JP2010266687A - Exposure method, exposure apparatus and device producing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure method which suppresses the occurrence of exposure failures. <P>SOLUTION: The exposure method for sequentially exposing a plurality of substrates includes acquiring first temperature information regarding the temperature of a first substrate among the plurality of substrates, prior to exposure; exposing the first substrate by having the first substrate irradiated with a light; acquiring second temperature information regarding the temperature of the first substrate, after exposure; exposing a second substrate among the plurality of substrates, after adjusting the exposure condition of the second substrate, based on the first temperature information and the second temperature information. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an exposure method, an exposure apparatus, and a device manufacturing method.

  In the manufacturing process of an electronic device such as a flat panel display, for example, an exposure apparatus that exposes a substrate with exposure light as disclosed in the following patent document is used. The exposure apparatus has a substrate stage for holding a substrate, conveys the substrate to the substrate stage, and sequentially exposes a plurality of substrates.

JP 2001-093808 A

  In the exposure apparatus, the substrate may be thermally deformed. If a pattern image is projected onto the substrate by a projection optical system in a state where the substrate held on the substrate stage is thermally deformed, for example, it may be difficult to form the pattern on the substrate in an initial state. As a result, there is a possibility that an exposure failure such as a defect occurs in a pattern formed on the substrate or a defective device may occur.

  An object of an aspect of the present invention is to provide an exposure method and an exposure apparatus that can suppress the occurrence of exposure failure. Another object of the present invention is to provide a device manufacturing method that can suppress the occurrence of defective devices.

  According to a first aspect of the present invention, there is provided an exposure method for sequentially exposing a plurality of substrates, obtaining first temperature information relating to a temperature before exposure of the first substrate of the plurality of substrates, Based on the first temperature information and the second temperature information, irradiating the first substrate with exposure light to expose the first substrate, obtaining second temperature information related to the temperature of the first substrate after exposure, and And exposing the second substrate by adjusting an exposure condition for the second substrate among the plurality of substrates.

  According to a second aspect of the present invention, there is provided a device manufacturing method comprising exposing a substrate using the exposure method of the first aspect and developing the exposed substrate.

  According to the third aspect of the present invention, there is provided an exposure apparatus that sequentially exposes a plurality of substrates, an acquisition device capable of acquiring temperature information relating to the temperature of the substrate, and a plurality of substrates acquired by the acquisition device. An adjusting device for adjusting an exposure condition for the second substrate among the plurality of substrates based on the first temperature information on the temperature before exposure of the first substrate and the second temperature information on the temperature after exposure of the first substrate; An exposure apparatus is provided.

  According to a fourth aspect of the present invention, there is provided a device manufacturing method including exposing a substrate using the exposure apparatus according to the second aspect and developing the exposed substrate.

  According to the aspect of the present invention, it is possible to suppress the occurrence of exposure failure. Moreover, according to the aspect of the present invention, the occurrence of defective devices can be suppressed.

It is a schematic block diagram which shows an example of the exposure apparatus which concerns on 1st Embodiment. 1 is a plan view schematically showing a part of an exposure apparatus according to a first embodiment. It is a perspective view which shows an example of the exposure apparatus which concerns on 1st Embodiment. It is a figure which shows an example of the projection system and substrate stage which concern on 1st Embodiment. It is a schematic diagram which shows an example of the projection area | region which concerns on 1st Embodiment. It is a flowchart which shows an example of the exposure method which concerns on 1st Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 1st Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 1st Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 1st Embodiment. It is a figure which shows typically an example of the information memorize | stored in the memory | storage device which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the projection area | region which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the projection area | region which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the projection area | region which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the projection area | region which concerns on 1st Embodiment. It is a flowchart which shows an example of the exposure method which concerns on 2nd Embodiment. It is a flowchart for demonstrating an example of the manufacturing process of a microdevice.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each part will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction. In addition, the rotation (inclination) directions around the X axis, the Y axis, and the Z axis are the θX, θY, and θZ directions, respectively.

<First Embodiment>
A first embodiment will be described. FIG. 1 is a schematic block diagram showing an example of an exposure apparatus EX according to the first embodiment, and FIG. 2 is a plan view schematically showing a part of FIG.

  1 and 2, the exposure apparatus EX includes a mask stage 1 that can move while holding a mask M, a substrate stage 2 that can move while holding a substrate P, and illumination that illuminates the mask M with exposure light EL. A system IS, a projection system PS that projects an image of a pattern of a mask M illuminated by exposure light EL onto a substrate P, an interferometer system 3 that can measure the positions of the mask stage 1 and the substrate stage 2, and a substrate P A transport system 4 for transporting, a temperature adjusting device 5 capable of adjusting the temperature of the substrate P, a detection system 7 capable of detecting at least one of the temperature of the substrate P and the temperature of the substrate stage 2, and at least the projection system PS and the substrate stage 2, a control device 9 that controls the operation of the entire exposure apparatus EX, and a memory that is connected to the control device 9 and stores various information relating to exposure. And a device 10.

  The mask M includes a reticle on which a device pattern projected onto the substrate P is formed. The substrate P includes, for example, a base material such as a glass plate and a photosensitive film (coated photosensitizer) formed on the base material. In the present embodiment, the substrate P includes a large glass plate called mother glass, and the size of one side of the substrate P is, for example, 500 mm or more. In the present embodiment, a rectangular glass plate having a side of about 3000 mm is used as the base material of the substrate P.

  The chamber device 8 includes a chamber member 8A that forms a substantially closed internal space 8H, and an air conditioner 8B that controls the environment (temperature, humidity, cleanliness, pressure, etc.) of the internal space 8H. The substrate stage 2 moves in the internal space 8H.

  In the present embodiment, at least a part of the illumination system IS, the mask stage 1, the projection system PS, the substrate stage 2, the transfer system 4, the temperature adjustment device 5, and the detection system 7 are arranged in the internal space 8H. For example, the temperature adjustment device 5 may be disposed outside the internal space 8H formed by the chamber device 8. For example, when a second chamber device connected to the chamber device 8 is provided, the temperature adjustment device may be arranged in an internal space formed by the second chamber device.

  The illumination system IS irradiates the predetermined illumination area IR with the exposure light EL. The illumination area IR is an irradiation area of the exposure light EL emitted from the illumination system IS. The illumination system IS illuminates at least a part of the mask M arranged in the illumination area IR with the exposure light EL having a uniform illuminance distribution.

  The mask stage 1 has a holding portion 11 that holds at least a part of the lower surface of the mask M, and can move on the guide surface 12G of the first surface plate 12 while holding the mask M. The mask stage 1 holds the mask M so that the lower surface (pattern formation surface) of the mask M and the XY plane are substantially parallel. The mask stage 1 is movable while holding the mask M in the illumination area IR by the operation of a first drive system (not shown) including, for example, a linear motor. In the present embodiment, the mask stage is movable in three directions, the X axis, the Y axis, and the θZ direction.

  The projection system PS irradiates a predetermined projection region PR with the exposure light EL. The projection area PR is an irradiation area of the exposure light EL emitted from the projection system PS. The projection system PS projects an image of the pattern of the mask M at a predetermined projection magnification onto at least a part of the substrate P arranged in the projection region PR. The projection system PS projects an image of the pattern of the mask M onto at least a part of the substrate P arranged in the projection region PR.

  The substrate stage 2 has a holding portion 13 that holds at least a part of the back surface of the substrate P, and can move on the guide surface 14G of the second surface plate 14 while holding the substrate P. The substrate stage 2 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel. The substrate stage 2 is movable while holding the substrate P in the projection region PR by the operation of a second drive system (not shown) including, for example, a linear motor. In the present embodiment, the substrate stage 2 is movable in six directions including an X axis, a Y axis, a Z axis, a θX, a θY, and a θZ direction.

  The interferometer system 3 optically measures the position of the first interferometer unit 3A capable of optically measuring the position of the mask stage 1 (mask M) in the XY plane and the position of the substrate stage 2 (substrate P) in the XY plane. And a second interferometer unit 3B capable of measuring. When executing the exposure process of the substrate P or when executing the predetermined measurement process, the control device 9 operates the first and second drive systems based on the measurement result of the interferometer system 3 to thereby perform the mask stage. 1 (mask M) and position control of the substrate stage 2 (substrate P) are executed.

