハ25をキャリアステ
ージのカセット26内の支柱に設けられた溝に収納され
ている半導体ウェーハ25を取り出し、ボート27内の
支柱に設けられる半導体ウェーハ収納用の支持部として
の溝28に移載・装填し、半導体ウェーハ25の装填を
完了したボート27は図示しない昇降手段によって上昇
して、半導体ウェーハ25を石英チューブより成る反応
チェンバ29に収納し、所要の熱処理を行うようになっ
ている。また、30はこの半導体製造装置の制御装置、
31はその操作盤で無塵室外に置かれる。ところで、従
来の半導体製造用の熱処理拡散装置では、約100枚か
ら150枚の半導体ウェーハを一括処理するのが一般的
であった。即ち、約100枚から150枚の複数の半導
体ウェーハを一括収容することのできる支柱に納め、そ
れを反応チェンバを構成する熱処理拡散炉の石英チュー
ブ内に挿入して一括して熱処理していた。
2. Description of the Related Art Conventionally, a semiconductor manufacturing apparatus including a heat treatment diffusion apparatus for manufacturing a semiconductor in which a single crystal of a semiconductor is formed on a material wafer has been configured as shown in FIG. In FIG. 1, reference numeral 21 denotes a semiconductor manufacturing apparatus, which forms a dust-free chamber. Reference numeral 22 denotes a robot which is a transfer device. A semiconductor wafer 25 as a material is housed in a groove provided on a column in a cassette 26 of a carrier stage by a pencil 24 provided at a tip of an arm 23 of the robot 22. The semiconductor wafer 25 is taken out, transferred and loaded into a groove 28 serving as a support portion for storing a semiconductor wafer provided on a column in the boat 27, and the boat 27 in which the loading of the semiconductor wafer 25 is completed is lifted by a lifting means (not shown). Then, the semiconductor wafer 25 is housed in a reaction chamber 29 formed of a quartz tube, and a required heat treatment is performed. 30 is a control device of the semiconductor manufacturing apparatus,
The operation panel 31 is placed outside the dust-free room. By the way, in a conventional heat treatment and diffusion apparatus for manufacturing semiconductors, about 100 to 150 semiconductor wafers are generally processed at once. That is, a plurality of semiconductor wafers of about 100 to 150 are housed in a column capable of collectively accommodating the semiconductor wafers, and the semiconductor wafers are inserted into a quartz tube of a heat treatment diffusion furnace constituting a reaction chamber and heat treated collectively.

【0003】[0003]

【発明が解決しようとする課題】ところで、従来のもの
では上記のように約100枚から150枚の半導体ウェ
ーハを一括収容することのできる支柱に移載し、それを
熱処理炉のある反応チェンバ内に移送して全ての半導体
ウェーハを一括熱処理していたため、次のような問題点
があった。 半導体製造装置の他の工程では、半導体ウェーハ等を
1枚ずつ処理する、いわゆる1葉処理を行っているか
ら、この半導体ウェーハの成膜処理の工程だけが、10
0〜150枚の半導体ウェーハを一括処理すると各工程
間にバランスを欠き、作業能率が低下する。即ち、反応
チェンバ内に処理対象の半導体ウェーハを移載している
時間は成膜処理が行われないため、反応チェンバ側は完
全な待ち時間(ロス時間)となると共に、反応チェンバ
で成膜処理を行っている時間も、次工程にとっては、待
ち時間となってしまう。 半導体ウェーハを積んだ支柱を反応チェンバを構成す
る石英チューブ内部に出し入れする度に、真空圧にした
り大気圧にもどしたり、また成膜処理に必要な高温度ま
での加熱や、成膜された半導体ウェーハを取り出す際に
は常温まで冷却する必要があり、それらをいちいち繰り
返さねばならなかった。 さらに、前記石英チューブ内部で複数の半導体ウェー
ハは、夫々固定した位置にあるため、半導体ウェーハの
温度やガス濃度を全ての半導体ウェーハに対して均一に
制御することが困難であった。従って、半導体製造装置
においては、半導体ウェーハを反応チェンバ等の容器内
で1方から他方へ順次1枚ずつ搬送し、その搬送過程で
所要の熱処理を行える搬送装置が要望されていた。本発
明は従来のものの上記課題(問題点)を解決し、上記要
望に応える半導体ウェーハ等の被搬送物の搬送装置を提
供することを目的とする。
By the way, in the conventional apparatus, as described above, about 100 to 150 semiconductor wafers are transferred to a column capable of collectively accommodating them, and the semiconductor wafer is placed in a reaction chamber having a heat treatment furnace. And all the semiconductor wafers were subjected to a batch heat treatment, so that there were the following problems. In other steps of the semiconductor manufacturing apparatus, so-called one-leaf processing for processing semiconductor wafers or the like one by one is performed.
When 0 to 150 semiconductor wafers are processed at once, the balance between the steps is lost, and the work efficiency is reduced. That is, since the film forming process is not performed while the semiconductor wafer to be processed is transferred into the reaction chamber, the reaction chamber side has a complete waiting time (loss time), and the film forming process is performed in the reaction chamber. Is also a waiting time for the next process. Each time a support with a semiconductor wafer is loaded into or removed from the quartz tube that constitutes the reaction chamber, it is evacuated or returned to atmospheric pressure. When taking out the wafer, it was necessary to cool down to room temperature, which had to be repeated one by one. Furthermore, since the plurality of semiconductor wafers are located at fixed positions inside the quartz tube, it has been difficult to uniformly control the temperature and gas concentration of the semiconductor wafers for all the semiconductor wafers. Therefore, in a semiconductor manufacturing apparatus, there has been a demand for a transfer apparatus capable of transferring semiconductor wafers one by one sequentially from one side to the other in a container such as a reaction chamber and performing a required heat treatment in the transfer process. SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems (problems) of a conventional device and to provide a transfer device for a transferred object such as a semiconductor wafer which meets the above demand.

