JPH0990415A - Liquid crystal display device and its manufacture - Google Patents

Liquid crystal display device and its manufacture

Info

Publication number
JPH0990415A
JPH0990415A JP24756695A JP24756695A JPH0990415A JP H0990415 A JPH0990415 A JP H0990415A JP 24756695 A JP24756695 A JP 24756695A JP 24756695 A JP24756695 A JP 24756695A JP H0990415 A JPH0990415 A JP H0990415A
Authority
JP
Japan
Prior art keywords
pixel electrode
protective film
liquid crystal
forming
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24756695A
Other languages
Japanese (ja)
Other versions
JP3046931B2 (en
Inventor
Yoshiko Mino
美子 美濃
Ikunori Kobayashi
郁典 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP24756695A priority Critical patent/JP3046931B2/en
Publication of JPH0990415A publication Critical patent/JPH0990415A/en
Application granted granted Critical
Publication of JP3046931B2 publication Critical patent/JP3046931B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent a cell reaction between a pixel electrode and an electrically conductive layer for supplying signal to a non-linear element at the time of forming the light shielding layer such as a black matrix of a substrate holding a liquid crystal of a liquid crystal display device, etc. SOLUTION: After a pixel electrode 6 and a TFT of a non-linear element is formed completely on an insulating transparent substrate 1, an insulated protective film 8 is formed on the whole surface of the substrate 1. Next, a pattern forming is applied by using black resist having a negative type photosensitivity to form a black matrix 9 and then respective electrodes are exposed by etching and removing the insulated protective film 8 on the pixel 6 and the mounted electrode part of extension edge parts of a source electrode 7 and a gate electrode 2 by masking the black matrix 9. Since, when the pattern of the black matrix 9 is formed, the insulated protective film 8 below the matrix 9 covers the whole surface of the substrate, the developer on the matrix 9 is not brought into contact with the pixel electrode 6, the source electrode 7 and the gate electrode 2 and therefore the cell reaction between ITO of the pixel electrode 6 and the source electrode 7 and the between the ITO and Al of the gate electrode 2 is not generated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、液晶表示装置お
よびその製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display and a method for manufacturing the same.

【0002】[0002]

【従来の技術】従来の液晶表示装置には、画素電極,非
線形素子の薄膜トランジスタおよびブラックマトリクス
等を形成したTFT基板と、このTFT基板と液晶を挟
んで対向配置され対向電極を形成した対向基板とを備え
たものがある。この従来の液晶表示装置のTFT基板の
製造方法について、図5を用いて説明する。
2. Description of the Related Art In a conventional liquid crystal display device, a TFT substrate on which pixel electrodes, thin film transistors of non-linear elements, a black matrix, etc. are formed, and an opposite substrate is formed opposite to the TFT substrate with a liquid crystal interposed therebetween to form an opposite electrode. There are some with. A method of manufacturing a TFT substrate of this conventional liquid crystal display device will be described with reference to FIG.

【0003】まず、絶縁性透明基板1上に、ゲート電極
2をパターン形成する(図5(a))。次に、ゲート絶
縁膜3,シリコン半導体層4およびチャネル保護膜5を
成膜し、ゲート電極2上のチャネル保護膜5をパターニ
ングする。次に、リンなどの不純物を含むn+ シリコン
膜(図示せず)を形成し、このn+ シリコン膜およびシ
リコン半導体層4をパターニングする(図5(b))。
First, the gate electrode 2 is patterned on the insulating transparent substrate 1 (FIG. 5A). Next, the gate insulating film 3, the silicon semiconductor layer 4, and the channel protective film 5 are formed, and the channel protective film 5 on the gate electrode 2 is patterned. Next, an n + silicon film (not shown) containing impurities such as phosphorus is formed, and the n + silicon film and the silicon semiconductor layer 4 are patterned (FIG. 5B).

【0004】次に、画素電極6としてITO透明導電膜
を成膜しパターン形成した後、ソース・ドレイン電極7
をパターン形成する。次に、絶縁保護膜8となるSiN
X 膜を成膜しパターン形成して、画素電極6が露出し、
ソース電極7およびゲート電極2の延長端部の実装電極
部が露出された構成を得る(図5(c))。最後に、遮
光層として黒色レジストのパターン形成によりブラック
マトリクス9を形成し、TFT基板が完成する(図5
(d))。
Next, after forming an ITO transparent conductive film as a pixel electrode 6 and patterning it, source / drain electrodes 7 are formed.
Is patterned. Next, SiN to be the insulating protective film 8
An X film is formed and patterned to expose the pixel electrode 6,
A configuration is obtained in which the mounting electrode portions at the extended ends of the source electrode 7 and the gate electrode 2 are exposed (FIG. 5C). Finally, a black matrix 9 is formed as a light-shielding layer by patterning a black resist to complete the TFT substrate (FIG. 5).
(D)).

【0005】[0005]

【発明が解決しようとする課題】上記従来の液晶表示装
置は、画素電極6にITO、ゲート電極2およびソース
・ドレイン電極7にAlもしくはAl化合物が用いら
れ、図5(c)に示すように、絶縁保護膜8をパターン
形成して、画素電極6と、ゲート電極2およびソース電
極7の延長端部の実装電極部(ゲート電極2の延長端部
の実装電極部は図示せず)とを露出した後、図5(d)
に示すように、ブラックマトリクス9を形成している。
ブラックマトリクス9は黒色レジストをパターン形成し
ているが、黒色レジストのような感光性着色レジストを
用い、フォトプロセスでパターン形成すると、現像液が
電解液となってITOとAl間で電池反応が生じ、透明
のITOが還元して画素電極6が着色されたり、Alの
腐食が生じるという問題があった。
In the above-mentioned conventional liquid crystal display device, ITO is used for the pixel electrode 6 and Al or Al compound is used for the gate electrode 2 and the source / drain electrodes 7, and as shown in FIG. The insulating protective film 8 is patterned to form the pixel electrode 6 and the mounting electrode portion at the extended end portion of the gate electrode 2 and the source electrode 7 (the mounting electrode portion at the extended end portion of the gate electrode 2 is not shown). After exposure, FIG. 5 (d)
The black matrix 9 is formed as shown in FIG.
The black matrix 9 is formed by patterning a black resist, but when a photosensitive colored resist such as a black resist is used and patterning is performed by a photo process, a developing solution becomes an electrolytic solution to cause a cell reaction between ITO and Al. However, there is a problem that the transparent ITO is reduced and the pixel electrode 6 is colored, and Al is corroded.

【0006】また、ネガ型の感光基を有する黒色レジス
トでは、ブラックマトリクス9のパターン加工におい
て、厚膜の黒色レジストに光が進入し難く、膜中に均一
な光架橋が得られないことから、現像後のブラックマト
リクス9のパターン形状が所望の形状でなくなるという
問題があった。この発明の第1の目的は、ブラックマト
リクス等の遮光層の形成時における画素電極と非線形素
子に信号を供給する導電体層との電池反応を防止できる
液晶表示装置およびその製造方法を提供することであ
る。
Further, in the case of a black resist having a negative type photosensitive group, it is difficult for light to enter the thick black resist in the pattern processing of the black matrix 9, and uniform photocrosslinking cannot be obtained in the film. There is a problem that the pattern shape of the black matrix 9 after development is not a desired shape. A first object of the present invention is to provide a liquid crystal display device capable of preventing a battery reaction between a pixel electrode and a conductor layer supplying a signal to a non-linear element when a light shielding layer such as a black matrix is formed, and a manufacturing method thereof. Is.

