JP2001298036A - Methods and devices for measuring height and position of bump, and manufacturing and packaging methods of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a bump height measurement method that can quickly and accurately measure the height of a bump. SOLUTION: In this bump height measurement method for measuring the height of a projection-shaped bump B that is formed on the surface of a substrate W, light is applied to the bump at a specific elevation angle to project the shadow of the bump onto the substrate, the shadow length of the bump is obtained according to shadow region information and image information where the image of the shadow region is picked up, and the height of the bump is obtained according to the shadow length and elevation angle.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bump for measuring the height of projecting bumps formed on the surface of a work, particularly the height of minute bumps formed on a circuit board or an LSI chip at high speed and with high accuracy. The present invention relates to a height measuring method, a bump position measuring method, a bump height measuring device, a bump position measuring device, a semiconductor device manufacturing method, and a semiconductor device mounting method.

[0002]

2. Description of the Related Art As a method for measuring the height of a projection on an object surface, a light section method and a confocal method are generally known. The light-section method irradiates a strip-shaped illumination light obliquely to the surface of a projection, and obtains the height of the projection from the amount of shift of the strip-shaped light generated between the object surface and the surface of the projection when observed from above. . The confocal method focuses light on the surface of an object to be measured in the form of a spot, and uses the fact that the amount of light received through a pinhole at the focal point is maximized. In this method, the height is obtained from the amount of vertical movement when the detection optical system or the workpiece is moved up and down with respect to two projections to search for a focal point. In order to measure a projection having a height of about several hundreds of microns with high accuracy using these height measuring methods, the following measures are required. In the case of the light section method,
The width of the band light is reduced, the band light is irradiated from a low angle, and the resolution for detecting the displacement of the band light is increased.
In the case of the confocal method, the spot light is narrowed down or the resolution of the vertical movement is increased.

[0003]

However, when trying to measure tens of thousands of projections scattered over a wide area in a short time by the above-described height measuring method, the following problems arise. In other words, there has been a problem that highly accurate positioning of the illumination light must be performed one point at a time, and the measurement efficiency is extremely low. Therefore, the present invention provides a bump height measuring method and a bump height measuring apparatus capable of measuring the height of a projecting bump formed on a work surface at high speed and with high accuracy, a method of manufacturing a semiconductor device, and a method of manufacturing a semiconductor device. It is an object of the present invention to provide a method of mounting a device.

[0004]

According to a first aspect of the present invention, there is provided a bump height measuring method for measuring a height of a projecting bump formed on a work surface. In the height measuring method, an illumination step of illuminating a region including a bump formed on the surface of the work at a predetermined elevation angle from at least one direction, and projecting a shadow of the bump on the work, An imaging step of imaging the area on the work that is illuminated with and outputting image information having a shadow of the bump, and extracting a shadow area of the bump from the image information output in the imaging step A shadow extraction step of outputting shadow area information, and a shadow length calculation step of calculating the shadow length of the bump from the shadow area information output in the shadow extraction step and the image information output in the imaging step; this It is characterized in that a height calculation process from the resulting Kagecho and the elevation determining the height of the bump from the length calculation step. According to a second aspect of the present invention, in the bump height measuring method according to the first aspect, the illuminating step is performed individually when illuminating from a plurality of directions. It is characterized by outputting image information. According to a third aspect of the present invention, in the bump height measuring method according to the first aspect, when illuminating from two directions in the illuminating step, the bump-shaped bumps formed on the surface of the workpiece are not removed. It is characterized in that the light is individually illuminated from opposite directions, and the image capturing step also outputs image information for each of the illuminations.