【0004】[0004]

【課題を解決するための手段】本発明の半導体ウェーハ
等の被搬送物の搬送装置は、上記課題を解決するため
に、半導体ウェーハ等の被搬送物を収納し、この被搬送
物を外部から遮断し、当該容器の入口から出口へ延びる
容器、この容器内の入口から出口方向へ沿って内蔵され
円周方向に交互に配置される複数本の第1の回転支柱と
複数本の第2の回転支柱、これらの各回転支柱を駆動す
る駆動装置、前記第1の回転支柱と前記第2の回転支柱
の長手方向に設けられる被搬送物を支持するための複数
個の支持体を備え、まず、第1の回転支柱と第2の回転
支柱に付属する全部の支持体により被搬送物を支持して
いる初期状態において、第1サイクルの区間は第2の回
転支柱をその駆動装置の作動により所定角度だけ回転し
て第2の回転支柱に付属の支持体を外方に向けて被搬送
物から解放し、第1の回転支柱の駆動装置の作動によ
り、第1の回転支柱の各支持体により被搬送物を支持し
て容器の出口方向へ被搬送物を1段階移動させ、次に、
第2サイクル区間では、第2の回転支柱をその駆動装置
の作動により所定角度だけ前記とは逆方向に回転して付
属の支持体を内方に向けて被搬送物を支持する状態とし
た後、第1の回転支柱をその駆動装置の作動により所定
角度だけ回転して付属の支持体を外方に向け被搬送物か
ら解放し、被搬送物を第2の回転支柱の各支持体による
支持にゆだねて第1の回転支柱は容器の入口方向に1段
階戻し、さらに、第1の回転支柱をその駆動装置の作動
により所定角度だけ前記とは逆方向に回転して付属の支
持体を内方に向けて次の被搬送物の搬送を行う初期状態
とするようにし、以下前記の第1サイクル及び第2サイ
クルの各区間の動作を行うというように前記各区間の第
1及び第2の回転支柱の基本動作を繰り返すことにより
被搬送物を1枚ずつ容器の入口側から出口側へと連続的
に搬送するように構成した。この場合、前記第1の回転
支柱及び前記第2の回転支柱は、夫々少なくとも3本の
同数の回転支柱で構成され、第1及び第2の各回転支柱
に付属される支持体は、各回転支柱の長手方向の相対位
置に等間隔で、前記容器内部に収容される被搬送物に等
しい数だけ設けるようにするのが望ましい。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention conveys an object to be transferred such as a semiconductor wafer, and stores the object to be transferred such as a semiconductor wafer. A container that shuts off and extends from an inlet to an outlet of the container, a plurality of first rotating struts and a plurality of second rotating columns that are built in along the direction from the inlet to the outlet in the container and that are alternately arranged in a circumferential direction. A rotating column, a driving device for driving each of these rotating columns, and a plurality of supports for supporting a transferred object provided in a longitudinal direction of the first rotating column and the second rotating column. In the initial state in which the object to be transported is supported by all the supports attached to the first rotating column and the second rotating column, the section of the first cycle is driven by the operation of the driving device of the second rotating column. Rotate by a predetermined angle to become the second rotating support The support of the metal group is released outward from the object to be transported, and the object to be transported is supported by each of the supports of the first rotating column by the operation of the driving device of the first rotating column, and the direction of the outlet of the container is changed. To move the transferred object one stage, and then
In the second cycle section, the second rotating column is rotated in a direction opposite to the above by a predetermined angle by the operation of the driving device so that the attached support body faces inward to support the transferred object. The first rotating column is rotated by a predetermined angle by the operation of the driving device, the attached support is outwardly released from the object to be transported, and the object to be transported is supported by each support of the second rotating column. The first rotating column is returned one step toward the inlet of the container, and the first rotating column is rotated by a predetermined angle in a direction opposite to the above by the operation of the driving device, so that the attached support is inserted. In the initial state in which the next transported object is transported toward the first direction, and the operations in the respective sections of the first cycle and the second cycle are performed in the following manner. By repeating the basic operation of the rotating column, one transferred object It was constructed from the inlet side of the vessel to continuously transported to the outlet side. In this case, each of the first rotating support and the second rotating support is composed of at least three rotating supports of the same number, and a support attached to each of the first and second rotating supports is provided with a respective rotating support. It is desirable to provide the same number of articles to be conveyed in the container at equal intervals at relative positions in the longitudinal direction of the columns.

