JP2006105789A - Temperature-measuring device and exposure device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature-measuring device capable of performing precise temperature measurement of a wafer in the noncontact state, using an simple constitution. <P>SOLUTION: This temperature-measuring device is characterized by having a detector for detecting the radiation energy radiated from the substrate surface, and a radiation energy shielding part arranged on the back side of the substrate, for reducing the radiation energy reaching the detector from members other than the substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to a temperature measurement apparatus, and more particularly to a non-contact type temperature measurement apparatus used for temperature control of a wafer in a semiconductor exposure apparatus that exposes a semiconductor wafer in a vacuum atmosphere and an exposure apparatus using the same About.

  Currently, with respect to the manufacture of semiconductor devices such as DRAMs and MPUs, research and development has been conducted energetically toward the realization of devices having a line width of 0.1 μm or less by design rules. An exposure apparatus used for manufacturing this generation of semiconductor devices is expected to use an electron beam (EB), extreme ultraviolet light (EUV), or the like as the exposure light. In the EB exposure apparatus and EUV exposure apparatus, since exposure in the atmosphere is impossible, exposure is performed in a vacuum.

  In the EB exposure apparatus and EUV exposure apparatus, since the exposure operation is performed in a vacuum, the wafer is loaded and unloaded through the load lock chamber. The load lock chamber of the exposure apparatus has a function of receiving a wafer under atmospheric pressure, evacuating the chamber, and then opening the door on the exposure apparatus side to carry the wafer into the exposure apparatus side. Therefore, when the inside of the load lock is evacuated, the temperature of the gas decreases due to the adiabatic expansion of the internal gas, and the wafer temperature decreases several degrees from the reference temperature of the exposure apparatus, depending on the size of the chamber and the exhaust speed To do.

  In general, in a lithography process line, a resist is applied to a wafer and then baked (heated at 100 to 200 ° C. for several tens of minutes), and further cooled, is connected to an exposure apparatus. Therefore, if the wafer is carried into the exposure apparatus via the load lock with insufficient temperature control accuracy, the wafer may not enter the reference temperature range of the exposure apparatus. In particular, once the wafer is carried into the vacuum chamber, heat conduction and heat transfer with the surrounding atmosphere cannot be expected, and thus the wafer remains deviated from the reference temperature.

  Thus, when a wafer that is not within the reference temperature range of the exposure apparatus is loaded into the exposure apparatus and held on the wafer chuck, the alignment operation or exposure is being performed depending on the temperature difference between the wafer and the chuck. In addition, the wafer expands or contracts while sliding on the chuck until the temperature of both reaches equilibrium. Since sliding friction is generally non-linear behavior, it is very difficult to predict the deformation behavior in advance and correct the alignment measurement value, target shot coordinates, and the like. Therefore, when exposure is performed in this state, a large arrangement error occurs.

  Conventionally, proposals have been made to provide a mechanism for controlling the temperature of a wafer in a load lock chamber as a countermeasure against such a problem. For example, there are a method of heating with an infrared lamp, a method of controlling the temperature by heat conduction by sandwiching a wafer between two constant temperature plates, or a method of providing a temperature control function to the wafer holding mechanism in the load lock. In addition to the wafer stage in the exposure apparatus, a method of providing a dedicated temperature adjustment port for adjusting the temperature of the wafer has also been proposed.

  The wafer is carried into the exposure apparatus, and is attracted and held by the chuck on the wafer stage, and then irradiated with exposure light. When a part of the energy is absorbed by the wafer, the temperature of the wafer rises. Under a vacuum environment, the heat tends to rise because heat cannot be expected to the atmosphere around the wafer. Also, an electrostatic chuck is used in a vacuum environment, but this electrostatic chuck has a problem of heat generation when energized, which also causes an increase in wafer temperature. Even when the temperature rises after the wafer is held by the wafer chuck, a temperature difference occurs between the wafer and the chuck as in the case described above, so that the wafer remains on the chuck until the temperature of both reaches an equilibrium during exposure. The problem of expanding while sliding.

