JP2001319850A - Liquid processing method, liquid processing device, and thin film formation system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid processing method, a liquid processing device, and a thin film formation system, by which the periphery of an object can be cleaned in finely controllable state. SOLUTION: At least one of the holding members 52 holding wafers W is formed in a manner that a load given to a wafer W may be different from those given to the other wafers W. When the holding members 52 are rotated to rotate the wafer W, a rotary central axis 72 of the wafer W deviates from the center 71 of the wafer W because different loads are applied to the wafer W, and the wafer rotates stably in a state where it is slightly shifted in a specified direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid processing method, a liquid processing apparatus, and a thin film forming system, and more particularly, to a liquid processing method for cleaning (removing) the periphery of a thin film formed on the surface of an object to be processed, and a liquid processing. The present invention relates to an apparatus and a thin film forming system.

[0002]

2. Description of the Related Art A process for manufacturing an electronic device such as a semiconductor includes a process of forming a thin film on an object to be processed, for example, a substrate such as a wafer. For example, in a manufacturing process of a semiconductor wafer having metal wiring, PV
After forming a seed layer by D or the like, a process of forming a metal thin film by plating is included.

In such a process of forming a thin film on a substrate, a uniform film is formed on the surface of the substrate, but a non-uniform film is often formed on the periphery thereof. Therefore, in order to obtain good device characteristics, it is necessary to remove the film on the periphery of the substrate.

In the process of manufacturing a semiconductor device, if a thin film on the periphery of a substrate is not removed but is present, the thin film is peeled off and scattered by contact with a carrier at the time of transport.
Particles may be generated and contaminate carriers and devices.

In particular, in the Cu wiring in a semiconductor wafer, Cu has a higher diffusion coefficient than the Si and SiO _2, thus greatly degrade the device characteristics such as leakage current increases when dispersed into the Si substrate. In addition, the wafer immediately after the plating process has a Cu seed film and a Cu plating film on the periphery thereof, and when these come into contact with a carrier or the like, C
It becomes a cause of u contamination and generation of particles, and a source of Cu diffusion into the Si substrate.

[0006] Such contamination of the device by the thin film peeled off from the peripheral edge is caused by the progress of device densification.
This leads to lower device yield. Therefore, it is necessary to clean the peripheral edge of the substrate to remove unnecessary thin films on the peripheral edge of the substrate.

[0007] As a method of removing an unnecessary thin film on the periphery of the substrate, for example, a method of spraying a cleaning liquid onto the periphery of the substrate to remove it is used. In this method, a cleaning process is performed by supplying a cleaning liquid to the periphery from above the substrate surface with a nozzle or the like while the substrate is rotated.

[0008]

However, in such a method, it is difficult to rotate the substrate so that the rotation center axis of the substrate is the same in all the cleaning processes of the substrate. There has been a problem that the rotation center axis is slightly different, and the position and size of cleaning (removal) differ depending on each substrate.
In particular, in recent years, it has been required to reduce the peripheral edge to be cleaned in order to widen the device fabrication area, and it has been necessary to finely control the cleaning process.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a liquid processing method, a liquid processing apparatus, and a thin film forming system capable of finely controlling the cleaning of the periphery of an object to be processed.

[0010]

In order to achieve the above object, a liquid processing method according to a first aspect of the present invention is directed to a method for applying a load to a plurality of holding members by applying a load from a side of the object. A liquid processing method of rotating the holding member and the object held by the holding member, supplying a cleaning liquid to a peripheral portion of the object, and cleaning a peripheral edge of the object. In addition, at least one of the holding members is held so that a load applied to the object to be processed is different.

According to this configuration, the object to be processed stably rotates while slightly moving in a predetermined direction due to a difference in the load applied to the object to be processed. For this reason, the position and size to be cleaned are the same depending on the object to be processed, and the liquid processing apparatus can be finely controlled.

It is preferable that the holding member holds the object to be processed while rotating the object so that the rotation center axis of the object is constant. In this case, the position and size to be cleaned are the same depending on the object to be processed, and the liquid processing apparatus can be finely controlled.