  The exposure apparatus EX of the present embodiment is a scanning exposure apparatus (so-called scanning stepper) that projects an image of the pattern of the mask M onto the substrate P while synchronously moving the mask M and the substrate P in a predetermined scanning direction. When the substrate P is exposed, the control device 9 controls the mask stage 1 and the substrate stage 2 so that the mask M and the substrate P are in the XY plane intersecting the optical axis of the projection system PS (the optical path of the exposure light EL). Move in a predetermined scanning direction. In the present embodiment, the scanning direction (synchronous movement direction) of the substrate P is the X-axis direction, and the scanning direction (synchronous movement direction) of the mask M is also the X-axis direction. During exposure of the substrate P, the mask stage 1 moves in the X-axis direction on the object plane side of the projection system PS while holding the mask M, and the substrate stage 2 holds the substrate P while holding the substrate P. Move in the X-axis direction on the image plane side. The control device 9 moves the substrate P in the X-axis direction relative to the projection region PR of the projection system PS on the image plane side of the projection system PS, and projects in synchronization with the movement of the substrate P in the X-axis direction. While moving the mask M in the X-axis direction relative to the illumination area IR of the illumination system IS on the object plane side of the system PS, the exposure light EL is irradiated onto the substrate P via the mask M and the projection system PS. Thereby, the pattern image of the mask M is projected onto the substrate P, and the substrate P is exposed with the exposure light EL from the mask M and the projection system PS.

  The transport system 4 can perform an operation of loading (loading) the substrate P into the substrate stage 2 and an operation of unloading (unloading) the substrate P from the substrate stage 2. In the present embodiment, the transport system 4 includes a first transport member 41 that can carry the substrate P into the substrate stage 2, and a second transport member 42 that carries the substrate P out of the substrate stage 2. In the present embodiment, the first transport member 41 is disposed above (the + Z direction) the second transport member 42.

  The transport system 4 uses the first transport member 41 to carry the unexposed substrate P into the substrate stage 2, and uses the second transport member 42 to unload the exposed substrate P from the substrate stage 2. In the following description, a process including at least one of an operation of loading the substrate P into the substrate stage 2 and an operation of unloading the substrate P from the substrate stage 2 is appropriately referred to as a substrate replacement process.

  The substrate stage 2 is movable between a position EP where the exposure light EL emitted from the projection system PS can be irradiated and a position CP where the substrate replacement process is executed. The position EP includes a position facing the exit surface of the projection system PS from which the exposure light EL is emitted. The position CP is a position different from the position EP, and in the present embodiment, the position CP is arranged on the + X side of the position EP. In the following description, the position EP is appropriately referred to as an exposure position EP, and the position CP is appropriately referred to as a substrate replacement position CP.

  When executing the substrate exchange process, the control device 9 moves the substrate stage 2 to the substrate exchange position CP. The control device 9 carries in the substrate P before exposure using the first transport member 41 to the substrate stage 2 disposed at the substrate exchange position CP. Further, the control device 9 carries out the exposed substrate P from the substrate stage 2 disposed at the substrate exchange position CP using the second transport member 42.

  In the present embodiment, the substrate P is loaded into the substrate stage 2 and unloaded from the substrate stage 2 while being supported by the tray Tr. In the present embodiment, the first transport member 41 can carry the tray Tr supporting the substrate P into the substrate stage 2. The second transport member 42 can carry out the tray Tr supporting the substrate P from the substrate stage 2. When the tray Tr supporting the substrate P is carried into the substrate stage 2, the substrate P is carried into the substrate stage 2. When the tray Tr supporting the substrate P is unloaded from the substrate stage 2, the substrate P is unloaded from the substrate stage 2.

  The tray Tr has a frame structure including a frame member and a plurality of rod members arranged in a lattice shape inside the frame member. The substrate stage 2 (holding unit 13) has a groove in which the frame member and the rod member of the tray Tr can be placed. The present invention relates to a tray having a frame structure capable of supporting a substrate P, a substrate stage (holding unit) having a groove in which at least a part of the tray can be disposed, and a conveyance system (conveying member) capable of conveying the tray while supporting the substrate P. Examples of the technology are disclosed in, for example, Japanese Patent Application Laid-Open Nos. 2001-100169, 2001-176947, 2003-258078, and 2004-273702. These techniques are applied to the tray Tr, the substrate stage 2, and the transfer system 4 according to this embodiment.

  When the tray Tr supporting the substrate P is carried into the substrate stage 2 by the first transport member 41, the tray Tr is disposed in the groove of the substrate stage 2, and the upper surface of the tray Tr is the upper surface (holding surface) of the holding unit 13. While being arranged further downward, the back surface of the substrate P is held by the holding portion 13. When the tray Tr is unloaded from the substrate stage 2 by the second transport member 42, the back surface of the substrate P is supported by the tray Tr, and the substrate P and the tray Tr are unloaded from the substrate stage 2 together.

  In the present embodiment, the exposure apparatus EX includes a relay unit (port unit) 15 disposed on the + X side of the substrate exchange position CP. The relay unit 15 includes a support mechanism 16 that can support the tray Tr. In the present embodiment, the support mechanism 16 has a plurality of rod members (pin members), and supports the tray Tr at the upper end of the rod members. The transport system 4 can transport the tray Tr supporting the substrate P between the relay unit 15 and the substrate stage 2. The tray Tr is movable between the relay unit 15 and the substrate stage 2 while supporting the substrate P.

  The temperature adjustment device 5 is disposed at a position different from the exposure position EP, the substrate replacement position CP, and the relay unit 15. The temperature adjustment device 5 can adjust the temperature of the substrate P that is not held by the substrate stage 2. The temperature adjustment device 5 includes a substrate holding member 5H that holds the substrate P, and a temperature adjustment mechanism 17 that adjusts the temperature of the substrate P held by the substrate holding member 5H. The temperature adjustment mechanism 17 includes a heater mechanism that can heat the substrate P and a cooling mechanism that can cool the substrate P. In the present embodiment, the temperature adjustment mechanism 17 is disposed inside the substrate holding member 5H.

  The temperature adjustment mechanism 17 may include an air supply nozzle having an air supply port that supplies gas adjusted to a predetermined temperature to the substrate P. The air supply port may be disposed at a position facing the substrate P held by the substrate holding member 5H, for example. The gas adjusted to a predetermined temperature is supplied to the substrate P from the air supply port, whereby the temperature of the substrate P is adjusted.

  In the present embodiment, the temperature of the substrate P before exposure is adjusted by the temperature adjustment device 5. For example, the substrate P that has been subjected to the pretreatment for the exposure process is transported to the temperature adjustment device 5 and held by the substrate holding member 5H of the temperature adjustment device 5. The pretreatment includes a coating process in which a photosensitive agent is applied to the substrate P. The control device 9 can control the temperature adjusting device 5 to adjust the temperature of the substrate P before exposure held by the substrate holding member 5H.

  The substrate P whose temperature has been adjusted by the temperature adjusting device 5 is transported to the relay unit 15. A tray Tr is arranged in the relay unit 15, and the substrate P whose temperature has been adjusted by the temperature adjustment device 5 is placed on the tray Tr arranged in the relay unit 15. Thereby, the substrate P before exposure is supported by the tray Tr in the relay unit 15. The control device 9 can transport the tray Tr supporting the substrate P in the relay unit 15 to the substrate stage 2 using the transport system 4 (first transport member 41).

  The temperature adjusting device 5 may adjust the temperature of the substrate P after exposure.

  The detection system 7 can detect at least one of the temperature of the substrate P and the temperature of the substrate stage 2 (holding unit 13). In the present embodiment, the detection system 7 is disposed at the relay unit 15, and is disposed at the substrate replacement position CP and the first detection device 71 that detects the temperature of the substrate P disposed at the relay unit 15. And a second detection device 72 capable of detecting at least one of the temperature of the substrate P and the temperature of the substrate stage 2.

  In the present embodiment, the first detection device 71 can detect the temperature of the substrate P in a non-contact manner. The second detection device 72 can detect at least one of the temperature of the substrate P and the temperature of the substrate stage 2 in a non-contact manner.

  In the present embodiment, the first detection device 71 includes a plurality of temperature sensors 73 that can detect the temperature of the substrate P in a non-contact manner. The second detection device 72 includes a plurality of temperature sensors 73 that can detect at least one of the temperature of the substrate P and the temperature of the substrate stage 2 in a non-contact manner. The temperature sensor 73 is, for example, an infrared radiation temperature sensor. The temperature sensor 73 is not limited to the infrared radiation temperature sensor as long as the temperature of the substrate P and the temperature of the substrate stage 2 can be detected without contact.

  The first detection device 71 may contact the substrate P and detect the temperature of the substrate P. The second detection device 72 may contact the substrate P (substrate stage 2) and detect the temperature of the substrate P (substrate stage 2). For example, the temperature sensor 73 may be a thermocouple temperature sensor.

