WO1998040695A1 - Apparatus for measuring height of bonding wire - Google Patents

Apparatus for measuring height of bonding wire Download PDF

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Publication number
WO1998040695A1
WO1998040695A1 PCT/JP1997/000801 JP9700801W WO9840695A1 WO 1998040695 A1 WO1998040695 A1 WO 1998040695A1 JP 9700801 W JP9700801 W JP 9700801W WO 9840695 A1 WO9840695 A1 WO 9840695A1
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WO
WIPO (PCT)
Prior art keywords
bonding wire
laser beam
height
chip
measuring device
Prior art date
Application number
PCT/JP1997/000801
Other languages
French (fr)
Japanese (ja)
Inventor
Akiharu Kato
Sadao Fukuda
Original Assignee
Tsukuba Seiko Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP7236887A priority Critical patent/JPH0982740A/en
Application filed by Tsukuba Seiko Ltd. filed Critical Tsukuba Seiko Ltd.
Priority to PCT/JP1997/000801 priority patent/WO1998040695A1/en
Publication of WO1998040695A1 publication Critical patent/WO1998040695A1/en
Priority to US09/519,354 priority patent/US6590670B1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • the present invention relates to a height measuring device for measuring the height of a bonding wire, which is connected between an IC chip and a lead frame.
  • a lead frame connecting an IC chip bonded on a lead frame with an adhesive and the outside of the electrode is used.
  • wire-bonding that connects the system and the system. This means that, at the time of prototyping before entering production, wire bonding wires are connected many times using a wire bonding device for production, and the bond wires are connected. the in g state using a magnifying glass or a microscope that has a visual inspection 0
  • the prototype bonding wire is visually judged for any defects such as height and deformation, and when it is in a state where it can be manufactured properly, production is started. And are commonly practiced. Problems to be solved by the invention
  • the method of visually inspecting the bonding state after connecting the above-mentioned bonding wire is based on the method of bonding the bonding wire to the bonding wire.
  • the main purpose is to see the size and shape of the coolant and the distance between the keys in a plane, and to determine the quality of the bonding wire in a three-dimensional manner. It is difficult to perform a visual inspection in units of.
  • the bonding wires will fly out of the resin seal during the encapsulation in the next process.
  • the main cause of the defect is that it is protruded, deformed, entangled and short-circuited, or comes into contact with the IC chip 6.
  • An object of the present invention is to provide a bonding height measuring device. Means to solve the problem
  • the present invention provides a laser light generating device having a laser force mechanism at a position above a bonding object as an object to be measured.
  • the laser beam output from the generator is reflected by a bonding wire, which is an object to be measured, and the reflected laser beam is received to bond the laser beam.
  • the feature is to calculate the height of the wire.
  • the reflected laser light from the IC chip surface can be captured, so that the bonding wire above the IC chip surface is provided. Can be measured and calculated at any time.
  • BRIEF DESCRIPTION OF THE FIGURES (a) is a perspective view which shows a wire bonding height measurement. (b) is explanatory drawing which shows height measurement by a laser beam.
  • FIG. 2 is a block diagram of the bonding wire height measuring device according to the present invention.
  • FIG. 9 is a plan view showing a bonding state according to the related art.
  • FIG. 1 An embodiment of a bonding ridge height measuring device according to the present invention will be described with reference to FIGS. 1 and 2.
  • FIG. 1 An embodiment of a bonding ridge height measuring device according to the present invention will be described with reference to FIGS. 1 and 2.
  • FIG. 1 An embodiment of a bonding ridge height measuring device according to the present invention will be described with reference to FIGS. 1 and 2.
  • FIG. 1 An embodiment of a bonding ridge height measuring device according to the present invention will be described with reference to FIGS. 1 and 2.
  • FIG. 1 and FIG. 2 show the structure and operation of the embodiment, respectively.
  • FIG. 1 (a) 21 is a bonding wire height measuring device
  • 22 is a laser beam generator
  • 23 is an IC chip
  • 24 is an IC chip.
  • I is a lead frame and 25 is a bonding wire.
  • This laser generator 22 outputs a laser beam 22 k.
