JPH0992613A - Temperature conditioner and scanning aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control the temperature of a substrate effectively while preventing variation or fluctuation in the temperature of the peripheral air and substantially causing no problem of adhering particles. SOLUTION: The temperature conditioner comprises a radiation plate 23 disposed oppositely to a substrate R and the temperature of which can be controlled by a refrigerant (hot medium) flowing through a piping 24, an infrared ray transmission window 21 disposed oppositely to the radiation plate 23 through a vacuum layer 22, and a support 25 for supporting the radiation plate 23 and the window 21 integrally while insulating them thermally along with the vacuum layer 22. Since the temperature of the substrate R is conditioned by radiation through the radiation plate 23, adhesion of particles is substantially is eliminated and noncontact temperature control of the substrate R can be carried out effectively while preventing variation or fluctuation in the temperature of the peripheral air.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature controller and a scanning type exposure apparatus, and more specifically, a mask (reticle).
The present invention also relates to a temperature adjusting device suitable for adjusting the temperature of a substrate such as a wafer, and a scanning type exposure apparatus using this temperature adjusting device for adjusting the temperature of a mask.

[0002]

2. Description of the Related Art In recent years, as semiconductor integrated circuits have become finer, an exposure apparatus used in a lithography process for exposing and transferring a pattern of a mask (reticle) onto a substrate (wafer) coated with a photosensitive material (resist). Also, a highly accurate device is required, and in particular, very high accuracy is required with respect to alignment accuracy between layers of circuit elements. One of the factors that affect the alignment accuracy is pattern distortion caused by thermal expansion of the mask due to exposure light irradiation.

A mask of this type is generally a blank (flat plate) of fused silica having a pattern surface of chrome formed thereon. Therefore, the allowable error due to thermal expansion is 1 pp
m, the coefficient of thermal expansion of quartz is approximately 0.4 ppm /
Since the temperature is C, the allowable temperature rise of the mask is 2.5C. Since this type of exposure apparatus requires high throughput as well as accuracy, the illuminance of the exposure light tends to increase. Therefore, it becomes difficult to satisfy the required accuracy without actively controlling the temperature of the mask.

Conventionally, as a method of controlling the temperature of the mask, a method of blowing temperature-controlled air (gas) to the mask, a method of bringing a cooling plate into close contact with a region outside the exposure range of the mask, and the like have been proposed. There is.

[0005]

However, among the conventional mask temperature control methods described above, in the method of blowing temperature-controlled air, when the wind speed is increased to increase the heat transfer coefficient, particles (so-called dust) are wound up, This particle adheres to the mask, causing a defect in the circuit element, and as a result, the allowable wind speed is at most about 0.5 m / s,
The heat transfer coefficient in this case is almost the same as the natural convection heat transfer coefficient. In addition, recently, as a countermeasure against the particles, a frame having an appropriate height is often provided on the pattern surface (chrome surface) side of the mask, and a pellicle film is put on the frame. In such a case, the pattern surface of the mask cannot perform forced convection heat transfer, so that the efficiency of absorbing heat becomes worse. Furthermore, if air is blown carelessly, air fluctuations will increase, affecting the measurement accuracy of the position measuring laser interferometer used for position control of the mask stage,
There was also the inconvenience that the alignment accuracy deteriorated. In addition, there is also a disadvantage that mechanical vibration of each part is excited with the blowing of air and that there is a high possibility that the positioning accuracy is deteriorated.

On the other hand, in the method of mounting the cooling plate on the mask, for example, the method of controlling the mask temperature by controlling the temperature of the mask table (or the mask stage) on which the simplest mask is placed, Since the area of the adsorption surface where the stage adsorbs and holds the mask is very small, the thermal conductivity is small and it is difficult to effectively control the temperature. Further, if the temperature of the mask table is changed, the table may be deformed, which may deform the mask. Similarly, in the method in which a special cooling plate is prepared and attached to the mask, the area of the region other than the pattern surface of the mask is small in proportion, so that effective temperature control is difficult. Further, each time the mask is replaced, the cooling plate has to be attached to the mask, which causes a problem that the mask replacement time becomes long, and further, there is a problem that the mask may be deformed due to the stress caused by the mounting. Had.