As a countermeasure against this problem, many methods have been proposed in which a wafer chuck is provided with a function of controlling the temperature of the wafer. For example, it is a method as described in Patent Documents 1 to 3, specifically, a method of flowing a temperature-controlled gas between wafer chucks, a method of adjusting the temperature by incorporating a Peltier element in the wafer chuck, Alternatively, there is a method of circulating a pipe in the wafer chuck and circulating a temperature-controlled gas or liquid therein.
JP 09-092613 A (mainly described in FIG. 4 and paragraphs 0055 to 0056) Japanese Patent Laid-Open No. 11-026370 JP 2002-305238 A

  As described above, various methods have been proposed for wafer temperature control depending on the temperature control location, but all of them have been insufficient for wafer temperature measurement when the temperature of the wafer is controlled. There are two temperature measurement methods for contact temperature measurement and contactless measurement. In the case of contact-type temperature measurement, there is a problem that contact of the sensor unit with the wafer leads to generation of particles. Furthermore, because it is a contact type, it is difficult to keep the thermal resistance at the contact interface constant at all times, making accurate measurement impossible, or depending on the heat capacity of the thermometer, temperature distribution may occur in the wafer surface. Problems also arise.

  For non-contact temperature measurement, a radiation thermometer is usually used. The radiation thermometer detects infrared radiation energy and converts it into temperature. As can be seen from FIG. 4, the center wavelength of blackbody radiation around 296 K, which is the reference temperature of the exposure apparatus, is 5 to 15 μm. However, silicon has transparency in the wavelength range of 5 to 10 μm. For example, in a silicon wafer having a thickness of 0.725 mm, the average transmittance of light having a wavelength of 5 to 10 μm is about 0.8 to 0.9. Therefore, when the temperature of the silicon wafer is measured with a radiation thermometer without taking any measures, the radiation energy from the measurement surface (hereinafter referred to as the first surface) of the wafer and the opposite surface (hereinafter referred to as the second surface). Therefore, it becomes difficult to measure the precise temperature of the wafer.

  As a countermeasure, a method of providing a band cut filter for cutting infrared rays in the background environment on the second surface side of the wafer to avoid the measurement wavelength of the radiation thermometer can be considered. However, when this filter fluctuates in temperature, there is a problem that it is also the sum of the wafer temperature measurement results. In addition, it is possible to use a filter that eliminates the influence of the background environment on the infrared incident window of the radiation thermometer, but there is also a problem that the radiant energy intensity becomes weak and the S / N ratio deteriorates.

  Accordingly, an object of the present invention is to provide a temperature measuring apparatus that performs non-contact precise temperature measurement of a wafer with a very simple configuration.

  A temperature measuring apparatus according to one aspect of the present invention includes a detector that detects radiant energy radiated from the surface of a substrate, and radiation that is disposed on the back side of the substrate and reaches the detector from a member other than the substrate. And a radiant energy shielding part for reducing energy.

  An exposure apparatus according to another aspect of the present invention includes an illumination optical system that guides exposure light from an exposure light source to a reticle, a reticle drive system that drives the reticle, and a projection optical system that projects a pattern on the reticle onto a substrate. And a substrate driving system for driving the substrate and the above-described temperature measuring device. According to still another aspect of the present invention, there is provided a device manufacturing method including a step of projecting and exposing a pattern onto a substrate by the exposure apparatus, and a step of developing the exposed substrate.

  Other objects and further features of the present invention will be made clear by embodiments described below with reference to the accompanying drawings.

  According to the present invention, since infrared rays received from other than the substrate surface can be reduced, the temperature of the substrate can be detected with high accuracy.

