JP2002203770A - Heating and cooling method of resist - Google Patents

Abstract

PROBLEM TO BE SOLVED: To heat and cool resist with high precision. SOLUTION: In order to form a resist pattern on a substrate 11 whose thermal conductivity is inferior, the temperature of a temperature adjusting plate 13 is changed stepwise or continuously when resist 12 is heated and cooled. Consequently, temperature control and time control of baking of the resist 12 are enabled with high precision, line width controllability of the resist pattern is improved, and especially, coping with a fine pattern is enabled.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to light, ultraviolet, X
The present invention relates to a method of heating and cooling a resist used when forming a resist pattern using a line, an EB, an ion beam, or the like.

Further, a reticle, an X-ray reflection type mask, or an EB manufactured by using the resist heating / cooling method.
The present invention relates to a device manufactured using a mask for use, an optical element, a liquid crystal substrate, an exposure apparatus using the same, and a device manufacturing method.

[0003]

2. Description of the Related Art Hitherto, a refraction type optical element such as a lens or a prism is often used in an optical system constituting an optical apparatus, and a diffractive optical element as shown in FIG. It is used as an optical element for converting to a wavefront. This diffractive optical element has features that are not found in a refractive optical element.For example, the diffractive optical element has a dispersion value opposite to that of the refractive optical element. It has features such as miniaturization.

A conventional diffractive optical element is manufactured by mechanical grinding or a mold using a mold manufactured by mechanical grinding. However, in order to give a diffractive optical element a large power as an optical element, it is desirable to manufacture the diffractive optical element at a pitch as fine as possible, and a method of applying a semiconductor manufacturing process has begun to be studied.

In general, by making the shape of the diffractive optical element into a stepped binary shape as shown in FIG. 12, a semiconductor manufacturing technique can be applied, and a highly accurate diffractive optical element can be manufactured. For this reason, research on a binary diffractive optical element in which a blazed shape is approximated to a stepped shape has been actively pursued recently.

It is desirable that the processing line width be as small as possible not only to give the diffractive optical element a large power as an optical element but also to increase the degree of approximation. Therefore, in order to obtain a high-performance diffractive optical element, a lithography technique cultivated in semiconductor manufacturing capable of high-precision submicron processing is used.

[0007] However, the lithography technique described above uses Si
Development is underway on the assumption that a substrate is used.

In order to form a fine pattern using a lithography technique, a resist made of an organic material which is sensitive to light, ultraviolet rays, X-rays, EB, ion beams, etc. is used, and the resist is exposed to light in an exposure apparatus to thereby obtain a desired resist. A pattern is formed, and the resist pattern is used as a mask for etching using a chemical, or for processing using a dry etching apparatus using plasma or the like. However, the substrate used for the above-described mask or element has a lower thermal conductivity by one to two orders of magnitude as compared with Si.

These processing methods have also been applied to manufacturing using a reticle, particularly a phase shift reticle, an X-ray reflection mask, an EB mask, an optical element, a substrate other than a Si wafer such as a liquid crystal substrate.

However, the substrate used for the above-mentioned mask or element has a lower thermal conductivity by one to two orders of magnitude as compared with Si.

[0011]

A resist pattern for determining a fine line width by a lithography technique is manufactured by sequentially performing resist application, pre-bake, exposure, post-exposure bake, development, and post-bake. Can be. However, since an apparatus has been developed on the assumption that a Si wafer is used in each step, various problems occur particularly during baking.

In the manufacturing process, pre-baking is always performed, but post-exposure baking or post-baking is selected depending on the type of resist or the process performed after forming a resist pattern. In a normal semiconductor manufacturing process, as shown in FIG. 13, in order to heat the resist 2 applied to the substrate 1, the substrate 1 is placed on a pinch using a hot plate 3 and heated from the back side of the substrate 1. . However, when quartz is used for the substrate 1, the thermal conductivity is lower than that of the Si wafer, and the plate thickness of the substrate 1 is larger than that of the Si wafer. The time required for the temperature of the substrate 1 to reach the same temperature as that of the plate 3 increases when the thermal conductivity of the material of the substrate 1 is low and when the heat capacity per unit area (specific heat, density, thickness) increases. . Therefore, the temperature controllability of the substrate 1 becomes extremely difficult.

That is, considering the reticle used for light exposure, the thermal conductivity of the quartz substrate 1 is two orders of magnitude lower than that of Si, the plate thickness is 6.35 to 9 mm, and the plate thickness is 1 mm or less.
It takes several tens of times longer than the i-wafer. Compared to the resist on the Si wafer, it is impossible for the substrate 1 to reach the temperature of the plate 3 with the usual baking time of 60 seconds. Also, similar time is required for cooling.