The present invention has been made in view of the inconveniences of the prior art, and the first object thereof is to prevent the temperature change and fluctuation of the surrounding air with almost no particle adhesion problem. It is an object of the present invention to provide a temperature control device capable of effectively controlling the temperature of a substrate.

A second object of the present invention is a scanning type exposure which can prevent the occurrence of air fluctuations, the stress deformation of the mask, the increase of the mask replacement time, etc., with almost no particle adhesion problems. To provide a device.

[0009]

According to a first aspect of the present invention, there is provided a temperature adjusting device for adjusting the temperature of a substrate, comprising a radiation plate which can be arranged facing the substrate and which can be temperature controlled; An infrared transmission window disposed opposite to each other via a predetermined vacuum layer; and a heat insulating support body that integrally supports the radiation plate and the window and heat-insulates the radiation plate and the window and the vacuum layer.

According to this, when the substrate and the radiation plate are arranged to face each other, heat is transferred from the high temperature object side to the low temperature object side of the substrate and the radiation plate by radiation according to the temperature difference between them. Therefore, when it is desired to cool the substrate, the radiation plate may be set at a temperature lower than that of the substrate, and when it is desired to heat the substrate, the radiation plate may be set at a temperature higher than that of the substrate. Actually, the amount of radiant heat transfer from the high temperature object A to the low temperature object B is determined according to the following formula (1) (for details, see, for example, "Heat transfer engineering" (Brain book) by Hallman). The temperature of the radiation plate may be adjusted so that the substrate has a desired temperature based on the equation (1).

[0011]

[Equation 1]

According to the temperature control device of the first aspect,
Since the temperature of the substrate is adjusted by radiant heat transfer, there is almost no particle adhesion problem, while the temperature change and fluctuation of the surrounding air are prevented, and the temperature of the substrate can be controlled effectively without contact. Can be done. Further, since a predetermined vacuum layer exists between the radiation plate and the infrared transmission window, dew condensation on the radiation plate can be prevented when the substrate is cooled, and the heat insulating support serves to transfer heat to the atmospheric gas. Can be suppressed.

According to a second aspect of the present invention, in the temperature control apparatus according to the first aspect, a semiconductor Peltier element for controlling the temperature of the radiation plate is further included.

According to this, for example, when the substrate is cooled, the temperature of the radiation plate, and hence the amount of heat transferred from the substrate to the radiation plate, can be controlled with high responsiveness by controlling the current flowing through the semiconductor Peltier element. it can.

[0015] The third aspect of the present invention is the first or second aspect.
In the temperature control device according to the aspect 1, the temperature of the infrared transmission window can be controlled. Specifically, for example, by embedding a heater or a transparent thin film circuit heating element in the infrared transmissive window, the infrared transmissive window itself can be temperature-controllable.

According to this, it becomes possible to control the temperature of the infrared transmitting window so as to be substantially the same as the temperature of the atmospheric gas, and thereby it is possible to almost completely prevent convection in the atmospheric gas. Therefore, it is possible to minimize the influence on the measurement accuracy of sensors such as a laser interferometer.

According to a fourth aspect of the present invention, the mask is illuminated by an illuminating means, and the mask stage holding the mask and the substrate stage holding the photosensitive substrate are synchronously scanned in a predetermined scanning direction while the mask is being scanned. A scanning exposure apparatus for transferring an image of a pattern of an upper illuminated area onto the photosensitive substrate via a projection optical system, which has a radiation cooling plate for controlling the temperature of the mask.