【0007】この発明の第2の目的は、ブラックマトリ
クス等の遮光層の形成時における画素電極と非線形素子
に信号を供給する導電体層との電池反応を防止できると
ともに、ブラックマトリクス等の遮光層を所望の形状に
形成できる液晶表示装置の製造方法を提供することであ
る。
A second object of the present invention is to prevent a battery reaction between a pixel electrode and a conductor layer for supplying a signal to a non-linear element when a light-shielding layer such as a black matrix is formed, and also to prevent light-shielding layer such as a black matrix. It is to provide a method for manufacturing a liquid crystal display device capable of forming a desired shape.

【0008】[0008]

【課題を解決するための手段】請求項1記載の液晶表示
装置は、液晶層を挟持した2つの基板のうち一方の基板
が、絶縁性基板上に画素電極,非線形素子およびこの非
線形素子に信号を供給する導電体層を形成し、画素電極
および導電体層の実装部分を除く領域を覆うように絶縁
保護膜を形成し、絶縁保護膜上の全面に遮光層を形成し
たことを特徴とする。したがって、絶縁保護膜と遮光層
とは略同一形状であり、遮光層形成後に、遮光層をマス
クとして基板全面に形成した絶縁保護膜をエッチングし
て画素電極および導電体層の実装部分を露出させること
ができ、遮光層のパターン形成時には絶縁保護膜が画素
電極および導電体層を覆っているため、画素電極と導電
体層との電池反応を防止できる。
A liquid crystal display device according to claim 1, wherein one of the two substrates sandwiching a liquid crystal layer has a pixel electrode, a non-linear element and a signal for the non-linear element on an insulating substrate. Is formed, an insulating protective film is formed so as to cover a region other than the mounting portion of the pixel electrode and the conductive layer, and a light shielding layer is formed on the entire surface of the insulating protective film. . Therefore, the insulating protective film and the light shielding layer have substantially the same shape, and after forming the light shielding layer, the insulating protective film formed on the entire surface of the substrate is etched by using the light shielding layer as a mask to expose the mounting portions of the pixel electrode and the conductor layer. Since the insulating protective film covers the pixel electrode and the conductor layer when forming the pattern of the light shielding layer, it is possible to prevent a battery reaction between the pixel electrode and the conductor layer.

【0009】請求項2記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法が、絶縁性基板上に画素電極,非線形素子および
この非線形素子に信号を供給する導電体層を形成した
後、画素電極,非線形素子および導電体層を覆うように
絶縁保護膜を形成する工程と、画素電極および導電体層
の実装部分を除く領域の絶縁保護膜上に遮光層を形成す
る工程と、遮光層をマスクとして絶縁保護膜をエッチン
グして画素電極および導電体層の実装部分を露出させる
工程とを含むことを特徴とする。このように、画素電
極,非線形素子および導電体層を覆う絶縁保護膜上に遮
光層を形成した後、遮光層をマスクとして絶縁保護膜を
エッチングして画素電極および導電体層の実装部分を露
出させることにより、遮光層のパターン形成時には絶縁
保護膜が画素電極および導電体層を覆っているため、画
素電極と導電体層との電池反応を防止できる。
In a method of manufacturing a liquid crystal display device according to a second aspect, one of the two substrates sandwiching the liquid crystal layer is formed so that a pixel electrode, a non-linear element, and a signal to the non-linear element are provided on an insulating substrate. Forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductive layer after forming the conductive layer for supplying the liquid, and the insulating protective film in the region excluding the mounting portion of the pixel electrode and the conductive layer. And a step of forming a light-shielding layer on the substrate and etching the insulating protective film using the light-shielding layer as a mask to expose the mounting portions of the pixel electrode and the conductor layer. Thus, after forming the light shielding layer on the insulating protective film covering the pixel electrode, the non-linear element and the conductor layer, the insulating protective film is etched by using the light shielding layer as a mask to expose the mounting portion of the pixel electrode and the conductor layer. By doing so, since the insulating protective film covers the pixel electrode and the conductor layer at the time of forming the pattern of the light shielding layer, it is possible to prevent a battery reaction between the pixel electrode and the conductor layer.

【0010】請求項3記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法が、絶縁性基板上に画素電極,非線形素子および
この非線形素子に信号を供給する導電体層を形成した
後、画素電極,非線形素子および導電体層を覆うように
絶縁保護膜を形成する工程と、画素電極および導電体層
の実装部分を除く領域の絶縁保護膜上に透明のレジスト
を形成する工程と、透明のレジストを着色して遮光層と
する工程と、遮光層をマスクとして絶縁保護膜をエッチ
ングして画素電極および導電体層の実装部分を露出させ
る工程とを含むことを特徴とする。このように、画素電
極,非線形素子および導電体層を覆う絶縁保護膜上に透
明のレジストを着色して遮光層を形成した後、遮光層を
マスクとして絶縁保護膜をエッチングして画素電極およ
び導電体層の実装部分を露出させることにより、遮光層
となる透明のレジストのパターン形成時には絶縁保護膜
が画素電極および導電体層を覆っているため、画素電極
と導電体層との電池反応を防止できる。また、遮光層
は、パターン形成時には、透明のレジストであるため、
厚膜のレジストでも光が進入し易く、所望のパターン形
状を得ることができる。
In the method of manufacturing a liquid crystal display device according to a third aspect of the present invention, the method of forming one of the two substrates sandwiching the liquid crystal layer is such that the pixel electrode, the non-linear element and the non-linear element are signaled on the insulating substrate. Forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductive layer after forming the conductive layer for supplying the liquid, and the insulating protective film in the region excluding the mounting portion of the pixel electrode and the conductive layer. A step of forming a transparent resist on the substrate, a step of coloring the transparent resist to form a light-shielding layer, and a step of etching the insulating protective film using the light-shielding layer as a mask to expose the mounting portion of the pixel electrode and the conductor layer. It is characterized by including. As described above, after the transparent resist is colored on the insulating protective film covering the pixel electrode, the non-linear element and the conductor layer to form the light shielding layer, the insulating protective film is etched by using the light shielding layer as a mask to etch the pixel electrode and the conductive layer. By exposing the mounting part of the body layer, the insulating protective film covers the pixel electrode and the conductor layer during pattern formation of the transparent resist that serves as the light-shielding layer, preventing the battery reaction between the pixel electrode and the conductor layer. it can. Further, the light-shielding layer is a transparent resist at the time of pattern formation,
Light can easily enter even a thick-film resist, and a desired pattern shape can be obtained.