  In the present embodiment, the first detection device 71 includes a temperature sensor 73 disposed in the relay unit 15. The first detection device 71 can detect the temperature of the substrate P arranged in the relay unit 15 using the temperature sensor 73. The temperature sensor 73 of the first detection device 71 is disposed below (−Z direction) from the tray Tr supported by the support mechanism 16. The temperature sensor 73 of the first detection device 71 can face the back surface of the substrate P supported by the tray Tr. The first detection device 71 can detect the temperature of the substrate P that is supported by the tray Tr. The first detection device 71 may detect the temperature of the substrate P that is not supported by the tray Tr. Further, the temperature sensor 73 of the first detection device 71 may be arranged at a position facing the surface of the substrate P.

  A plurality of temperature sensors 73 of the first detection device 71 are arranged in the XY plane. In the present embodiment, the first detection device 71 has five temperature sensors 73. The first detection device 71 can detect the temperatures of the center and the four corners of the back surface (front surface) of the substrate P using the five temperature sensors 73. The first detection device 71 can acquire information on the temperature of the substrate P and the temperature distribution on the front surface (back surface) of the substrate P based on the detection results of the plurality of temperature sensors 73.

  In the present embodiment, the second detection device 72 includes a temperature sensor 73 disposed at the substrate replacement position CP. The second detection device 72 can detect the temperature of the substrate P disposed at the substrate replacement position CP using the temperature sensor 73. The temperature sensor 73 of the second detection device 72 is disposed above (+ Z direction) the substrate stage 2 disposed at the substrate replacement position CP. The temperature sensor 73 of the second detection device 72 is disposed at the substrate exchange position CP and can face the surface of the substrate P held by the substrate stage 2. The second detection device 72 can detect the temperature of the substrate P held by the substrate stage 2. Note that the second detection device 72 may detect the temperature of the substrate P that is not held by the substrate stage 2. For example, the second detection device 72 can detect the temperature of the substrate P that is supported by the transport system 4 (the first and second transport members 41 and 42) via the tray Tr. Further, the temperature sensor 73 of the second detection device 72 may be disposed at a position facing the back surface of the substrate P.

  Further, in a state where the substrate stage 2 (holding unit 13) does not hold the substrate P, the second detection device 72 can detect the temperature of the substrate stage 2 (holding unit 13). In a state where the substrate stage 2 (holding unit 13) does not hold the substrate P, the temperature sensor 73 of the second detection device 72 can face the holding unit 13 of the substrate stage 2 disposed at the substrate exchange position CP. . The second detection device 72 can detect the temperature of the substrate stage 2 (holding unit 13) disposed at the substrate replacement position CP using the temperature sensor 73.

  A plurality of temperature sensors 73 of the second detection device 72 are arranged in the XY plane. In the present embodiment, the second detection device 72 has five temperature sensors 73. The second detection device 72 can detect the temperatures of the center and the four corners of the front surface (back surface) of the substrate P using the five temperature sensors 73. Further, the second detection device 72 can detect the temperatures of the center and the four corners of the upper surface of the substrate stage 2 (holding unit 13) using the five temperature sensors 73. The second detection device 72 can acquire information about the temperature of the substrate P and the temperature distribution on the front surface (back surface) of the substrate P based on the detection results of the plurality of temperature sensors 73. Further, the second detection device 72 acquires information on the temperature of the substrate stage 2 (holding unit 13) and the temperature distribution in the substrate stage 2 (holding unit 13) based on the detection results of the plurality of temperature sensors 73. Can do.

  FIG. 3 is a perspective view showing the vicinity of the illumination system IS, the mask stage 1, the projection system PS, and the substrate stage 2 according to the present embodiment.

  In the present embodiment, the projection system PS has a plurality of projection optical systems PL. A plurality of projection optical systems PL are arranged in an XY plane substantially parallel to the surface of the substrate P. The illumination system IS has a plurality of illumination modules IL so as to correspond to the plurality of projection optical systems PL. Further, as described above, the exposure apparatus EX of the present embodiment projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P synchronously in a predetermined scanning direction (X-axis direction). . That is, the exposure apparatus EX of the present embodiment is a so-called multi-lens scan exposure apparatus.

  In the present embodiment, the projection system PS has seven projection optical systems PL. The illumination system IS has seven illumination modules IL. The number of projection optical systems PL and illumination modules IL is not limited to seven. For example, the projection system PS has eleven projection optical systems PL, and the illumination system IS has eleven illumination modules IL. Also good.

  In the present embodiment, the illumination system IS illuminates each of the seven different illumination areas IR with the exposure light EL. The illumination system IS illuminates a portion of the mask M arranged in the illumination area IR with the exposure light EL having a uniform illuminance distribution. In the present embodiment, bright lines (g line, h line, i line) emitted from the mercury lamp LS are used as the exposure light EL emitted from the illumination system IS.

  In the present embodiment, the projection system PS projects an image of the pattern of the mask M on each of seven different projection areas PR. The projection system PS projects an image of the pattern of the mask M at a predetermined projection magnification onto a portion of the substrate P arranged in the projection region PR.

  FIG. 4 is a diagram showing an example of the projection system PS according to the present embodiment and the substrate stage 2 arranged in the projection region PR.

  The projection system PS includes an imaging characteristic adjusting device 30 that adjusts the imaging characteristics (optical characteristics) of the projection system PS. The imaging characteristic adjusting device 30 is provided in each of the plurality of projection optical systems PL.

  Hereinafter, with reference to FIG. 4, one projection optical system PL among the plurality of projection optical systems PL and the imaging characteristic adjusting device 30 provided in the projection optical system PL will be described. Since the configuration of the one projection optical system PL and the configuration of the other projection optical system PL are the same, the description of the other projection optical system PL is omitted.

  The projection optical system PL forms an image of the pattern of the mask M illuminated with the exposure light EL by the illumination module IL on the substrate P at an equal magnification. The imaging characteristic adjusting device 30 includes an image plane adjusting unit 33, a shift adjusting unit 34, two sets of catadioptric optical systems 31 and 32, a field stop 35, a rotation adjusting unit 36, and a scaling adjusting unit 37. It has.

  The exposure light EL irradiated to the illumination area IR and transmitted through the mask M enters the image plane adjustment unit 33. The image plane adjustment unit 33 can adjust the position of the image plane of the projection optical system PL in the Z-axis, θX, and θY directions. The image plane adjustment unit 33 has two wedge-shaped optical members, and adjusts the position of the image plane of the projection optical system PL in the Z axis, θX, and θY directions by moving at least one of the optical members. can do.

  The exposure light EL that has passed through the image plane adjustment unit 33 enters the shift adjustment unit 34. The shift adjustment unit 34 can adjust the position of the projection image (the pattern image of the mask M) of the projection optical system PL in the X-axis and Y-axis directions. The shift adjustment unit 34 has two optical members made of parallel plates, and adjusts the position of the projection image of the projection optical system PL in the X-axis and Y-axis directions by moving at least one of the optical members. be able to.

  The exposure light EL transmitted through the shift adjustment unit 34 enters the first set of catadioptric optical system 31. The catadioptric optical system 31 includes a right-angle prism, a lens, and a concave mirror. The catadioptric optical system 31 forms an intermediate image of the pattern of the mask M. The exposure light EL emitted from the catadioptric optical system 31 is supplied to the field stop 35. The field stop 35 is disposed at the position of the intermediate image of the pattern formed by the catadioptric optical system 31. The field stop 35 defines the projection region PR and the illumination region IR. In the present embodiment, the field stop 35 defines the projection region PR on the substrate P and the illumination region IR on the mask M in a trapezoidal shape. The exposure light EL that has passed through the field stop 35 enters the second set of catadioptric optical system 32. The catadioptric optical system 32 is configured in the same manner as the catadioptric optical system 31.

  The rotation adjusting unit 36 can adjust the position of the projection image (the pattern image of the mask M) of the projection optical system PL in the θZ direction. The rotation adjustment unit 36 includes right-angle prisms of the catadioptric optical systems 31 and 32, and adjusts the position of the projection image of the projection optical system PL in the θZ direction by moving at least one of the right-angle prisms. it can.

  The exposure light EL emitted from the catadioptric optical system 32 enters the scaling adjustment unit 37. The scaling adjustment unit 37 can adjust the magnification (scaling) of the pattern image of the mask M. The scaling adjustment unit 37 has, for example, a concave lens, a convex lens, and a concave lens, and adjusts the magnification (scaling) of the pattern image of the mask M by moving the convex lens located between the two concave lenses in the Z-axis direction. can do.