According to this, by controlling the amount of heat transferred from the mask to the radiation cooling plate by changing the surface temperature of the radiation cooling plate, the mask can be cooled by the radiation heat transfer. As described above, the problem of particle adhesion to the mask is not caused, and air fluctuations do not significantly affect sensors such as laser interferometers. Further, since it is a completely non-contact type, it is unlikely that the disadvantages such as the contact type cooling plate that causes stress deformation of the mask and that the mask replacement time increases. Further, even a mask provided with a pellicle can be easily cooled.

In the scanning type exposure apparatus according to the fourth aspect, as in the invention according to the fifth aspect, the radiation cooling plate is provided with exposure light between the mask and the projection optical system or between the illumination means and the mask. It is desirable that the mask is arranged so as to face the mask in a region that does not block the light.

With this arrangement, the mask can be efficiently cooled by the radiation cooling plate without affecting the performance.

The invention described in claim 6 is the invention according to claim 4 or 5
In the scanning type exposure apparatus described in (1), the amount of heat given to the mask during exposure is predicted, and based on this, the temperature of the mask is transferred from the mask to the radiation cooling plate so as to stay within a predetermined allowable range. It is characterized by further comprising temperature control means for determining a heat flow target value and controlling the temperature of the radiation cooling plate so that the heat flow rate becomes the target value.

According to this, the temperature control means predicts the amount of heat given to the mask during the exposure, and based on this, the temperature of the mask is transferred from the mask to the radiation cooling plate so as to remain within a predetermined allowable range. Set the heat flow target value,
The temperature of the radiation cooling plate is controlled so that the heat flow rate becomes the target value. Therefore, by changing the surface temperature of the radiation cooling plate according to the amount of heat applied to the mask, it becomes possible to easily control the fluctuation of the mask temperature within a certain allowable range.

In the scanning exposure apparatus according to the sixth aspect, the temperature control means has at least the illuminance of the exposure light on the mask, the aperture ratio of the mask, and the reflection of the mask as in the invention according to the seventh aspect. The amount of heat applied to the mask may be predicted by calculating the exposure energy based on information such as the rate and the exposure time ratio, or at least the measured mask may be calculated as in the invention according to claim 8. The amount of heat given to the mask may be predicted based on the temperature information.

According to a ninth aspect of the present invention, in the scanning exposure apparatus according to any one of the fourth to eighth aspects, the infrared exposure window and the heat insulating support are further provided, and the radiation cooling plate is provided. Configures the temperature controller according to claim 1 together with the infrared transmitting window and the heat insulating support.

According to this, as in the first aspect of the invention, since a predetermined vacuum layer exists between the radiation cooling plate and the infrared transmitting window, the dew condensation on the radiation cooling plate for cooling the mask is prevented. In addition to being able to prevent, heat transfer to the atmospheric gas can be suppressed by the function of the heat insulating support.

In the invention described in claim 9, a semiconductor Peltier device for controlling the temperature of the radiation cooling plate may be provided. In such a case, the temperature of the radiation cooling plate, and hence the amount of heat transferred from the mask to the radiation cooling plate, can be controlled with high response by controlling the current flowing through the semiconductor Peltier element.

In the invention described in claim 9, the infrared transmitting window may be temperature controllable.
By doing so, it is possible to almost completely prevent convection from occurring in the atmospheric gas by controlling the temperature of the infrared transmitting window to be substantially the same as the temperature of the atmospheric gas. It is possible to minimize the influence of the sensors on the measurement accuracy.

According to a tenth aspect of the present invention, in the scanning exposure apparatus according to any one of the fourth to ninth aspects,
The surface of the component other than the mask facing the radiation cooling plate is set to have a high reflectance in the infrared region.