  • Fig. 1 (b) shows the inside of a measuring instrument 28 that measures the height by receiving S light of the laser beam 22k output from the laser generator 22. I have.
  • 22a is a semiconductor laser
  • 22b and 22c are half mirrors-A
  • B 22d are light receiving elements
  • 22e is a pinhole
  • 22f is a collimator.
  • 22 g is the objective lens
  • 22 h is the laser focus mechanism
  • the objective lens 22g is driven so as to move up and down by 2p force.
  • 22n is a CCD force camera that captures the reflected laser light 22k of the spot 22p and captures 2k. Transfer to 9.
  • the measuring device 28 is configured by this mechanism.
  • the laser generator 22 and the measuring device 28 are connected to X,
  • Bonding wire height that is integrally mounted on the Y table and is driven on a bonding wire 25 mounted on a jig below the laser generator 22
  • the measuring device 21 is configured.
  • the X and Y tables 26 on which the laser light generator 22 and the measuring device 28 are integrally mounted are controlled by the controller 27 to control the path of the IC chip 23 around the periphery. Etc. are command driven.
  • the path of the path depends on the height of the relationship between the IC chip 23 and the lead frame 24, etc. It is also possible to draw a trajectory, and in any case, pass the main part as the height of the bonding wire 25 from the virtual plane of the IC chip 23 so that it can be grasped. Controlling.
  • the four outputs (laser ON, hold, offset, and peak) of the laser light generator 22a are linked.
  • the set and the analog output by the laser focus mechanism 22h are transferred to the measuring device 28, where the coordinate data and the match transferred from the control device 27 are transferred. And transfer it to arithmetic unit 29.
  • the processed data is the peak hole of the position of the bonding wire 25 (taken as an interval) and the height. Displays the data display and numerical data display. Also, a part of the processing data is fed back from the arithmetic unit 29, and a command to repeat the measurement operation is further transferred.
  • the arithmetic unit 29 can determine whether the measured data is good or bad based on the input standard value, and can output a “removal” command for a defective product. It is.
  • the laser focus mechanism 22h is a spot 22p of the laser beam 22k output from the semiconductor laser 22a. Is reflected on the surface of the IC chip 23, which is the object to be measured, and returns to the light receiving element (the laser beam is shown by a solid line).
  • the spot 22p where the laser beam 22k hit the bonding wire 25 is located higher than the surface of the IC chip 23. Since the reflected light of the spot 22p does not return to the light receiving element 22d until then, the objective lens 22g is driven to reflect the spot 22p.
  • the drive amount of this objective lens 22 g can be used as a height for measurement.Note that the above-described embodiment 1 is performed under the following setting conditions. As a result of the experiment, extremely accurate measurement values were obtained.
  • the bonding wire height measuring device By using the bonding wire height measuring device according to the present invention, the force at which the bonding wire height and the interval are within the proper range can be obtained immediately. You can check.
  • the defective product does not flow out to the next process, and immediate measures can be taken by collating with the database of the cause of the defect. Therefore, the number of defects can be reduced.

Abstract

An apparatus (21) for measuring the height of a bonding wire is provided in a position above bonding wires (25) with a laser beam generator (22) having a laser beam focusing mechanism (22h), and a laser beam (22k) outputted from this laser beam generator (22) is reflected upon the bonding wires, objects to be measured, the reflected laser beam (22k) being received to determine the height of the bonding wires (25).

Description

明細書 - 発明の名称 ボ ンデ ィ ン グワ イ ヤ高さ測定装置 発明の詳細な説明  Description-Title of the invention Bonding wire height measuring device Detailed description of the invention
産業上の利用分野  Industrial applications
こ の発明は、 I C チ ッ プと リ ー ドフ レー ム と の間を結線した、 ボ ンデ ィ ン グワ イ ャの高さを測定する高さ測定装置に関する も のであ る 従来の技術  The present invention relates to a height measuring device for measuring the height of a bonding wire, which is connected between an IC chip and a lead frame.