A substrate having poor heat conductivity is defined as having a thickness of 0.1 mm.
It is defined as requiring more than 10 times as much time for temperature rise as 725 mm Si wafer. That is, density ρ, specific heat c,
Assuming that the thermal conductivity is λ and the thickness is t, the substrate satisfies the following equation (1).

(Ρc / λ) t ² ≧ 5.23 × 10 ⁻² (1) Conventionally, patterning on a substrate having poor thermal conductivity is performed in a process having a large line width as compared with a mass production process of Si wafers. Only can be applied. Therefore, a method such as heating with an oven or infrared rays is used. But,
For a reticle, particularly a phase shift reticle, an X-ray reflection mask, an EB mask, an optical element, a liquid crystal, and the like, the same or higher processing accuracy as that of a Si wafer is required. In particular, when using a chemically amplified resist that has recently been developed, the range of acid diffusion is controlled by baking, so the line width of the resist and baking are closely related, and the unit is 0.1 ° C. Temperature management and time management become extremely important.

An object of the present invention is to solve the above-mentioned problems,
It is an object of the present invention to provide a resist heating / cooling method capable of improving the line width controllability of a resist pattern.

[0017]

According to the present invention, there is provided a resist heating / cooling method for forming a pattern on a substrate having poor heat conductivity. The temperature of the temperature control plate is changed stepwise or continuously.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the embodiments shown in FIGS. FIG. 1 is a sectional view showing the fabrication of the diffractive optical element according to the first embodiment.
(A) shows a substrate 11 made of quartz having a diameter a = 200 mm and a thickness t = 20 mm. In addition, the above equation (1)
Is calculated as (ρc / λ) t ² , the thickness t = 20
mm quartz substrate, (ρc / λ) t ² = 52
This is a very large value of 5.3.

In this embodiment, in order to reduce the amount of deformation caused by non-uniformity of the contact portion due to its own weight deformation and the processing accuracy of the lens barrel, distortion at the time of mounting due to stress applied at the time of fixing, and pressure and temperature fluctuations. Although a quartz substrate having a thickness of 20 mm is used, a quartz substrate having a thickness substantially the same as that of the Si wafer may be used. However, even in that case, (ρc / λ) t ² =
0.69.

First, in order to mold a fine pattern, FIG.
(B) As shown in FIG.
A resist 12 of a chemically amplified resist UV6 for rF (manufactured by Shipley) is applied on the substrate 11. The resist 12 depends on the line width to be processed, but in order to perform sub-micron processing, about 5 μm is required for a thickness of about 1 μm.
It is necessary to control m. Before the application of the resist 12, reflection from the substrate 11 can be prevented,
In order to avoid the chemical action from 1
In some cases, heating is performed after R3 (manufactured by Shipley) is applied. In that case, this baking step and the like are further required at 185 ° C.

Next, as shown in FIG. 1C, a pre-bake step is performed by using the temperature control plates 13 on both the resist side and the non-resist side.

This step will be described in more detail. Heating and cooling of the resist 12 are performed by a baking apparatus shown in FIG. In order to heat the resist on the quartz substrate 11 having a thickness of 20 mm to 135 ± 0.1 ° C., the temperature control plate 13a on the side of the resist 12 is set at 135 ° C.
And the temperature control plate 13b on the non-resist side is 180
° C, the temperature adjusting plate 13c is kept at 150 ° C, the temperature adjusting plate 13d is kept at 140 ° C, and the temperature adjusting plate 13e is kept at 135 ° C.
The space between the temperature control plate 13b and the substrate 11 is held by the spacer 14, and is set to 0.1 mm this time. For 30 seconds, 15 seconds, 5 seconds, and 30 seconds on the non-resist side temperature adjustment plates 13b, 13c, 13d, and 13e, respectively, the substrate 1
1 and the temperature adjusting plate 13a on the side of the resist 12 are integrally moved. During cooling, the temperature adjustment plate 1 on the resist side is used.
3a is integrally moved.

The above set temperature and its temperature adjusting plate 13b
The optimal time for holding on the substrate 13e is selected depending on the material and thickness of the substrate 11 on which the resist 12 is applied, and the heating or cooling temperature. Of course, it is necessary to change this value depending on the distance between the temperature control plate 13 and the substrate 11. These may be roughly determined by calculation, and may be actually adjusted by the temperature setting of the substrate 11 or the condition of the resist pattern. Further, it is also possible to adjust the temperature of the temperature adjusting plate 13 while measuring the temperature of the actual substrate using a temperature sensor using infrared rays.