[0013] The holding member holds the object to be processed so that the rotation center axis of the object is different from the center of the object.
Is preferred. In this case, the object to be processed stably rotates while slightly moving in a predetermined direction.

It is preferable that the cleaning liquid is supplied to the periphery of the object farthest from the rotation center axis of the object while the object is rotated. in this case,
Even when the width of the peripheral edge of the wafer W to be subjected to the cleaning process is reduced, the cleaning process can be finely controlled.

[0015] A liquid processing apparatus according to a second aspect of the present invention comprises:
A plurality of holding members for holding the object to be processed, holding means for holding the object by applying a load from the side of the object to be processed by the holding member, and holding means for holding the object; A rotating unit configured to rotate the processing target; and a cleaning unit configured to supply a cleaning liquid to a periphery of the processing target rotating by the rotating unit. At least one of the holding members is provided to the processing target. A load applied to the object to be processed from another holding member.

According to this configuration, due to the difference in the load applied to the object, the object rotates stably while slightly moving in a predetermined direction. For this reason, the position and the size of the object to be cleaned are the same, and the cleaning process can be finely controlled.

The holding means comprises a plurality of centrifugal chucks. If the centrifugal chuck is provided with weights having different weights, the load applied to the object can be easily changed.

In the centrifugal chuck, the weight of one centrifugal chuck is lighter than the weight of another centrifugal chuck.
Is preferred. In this case, the object moves to the centrifugal force chuck side where the weight is light, and the object can be rotated stably.

It is preferable that the cleaning means is arranged so as to supply the cleaning liquid to a position farthest from a rotation center axis of the object to be processed in a state where the object to be processed is rotated.
In this case, the cleaning process can be finely controlled even when the width of the peripheral edge of the object to be cleaned is reduced.

A thin film forming system according to a third aspect of the present invention includes a thin film forming apparatus for forming a thin film on an object to be processed, and a liquid processing apparatus according to the second aspect of the present invention. I do.

In this configuration, the thin film is formed on the object by the thin film forming apparatus, and the thin film formed on the peripheral edge of the object is finely and controllably removed by the liquid processing apparatus.

The thin film forming system comprises a multi-chamber system. When the thin film forming apparatus and the liquid processing apparatus are disposed in each chamber of the multi-chamber system, the thin film forming system can be formed automatically and continuously.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a liquid processing method, a liquid processing apparatus, and a thin film forming system according to an embodiment of the present invention will be described as an example of a plating system having a substrate cleaning apparatus. 1 to 3 show a plating system 1 according to the present embodiment.
1 is a schematic diagram showing FIG. 1, FIG. 1 is a perspective view, FIG. 2 is a plan view,
FIG. 3 is a side view.

As shown in FIGS. 1 to 3, the plating system 11 includes a cassette station 21, a processing station 22, and a mounting table 24 on which a wafer cassette 23 containing wafers to be plated is mounted. Have.

The cassette station 21 is provided with a first transport mechanism 25. The first transfer mechanism 25 is configured to be movable in the left-right direction (vertical direction in FIG. 2) so as to be able to access the wafer cassettes 23 mounted on the mounting table 24. It is configured to be able to move up and down in the direction perpendicular to the plane of FIG. The first transfer mechanism 25 is configured to be capable of moving forward and backward in the horizontal direction and rotatable so that the wafer in the wafer cassette 23 can be delivered to the processing station 22.

The first transfer mechanism 25 transfers the wafer from the wafer cassette 23a placed on the mounting table 24 to the plating system 11 (processing station 22). In addition,
A seed layer is formed on the loaded wafer by, for example, sputtering. Also, the first transport mechanism 25
Transports the cleaned wafer from the plating system 11 (processing station 22) to the wafer cassette 23b, as will be described later.

The space above the mounting table 24 and the cassette station 21 are connected by a gate (not shown). The cassette station 21 and the processing station 22 are connected by a gate (not shown). Further, the clean air is down-flowed to the cassette station 21 and the processing station 22, and the cassette station 21 and the processing station 2
The atmosphere inside 2 is kept clean.