従来、 こ の種の も の と しては、 例えば図 3 に示すよ う に リ ー ド フ レーム上に接着剤で接着された I C チ ッ プと、 電極外部とを結ぶ リ 一ド フ レー ム と を結線する、 いわゆ る ワ イ ャ ボ ンデ ィ ン グがあ る。 こ れは、 生産に入る前の試作時点において、 生産用の ワ イ ヤ ボ ンデ イ ン グ装置を使用 して、 何度もボ ンデ ィ ン グワ イ ヤ を結線し、 そ の ボ ンディ ン グ状態を拡大鏡や顕微鏡等を使用 して目視検査を してい る 0 Conventionally, as this type of device, for example, as shown in FIG. 3, a lead frame connecting an IC chip bonded on a lead frame with an adhesive and the outside of the electrode is used. There is a so-called wire-bonding that connects the system and the system. This means that, at the time of prototyping before entering production, wire bonding wires are connected many times using a wire bonding device for production, and the bond wires are connected. the in g state using a magnifying glass or a microscope that has a visual inspection 0
そ して、 こ の試作されたボ ンデ ィ ン グワ イ ヤ の高低や変形等の欠 陥の有無を目視判断 して、 適正に製作でき る状態にな っ た時点で、 生産に入る こ と が一般に行なわれている。 発明が解決 しょ う とする課題  The prototype bonding wire is visually judged for any defects such as height and deformation, and when it is in a state where it can be manufactured properly, production is started. And are commonly practiced. Problems to be solved by the invention
しか しながら、 前記ボ ンデ ィ ン グワ イ ヤを結線した後ボ ンデ ィ ン グ状態を目視検査する方法は、 ボ ンデ ィ ン グワ イ ヤ と の融着部であ る ボー ルの大き さやク レ セ ン 卜 の形状ゃヮ ィ ャ間隔を平面で見る の が主体で、 三次元的にボ ンデ ィ ン グ ワ イ ヤ の高低の良否を数十 / / m の単位で目視検査する の は難しい。 However, the method of visually inspecting the bonding state after connecting the above-mentioned bonding wire is based on the method of bonding the bonding wire to the bonding wire. The main purpose is to see the size and shape of the coolant and the distance between the keys in a plane, and to determine the quality of the bonding wire in a three-dimensional manner. It is difficult to perform a visual inspection in units of.
そ して、 結線されたボ ン デ ィ ン グ ワ イ ヤ が不適正な形状や間隔だ と、 次工程の封止成形時に、 ボ ンデ ィ ン ワ イ ヤが樹脂封子部か ら飛 び出 した り、 変形して絡み短絡した り、 I C チ ッ プ 6 と接触 した り して不良の主な原因になる と い う課題を有 していた。  If the connected bonding wires have an incorrect shape or spacing, the bonding wires will fly out of the resin seal during the encapsulation in the next process. However, there is a problem that the main cause of the defect is that it is protruded, deformed, entangled and short-circuited, or comes into contact with the IC chip 6.