According to a fourth aspect of the present invention, in the bump height measuring method according to the first aspect, when illuminating from one direction in the illumination step, the shadow extraction step is performed in the shadow length calculation step. With reference to the provisional shadow tip position in the shadow area information output from, the original shadow tip position and bump center position are searched from the image information output from the imaging step, and the distance between the two points is defined as the shadow length. It is characterized by doing. According to a fifth aspect of the present invention, in the bump height measuring method according to the first aspect, when illuminating from two directions in the illumination step, the shadow extraction for each illumination is performed in the shadow length calculation step. With reference to the provisional shadow tip position in the shadow area information output from the process, the original shadow tip position is searched from the image information for each illumination output from the imaging step, and the distance between the two points is determined as the shadow length. It is characterized by that. According to a sixth aspect of the present invention, in the bump height measuring method according to the first aspect, in the shadow length calculating step, there is no shadow portion and no shadow in the image information output from the imaging step. The method is characterized in that a threshold value is determined based on the brightness of a pixel in a portion and a shadow tip position is searched. Also,
In a bump height measuring device for measuring the height of a projecting bump formed on a surface of a work, a holding unit for holding and relatively positioning the work, and the bump of the work held by the holding unit An illumination unit that illuminates the region including at least a predetermined angle of elevation from at least one direction and projects the shadow of the bump onto the work, and captures an image of the region on the work that is illuminated by the illumination unit. An image capturing unit that outputs image information having the shadow of the bumps, a shadow extracting unit that extracts the shadow area of the bump from the image information output by the image capturing unit, and outputs shadow area information; A shadow length calculator for calculating the shadow length of the bump from the shadow area information output by the section and the image information output in the imaging step; and a shadow length obtained from the shadow length calculator. The bump from elevation It is characterized in that a height calculation unit for obtaining the height.

[0006] A pre-process for preparing an IC chip in which an IC circuit is formed on a silicon wafer and the IC chip are separated, and these IC chips are mounted on a lead frame.
A step of electrically connecting the respective electrodes of the IC chip and the lead frame by bonding, and encapsulating the IC chip with a molding resin; and A bump forming step of forming a bump on the bonding pad of the IC chip in advance, a measuring step of measuring the height of the bump, and a step of measuring the height of the bump within a predetermined range. And a connection step of electrically connecting the bump and the lead frame, wherein the bump height is measured using the bump height measurement method according to claim 1 as the measurement step. A pre-process for preparing an IC chip in which an IC circuit is formed on a silicon wafer, the IC chip is separated, the IC chips are mounted on a lead frame, and the respective electrodes of the IC chip and the lead frame are bonded to each other. And a post-process in which the IC chip is encapsulated with a mold resin, and the semiconductor device is manufactured by a post-process, wherein the bonding is performed by previously bumping at least one of the IC chip and the tape. Forming a bump, measuring the height of the bump, and, when the bump height measured in the measuring step is within a predetermined range, removing the bump from the IC chip and the tape. A connection step of making electrical connection via a connection line. With up height measurement method is characterized by measuring the bump height.

Further, in a semiconductor device mounting method for mounting a semiconductor device having an integrated circuit in which semiconductor elements are integrated on a printed circuit board via bumps, the method may include the step of forming a bump on at least one of the semiconductor device and the printed circuit board in advance. Forming a bump to be formed, a measuring step of measuring the height of the bump, and, when the bump height measured in the measuring step is within a predetermined range, the semiconductor device and the printed board are separated from the bump by the bump. And a connection step of electrically connecting the bumps via a bump. The method according to claim 1, wherein the bump height is measured using the bump height measurement method according to claim 1. As a result of taking the above-described measures, the following effects are produced. According to the first aspect of the present invention, there is no need to position the workpiece with high accuracy or to improve the resolution of the measuring device. Therefore, the bump height can be easily measured with high speed and high accuracy. According to the second aspect of the invention, a plurality of images are obtained for each bump, that is, the height of the bump can be measured with high accuracy by increasing the amount of information. According to the third aspect of the present invention, the height of the bump can be measured with high accuracy by using two opposing shadows, that is, by increasing the amount of information.

According to the fourth aspect of the present invention, the number of times of imaging is one, and the bump height can be measured at a high speed. According to the fifth aspect of the present invention, the height of the bump can be measured with high accuracy by using two opposing shadows, that is, by increasing the amount of information. According to the sixth aspect of the present invention, the threshold value follows even if the illumination intensity fluctuates in the illumination step, irradiation unevenness, or shading of the imaging lens, and the bump height can be measured with high accuracy. In a bump height measuring method for measuring a height of a bump formed on a work surface, the bump is illuminated from a predetermined direction at a predetermined elevation angle with respect to the work surface, and a shadow of the bump is formed on the work surface. Projecting; imaging the work surface including the shadow; obtaining the principal axis and tip position of the shadow based on image information obtained by the imaging; and setting a predetermined elevation angle with respect to the work surface. A step of illuminating the bump from a direction different from the predetermined direction and not opposite to the predetermined direction, projecting a shadow of the bump on the work surface, and capturing an image of the work surface including the shadow. Determining the principal axis and tip position of the shadow based on the image information obtained by the imaging; and determining the principal axis, the tip position, and the elevation angle based on the determined principal axes, the tip positions, and the elevation angle. A bump height measurement method characterized by comprising the step of have measured the height of the bumps.