The processing station 22 includes a plating unit 26 composed of a plating apparatus for plating a wafer, a cleaning / drying unit 27 composed of a substrate cleaning apparatus for cleaning and drying after the plating, An extra unit 28 provided as a spare for these units, a second transport mechanism 29 for transporting wafers in the processing station 22, and a wafer temporarily loaded by the first transport mechanism 25. Mounting section 30.

As shown in FIG. 2, a second transfer mechanism 29 is provided at the center of the processing station 22, and a plurality of units are radially arranged around the second transfer mechanism 29. Further, as shown in FIG. 3, the processing stations 22 are arranged in two upper and lower stages. In the present embodiment,
The processing station 22 has four plating processing units 26 in the lower stage and two cleaning / drying units 27 in the upper stage.
And two extra units 28 are arranged.

In the plating unit 26, the wafer on which the seed layer has been formed is transported by the second transport mechanism 29, and the transported wafer is plated, for example, a Cu thin film is formed on the wafer.

In the cleaning / drying unit 27, as described later, the front surface, the back surface, and the periphery of the plated wafer are cleaned with a cleaning solution such as a chemical solution or pure water, and after the cleaning, the wafer is rotated at a high speed under, for example, N ₂ purge. Then, the wafer is dried.

The extra unit 28 is a unit provided as a spare for the plating unit 26 and the cleaning / drying unit 27. For example, in case of a failure of these units, a substrate cleaning device is accommodated. Also,
Instead of these units, an annealing unit for performing an annealing process after the plating process may be provided.

The second transport mechanism 29 is configured to be rotatable in the horizontal direction so that each processing unit in the processing station 22 configured in two stages can be accessed.
It is configured to be able to move up and down in the vertical direction (the direction perpendicular to the plane of FIG. 2).

The second transport mechanism 29 receives the wafer loaded from the cassette station 21 by the first transport mechanism 25 and loaded on the loading section 30 in the processing station 22, and receives the wafer from any one of the lower plating processing units 26. Crabs are transported. After the plating process is completed, the plated wafer is transported from the plating unit 26 to the cleaning / drying unit 27. The first transport mechanism 25 receives the washed and dried wafer and stores it in the cassette 23b. By such an operation, the first transport mechanism 25 handles only the wafer before the plating process or the wafer after the cleaning and drying, and it is possible to suppress the diffusion of the contamination due to the plating solution or the like.

The second transfer mechanism 29 has at least two arms, one for transferring a wafer from the mounting unit 30 to the plating unit 26, and one for transferring the wafer from the plating unit 26 to the cleaning / drying unit 27. Is carried to minimize the contamination by particles, chemicals, and the like.

The movement of the first transport mechanism 25 and the second transport mechanism 29 and the processing operations of the plating unit 26 and the cleaning / drying unit 27 are controlled by a control device (not shown) including a microprocessor and the like.

Next, the cleaning / drying unit 27 constituted by the substrate cleaning apparatus will be described. FIG. 4 is a sectional view showing the cleaning / drying unit 27.

As shown in FIG.
Is a rectangular housing 40 in which an entrance 416 of the second transport mechanism 29 and an entrance 417 of the first transport mechanism 25 are formed.
1 is housed. The housing 401 is provided with a substantially cylindrical cup 402 having an open upper surface.
The cup 402 is configured to be vertically driven by a cup driving unit 403.

At the center of the housing 401, a rotary driver 404 is arranged. The rotary driving body 404 includes a hollow motor 4 disposed so as to protrude outside the housing 401.
By driving the motor 05, it rotates at a predetermined rotation speed.

A first shaft 407 is attached to the rotary driver 404.
Are formed. A rotary table 406 is fixed to the upper end of the outer peripheral surface of the first shaft 407. A second shaft 408 is formed inside the first shaft 407. A back surface cleaning nozzle 409 is fixed on the second shaft 408. This back surface cleaning nozzle 40
9 exists between the wafer W and the rotary table 406 when the wafer W is held.

FIG. 5 is a schematic view showing the vicinity of the back surface cleaning nozzle 409. FIG. 5A is a schematic diagram illustrating the shape of the back surface cleaning nozzle 409, and FIG. 5B is a cross-sectional view illustrating a flow path in the back surface cleaning nozzle 409.