こ の発明は、 前記従来技術の課題を解決するため、 I C チ ッ プと リ ー ドフ レ ー ム と を結ぶボ ン デ ィ ン グ ワ イ ヤ高さを測定 して、 不良 の選別を図る ボ ンディ ン グヮ ィ ャ高さ測定装置を提供する こ と を 目 的とする。 課題を解決するため の手段  According to the present invention, in order to solve the above-mentioned problem of the prior art, the height of a bonding wire connecting an IC chip and a lead frame is measured to select a defect. An object of the present invention is to provide a bonding height measuring device. Means to solve the problem
こ の発明は前記目的を達成するため、 被測定物であ る ボ ン デ ィ ン グヮ ィ ャの上方の位置に レーザフ ォ 一 力 ス機構を有する レーザ光発 生装置を設け、 こ の レーザ光発生装置よ り 出力された レーザ光は、 被測定物であ る ボ ン デ ィ ン グ ワ イ ヤ に よ り反射され、 こ の反射さ れ た レーザ光を受光してボ ン デ ィ ン グ ワ イ ヤ の高さを算出する こ と を 特徴と している。 作用  In order to achieve the above object, the present invention provides a laser light generating device having a laser force mechanism at a position above a bonding object as an object to be measured. The laser beam output from the generator is reflected by a bonding wire, which is an object to be measured, and the reflected laser beam is received to bond the laser beam. The feature is to calculate the height of the wire. Action
こ の発明は、 前記構成によ り、 I C チ ッ プ面からの反射 レーザ光 を捉える こ とができ る ので、 I C チ ッ プ面よ り上方にあ る ボ ンデ ィ ン グ ワ イ ヤ の高さ と間隔 （高さの無い と こ ろ が間隔と見なせる） と を随時測定し算出する こ とができ る。 図面の簡単な説明 ( a ) は、 ワ イ ヤボ ンディ ン グ高さ測定を示す斜視図である。 ( b ) は、 レーザ光によ る高さ測定を示す説明図であ る。 According to the present invention, with the above configuration, the reflected laser light from the IC chip surface can be captured, so that the bonding wire above the IC chip surface is provided. Can be measured and calculated at any time. BRIEF DESCRIPTION OF THE FIGURES (a) is a perspective view which shows a wire bonding height measurement. (b) is explanatory drawing which shows height measurement by a laser beam.
図 2  Figure 2
こ の発明に係る ボ ン デ ィ ン グ ワ イ ヤ高さ測定装置のプ ロ ッ ク 図で あ る。  FIG. 2 is a block diagram of the bonding wire height measuring device according to the present invention.
図 3  Fig. 3
従来技術に係る ヮ ィ ャボ ンディ ング状態を示す平面図である。 実施例  FIG. 9 is a plan view showing a bonding state according to the related art. Example
この発明に係る ボ ン デ ィ ン グ ヮ ィ ャ高さ測定装置の実施例を図 1 及び図 2 に基づいて説明する。  An embodiment of a bonding ridge height measuring device according to the present invention will be described with reference to FIGS. 1 and 2. FIG.
図 1 及び図 2 は、 それぞれ実施の形態の構造及び作用を示す も の である。  FIG. 1 and FIG. 2 show the structure and operation of the embodiment, respectively.
まず構成を説明する と、 図 1 ( a ) にお いて、 2 1 はボ ン デ ィ ン グワ イ ヤ高さ測定装置、 2 2 は レーザ光発生装置、 2 3 は I C チ ッ プ、 2 4 は リ ー ド フ レー ム、 2 5 は ボ ン デ ィ ン グ ワ イ ヤ である。 こ の レーザ発生装置 2 2 か ら は レーザ光 2 2 k が出力されている。 ま た、 図 1 ( b ) は、 レーザ発生装置 2 2 よ り 出力された レーザ 光 2 2 k の S射 . 受光によ り高さ の測定を行な う 測定器 2 8 内を示 している。  First, the configuration will be described. In FIG. 1 (a), 21 is a bonding wire height measuring device, 22 is a laser beam generator, 23 is an IC chip, and 24 is an IC chip. Is a lead frame and 25 is a bonding wire. This laser generator 22 outputs a laser beam 22 k. Fig. 1 (b) shows the inside of a measuring instrument 28 that measures the height by receiving S light of the laser beam 22k output from the laser generator 22. I have.
すなわち、 2 2 a は半導体 レーザ、 2 2 b, 2 2 c はハ ー フ ミ ラ - A, B、 2 2 d は受光素子、 2 2 e は ピ ン ホ ー ル、 2 2 f は コ リ メ ー ト レ ン ズ、 2 2 g は対物レ ン ズ、 2 2 h は レ ー ザ フ ォ ー カ ス機 構で被対象物の高低に合わせて レーザ光 2 2 k のス ポ ッ ト 2 2 p 力' 上下する よ う に対物レ ン ズ 2 2 g を駆動させる、 2 2 n は C C D 力 メ ラ で ス ポ ッ ト 2 2 p の反射レーザ光 2 2 k を取り込み演算装置 2 9 に転送する。 こ の機構で測定器 2 8 を構成 している。 That is, 22a is a semiconductor laser, 22b and 22c are half mirrors-A, B, 22d are light receiving elements, 22e is a pinhole, and 22f is a collimator. 22 g is the objective lens, 22 h is the laser focus mechanism, and the laser beam 22 k spots 2 according to the height of the object The objective lens 22g is driven so as to move up and down by 2p force. 22n is a CCD force camera that captures the reflected laser light 22k of the spot 22p and captures 2k. Transfer to 9. The measuring device 28 is configured by this mechanism.