【0011】請求項4記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法が、絶縁性基板上に画素電極,非線形素子および
この非線形素子に信号を供給する導電体層を形成した
後、画素電極,非線形素子および導電体層を覆うように
絶縁保護膜を形成する工程と、画素電極および導電体層
の実装部分を除く領域の絶縁保護膜上に透明のレジスト
を形成する工程と、透明のレジストをマスクとして絶縁
保護膜をエッチングして画素電極および導電体層の実装
部分を露出させる工程と、透明のレジストを着色して遮
光層とする工程とを含むことを特徴とする。このよう
に、画素電極,非線形素子および導電体層を覆う絶縁保
護膜上に着色して遮光層となる透明のレジストを形成し
た後、透明のレジストをマスクとして絶縁保護膜をエッ
チングして画素電極および導電体層の実装部分を露出さ
せることにより、遮光層となる透明のレジストのパター
ン形成時には絶縁保護膜が画素電極および導電体層を覆
っているため、画素電極と導電体層との電池反応を防止
できる。また、遮光層は、パターン形成時には、透明の
レジストであるため、厚膜のレジストでも光が進入し易
く、所望のパターン形状を得ることができる。
According to a fourth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, wherein one of the two substrates sandwiching a liquid crystal layer is formed so that a pixel electrode, a non-linear element and a signal to the non-linear element are formed on an insulating substrate. Forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductive layer after forming the conductive layer for supplying the liquid, and the insulating protective film in the region excluding the mounting portion of the pixel electrode and the conductive layer. To form a transparent resist, a step of etching the insulating protective film by using the transparent resist as a mask to expose the mounting portion of the pixel electrode and the conductor layer, and a step of coloring the transparent resist to form a light-shielding layer It is characterized by including and. In this way, after forming a transparent resist that is colored and becomes a light-shielding layer on the insulating protective film that covers the pixel electrode, the non-linear element and the conductor layer, the transparent protective film is used as a mask to etch the insulating protective film to form the pixel electrode. By exposing the mounting portion of the conductor layer and the conductor layer, the insulating protective film covers the pixel electrode and the conductor layer during pattern formation of the transparent resist that becomes the light-shielding layer, so that the battery reaction between the pixel electrode and the conductor layer occurs. Can be prevented. Further, since the light-shielding layer is a transparent resist at the time of pattern formation, light can easily enter even a thick-film resist and a desired pattern shape can be obtained.

【0012】請求項5記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法が、絶縁性基板上に画素電極,非線形素子および
この非線形素子に信号を供給する導電体層を形成した
後、画素電極,非線形素子および導電体層を覆うように
絶縁保護膜を形成する工程と、画素電極および導電体層
の実装部分を除く領域の絶縁保護膜上に透明導電膜を形
成する工程と、透明導電膜に電着塗料を凝固析出させて
遮光層とする工程と、遮光層をマスクとして絶縁保護膜
をエッチングして画素電極および導電体層の実装部分を
露出させる工程とを含むことを特徴とする。このよう
に、画素電極,非線形素子および導電体層を覆う絶縁保
護膜上に透明導電膜を電着法により遮光層とした後、遮
光層をマスクとして絶縁保護膜をエッチングして画素電
極および導電体層の実装部分を露出させることにより、
遮光層となる透明導電膜のパターン形成時には絶縁保護
膜が画素電極および導電体層を覆っているため、画素電
極と導電体層との電池反応を防止できる。また、透明導
電膜を用いているため、薄膜の遮光層が得られる。
According to a fifth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, wherein one of the two substrates sandwiching a liquid crystal layer is formed so that a pixel electrode, a non-linear element and a signal to the non-linear element are provided on an insulating substrate. Forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductive layer after forming the conductive layer for supplying the liquid, and the insulating protective film in the region excluding the mounting portion of the pixel electrode and the conductive layer. A step of forming a transparent conductive film on the transparent conductive film, a step of coagulating and depositing an electrodeposition coating on the transparent conductive film to form a light shielding layer, and a step of etching the insulating protective film using the light shielding layer as a mask to mount the pixel electrode and the conductor layer. And exposing it. As described above, after the transparent conductive film is formed as a light shielding layer on the insulating protective film covering the pixel electrode, the non-linear element and the conductor layer by the electrodeposition method, the insulating protective film is etched by using the light shielding layer as a mask to etch the pixel electrode and the conductive layer. By exposing the mounting part of the body layer,
Since the insulating protective film covers the pixel electrode and the conductor layer at the time of forming the pattern of the transparent conductive film serving as the light-shielding layer, the battery reaction between the pixel electrode and the conductor layer can be prevented. Further, since the transparent conductive film is used, a thin light-shielding layer can be obtained.

【0013】請求項6記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法が、絶縁性基板上に画素電極,非線形素子および
この非線形素子に信号を供給する導電体層を形成した
後、画素電極,非線形素子および導電体層を覆うように
絶縁保護膜を形成する工程と、画素電極および導電体層
の実装部分を除く領域の絶縁保護膜上に透明導電膜を形
成する工程と、透明導電膜をマスクとして絶縁保護膜を
エッチングして画素電極および導電体層の実装部分を露
出させる工程と、透明導電膜に電着塗料を凝固析出させ
て遮光層とする工程とを含むことを特徴とする。このよ
うに、画素電極,非線形素子および導電体層を覆う絶縁
保護膜上に透明導電膜をパターン形成し、この透明導電
膜をマスクとして絶縁保護膜をエッチングして画素電極
および導電体層の実装部分を露出させた後、透明導電膜
を電着法により遮光層とすることにより、遮光層となる
透明導電膜のパターン形成時には絶縁保護膜が画素電極
および導電体層を覆っているため、画素電極と導電体層
との電池反応を防止できる。また、透明導電膜を用いて
いるため、薄膜の遮光層が得られる。
According to a sixth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, wherein one of the two substrates sandwiching a liquid crystal layer is formed so that a pixel electrode, a non-linear element and a signal to the non-linear element are formed on an insulating substrate. Forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductive layer after forming the conductive layer for supplying the liquid, and the insulating protective film in the region excluding the mounting portion of the pixel electrode and the conductive layer. A step of forming a transparent conductive film on the transparent conductive film, a step of etching the insulating protective film using the transparent conductive film as a mask to expose the mounting portion of the pixel electrode and the conductive layer, and solidifying and depositing an electrodeposition coating on the transparent conductive film. And a step of forming a light shielding layer. In this way, the transparent conductive film is patterned on the insulating protective film covering the pixel electrode, the non-linear element and the conductor layer, and the insulating protective film is etched by using the transparent conductive film as a mask to mount the pixel electrode and the conductive layer. After exposing the portion, the transparent conductive film is formed into a light-shielding layer by an electrodeposition method, so that the insulating protective film covers the pixel electrode and the conductor layer during pattern formation of the transparent conductive film to be the light-shielding layer. The battery reaction between the electrode and the conductor layer can be prevented. Further, since the transparent conductive film is used, a thin light-shielding layer can be obtained.

【0014】[0014]

【発明の実施の形態】以下、この発明の実施の形態につ
いて図面を参照しながら説明する。 〔第1の実施の形態〕まず、この発明の第1の実施の形
態について、図1を参照しながら説明する。図1はこの
発明の第1の実施の形態の液晶表示装置におけるTFT
基板の製造方法を示す工程順断面図である。
Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] First, a first embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a TFT in a liquid crystal display device according to a first embodiment of the present invention.
FIG. 6 is a cross-sectional view in order of the steps, showing a method for manufacturing a substrate.

【0015】従来例同様に、絶縁性透明基板1上に、ゲ
ート電極2,ゲート絶縁膜3,シリコン半導体層4,チ
ャネル保護膜5,n+ シリコン膜(図示せず),画素電
極6,ソース・ドレイン電極7を順次形成して、画素電
極6および非線形素子のTFTを完成した後、絶縁保護
膜8として例えばSiNX 膜を基板全面に製膜する(図
1(a))。
Similar to the conventional example, on the insulating transparent substrate 1, the gate electrode 2, the gate insulating film 3, the silicon semiconductor layer 4, the channel protective film 5, the n + silicon film (not shown), the pixel electrode 6 and the source are formed. After the drain electrode 7 is sequentially formed to complete the pixel electrode 6 and the TFT of the non-linear element, an insulating protective film 8 such as a SiN x film is formed on the entire surface of the substrate (FIG. 1A).