In this case, the temperature is changed stepwise by moving the substrate 11 on the plurality of temperature adjusting plates 13 set to a plurality of temperatures.
There is no problem even if the temperature of 3 is changed continuously or intermittently.

These can also change the temperature of both the resist 12 side and the non-resist side of the temperature control plate 13. Further, the temperature adjustment plate 13 may be disposed on either the resist 12 side or the non-resist side.

When the substrate 11 is made of a material having a low thermal conductivity, the in-plane temperature distribution may become a problem. At this time, the temperature adjusting plate 13 can be divided into a plurality of pieces as shown in FIG. 3A, and the temperature can be set more finely individually as shown in FIG. 3B.

The heating and cooling may be performed in air, but may be performed in an atmosphere having a high thermal conductivity such as He. Heating / cooling of the resist 12 from the temperature adjusting plate 13a on the resist 12 side is performed by heat conduction by gas in the space, thermal convection by gas convection, and radiation from the temperature adjusting plate 13a. When the distance between the plates 13a is about 0.5 mm, the resist 12 and the temperature control plate 13
The heat conduction by the gas existing in the space between “a” and “a” becomes dominant. The thermal conductivity of the 0.5 mm air layer is almost the same as the thermal conductivity of a 1 mm thick Si wafer.

If it is desired to make the distance between the resist 12 and the temperature control plate 13a narrower, or if there is no space for interposing the spacer 14, as shown in FIG. 1D, the detection mark 15 is formed on the temperature control plate 13a. The distance between the resist 12 and the temperature control plate 13a can be measured by detecting the detection mark 15 using a laser length measuring device 16 or the like. This interval may be measured using a micrometer 17 as shown in FIG. In this way, by measuring the distance between the resist 12 and the temperature control plate 13a, it is possible to control the distance to about 10 μm. Further, the detection mark 15 may not be provided depending on the measurement method.

By any method, the heated and cooled resist 12 is exposed using an exposure device using KrF laser light or the like. For exposure, light other than KrF laser light,
Resist 1 using ultraviolet, X-ray, EB and ion beam
2 may use the one corresponding to each energy.

Subsequently, a post-exposure bake, a development step, and a post-bake, which are heating steps, are again performed to obtain a line width of 0.1 to 0.1 mm depending on the exposure method as shown in FIG. A fine resist pattern 18 having a desired surface shape of about 5 μm can be formed. These post-exposure bake and post-bake may use the temperature control plate 13 used in FIGS. 1C to 1E and 2 as in the pre-bake. In particular, pre-bake and post-exposure bake require high-precision temperature controllability.

Next, as shown in FIG. 1 (g), the substrate 11 is etched using a chemical using the resist pattern 18 as a mask, or processed using a dry etching apparatus using plasma or the like. However, for sub-micron line widths, high-precision dry etching is mainly used.

In this embodiment, quartz is used for the substrate 11, but instead of quartz, alumina silicate glass, borosilicate glass, oxides such as alumina, calcium fluoride, lithium fluoride, barium fluoride, etc. A light-transmitting material such as a fluoride such as magnesium fluoride or strontium fluoride or an optical plastic may be used.

By repeating the steps shown in FIGS. 1B to 1G, a step-like shape as shown in FIG. 1H, for example, an eight-stage diffractive optical element 19 can be formed. By manufacturing such a high-precision fine diffraction optical element, the optical performance at the time of design can be sufficiently exhibited.

FIG. 4 is a sectional view showing the fabrication of a reticle used in an ArF laser exposure apparatus in the second embodiment. As shown in FIG. A chromium film 22 is formed as a light-shielding film on a 35 mm, 6 inch square quartz transmission substrate 21.
When the formula (1) is calculated on the substrate 21 having a plate thickness of 6.35 mm, a very large value of (ρc / λ) t ² = 53.0 is obtained.

Further, chromium oxide or the like may be laminated on the chromium film 22 to prevent reflection. In order to form the chromium film 22 in a desired pattern, for example, a chemically amplified resist for EB SAL601 (Shipple) is formed on the chromium film 22.
A resist 12 made of y company) is applied. Usually,
In a reduction exposure apparatus using light, the reticle pattern is 4 to
Since the size is enlarged five times, the number of fine patterns that require the chemically amplified resist 12 is small, but it is necessary to use it when a fine shape such as a square pattern OPC is required. .