そ して、 こ の レーザ発生装置 2 2 と測定器 2 8 は図示省略の X , The laser generator 22 and the measuring device 28 are connected to X,
Yテー ブルに一体に装着されお り、 レーザ発生装置 2 2 の下方に治 具設置されたボ ンデ ィ ン グワ イ ヤ 2 5 上を駆動される ボ ンデ ィ ン グ ヮ ィ ャ高さ測定装置 2 1 が構成されている。 Bonding wire height that is integrally mounted on the Y table and is driven on a bonding wire 25 mounted on a jig below the laser generator 22 The measuring device 21 is configured.
次に、 図 2 に よ り ボ ンデ ィ ン グワ イ ヤ高さ測定装置 2 1 の機能に ついて説明する。  Next, the function of the bonding wire height measuring device 21 will be described with reference to FIG.
レーザ光発生装置 2 2 と測定器 2 8 とを一体に装着 した X， Y テ — ブル 2 6 は制御装置 2 7 によ り I C チ ッ プ 2 3 周縁部のパ ス軌道 ゃ ス ピ一 ド等が指令駆動される。 こ のパ ス軌道は I C チ ッ プ 2 3 と リ ー ド フ レ ー ム 2 4 との関係高さ等によ り、 I C チ ッ プ 2 3 周縁部 を何回周回させて も、 曲線パ ス軌道を描かせて もよ く、 いずれも I C チ ッ プ 2 3 の仮想平面からのボ ンデ ィ ン グワ イ ヤ 2 5 高さ と して 主要箇所をパ ス して捉え られる よ う に制御 している。  The X and Y tables 26 on which the laser light generator 22 and the measuring device 28 are integrally mounted are controlled by the controller 27 to control the path of the IC chip 23 around the periphery. Etc. are command driven. The path of the path depends on the height of the relationship between the IC chip 23 and the lead frame 24, etc. It is also possible to draw a trajectory, and in any case, pass the main part as the height of the bonding wire 25 from the virtual plane of the IC chip 23 so that it can be grasped. Controlling.
ま た、 こ の X , Y テー ブル 2 6 の駆動に リ ン ク して、 レーザ光発 生装置 2 2 a の 4 出力 （ レーザ O N， ホ ー ル ド， オ フ セ ッ ト， ピ 一 ク セ ッ ト ） と レーザフ ォ ー カ ス機構 2 2 h作動によ る ア ナ ロ グ出力 は測定器 2 8 に転送され、 制御装置 2 7 か ら転送されてきた座標デ 一夕 と マ ッ チ ン グさせながら演算装置 2 9 に転送する。  Also, by linking the drive of the X and Y tables 26, the four outputs (laser ON, hold, offset, and peak) of the laser light generator 22a are linked. The set and the analog output by the laser focus mechanism 22h are transferred to the measuring device 28, where the coordinate data and the match transferred from the control device 27 are transferred. And transfer it to arithmetic unit 29.
そ して、 処理されたデータ は出力表示例 2 9 a に示すよ う に、 ボ ンデ イ ン グワ イ ヤ 2 5 の位置 （間隔と して捉え る） や高さ の ピー ク ホ ー ル ド表示や数値データ表示等を表示する。 ま た、 こ の演算装置 2 9 からは処理データ の一部をフ ィ ー ドバ ッ ク して、 更に測定動作 を繰り返す指令を転送する。  Then, as shown in the output display example 29a, the processed data is the peak hole of the position of the bonding wire 25 (taken as an interval) and the height. Displays the data display and numerical data display. Also, a part of the processing data is fed back from the arithmetic unit 29, and a command to repeat the measurement operation is further transferred.