【0005】上記のように半導体ウェーハ等の被搬送物
を容器の入口側から出口側へ順次1枚ずつ連続的に搬送
し、被搬送物が半導体ウェーハの場合はその搬送過程で
半導体ウェーハに所定のガス下で加熱を行って成膜処理
を行うから、半導体ウェーハの成膜処理を1葉処理とす
ることができ、半導体製造装置内での他の工程とのアン
バランスが解消される。また、このような1葉処理を行
うための半導体ウェーハ等の被搬送物の搬送手段として
は、反応チェンバ内に各複数本の第1の回転支柱と第2
の回転支柱とこれらの回転支柱の駆動装置とを設け、こ
れら第1及び第2の回転支柱の所定角度の時計方向又は
反時計方向の回転と第1の回転支柱の上下運動を連動し
て行うことによって、容器に移載される半導体ウェーハ
等の被搬送物は容器の入口側から出口側に1つずつ自動
的に、連続して搬送され、その搬送過程中に所要の処理
を行うことができる。
As described above, an object to be transferred, such as a semiconductor wafer, is successively transferred one by one from the inlet side to the outlet side of the container. If the object to be transferred is a semiconductor wafer, a predetermined amount is transferred to the semiconductor wafer during the transfer process. The film formation process is performed by heating under the above gas, so that the film formation process of the semiconductor wafer can be performed as a single-wafer process, and the imbalance with other processes in the semiconductor manufacturing apparatus is eliminated. In addition, as means for carrying an object to be carried such as a semiconductor wafer for performing such one-leaf processing, a plurality of first rotating columns and a second rotating column are provided in the reaction chamber.
And a driving device for these rotating columns are provided, and the clockwise or counterclockwise rotation of the first and second rotating columns at a predetermined angle and the vertical movement of the first rotating column are performed in conjunction with each other. In this way, objects to be transferred such as semiconductor wafers transferred to the container are automatically and continuously transferred one by one from the inlet side to the outlet side of the container, and required processing can be performed during the transfer process. it can.

【0006】[0006]