According to this, the amount of radiant heat transferred from the component other than the mask facing the radiation cooling plate, for example, the mask stage to the radiation cooling plate is reduced, and the mask stage is carelessly cooled. Can be suppressed, for example, the influence on the running accuracy of the mask stage.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 shows a schematic structure of a scanning type exposure apparatus according to one embodiment. In FIG. 1, on a wafer stage guide plate 10 placed substantially horizontally on a vibration isolation table (not shown), an X-axis direction (left and right direction in FIG. 1) and a Y-axis direction (in FIG. 1) orthogonal to the X-axis direction. (Orthogonal to the page)
A wafer stage 9 is mounted as a substrate stage that is movable in the two-dimensional direction. A wafer W as a photosensitive substrate is held on the wafer stage 9 via a wafer holder (not shown). A movable mirror 11 for a laser interferometer is provided on the wafer stage 9, and a laser interferometer 12 is arranged on the wafer stage guide plate 10 so as to face the movable mirror 11. The laser interferometer 12 measures the position of the wafer stage 9 by irradiating the moving mirror 11 with laser light (length measuring beam) and receiving the reflected light from the moving mirror 11. The output of the laser interferometer 12 is input to the stage drive control means 15.

Actually, the X-axis moving mirrors 11X and Y are used.
A movable mirror 11Y for the axis is provided, and X corresponding to these is provided.
Although an axial position measuring laser interferometer 12X and a Y-axis position measuring laser interferometer 12Y are provided, they are typically shown as a movable mirror 11 and a laser interferometer 12 in FIG.

A projection optical system PL is arranged above the wafer W with its optical axis direction directed in the Z-axis direction orthogonal to the XY plane which is the moving surface of the wafer stage 19. Further, above the projection optical system PL, a reticle R as a mask is arranged substantially parallel to the moving surface of the wafer stage 19. This reticle R is formed by forming a thin film of chromium on planks of fused quartz and then etching-etching an original image of a circuit pattern on the thin film of chromium. This reticle R has the above-mentioned chromium thin film surface (hereinafter referred to as “pattern surface PA”).
Is referred to as the projection lens side (lower side) and is held on the reticle fine movement stage 2 by vacuum suction. The reticle fine movement stage 2 is used for fine movement in the XY two-dimensional directions and Z movement.
Micro rotation around the axis is possible. The reticle fine movement stage 2 is mounted on a reticle scanning stage 3 which is movable along the X-axis direction (scanning direction). The reticle scanning stage 3 moves on the scanning stage guide plate 4 in the X-axis direction. The reticle R is scanned by being driven along. That is, in this embodiment, the reticle fine movement stage 2 and the reticle scanning stage 3 are
And form a reticle stage as a mask stage.

Now, the reticle stage section will be described in more detail with reference to the plan view of FIG. 2. The reticle R has four small area vacuum suction sections 2 on the reticle fine movement stage 2.
It is adsorbed and held by a. In FIG. 2, a hatched portion with a fine diagonal line indicates the maximum range of the exposureable area. At one end of the reticle fine movement stage 2 in the X direction, a pair of corner cube mirrors 5a are arranged at predetermined intervals,
5b is provided, and laser interferometers 6X ₁ and 6X ₂ are arranged at one end in the X direction of the scanning stage guide plate 4 facing them. A bar mirror 5c is arranged along the X-axis direction at one end of the reticle fine movement stage 2 in the Y direction, and a laser interferometer 6Y is arranged opposite to the bar mirror 5c. Then, the laser interferometers 6X ₁ and 6X ₂ measure the position of the reticle fine movement stage 2 in the X direction and the rotation about the Z axis via the corner cube mirrors 5a and 5b,
The laser interferometer 6Y measures the position of the reticle fine movement stage 2 in the Y direction via the bar mirror 5c. These laser interferometers 6X ₁ , 6X ₂ , 6Y
Is also input to the stage drive control means 15. In FIG. 1, the corner cube mirrors 5a and 5b and the bar mirror 5c are representatively shown as the mirror 5, and the laser interferometers 6X ₁ , 6X ₂ and 6Y are representatively shown as the laser interferometer 6.

As shown in FIG. 2, movers 3a and 3a of linear motors extending in the X direction are respectively provided at both ends of the reticle scanning stage 3 in the Y direction, and a pair of moving units 3a extending in the X direction are correspondingly provided. Linear motor stators (X linear guides) 3b and 3b are provided. With such a configuration, the reticle scanning stage 3 is driven to scan on the scanning stage guide plate 4 along the X direction by the stage drive control means 15 that drives a linear motor.