ま た、 演算装置 2 9 では、 入力されてい る規格値か ら測定デー タ の良否判定を行い、 不良品の 「除去」 指令等も出力でき るのは勿論 であ る。 In addition, the arithmetic unit 29 can determine whether the measured data is good or bad based on the input standard value, and can output a “removal” command for a defective product. It is.
こ こ で、 レーザフ ォ ー カ ス機構 2 2 h と は、 図 1 ( b ) に示すよ う に、 半導体レーザ 2 2 a から出力さ れた レーザ光 2 2 k の ス ポ ッ ト 2 2 p が被測定物である I C チ ッ プ 2 3 の表面で反射し受光素子 へ戻る （ レーザ光を実線で示 している） 。  Here, as shown in FIG. 1 (b), the laser focus mechanism 22h is a spot 22p of the laser beam 22k output from the semiconductor laser 22a. Is reflected on the surface of the IC chip 23, which is the object to be measured, and returns to the light receiving element (the laser beam is shown by a solid line).
そ して次に、 レーザ光 2 2 k がボ ン デ ィ ン グワ イ ヤ 2 5 に当 っ た ス ポ ッ ト 2 2 p の位置は I C チ ッ プ 2 3 表面よ り も高い位置にあ り、 そのま ま ではス ポ ッ ト 2 2 p の反射光は受光素子 2 2 d へは戻ら な い の で、 対物レ ン ズ 2 2 g を駆動さ せ ス ポ ッ ト 2 2 ρ の反射光 （ レ 一ザ光を破線で示 している） がピ ン ホ ー ル 2 2 e を通過 して受光素 子へ戻る よ う に した対物レ ン ズ 2 2 g の駆動機構を云う。 よ っ て、 こ の対物レ ン ズ 2 2 g の駆動量を高さ と し て測定に使う こ と がで き る なお、 以上に示 した 1 実施例を、 以下のよ う な設定条件で実験 し た結果、 極めて精度のよい測定値が得 られた。  Next, the spot 22p where the laser beam 22k hit the bonding wire 25 is located higher than the surface of the IC chip 23. Since the reflected light of the spot 22p does not return to the light receiving element 22d until then, the objective lens 22g is driven to reflect the spot 22p. This means the drive mechanism of the objective lens 22g that allows light (the laser light is indicated by a broken line) to pass through the pinhole 22e and return to the light receiving element. Thus, the drive amount of this objective lens 22 g can be used as a height for measurement.Note that the above-described embodiment 1 is performed under the following setting conditions. As a result of the experiment, extremely accurate measurement values were obtained.
レーザ光発生装置関係 ：  Laser light generators:
* レ ー ザ ス ポ ッ ト径 ： φ 2 . 0 n m  * Laser spot diameter: φ 2.0 nm
*測定範囲 ： 土 0 . 3 m m  * Measuring range: Soil 0.3 mm
*作動距離 ： 5 m m  * Working distance: 5 mm
*応答時間 ： 2 . 2 m s  * Response time: 2.2 ms
測定関係 ：  Measurement relation:
* X , Y テ ー ブル駆動ス ピー ド ： 3 ~ 5 m m / s * X, Y table drive speed: 3 to 5 mm / s
*表示 = ピー ク、 ピー ク ホー ル ド、 デ ジタ ル ' デー タ 規格値 （ ボ ン デ ィ ン グ ワ イ ヤ高さ ： ^ m ) * Indication = Peak, peak hold, digital 'data standard value (bonding wire height: ^ m)
* 2 0 0 ± 5 % 発明の効果 * 2 0 0 ± 5% The invention's effect
こ の発明に係る ボ ンデ ィ ン グワ イ ャ高さ測定装置を使用する こ と によ り、 各ボ ン デ ィ ン グワ イ ヤ高さや間隔が適正域に入っている力、 直ち に確認でき る。  By using the bonding wire height measuring device according to the present invention, the force at which the bonding wire height and the interval are within the proper range can be obtained immediately. You can check.