【発明の実施の形態】以下図1乃至図3に示す一実施の
形態により本発明を具体的に説明する。なお、本実施の
形態では、被搬送物として半導体ウェーハの場合で説明
する。図1は本発明の半導体ウェーハ等の被搬送物の搬
送装置を内蔵する半導体ウェーハの熱処理拡散装置の全
体構成を示すもの、図2は同装置内に配置される半導体
ウェーハの連続自動搬送を行う搬送機構を示す要部拡大
斜視図、図3は上記搬送機構の要部となる第1の回転支
柱及び第2の回転支柱の間欠的に行う回転動作と半導体
ウェーハの支持動作の関係を示す平面図である。図1に
おいて、1は半導体ウェーハに所定の成膜処理を行う反
応チェンバを構成する容器としてのガラスチューブで、
その内部には複数本(本実施の形態では6本)の回転支
柱4a、4b、4c、4d、4e及び4fが円周方向に
U字形となるように所定の間隔を隔てて配置されてい
る。U字形とするのは半導体ウェーハの出し入れを可能
とするためであるが、U字形でなくとも半導体ウェーハ
の出し入れができれば、それに限らない。なお、これら
6本の回転支柱4a乃至4fには夫々の回転支柱の相対
位置に水平方向に突出する支持体を設け、これらの支持
体は、各回転支柱の長手方向に所定間隔Dを隔てて反応
チェンバ内に収納される半導体ウェーハの数だけ設ける
ものとする。これら6本の回転支柱4a〜4fの内、1
個おきに配置される3個の第1の回転支柱、即ち4a、
4c及び4eが初期状態の後に、駆動される第1サイク
ルの区間では、これらの第1の回転支柱に付属の支持体
10a、10c及び10eが半導体ウェーハを支持して
上方(反応チェンバの出口側)に移動すると共に、これ
に続く第2サイクルの区間では第1の回転支柱の支持体
を外方に向けて半導体ウェーハから解放して第2の回転
支柱の支持体に半導体ウェーハの支持をゆだねて第1の
回転支柱は下方(反応チェンバの入口側)へ移動すると
いう第1の回転支柱の役割を行う。また、第2の回転支
柱4b、4d及び4fは上記のように第1の回転支柱が
第1サイクルの区間で上方に移動するときは、その支持
体を外方に向けるように回転すると共に、第1の回転支
柱が下方へ移動する第2サイクルの区間では、半導体ウ
ェーハを支持するという第2の回転支柱の役割を夫々分
担する。このため、第1の回転支柱4a、4c及び4e
の各下端には、図2に示すように駆動装置9a、9c及
び9eが設けられ、これらの駆動装置9a、9c及び9
eの作動によって、前述のように各第1の回転支柱4
a、4c及び4eを第1サイクルの区間では、図3
(A)に示すように初期状態に維持して、これらの支持
体により半導体ウェーハを支持して上方に所定距離Dだ
け移動し、これに続く第2サイクルの区間では90度だ
け時計方向に回転して図3(C)に示すように前記の支
持体を半導体ウェーハから解放する位置に向けて半導体
ウェーハの支持動作を止めて下方に所定距離Dだけ移動
するという、第1及び第2サイクルの区間の基本動作を
繰り返し行うようになっている。また、第2の回転支柱
4b、4d及び4fの各下端には、図2に示すように駆
動装置9b、9d及び9fが設けられ、これらの駆動装
置9b、9d及び9fの作動によって各第2の回転支柱
4b、4d及び4fを前記第1サイクルの区間では所定
角度、例えば、90度だけ時計方向に回転して図3
(B)に示すように付属する支持体を半導体ウェーハか
らは解放される位置に向け、これに続く第2サイクルの
区間では90度だけ反時計方向に回転して前記支持体を
図3(C)に示すように半導体ウェーハを支持できる位
置に復帰して第1の回転支柱が半導体ウェーハを離れて
下方に移動する区間中、半導体ウェーハを支持するとい
う、第1及び第2サイクル区間の基本動作を繰り返し行
うようになっている。なお、この第2の回転支柱の第1
及び第2サイクル区間は、第1の回転支柱の第1及び第
2サイクル区間とは初期状態を挟んで各第1サイクル区
間及び第2サイクル区間の動作が交互に行われるものと
し、第2の回転支柱は回転動作だけで、上下方向への移
動動作は伴わない。再び、図1に戻り、5は導管で、こ
れは半導体ウェーハ3の上面に所定の薄膜を形成するた
めの原料ガスGを真空のガラスチューブ1内部に供給す
るものである。ガラスチューブ1の外周部には加熱器と
してのヒータ6が配置されており、ガラスチューブ1内
を搬送する半導体ウェーハ3に対して所定の加熱を行う
ようになっている。また、半導体ウェーハ3は、ウェー
ハロード機構7によってガラスチューブ1の内部に連続
して自動的に挿入され、ウェーハアンロード機構8によ
ってガラスチューブ1から連続して自動的に取り出され
る。このウェーハロード機構7は、ウェーハ入口部7A
と、バルブ7Bと、ロードロック室7Cと、バルブ7D
とから構成される。ロードロック室7Cは、バキューム
パイプ7Eを介して真空ポンプ(図示せず)に接続され
て真空となっているので、ガラスチューブ1内部の真空
条件は保たれ、またロードロック室7Cにはウェーハ移
載ロボット7Fが配置されている。ウェーハアンロード
機構8は、前述したウェーハロード機構7と同様に、ウ
ェーハ出口部8A、バルブ8B、ロードロック室8C、
バルブ8D、バキュームパイプ8E及び移載ロボット8
Fから構成されている。また、ロードロック室7C及び
8C内に反応ガスが入り込むことにより不都合が生じる
場合は、ロードロック室内に不活性ガスを入れ、ガラス
チューブ内より高い圧力に維持することもできる。以上
で本発明の半導体ウェーハ等の被搬送物の搬送装置を内
蔵する半導体ウェーハの熱処理拡散装置が構成される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to one embodiment shown in FIGS. In the present embodiment, a case where a semiconductor wafer is used as a transferred object will be described. FIG. 1 shows an overall configuration of a heat treatment / diffusion apparatus for a semiconductor wafer having a built-in apparatus for transferring a transferred object such as a semiconductor wafer according to the present invention, and FIG. 2 performs continuous automatic transfer of a semiconductor wafer disposed in the apparatus. FIG. 3 is an enlarged perspective view of a main part showing a transfer mechanism, and FIG. 3 is a plan view showing a relationship between a rotation operation intermittently performed by a first rotary support and a second rotary support, which are main parts of the transfer mechanism, and a semiconductor wafer support operation. FIG. In FIG. 1, reference numeral 1 denotes a glass tube as a container constituting a reaction chamber for performing a predetermined film forming process on a semiconductor wafer;
A plurality of (six in the present embodiment) rotating columns 4a, 4b, 4c, 4d, 4e, and 4f are arranged at predetermined intervals in the inside thereof so as to form a U-shape in the circumferential direction. . The U-shape is intended to enable the taking in and out of the semiconductor wafer, but the present invention is not limited to this as long as the semiconductor wafer can be taken in and out even if it is not U-shaped. In addition, these six rotation columns 4a to 4f are provided with supports that project in the horizontal direction at relative positions of the respective rotation columns, and these support members are separated by a predetermined distance D in the longitudinal direction of each rotation column. The number of semiconductor wafers to be accommodated in the reaction chamber is provided. Of these six rotating columns 4a to 4f, 1
Three first rotating struts arranged every other, ie 4a,
In the section of the first cycle where 4c and 4e are driven after the initial state, the supports 10a, 10c and 10e attached to these first rotating columns support the semiconductor wafer and move upward (the outlet side of the reaction chamber). ), And in the subsequent section of the second cycle, the support of the first rotating support is outwardly released from the semiconductor wafer, and the support of the semiconductor wafer is entrusted to the support of the second rotary support. Thus, the first rotating column plays a role of the first rotating column moving downward (toward the inlet side of the reaction chamber). Further, when the first rotating column moves upward in the section of the first cycle as described above, the second rotating columns 4b, 4d, and 4f rotate so that their supports are directed outward, In the section of the second cycle in which the first rotating column moves downward, the role of the second rotating column supporting the semiconductor wafer is shared. For this reason, the first rotating columns 4a, 4c and 4e
At the lower ends of the driving devices 9a, 9c and 9e are provided as shown in FIG. 2, and these driving devices 9a, 9c and 9e are provided.
e, each of the first rotating struts 4 is operated as described above.
a, 4c and 4e in the section of the first cycle, FIG.
As shown in (A), the semiconductor wafer is supported by these supports and moved upward by a predetermined distance D while being kept in the initial state, and is rotated clockwise by 90 degrees in the subsequent second cycle section. Then, as shown in FIG. 3 (C), the support operation of the semiconductor wafer is stopped toward the position where the support is released from the semiconductor wafer, and the semiconductor wafer is moved downward by a predetermined distance D. The basic operation of the section is repeatedly performed. Drive units 9b, 9d and 9f are provided at the lower ends of the second rotating columns 4b, 4d and 4f, respectively, as shown in FIG. 3 is rotated clockwise by a predetermined angle, for example, 90 degrees in the section of the first cycle.
As shown in FIG. 3 (B), the attached support is turned to a position where it is released from the semiconductor wafer, and in the subsequent second cycle, the support is rotated counterclockwise by 90 degrees to move the support in FIG. (1) basic operation of the first and second cycle sections, in which the semiconductor wafer is supported during the section in which the first rotating column returns to the position capable of supporting the semiconductor wafer and moves downward away from the semiconductor wafer. Is to be repeated. In addition, the first of the second rotating columns
In the second cycle section, the operations of the first cycle section and the second cycle section are performed alternately with the first and second cycle sections of the first rotating support with the initial state interposed therebetween. The rotating column only rotates, and does not move up and down. Returning to FIG. 1 again, reference numeral 5 denotes a conduit for supplying a source gas G for forming a predetermined thin film on the upper surface of the semiconductor wafer 3 into the vacuum glass tube 1. A heater 6 as a heater is arranged on an outer peripheral portion of the glass tube 1 so as to perform predetermined heating on the semiconductor wafer 3 transported in the glass tube 1. The semiconductor wafer 3 is automatically and continuously inserted into the glass tube 1 by the wafer loading mechanism 7, and is automatically and continuously removed from the glass tube 1 by the wafer unloading mechanism 8. The wafer loading mechanism 7 has a wafer entrance 7A.
, Valve 7B, load lock chamber 7C, valve 7D
It is composed of Since the load lock chamber 7C is connected to a vacuum pump (not shown) through a vacuum pipe 7E to be in a vacuum, the vacuum condition inside the glass tube 1 is maintained, and the wafer is transferred to the load lock chamber 7C. The loading robot 7F is arranged. The wafer unloading mechanism 8 includes a wafer outlet 8A, a valve 8B, a load lock chamber 8C,
Valve 8D, vacuum pipe 8E and transfer robot 8
F. Further, when a problem occurs due to the reaction gas entering the load lock chambers 7C and 8C, an inert gas can be introduced into the load lock chamber to maintain the pressure higher than that in the glass tube. As described above, the heat treatment / diffusion apparatus for a semiconductor wafer, which incorporates the apparatus for transporting an object such as a semiconductor wafer according to the present invention, is configured.