  FIG. 5 is a schematic diagram showing an example of the positional relationship between the projection regions PR (PR1 to PR7) of each of the seven projection optical systems PL and the substrate P, and shows the positional relationship in a plane including the surface of the substrate P. ing. As shown in FIG. 5, in the present embodiment, each of the seven projection regions PR1 to PR7 is trapezoidal in the XY plane. The seven projection areas PR1 to PR7 are arranged around the center AX of the projection system PS. In the present embodiment, four projection regions PR1, PR3, PR5, PR7 are arranged at substantially equal intervals in the Y-axis direction, and three projection regions PR2, PR4, PR6 are arranged at substantially equal intervals in the Y-axis direction. Has been. The projection areas PR1, PR3, PR5, and PR7 are arranged on the −X side with respect to the projection areas PR2, PR4, and PR6. Further, the projection areas PR2, PR4, and PR6 are arranged between the projection areas PR1, PR3, PR5, and PR7 with respect to the Y-axis direction.

  Next, an example of a method for exposing the substrate P using the exposure apparatus EX having the above-described configuration will be described with reference to a flowchart of FIG. 6 and schematic diagrams of FIGS.

  In the present embodiment, the exposure apparatus EX sequentially exposes a plurality of substrates P. Hereinafter, for the sake of simplicity of explanation, a case where the first substrate P1 of the plurality of substrates P is exposed and then the second substrate P2 is exposed will be described as an example.

  As shown in FIG. 6, in the present embodiment, a process (step SA1) for acquiring first temperature information related to the temperature of the first substrate P1 before exposure, and the exposure light EL is applied to the first substrate P1, Based on the process of exposing the first substrate P1 (step SA2), the process of acquiring second temperature information related to the temperature after the exposure of the first substrate P1 (step SA3), and the first temperature information and the second temperature information. Then, the process of adjusting the exposure conditions for the second substrate P2 to expose the second substrate P2 (step SA5) is executed.

  The first substrate P1 before exposure is carried into the exposure apparatus EX from an external apparatus. The external device includes a coating device that forms a film of a photosensitive agent on the substrate P. The temperature of the first substrate P1 carried into the exposure apparatus EX from the external apparatus is adjusted by the temperature adjustment apparatus 5. The first substrate P1 whose temperature has been adjusted by the temperature adjusting device 5 is transported to the relay unit 15 and placed on the tray Tr.

  The control device 9 executes a process of acquiring first temperature information related to the temperature of the first substrate P1 before exposure (Step SA1). In the present embodiment, the process of acquiring the first temperature information includes a process of detecting the temperature of the first substrate P1 before the exposure of the first substrate P1. The control device 9 uses the detection system 7 to detect the temperature of the first substrate P1.

  As shown in FIG. 7, the control device 9 detects the temperature before exposure of the first substrate P <b> 1 arranged in the relay unit 15 using the temperature sensor 73 of the first detection device 71. In the relay unit 15, the first substrate P1 is supported by the tray Tr. The first detection device 71 detects the temperature of the first substrate P1 supported by the tray Tr.

  In the relay unit 15, a rough alignment process (pre-alignment process) of the first substrate P1 (tray Tr) with respect to the substrate stage 2 is performed. For example, the position of the first substrate P1 in the θZ direction is detected by the line sensor provided in the relay unit 15, and the pre-alignment process of the first substrate P1 is executed based on the detection result.

  After the process of detecting the temperature of the first substrate P1 by the first detection device 71 is completed, the control device 9 uses the first transport member 41 to place the tray Tr supporting the first substrate P1 on the substrate stage 2. Carry in. The substrate stage 2 is disposed at the substrate exchange position CP, and the control device 9 carries the tray Tr supporting the first substrate P1 into the substrate stage 2 at the substrate exchange position CP. Accordingly, at least a part of the tray Tr is disposed in the groove of the substrate stage 2 (holding unit 13), and the first substrate P1 is held by the substrate stage 2 (holding unit 13).

  As shown in FIG. 8, the control device 9 detects the temperature of the first substrate P <b> 1 before exposure using the temperature sensor 73 of the second detection device 72 at the substrate replacement position CP. The second detection device 72 detects the temperature of the first substrate P1 held by the substrate stage 2 at the substrate replacement position CP.

  In the present embodiment, the process of acquiring the first temperature information related to the temperature before the exposure of the first substrate P1 is performed by using the first detection device 71 in the relay unit 15 and the first substrate P1 before the exposure of the first substrate P1. A process of detecting the temperature and a process of detecting the temperature of the first substrate P1 before the exposure of the first substrate P1 using the second detection device 72 at the substrate exchange position CP are included. In the present embodiment, the first temperature information is an average of the temperature before exposure of the first substrate P1 detected by the first detection device 71 and the temperature before exposure of the first substrate P1 detected by the second detection device 72. Contains a value. The first temperature information may include the temperature before exposure of the first substrate P1 detected by either the first detection device 71 or the second detection device 72.

  After the process of detecting the temperature of the first substrate P1 by the second detection device 72 is completed, the control device 9 moves the substrate stage 2 holding the first substrate P1 before exposure from the substrate exchange position CP to the exposure position EP. Moving.

  Note that the mask M is held on the mask stage 1 at least before the exposure of the first substrate P1 is started. Further, at least before the exposure of the first substrate P1 is started, a setup process such as a baseline measurement process is performed. In the baseline measurement process, the positional relationship (baseline amount) between the position of the pattern image of the mask M (the position of the projection region PR) by the projection system PS and the detection region of the mark detection device that detects the alignment mark on the substrate P. This is a process for measuring. Further, the control device 9 detects the alignment mark on the substrate P with the mark detection device before the exposure of the first substrate P1 is started, and exposes the exposure target region (shot region) of the first substrate P1 with respect to the projection region PR. ) Position.

  As shown in FIG. 9, the control device 9 moves the substrate stage 2 holding the first substrate P1 to the projection region PR, and starts a process of exposing the first substrate P1 (step SA2). The control device 9 controls the mask stage 1 and the substrate stage 2 to move the mask M in the X-axis direction with respect to the illumination region IR on the object plane side of the projection system PS (projection optical system PL), while projecting the projection system. Exposure light EL is emitted from the illumination system IS while moving the substrate P in the X-axis direction with respect to the projection region PR on the image plane side of PS (projection optical system PL). Thus, the first substrate P1 is exposed with the exposure light EL from the mask M and the projection system PS (projection optical system PL) while moving in the X-axis direction with respect to the projection region PR.

  After the exposure processing of the first substrate P1 is completed, the control device 9 moves the substrate stage 2 holding the first substrate P1 after the exposure from the exposure position EP to the substrate replacement position CP.

  The control device 9 executes a process of acquiring second temperature information related to the temperature after exposure of the first substrate P1 (step SA3). In the present embodiment, the process of acquiring the second temperature information includes a process of detecting the temperature of the first substrate P1 after the exposure of the first substrate P1. The control device 9 uses the detection system 7 to detect the temperature after the exposure of the first substrate P1.

  The control device 9 detects the temperature after the exposure of the first substrate P1 using the temperature sensor 73 of the second detection device 72 at the substrate replacement position CP. The second detection device 72 detects the post-exposure temperature of the first substrate P1 held by the substrate stage 2 at the substrate replacement position CP.

  After the processing for detecting the temperature after the exposure of the first substrate P1 by the second detection device 72 is completed, the control device 9 uses the second transport member 42 to transfer the tray Tr supporting the first substrate P1 to the substrate. Unload from stage 2. The control device 9 carries out the tray Tr supporting the first substrate P1 from the substrate stage 2 arranged at the substrate exchange position CP. The first substrate P1 is unloaded from the substrate stage 2 together with the tray Tr.

  The control device 9 controls the second transport member 42 and transports the tray Tr supporting the first substrate P <b> 1 to the relay unit 15. The control device 9 detects the temperature after exposure of the first substrate P <b> 1 disposed in the relay unit 15 using the temperature sensor 73 of the first detection device 71. In the relay unit 15, the first substrate P1 is supported by the tray Tr. The first detection device 71 detects the temperature after exposure of the first substrate P1 supported by the tray Tr.

  In the present embodiment, the process of acquiring the second temperature information related to the temperature after the exposure of the first substrate P1 is performed by using the second detection device 72 at the substrate replacement position CP, and the first substrate P1 after the exposure of the first substrate P1. And a process of detecting the temperature of the first substrate P1 after the exposure of the first substrate P1 using the first detection device 71 in the relay unit 15. In the present embodiment, the second temperature information is an average of the temperature after exposure of the first substrate P1 detected by the second detection device 72 and the temperature after exposure of the first substrate P1 detected by the first detection device 71. Contains a value. The second temperature information may include the post-exposure temperature of the first substrate P1 detected by either the first detection device 71 or the second detection device 72.