こ の良否の判定によ り不良品を次工程に流出させる こ とな く、 不 良原因のデー タ べ一 ス と照合 して早急な対策が打てる。 したがっ て、 不良の低減が図れる。  Based on this quality judgment, the defective product does not flow out to the next process, and immediate measures can be taken by collating with the database of the cause of the defect. Therefore, the number of defects can be reduced.

Claims

請求の範囲 The scope of the claims
1 . I C チ ッ プ上面に溶着されたボ ンディ ン グワ イ ヤ力'、 上方へ 向かって延び湾曲 して山な り に リ ー ドフ レ ー ム面まで下がる構造物 において、 1. Bonding wire force 'welded to the top surface of the IC chip. In a structure that extends upward, curves, and goes down to the top of the lead frame,
前記ボ ンディ ン グワ イ ヤの高さが測れる よ う に、 被測定物であ る 前記ボ ン デ ィ ン グ ワ イ ヤ の上方の位置に レーザフ ォ ー カ ス機構を有 する レーザ光発生装置を設け、 該レーザ光発生装置よ り 出力された レーザ光は被測定物であ る ボ ンディ ン グワ イ ヤによ り反射され、 反 射された該 レーザ光を受光してボ ン デ ィ ン グ ワ イ ャ の高さ を算出す る こ と を特徴とす る ボ ン デ ィ ン グ ワ イ ャ高 さ測定装置。  A laser light generator having a laser focus mechanism at a position above the bonding wire as an object to be measured so that the height of the bonding wire can be measured. The laser beam output from the laser beam generator is reflected by a bonding wire, which is an object to be measured, and the reflected laser beam is received to form a bond. A bonding wire height measuring device for calculating the height of a wire wire.
2 . 前記レーザ光の反射 ' 受光によ り、 前記 I C チ ッ プ上面の角 部の少な く と も三箇所を測定 し前記 I Cチ ッ プの仮想平面を算出す る と共に、  2. By reflecting and receiving the laser light, at least three corners of the upper surface of the IC chip are measured, and a virtual plane of the IC chip is calculated.
前記レーザ光が前記 I C チ ッ プ外周に沿う よ う に前記 X， Y テー ブルを駆動させる こ とを特徴とする請求項 1 に記載のボ ン デ ィ ン グ ヮ ィ ャ高さ測定装置。  2. The bonding ridge height measuring device according to claim 1, wherein the laser beam drives the X and Y tables so as to follow the outer periphery of the IC chip.
3 . 前記 X , Y テー ブ ルの動作機能と座標データ と を指令する制 御装置、 レーザフ ォ ー カ ス量によ る アナ ロ グ出力と座標データ と を 対応させる測定器及び演算表示機能を有する演算装置を設けた こ と を特徴とする請求項 1 又は 2 に記載のボ ン デ ィ ン グ ワ イ ヤ高さ測定 装置。 補正書の請求の範囲 _ 3. A control device for instructing the operation functions of the X and Y tables and the coordinate data, a measuring instrument for associating the analog output with the laser focus amount with the coordinate data, and a calculation display function. The bonding wire height measuring device according to claim 1 or 2, further comprising an arithmetic device having the same. Claims of amendment _
[1 997年 8月 1 2日 （1 2. 08. 97) 国際事務局受理：出願当初の請求の 範囲 1—3は補正された請求の範囲 1—3に置き換えられた。 （1頁） ] [1/12/97 (1 2. 08.97) Accepted by the International Bureau: Claims 1-3 originally filed have been replaced by amended claims 1-3. (1 page)]
1. (捕正後） I Cチップ上面に溶着されたボンディングワイヤが、 上方へ向かつ て延び湾曲して山なりにリードフレーム面まで下がる構造物において、 1. (After capture) In a structure where the bonding wire welded to the top surface of the IC chip extends upward and curves down to the lead frame surface
この構造物を X, Yテーブルに搭載し、 その上方の位置にレーザ光発生装置を設 け、 このレーザ光発生装置より出力されたレーザ光を、 上下動している対物レンズ を通してボンディングワイヤに照射し、 このボンディングワイヤから反射された反 射光のうち、 焦点が合って反射された反射光だけをピンホールを通して受光し、 こ の受光した時の対物レンズの位置を検出し、 この対物レンズの位置からボンディン グワイヤ高さを算出することを特徴とするボンディングワイヤ高さ測定装置。  This structure is mounted on an X, Y table, and a laser beam generator is installed above the table. The laser beam output from this laser beam generator is irradiated on the bonding wire through the vertically moving objective lens. Then, of the reflected light reflected from the bonding wire, only the focused and reflected light is received through the pinhole, and the position of the objective lens at the time of receiving the light is detected, and the position of the objective lens is detected. A bonding wire height measuring device, which calculates a bonding wire height from the data.