  First, an exposure apparatus having the temperature measuring apparatus of this embodiment will be described with reference to the drawings. FIG. 3 is a main part configuration diagram showing a schematic configuration of a semiconductor projection exposure apparatus (EUV exposure apparatus) using EUV light (light having a wavelength of 13 to 15 nm) as an exposure light source. In FIG. 3, reference numeral 1 denotes a wafer, reference numeral 2 denotes a reflective mask (reticle) on which an electronic circuit pattern is formed, and reference numeral 3 denotes a mask stage for holding the reflective mask and performing coarse and fine movement in the scanning direction. is there. Reference numeral 5 denotes a projection optical system for projecting and exposing the EUV reflected light from the reflective mask 2 onto the wafer 1. Reference numeral 6 denotes a wafer stage that holds the wafer 1 and can be moved coarsely and finely in six axial directions, and its xy position is constantly monitored by a laser interferometer (not shown). Normally, the scanning operation of the mask stage 3 and the wafer stage 6 is performed when the reduction magnification of the projection optical system 5 is 1 / β, the scanning speed of the mask stage is Vr, and the scanning speed of the wafer stage is Vw. In the meantime, synchronous control is performed so that the relationship of Vr / Vw = β is established.

  Reference numeral 8 is a transfer hand for loading and unloading a wafer between the load lock chamber 15 and the wafer temperature adjustment port 16, and reference numeral 18 is a transfer for loading and unloading the wafer between the wafer temperature adjustment port 16 and the wafer stage 6. It is a hand. The above-described unit is disposed in the exposure apparatus chamber 4, and the exposure apparatus chamber 4 is evacuated to perform exposure. Reference numeral 7 denotes a vacuum pump for evacuating the chamber. Reference numeral 9 is a vacuum pump for evacuating the load lock chamber 15, reference numeral 10 is a vacuum breaking valve for returning the vacuum state in the load lock chamber 15 to atmospheric pressure, and reference numeral 11 is an exposure apparatus chamber 4 and a load lock chamber. Reference numeral 12 denotes an apparatus side gate valve that partitions the space between the load lock chamber 15 and a wafer exchange chamber that will be described later. Reference numeral 14 denotes a wafer exchange chamber for temporarily storing the wafers under atmospheric pressure, and reference numeral 13 denotes a transfer hand for loading and unloading the wafer between the wafer exchange chamber 14 and the load lock chamber 15.

  There are roughly two types of methods for controlling the temperature of the wafer in the exposure apparatus. One is a type in which the temperature is adjusted before the wafer is held on the chuck of the wafer stage, and the other is a type in which the temperature is adjusted after the wafer is held on the chuck. The former mainly corresponds to the temperature fluctuation in the load lock and the temperature control accuracy after pre-baking, and the latter mainly corresponds to the exposure heat absorption of the wafer.

  Hereinafter, the non-contact temperature measurement of the first embodiment of the present invention will be described. In this embodiment, the temperature is controlled before the wafer is held on the wafer chuck.

  FIG. 1 is a schematic configuration diagram showing the vicinity of a wafer 1 as a measurement target for explaining non-contact temperature measurement according to the present embodiment. Since the temperature of the wafer 1 passing through the load lock chamber 15 is lower than the apparatus reference temperature, the wafer 1 is heated by a temperature control device 23 such as a hot plate or a lamp in order to compensate for the temperature drop. Reference numeral 20 denotes a radiation type temperature sensor for detecting infrared energy such as a thermopile, and reference numeral 21 denotes a viewing angle thereof. Reference numeral 22 denotes an infrared energy shielding unit for preventing infrared rays from the temperature control device 23 from passing through the wafer 1 and entering the radiation temperature sensor 20. And since the infrared energy shielding part 22 has an area more than the area | region equivalent to the viewing angle 21 of the radiation type temperature sensor 20, it becomes possible to shield the infrared stray light from the temperature control apparatus 20. FIG. Therefore, as the infrared energy shielding unit 22 for accurately measuring the temperature of the wafer 1, infrared rays in the wavelength range of 5 to 10 μm near the 296K that are radiated from the temperature control device 23 and are transmissive to the wafer 1. In which the heat radiation in the wavelength region from the infrared energy shielding part 22 is minimized. Specifically, it is desirable to use aluminum, gold, an aluminum-copper alloy, an aluminum-magnesium alloy, palladium, nickel, cobalt, iron, or the like as a material and both surfaces are mirror-finished. By performing mirror finish, it becomes possible to suppress the emissivity in the vicinity of 296K to a range of about 0.01 to 0.02. Hereinafter, description will be made using a model.