As shown in FIG. 5A, the back surface cleaning nozzle 409 has a rotating table 406 in which four rods are formed in a cross shape.
, And the center thereof is fixed to the second shaft 408. As shown in FIG. 5B, the inside of the rod-shaped back surface cleaning nozzle 409 is hollow,
It communicates with a tube 410 passing through the inside of the second shaft 408. The rod-shaped body of the back surface cleaning nozzle 409 is provided with a blowout port 51 having an open upper side. Is supplied upward.

Further, a gas flow path 411 is formed in a space between the first shaft 407 and the second shaft 408 so that an inert gas, for example, a nitrogen gas is blown out. This inert gas is blown outward from the center of the upper surface of the rotary table 406 while the rotary table 406 is rotating, that is, while the cleaning process is being performed on the wafer W, so that the periphery of the rotary table 406 (the wafer W (Periphery of the wafer W) to the outside, it is possible to prevent particles and the like from entering the back surface of the wafer W. Therefore,
The contamination on the back surface of the wafer W can be prevented. Also,
The blown-in inert gas flows along the upper surface of the rotary table 406 to the periphery of the rotary table 406, so that the rotary table 406 also has a function as a gas diffusion plate. An exhaust port 412 is provided in a space between the cup 402 and the rotary driving body 404, and exhaust gas and exhaust gas containing waste liquid such as a cleaning liquid flows.

A holding member 52 for holding the wafer W is attached to the outer peripheral surface of the rotary table 406. The holding member 52 is attached to the turntable 406 by the support members 53 arranged on both sides thereof. In the present embodiment, three holding members 52 are attached, and the holding members 5
2 are mounted at equal intervals so as to have an angle of 120 degrees.

FIG. 6 is a schematic view of the holding member 52. FIG.
FIG. 6A is a side view in a state of being attached to the rotary table 406, and FIG. 6B is a front view of the holding member 52. As shown in FIG. 6, the holding member 52 includes a holding section 54 and a load applying section 55. The holding section 54 is formed above the holding member 52, and the load applying section 55 is formed below the holding member 52, and both are integrally formed.

A notch (step) having a changed gradient is formed in the holding portion 54, and the wafer W is held at the step. The holding portion 54 is formed in a convex shape when viewed from the front, and holds the wafer W by point contact at a step formed in the holding portion 54. In addition, the holding portion 54 is supported by a supporting member 5 by a rotation fulcrum 56 formed above the supporting member 53.
3 The holding member 52 is connected to the pivot 56
. The holding member 52, the support member 53, and the rotation fulcrum 56 constitute a holding unit.

The weight of the load applying section 55 is heavier than that of the holding section 54. This is because the wafer W is rotated at a high speed by the rotation driver 404, so that the wafer W is stably held. W
Is held. That is, the wafer W is placed on the holding member 52 in a state where the wafer W is not rotating, and is held by the holding portion 54. And the rotary table 40
6 is rotated, the centrifugal force acting on the load applying section 55 causes the load applying section 55 to move further outward, and as a result, the holding section 54 of the holding member 52 moves toward the center of the turntable 406. The wafer W is pushed and a load is applied to the wafer W. As described above, the load applying section 55 functions as a weight of the holding member 52.

Further, at least one of the load applying portions 55 is formed so that the load applied to the wafer W is different. For example, the weight of the load applying portion 55 of the holding member 52a in FIG. 5A is 10 g, and the weight of the load applying portion 55 of the other holding members 52 is 15 g. FIG.
FIG. 1 shows a schematic diagram for explaining the arrangement of the wafer W. FIG.
When the wafer W rotates, as shown in FIG.
The wafer W is slightly moved toward the holding member 52a due to the difference in the magnitude of the centrifugal force acting on the (load applying unit 55) (the center 71 of the wafer W and the rotation center axis 72 of the wafer W are slightly displaced). Rotate with. However, since the rotation is performed in a state where a load is applied to the holding member 52a, the rotation center axis 72 of the wafer W does not differ for each cleaning process, and the wafer W is stabilized in a state moved to the holding member 52a. Can rotate.