In order to improve the controllability of the baking temperature of the resist 12, the substrate 21 is placed on the temperature control plate 13 whose temperature is continuously adjusted from 150 ° C. to 105 ° C., and the resist 12 is heated. Further, for cooling, a temperature adjusting plate 13 whose temperature is continuously adjusted from 0 ° C. to 23 ° C. is used.

Subsequently, as shown in FIG. 4B, after the resist 12 is drawn by an EB drawing apparatus, post-exposure bake, development, post-bake and the like are sequentially performed and patterned, and the resist pattern is used as a mask. The desired pattern 2 is formed by etching the chromium film 32 by dry etching or wet etching.
Form 3 Although not shown in this embodiment, it may be used for forming a shifter for a phase shift reticle.

Therefore, in this embodiment, the resist 12
By performing the temperature control with high precision when heating the reticle, the light exposure reticle 24 having excellent line width controllability can be formed.

FIG. 5 is a sectional view showing the fabrication of an X-ray reflection type mask structure according to the third embodiment. As shown in FIG. 5 (a), NZTE (n) having a thickness of 6.35 mm and 6 inches square is used.
ear zero thermal expansio
n) A reflective substrate 32 having a multilayer structure of Mo / Si is laminated on a substrate 31, and a W film 33 is further formed on the reflective substrate 32.
Are laminated. However, when the formula (1) is calculated on the substrate 31 having a thickness of 10 mm, (ρc / λ) t ² = 5
This is a very large value of 1.3. In addition, W film 3
3 is formed in a desired pattern on the W film 33, for example, a chemically amplified resist for EB SAL601 (Shi).
(made by Pley Co.) is applied.

In the reduced X-ray exposure using the X-ray reflection type mask structure, the line width to be exposed is very fine, 0.1 μm or less. Required.

Then, in order to improve the temperature controllability when heating the resist 12, 130 ° C., 123 ° C., 12 ° C.
The temperature adjustment plate 13 adjusted to 0 ° C.
It is moved for 30 seconds, 10 seconds, and 20 seconds at intervals of 2 mm. To control this interval, as described in the first embodiment,
A detection mark 15 and a laser length measuring device 16 may be used. Further cooling is performed by moving the temperature control plate 13 adjusted to 13 ° C., 20 ° C., and 23 ° C. to the resist 12 at intervals of 0.2 mm.

Subsequently, as shown in FIG. 5B, the resist 12 is patterned by post exposure baking, a phenomenon, post baking, etc., sequentially after drawing in an EB drawing apparatus, and the W film is formed using the resist pattern as a mask. 33 is etched by dry etching or wet etching to form a desired non-reflective pattern 34.

Therefore, in this embodiment, since the temperature can be controlled with high accuracy, it is necessary to form the X-ray reflection type mask structure 35 having excellent line width controllability as shown in FIG. 5B. Can be.

When a liquid crystal substrate is manufactured, glass having a thickness of about 1 mm, for example, made of W7095 (manufactured by Corning Incorporated) is usually used for the liquid crystal substrate, so that the thermal conductivity is lower than that of quartz. However, since a very fine pattern is not required for liquid crystal, a baking method using an oven or the like can be used. However, recently, with the development of low-temperature polysilicon and the like, miniaturization, such as simultaneous creation of an IC for a driving unit, has also been advanced. The temperature is changed stepwise or continuously.

By performing high-precision temperature control when heating the resist 12 used for patterning, a liquid crystal substrate excellent in line width controllability can be formed.

FIG. 6 is a schematic view showing a semiconductor exposure apparatus, and includes a light source 4 such as a KrF, ArF, or F ₂ excimer laser.
The light beam L emitted from 1 is reflected by the mirror 42 and guided to the illumination optical system 43, and then illuminates the surface of the reticle 44 as the first object. Further, the light beam L obtained with the information of the reticle 44 transmits through the reduction projection optical system 45 and the wafer 4 placed on the wafer stage 46 for adjusting the focal position.
7 is projected.

FIG. 7 is an enlarged sectional view of the illumination optical system 43 or the projection optical system 45 in the semiconductor exposure apparatus. These optical elements 43 and 45 are manufactured in the refractive optical element 51 and the first embodiment. It is constituted by a combination of optical elements including the diffractive optical element 19. Although only one diffractive optical element 19 is used in this embodiment, a plurality of diffractive optical elements 19 may be used.