Consider a simple one-dimensional case comprising a radiation temperature sensor 20, a wafer 1 as a measurement target, and a background member 121 disposed on the back side of the wafer 1 as shown in FIG. Since the wafer 1 is transparent in the wavelength range of 5 to 10 μm, the energy Q [W / m ² ] incident on the radiation temperature sensor 20 is the radiation energy q ₁ from the wafer 1 and the radiation energy from the background member 121. a linear combination with q ₂ ,

Can be expressed as Here, a and b are proportional coefficients, where a is the transmittance until the light enters the radiation temperature sensor 20 from the wafer 1, and b is the light transmitted from the background member 121 through the wafer 1 to the radiation temperature sensor 20. It may be considered as the transmittance until the time.

q ₁ and q ₂ are radiant energy from each surface,

Can be expressed. Here, ε ₁ and ε ₂ are the emissivities of the wafer 1 and the background member 121, σ is a Stefan-Boltzmann constant (σ = 5.67E−8 W / m ² K ⁴ ), and T ₁ and T ₂ are the wafer 1 and the wafer 1, respectively. This is the surface temperature of the background member 121. Summarizing Formula (1) and Formula (2),

It becomes. Therefore, in order to eliminate the influence of the background member 121 from the energy Q incident on the radiation-type temperature sensor 20, a method is adopted in which the emissivity ε ₂ becomes as small as possible, and the temperature variation of the wafer temperature measurement value is T ₂ . The configuration may be insensitive. In order to realize this, a member having a mirror finish of aluminum, gold, aluminum-copper alloy, aluminum-magnesium alloy, palladium, nickel, cobalt, iron or the like is inserted between the wafer 1 and the background member 121. Alternatively, it is desirable to directly deposit these metals on the surface of the background member 121.

  In this embodiment, non-contact temperature measurement of the wafer 1 is performed in a type in which the temperature is adjusted before the wafer 1 is held on the chuck of the wafer stage 6. Specifically, as shown in FIG. 6, the temperature of the wafer 1 is measured before the wafer 1 is loaded into the load lock chamber 15, and the amount of temperature decrease in the load lock chamber 15 is predicted to preliminarily load the wafer 1. In the case of so-called preheating, the present embodiment is applicable. In FIG. 6, reference numeral 1 denotes a wafer, and the radiation type temperature sensor 20 and the infrared energy shielding unit 22 are arranged to face each other with the wafer 1 interposed therebetween. Reference numeral 23 denotes a temperature control device such as a heater, and reference numeral 31 denotes a temperature control unit, which controls the output of the temperature control device 23 so that the output of the radiation type temperature sensor 20 becomes the target temperature.

  Further, as shown in FIG. 7, temperature measurement can be performed in the load lock chamber 15. The temperature control device 23 for the wafer 1 is disposed in the load lock chamber 15, and the temperature of the wafer 1 is measured by the radiation temperature sensor 20 in a non-contact temperature during vacuum evacuation. The amount of heat is added to compensate for the temperature drop of the wafer 1. The temperature control unit 31 controls the output of the temperature adjustment device 23 so that the output of the radiation type temperature sensor 20 becomes the target temperature.

  Furthermore, as shown in FIG. 8, it is possible to measure the temperature in the exposure apparatus chamber 4. This method is so-called post-heating, in which the temperature is adjusted immediately before the wafer 1 whose temperature has been lowered in the load lock chamber 15 is carried into the exposure apparatus chamber 4 and held on the chuck of the wafer stage 6. The temperature control unit 31 controls the output of the temperature adjustment device 23 so that the output of the radiation type temperature sensor 20 becomes the target temperature.