Further, in the bump height measuring method for measuring the height of a plurality of bumps arranged on a work surface along a plurality of parallel straight lines, the bump height measuring method may include: Illuminating the bump at a predetermined elevation angle, projecting a shadow of the bump on the work surface, imaging the work surface including the shadow, and based on image information obtained by the imaging. Determining the main axis and tip position of the shadow, and illuminating the bump at a predetermined elevation angle with respect to the work surface from a direction that is not parallel to the straight line and that is not opposite to the direction of the illumination; Projecting the shadow of the bump on the surface of the work, imaging the surface of the work including the shadow, and determining the principal axis and the tip of the shadow based on image information obtained by the imaging. A step of determining the position, the obtained each spindle, wherein a bump height measurement method characterized by based on each tip position and the elevation angle and a step of measuring the height of the bump. Further, the imaging includes:
A step of obtaining multi-valued numerical data based on brightness for each pixel using an image pickup device having a plurality of pixels, wherein the tip position is a waveform and a predetermined threshold obtained by connecting the numerical data. 9. The bump height measuring method according to claim 7, further comprising a step of calculating an intersection of the bump height and obtaining the tip position.

In a bump position measuring method for measuring a position of a bump formed on a work surface, the method includes illuminating the bump from a predetermined direction, and projecting a shadow of the bump on the work surface, and including the shadow. Imaging the surface of the work, obtaining the principal axis of the shadow based on image information obtained by the imaging, and illuminating the bump from a direction different from the predetermined direction and not opposite to the predetermined direction. Projecting the shadow of the bump onto the surface of the work, imaging the surface of the work including the shadow, and obtaining a principal axis of the shadow based on image information obtained by the imaging. Obtaining a point of intersection of the two main axes obtained. In a bump height measuring device for measuring a height of a bump formed on a work surface, the bump is illuminated from a predetermined direction at a predetermined elevation angle with respect to the work surface, and a shadow of the bump is formed on the work surface. Illuminating means for projecting, imaging means for imaging the work surface including the shadow, calculation means for obtaining the main axis and tip position of the shadow based on image information obtained by the imaging, and At a given elevation angle,
An illumination unit that illuminates the bump from a direction different from the predetermined direction and is not opposite to the predetermined direction, and projects a shadow of the bump on the work surface; and an imaging unit that captures an image of the work surface including the shadow. Means for calculating the main axis and tip position of the shadow based on the image information obtained by the imaging; and the main axes determined,
Measuring means for measuring the height of the bump based on each of the tip positions and the elevation angle.

In a bump position measuring device for measuring a position of a bump formed on a work surface, a first illuminating means for illuminating the bump from a predetermined direction and projecting a shadow of the bump on the work surface; First imaging means for imaging the work surface including the shadow, calculation means for calculating the main axis of the shadow based on image information obtained by the imaging, and different from the predetermined direction, and A second illuminating means for illuminating the bumps from directions not opposed to each other and projecting a shadow of the bumps on the work surface;
A second imaging step for imaging the surface of the work including the shadow, a calculating means for determining a main axis of the shadow based on image information obtained by the imaging, and obtaining an intersection of the obtained two main axes. A bump position measuring device comprising: a calculating means. A step of forming a bump by printing a metal paste on a metal sheet; a step of measuring the height of the bump using the bump height measurement method described above; and a step of forming an IC on one surface of the insulating sheet. A step of mounting a chip, and after pressing the other surface of the insulating sheet and the surface on which the bumps are formed, pressurizes, and electrically connects the bumps and the electrode portions of the IC chip through the insulating sheet. And a step of forming a wiring pattern by etching a predetermined portion of the metal sheet.

In a bump height measuring method for measuring a height of a bump formed on a work surface, a step of illuminating the work surface with incident light from a direction substantially perpendicular thereto,
Imaging the illuminated surface of the work, obtaining the position of the bump based on image information obtained by the imaging, illuminating the work surface with light at a predetermined elevation angle, Projecting a shadow on the work surface, imaging the work surface including the shadow, obtaining a tip position of the shadow based on image information obtained by the imaging, and a position of the bump; Obtaining a height of the bump based on the tip position and the elevation angle.

