JPH10104595A - Display device and manufacture therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce reflection of gate wiring or source wiring composing TFT. SOLUTION: In a staggered type TFT which has a source drain electrode 5, a semiconductor layer 6, and a gate electrode at least, of which each is formed via an insulation film 3, a reflection prevention film 10 is sequentially formed on bare gate wiring and source wiring by means of an electro-deposition method. A picture element electrode 4 is patterned, the source drain electrode is patterned, the gate electrode is patterned via the semiconductor layer 6, an unnecessary part of semiconductor layer composing film is etched off by using the gate electrode 7 pattern as a mask, and the source electrode and gate electrode 7 bared by the etching are provided with the reflection prevention treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an array of electronic components and a method of manufacturing the same. More specifically, the present invention relates to a TFT array having a structure in which a black matrix (hereinafter, referred to as BM) is directly disposed on a surface of a thin film transistor array (hereinafter, referred to as TFT) constituting a display device, and a method of manufacturing the same.

[0002]

2. Description of the Related Art As a prior art example in this field, for example, Japanese Patent Application Laid-Open No.
As described in JP-A-64112, a light-shielding film 2 is patterned on an insulating transparent substrate 1, and then an interlayer insulating film 3 is formed on the entire surface of the substrate (FIG. 3A). Next, the pixel electrode 4 and the source / drain electrode 5 are sequentially patterned (FIG. 3B). Next, the semiconductor layer constituting film 6 and the gate electrode film 7 are formed by lamination (FIG. 3C). Next, after etching the gate electrode 7 by photolithography, the semiconductor layer constituting film 6 other than under the gate electrode 7 is removed by etching.
The TFT array 8a is completed (FIG. 3D).

[0003]

According to the conventional configuration,
The gate electrode is usually made of low resistance aluminum or aluminum alloy. However, when a display device is configured with a TFT using aluminum wiring, the light reflected from aluminum is as large as about 90% because the light reflectance of aluminum is as large as about 90%. There is a problem that the luminance of black is increased and the contrast ratio is significantly deteriorated as compared with the contrast ratio of a liquid crystal display device without aluminum which is experimentally created.

SUMMARY OF THE INVENTION An object of the present invention is to provide a display device having a high contrast ratio, a small surface reflectivity, and a display characteristic which is easy to see, and a method of manufacturing the same, in order to overcome the above-mentioned conventional problems.

[0005]

In order to achieve the above object, the present invention provides a display device in which a dark film is formed by an electrodeposition method in an anti-reflection treatment of a wiring electrode material, and a pixel in order to achieve the display device. Patterning an electrode, patterning a source / drain electrode, a semiconductor layer,
A step of sequentially applying an insulating film, a step of patterning a gate electrode, a step of etching and removing unnecessary portions of the semiconductor layer and the insulating film, and a surface of the gate electrode or exposed after etching with the gate electrode. Performing an antireflection treatment on both surfaces of the source electrode.

[0006] According to the electrodeposition method, a TFT array is immersed in a paint containing an achromatic pigment and a polymer resin by mixing a plurality of black pigments or colored pigments, and applying an anode to a source electrode or a gate electrode. Thus, the pigment-containing resin particles precipitate on the anode to form an antireflection film.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be specifically described below with reference to embodiments.

In the present invention, a light-shielding film 2 is patterned on an insulating transparent substrate 1, and then an interlayer insulating film 3 is formed on the entire surface of the substrate (FIG. 1a). Next, the pixel electrode 4 and the source / drain electrode 5 are sequentially patterned (FIG. 1B). Next, the semiconductor layer constituting film 6 and the gate electrode film 7 are formed by lamination (FIG. 1).
c). Next, after patterning the gate electrode film 7 using a general positive resist, the semiconductor layer constituting film 6 other than under the gate electrode is removed by etching. As a result, the source / drain electrode film 5 is exposed, and a conductive film surface is obtained. Then, the conductive film surface is exposed by removing the positive resist of the gate electrode film 7 (FIG. 1D).

Next, an electrodeposition paint 9 containing a black pigment (for example, carbon black) and a crosslinkable polymer resin (for example, melamine resin, epoxy resin, acrylate resin, etc.)
The TFT array 8a is immersed in the electrodeposition bath containing the, and an anode is applied to the source electrode 5 or the gate electrode 7, thereby depositing black-containing resin particles on the anode to provide an antireflection film (FIG. 2). Thereafter, the deposited electrodeposition coating film is thermally crosslinked by drying, and is baked and rendered non-conductive to obtain the antireflection film 10. Thus, the TFT array 8b is completed (FIG. 1).
e).

In this embodiment, a resist protective film is not provided in the anti-reflection film forming step, but the pixel electrode may be protected if necessary. Further, a black pigment is used for the electrodeposition paint, but this is not a limitation as long as a low reflectance such as an achromatic pigment is obtained by mixing a plurality of colored pigments.

[0011]

According to the present invention, antireflection treatment can be performed on the entire exposed portion including the side walls of the gate wiring electrode and the source wiring electrode. As a result, it has an effect of reducing the reflection of light from the gate electrode and the source electrode, and the liquid crystal display device using the same does not lower the contrast ratio. And there is an effect that surface reflection is small and easy-to-see display characteristics can be obtained. With these effects, the effect of improving the display image quality can be obtained.

[Brief description of the drawings]

FIG. 1 is a sectional view of a TFT array process of the present invention.

FIG. 2 is a conceptual diagram of electrodeposition coating according to the present invention.

FIG. 3 is a sectional view of a conventional TFT array process.

[Description of Signs] 1 Transparent substrate 2 Light-shielding film 3 Interlayer insulating film 4 Pixel electrode 5 Source / drain electrode 6 Semiconductor layer constituent film 7 Gate electrode 8 TFT array 9 Electrodeposition paint 10 Anti-reflection film

Claims (3)

[Claims] 1. A display device wherein a pigment is attached to the surface of a wiring electrode material by an electrodeposition method to form an antireflection film. 2. A switching element comprising a forward staggered thin film transistor having at least a source / drain electrode, a semiconductor layer and a gate electrode, each of which is formed with an insulating film interposed therebetween, and at least one of an exposed gate wiring and a source wiring. A display device, wherein one surface is subjected to an antireflection treatment by an electrodeposition method. A step of patterning a pixel electrode; a step of patterning a source / drain electrode; a step of sequentially depositing a semiconductor layer and an insulating film; a step of patterning a gate electrode; A method for manufacturing a display device, comprising: a step of etching and removing unnecessary portions of an insulating film; and a step of performing an antireflection treatment on the surface of the gate electrode or on both surfaces of the gate electrode and the source electrode exposed after etching. .