  In any of the above cases, a block diagram in the case of controlling the temperature of the wafer 1 using the temperature control device 23 such as a heater or a lamp is as shown in FIG. The temperature control unit 31 feeds back the output T of the non-contact thermometer (radiation type temperature sensor) 20 of the wafer 1 to be controlled so that the deviation Te between this temperature and the target temperature Ts of the wafer 1 becomes zero. Further, the output of the temperature control device 23 is controlled by the PID controller 50.

  As described above, when the temperature of the wafer is measured in a non-contact manner, even when the heating / cooling means is arranged on the back side of the wafer measurement surface, the both surfaces are disposed between the wafer and the heating / cooling means. By placing the above-described metal-shielding member that has been mirror-polished on the surface of the wafer, or by arranging the shielding member that is not the above-mentioned metal but has the above-described metal film formed on both sides of the base material to provide a mirror-finished surface. The thermal effect of can be eliminated. Thereby, precise non-contact temperature measurement of the wafer becomes possible. Based on the temperature measurement result, the wafer temperature can be controlled with high accuracy.

  Hereinafter, the non-contact temperature measurement of the second embodiment of the present invention will be described. In this embodiment, the temperature is controlled before the wafer is held on the wafer chuck on the wafer stage.

  FIG. 2 is a schematic configuration diagram showing the vicinity of the wafer 1 as a measurement target for explaining the non-contact temperature measurement according to the present embodiment. Reference numeral 40 in the figure denotes an electrostatic chuck for attracting and holding the wafer, and the wafer 1 is held by a large number of pins 43. Since the contact area between the pins 43 and the wafer 1 is several percent or less of the entire area of the wafer 1 and these are in a vacuum environment, the wafer 1 and the wafer chuck 40 may be considered to be close to heat insulation. Therefore, the temperature of the wafer 1 is controlled by transferring radiant energy to and from the wafer chuck 40.

  Reference numeral 42 denotes a coolant for adjusting the temperature of the wafer chuck 40 in order to prevent a temperature rise due to absorption of exposure light of the wafer 1. There are various other methods for cooling the wafer chuck 40, for example, a method of arranging a Peltier element is also conceivable. Reference numeral 20 denotes a radiation type temperature sensor that detects infrared energy, such as a thermopile similar to the previous embodiment, and 21 denotes the viewing angle thereof.

  Reference numeral 41 denotes an infrared energy shield provided at a specific location on the surface of the wafer chuck 40. This is to prevent infrared energy from the wafer chuck 40 that is the background of the wafer 1 from being transmitted through the wafer 1 and entering the radiation temperature sensor 20. The area is equal to or larger than the area corresponding to the viewing angle of the radiation temperature sensor 20. An example of the arrangement of the infrared energy shield 41 on the wafer chuck 40 is shown in FIG. Reference numerals 70 a, 70 b, and 70 c are three pins when a transfer hand (not shown) delivers the wafer 1 to the wafer chuck 40. In this example, the infrared energy shielding part 41 on the wafer chuck 40 is provided at one place. However, when measuring the wafer surface temperature at a plurality of points, a plurality of places (for example, four places) may be provided as shown in FIG. The arrangement location and the number thereof are not limited to this, depending on the specifications of the exposure apparatus.

  In order to accurately measure the wafer temperature in this manner, infrared radiation in the 5 to 10 μm wavelength region near 296K that is radiated from the wafer chuck 40 and is transmissive to the wafer 1 as the infrared energy shield 41 is minimized. A metal may be disposed or deposited on the surface of the wafer chuck 40. Specifically, as in the first embodiment, aluminum, gold, an aluminum-copper alloy, an aluminum-magnesium alloy, palladium, nickel, cobalt, iron, etc., which are mirror-finished on the wafer 1 side are desirable. . By performing mirror finish, it becomes possible to suppress the emissivity in the vicinity of 296K to a range of about 0.01 to 0.02. Further, these metals can be deposited on the surface of the wafer chuck 40 to form a mirror surface.