【0016】次に、ネガ型の感光性を有する黒色レジス
トを用いてパターン形成を施しブラックマトリクス(遮
光層)9を形成する(図1(b))。次に、ブラックマ
トリクス9をマスクとして、画素電極6上やソース電極
7およびゲート電極2の延長端部の実装電極部上の絶縁
保護膜8をSF系ガスでドライエッチングにて除去し、
各電極を露出させる(図1(c))。このようにして絶
縁保護膜8上の全面にブラックマトリクス9が形成さ
れ、絶縁保護膜8とブラックマトリクス9とがほぼ同一
形状となったTFT基板が完成する。
Next, pattern formation is performed using a negative type black resist having photosensitivity to form a black matrix (light-shielding layer) 9 (FIG. 1B). Next, using the black matrix 9 as a mask, the insulating protective film 8 on the pixel electrodes 6 and on the mounting electrode portions of the extended ends of the source electrodes 7 and the gate electrodes 2 is removed by dry etching with SF type gas,
Each electrode is exposed (FIG. 1 (c)). In this way, the black matrix 9 is formed on the entire surface of the insulating protective film 8, and the TFT substrate in which the insulating protective film 8 and the black matrix 9 have substantially the same shape is completed.

【0017】この第1の実施の形態によれば、ブラック
マトリクス9のパターン形成時には、その下の絶縁保護
膜8が基板全面を覆っているため、ブラックマトリクス
9の現像液が画素電極6やソース電極7およびゲート電
極2と接触せず、画素電極6のITOとソース電極7お
よびゲート電極2のAl等との電池反応は起きない。し
たがって、透明なITOの還元による画素電極6の黒化
や、ソース電極7およびゲート電極2のAlの腐食を防
止できる。また、ブラックマトリクス9を絶縁保護膜8
のエッチングマスクとすることにより、工程の削減が可
能になる。
According to the first embodiment, since the insulating protective film 8 under the black matrix 9 covers the entire surface of the substrate when the pattern of the black matrix 9 is formed, the developing solution of the black matrix 9 is applied to the pixel electrode 6 and the source. The electrode 7 and the gate electrode 2 do not come into contact with each other, and the battery reaction between the ITO of the pixel electrode 6 and the source electrode 7 and the Al of the gate electrode 2 does not occur. Therefore, blackening of the pixel electrode 6 due to reduction of the transparent ITO and corrosion of Al of the source electrode 7 and the gate electrode 2 can be prevented. In addition, the black matrix 9 is replaced with the insulating protective film 8
By using this etching mask, the number of steps can be reduced.

【0018】なお、この第1の実施の形態では、ブラッ
クマトリクス9に有機レジスト膜を用いているが、遮光
性の高い無機膜を用いてもよい。この場合においても、
ブラックマトリクス9の形成時に絶縁保護膜8が基板全
面を覆っているため、画素電極6のITOや、ゲート電
極2およびソース電極7の配線材のAlが、無機膜のエ
ッチング液中で曝されることを防ぐことができる。
Although the organic resist film is used for the black matrix 9 in the first embodiment, an inorganic film having a high light shielding property may be used. Even in this case,
Since the insulating protective film 8 covers the entire surface of the substrate when the black matrix 9 is formed, the ITO of the pixel electrode 6 and the Al of the wiring material of the gate electrode 2 and the source electrode 7 are exposed in the etchant for the inorganic film. Can be prevented.

【0019】〔第2の実施の形態〕つぎに、この発明の
第2の実施の形態について、図2を参照しながら説明す
る。図2はこの発明の第2の実施の形態の液晶表示装置
におけるTFT基板の製造方法を示す工程順断面図であ
る。第1の実施の形態と同様に、画素電極6およびTF
Tを完成した後、基板全面に絶縁保護膜8を製膜する。
その後、ブラックマトリクス(遮光層)9Aの材料とし
て例えばカゼインやゼラチンなどのネガ型の感光性を有
する無色透明のレジスト9aを用いてパターン形成を施
す(図2(a))。
[Second Embodiment] Next, a second embodiment of the present invention will be described with reference to FIG. 2A to 2D are sectional views in order of the steps, showing a method for manufacturing a TFT substrate in a liquid crystal display device according to a second embodiment of the present invention. Similar to the first embodiment, the pixel electrode 6 and the TF
After completing T, an insulating protective film 8 is formed on the entire surface of the substrate.
After that, pattern formation is performed using a negative and transparent colorless and transparent resist 9a such as casein or gelatin as a material of the black matrix (light-shielding layer) 9A (FIG. 2A).

【0020】次に、無色透明のレジスト9aを染色法に
より黒色に着色してブラックマトリクス9Aを形成する
(図2(b))。この際、黒色になれば単色染めでも多
色重ね染めでも良い。次に、ブラックマトリクス9Aを
マスクとして、画素電極6上やソース電極7およびゲー
ト電極2の延長端部の実装電極部上の絶縁保護膜8を、
第1の実施の形態同様にエッチング除去し、各電極を露
出させることで、絶縁保護膜8とブラックマトリクス9
Aとがほぼ同一形状となったTFT基板が完成する(図
2(c))。
Next, the colorless and transparent resist 9a is colored black by a dyeing method to form a black matrix 9A (FIG. 2 (b)). At this time, as long as it becomes black, either single-color dyeing or multi-color dyeing may be used. Next, using the black matrix 9A as a mask, the insulating protective film 8 on the pixel electrode 6 and on the mounting electrode portion at the extended end of the source electrode 7 and the gate electrode 2 is
As in the first embodiment, the insulating protection film 8 and the black matrix 9 are removed by etching and exposing each electrode.
A TFT substrate having substantially the same shape as A is completed (FIG. 2 (c)).

【0021】この第2の実施の形態においても、着色し
てブラックマトリクス9Aとなる無色透明のレジスト9
aのパターン形成時には、その下の絶縁保護膜8が基板
全面を覆っているため、第1の実施の形態と同様の効果
が得られ、また、ブラックマトリクス9Aを絶縁保護膜
8のエッチングマスクとすることによる工程の削減も同
様である。
Also in the second embodiment, the colorless and transparent resist 9 which becomes the black matrix 9A by being colored.
When the pattern a is formed, the insulating protection film 8 thereunder covers the entire surface of the substrate, so that the same effect as that of the first embodiment can be obtained, and the black matrix 9A serves as an etching mask for the insulating protection film 8. The same applies to the reduction of the process.

【0022】さらに、無色透明のレジスト9aを用いて
いるため、厚膜のレジスト9aでも光が進入し易く、所
望のパターン形状のブラックマトリクス9Aを得ること
ができる。 〔第3の実施の形態〕つぎに、この発明の第3の実施の
形態について、図3を参照しながら説明する。図3はこ
の発明の第3の実施の形態の液晶表示装置におけるTF
T基板の製造方法を示す工程順断面図である。
Further, since the colorless and transparent resist 9a is used, light can easily enter even the thick resist 9a, and the black matrix 9A having a desired pattern can be obtained. [Third Embodiment] Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 3 shows the TF in the liquid crystal display device according to the third embodiment of the present invention.
FIG. 6 is a cross-sectional view in order of the steps, showing a method for manufacturing a T substrate.

