JPH0982740A - Height measuring device of bonding wire - Google Patents

Height measuring device of bonding wire

Info

Publication number
JPH0982740A
JPH0982740A JP7236887A JP23688795A JPH0982740A JP H0982740 A JPH0982740 A JP H0982740A JP 7236887 A JP7236887 A JP 7236887A JP 23688795 A JP23688795 A JP 23688795A JP H0982740 A JPH0982740 A JP H0982740A
Authority
JP
Japan
Prior art keywords
bonding wire
height
measuring device
chip
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7236887A
Other languages
Japanese (ja)
Inventor
Shoji Kato
昭治 加藤
Sadao Fukuda
定夫 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TSUKUBA SEIKO KK
Original Assignee
TSUKUBA SEIKO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TSUKUBA SEIKO KK filed Critical TSUKUBA SEIKO KK
Priority to JP7236887A priority Critical patent/JPH0982740A/en
Priority to PCT/JP1997/000801 priority patent/WO1998040695A1/en
Priority to TW086103171A priority patent/TW365037B/en
Publication of JPH0982740A publication Critical patent/JPH0982740A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608Height gauges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

PROBLEM TO BE SOLVED: To provide a height measuring device for a bonding wire for reducing failure rate by measuring the height of the bonding wire that connects an IC chip and a lead frame, and securing adequate height. SOLUTION: The height measuring device 21 of a bonding wire comprises a laser beam generating device 22 that is provided with a laser focusing structure 22h to measure the height of the bonding wire 25 at the upper position of the bonding wire 25 in the structure the bonding wire 25, that is welded to the upper surface of an IC chip 23, extends upward, curves shaping chevron and drops downward to the surface of a lead frame 24. A laser beam 22K emitted from the laser beam generating device 22 is reflected by the bonding wire 25 that is the measuring object and receiving the reflected laser beam 22K, the height of the bonding wire 25 is calculated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ICの品質保証を
するためにICチップとリードフレームとの間を結線し
た、ボンディングワイヤの高さを測定する高さ測定装置
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a height measuring device for measuring the height of a bonding wire, which is connected between an IC chip and a lead frame in order to guarantee the quality of the IC.

【0002】[0002]

【従来の技術】従来この種のものとしては、例えば図3
に示すようにリードフレーム7上に接着剤9で接着され
たICチップ6と、電極外部とを結ぶリードフレーム7
とを結線する、いわゆるワイヤボンディングがある。こ
れは、生産に入る前の試作時点において、生産用のワイ
ヤボンディング装置(図示省略)を使用して実際に何度
もボンディングワイヤ8を結線し、ボンディング状態を
拡大鏡や顕微鏡等を使用して目視検査をしているもので
ある。
2. Description of the Related Art Conventionally, as this kind, for example, FIG.
The lead frame 7 connecting the IC chip 6 adhered onto the lead frame 7 with the adhesive 9 and the outside of the electrode as shown in FIG.
There is so-called wire bonding, which connects to and. This is because the bonding wire 8 is actually connected many times using a wire bonding device for production (not shown) at the time of trial production before the production starts, and the bonding state is changed by using a magnifying glass or a microscope. It is a visual inspection.

【0003】そして、この試作されたボンディングワイ
ヤ8の融着部であるボール8aの大きさやクレセント8
bの形状の適正を確認し、ボンディングワイヤ8の高低
や変形等の欠陥の有無を目視判断して、適正に製作でき
る状態になった時点で、生産に入ることが一般に行なわ
れている。
The size of the ball 8a, which is the fusion-bonded portion of the bonding wire 8 thus manufactured, and the crescent 8
It is general to start production after confirming the appropriateness of the shape of b, visually judging the presence or absence of defects such as height and deformation of the bonding wire 8, and when it is in a state where it can be properly manufactured.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前記ボ
ンディングワイヤ8を結線した後ボンディング状態を目
視検査する方法は平面で見るのが主体で、三次元的にボ
ンディングワイヤ8の高低の良否を数十μmの単位で目
視検査するのは難しい。そして、結線されたボンディン
グワイヤ8が樹脂封止時に、樹脂封子部から飛び出した
り変形して絡み短絡したりICチップ6と接触したりす
るのが不良の主な原因になっていた。
However, the method of visually inspecting the bonding state after connecting the bonding wire 8 is mainly to see it in a plane, and the quality of the bonding wire 8 is three-dimensionally determined by several tens of μm. It is difficult to visually inspect each unit. The main cause of the defect is that the bonded bonding wire 8 jumps out of the resin encapsulation portion or is deformed and entangled to cause a short circuit or contact with the IC chip 6 during resin encapsulation.