Above the rotary table 406, a main cleaning nozzle 414 and an edge cleaning nozzle 415 are provided. The main cleaning nozzle 414 is provided so that the outlet thereof blows out to the center 71 of the wafer W in a state where the wafer W is placed on the rotary table 406. Further, the main cleaning nozzle 414 is configured to be movable so as not to hinder the transfer of the wafer W by the second transfer mechanism 29.

The edge cleaning nozzle 415 is arranged so as to supply the cleaning liquid to a position farthest from the rotation center axis 72 of the wafer W while the wafer W is rotated. In the present embodiment, the cleaning liquid is arranged to be supplied to the holding members 52a having different loads applied to the wafer W. Further, the edge cleaning nozzle 415 moves the peripheral edge 73 of the wafer W by 30 ° C. in the vertical direction and 45 ° C. in the horizontal direction.
Are arranged at an angle. With such an angle, the cleaning liquid ejected from the edge cleaning nozzle 415 is less likely to scatter on the surface of the wafer W. The edge cleaning nozzle 415 is configured to be movable similarly to the main cleaning nozzle 414, and can perform cleaning with a desired cleaning width.

The cleaning liquid discharged from the edge cleaning nozzle 415 is a mixed liquid of an inorganic acid or an organic acid such as hydrofluoric acid, hydrochloric acid, sulfuric acid and the like and a hydrogen peroxide solution (H ₂ O ₂ ), for example.
A mixed solution of dilute hydrofluoric acid (DHF) and H ₂ O ₂ is used.

Next, a method of forming a Cu thin film on the wafer W using the plating system 11 configured as described above and cleaning the periphery of the wafer W will be described. In addition,
Each operation described below is controlled by a control device (not shown), and each operation is executed under the control of the control device.

First, the wafer W on which the seed layer has been formed is transferred from the wafer cassette 23a mounted on the mounting table 24 to the first
The sheet is transported by the transport mechanism 25 and placed on the placement unit 30. Next, the wafer W mounted on the mounting unit 30 is transferred by the second transfer mechanism 29 and transferred into the plating unit 26. The wafer W transferred to the plating unit 26 is
A plating process is performed on the surface, and a Cu thin film is formed on the surface of the wafer W (on the seed layer).

The wafer W on which the Cu thin film is formed is transported by the second transport mechanism 29 from the entrance 416 of the housing 401 into the cleaning / drying unit 27. At this time, the cup 402 is located at the lowest position, and the wafer W is
2 is placed. At this time, due to the weight of the wafer W,
The holding section 54 of the holding member 52 moves toward the center of the wafer W, and the wafer W is held by the holding member 52. Then, the second transport mechanism 29 retreats from the entrance 416 to the outside of the housing 401.

After the second transport mechanism 29 is retracted, the hollow motor 405 is started, and the rotary drive 404 rotates. Accordingly, the rotary table 406 rotates, and the holding member 52
The wafer W held by this also rotates. On this occasion,
Use a cup 40 so that the cleaning liquid does not scatter in the unit.
2 is raised by the cup drive 403 to the highest position 402 '.

When the wafer W rotates, the load applying unit 55 moves outward by the centrifugal force acting on the load applying unit 55, and the holding unit 54 moves toward the center of the wafer W. Therefore, a load is applied to the wafer W, and the wafer W is
4 is held.

Further, the load applying portion 55 of the holding member 52a
Is lighter than the weights of the other load applying parts 55, the wafer W rotates slightly moved to the holding member 52a due to the difference in the magnitude of the centrifugal force acting on the load applying part 55. In this state, the wafer W rotates with the center of the wafer W slightly shifted from the rotation center axis of the wafer W. As described above, since the wafer W always rotates while the load is applied to the holding member 52a, the wafer W can stably rotate while moving to the holding member 52a. For this reason, even if the cleaning process is performed on the wafer W, the position and the size to be cleaned can be made the same. Therefore, the cleaning process can be finely controlled.

FIG. 8 shows a cleaning sequence of the wafer W.
As shown in FIG. 8, the wafer W is rotated, and the rotation speed of the turntable 406 is increased to a predetermined rotation speed (for example, 200 to 30).
When the rotation reaches 0 rotations / minute (rpm), chemical cleaning is performed.