【0023】第2の実施の形態と同様に、画素電極6お
よびTFTを完成した後、基板全面に絶縁保護膜8を製
膜し、その後、ブラックマトリクス9Aの材料として例
えばカゼインやゼラチンなどのネガ型の感光性を有する
無色透明のレジスト9aを用いてパターン形成を施す
(図3(a))。次に、無色透明のレジスト9aをマス
クとして、画素電極6上やソース電極7およびゲート電
極2の延長端部の実装電極部上の絶縁保護膜8をエッチ
ング除去して各電極を露出させる(図3(b))。この
とき、絶縁保護膜8と無色透明のレジスト9aとがほぼ
同一形状となる。
Similar to the second embodiment, after the pixel electrode 6 and the TFT are completed, an insulating protective film 8 is formed on the entire surface of the substrate, and then a negative material such as casein or gelatin is used as a material for the black matrix 9A. Pattern formation is performed using a colorless and transparent resist 9a having mold sensitivity (FIG. 3A). Next, using the colorless and transparent resist 9a as a mask, the insulating protective film 8 on the pixel electrode 6 and the mounting electrode portion at the extended end portion of the source electrode 7 and the gate electrode 2 is removed by etching to expose each electrode (FIG. 3 (b)). At this time, the insulating protective film 8 and the colorless and transparent resist 9a have substantially the same shape.

【0024】その後、無色透明のレジスト9aを、第2
の実施の形態同様、染色法により黒色に着色することで
ブラックマトリクス9Aを形成して、TFT基板が完成
する(図3(c))。この第3の実施の形態によれば、
第2の実施の形態と同様の効果が得られる。 〔第4の実施の形態〕つぎに、この発明の第4の実施の
形態について、図4を参照しながら説明する。図4はこ
の発明の第4の実施の形態の液晶表示装置におけるTF
T基板の製造方法を示す工程順断面図である。
After that, a colorless and transparent resist 9a is formed on the second resist.
Similar to the above embodiment, the black matrix 9A is formed by coloring in black by the dyeing method to complete the TFT substrate (FIG. 3C). According to the third embodiment,
The same effect as the second embodiment can be obtained. [Fourth Embodiment] Next, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 4 shows the TF in the liquid crystal display device according to the fourth embodiment of the present invention.
FIG. 6 is a cross-sectional view in order of the steps, showing a method for manufacturing a T substrate.

【0025】第1の実施の形態と同様に、画素電極6お
よびTFTを完成した後、基板全面に絶縁保護膜8を製
膜する。その後、ブラックマトリクス(遮光層)9Bの
材料として、まずITOからなる透明導電膜9bをマト
リクス状にパターン形成する(図4(a))。次に、透
明導電膜9bに所定の分光特性を有する電着塗料を凝固
析出させて着色したブラックマトリクス9Bを形成する
(図4(b))。具体的には、黒色顔料と高分子樹脂を
有する電着塗料を入れた電着槽にTFTアレイを浸漬
し、透明導電膜9bに陽極を印加することで、透明導電
膜9b上に黒色樹脂粒子を析出させて反射防止膜を設け
る。その後、析出した反射防止膜を乾燥により熱架橋さ
せ、焼成・非導電化させてブラックマトリクス9Bとす
るものである。
Similar to the first embodiment, after the pixel electrode 6 and the TFT are completed, the insulating protective film 8 is formed on the entire surface of the substrate. Then, as a material for the black matrix (light-shielding layer) 9B, first, a transparent conductive film 9b made of ITO is patterned in a matrix (FIG. 4A). Next, an electrodeposition coating material having a predetermined spectral characteristic is coagulated and deposited on the transparent conductive film 9b to form a colored black matrix 9B (FIG. 4B). Specifically, by immersing the TFT array in an electrodeposition tank containing an electrodeposition coating material having a black pigment and a polymer resin and applying an anode to the transparent conductive film 9b, black resin particles are formed on the transparent conductive film 9b. Is deposited to provide an antireflection film. After that, the deposited antireflection film is thermally crosslinked by drying, baked and made non-conductive to form the black matrix 9B.

【0026】次に、ブラックマトリクス9Bをマスクと
して、画素電極6上やソース電極7およびゲート電極2
の延長端部の実装電極部上の絶縁保護膜8を、第1の実
施の形態同様にエッチング除去し、各電極を露出させる
ことで、絶縁保護膜8とブラックマトリクス9Bとがほ
ぼ同一形状となったTFT基板が完成する(図4
(c))。
Next, using the black matrix 9B as a mask, the pixel electrode 6 and the source electrode 7 and the gate electrode 2 are formed.
The insulating protection film 8 on the mounting electrode portion at the extended end of is removed by etching as in the first embodiment to expose each electrode, so that the insulating protection film 8 and the black matrix 9B have substantially the same shape. The completed TFT substrate is completed (Fig. 4
(C)).

【0027】この第4の実施の形態によれば、ブラック
マトリクス9Bとなる透明導電膜9bのパターン形成時
には、その下の絶縁保護膜8が基板全面を覆っているた
め、第1の実施の形態と同様の効果が得られ、また、ブ
ラックマトリクス9Bを絶縁保護膜8のエッチングマス
クとすることによる工程の削減も同様である。また、透
明導電膜9bを用いているため、薄膜のブラックマトリ
クス9Bを得ることができる。なお、透明導電膜9bは
ITOに限らず有機導電膜でもよい。
According to the fourth embodiment, when the transparent conductive film 9b to be the black matrix 9B is patterned, the insulating protection film 8 thereunder covers the entire surface of the substrate, so that the first embodiment is described. The same effect can be obtained, and the number of steps can be reduced by using the black matrix 9B as an etching mask for the insulating protective film 8. Further, since the transparent conductive film 9b is used, the thin black matrix 9B can be obtained. The transparent conductive film 9b is not limited to ITO and may be an organic conductive film.

【0028】なお、第4の実施の形態では、透明導電膜
9bを着色した後、絶縁保護膜8をエッチングして各電
極を露出させたが、着色していない透明導電膜9bをマ
スクとして絶縁保護膜8をエッチングし各電極を露出さ
せた後、透明導電膜9bを着色しても同様の効果が得ら
れる。この場合、ソースとゲートがショートしない工夫
をしておけばよい。
In the fourth embodiment, after the transparent conductive film 9b is colored, the insulating protective film 8 is etched to expose each electrode, but the transparent conductive film 9b which is not colored is used as a mask for insulation. Even if the transparent conductive film 9b is colored after the protective film 8 is etched to expose each electrode, the same effect can be obtained. In this case, it is sufficient to take measures to prevent the source and the gate from being short-circuited.

【0029】なお、上記の実施の形態では、遮光層パタ
ーンとしてブラックマトリクス9,9A,9Bを明示し
たが、その限りでなく、ブラックストライプでもよい。
また、上記の実施の形態では、画素電極6にITOを、
ソース電極7およびゲート電極2の配線金属材にAlも
しくはAl化合物を用いた電池反応について述べている
が、画素電極材や配線金属材との間での電池反応はIT
OやAlに限らない。したがって、他の金属間でも生じ
得ることは言うまでもなく、この発明の電池反応抑制効
果は有効である。
In the above embodiment, the black matrix 9, 9A, 9B is clearly shown as the light shielding layer pattern, but the pattern is not limited to this and may be a black stripe.
In addition, in the above-described embodiment, ITO is used for the pixel electrode 6,
Although the battery reaction using Al or an Al compound as the wiring metal material of the source electrode 7 and the gate electrode 2 is described, the battery reaction between the pixel electrode material and the wiring metal material is IT.
It is not limited to O and Al. Therefore, needless to say, it can occur between other metals, and the battery reaction suppressing effect of the present invention is effective.