Returning to FIG. 1, an illumination optical system 13 as illumination means is provided above the reticle R, and exposure light EL from a light source such as a high pressure mercury lamp or an excimer laser (not shown) is used.
The reticle R is illuminated by. The illumination area on the reticle R has a rectangular slit shape in this embodiment (see FIG. 2), and the long sides of this illumination area are indicated by reference characters A and B in FIGS. 1 and 2.

The stage drive control means 15 synchronously scans the reticle scanning stage 3 and the wafer stage 9 in the illumination area on the slit along the X direction at a speed ratio corresponding to the projection magnification of the projection optical system PL. Then, the entire surface of the reticle R pattern is exposed and transferred onto the wafer W. The wafer stage 9 is sequentially step-fed, and the pattern of the reticle R is arranged and transferred onto the entire surface of the wafer W in a matrix form in the XY directions.

Further, in this embodiment, temperature control devices 19a and 19b provided with a cooling plate below the reticle scanning stage 3 so as to face the pattern surface PA of the reticle R.
Is arranged. The temperature control devices 19a and 19b sandwich the illumination area (between AB) so as not to block the light incident on the projection optical system PL from the illumination area (between AB), and guide the scanning stage substantially in the front-back direction in the scanning direction. It is installed near the plate 4 at a height that does not hinder the movement of the stage 3. Further, the lengths of the cooling plates forming the temperature control devices 19a and 19b in the scanning direction are determined based on the moving range of the reticle R.

FIG. 3 shows the structure of one temperature control device 19a. The temperature control device 19a includes a radiation cooling plate 23 as a radiation plate arranged to face the mask pattern surface PA, and an infrared transmission window 21 arranged to face the radiation cooling plate 23 and near the reticle R.
A heat insulating support 25 is provided for holding the two 23, 21 integrally and for insulating the space between them and the space 22 between them. Radiant cooling plate 23 and infrared transmitting window 21
The space 22 between and is a vacuum heat insulating layer. That is, the temperature controller 19a employs a layered structure including the radiation cooling plate 23, the vacuum heat insulating layer 22, and the infrared transmitting window 21. This is because by adopting such a layer structure, heat transfer to the atmospheric gas is reduced and the temperature controllability of the radiation cooling plate 23 is improved. Further, the presence of the vacuum heat insulating layer can prevent dew condensation on the radiation cooling plate 23. The infrared transmission window 21
It is desirable to embed a heater or a transparent thin-film circuit heating element in the device so that the temperature of the infrared transmitting window 21 itself can be controlled.

If the temperature of the infrared transmitting window 21 itself can be controlled, it is possible to prevent convection in the atmospheric gas by controlling the temperature of the atmospheric gas and the temperature of the infrared transmitting window 21 to be substantially the same. This is because it is possible to minimize the influence on the measurement accuracy of a sensor such as a laser interferometer.

The radiation cooling plate 23 is used for the cooling pipe 2
It is designed to be cooled by heat exchange with the refrigerant passing through the inside of No. 4. The temperature of the radiation cooling plate 23 is monitored by the temperature sensor 26, and the temperature signal is transmitted to the temperature controller 16 shown in FIG. 1 and controlled to a target value as described later. . The temperature control of the radiant cooling plate 23 can be achieved by changing the temperature of the refrigerant, and a semiconductor Peltier element (not shown) is installed between the radiant cooling plate 23 and the refrigerant, and the current flowing through the semiconductor Peltier element is controlled. It can also be achieved by actively controlling the amount of heat transfer. In the latter case,
There is an advantage that the temperature control response of the radiation cooling plate 23 becomes faster.

The other temperature control device 19b is also the temperature control device 19
It is constructed in the same manner as a. These temperature control devices 19
Since the radiation cooling plates 23a and 19b are arranged so as to face the pattern surface PA of the reticle R, the reticle R that has become high temperature by absorbing the energy of the exposure light is so-called by the temperature control devices 19a and 19b. It is cooled by radiant heat transfer.