【0007】次に、本発明の半導体ウェーハ等の被搬送
物の搬送装置を内蔵する半導体ウェーハの熱処理拡散装
置の動作を図2、図3のほか図1も参照して説明する。
なお、図2には反応チェンバを構成するガラスチューブ
1の上方の出口側部分しか図示されていないが、その下
方に設けられる入口部分での動作は、図1を参照するこ
とにより、本発明の半導体ウェーハ等の被搬送物の搬送
装置を内蔵する熱処理拡散装置における自動搬送機構の
基本動作を説明する。本発明の装置を駆動すると、ま
ず、ウェーハロード機構7によって、処理対象の半導体
ウェーハ3の最初の1枚目がガラスチューブ1中にロボ
ット7Fにより移載される。この場合は、各回転支柱4
a〜4fの付属の1段目の各支持体10a〜10fは全
て図3(A)に示すように、内方に向けられ半導体ウェ
ーハを支持する初期状態の位置にあり、1枚目の半導体
ウェーハ3を支持している。次に、第2の回転支柱4
b、4d及び4fが所定角度だけ時計方向に回転して付
属の支持体10b、10d及び10fを外方に向けて半
導体ウェーハを解放する。第1の回転支柱4a、4c及
び4eは半導体ウェーハを支持した初期状態の図3
(B)に示す第1サイクル区間の状態とし、第1の回転
支柱4a、4c及び4eが1枚目の半導体ウェーハ3を
支持したまま上方に所定距離Dだけ移動する。次に、第
2サイクル区間となると、先ず、1枚目の半導体ウェー
ハ3は、第1の回転支柱の支持体10a、10c及び1
0eのほか第2の回転支柱4b、4d及び4fの反時計
方向の回転によって半導体ウェーハ3に向けられた支持
体の内の下から2段目の支持体10b、10d及び10
fによっても支持される(図3(A))。この後、第1
の回転支柱4a、4c及び4eは時計方向に90度回転
して半導体ウェーハから外れる位置に各支持体を向けて
半導体ウェーハを解放し、図3(C)に示す半導体ウェ
ーハの支持は第2の回転支柱にゆだねる状態とし、第1
の回転支柱は下方に所定距離Dだけ戻り、2枚目の半導
体ウェーハの搬送に備える。次に、ウェーハロード機構
7から2枚目の半導体ウェーハ3がガラスチューブ1中
にロボット7Fにより移載されると、また、前記した図
3(A)の初期状態を経て、前記と同様に2枚目の半導
体ウェーハの搬送が行われる。以下第1及び第2の回転
支柱の上述した初期状態をはさんで行われる第1及び第
2サイクル区間よりなる基本動作を繰り返すことによ
り、半導体ウェーハは順次、1枚ずつ下方の入口側から
上方の出口側に向けて搬送され、出口に達した半導体ウ
ェーハはウェーハアンロード機構8により、次工程へと
1枚ずつ搬出される。なお、このようにガラスチューブ
1内を1枚ずつ搬送される半導体ウェーハ3は、このよ
うな搬送の過程で、導管5からガラスチューブ1内に供
給されガスGとヒータ6による加熱処理により所定の成
膜処理が施される。
Next, the operation of the apparatus for heat-treating and diffusing semiconductor wafers according to the present invention, which incorporates the apparatus for transporting objects such as semiconductor wafers, will be described with reference to FIGS.
Although FIG. 2 shows only the outlet side above the glass tube 1 constituting the reaction chamber, the operation at the inlet provided below the glass tube 1 will be described with reference to FIG. The basic operation of the automatic transfer mechanism in the heat treatment / diffusion apparatus incorporating a transfer device for a transferred object such as a semiconductor wafer will be described. When the apparatus of the present invention is driven, first, the first wafer of the semiconductor wafer 3 to be processed is transferred by the robot 7F into the glass tube 1 by the wafer loading mechanism 7. In this case, each rotating column 4
As shown in FIG. 3A, all of the first-stage supports 10a to 10f attached to the first to fourth semiconductor substrates a to 4f are in the initial position where the semiconductor wafers are directed inward and support the semiconductor wafer. The wafer 3 is supported. Next, the second rotating support 4
b, 4d and 4f rotate clockwise by a predetermined angle to release the semiconductor wafer with the attached supports 10b, 10d and 10f outward. The first rotating columns 4a, 4c and 4e are shown in FIG. 3 in an initial state supporting a semiconductor wafer.
In the state of the first cycle section shown in (B), the first rotating columns 4a, 4c and 4e move upward by a predetermined distance D while supporting the first semiconductor wafer 3. Next, in the second cycle section, first, the first semiconductor wafer 3 includes the support members 10a, 10c, and 1 of the first rotating column.
0e and the second lower supports 10b, 10d and 10 of the supports directed to the semiconductor wafer 3 by the counterclockwise rotation of the second rotary columns 4b, 4d and 4f.
f (FIG. 3A). After this, the first
Are rotated by 90 degrees clockwise and each support is turned to a position outside the semiconductor wafer to release the semiconductor wafer, and the support of the semiconductor wafer shown in FIG. Leave it to the rotating support,
Is returned downward by a predetermined distance D to prepare for the transfer of the second semiconductor wafer. Next, when the second semiconductor wafer 3 is transferred from the wafer loading mechanism 7 into the glass tube 1 by the robot 7F, the second semiconductor wafer 3 passes through the initial state shown in FIG. The transport of the second semiconductor wafer is performed. By repeating the basic operation consisting of the first and second cycle sections performed between the above-described initial states of the first and second rotating columns, the semiconductor wafers are successively placed one by one from the lower entrance side. The semiconductor wafers which have been transported toward the outlet side and reached the outlet are unloaded one by one to the next step by the wafer unloading mechanism 8. In this manner, the semiconductor wafers 3 conveyed one by one in the glass tube 1 are supplied into the glass tube 1 from the conduit 5 in the course of such conveyance, and are subjected to a predetermined treatment by the gas G and the heat treatment by the heater 6. A film forming process is performed.