In the chemical cleaning, the back surface and the peripheral edge of the wafer W are cleaned, and first, pure water is supplied from the main cleaning nozzle 414. Subsequently, after reaching a state where pure water is sufficiently supplied on the surface of the wafer W, a cleaning liquid is supplied from the edge cleaning nozzle 415. The chemical cleaning is performed for a predetermined time (for example, about 30 minutes).
Second), and after the supply of the cleaning liquid from the edge cleaning nozzle 415 is stopped, the supply of pure water from the main cleaning nozzle 414 is stopped and the process ends. Here, the edge cleaning nozzle 415
Are arranged so as to supply the cleaning liquid to the holding member 52a having different loads applied to the wafer W, so that even if the width of the peripheral edge of the wafer W to be cleaned becomes narrow, the cleaning process is finely controlled. be able to.

Further, since the wafer W is held by the holding member 52, the holding portion of the wafer W that is not sufficiently cleaned by the edge cleaning nozzle 415 can be cleaned. Specifically, the cleaning of the holding portion of the wafer W is performed on the rotating table 4.
06 is rapidly changed, and the holding member 52 of the wafer W is changed.
This is done by shifting the portion held in
Such a change in the number of rotations of the rotary table 406 may be any change in the number of rotations at which the holding portion of the wafer W is displaced to such an extent that the edge cleaning nozzle 415 can wash the wafer W. You may.

After the chemical cleaning is completed, pure water cleaning is performed to clean both surfaces of the wafer W with pure water at the same rotation speed. The pure water cleaning is performed by the main cleaning nozzle 4 above the wafer W.
14 and pure water is supplied from the outlet 51 of the back surface cleaning nozzle 409 below the wafer W. This pure water cleaning
This is performed for a predetermined time (for example, about 40 seconds).

After the cleaning with pure water is completed, spin drying of the wafer W is performed. In this spin drying, the rotating table 4
06 is a predetermined rotation speed (for example, 2000 to 30).
00 rpm), and at the same time, N ₂ is supplied from the outlet 51 of the main cleaning nozzle 414 above the wafer W and the back surface cleaning nozzle 409 below the wafer W, and is performed for a predetermined time (for example, about 10 seconds).

After such cleaning and drying processing, the wafer W is transported out of the cleaning and drying unit 27 from the entrance of the housing 401 by the second transport mechanism 29. On this occasion,
The cup 402 is placed at the lowered position by the cup driving unit 403 so as not to hinder the transfer of the wafer W by the second transfer mechanism 29.

The wafer W transferred out of the cleaning / drying unit 27 is placed on the transfer mounting section 30 by the second transfer mechanism 29. Finally, the wafer W placed on the transfer mounting section 30 is stored in the wafer cassette 23b mounted on the mounting table 24 by the first transfer mechanism 25.

The present invention is not limited to the above-described embodiment. For example, at least one of the load applying portions 55 may be formed so that the load applied to the wafer W is different. The weight of the load applying portion 55 of the holding member 52a is 20 g, and the weight of the other load applying portions 55 is 15 g.
The weight of the load applying portion 55 of the holding member 52a may be increased by one so that the weight becomes g.

The number of the load applying portions 55 is not limited to three, but may be, for example, four or more. In this case, it is sufficient that at least one of the load applying units 55 is different in weight from the other load applying units 55, and for example, the weights of all the load applying units 55 may be different.

The load applying section 55 may be any as long as it can apply a load from the side of the wafer W, and is not limited to a centrifugal chuck.

The edge cleaning nozzle 415 is preferably arranged so as to supply the cleaning liquid to a position farthest from the rotation center axis of the wafer W in a state where the wafer W is rotated. What is necessary is just to arrange so that a washing | cleaning liquid can be supplied.

In this embodiment, the apparatus is configured such that the four plating units 26 are arranged in the lower stage, and two washing / drying units 27 and two extra units 28 are arranged in the upper stage. A device configuration is also possible. For example, a configuration in which four plating processing units 26 are provided in the lower stage, and one plating processing unit 26 and three cleaning / drying units 27 are provided in the upper stage is also possible.