  The exposed first substrate P1 is unloaded from the exposure apparatus EX to an external apparatus. The external device includes a developer device that develops the substrate P (photosensitive agent).

  Based on the first temperature information and the second temperature information acquired by using the detection system 7, the control device 9 expands and contracts at the time of exposure of the second substrate P2 exposed after the first substrate P1 (thermal deformation amount). ) Is estimated (step SA4).

  In the present embodiment, the controller 9 detects the second substrate P2 during the exposure based on the temperature before the exposure of the first substrate P1 and the temperature after the exposure of the first substrate P1 detected by using the detection system 7. Estimate the amount of expansion and contraction.

In the present embodiment, the control device 9 determines the first substrate P1 relative to the size of the substrate P at the reference temperature T ₀ (for example, 23 ° C.) based on the temperature difference of the first substrate P1 before and after exposure. The amount of expansion / contraction at the time of exposure of the second substrate P2 exposed after is estimated.

In the present embodiment, the storage device 10 stores characteristic information including information on the size of the substrate P at the reference temperature T ₀ and the physical properties of the substrate P.

  FIG. 10 is a schematic diagram illustrating an example of characteristic information stored in the storage device 10. The information on the physical properties of the substrate P includes information on the material characteristics of the substrate P and the thermal expansion coefficient according to the material characteristics. In FIG. 10, the horizontal axis represents the temperature T of the substrate P, and the vertical axis represents the size (plate size) S of the substrate P. Line L1 shows the relationship between temperature T and size S related to substrate Pa having the first physical property (first thermal expansion coefficient), and line L2 relates to substrate Pb having the second physical property (second thermal expansion coefficient). A relationship between the temperature T and the size S is shown, and a line L3 shows a relationship between the temperature T and the size S regarding the substrate Pc having the third physical property (third thermal expansion coefficient).

There is a possibility that the substrate P expands and contracts (thermally deforms) by the exposure light EL irradiation. That is, since the substrate P is heated by the irradiation of the exposure light EL, the substrate P may expand and contract due to the heat. For example, the first substrate P1 is, when a substrate Pa having a first physical property, when the temperature T of the first board P1 is the reference temperature T _0, the size S of the first substrate P1 at the reference temperature T ₀ the reference is the size _{S 0.} For example, the temperature T of the first board P1 is changed with respect to the reference temperature _{T 0,} when it becomes the first temperature _{T 1,} the size S of the first substrate P1 at the first temperature _{T 1,} the first size It is the _{S 1.} Further, the temperature T of the first board P1 is, when a second temperature _{T 2,} the size S of the first substrate P1 at the second temperature _{T 2} is a second size _{S 2.}

The relationship between the temperature T of the substrate P (first substrate P1) and the size (plate size) S of the substrate P (first substrate P1) is stored in the storage device 10 as known information. . In other words, the storage device 10, with respect to the reference size _{S 0} of the substrate P at the reference temperature _{T 0,} information on the size S of the substrate P at any temperature _(T 1, _{T 2,} etc.), i.e., the substrate P Information relating to the amount of expansion / contraction of the substrate P with respect to the reference size S ₀ according to the temperature change of the (first substrate P1) is stored in the storage device 10 as known information.

In the present embodiment, the temperature T of the first substrate P after the exposure before the exposure is detected, the first temperature information including the information about the temperature before the exposure of the first substrate P1, and after the exposure of the first substrate P1. Since the second temperature information including the information related to the temperature is acquired, the control device 9 is based on the characteristic information stored in the storage device 10, the first temperature information, and the second temperature information. The amount of expansion / contraction of the first substrate P1 after the exposure relative to the size of the first substrate P1 before the exposure due to the exposure light EL can be obtained. That is, the control unit 9, the exposure light EL, with respect to the size of the first substrate P1 at the reference temperature T _0, it can be determined whether the first board P1 is how to stretch.

In the present embodiment, the first substrate P1 and the second substrate P2 have the same physical properties (thermal expansion coefficient, etc.). The size of the first substrate P1 at the reference temperature T ₀ and the size of the second substrate P2 are the same. The temperature of the first substrate P1 is adjusted by the temperature adjusting device 5 before exposure, and the temperature of the second substrate P2 is also adjusted by the temperature adjusting device 5 before exposure. Accordingly, the temperature and size of the first substrate P1 before exposure and the temperature and size of the second substrate P2 before exposure are substantially the same.

Therefore, the control device 9 includes the characteristic information including information regarding the reference size S ₀ and the physical properties at the reference temperature T ₀ of the substrate P (first and second substrates P1, P2), the first temperature information, and the second temperature information. Based on the above, the expansion / contraction amount of the second substrate P2 at the time of exposure (immediately after exposure) with respect to the size of the second substrate P2 before exposure can be estimated.

For example, the size (plate size) after exposure of the second substrate P2 is S ₂ , the size (plate size) of the second substrate P2 before exposure is S ₀ , the thermal expansion coefficient of the second substrate P2 is B, When the temperature difference between before and after exposure of one substrate P1 is ΔT,
S ₂ = S ₀ × B × ΔT
It becomes.

  Next, a procedure for exposing the second substrate P2 will be described.

  The second substrate P2 before exposure is carried into the exposure apparatus EX from the external apparatus. The temperature of the second substrate P2 carried into the exposure apparatus EX from the external device is adjusted by the temperature adjusting device 5. The temperature adjustment device 5 adjusts the temperature of the second substrate P2 that is not held by the substrate stage 2. The second substrate P2 whose temperature has been adjusted by the temperature adjusting device 5 is transported to the relay unit 15 and placed on the tray Tr.

  The controller 9 uses the first transport member 41 to carry the tray Tr supporting the first substrate P1 into the substrate stage 2. The substrate stage 2 is disposed at the substrate exchange position CP, and the control device 9 carries the tray Tr supporting the first substrate P1 into the substrate stage 2 at the substrate exchange position CP. Accordingly, at least a part of the tray Tr is disposed in the groove of the substrate stage 2 (holding unit 13), and the first substrate P1 is held by the substrate stage 2 (holding unit 13).

  The control device 9 moves the substrate stage 2 holding the second substrate P2 before exposure from the substrate exchange position CP to the exposure position EP.

  The control device 9 starts the process of moving the substrate stage 2 holding the second substrate P2 to the projection region PR and exposing the second substrate P2.

  In the present embodiment, the second substrate P2 is exposed by adjusting the exposure conditions based on the expansion / contraction amount (size) at the time of exposure of the second substrate P2 estimated in step SA4 (step SA5).

  The adjustment of the exposure condition includes adjustment of the projection region PR. That is, the adjustment of the exposure condition includes the adjustment of the projection condition of the projection optical system PL.

  11 to 14 are schematic diagrams illustrating an example of the projection region PR adjusted according to the amount of expansion / contraction of the second substrate P2.

For example, when it is estimated that the second substrate P2 is extended (expanded) in the X-axis direction due to the exposure light EL irradiation, the control device 9 controls the imaging characteristic adjustment device 30 (shift adjustment unit 34). The positions of the projection areas PR1 to PR7 are adjusted. For example, as shown in FIG. 11, the control unit 9, the reference position of the projection area PR1~PR7 suitable for exposing the substrate P reference temperature _{T 0} (in FIG. 11, indicated by a broken line), the projection The positions of the regions PR1 to PR7 are shifted in the X axis direction.

The reference position of the projection area PR1~PR7 suitable for exposing the substrate P reference temperature T _0, in case the temperature of the substrate P during the exposure is the reference temperature T _0, it is formed on the substrate P previously The positions of the projection areas PR1 to PR7 (positions of the projection areas PR1 to PR7 with respect to the center AX) where the next pattern can be superimposed on the pattern (layer) in a desired positional relationship.

  For example, the control device 9 causes the projection areas PR1, PR3, PR5, PR7 and the projection areas PR2, PR4, PR6 to be separated from each other with respect to the X-axis direction, in other words, the projection areas PR1, PR3, PR5, PR7. The imaging characteristic adjustment device 30 (shift adjustment unit 34) is controlled so that the projection regions PR2, PR4, and PR6 shift in the + X direction from the reference position and shift in the −X direction from the reference position. Adjust the position of PR7. Thus, when the second substrate P2 is exposed to the projection regions PR1 to PR7 while moving in the X-axis direction, even if the second substrate P2 extends in the X-axis direction, it is first formed on the second substrate P2. The pattern image is projected onto the second substrate P2 such that the next pattern overlaps the pattern (layer) to be formed in a desired positional relationship.