【0008】本発明は上記した実施の形態に限定される
ものではない。例えば、被搬送物として半導体ウェーハ
の場合を示したが、これに限定されない。また、上述の
実施の形態では、第1の回転支柱及び第2の回転支柱は
夫々3本の例を示したが、各回転支柱の数は3本に限定
されず、例えば、4本であっても良い。また、各回転支
柱の回転の順序を第1の回転支柱を第1サイクル区間で
は時計方向の回転から始め、第2の回転支柱は反時計方
向に回転する場合から始めるようにした場合を説明した
が、各回転支柱に付属の支持体の向きさえ、上述のもの
と同じであれば、このような支持体の向きとするための
各回転支柱の回転動作は、上記とは逆の順序の回転動
作、即ち、第1の回転支柱を第1サイクル区間では反時
計方向の回転から始め、第2の回転支柱を時計方向の回
転から始めるようにしても良い。また、第1の回転支柱
の上下の移動距離を被搬送物相互間距離Dより若干広く
することにより、支柱が回転するときに生じる被搬送物
と支持体との摩擦を避けることができる。また、上記実
施の形態では、半導体ウェーハ等の被搬送物を収容する
反応チェンバ等の容器が縦型設置の場合であって、同容
器内を下から上に向かって搬送される場合についての本
発明の実施の形態を説明したが、本発明は反応チェンバ
等の容器を横型設置し、半導体ウェーハ等の被搬送物を
反応チェンバ等の容器の入口側から出口側へと横方向に
移動させるようにしても良いことは勿論である。
[0008] The present invention is not limited to the above embodiment. For example, although the case where the transferred object is a semiconductor wafer has been described, the present invention is not limited to this. Further, in the above-described embodiment, the example in which the first rotating support and the second rotating support are respectively three is shown, but the number of each rotating support is not limited to three, and is, for example, four. May be. In addition, the description has been given of the case where the order of rotation of the respective rotating struts is such that the first rotating strut starts from clockwise rotation in the first cycle section and the second rotating strut starts from counterclockwise rotating. However, as long as the direction of the support attached to each rotating column is the same as that described above, the rotating operation of each rotating column for setting the direction of such a supporting member is performed in the reverse order of the above. The operation, that is, the first rotating strut may be started from a counterclockwise rotation in the first cycle section, and the second rotating strut may be started from a clockwise rotation. Further, by making the vertical moving distance of the first rotating support slightly larger than the distance D between the transferred objects, it is possible to avoid friction between the transferred object and the support that occurs when the support rotates. Further, in the above embodiment, the case where the container such as the reaction chamber for accommodating the object to be transferred such as a semiconductor wafer is of a vertical type and the case where the container is transferred from the bottom to the top in the container is described. Although the embodiment of the present invention has been described, the present invention installs a container such as a reaction chamber in a horizontal direction, and moves an object such as a semiconductor wafer in a lateral direction from an inlet side of the container such as a reaction chamber to an outlet side. It goes without saying that it is possible to do so.