Since the diffractive optical element 19 has good line width controllability and the optical element is manufactured with high precision, it is possible to obtain a diffraction efficiency close to the theoretical value. Further, a sufficient rigidity can be obtained as compared with a conventional optical element. By using such a diffractive optical element 19 for the illumination optical system 53 or the projection optical system 45, non-uniformity of the contact portion due to its own weight deformation or processing accuracy of the lens barrel, distortion due to stress applied at the time of fixing, etc.
Deformation due to atmospheric pressure and temperature fluctuations can be minimized or eliminated, surface deformation does not occur, aberration can be reduced, performance at the time of design can be fully exhibited, and image performance can be improved. it can.

Further, as compared with a conventional optical system using only a refracting element, the number of lenses can be reduced.
As a result, light absorption by the glass material is reduced, and it becomes possible to minimize deformation of the lens and a change in the refractive index due to the heat absorbed. Further, since the chromatic aberration can be easily corrected, the wavelength band of the laser can be expanded, and the power of the laser can be used effectively. Furthermore, even when the environment in which the semiconductor exposure apparatus is installed changes, the occurrence of a shift in the focal position can be minimized, and as a result, highly accurate pattern transfer can be performed satisfactorily.

FIG. 8 is a schematic view of a main part of a semiconductor exposure apparatus (X-ray reduction exposure apparatus) using the X-ray reflection type mask structure 35 prepared in the third embodiment. The entire optical system is housed in a vacuum vessel 61 which is an exposure chamber for keeping a vacuum.

The undulator light source 62 emits a thin and parallel so-called pencil beam X-ray beam X. This X-ray beam X is reflected by a total reflection mirror 63 to cut short wavelength components, and is converted into a substantially monochromatic X-ray beam X as a reflective mask structure 35 mounted on a mask stage 64.
Is irradiated. A desired pattern 34 is formed on the reflective mask structure 35 by using the method of the third embodiment. The X-ray beam X is reflected according to the pattern 34 and guided to the projection optical system 65. Further, the X-ray beam X is projected onto the projection optical system 66.
Through the wafer 68 mounted on the wafer stage 67
And the pattern 34 of the reflective mask structure 35 is reduced and projected on the wafer 68 and printed on a photosensitive agent (resist).

By performing exposure using the above-described X-ray reduction exposure apparatus, high-precision X-ray reduction exposure corresponding to mass production could be performed.

Next, a semiconductor exposure apparatus equipped with the diffractive optical element manufactured in the first embodiment or an X-ray reduction exposure apparatus using the X-ray reflection type mask structure 35 manufactured in the third embodiment is used. A method for manufacturing a semiconductor device using the method will be described.

FIG. 9 is a flow chart of a process for manufacturing a semiconductor chip such as an IC or LSI, a semiconductor device such as a liquid crystal panel or a CCD. First, in step S1, a circuit of a semiconductor device is designed, and then in step S2, a mask is manufactured using the circuit pattern designed in step S1 using an EB lithography apparatus or the like. On the other hand, in step S3, a wafer is manufactured using a material such as silicon. Thereafter, in step S4 called a pre-process, using the mask and wafer prepared in steps S2 and S3, the mask is loaded into an exposure apparatus, and the mask is transported and chucked on a mask chuck.

Next, the wafer is loaded to detect misalignment, the wafer stage is driven to perform alignment, and exposure is performed when the alignment is matched.
After the exposure is completed, the wafer is stepped to the next shot, and a circuit is formed on the wafer by lithography. Further, in step S5 called a post-process, a semiconductor chip is formed using the wafer manufactured in step S4 through an assembly process such as dicing and bonding and a packaging process such as chip encapsulation. In step S6, the chiped semiconductor device undergoes inspections such as an operation check test and a durability test. The semiconductor device is completed through such a series of steps, and the step S
Go to 7 and ship.

FIG. 20 is a flowchart of the detailed manufacturing process of the wafer manufacturing in step S3 in FIG. First, in step S11, the wafer surface is oxidized. Subsequently, in step S12, an insulating film is formed on the wafer surface by the CVD method.
Is formed by an evaporation method. Step S
Proceed to 14 to implant ions into the wafer, and then to step S
At 15, a photosensitive agent is applied on the wafer. Step S
In 16, the circuit pattern of the mask is printed on a photosensitive agent (resist) on the wafer by the semiconductor exposure apparatus.