  This embodiment relates to a non-contact temperature measurement type in which the temperature is adjusted after the wafer is carried into the exposure apparatus and held on the wafer chuck. Specifically, as shown in FIG. 10, the wafer 1 is held by the wafer chuck 40, and exposure is started after the alignment operation is completed. When exposure of all shots is completed, exposure of one wafer is completed. In this embodiment, the temperature of the wafer 1 until the wafer 1 is held by the wafer chuck 40 and the exposure is completed can be measured in a non-contact manner. A metal infrared shielding member is incorporated in the air chuck 40 that holds the wafer 1 by suction. Reference numeral 20 denotes a non-contact temperature sensor incorporated in the lens barrel portion of the projection optical system. The infrared shielding portion of the wafer chuck 40 is moved within the viewing angle of the non-contact temperature sensor 20 by the XY stage 61, whereby the wafer 1. It becomes possible to measure the temperature of the non-contact. Reference numeral 31 denotes a temperature control unit that controls the output of the cooling means so that the output of the temperature sensor 20 reaches the target temperature.

  FIG. 11 is a block diagram showing the control of the wafer temperature using the cooling means such as the refrigerant, the Peltier device, etc. in the present embodiment. The temperature controller 31 feeds back the output T of the non-contact thermometer (radiation type temperature sensor) 20 of the wafer 1 to be controlled so that the deviation Te between this temperature and the target temperature Ts of the wafer becomes zero. The output of the cooling means 63 is controlled by the PID controller 50.

  As described above, highly accurate non-contact temperature measurement and temperature control are possible even for a wafer that is attracted and held by the wafer chuck. In this embodiment, the temperature measurement and temperature control of the wafer can be performed with an extremely simple configuration by arranging the above-described metal shielding member on the wafer chuck surface or by depositing the above-described metal on the wafer chuck surface. Is possible.

  Next, with reference to FIGS. 14 and 15, an embodiment of a device manufacturing method using the semiconductor exposure apparatus will be described. FIG. 14 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, and the like). Here, the manufacture of a semiconductor chip will be described as an example. In step 101 (circuit design), a device circuit is designed. In step 102 (reticle fabrication), a reticle on which the designed circuit pattern is formed is fabricated. In step 103 (wafer manufacture), a wafer (substrate) is manufactured using a material such as silicon. Step 104 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the reticle and wafer. Step 105 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer created in step 104, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). . In step 106 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 105 are performed. Through these steps, the semiconductor device is completed and shipped (step 107).

  FIG. 15 is a detailed flowchart of the wafer process in Step 104. In step 111 (oxidation), the wafer surface is oxidized. In step 112 (CVD), an insulating film is formed on the surface of the wafer. In step 113 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like. In step 114 (ion implantation), ions are implanted into the wafer. In step 115 (resist process), a photosensitive agent is applied to the wafer. Step 116 (exposure) uses the exposure apparatus S to expose a reticle circuit pattern onto the wafer. In step 117 (development), the exposed wafer is developed. In step 118 (etching), portions other than the developed resist image are removed. In step 119 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer. According to the manufacturing method of the present embodiment, it is possible to manufacture a higher-quality device than before.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these, A various deformation | transformation and change are possible within the range of the summary.

  According to the above embodiment, the radiation temperature sensor for detecting the infrared radiation energy of the wafer is arranged on the temperature measurement surface (front surface) side of the wafer, and the emissivity is on the back surface side of the wafer and at the position facing the radiation temperature sensor. By disposing the infrared energy shielding part configured with an extremely small mirror surface, the wafer temperature can be measured in a non-contact manner with high accuracy without being affected by the background environment on the back side. If the measurement result is reflected in temperature control, high-precision temperature control becomes possible.