【0030】さらに、上記の実施の形態において、非線
形素子としてTFTを用いた場合について詳細な説明を
したが、この発明はMIMやダイオード等の非線形素子
を用いた液晶表示装置にも有効である。
Further, in the above embodiment, the case where the TFT is used as the non-linear element has been described in detail, but the present invention is also effective for the liquid crystal display device using the non-linear element such as MIM or diode.

【0031】[0031]

【発明の効果】請求項1記載の液晶表示装置は、液晶層
を挟持した2つの基板のうち一方の基板の絶縁保護膜上
の全面に遮光層を形成したことにより、絶縁保護膜と遮
光層とは略同一形状であり、遮光層形成後に、遮光層を
マスクとして基板全面に形成した絶縁保護膜をエッチン
グして画素電極および導電体層の実装部分を露出させる
ことができ、遮光層のパターン形成時には絶縁保護膜が
画素電極および導電体層を覆っているため、画素電極と
導電体層との電池反応を防止できる。
According to the liquid crystal display device of the present invention, the light-shielding layer is formed on the entire surface of the insulating protection film of one of the two substrates sandwiching the liquid crystal layer. Has a substantially same shape, and after the light-shielding layer is formed, the insulating protection film formed on the entire surface of the substrate can be etched using the light-shielding layer as a mask to expose the mounting portion of the pixel electrode and the conductor layer. Since the insulating protective film covers the pixel electrode and the conductor layer during formation, it is possible to prevent a battery reaction between the pixel electrode and the conductor layer.

【0032】請求項2記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法を、画素電極,非線形素子および導電体層を覆う
絶縁保護膜上に遮光層を形成した後、遮光層をマスクと
して絶縁保護膜をエッチングして画素電極および導電体
層の実装部分を露出させることにより、遮光層のパター
ン形成時には絶縁保護膜が画素電極および導電体層を覆
っているため、画素電極と導電体層との電池反応を防止
できる。
According to a second aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, wherein one of two substrates sandwiching a liquid crystal layer is formed on an insulating protective film covering a pixel electrode, a non-linear element and a conductor layer. After the light-shielding layer is formed, the insulating protection film is etched using the light-shielding layer as a mask to expose the mounting portion of the pixel electrode and the conductor layer. Since it covers, the battery reaction between the pixel electrode and the conductor layer can be prevented.

【0033】請求項3記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法を、画素電極,非線形素子および導電体層を覆う
絶縁保護膜上に透明のレジストを着色して遮光層を形成
した後、遮光層をマスクとして絶縁保護膜をエッチング
して画素電極および導電体層の実装部分を露出させるこ
とにより、遮光層となる透明のレジストのパターン形成
時には絶縁保護膜が画素電極および導電体層を覆ってい
るため、画素電極と導電体層との電池反応を防止でき
る。また、遮光層は、パターン形成時には、透明のレジ
ストであるため、厚膜のレジストでも光が進入し易く、
所望のパターン形状を得ることができる。
According to a third aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, wherein one of the two substrates sandwiching the liquid crystal layer is formed on the insulating protective film covering the pixel electrode, the non-linear element and the conductor layer. After the transparent resist is colored to form the light-shielding layer, the insulating protective film is etched using the light-shielding layer as a mask to expose the mounting portion of the pixel electrode and the conductor layer, thereby forming a transparent resist pattern that becomes the light-shielding layer. Since the insulating protective film covers the pixel electrode and the conductor layer during formation, it is possible to prevent a battery reaction between the pixel electrode and the conductor layer. Further, since the light-shielding layer is a transparent resist at the time of pattern formation, light can easily enter even a thick-film resist,
A desired pattern shape can be obtained.

【0034】請求項4記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法を、画素電極,非線形素子および導電体層を覆う
絶縁保護膜上に着色して遮光層となる透明のレジストを
形成した後、透明のレジストをマスクとして絶縁保護膜
をエッチングして画素電極および導電体層の実装部分を
露出させることにより、遮光層となる透明のレジストの
パターン形成時には絶縁保護膜が画素電極および導電体
層を覆っているため、画素電極と導電体層との電池反応
を防止できる。また、遮光層は、パターン形成時には、
透明のレジストであるため、厚膜のレジストでも光が進
入し易く、所望のパターン形状を得ることができる。
According to a fourth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method of forming one of two substrates sandwiching a liquid crystal layer is performed on an insulating protective film covering a pixel electrode, a non-linear element and a conductor layer. After forming a transparent resist that becomes a light-shielding layer by coloring, the transparent protective film becomes a light-shielding layer by etching the insulating protective film using the transparent resist as a mask to expose the mounting portion of the pixel electrode and the conductor layer. Since the insulating protective film covers the pixel electrode and the conductor layer during the pattern formation, the battery reaction between the pixel electrode and the conductor layer can be prevented. Further, the light shielding layer is
Since it is a transparent resist, light can easily enter even with a thick film resist, and a desired pattern shape can be obtained.

【0035】請求項5記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法を、画素電極,非線形素子および導電体層を覆う
絶縁保護膜上に透明導電膜を電着法により遮光層とした
後、遮光層をマスクとして絶縁保護膜をエッチングして
画素電極および導電体層の実装部分を露出させることに
より、遮光層となる透明導電膜のパターン形成時には絶
縁保護膜が画素電極および導電体層を覆っているため、
画素電極と導電体層との電池反応を防止できる。また、
透明導電膜を用いているため、薄膜の遮光層を得ること
ができる。
According to a fifth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, wherein one of the two substrates sandwiching a liquid crystal layer is formed on an insulating protective film covering a pixel electrode, a non-linear element and a conductor layer. After the transparent conductive film is formed into a light-shielding layer by an electrodeposition method, the insulating protective film is etched using the light-shielding layer as a mask to expose the mounting portions of the pixel electrode and the conductor layer, thereby forming a pattern of the transparent conductive film to be the light-shielding layer. Since the insulating protective film covers the pixel electrode and the conductor layer during formation,
A battery reaction between the pixel electrode and the conductor layer can be prevented. Also,
Since the transparent conductive film is used, a thin light shielding layer can be obtained.

【0036】請求項6記載の液晶表示装置の製造方法
は、液晶層を挟持した2つの基板のうち一方の基板の形
成方法を、画素電極,非線形素子および導電体層を覆う
絶縁保護膜上に透明導電膜をパターン形成し、この透明
導電膜をマスクとして絶縁保護膜をエッチングして画素
電極および導電体層の実装部分を露出させた後、電着法
により遮光層とすることにより、遮光層となる透明導電
膜のパターン形成時には絶縁保護膜が画素電極および導
電体層を覆っているため、画素電極と導電体層との電池
反応を防止できる。また、透明導電膜を用いているた
め、薄膜の遮光層を得ることができる。
According to a sixth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method of forming one of two substrates sandwiching a liquid crystal layer is performed on an insulating protective film covering a pixel electrode, a non-linear element and a conductor layer. The transparent conductive film is formed into a pattern, the insulating protective film is etched using the transparent conductive film as a mask to expose the mounting portions of the pixel electrode and the conductor layer, and then the light shielding layer is formed by the electrodeposition method. Since the insulating protective film covers the pixel electrode and the conductor layer at the time of pattern formation of the transparent conductive film to be formed, the battery reaction between the pixel electrode and the conductor layer can be prevented. Moreover, since the transparent conductive film is used, a thin light-shielding layer can be obtained.