Here, it is known that the radiant heat transfer amount q between A and B and two objects is expressed by the above-mentioned formula (1), and the view factor in the formula (1) is 1 or less. Is the number of
In the case of heat transfer between rectangular flat plates as in this embodiment, the value of the view factor approaches 1 as the ratio of the length of the sides of the rectangle to the distance between the flat plates increases. In the scanning type exposure apparatus, the illumination area of the mask is often slit-like as in the present embodiment, and the radiation cooling plate 23 is placed under the reticle R as shown in FIG. In the case where the reticle scanning stage 3 is arranged, the radiation cooling plate 23 can be always kept relative to the entire area of the reticle R by about 2/3 regardless of the position of the reticle scanning stage 3 in the scanning range. is there. Therefore, the view factor can be easily set to a value of about 0.2.

Returning to FIG. 1, the control system of the temperature control devices 19a and 19b will be described. This control system mainly includes a central processing unit 18 and a cooling plate temperature controller.

A beam splitter (not shown) is arranged at the exit of a fly-eye optical system (not shown) which constitutes the illumination optical system 13. Part of the exposure light reflected by this beam splitter is monitored by a power monitor (not shown). The light quantity (illuminance) is detected by the power monitor. The illuminance signal S1 output from the power monitor is input to the illumination system controller 17 and the central processing unit 18. Lighting system control unit 1
At 7, the operation of a shutter (not shown) in the illumination optical system 13 is controlled based on the light quantity value S1.

A radiation thermometer 14 for measuring the temperature of the reticle R in a non-contact manner is arranged above the reticle R.
The measured value (temperature signal) S2 of the radiation thermometer 14 is input to the central processing unit 18.

In the internal memory of the central processing unit 18,
Information about the reticle R, pattern aperture ratio, pattern reflectance (or absorptance), emissivity, distance d between the reticle R and the radiation cooling plate 23, length LX of the radiation cooling plate 23 in the scanning direction, and also orthogonal to the scanning direction. Geometrical information such as the length LY in the direction of movement and data such as a view factor from the reticle R to the radiation cooling plate 23 are stored in advance.

Next, the operation of this embodiment will be described.
When the exposure operation is started, the shutter operation in the illumination optical system 13 and the illumination illuminance (exposure power) are controlled by the illumination system controller 17. The illumination illuminance is constantly monitored by a power monitor (not shown), and the signal S1 thereof is sent to the central processing unit 18. The temperature of the reticle R is
The temperature signal S2 is monitored by the radiation thermometer 14 and sent to the central processing unit 18.

The central processing unit 18 predicts the amount of heat given to the reticle R based on the information about the reticle R and the illuminance signal S1 and the temperature signal S2 which are input in advance, and this amount of heat Q is the reticle during radiation cooling. The temperature target value of the (radiation cooling plate 23) of the temperature control devices 19a and 19b is determined by using the above mathematical formula so that the heat quantity q given to the radiation cooling plate 23 from R matches, and the temperature control device controller The command value is transmitted to 16.

Thus, the temperature of the radiant cooling plate 23 is controlled by the temperature controller 16 and the temperature of the reticle R is adjusted to fall within a predetermined range. That is, in this embodiment, the reticle R is exposed during exposure by the functions of the temperature controller controller 16 and the central processing unit 18.
The amount of heat given to the reticle R based on this
The reticle R so that the temperature of the
The temperature control means determines a heat flow rate target value to be transmitted from the radiant cooling plate 23 to the radiant cooling plate 23, and controls the temperature of the radiant cooling plate 23 so that the heat flow rate becomes the target value.