2. (補正後） 前記レーザ光の照射 .受光により、 前記 I Cチップ上面の三筒所の 高さを測定し仮想平面を算出すると共に、 2. (After correction) Irradiation of the laser beam. By receiving light, measure the height of the three cylinders on the top surface of the IC chip, calculate the virtual plane, and
前記レーザ光が前記 I Cチップ上面に溶着されたボンディングワイヤに交差し、 このボンディングワイヤの所定の位置の高さが前記仮想平面から測定できるように 前記 X, Yテーブルを駆動させるようにしたことを特徴とする請求項 1に記載のボ ンディングワイヤ高さ測定装置。  The laser beam intersects with the bonding wire welded to the upper surface of the IC chip, and the X, Y table is driven so that the height of a predetermined position of the bonding wire can be measured from the virtual plane. 2. The bonding wire height measuring device according to claim 1, wherein:
3. (捕正後） 前記 X, Yテ一ブルの動作機能と座標データとを指令する制御装置、 前記ボンディングワイヤの高さ測定情報のアナログ出力と座標データとを対応させ る測定器及び演算表示機能を有する演算装置を設けたことを特徴とする請求項 1又 は 2のどちらかに記載のボンディングワイヤ高さ測定装置。 3. (After correction) A control device for instructing the operation function of the X, Y table and coordinate data, a measuring device for associating the analog output of the height measurement information of the bonding wire with the coordinate data, and an arithmetic operation 3. The bonding wire height measuring device according to claim 1, further comprising an arithmetic device having a display function.
-8- 铺正された用紙 (条約第 19条) -8- 用紙 Corrected paper (Article 19 of the Convention)
PCT/JP1997/000801 1995-09-14 1997-03-13 Apparatus for measuring height of bonding wire WO1998040695A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7236887A JPH0982740A (en) 1995-09-14 1995-09-14 Height measuring device of bonding wire
PCT/JP1997/000801 WO1998040695A1 (en) 1995-09-14 1997-03-13 Apparatus for measuring height of bonding wire
US09/519,354 US6590670B1 (en) 1997-03-13 2000-03-06 Method and apparatus for measuring heights of test parts of object to be measured

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7236887A JPH0982740A (en) 1995-09-14 1995-09-14 Height measuring device of bonding wire
PCT/JP1997/000801 WO1998040695A1 (en) 1995-09-14 1997-03-13 Apparatus for measuring height of bonding wire

Related Child Applications (1)

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US09/519,354 Continuation-In-Part US6590670B1 (en) 1997-03-13 2000-03-06 Method and apparatus for measuring heights of test parts of object to be measured

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JP5200774B2 (en) * 2008-09-03 2013-06-05 トヨタ自動車株式会社 Inspection apparatus and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0415507A (en) * 1990-05-10 1992-01-20 Matsushita Electric Ind Co Ltd Detecting method for floating of lead of electronic parts
JPH04148544A (en) * 1990-10-12 1992-05-21 Toshiba Corp Wire bonding inspector
JPH08334317A (en) * 1995-06-09 1996-12-17 Olympus Optical Co Ltd Measuring microscope

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0415507A (en) * 1990-05-10 1992-01-20 Matsushita Electric Ind Co Ltd Detecting method for floating of lead of electronic parts
JPH04148544A (en) * 1990-10-12 1992-05-21 Toshiba Corp Wire bonding inspector
JPH08334317A (en) * 1995-06-09 1996-12-17 Olympus Optical Co Ltd Measuring microscope

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