【0037】また、遮光層あるいは遮光層となる透明の
レジスト,透明導電膜を、絶縁保護膜のエッチングマス
クとすることにより、工程削減が可能となる。そして、
絶縁保護膜が基板全面を被った状態でブラックマトリク
ス形成を行うことから、ブラックマトリクス形成工程に
おける汚染環境からTFTアレイを保護する。したがっ
て、黒色レジストの加工時における電池反応によるAl
腐食/ITO還元による黒化を防止できる。また、無色
透明のレジストであらかじめブラックマトリクスパター
ンを形成し、後で着色することにより、ブラックマトリ
クスパターンの形状制御性を向上できる。
Further, it is possible to reduce the number of steps by using the light-shielding layer or the transparent resist or transparent conductive film to be the light-shielding layer as an etching mask for the insulating protective film. And
Since the black matrix is formed with the insulating protective film covering the entire surface of the substrate, the TFT array is protected from the contamination environment in the black matrix forming step. Therefore, Al due to the battery reaction during the processing of the black resist
Blackening due to corrosion / ITO reduction can be prevented. Further, the shape controllability of the black matrix pattern can be improved by forming the black matrix pattern in advance with a colorless and transparent resist and then coloring it.

【0038】さらに、電着ブラックマトリクスをTFT
アレイ上に直接形成することで薄膜ブラックマトリクス
を得ることができる。
Further, the electrodeposition black matrix is replaced with a TFT.
A thin film black matrix can be obtained by directly forming on the array.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の第1の実施の形態の液晶表示装置に
おけるTFT基板の製造方法を示す工程順断面図。
FIG. 1 is a cross-sectional view in order of the steps, showing a method for manufacturing a TFT substrate in a liquid crystal display device according to a first embodiment of the present invention.

【図2】この発明の第2の実施の形態の液晶表示装置に
おけるTFT基板の製造方法を示す工程順断面図。
2A to 2C are cross-sectional views in order of the steps, showing a method for manufacturing a TFT substrate in a liquid crystal display device according to a second embodiment of the present invention.

【図3】この発明の第3の実施の形態の液晶表示装置に
おけるTFT基板の製造方法を示す工程順断面図。
3A to 3C are cross-sectional views in order of the steps, showing a method for manufacturing a TFT substrate in a liquid crystal display device according to a third embodiment of the present invention.

【図4】この発明の第4の実施の形態の液晶表示装置に
おけるTFT基板の製造方法を示す工程順断面図。
4A to 4C are cross-sectional views in order of the steps, showing a method for manufacturing a TFT substrate in a liquid crystal display device according to a fourth embodiment of the present invention.

【図5】従来の液晶表示装置におけるTFT基板の製造
方法を示す工程順断面図。
FIG. 5 is a cross-sectional view in order of the steps, showing a method for manufacturing a TFT substrate in a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

1 絶縁性透明基板 2 ゲート電極 6 画素電極 7 ソース・ドレイン電極 8 絶縁保護膜 9,9A,9B ブラックマトリクス 9a 無色透明のレジスト 9b 透明導電膜 1 Insulating Transparent Substrate 2 Gate Electrode 6 Pixel Electrode 7 Source / Drain Electrode 8 Insulation Protective Film 9, 9A, 9B Black Matrix 9a Colorless Transparent Resist 9b Transparent Conductive Film