  Further, when it is estimated that the second substrate P2 is contracted in the X-axis direction due to the exposure light EL irradiation, for example, as shown in FIG. 12, the control device 9 has projection regions PR1, PR3, PR5, PR7, In other words, the projection areas PR1, PR3, PR5, and PR7 are shifted from the reference position in the + X direction so that the projection areas PR2, PR4, and PR6 are close to each other in the X-axis direction, and the projection areas PR2, PR4, and PR6 are the reference positions. The imaging characteristic adjusting device 30 (shift adjusting unit 34) is controlled so as to shift in the −X direction from the position, thereby adjusting the positions of the projection regions PR1 to PR7. Thus, when the second substrate P2 is exposed to the projection regions PR1 to PR7 while moving in the X-axis direction, even if the second substrate P2 shrinks in the X-axis direction, the second substrate P2 is first formed on the second substrate P2. The pattern image is projected onto the second substrate P2 such that the next pattern overlaps the pattern (layer) to be formed in a desired positional relationship.

  When it is estimated that the second substrate P2 expands and contracts in the Y-axis direction due to the exposure light EL irradiation, as shown in FIG. 13, the control device 9 causes the imaging characteristic adjustment device 30 (shift adjustment unit 34) to move. By controlling, the positions of the projection regions PR1 to PR7 are shifted in the Y-axis direction with respect to the reference position. For example, when it is estimated that the second substrate P2 extends in the Y-axis direction, each of the projection regions PR1 to PR7 shifts away from the center AX. On the other hand, when it is estimated that the second substrate P2 is contracted in the Y-axis direction, the projection regions PR1 to PR7 are shifted so as to approach the center AX. Thereby, even when the second substrate P2 expands and contracts in the Y-axis direction during exposure, the next pattern overlaps with the pattern (layer) formed on the second substrate P2 first in a desired positional relationship. An image of the pattern is projected onto the second substrate P2.

Further, when it is estimated that the second substrate P2 expands and contracts in the Y-axis direction due to the exposure light EL irradiation, as shown in FIG. 14, the control device 9 moves the imaging characteristic adjustment device 30 (scaling adjustment unit 37). controlled to the reference size of the projection area PR1～PR7 suitable for exposing the substrate P reference temperature _{T 0} (in FIG. 14, indicated by a broken line) with respect to the size of the projection area PR1～PR7 (magnification , Scaling). As a result, even when the second substrate P2 expands and contracts in the X-axis direction and the Y-axis direction during exposure, the next pattern has a desired positional relationship with the pattern (layer) formed on the second substrate P2 first. The pattern image is projected onto the second substrate P2 so as to overlap.

The reference size of the projection area PR1~PR7 suitable for exposing the substrate P reference temperature T _0, in case the temperature of the substrate P during the exposure is the reference temperature T _0, formed on the substrate P previously This is the size of the projection areas PR1 to PR7 in which the next pattern can be overlaid on the pattern (layer) that has been formed in a desired positional relationship.

  When it is estimated that the second substrate P2 expands and contracts in the Y-axis direction, the control device 9 adjusts the position of the projection areas PR1 to PR7 in the Y-axis direction by the shift adjustment unit 34 and the projection area by the scaling adjustment unit 37. It is desirable to perform both adjustments of the sizes of PR1 to PR7. As a result, for example, as shown in FIG. 14, the substrate P is exposed while moving in the X-axis direction, and overlaps on the substrate P, for example, a part (joint portion) TG of the projection region PR6 adjacent in the Y-axis direction. While adjusting the positional relationship with a part (joint portion) TG of the projection region PR7, the next pattern overlaps with the desired positional relationship on the pattern (layer) previously formed on the second substrate P2. An image of the pattern can be projected onto the second substrate P2. Similarly, the positional relationship between the joint portion of the projection region PR2 and the joint portion of the projection region PR3 can be adjusted. The positional relationship between the joint of the projection region PR3 (PR4, PR5, PR6) and the joint of the projection region PR4 (PR5, PR6, PR7) can also be adjusted.

Further, the adjustment of the exposure condition may include adjustment of the moving speed of the second substrate P2 during exposure in the X-axis direction (scanning direction). For example, by irradiation of the exposure light EL, when the second substrate P2 is estimated to stretch with respect to the X-axis direction, the control unit 9, the substrate in the X-axis direction that is suitable for exposing the substrate P reference temperature T ₀ P The moving speed of the substrate P (substrate stage 2) is changed with respect to the reference moving speed of (substrate stage 2). Thus, when the second substrate P2 is exposed to the projection regions PR1 to PR7 while moving in the X-axis direction, even if the second substrate P2 expands and contracts in the X-axis direction, the second substrate P2 is first applied to the second substrate P2. The pattern image is projected onto the second substrate P2 so that the next pattern overlaps the pattern (layer) to be formed in a desired positional relationship.

Incidentally, reference moving speed of the substrate P that is suitable for exposing the substrate P reference temperature T _0, in case the temperature of the substrate P during the exposure is the reference temperature T _0, it is formed on the substrate P previously This is the moving speed of the substrate P in the X-axis direction in which the next pattern can be superimposed on the pattern (layer) in a desired positional relationship.

Further, the adjustment of the exposure condition may include adjustment of the speed ratio between the mask M and the second substrate P2 in the X-axis direction (scanning direction). For example, by irradiation of the exposure light EL, when it is estimated that the second substrate P2 extending in the X-axis direction, the control unit 9, the mask in the X-axis direction that is suitable for exposing the substrate P reference temperature T ₀ M The speed ratio is changed with respect to the speed ratio between (mask stage 1) and substrate P (substrate stage 2).

Incidentally, the speed ratio between the mask M and the substrate P that is suitable for exposing the substrate P reference temperature T _0, in case the temperature of the substrate P during the exposure is the reference temperature T _0, formed on the substrate P previously This is the speed ratio between the mask M and the substrate P in the X-axis direction that allows the next pattern to be superimposed on the pattern (layer) in a desired positional relationship.

  As described above, in the present embodiment, the projection optical system PL forms an image of the pattern of the mask M on the substrate P at an equal magnification. For example, when exposure is performed while moving the substrate P in the −X direction, the mask M is also moved in the −X direction. When exposure is performed while the substrate P is moved in the + X direction, the mask M is also moved in the + X direction. Further, the moving speed of the substrate P and the moving speed of the mask M when exposing the substrate P are substantially equal.

For example, when the movement speed of the mask M in the X-axis direction suitable for exposing the substrate P at the reference temperature T ₀ is the reference speed Vm and the movement speed of the substrate P is the reference speed Vp, the second substrate P2 is exposed during exposure. Is estimated to extend in the X-axis direction, the control device 9 makes the moving speed of the second substrate P2 faster than the reference speed Vp and sets the moving speed of the mask M as a reference when the second substrate P2 is exposed. At least one of lowering than the speed Vm is executed. Thus, when the exposure is performed while moving the mask M and the second substrate P2 in the X-axis direction with respect to the projection regions PR1 to PR7, even if the second substrate P2 extends in the X-axis direction, the second substrate first. The pattern image is projected onto the second substrate P2 such that the next pattern overlaps the pattern (layer) formed on P2 in a desired positional relationship.

Further, when the moving speed of the mask M in the X-axis direction suitable for exposing the substrate P at the reference temperature T ₀ is the reference speed Vm, and the moving speed of the substrate P is the reference speed Vp, the second substrate P2 is exposed during the exposure. Is estimated to shrink in the X-axis direction, the control device 9 makes the movement speed of the second substrate P2 slower than the reference speed Vp and the movement speed of the mask M as a reference when the second substrate P2 is exposed. At least one of the speeds higher than the speed Vm is executed. Thus, when the exposure is performed while moving the mask M and the second substrate P2 in the X-axis direction with respect to the projection regions PR1 to PR7, even if the second substrate P2 is contracted in the X-axis direction, the second substrate is first processed. The pattern image is projected onto the second substrate P2 such that the next pattern overlaps the pattern (layer) formed on P2 in a desired positional relationship.

  As described above, the control device 9 adjusts the exposure condition for the second substrate P2 based on the first temperature information and the second temperature information acquired by detecting the temperature of the first substrate P1, and then performs the second operation. The substrate P2 is exposed.

  After the exposure processing for the second substrate P2 is completed, the control device 9 moves the substrate stage 2 holding the second substrate P2 after the exposure from the exposure position EP to the substrate replacement position CP.