【0005】そして、最終工程の動作試験において不良
が見出されると不良の該当する工程を再検査し原因解析
をする必要がしばしば発生していた。
When a defect is found in the operation test of the final process, it is often necessary to reinspect the process corresponding to the defect and analyze the cause.

【0006】そこで、この発明は、ICチップとリード
フレームとを結ぶボンディングワイヤ高さを測定し適正
高さを確保して、不良の低減を図るボンディングワイヤ
高さ測定装置を提供することを目的にしている。
Therefore, an object of the present invention is to provide a bonding wire height measuring device which measures the height of a bonding wire connecting an IC chip and a lead frame to ensure an appropriate height and reduces defects. ing.

【0007】[0007]

【課題を解決するための手段】この目的を達成するた
め、請求項1に記載の発明は、ICチップ上面に溶着さ
れたボンディングワイヤが、上方へ向かって延び湾曲し
て山なりにリードフレーム面まで下がる構造物におい
て、前記ボンディングワイヤの高さが測れるように、被
測定物である前記ボンディングワイヤの上方の位置にレ
ーザフォーカス機構を有するレーザ光発生装置を設け、
該レーザ光発生装置より出力されたレーザ光は被測定物
であるボンディングワイヤにより反射され、反射された
該レーザ光を受光してボンディングワイヤの高さを算出
することを特徴としている。
In order to achieve this object, the invention as set forth in claim 1 is such that the bonding wire welded to the upper surface of the IC chip extends upward and curves to form a ridged lead frame surface. In the structure that goes down to, so that the height of the bonding wire can be measured, a laser light generator having a laser focus mechanism is provided at a position above the bonding wire that is the object to be measured,
The laser beam output from the laser beam generator is reflected by the bonding wire that is the object to be measured, and the reflected laser beam is received to calculate the height of the bonding wire.

【0008】この請求項1に記載の発明では、ICチッ
プ面からの反射レーザ光を捉えることができるので、I
Cチップ面より上方にあるボンディングワイヤの高さも
間隔も随時測定することができる。
According to the first aspect of the invention, since the reflected laser light from the IC chip surface can be captured, I
The height and spacing of the bonding wires above the C-chip surface can be measured at any time.

【0009】請求項2に記載のボンディングワイヤ高さ
測定装置は、請求項1に記載のボンディングワイヤ高さ
測定装置において、前記レーザ光の反射・受光により、
前記ICチップ上面の角部の少なくとも三箇所を測定し
前記ICチップの仮想平面を算出すると共に、前記レー
ザ光が前記ICチップ外周に沿うように前記X,Yテー
ブルを駆動させることを特徴としている。
A bonding wire height measuring device according to a second aspect of the present invention is the bonding wire height measuring device according to the first aspect, in which the laser beam is reflected / received,
At least three corners of the upper surface of the IC chip are measured to calculate a virtual plane of the IC chip, and the X and Y tables are driven so that the laser light is along the outer periphery of the IC chip. .

【0010】この請求項2に記載された発明では、請求
項1に記載のボンディングワイヤ高さ測定装置におい
て、ICチップ外周部でボンディングワイヤの高さの適
正域を基準化して置くことによって不良発生の低減が図
れる。
According to the invention described in claim 2, in the bonding wire height measuring apparatus according to claim 1, a defect is generated by arranging the proper range of the height of the bonding wire at the outer peripheral portion of the IC chip as a standard. Can be reduced.

【0011】請求項3に記載のボンディングワイヤ高さ
測定装置は、前記X,Yテーブルの動作機能と座標デー
タとを指令する制御装置、レーザフォーカス量によるア
ナログ出力と座標データとを対応させる測定器及び演算
表示機能を有する演算装置を設けたことを特徴としてい
る。
A bonding wire height measuring device according to a third aspect of the present invention is a control device for instructing an operating function of the X and Y tables and coordinate data, and a measuring device for making an analog output by a laser focus amount correspond to coordinate data. And an arithmetic unit having an arithmetic display function is provided.

【0012】この請求項3に記載された発明では、請求
項1又は2に記載のボンディングワイヤ高さ測定装置に
おいて、高さの測定、表示も自動化できると同時に、測
定値のビジュアル表示ができるので結果を把握し易く、
また、判断し易い。さらに、適正高さ域を外れるものは
「除去」の指令判断も出せるので不良の選別が可能とな
る。
According to the third aspect of the invention, in the bonding wire height measuring apparatus according to the first or second aspect, the height can be automatically measured and displayed, and at the same time, the measured value can be visually displayed. Easy to understand the result,
Also, it is easy to judge. Further, if the height is out of the proper height range, a command for "removal" can be issued, so that defects can be sorted.