[0013]

(First Embodiment) FIG. 1 is a block diagram showing a configuration of a bump height measuring apparatus 10 according to an embodiment of the present invention, and FIGS. 2 (a) and 2 (b) show bumps. FIGS. 2A and 2B are diagrams illustrating a main part of the height measuring device 10, wherein FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along line AA ′ in FIG. In FIG. 2, W indicates a substrate (work), and B indicates a bump formed on the substrate W in a protruding manner. In addition, XY lines in FIG. 2 indicate horizontal axes orthogonal to each other. The bump height measuring apparatus 10 includes a holding unit 20 that holds the substrate W horizontally and positions the substrate W relatively to a CCD camera 31 described later, and an optical system unit (illumination unit) disposed above the holding unit 20. And an imaging unit) 30 and a control unit 40 for controlling the holding unit 20 and the optical system unit 30. The holding section 20 has an XY table 21 for holding and positioning the substrate W by suction on the upper surface thereof. The optical system unit 30 includes a CC arranged opposite to the XY table 21.
D camera 31, a first basic light source 32 a, which is a parallel illumination light source for illuminating the imaging area of the CCD camera 31,
, A first auxiliary light source 33a, and a second auxiliary light source 33b.

The first basic light source 32a and the second basic light source 3
2b are arranged opposite to each other with the imaging region R of the CCD camera 31 interposed therebetween, and are arranged at positions rotated by 30 degrees with respect to the X axis and at an elevation angle of 30 degrees with respect to the substrate W, respectively. The first preliminary light source 33a and the second preliminary light source 33b are arranged opposite to each other with the imaging region R of the CCD camera 31 interposed therebetween, and are respectively rotated by 30 degrees with respect to the Y axis and with respect to the substrate W. At an elevation of 30 degrees. The control unit 40 includes a CPU 41, an image processing circuit 42 connected to the CPU 41, a display unit 43 such as a CRT for displaying bump height data, and a data storage unit 44 such as a hard disk for storing bump height data.
And The CPU 41 controls the shadow length data L obtained from the image processing circuit 42 and the first basic light source 32.
a, a function of calculating the bump height from the elevation angle of the second basic light source 32b and controlling the holding unit 20, the optical system unit 30, and the image processing circuit 42 according to a program stored in advance as described later. I have. The image processing circuit 42 receives an image signal from the CCD camera 31, that is, an image signal when the first basic light source 32a and the basic light source 32b are turned on alternately. And a function of outputting shadow length data L. The image processing operation will be described later.

In the bump height measuring apparatus 10 configured as described above, the height of the bump B on the surface of the substrate W is measured as follows. The substrate W is, for example, 540 mm × 44
It is a copper foil having a thickness of 0 mm and a thickness of 35 μm. The bump B has a height of 100 to 300 μm and a diameter of 100 to 300 μm, for example.
About 20,000 m-shaped cones are arranged. The substrate W is sucked and held on the XY table 21 of the holding unit 20, and the XY table 21 is added to the view coordinates of the CCD camera 31 based on the view coordinates programmed in advance in the CPU 41.
Position. As shown in FIG. 3 (a), the first basic light source 32a is turned on (right strobe) for a predetermined time by an image synchronization signal (VD), an image is picked up by the CCD camera 31, and binary light is extracted at a predetermined level at which only a shadow can be extracted. Image processing circuit 42
In the image memory M1. FIG. 4A is a schematic diagram of an image stored in the image memory M1. Note that FIG.
In (a), S1 denotes a shadow portion of the bump B, and T1 denotes a portion other than the shadow. Next, as shown in FIG. 3B, the second basic light source 32b is turned on (left strobe) for a predetermined time by the image synchronization signal (VD), and similarly, the CCD camera 31 takes an image to extract only the shadow. The image is binarized at the level, and the image is stored in the image memory M2. FIG. 4B is a schematic diagram of an image stored in the image memory M2. Note that FIG.
In (b), S2 indicates a shadow portion of the bump B, and T2 indicates a portion other than the shadow.