  If the area corresponding to the viewing angle of the infrared radiation temperature sensor (all detection areas) is covered with an infrared energy shield, the infrared stray light can be used even when heating and cooling means are present on the wafer background. Does not enter the sensor. Further, since the emissivity of the infrared energy shielding part is extremely low, the emission of infrared energy can be made extremely small.

It is a schematic block diagram which shows the wafer vicinity for demonstrating the non-contact temperature measurement which concerns on 1st Example of this invention. It is a schematic block diagram which shows the wafer vicinity for demonstrating the non-contact temperature measurement which concerns on the 2nd Example of this invention. It is a principal part block diagram which shows schematic structure of a semiconductor exposure apparatus. It is a graph which shows the relationship between the center wavelength of black body radiation of 296K vicinity, and radiant energy. It is a model figure for demonstrating the heat flow in the wafer vicinity. It is a schematic block diagram of the semiconductor exposure apparatus to which an example of the non-contact temperature measurement which concerns on 1st Example of this invention is applied. It is a schematic block diagram of the semiconductor exposure apparatus to which the other example of the non-contact temperature measurement which concerns on 1st Example of this invention is applied. It is a schematic block diagram of the semiconductor exposure apparatus to which the further another example of the non-contact temperature measurement which concerns on 1st Example of this invention is applied. It is a block diagram explaining non-contact temperature measurement concerning the 1st example of the present invention. It is a schematic block diagram of the semiconductor exposure apparatus which applies the non-contact temperature measurement which concerns on the 2nd Example of this invention. It is a block diagram explaining the non-contact temperature measurement which concerns on the 2nd Example of this invention. It is an arrangement drawing showing an example of arrangement of an infrared energy shielding part on a wafer chuck in the 2nd example of the present invention. It is an arrangement | positioning figure which shows the other example of arrangement | positioning of the infrared energy shielding part on the wafer chuck | zipper in the 2nd Example of this invention. It is a flowchart for demonstrating the device manufacturing method by a semiconductor exposure apparatus. It is a detailed flowchart of step 104 shown in FIG.

Explanation of symbols

20: Radiation type temperature sensor 22, 41: Infrared energy shielding part

Claims (10)

A detector for detecting radiant energy emitted from the surface of the substrate;
A temperature measuring device, comprising: a radiation energy shielding unit that is disposed on a back surface side of the substrate and reduces radiation energy that reaches the detector from a member other than the substrate. A temperature control device for controlling the temperature of the substrate;
The temperature measurement device according to claim 3, wherein the radiant energy shielding unit is disposed so as to reduce an amount of the radiant energy radiated from the temperature control device to reach the detector.   The temperature measuring device according to claim 1, wherein the detector is a non-contact radiation temperature sensor.   The temperature measuring apparatus according to claim 1, further comprising a temperature control unit that controls a temperature of the substrate based on a detection result from the detector.   The temperature measuring device according to claim 3, wherein the surface of the infrared energy shielding portion is a mirror surface.   The temperature measuring apparatus according to claim 1, wherein the infrared energy shielding unit is disposed so as to cover the entire detection region of the detector.   2. The infrared energy shielding portion is formed of at least one metal selected from aluminum, gold, aluminum-copper alloy, aluminum-magnesium alloy, palladium, nickel, cobalt, and iron. The temperature measuring device described.   The infrared energy shielding part is formed by depositing at least one of aluminum, gold, aluminum-copper alloy, aluminum-magnesium alloy, palladium, nickel, cobalt, and iron on the base material. The temperature measuring device according to claim 1, wherein: An illumination optical system that guides the exposure light from the exposure light source to the reticle;
A reticle driving system for driving the reticle;
A projection optical system that projects a pattern on the reticle onto the substrate;
A substrate driving system for driving the substrate;
An exposure apparatus comprising the temperature measurement device according to claim 1. Projecting and exposing a pattern on the substrate by the exposure apparatus according to claim 9;
And a step of performing a predetermined process on the projection-exposed substrate.