【0013】[0013]

【発明の実施の形態】本発明の実施の形態を、図1及び
図2に基づいて説明する。
BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to FIGS.

【0014】図1及び2は、それぞれ実施の形態の構造
及び作用を示すものである。
1 and 2 show the structure and operation of the embodiment, respectively.

【0015】まず構成を説明すると、図1(a)におい
て、21はボンディングワイヤ高さ測定装置、22はレ
ーザ光発生装置、23はICチップ、24はリードフレ
ーム、25はボンディングワイヤである。このレーザ発
生装置22からはレーザ光22kが出力されている。
First, referring to FIG. 1A, 21 is a bonding wire height measuring device, 22 is a laser beam generator, 23 is an IC chip, 24 is a lead frame, and 25 is a bonding wire. Laser light 22k is output from the laser generator 22.

【0016】また、図1(b)は、レーザ発生装置22
より出力されたレーザ光22kの反射・受光により高さ
の測定を行なう測定器28内を示している。
Further, FIG. 1B shows a laser generator 22.
The inside of the measuring device 28 for measuring the height by reflecting and receiving the laser beam 22k outputted from the laser beam is shown.

【0017】すなわち、22aは半導体レーザ、22
b,22cはハーフミラーA,B、22dは受光素子、
22eはピンホール、22fはコリメートレンズ、22
gは対物レンズ、22hはレーザフォーカス機構で被対
象物の高低に合わせてレーザ光22kのスポット22p
が上下するように対物レンズ22gを駆動させる、22
nはCCDカメラでスポット22pの反射レーザ光22
kを取り込み演算装置29に転送する。この機構で測定
器28を構成している。
That is, 22a is a semiconductor laser, and 22 is a semiconductor laser.
b and 22c are half mirrors A and B, 22d is a light receiving element,
22e is a pinhole, 22f is a collimating lens, 22
g is an objective lens, 22h is a laser focus mechanism, and the spot 22p of the laser beam 22k is adjusted according to the height of the object.
The objective lens 22g is driven so that
n is the CCD camera and the reflected laser light 22 of the spot 22p
The k is fetched and transferred to the arithmetic unit 29. This mechanism constitutes the measuring device 28.

【0018】そして、このレーザ発生装置22と測定器
28は図示省略のX,Yテーブルに一体に装着されお
り、レーザ発生装置22の下方に治具設置されたボンデ
ィングワイヤ25上を駆動されるボンディングワイヤ高
さ測定装置21が構成されている。
The laser generator 22 and the measuring device 28 are integrally mounted on an X, Y table (not shown), and the bonding is driven on the bonding wire 25 installed in the jig below the laser generator 22. A wire height measuring device 21 is configured.

【0019】次に、図2によりボンディングワイヤ高さ
測定装置21の機能について説明する。
Next, the function of the bonding wire height measuring device 21 will be described with reference to FIG.

【0020】レーザ光発生装置22と測定器28とを一
体に装着したX,Yテーブル26は制御装置27により
ICチップ23周縁部のパス軌道・スピード等が指令駆
動される。このパス軌道はICチップ23とリードフレ
ーム24との関係高さ等により、ICチップ23周縁部
を何回周回しても、曲線パス軌道をしてもよく、いずれ
もICチップ23の仮想平面からのボンディングワイヤ
25高さとして捉えればよい。
The X, Y table 26, in which the laser beam generator 22 and the measuring device 28 are integrally mounted, is commanded by the controller 27 for the path orbit and speed of the peripheral portion of the IC chip 23. Depending on the height of the relationship between the IC chip 23 and the lead frame 24, this path orbit may be rounded around the periphery of the IC chip 23 or may be a curved path orbit. It can be regarded as the height of the bonding wire 25.

【0021】また、このX,Yテーブル26の駆動にリ
ンクして、レーザ光発生装置22aの4出力(レーザO
N,ホールド,オフセット,ピークセット)とレーザフ
ォーカス機構22h作動によるアナログ出力は測定器2
8に転送され、制御装置27から転送されてきた座標デ
ータとマッチングさせながら演算装置29に転送する。
Further, linked to the driving of the X and Y table 26, the four outputs of the laser light generator 22a (laser O
(N, hold, offset, peak set) and the analog output by operating the laser focus mechanism 22h is the measuring instrument 2
8 and the coordinate data transferred from the control device 27 is matched and transferred to the arithmetic device 29.