The broken line in FIG. 4 indicates the position of the bump B. Although there are a plurality of bumps B in the field of view of the CCD camera 31, only one bump B will be described here. Next, in the image processing circuit 42, the image memory M
As shown in FIG. 4C, the tip position (x2, y2) of the shadow S1 is determined by circumscribing rectangle processing. Similarly, for the image memory M2, as shown in FIG. 4D, the tip position (x1, y1) of the shadow S2 is obtained by circumscribed rectangle processing. The shadow S1 that is opposite to the tip position (x2, y2) of the shadow S1
In order to determine the height of the bump B from the two tip positions (x1, y1), it is necessary to associate the two coordinates as the shadow of the bump B. First, the corner coordinates and the diagonal coordinates (x2a, y2a) indicating the tip position (x2, y2) of the shadow in the circumscribed rectangle of the shadow S1 are obtained from the image memory M1, and the tip of the shadow in the circumscribed rectangle of the shadow S2 is obtained from the image memory M2. Position (x1, y1)
Are obtained and the coordinates (x1a, y1a) of the diagonal are obtained, and (x2a, y) of the shadow S1 are obtained as shown in FIG.
A circumscribed rectangle having (x1a, y1a) closest to 2a) is defined as a shadow S2. Thus, the two shadows (S1, S2) can be the shadows of the bump B.

Here, the length L of the two opposing shadows of the bump B is the length of a straight line connecting the tip position (x2, y2) of the shadow S1 and the tip position (x1, y1) of the shadow S2. It can be calculated by the formula.

[0018]

(Equation 1) Next, the bump height H is calculated by the following equation from the shadow length L calculated by the equation (1) and the elevation angle θ (30 degrees in this case) of the first basic light source 32a and the second basic light source 32b. . That is, H = (L / 2) × tan θ (2) Although the bump height can be obtained by the above method, the bump top is not always a perfect acute angle. When the bump top is rounded, the corner of the circumscribed rectangle does not become the tip of the shadow as shown in FIG. 5 (FIG. 5B is an enlarged view of the circled portion in FIG. 5A). Therefore, in the above method, an error may occur in the height measurement value. In the above method, the image is binarized with a predetermined value to extract a shadow. However, when the illumination light changes for each imaging, the shadow length also changes if the predetermined binarization level is constant. Furthermore, if the brightness of the copper foil in the field of view differs due to shading of the imaging lens or uneven illumination, the shadow length also changes in the field of view. That is, even if the heights of the bumps scattered in the visual field are the same, the lengths of the shadows are different. Therefore, if the boundary (threshold) between the shadow and the non-shadow changes due to variations in illumination light, shading of the imaging lens, uneven illumination, etc., an error may occur in the height measurement value.

Then, after recognizing the shadows forming the pair of the bumps B by the above method, each captured image is searched one pixel at a time based on the coordinates of the tip of each shadow to find the actual coordinates of the tip of the shadow. The length is defined as the shadow length in the above method (1),
The height is obtained from equation (2). A method for obtaining the length between both ends of the shadow will be described below. (1) Coordinates between the tips of the two shadows (x2,
From y2) and (x1, y1), a new circumscribed rectangle is obtained as shown in FIG. (2) As shown in FIG. 5, the multivalued image in the image memory 2 is searched diagonally from the outside of the diagonal point of the circumscribed rectangle in the direction of the base of the shadow to search for the actual tip of the shadow. (3) In searching for the tip of the shadow, the luminance average value of a predetermined area of a non-shadow part (part of FIG. 7A) and a shadow part (part of FIG. 7B) is obtained, and a maximum value Kmax and a minimum value which determine a threshold value
Do Kmin. (4) The threshold value Kc for determining the tip of the shadow is calculated by the following equation. Kc = (Kmax + Kmin) / 2 ... (3) (5) On the diagonal line of the circumscribed rectangle, a search start point is set outside the rectangle + α, and on the diagonal line that becomes less than the threshold value toward the base of the shadow. Search for a pixel. (6) As shown in FIG. 7, the brightness values of the searched pixel and the immediately preceding pixel are set to Kpn and Kpn-1, and the ratio Hi based on the threshold value is set.
Is calculated by the following equation.

Hi = (Kpn−1−Kc) / (Kpn−1−Kpn) (4) (7) Let the coordinates of the searched pixel be (Xn, Yn), and Is corrected by the following formula, and the sub-pixel edge (Ex, Ey)
Ask for. Ex = Xn + Hi ... (5) Ey = Yn-Hi ... (6) (8) The actual tip position of the other shadow is obtained from the multivalued image in the image memory 1 by the above method. Ask. (9) The height between the actual tip positions of the two shadows is applied to equation (2) to determine the bump height. The above method is an explanation of the bump B. In addition,
Since there are a plurality of bumps in the field of view of the CCD camera 31,
Labeling the shadow image of each bump
The position is compared with the bump position table stored in 41.
Then, the same processing is performed for all the bumps in the visual field, and the height H of each bump is obtained and stored in the data storage unit 44.
Next, the XY table 21 is programmed as previously programmed.
Is operated so that the next area of the substrate W enters the visual field area R of the CCD camera 31, and the same measurement is repeated. [Method of Manufacturing Semiconductor Device and Method of Mounting Semiconductor Device]
Next, a method for manufacturing a semiconductor device according to the present invention will be described.
The method for manufacturing C and LSI will be described as an example.