  The control device 9 uses the second transport member 42 to carry out the tray Tr supporting the second substrate P2 from the substrate stage 2. The control device 9 carries out the tray Tr supporting the second substrate P2 from the substrate stage 2 disposed at the substrate replacement position CP. The second substrate P2 is unloaded from the substrate stage 2 together with the tray Tr.

  The control device 9 controls the second transport member 42 to transport the tray Tr supporting the second substrate P <b> 2 to the relay unit 15. The exposed second substrate P2 is unloaded from the exposure apparatus EX to an external apparatus. The external device includes a developer device that develops the substrate P (photosensitive agent).

  Thereafter, the third, fourth,..., Nth substrates are sequentially exposed in the same procedure as the procedure for exposing the second substrate P2.

  As described above, according to the present embodiment, in the case of sequentially exposing a plurality of substrates P, the first temperature information related to the temperature before exposure of the first substrate P1 and the temperature after exposure of the first substrate P1. Based on the second temperature information, the expansion amount at the time of exposure of the second substrate P2 exposed after the first substrate P1 is estimated, and the exposure condition for the second substrate P2 is adjusted based on the estimated expansion amount. Since the second substrate P2 is exposed, the pattern can be formed on the second substrate P2 in an initial state. For example, the next pattern can be superimposed on the pattern (layer) previously formed on the second substrate P2 in a desired positional relationship. Therefore, it can suppress that a defect arises in the pattern formed in the 2nd board | substrate P2, and generation | occurrence | production of exposure failure and generation | occurrence | production of a defective device can be suppressed.

  In addition, according to the present embodiment, it is only necessary to perform an operation for acquiring temperature information (operation for detecting the temperature of the first substrate P1 using the detection system 7) for the first substrate P1 (for example, the first substrate of the lot). Without performing the subsequent temperature information acquisition operation for the second, third,..., Nth substrates, the amount of expansion / contraction at the time of exposure of the second, third,. . Therefore, it is possible to suppress a decrease in pattern overlay accuracy when exposing the second, third,..., Nth substrates while suppressing a decrease in throughput.

  In the present embodiment, the process of acquiring the first temperature information includes detecting the temperature of the first substrate P1 before exposure using the detection system 7, but before the exposure of the first substrate P1. It may include detecting the temperature of the substrate stage 2 (holding unit 13). For example, the second detection device 72 detects the temperature of the substrate stage 2 (holding unit 13) immediately before the first substrate P1 that is placed at the substrate exchange position CP and is not carried into the holding unit 13 is detected. The detected temperature of the holding unit 13 may be the first temperature information. By being held by the holding unit 13, the temperature of the first substrate P <b> 1 becomes substantially the same as the temperature of the holding unit 13. That is, the temperature of the holding unit 13 and the temperature of the first substrate P1 can be regarded as equivalent. Therefore, the temperature of the holding unit 13 may be the first temperature information.

  Similarly, the process of acquiring the second temperature information may include detecting the temperature of the substrate stage 2 (holding unit 13) after the exposure of the first substrate P1. For example, the second detection device 72 detects the temperature of the substrate stage 2 (holding unit 13) immediately after the exposed first substrate P1 is loaded from the holding unit 13 and is disposed at the substrate exchange position CP. The detected temperature of the holding unit 13 may be the second temperature information.

<Second Embodiment>
Next, a second embodiment will be described. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  In the first embodiment, only the temperature before and after the exposure of the first substrate P1 is detected, and the temperature of the second substrate P2 is not detected. A characteristic part of the second embodiment, which is different from the first embodiment, is to obtain third temperature information related to the temperature of the second substrate P2 before exposure.

  FIG. 15 is a flowchart illustrating an example of a method for exposing the substrate P according to the second embodiment. As shown in FIG. 15, in the present embodiment, a process (step SB1) for acquiring first temperature information related to the temperature of the first substrate P1 before exposure, and the exposure light EL is irradiated to the first substrate P1, A process of exposing the first substrate P1 (step SB2), a process of acquiring second temperature information related to the temperature after exposure of the first substrate P1 (step SB3), and a third related to the temperature of the second substrate P2 before exposure. Based on the process of acquiring temperature information (step SB4), the characteristic information stored in the storage device 10, the first temperature information, the second temperature information, and the third temperature information, exposure to the second substrate P2 The process of adjusting the conditions and exposing the second substrate P2 (step SB6) is executed.

  Steps SB1 to SB3 shown in FIG. 15 are the same processes as steps SA1 to SA3 according to the first embodiment described above with reference to FIG.

  When the second temperature information is acquired and the second substrate P2 before exposure is carried into the exposure apparatus EX from the external device, the control device 9 adjusts the temperature of the second substrate P2 by the temperature adjustment device 5. Thereafter, the control device 9 uses the detection system 7 to detect the temperature of the second substrate P2, and acquires third temperature information (step SB4).

  Based on the characteristic information stored in the storage device 10, the first temperature information and the second temperature information, and the third temperature information acquired by using the detection system 7, the control device 9 performs the second substrate P2. The amount of expansion / contraction (thermal deformation amount) at the time of exposure is estimated (step SB5).

  In the present embodiment, since the third temperature information is acquired, the size of the second substrate P2 before exposure (plate size) based on the third temperature information and the characteristic information stored in the storage device 10. ) S0 'can be estimated.

That is, the temperature adjustment device 5, although the temperature of the pre-exposure of the second substrate P2 is adjusted so that the reference temperature T _0, a possibility that the temperature of the pre-exposure of the second substrate P2 is different from the reference temperature T ₀ is is there.

  In the present embodiment, after the temperature adjustment by the temperature adjustment device 5, the temperature of the second substrate P2 before exposure is detected by the detection system 7, thereby accurately acquiring information about the temperature before exposure of the second substrate P2. be able to.

  Therefore, the control device 9 uses the second substrate based on the third temperature information acquired using the detection system 7, the first temperature information and the second temperature information, and the characteristic information stored in the storage device 10. The expansion / contraction amount (plate size) at the time of exposure of P2 can be estimated more accurately.

For example, the size (plate size) after exposure of the second substrate P2 is S ₂ ′, the size (plate size) of the second substrate P2 before exposure is S ₀ ′, and the thermal expansion coefficient of the second substrate P2 is B When the temperature difference between before and after the exposure of the first substrate P1 is ΔT,
S ₂ '= S ₀ ' × B × ΔT
It becomes.

  The control device 9 adjusts the exposure conditions based on the expansion / contraction amount (size) at the time of exposure of the second substrate P2 estimated in Step SB5, and exposes the second substrate P2 (Step SB6).

  As in the first embodiment described above, the exposure conditions are adjusted by adjusting the projection region PR, adjusting the projection conditions of the projection optical system PL, adjusting the moving speed of the second substrate P2, and between the mask M and the second substrate P2. Including at least one adjustment of the speed ratio. A description of adjusting the exposure conditions is omitted.

  As described above, also in this embodiment, it is possible to suppress the occurrence of defects in the pattern formed on the second substrate P2, and it is possible to suppress the occurrence of defective exposure and the generation of defective devices.

  In the first and second embodiments described above, the control device 9 controls the temperature adjustment device 5 on the basis of the temperature of the substrate stage 2 (holding unit 13) after the exposure of the first substrate P1, and the substrate stage 2 The temperature of the second substrate P2 when the (holding unit 13) is not held can be adjusted.

  The control device 9 unloads the first substrate P1 after exposure from the substrate stage 2 (holding unit 13), and then uses the temperature sensor 73 of the second detection device 72 to expose the substrate stage 2 after exposure of the first substrate P1. The temperature of (holding unit 13) can be detected.

  The controller 9 detects the temperature of the second substrate P2 before exposure and the substrate stage based on the temperature of the substrate stage 2 (holding unit 13) after the exposure of the first substrate P1 detected using the second detector 72. The temperature before exposure of the second substrate P2 can be controlled by using the temperature adjusting device 5 so that the temperature of 2 (holding unit 13) is substantially the same.

  The control device 9 holds the second substrate P2 carried into the exposure apparatus EX from the external device by the substrate holding member 5H of the temperature adjustment device 5, and the temperature of the second substrate P2 is the substrate after the exposure of the first substrate P1. The temperature of the second substrate P2 is adjusted so as to be substantially the same as the temperature of the stage 2 (holding unit 13). After the temperature of the second substrate P2 is adjusted, the control device 9 carries the second substrate P2 into the substrate stage 2 and exposes the second substrate P2. As in the first and second embodiments described above, the control device 9 adjusts the exposure conditions to expose the second substrate P2.