【0009】[0009]

【発明の効果】以上述べたように、本発明によれば第1
の回転支柱及び第2の回転支柱が、夫々連動して駆動す
ることによって、半導体ウェーハ等の被搬送物支持の役
目を交互に分担しながら、また第1の回転支柱が半導体
ウェーハ等の被搬送物を反応チェンバ等の容器の入口側
から出口側方向の搬送作用を果たすようにしたものであ
るから、次のような優れた効果を有する。 容器内に収容された全ての被搬送物が連続して容器の
入口側から出口側に自動的に搬送され得るので、被搬送
物が半導体ウェーハの場合は、その成膜処理と半導体ウ
ェーハの搬送とが同時に進行するので、従来のような移
載待ち時間を無くすことができるばかりでなく、スルー
プットも低下せず行うことができる。このように、本発
明の搬送装置は被搬送物を連続的に1つずつ搬送し、必
要な処理を行うことを可能としたものであるから、他の
工程とも作業体系のアンバランスを生じることはなくな
り、作業効率も大幅に向上する。 全ての被搬送物は、全く同一の経路を順次通過するの
で、被搬送物が半導体ウェーハの場合、その上に形成さ
れる成膜の品質が均一となる。 このような搬送動作を、本発明では上記のように容器
内に配置される支持体を備えた第1及び第2の回転支柱
の連動動作によって1つずつ順次行うものであるから、
搬送機構の構成は簡単な構成で良い。
As described above, according to the present invention, the first
The first rotating support and the second rotating support alternately share the role of supporting a transferred object such as a semiconductor wafer by being driven in conjunction with each other. Since the transfer of the material from the inlet side to the outlet side of the container such as the reaction chamber is performed, the following excellent effects are obtained. Since all objects to be transferred contained in the container can be automatically transferred continuously from the inlet side to the outlet side of the container, when the object to be transferred is a semiconductor wafer, the film forming process and the transfer of the semiconductor wafer are performed. Are performed simultaneously, so that not only the conventional transfer waiting time can be eliminated, but also the throughput can be performed without lowering. As described above, the transfer device of the present invention is capable of continuously transferring the conveyed objects one by one and performing necessary processing, so that the work system may be unbalanced with other processes. And work efficiency is greatly improved. Since all objects to be transferred sequentially pass through exactly the same path, when the object to be transferred is a semiconductor wafer, the quality of a film formed thereon becomes uniform. In the present invention, such a transport operation is sequentially performed one by one by the interlocking operation of the first and second rotating columns having the support disposed in the container as described above.
The configuration of the transport mechanism may be a simple configuration.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態である半導体ウェーハ等
の被搬送物の搬送装置を内蔵する半導体ウェーハの熱処
理拡散装置の全体構成を示す縦断正面図である。
FIG. 1 is a vertical cross-sectional front view showing an overall configuration of a heat treatment / diffusion apparatus for a semiconductor wafer having a built-in transfer device for a transferred object such as a semiconductor wafer according to an embodiment of the present invention.

【図2】図1に示す半導体ウェーハ等の被搬送物の搬送
装置を内蔵する半導体ウェーハの熱処理拡散装置内の半
導体ウェーハの連続自動搬送機構の要部を詳細に示す斜
視図である。
FIG. 2 is a perspective view showing in detail a main part of a continuous automatic transfer mechanism for semiconductor wafers in a semiconductor wafer heat treatment / diffusion apparatus having a built-in transfer apparatus for transferring an object such as a semiconductor wafer shown in FIG. 1;

【図3】同図(A)、(B)及び(C)は、第1の回転
支柱及び第2の回転支柱の夫々の所定の順序で変化する
動作と半導体ウェーハの支持動作の関係を示す平面図で
ある。
FIGS. 3A, 3B, and 3C show the relationship between the operation of the first rotating column and the second rotating column, which change in a predetermined order, and the operation of supporting the semiconductor wafer. FIGS. It is a top view.

【図4】従来例の半導体製造用の熱処理拡散装置を含む
半導体製造装置の構成を示す縦断正面図である。
FIG. 4 is a vertical sectional front view showing a configuration of a conventional semiconductor manufacturing apparatus including a heat treatment diffusion apparatus for manufacturing a semiconductor.