The manufacturing process of a semiconductor device is roughly divided into
After forming the IC circuit on the silicon wafer and inspecting the IC circuit on the completed wafer, the wafer is cut and only non-defective chips are placed on the lead frame to electrically connect the electrodes on the chip and the lead frame. (Bonding) and sealing with a mold resin to complete a product. The "pre-process" and "post-process" will be further described briefly below by taking an N-type MOS transistor which is a typical device of the LSI as an example. That is, in the “pre-process”, an oxide film and a nitride film are formed on the surface of the silicon wafer, and after these film formation processes, a photoresist is applied and a circuit pattern is baked and patterned by a lithography (exposure) process. After exposure, a development process is performed, and a pattern is processed by an etching process. The resist is peeled off after the etching, and impurities are removed after the cleaning. After cleaning, an oxide film is formed, followed by etching, after cleaning, a gate insulating film is grown, and a polycrystalline silicon film is grown thereon. Then, a gate electrode pattern is processed on the polycrystalline silicon film by a lithography process, and then impurities are introduced to deposit an interlayer insulating film, and a contact hole for extracting an electrode is opened in the insulating film. After that, a metal film to be a wiring is deposited, and the metal film is processed by lithography to form a wiring pattern. Thereafter, a protective film is formed on the entire surface of the wafer, and an opening for leading an external electrode is formed by lithography.

The above-described steps of resist coating, pattern exposure, etching, and resist stripping are repeated to determine and stack a plurality of layers of IC structures. Thereafter, a G / W (Goodchip / Wafer) process for determining the quality of each chip formed on the wafer is performed. After this G / W check, the process proceeds to the next “post-process”. That is,
A dicing process is performed in which the wafer that has been made up to the circuit pattern in the "pre-process" is cut into one chip by a cutter, and one chip determined as a non-defective IC chip in the G / W process is used as a lead frame island. Mount on top. Thereafter, the electrode pads of the chip and the leads of the lead frame are electrically connected by a bonding process. After the electrical connection, the lead frame on which the chip is mounted is sealed with a mold resin. Finally, ICs are cut off from the lead frame one by one to form leads, which are subjected to various inspections and passed, and are shipped as products. The step related to the bump height measurement according to the present invention is, for example, a “wireless bonding” step in which bonding is performed by using a bump. This wireless bonding method further includes a flip chip method (a mounting method in which a chip is turned upside down and attached). And a TAB method (a mounting method of attaching an IC chip on a tape film).

In the flip chip method, bumps B (solder bumps or gold bumps) are previously formed on the bonding pads 51 of the IC chip 50 as shown in FIG.
After the alignment of the arrangement of the bump B and the lead 52 and the height tick of the bump are performed by the bump height measuring method of the present invention, connection is made by using solder reflow by heat or ultrasonic vibration in a pressurized state. Things. Next, in the TAB method, bumps are formed on an IC chip or a tape, and the bumps are bonded and connected to each other by inner lead bonding. The bump height tic according to the bump height measuring method of the present invention is to perform a bonding step when the measured bump height falls within a range of a predetermined reference bump height. . When the bump height deviates from the reference bump height range, a separate correction process may be performed, and bonding may be performed after the bump height is corrected to be within a predetermined range. Note that the steps related to the bump height measuring method of the present invention are not limited to the method of manufacturing a semiconductor device (LSI, IC). Similarly, the bump height measuring method of the present invention can be applied to a mounting method of a semiconductor device in which the bump height is measured.