【0022】そして、処理されたデータは出力表示例2
9aに示すようにボンディングワイヤ25の位置や高さ
のピークホールド表示や数値データ表示等を表示する。
また、この演算装置29からは処理データの一部をフィ
ードバックして、更に測定動作を繰り返す指令を転送す
る。
Then, the processed data is output display example 2
As shown in 9a, the peak hold display and numerical data display of the position and height of the bonding wire 25 are displayed.
Further, a part of the processed data is fed back from the arithmetic unit 29, and a command for repeating the measurement operation is further transferred.

【0023】また、演算装置29では、入力されている
規格値から測定データの良否判定を行い、不良品の「除
去」指令等も出力できるのは勿論である。
In addition, it goes without saying that the arithmetic unit 29 can judge whether the measured data is good or bad from the inputted standard value, and can also output a "removal" command for defective products.

【0024】ここで、レーザフォーカス機構22hと
は、図1(b)に示すように、半導体レーザ22aから
出力されたレーザ光22kのスポット22pが被測定物
であるICチップ23の表面で反射し受光素子へ戻る
(レーザ光を実線で示している)、次にレーザ光22k
がボンディングワイヤ25に当ったスポット22pの位
置はICチップ23表面よりも高い位置にあり、そのま
まではスポット22pの反射光は受光素子22dへは戻
らないので、対物レンズ22gを駆動させスポット22
pの反射光(レーザ光を破線で示している)がピンホー
ル22eを通過して受光素子へ戻るようにした対物レン
ズ22gの駆動機構を云う。よって、この対物レンズ2
2gの駆動量を高さとして測定に使うことができる。
Here, as shown in FIG. 1B, the laser focus mechanism 22h means that the spot 22p of the laser beam 22k outputted from the semiconductor laser 22a is reflected on the surface of the IC chip 23 as the object to be measured. Return to the light receiving element (laser light is shown by the solid line), then laser light 22k
The position of the spot 22p hitting the bonding wire 25 is higher than the surface of the IC chip 23. Since the reflected light of the spot 22p does not return to the light receiving element 22d as it is, the objective lens 22g is driven to drive the spot 22p.
This is a drive mechanism of the objective lens 22g in which the reflected light of p (the laser light is shown by a broken line) passes through the pinhole 22e and returns to the light receiving element. Therefore, this objective lens 2
The driving amount of 2 g can be used as the height for the measurement.

【0025】[0025]

【実施例】更に、以下のような条件で実験した結果、極
めて精度のよい測定値が得られた。
EXAMPLES Further, as a result of an experiment under the following conditions, extremely accurate measured values were obtained.

【0026】レーザ光発生装置関係: *レーザスポット径: φ 2.0 μm *測定範囲: ± 0.3 mm *作動距離: 5 mm *応答時間: 2.2 ms 測定関係: *X,Yテーブル駆動スピード: 3〜5 mm/s *表示=ピーク、ピークホールド、デジタル・データ 規格値(ボンディングワイヤ高さ:μm) * 200 ±5%Laser light generator-related: * Laser spot diameter: φ 2.0 μm * Measuring range: ± 0.3 mm * Working distance: 5 mm * Response time: 2.2 ms Measuring relationship: * X, Y table Drive speed: 3 to 5 mm / s * Display = peak, peak hold, digital data Standard value (bonding wire height: μm) * 200 ± 5%

【0027】[0027]

【発明の効果】本発明に係るボンディングワイヤ高さ測
定装置を使用することにより、各ボンディングワイヤ高
さが適正域に入っているか確認ができる。したがって、
良否の選定により不良品を次工程に流出させないと同時
に、過去の不良の解析データと照合でき早急な対策が打
てる。
By using the bonding wire height measuring device according to the present invention, it is possible to confirm whether each bonding wire height is within the proper range. Therefore,
By selecting good or bad, defective products can be prevented from leaking to the next process, and at the same time, it can be collated with the analysis data of past defects and immediate measures can be taken.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a)はワイヤボンディング高さ測定を示す斜
視図である。 (b)はレーザ光による高さ測定を示す説明図である。
FIG. 1A is a perspective view showing a wire bonding height measurement. (B) is explanatory drawing which shows the height measurement by a laser beam.

【図2】本発明によるボンディングワイヤ高さ測定装置
のブロック図である。
FIG. 2 is a block diagram of a bonding wire height measuring device according to the present invention.

【図3】従来技術によるワイヤボンディング状態を示す
平面図である。
FIG. 3 is a plan view showing a wire bonding state according to a conventional technique.