In this embodiment, since the temperature of the reticle R is measured by the radiation thermometer 14, the amount of heat given to the reticle R can be easily predicted based on this temperature. However, the radiation thermometer 14 is not always required. There is no need to provide it.
That is, since the illuminance signal S1 from the power monitor is given to the central processing unit 18, the central processing unit 18 easily calculates the exposure time ratio (duty ratio for opening and closing the shutter) based on the illuminance signal S1. The exposure energy can be calculated based on this, the known illuminance, and the data such as the pattern aperture ratio and the reflectance of the reticle R, and the amount of heat given to the reticle R can be predicted based on this. is there.

As described above, according to this embodiment,
The amount of radiation heat transferred from the reticle R to the radiation cooling plate 23 is controlled by changing the temperature of the surface of the radiation cooling plate 23 according to the amount of heat given to the reticle R (energy of the exposure light absorbed by the reticle R). , Reticle R
The temperature fluctuation can be easily controlled within a certain allowable range. Therefore, the reticle R (mask) is suitable for a lithography process such as ULSI in which thermal deformation is hardly permitted.

Further, since the radiant heat transfer is used, air fluctuations are not generated, and there is no problem of particle adhesion such as in the blast cooling method and no influence on sensors such as laser interferometers. Further, since it is a completely non-contact system, there is no inconvenience of stress deformation of the reticle R and increase in reticle replacement time, unlike the contact cooling plate. Also,
The effect is almost the same even for a reticle (mask) with a pellicle installed.

Since the lower surface of the reticle scanning stage 3 faces the cooling plate 23 during scanning movement, the temperature may change, which may affect the running accuracy of the reticle scanning stage 3. In order to prevent such inconvenience, it is desirable that the lower surface of the reticle scanning stage 3 be vapor-deposited with aluminum or gold to be mirror-finished. If you do this,
When the radiation coefficient is about 0.05 or less, the amount of radiant heat transfer is reduced, and the influence of cooling can be minimized.

In the above embodiment, the temperature control device 19a,
Although the case where 19b is arranged between the reticle R and the projection optical system PL has been illustrated, the present invention is not limited to this, and, for example, as shown in FIG.
The temperature control devices 19a and 19b may be installed between the reticle R and the reticle R so that the radiation cooling plate 23 faces the reticle R so as to sandwich the illumination region. Even in this case, the same operation and effect as those of the above-described embodiment can be obtained.

Although the temperature control device according to the present invention is used for temperature control of the reticle R as a mask in the above embodiment, the application of the temperature control device according to the present invention is not limited to this. Not something. For example, when a wafer is loaded onto the wafer stage from the wafer autoloader, if the temperature of the exposure apparatus, especially the temperature of the wafer holder and the temperature of the wafer are different, the wafer may be deformed due to the temperature change. It is desirable to adjust the temperature to the same temperature as that of the exposure apparatus in advance before carrying it into the exposure apparatus. The temperature adjusting device according to the present invention can be suitably applied to such preliminary wafer temperature adjustment. Even in such a case, it is possible to prevent particles from adhering to the wafer.

Further, in the above embodiment, the optical exposure apparatus using a mercury lamp or the like as an exposure light source is exemplified, but the present invention is not limited to this, and, for example,
Also in the X-ray exposure apparatus, the electron beam exposure apparatus, etc., the thermal deformation of the mask similarly poses a problem, and the temperature control apparatus by the radiant heat transfer method of the present invention is suitable for preventing the thermal deformation of the mask of the exposure apparatus. Therefore, the scanning type exposure apparatus according to the present invention also includes an X-ray exposure apparatus and an electron beam exposure apparatus.

Although the radiation thermometer is used as the temperature sensor for measuring the temperature of the mask in the above embodiment, the present invention is not limited to this, and a temperature sensor of another type, for example, a platinum sensor is used. It is also possible to use a contact temperature sensor such as a temperature resistor or an IC temperature sensor. However, when the radiation thermometer is used, there is an advantage that it has little influence on the target object because it is non-contact and an error hardly occurs.

[0059]

As described above, according to the temperature control device of the present invention, the temperature change and fluctuation of the surrounding air can be prevented with almost no particle adhesion problem.
There is an unprecedented excellent effect that the temperature of the substrate can be effectively controlled.