(Second Embodiment) FIG. 9 is a block diagram showing a functional configuration of a bump height measuring device 60 according to an embodiment of the present invention. FIGS. 10A and 10B are diagrams showing a main part of the bump height measuring device 60, wherein FIG. 10A is a plan view and FIG.
FIG. 2 is a sectional view taken along line AA ′ in FIG. In FIG. 10, W indicates a substrate (work), and B indicates a bump formed on the substrate W. Also, in FIG.
Y indicates horizontal axes orthogonal to each other. The bump height measuring device 60 holds a substrate W horizontally and positions the substrate W relatively with respect to a CCD camera 68 described later, and an optical system unit 64 (above the holding unit 62). An illumination unit and an imaging unit), and a control unit 70 that controls the holding unit 62 and the optical system unit 64. The holding section 62 has an XY table 72 for holding and positioning the substrate W by suction on the upper surface thereof. The optical system unit 64 includes a CCD camera 68 arranged so that an imaging surface faces the XY table 72, and a CCD camera 68.
A first basic light source 66a and a second basic light source 66b, which are parallel illumination light sources that illuminate an imaging area of the camera 68, are provided. The first basic light source 66a and the second basic light source 66b are disposed at positions rotated by 30 degrees with respect to the X axis and the Y axis, respectively, and illuminated with light at an elevation angle of 30 degrees with respect to the substrate W. Have been.

The control unit 70 includes an arithmetic circuit 78, an image processing circuit 76 connected to the arithmetic circuit 78, a display unit 80 such as a CRT for displaying bump height data, and a hard disk or the like for storing bump height data. And a storage unit 82. The image processing circuit 76 has a function of performing image processing calculation on image information output from the CCD camera 68 to extract a shadow, and outputting data of the length of the shadow to the calculation circuit 78. The image processing operation will be described later. Arithmetic circuit 78
Is the shadow length data L output from the image processing circuit 76
In addition to calculating the bump height based on the elevation angles illuminated by the first basic light source 66a and the second basic light source 66b, the holding unit 62, the optical system unit 64, and the image processing circuit are stored in accordance with a program stored in advance. 76 has a function of controlling as described later. The bump height measuring device 60 configured as above measures the height of the bump formed on the surface of the substrate W in the following procedure.
The substrate W has a thickness of, for example, 540 mm × 440 mm and a thickness of 3 mm.
This is a 5 μm copper foil. On the surface of the substrate W, about 20,000 conical bumps having a height of about 200 μm and a diameter of about 200 μm are formed along a plurality of substantially parallel straight lines at a pitch of about 400 μm.

First, the substrate W is sucked and held on the XY table 72 of the holding section 62. Here, the suction and holding are performed such that the linear direction in which the bumps B are formed and the Y direction substantially match.
Then, based on the visual field coordinates stored in the data storage unit 82, the XY table 72 is positioned so that a predetermined area of the substrate W is imaged by the CCD camera 68. The imaging region is, for example, a region in which a total of 25 bumps B of 5 × 5 are imaged. Hereinafter, description will be given focusing on one bump. Next, an image is taken by the CCD camera 68 in a state where only the first basic light source 66a is turned on (right strobe) for a predetermined time. The image information obtained by the CCD camera 68 is binarized by a predetermined threshold value set so that only the shadow can be suitably extracted, and stored in an image memory M1 (not shown) in the image processing circuit 76. FIG. 11A is a diagram schematically showing an image stored in the image memory M1. In FIG. 11A, S1 indicates a shadow portion of the bump B, and T1 indicates a portion other than the shadow. The dotted line indicates the position of the bump B. Next, the first basic light source 66a is turned off,
The second basic light source 66b is turned on, and the same region is imaged. Similarly, after being binarized to extract a shadow, it is stored in the image memory M2. FIG. 11B is a diagram schematically showing the stored image. In FIG. 11B, S2 indicates a shadow portion of the bump B, and T2 indicates a portion other than the shadow.
The dotted line indicates the position of the bump B.

Next, a circumscribed rectangle process is performed by the image processing circuit 76. FIG. 12 is a diagram showing a state in which circumscribed rectangle processing is performed based on image information obtained when the first basic light source 66a is turned on. The circumscribed rectangle process refers to a process of obtaining a tip position of a shadow portion by obtaining a rectangle circumscribing the shadow portion. As shown in FIG. 12A, a rectangle circumscribing the shadow portion S1 is obtained. Here, the rectangle is determined to be parallel to the XY directions. Since the XY direction and the illumination direction are not parallel in this way, the vertex (xs1, ys1) of the circumscribed rectangle can be regarded as the tip position of the shadow. As shown in FIG. 12B, a rectangle circumscribing the shadow portion S2 is also obtained for the image memory M2, and the tip position (xs2, ys) of the shadow is obtained.
2) is required. Since a plurality of bumps B are imaged in the imaging region R, it is necessary to associate the shadow portions S1 and S2 with the same bump B. The association is performed by comparing vertices that are exactly diagonal of the vertices of the rectangle regarded as the tip position of the shadow portion, and the combination having the closest position is associated as the shadow relating to the same bump B. That is, the tip position of the shadow (x
s1, ys1) and diagonal coordinates (xs) with corner coordinates indicating
1a, ys1a). Next, the tip position of the shadow (xs
2, ys2) and diagonal coordinates (xs) with corner coordinates indicating
2, ys2a). And (xs1a, ys1
a) and (xs2a, ys2a) are compared, and the closest combination is associated as a shadow formed for the same bump B. As a result, two shadows (S
1, S2) can be regarded as a shadow of the bump B.