In the present embodiment, the plating unit 26 for forming a Cu thin film on the wafer W and the cleaning / drying unit 27 for cleaning (removing) the Cu thin film on the periphery of the wafer W have been described. The present invention is not limited to this, and any material may be used as long as it can form a thin film on the object to be processed and wash (remove) the thin film on the periphery of the object.
Further, the object to be processed is not limited to a wafer.
It is also applicable to a glass substrate for a CD and the like.

[0071]

As described above, according to the present invention,
The cleaning of the periphery of the object can be finely controlled.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a plating apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic plan view of a plating apparatus according to an embodiment of the present invention.

FIG. 3 is a schematic side view of the plating apparatus according to the embodiment of the present invention.

FIG. 4 is a sectional view showing a cleaning and drying unit according to the embodiment of the present invention.

FIG. 5A is a schematic diagram illustrating a shape of a back surface cleaning nozzle, and FIG. 5B is a cross-sectional view illustrating a flow path in the back surface cleaning nozzle.

FIG. 6A is a side view of a state in which the holding member is attached to a rotary table, and FIG. 6B is a front view of the holding member.

FIG. 7 is a schematic diagram for explaining an arrangement of an edge cleaning nozzle.

FIG. 8 is a wafer cleaning sequence.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Plating apparatus 21 Cassette station 22 Processing station 23a, b Wafer cassette 24 Placement table 25 1st conveyance mechanism 26 Plating processing unit 27 Cleaning / drying unit 28 Extra unit 29 2nd conveyance mechanism 30 Mounting part 404 Rotary drive body 405 Hollow motor 406 Rotary table 415 Edge cleaning nozzle 52 Holding member 53 Support member 55 Load applying part 56 Rotating fulcrum 71 Center of wafer W 72 Rotation center axis of wafer W 73 Peripheral edge W Wafer

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yoshinori Marumo 650 Mitsuzawa, Hosaka-cho, Nirasaki-city, Yamanashi Pref. LA08 MA19

Claims (10)

[Claims] A plurality of holding members for holding the object by applying a load from a side of the object; rotating the holding member and the object held by the holding member; A liquid processing method for supplying a cleaning liquid to a peripheral portion of a processing object to clean a peripheral edge of the processing object, wherein at least one of the holding members is different in a load applied to the processing object. Holding the liquid. 2. The liquid according to claim 1, wherein the holding member holds the object to be processed in a state where the object is rotated so that the rotation center axis of the object is constant. Processing method. 3. The holding member holds the object to be processed so that the rotation center axis of the object is different from the center of the object.
The liquid processing method according to claim 1, wherein: 4. The apparatus according to claim 1, wherein the cleaning liquid is supplied to a peripheral edge of the processing object farthest from a rotation center axis of the processing object in a state where the processing object is rotated. 4. The liquid processing method according to any one of items 3 to 3. 5. A plurality of holding members for holding an object to be processed,
Holding means for holding the object by applying a load from the side of the object by the holding member; rotating means for rotating the object held by the holding means and the holding means; Cleaning means for supplying a cleaning liquid to the periphery of the object being rotated by the rotating means, wherein at least one of the holding members is configured such that a load applied to the object is a load applied to the object from another holding member. A liquid treatment apparatus characterized in that the load is different from a load applied to the liquid treatment apparatus. 6. A liquid processing apparatus according to claim 5, wherein said holding means comprises a plurality of centrifugal chucks, and said centrifugal chucks have weights having different weights. 7. The centrifugal chuck, wherein the weight of one centrifugal chuck is lighter than the weight of the other centrifugal chuck.
7. The liquid processing apparatus according to claim 5, wherein: 8. The cleaning device according to claim 1, wherein the cleaning unit is arranged so as to supply the cleaning liquid to a position farthest from a rotation center axis of the processing object in a state where the processing object is rotated. Item 8. The liquid processing apparatus according to any one of items 5 to 7. 9. A thin film forming apparatus for forming a thin film on an object to be processed, a liquid processing apparatus according to any one of claims 5 to 8,
A thin film forming system comprising: 10. The thin film forming system comprises a multi-chamber system, wherein the thin film forming apparatus and the liquid processing apparatus are arranged in each chamber of the multi-chamber system. 10. The thin film forming system according to 9.