【符号の説明】[Explanation of symbols]

1:ガラスチューブ(容器) 3:半導体ウェーハ(被搬送物) 4a、4c、4e:第1の回転支柱 4b、4d、4f:第2の回転支柱 10a〜10f:支持体 1: glass tube (container) 3: semiconductor wafer (conveyed object) 4a, 4c, 4e: first rotating support 4b, 4d, 4f: second rotating support 10a to 10f: support

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウェーハ等の被搬送物を収納し、
この被搬送物を外部から遮断し、当該容器の入口から出
口へ延びる容器、この容器内の入口から出口方向へ沿っ
て内蔵され円周方向に交互に配置される複数本の第1の
回転支柱と複数本の第2の回転支柱、これらの各回転支
柱を駆動する駆動装置、前記第1の回転支柱と前記第2
の回転支柱の長手方向に設けられる被搬送物を支持する
ための複数個の支持体を備え、 まず、第1の回転支柱と第2の回転支柱に付属する全部
の支持体により被搬送物を支持している初期状態におい
て、 第1サイクルの区間は第2の回転支柱をその駆動装置の
作動により所定角度だけ回転して第2の回転支柱に付属
の支持体を外方に向けて被搬送物から解放し、第1の回
転支柱の駆動装置の作動により、第1の回転支柱の各支
持体により被搬送物を支持して容器の出口方向へ被搬送
物を1段階移動させ、 次に、第2サイクルの区間では、第2の回転支柱をその
駆動装置の作動により所定角度だけ前記とは逆方向に回
転して付属の支持体を内方に向けて被搬送物を支持する
状態とした後、第1の回転支柱をその駆動装置の作動に
より所定角度だけ回転して付属の支持体を外方に向け被
搬送物から解放し、被搬送物を第2の回転支柱の各支持
体による支持にゆだねて第1の回転支柱は容器の入口方
向に1段階戻し、さらに、第1の回転支柱をその駆動装
置の作動により所定角度だけ前記とは逆方向に回転して
付属の支持体を内方に向けて次の被搬送物の搬送を行う
初期状態とするようにし、 以下前記の第1サイクル及び第2サイクルの各区間の動
作を行うというように前記各区間の第1及び第2の回転
支柱の基本動作を繰り返すことにより被搬送物を1つず
つ容器の入口側から出口側へと連続的に搬送するように
したことを特徴とする半導体ウェーハ等の被搬送物の搬
送装置。
An object to be transported such as a semiconductor wafer is stored therein.
A container extending from an inlet to an outlet of the container for blocking the transferred object from the outside, and a plurality of first rotating columns built in the container along the direction from the inlet to the outlet and alternately arranged in the circumferential direction And a plurality of second rotating columns, a driving device for driving each of these rotating columns, the first rotating column, and the second rotating column.
A plurality of supports for supporting a transferred object provided in the longitudinal direction of the rotating column, and the transferred object is firstly supported by all the supporting members attached to the first rotating column and the second rotating column. In the initial state of supporting, in the section of the first cycle, the second rotating column is rotated by a predetermined angle by the operation of the driving device, and the support attached to the second rotating column is transported outward. Released from the object, and by the operation of the driving device of the first rotating support, the transferred object is supported by each support of the first rotating support, and the transferred object is moved one step toward the outlet direction of the container. In the section of the second cycle, the second rotating column is rotated in a direction opposite to the above by a predetermined angle by the operation of the driving device to support the transported object with the attached support body facing inward. After that, the first rotating column is moved to a predetermined angle by the operation of its driving device. And the attached support is turned outward to release it from the object to be transported, and the object to be transported is subjected to the support by the respective supports of the second rotating column, and the first rotating column is moved toward the inlet of the container by one. The initial state in which the first rotating support is rotated by a predetermined angle in a direction opposite to the above by the operation of the driving device, and the attached support is directed inward to transport the next transported object. By repeating the basic operation of the first and second rotating columns in each section so as to perform the operation in each section of the first cycle and the second cycle, one object is transferred. A device for transporting an object such as a semiconductor wafer, wherein the object is continuously transported from an inlet side to an outlet side of the container.
【請求項2】 前記第1の回転支柱及び前記第2の回転
支柱は、夫々少なくとも3本の同数の回転支柱で構成さ
れ、第1及び第2の各回転支柱に付属される支持体は、
各回転支柱の長手方向の相対位置に等間隔で、前記容器
内部に収容される被搬送物に等しい数だけ設けるように
した請求項1記載の半導体ウェーハ等の被搬送物の搬送
装置。
2. The first rotating column and the second rotating column each include at least three rotating columns of the same number, and a support attached to each of the first and second rotating columns is:
2. The apparatus for transporting an object such as a semiconductor wafer according to claim 1, wherein the number of objects to be transported accommodated in the container is provided at equal intervals at relative positions in the longitudinal direction of the respective rotating columns.
JP23186197A 1997-08-14 1997-08-14 Carrying device for object to be carried such as semiconductor wafer Pending JPH10106964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23186197A JPH10106964A (en) 1997-08-14 1997-08-14 Carrying device for object to be carried such as semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23186197A JPH10106964A (en) 1997-08-14 1997-08-14 Carrying device for object to be carried such as semiconductor wafer

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14241995A Division JPH08316159A (en) 1995-05-18 1995-05-18 Semiconductor wafer heat treating and diffusing apparatus

Publications (1)

Publication Number Publication Date
JPH10106964A true JPH10106964A (en) 1998-04-24

Family

ID=16930177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23186197A Pending JPH10106964A (en) 1997-08-14 1997-08-14 Carrying device for object to be carried such as semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH10106964A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138076A (en) * 2013-01-16 2014-07-28 Tokyo Electron Ltd Film forming method and film forming apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138076A (en) * 2013-01-16 2014-07-28 Tokyo Electron Ltd Film forming method and film forming apparatus

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