【符号の説明】[Explanation of symbols]

21…ボンディングワイヤ高さ測定装置 22…レーザ光発生装置 22h…レーザフォーカス機構 22k…レーザ光 23…ICチップ 24…リードフレーム 25…ボンディングワイヤ 26…X,Yテーブル 27…制御装置 28…測定器 29…演算装置 21 ... Bonding wire height measuring device 22 ... Laser light generating device 22h ... Laser focus mechanism 22k ... Laser light 23 ... IC chip 24 ... Lead frame 25 ... Bonding wire 26 ... X, Y table 27 ... Control device 28 ... Measuring instrument 29 … Arithmetic device

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ICチップ上面に溶着されたボンディン
グワイヤが、上方へ向かって延び湾曲して山なりにリー
ドフレーム面まで下がる構造物において、 前記ボンディングワイヤの高さが測れるように、被測定
物である前記ボンディングワイヤの上方の位置にレーザ
フォーカス機構を有するレーザ光発生装置を設け、該レ
ーザ光発生装置より出力されたレーザ光は被測定物であ
るボンディングワイヤにより反射され、反射された該レ
ーザ光を受光してボンディングワイヤの高さを算出する
ことを特徴とするボンディングワイヤ高さ測定装置。
1. In a structure in which a bonding wire welded to the upper surface of an IC chip extends upward, and is curved and ridges down to the lead frame surface, an object to be measured so that the height of the bonding wire can be measured. A laser light generator having a laser focus mechanism is provided above the bonding wire, and the laser light output from the laser light generator is reflected by the bonding wire that is the DUT, and the reflected laser light is reflected. A bonding wire height measuring device, which receives light and calculates the height of the bonding wire.
【請求項2】 前記レーザ光の反射・受光により、前記
ICチップ上面の角部の少なくとも三箇所を測定し前記
ICチップの仮想平面を算出すると共に、 前記レーザ光が前記ICチップ外周に沿うように前記
X,Yテーブルを駆動させることを特徴とする請求項1
に記載のボンディングワイヤ高さ測定装置。
2. The reflection / reception of the laser light measures at least three corners of the upper surface of the IC chip to calculate a virtual plane of the IC chip, and the laser light is arranged along the outer periphery of the IC chip. 2. The X and Y tables are driven by the table.
Bonding wire height measuring device according to.
【請求項3】 前記X,Yテーブルの動作機能と座標デ
ータとを指令する制御装置、レーザフォーカス量による
アナログ出力と座標データとを対応させる測定器及び演
算表示機能を有する演算装置を設けたことを特徴とする
請求項1又は2に記載のボンディングワイヤ高さ測定装
置。
3. A control device for instructing an operation function of the X and Y tables and coordinate data, a measuring device for making an analog output according to a laser focus amount correspond to the coordinate data, and a calculation device having a calculation display function. The bonding wire height measuring device according to claim 1 or 2, wherein.
JP7236887A 1995-09-14 1995-09-14 Height measuring device of bonding wire Pending JPH0982740A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7236887A JPH0982740A (en) 1995-09-14 1995-09-14 Height measuring device of bonding wire
PCT/JP1997/000801 WO1998040695A1 (en) 1995-09-14 1997-03-13 Apparatus for measuring height of bonding wire
TW086103171A TW365037B (en) 1995-09-14 1997-03-14 Inspection apparatus for connection wiring height

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7236887A JPH0982740A (en) 1995-09-14 1995-09-14 Height measuring device of bonding wire
PCT/JP1997/000801 WO1998040695A1 (en) 1995-09-14 1997-03-13 Apparatus for measuring height of bonding wire

Publications (1)

Publication Number Publication Date
JPH0982740A true JPH0982740A (en) 1997-03-28

Family

ID=26438152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7236887A Pending JPH0982740A (en) 1995-09-14 1995-09-14 Height measuring device of bonding wire

Country Status (2)

Country Link
JP (1) JPH0982740A (en)
WO (1) WO1998040695A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062324A (en) * 2008-09-03 2010-03-18 Toyota Motor Corp Inspection device and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794976B2 (en) * 1990-05-10 1995-10-11 松下電器産業株式会社 Method for detecting lead floating in electronic components
JP2851151B2 (en) * 1990-10-12 1999-01-27 株式会社東芝 Wire bonding inspection equipment
JPH08334317A (en) * 1995-06-09 1996-12-17 Olympus Optical Co Ltd Measuring microscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062324A (en) * 2008-09-03 2010-03-18 Toyota Motor Corp Inspection device and method

Also Published As

Publication number Publication date
WO1998040695A1 (en) 1998-09-17

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