  Based on the temperature of the substrate stage 2 (holding unit 13) after the exposure of the first substrate P1, the temperature of the second substrate P2 when the substrate stage 2 (holding unit 13) is not held is adjusted, and then the second substrate P2 is held by the substrate stage 2 (holding unit 13), and the second substrate P2 is exposed to expose the second substrate P2 when the second substrate P2 is held by the substrate stage 2 (holding unit 13). Generation of deformation (distortion) can be suppressed. If the second substrate P2 is held on the substrate stage 2 (holding portion 13) in a state where the temperature of the substrate stage 2 (holding portion 13) and the temperature of the second substrate P2 are different, the substrate stage 2 (holding portion 13) will be described. ) And the second substrate P2 may deform the second substrate P2. Based on the temperature of the substrate stage 2 (holding unit 13) after the exposure of the first substrate P1, the second substrate P2 is adjusted by adjusting the temperature of the second substrate P2 when the substrate stage 2 (holding unit 13) is not held. Deformation of P2 can be suppressed.

  Note that the temperature before exposure of the third substrate P3 exposed next to the second substrate P2 can be adjusted based on the temperature of the substrate stage 2 (holding unit 13) after the exposure of the second substrate P2. Similarly, based on the temperature of the substrate stage 2 (holding unit 13) after the exposure of the third, fourth,..., (N-1) th substrate, before the fourth, fifth,. The temperature of can be adjusted.

  The substrate P in each of the above embodiments is not only a glass substrate for a display device, but also a semiconductor wafer for manufacturing a semiconductor device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, a step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the substrate P with the exposure light EL through the pattern of the mask M by moving the mask M and the substrate P synchronously. In addition, the pattern of the mask M is collectively exposed while the mask M and the substrate P are stationary, and is applied to a step-and-repeat type projection exposure apparatus (stepper) that sequentially moves the substrate P stepwise. Can do.

  The present invention also relates to a twin-stage type exposure having a plurality of substrate stages as disclosed in US Pat. No. 6,341,007, US Pat. No. 6,208,407, US Pat. No. 6,262,796, and the like. It can also be applied to devices.

  Further, the present invention relates to a substrate stage for holding a substrate as disclosed in US Pat. No. 6,897,963, European Patent Application No. 1713113, etc., and a reference mark without holding the substrate. The present invention can also be applied to an exposure apparatus that includes a formed reference member and / or a measurement stage on which various photoelectric sensors are mounted. An exposure apparatus including a plurality of substrate stages and measurement stages can be employed.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a liquid crystal display element or a display, but an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate P, a thin film magnetic head, an image sensor (CCD) In addition, the present invention can be widely applied to an exposure apparatus for manufacturing a micromachine, MEMS, DNA chip, reticle, mask, or the like.

  In each of the above-described embodiments, the position information of each stage is measured using an interferometer system including a laser interferometer. However, the present invention is not limited to this. For example, a scale (diffraction grating) provided in each stage You may use the encoder system which detects this.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in US Pat. No. 6,778,257, a variable shaped mask (also called an electronic mask, an active mask, or an image generator) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. ) May be used. Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element.

  The exposure apparatus EX of the above-described embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 16, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a substrate of the device. Manufacturing step 203, including substrate processing (exposure processing) including exposing the substrate with exposure light using a mask pattern and developing the exposed substrate (photosensitive agent) according to the above-described embodiment The substrate is manufactured through a substrate processing step 204, a device assembly step (including processing processes such as a dicing process, a bonding process, and a packaging process) 205, an inspection step 206, and the like. In step 204, the photosensitive agent is developed to form an exposure pattern layer (developed photosensitive agent layer) corresponding to the mask pattern, and the substrate is processed through the exposure pattern layer. It is.

  Note that the requirements of the above-described embodiments and modifications can be combined as appropriate. Some components may not be used. In addition, as long as it is permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above-described embodiments and modifications are incorporated herein by reference.

  DESCRIPTION OF SYMBOLS 1 ... Mask stage, 2 ... Substrate stage, 5 ... Temperature adjustment apparatus, 7 ... Detection system, 9 ... Control apparatus, 10 ... Memory | storage device, 13 ... Holding part, 30 ... Imaging characteristic adjustment apparatus, 71 ... 1st detection apparatus 72 ... second detector, 73 ... temperature sensor, EL ... exposure light, EX ... exposure device, IL ... illumination module, IR ... illumination area, IS ... illumination system, M ... mask, P ... substrate, PL ... projection optics System, PR (PR1 to PR7) ... projection area, PS ... projection system

Claims (19)

An exposure method for sequentially exposing a plurality of substrates,
Obtaining first temperature information related to a temperature before exposure of a first substrate of the plurality of substrates;
Irradiating the first substrate with exposure light to expose the first substrate;
Obtaining second temperature information relating to a temperature after exposure of the first substrate;
Adjusting the exposure conditions for the second substrate of the plurality of substrates based on the first temperature information and the second temperature information, and exposing the second substrate;
An exposure method comprising:   The exposure method according to claim 1, wherein the exposure condition is adjusted based on characteristic information including information on a size and physical properties of the substrate at a reference temperature, and the first temperature information and the second temperature information. Obtaining third temperature information relating to the temperature of the second substrate before exposure;
The exposure method according to claim 2, wherein the exposure condition is adjusted based on the characteristic information, the first temperature information, the second temperature information, and the third temperature information. Estimating an amount of expansion and contraction during exposure of the second substrate based on the first temperature information and the second temperature information;
The exposure method according to claim 1, wherein the exposure condition is adjusted based on the expansion / contraction amount. Holding the first substrate on a holding member;
Exposing the first substrate includes moving the holding member holding the first substrate to an irradiation region of the exposure light;
5. The acquisition of the first temperature information includes detecting a temperature of at least one of the first substrate and the holding member before the exposure of the first substrate. Exposure method.   The exposure method according to claim 5, wherein obtaining the second temperature information includes detecting a temperature of at least one of the first substrate and the holding member after the exposure of the first substrate. Holding the first substrate on a holding member;
Exposing the first substrate includes moving the holding member holding the first substrate to an irradiation region of the exposure light;
5. The acquisition of the second temperature information includes detecting a temperature of at least one of the first substrate and the holding member after the exposure of the first substrate. Exposure method. Holding the second substrate on the holding member;
The exposure method according to claim 6, further comprising adjusting a temperature of the second substrate that is not held by the holding member based on a temperature of the holding member after the exposure of the first substrate.   The exposure method according to any one of claims 1 to 8, wherein the adjustment of the exposure condition includes adjustment of an irradiation region of the exposure light. Exposing the second substrate includes irradiating the second substrate with the exposure light via a projection optical system;
The exposure method according to claim 1, wherein the adjustment of the exposure condition includes adjustment of a projection condition of the projection optical system.   The exposure method according to claim 10, wherein a plurality of the projection optical systems are arranged in a predetermined plane substantially parallel to the surface of the substrate. The second substrate is exposed while moving in a predetermined direction with respect to the irradiation region of the exposure light,
The exposure method according to claim 1, wherein the adjustment of the exposure condition includes an adjustment of a moving speed of the second substrate with respect to the predetermined direction. The exposure light from the mask and the projection optical system while moving the second substrate in a predetermined direction on the image plane side of the projection optical system while moving the mask in a predetermined direction on the object plane side of the projection optical system And the second substrate is exposed,
The exposure method according to claim 1, wherein the adjustment of the exposure condition includes adjustment of a speed ratio between the mask and the second substrate. Exposing the substrate using the exposure method according to claim 1;
Developing the exposed substrate;
A device manufacturing method including: An exposure apparatus that sequentially exposes a plurality of substrates,
An acquisition device capable of acquiring temperature information related to the temperature of the substrate;
The plurality of substrates based on the first temperature information related to the temperature before exposure of the first substrate and the second temperature information related to the temperature after exposure of the first substrate acquired by the acquisition device. An adjusting device for adjusting an exposure condition for the second substrate
An exposure apparatus comprising: A holding member that holds and moves the substrate in the exposure light irradiation area,
The exposure apparatus according to claim 15, wherein the acquisition apparatus acquires the first temperature information by detecting a temperature of at least one of the first substrate and the holding member before the exposure of the first substrate. A holding member that holds and moves the substrate in the exposure light irradiation area,
The exposure apparatus according to claim 15 or 16, wherein the acquisition apparatus acquires the second temperature information by detecting a temperature of at least one of the first substrate and the holding member after the exposure of the first substrate.   The exposure apparatus according to claim 17, further comprising a temperature adjustment device that adjusts a temperature of the second substrate that is not held by the holding member based on a temperature of the holding member after the exposure of the first substrate. Exposing the substrate using the exposure apparatus according to any one of claims 15 to 18,
Developing the exposed substrate;
A device manufacturing method including:

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