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 2つの基板間に液晶層を挟持した液晶表
示装置であって、 前記2つの基板のうち一方の基板は、 絶縁性基板上に画素電極,非線形素子およびこの非線形
素子に信号を供給する導電体層を形成し、前記画素電極
および前記導電体層の実装部分を除く領域を覆うように
絶縁保護膜を形成し、前記絶縁保護膜上の全面に遮光層
を形成したことを特徴とする液晶表示装置。
1. A liquid crystal display device in which a liquid crystal layer is sandwiched between two substrates, wherein one of the two substrates is a pixel electrode, a non-linear element, and a signal to the non-linear element on an insulating substrate. A conductive layer to be supplied is formed, an insulating protective film is formed so as to cover a region other than a mounting portion of the pixel electrode and the conductive layer, and a light shielding layer is formed on the entire surface of the insulating protective film. Liquid crystal display device.
【請求項2】 2つの基板間に液晶層を挟持した液晶表
示装置の製造方法であって、 前記2つの基板のうち一方の基板の形成方法は、 絶縁性基板上に画素電極,非線形素子およびこの非線形
素子に信号を供給する導電体層を形成した後、前記画素
電極,前記非線形素子および前記導電体層を覆うように
絶縁保護膜を形成する工程と、 前記画素電極および前記導電体層の実装部分を除く領域
の前記絶縁保護膜上に遮光層を形成する工程と、 前記遮光層をマスクとして前記絶縁保護膜をエッチング
して前記画素電極および前記導電体層の実装部分を露出
させる工程とを含むことを特徴とする液晶表示装置の製
造方法。
2. A method of manufacturing a liquid crystal display device in which a liquid crystal layer is sandwiched between two substrates, wherein one of the two substrates is formed by a pixel electrode, a non-linear element, and A step of forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductor layer after forming a conductor layer for supplying a signal to the non-linear element; and a step of forming the pixel electrode and the conductor layer. A step of forming a light-shielding layer on the insulating protective film in a region excluding a mounting portion, and a step of exposing the mounting portion of the pixel electrode and the conductor layer by etching the insulating protective film using the light-shielding layer as a mask A method for manufacturing a liquid crystal display device, comprising:
【請求項3】 2つの基板間に液晶層を挟持した液晶表
示装置の製造方法であって、 前記2つの基板のうち一方の基板の形成方法は、 絶縁性基板上に画素電極,非線形素子およびこの非線形
素子に信号を供給する導電体層を形成した後、前記画素
電極,前記非線形素子および前記導電体層を覆うように
絶縁保護膜を形成する工程と、 前記画素電極および前記導電体層の実装部分を除く領域
の前記絶縁保護膜上に透明のレジストを形成する工程
と、 前記透明のレジストを着色して遮光層とする工程と、 前記遮光層をマスクとして前記絶縁保護膜をエッチング
して前記画素電極および前記導電体層の実装部分を露出
させる工程とを含むことを特徴とする液晶表示装置の製
造方法。
3. A method of manufacturing a liquid crystal display device in which a liquid crystal layer is sandwiched between two substrates, wherein one of the two substrates is formed by a pixel electrode, a non-linear element and a non-linear element on an insulating substrate. A step of forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductor layer after forming a conductor layer for supplying a signal to the non-linear element; and a step of forming the pixel electrode and the conductor layer. A step of forming a transparent resist on the insulating protective film in a region excluding the mounting portion, a step of coloring the transparent resist to form a light shielding layer, and etching the insulating protective film using the light shielding layer as a mask And a step of exposing a mounting portion of the pixel electrode and the conductive layer, the method of manufacturing a liquid crystal display device.
【請求項4】 2つの基板間に液晶層を挟持した液晶表
示装置の製造方法であって、 前記2つの基板のうち一方の基板の形成方法は、 絶縁性基板上に画素電極,非線形素子およびこの非線形
素子に信号を供給する導電体層を形成した後、前記画素
電極,前記非線形素子および前記導電体層を覆うように
絶縁保護膜を形成する工程と、 前記画素電極および前記導電体層の実装部分を除く領域
の前記絶縁保護膜上に透明のレジストを形成する工程
と、 前記透明のレジストをマスクとして前記絶縁保護膜をエ
ッチングして前記画素電極および前記導電体層の実装部
分を露出させる工程と、 前記透明のレジストを着色して遮光層とする工程とを含
むことを特徴とする液晶表示装置の製造方法。
4. A method of manufacturing a liquid crystal display device in which a liquid crystal layer is sandwiched between two substrates, wherein one of the two substrates is formed by a pixel electrode, a non-linear element, and a non-linear element on an insulating substrate. A step of forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductor layer after forming a conductor layer for supplying a signal to the non-linear element; and a step of forming the pixel electrode and the conductor layer. Forming a transparent resist on the insulating protective film in a region other than the mounting portion, and etching the insulating protective film using the transparent resist as a mask to expose the mounting portion of the pixel electrode and the conductor layer A method for manufacturing a liquid crystal display device, comprising: a step; and a step of coloring the transparent resist to form a light shielding layer.
【請求項5】 2つの基板間に液晶層を挟持した液晶表
示装置の製造方法であって、 前記2つの基板のうち一方の基板の形成方法は、 絶縁性基板上に画素電極,非線形素子およびこの非線形
素子に信号を供給する導電体層を形成した後、前記画素
電極,前記非線形素子および前記導電体層を覆うように
絶縁保護膜を形成する工程と、 前記画素電極および前記導電体層の実装部分を除く領域
の前記絶縁保護膜上に透明導電膜を形成する工程と、 前記透明導電膜に電着塗料を凝固析出させて遮光層とす
る工程と、 前記遮光層をマスクとして前記絶縁保護膜をエッチング
して前記画素電極および前記導電体層の実装部分を露出
させる工程とを含むことを特徴とする液晶表示装置の製
造方法。
5. A method of manufacturing a liquid crystal display device in which a liquid crystal layer is sandwiched between two substrates, wherein one of the two substrates is formed by a pixel electrode, a non-linear element, and A step of forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductor layer after forming a conductor layer for supplying a signal to the non-linear element; and a step of forming the pixel electrode and the conductor layer. A step of forming a transparent conductive film on the insulating protective film in a region excluding a mounting portion; a step of coagulating and depositing an electrodeposition paint on the transparent conductive film to form a light shielding layer; and the insulating protection using the light shielding layer as a mask. Etching the film to expose the mounting portion of the pixel electrode and the conductive layer, the method for manufacturing a liquid crystal display device.
【請求項6】 2つの基板間に液晶層を挟持した液晶表
示装置の製造方法であって、 前記2つの基板のうち一方の基板の形成方法は、 絶縁性基板上に画素電極,非線形素子およびこの非線形
素子に信号を供給する導電体層を形成した後、前記画素
電極,前記非線形素子および前記導電体層を覆うように
絶縁保護膜を形成する工程と、 前記画素電極および前記導電体層の実装部分を除く領域
の前記絶縁保護膜上に透明導電膜を形成する工程と、 前記透明導電膜をマスクとして前記絶縁保護膜をエッチ
ングして前記画素電極および前記導電体層の実装部分を
露出させる工程と、 前記透明導電膜に電着塗料を凝固析出させて遮光層とす
る工程とを含むことを特徴とする液晶表示装置の製造方
法。
6. A method of manufacturing a liquid crystal display device in which a liquid crystal layer is sandwiched between two substrates, wherein one of the two substrates is formed by forming a pixel electrode, a non-linear element, and a non-linear element on an insulating substrate. A step of forming an insulating protective film so as to cover the pixel electrode, the non-linear element and the conductor layer after forming a conductor layer for supplying a signal to the non-linear element; and a step of forming the pixel electrode and the conductor layer. A step of forming a transparent conductive film on the insulating protective film in a region excluding the mounting portion, and etching the insulating protective film using the transparent conductive film as a mask to expose the mounting portion of the pixel electrode and the conductor layer A method of manufacturing a liquid crystal display device, comprising: a step; and a step of solidifying and depositing an electrodeposition coating material on the transparent conductive film to form a light shielding layer.
JP24756695A 1995-09-26 1995-09-26 Liquid crystal display device and method of manufacturing the same Expired - Fee Related JP3046931B2 (en)

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US6387600B1 (en) 1999-08-25 2002-05-14 Micron Technology, Inc. Protective layer during lithography and etch
KR100436011B1 (en) * 1996-11-26 2004-11-06 삼성전자주식회사 Liquid crystal displays using an organic insulator layer, and methods of fabricating the same
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US7098480B2 (en) 1999-04-26 2006-08-29 Samsung Electronics Co., Ltd. Thin film transistor array panel and a method for manufacturing the same
KR100705629B1 (en) * 2004-12-11 2007-04-11 비오이 하이디스 테크놀로지 주식회사 Method for fabricating array substrate in TFT-LCD
KR100754125B1 (en) * 2005-11-23 2007-08-30 삼성에스디아이 주식회사 Fabricating Method of Liquid Crystal Display
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100436011B1 (en) * 1996-11-26 2004-11-06 삼성전자주식회사 Liquid crystal displays using an organic insulator layer, and methods of fabricating the same
US7393726B2 (en) 1999-04-26 2008-07-01 Samsung Electronics Co., Ltd. Thin film transistor array panel and methods for manufacturing the same
US7943939B2 (en) 1999-04-26 2011-05-17 Samsung Electronics Co., Ltd. Thin film transistor array panel and methods for manufacturing the same
US7759176B2 (en) 1999-04-26 2010-07-20 Samsung Electronics Co., Ltd. Thin film transistor array panel and methods for manufacturing the same
KR100601170B1 (en) * 1999-04-26 2006-07-13 삼성전자주식회사 Thin film transistor panels for display device and manufacturing methods thereof
US7098480B2 (en) 1999-04-26 2006-08-29 Samsung Electronics Co., Ltd. Thin film transistor array panel and a method for manufacturing the same
US7528536B2 (en) 1999-08-25 2009-05-05 Micron Technology, Inc. Protective layer for corrosion prevention during lithography and etch
US6387600B1 (en) 1999-08-25 2002-05-14 Micron Technology, Inc. Protective layer during lithography and etch
US6759181B2 (en) 1999-08-25 2004-07-06 Micron Technology, Inc. Protective layer for corrosion prevention during lithography and etch
US6548227B2 (en) 1999-08-25 2003-04-15 Micron Technology, Inc. Protective layer for corrosion prevention during lithography and etch
KR100705629B1 (en) * 2004-12-11 2007-04-11 비오이 하이디스 테크놀로지 주식회사 Method for fabricating array substrate in TFT-LCD
KR100754125B1 (en) * 2005-11-23 2007-08-30 삼성에스디아이 주식회사 Fabricating Method of Liquid Crystal Display
US9520415B2 (en) 2013-12-27 2016-12-13 Samsung Display Co., Ltd. Display device and method of fabricating the same

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