Further, according to the scanning type exposure apparatus of the present invention, the occurrence of air fluctuations is prevented, the stress deformation of the mask and the increase of the mask replacement time are prevented with almost no particle adhesion problem. It has an excellent effect that is not possible in the past.

Particularly, according to the scanning type exposure apparatus of the sixth to eighth aspects, the temperature control means controls the surface temperature of the cooling plate according to the amount of heat given to the mask (energy of the exposure light absorbed by the mask). By changing it, the fluctuation of the mask temperature can be easily controlled within a certain allowable range. Therefore, even a slight thermal deformation of the mask is not allowed U
There is also an advantage that it can be suitably applied to a lithography process such as LSI.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic configuration of a scanning exposure apparatus according to an embodiment.

FIG. 2 is a schematic plan view showing the arrangement of peripheral members of the mask stage of FIG.

FIG. 3 is a schematic vertical cross-sectional view showing the configuration of the temperature control device of FIG.

FIG. 4 is an explanatory diagram showing a configuration of a main part of a modified example.

[Explanation of symbols]

 2 Reticle fine movement stage (part of mask stage) 3 Reticle scanning stage (part of mask stage) 9 Wafer stage (substrate stage) 13 Illumination optical system (illumination means) 16 Temperature controller (part of temperature control means) 18 Central processing unit (a part of temperature control means) 19a, 19b Temperature control device 21 Infrared transmission window 23 Radiant cooling plate (radiation plate) 24 Vacuum layer 25 Insulating support. R reticle (mask) W wafer (photosensitive substrate) PL projection optical system

Claims (10)

[Claims] 1. A temperature control device for adjusting the temperature of a substrate, comprising: a radiation plate which can be placed opposite to the substrate and whose temperature can be controlled; and infrared radiation which is placed opposite to the radiation plate via a predetermined vacuum layer. A temperature control device comprising: a window; and a heat insulating support for integrally supporting the radiation plate and the window and insulating the vacuum layer and the vacuum plate from each other. 2. The temperature controller according to claim 1, further comprising a semiconductor Peltier element for controlling the temperature of the radiation plate. 3. The temperature control device according to claim 1, wherein the infrared transmission window is capable of temperature control. 4. A mask is illuminated by an illuminating means to synchronously scan a mask stage holding the mask and a substrate stage holding the photosensitive substrate along a predetermined scanning direction,
A scanning exposure apparatus for transferring an image of a pattern of an illumination region on the mask onto the photosensitive substrate via a projection optical system, the scanning exposure apparatus having a radiation cooling plate for controlling the temperature of the mask. 5. The radiation cooling plate is arranged to face the mask in a region that does not block exposure light between the mask and the projection optical system or between the illumination unit and the mask. The scanning exposure apparatus according to claim 4, wherein: 6. A heat flow target value to be transferred from the mask to the radiation cooling plate so that the amount of heat given to the mask during exposure is predicted, and based on this, the temperature of the mask is kept within a predetermined allowable range. 6. The scanning exposure apparatus according to claim 4, further comprising temperature control means for controlling the temperature of the radiation cooling plate so that the heat flow rate becomes the target value. 7. The temperature control means calculates the exposure energy based on at least information such as the illuminance of the exposure light on the mask, the aperture ratio of the mask, the reflectance of the mask, and the exposure time ratio. The scanning exposure apparatus according to claim 6, wherein the amount of heat applied to the mask is predicted. 8. The scanning exposure apparatus according to claim 6, wherein the control means predicts the amount of heat applied to the mask based on at least information on the measured temperature of the mask. 9. The temperature control device according to claim 1, further comprising the infrared transmitting window and the heat insulating support, and the radiation cooling plate constitutes the temperature control device according to claim 1 together with the infrared transmitting window and the heat insulating support. 9. The scanning type exposure apparatus according to claim 4. 10. The scanning according to claim 4, wherein the surface of the component other than the mask facing the radiation cooling plate is set to have a high reflectance in the infrared region. Type exposure equipment.