In step S17, step S16
Developing the photosensitive agent on the exposed wafer. Furthermore,
In step S18, portions other than the resist image developed in step S17 are etched. Thereafter, in step S19, the unnecessary resist after etching is removed. Further, by repeating these series of steps, multiple circuit patterns can be formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to cope with mass production of a highly integrated semiconductor device, which has been conventionally difficult to manufacture.

[0059]

As described above, in the method for heating and cooling a resist according to the present invention, a resist pattern is formed on a substrate having poor thermal conductivity. By changing the temperature stepwise or continuously, it is possible to control the temperature control and the time control of the resist baking with high accuracy, and to improve the line width controllability of the resist pattern, and particularly to cope with a fine pattern.

Further, according to the resist heating / cooling method according to the present embodiment, a semiconductor exposure apparatus equipped with a diffractive optical element manufactured precisely at a fine pitch or an exposure using a reticle or a mask according to the present embodiment. It is possible to obtain a highly accurate device manufacturing method and a device using the apparatus.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a production of a diffractive optical element according to a first embodiment.

FIG. 2 is a schematic view of a baking apparatus.

FIG. 3 is a schematic view of a temperature adjusting plate.

FIG. 4 is a cross-sectional view showing a reticle-related process in a second embodiment.

FIG. 5 is a cross-sectional view of the manufacture of an X-ray reflection type mask structure according to a third embodiment.

FIG. 6 is a schematic view of a semiconductor exposure apparatus.

FIG. 7 is an enlarged sectional view of an optical system.

FIG. 8 is a schematic view of an X-ray reduction exposure apparatus.

FIG. 9 is a manufacturing flowchart of a semiconductor device.

FIG. 10 is a detailed flowchart of a wafer process.

FIG. 11 is a perspective view of a diffractive optical element.

FIG. 12 is a sectional view of a diffractive optical element.

FIG. 13 is a schematic view of a conventional baking apparatus.

[Explanation of symbols]

 11, 21, 31 Substrate 12 Resist 13 Temperature control plate 14 Spacer 15 Detection mark 16 Laser length measuring machine 17 Micrometer 18 Resist pattern 19 Diffractive optical element 22 Chromium film 23 Reticle 32 Reflective substrate 34 Non-reflective pattern 35 X-ray reflection type Mask structure

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G03F 7/20 501 G03F 7/30 501 7/30 501 H01L 21/30 566 502P 515D

Claims (16)

[Claims] 1. A resist characterized in that the temperature of a temperature adjusting plate is changed stepwise or continuously when heating or cooling the substrate in order to form a pattern on the substrate having poor thermal conductivity. Heating and cooling methods. 2. The resist heating / cooling method according to claim 1, wherein the temperature adjusting plate is provided on the resist side, the non-resist side, or both sides of the substrate coated with the resist. 3. The resist heating / cooling method according to claim 2, wherein one of the temperature adjusting plates provided on both sides has a fixed temperature. 4. The resist heating / cooling method according to claim 1, wherein the temperature adjusting plate and the substrate are in direct contact with each other. 5. The method of heating and cooling a resist according to claim 1, wherein a certain interval is provided between the temperature adjusting plate and the substrate. 6. The method according to claim 5, wherein the interval is 10 μm to 1 mm. 7. The resist heating / cooling method according to claim 1, wherein the temperature adjusting plate is adjusted in accordance with a temperature reached by the substrate. 8. The resist according to claim 7, wherein the temperature adjusting plate is divided so that the temperature can be adjusted.
Cooling method. 9. A reticle, an X-ray reflection mask or an EB mask manufactured by using the resist heating / cooling method according to claim 1. 10. An optical element manufactured by using the resist heating / cooling method according to claim 1. 11. A liquid crystal substrate manufactured by using the resist heating / cooling method according to claim 1. 12. At least a part of the substrate coated with the resist is made of alumina silicate glass, borosilicate glass,
The resist heating / cooling method according to claim 1, comprising an oxide such as quartz or alumina, calcium fluoride, lithium fluoride, barium fluoride, a fluoride such as magnesium fluoride or strontium fluoride, or an optical plastic. 13. An exposure apparatus for performing exposure using the reticle or the mask according to claim 9. 14. An optical exposure apparatus for performing optical exposure using the optical element according to claim 10. 15. A device produced by using the exposure apparatus according to claim 13 or 14 to transfer a desired pattern onto an object to be transferred by exposure and process and form the pattern. 16. A device manufacturing method for transferring a desired pattern onto an object by exposure using the exposure apparatus according to claim 13 and processing and forming the pattern to manufacture a device.