In the image processing circuit 76, the principal axis of inertia K1 of the shadow S1 for the image memory M1 as shown in FIG. 12A and the shadow S2 for the image memory M2 as shown in FIG. Of the principal axis of inertia K2 is determined. Here, the principal axis of inertia is a straight line connecting the tip position of the shadow and the center of gravity of the shadow. In the following, the bump position and the bump height are calculated based on the shadow tip position and the principal axis of inertia thus determined. FIG. 13 is a schematic diagram for explaining the derivation of the bump position and height. In the image processing circuit 76, the coordinates (Bx, B) of the intersection of the principal axes of inertia (K1, K2)
y) is required. The intersection coordinates (Bx, By) are regarded as coordinates indicating the center position of the bump B because the intersection point is the intersection of the principal axes of inertia of the shadow when the same bump B is illuminated from two different directions. Further, the coordinates of the intersection (B
x, By) and the lengths L1, L2 of the line segments connecting the tip positions (xs1, ys1) and (xs2, ys2) of the shadows S1, S2 of the bumps B obtained earlier. Next, the two shadow lengths L1 and L2 and the elevation angles θ of the first basic light source 66a32a and the second basic light source 66b32b (in this case, 30 degrees)
The bump height H is calculated from the following equation. That is, the bump height H is obtained as H = ((L1 + L2) / 2) × tan θ (Equation 1). Similar calculation of the bump height is performed for each bump in the imaging region R of the CCD camera 68. Then, the position coordinates of the bumps previously stored in the storage means (not shown) of the arithmetic circuit 78 are compared with the center coordinates of each bump B obtained as described above, and the bump height is stored for each bump B. Is done. Next, the XY table 7221 is programmed as previously programmed.
Is driven to move the next area of the substrate W into the visual field area R of the CCD camera 68, and the same measurement is repeated.

As described above, the bump height is obtained for all the bumps B on the substrate W. The measurement accuracy cannot be improved unless the shadow formed by the illumination is long to some extent. However, from a direction shifted by 30 degrees from the straight line that is the arrangement direction of the bumps B (that is, a direction that is not parallel to the straight line on which the bumps are arranged). Since the lighting was performed, the tip of the shadow is next to bump B
And measurement accuracy is improved. In particular, when the bumps B have a narrow pitch, the effect is increased. Further, in the first embodiment, since it is necessary to illuminate the bump B from the opposite direction, the measurement accuracy becomes worse as the bump B is further away from the straight line connecting the two illumination positions.
In particular, when a plurality of bumps B are imaged at a time, the measurement accuracy of the bumps B at the end of the imaging area is deteriorated. However, in the present embodiment, since the bump position and the height are measured by obtaining the inertia principal axis of the shadow, even when a plurality of bumps B are imaged, the accuracy is hardly deteriorated. In the present embodiment, the height of the bump is measured. However, when the position of the bump is to be measured, the intersection (Bx, By) of the principal axes of inertia determined in the middle is regarded as the bump position, and the height measurement is performed. No need to do.

In the present embodiment, the bumps have a conical shape, but the bumps may be spherical or other shapes. Further, one lighting unit may be illuminated from a plurality of directions. In this case, to illuminate from different directions, XY
The substrate W may be rotated around the Z axis of the table 72, or the illumination means may be rotated. In such a case, in the first embodiment, it is necessary to illuminate from the opposite direction, so there is a demand for accurate alignment. However, in this embodiment, since the intersection of the principal axes of inertia is obtained, Coarse alignment may be used. Also, a method may be used in which after the position of the bump is determined by illuminating the substrate (work surface) with light in a substantially vertical direction, the bump is illuminated obliquely and the height of the bump is determined from the tip position of the shadow. . That is, if light is illuminated from a direction substantially perpendicular to the substrate,
The portion other than the bump substantially reflects light, whereas the surface of the bump does not reflect light. Therefore, if an image is taken from a direction substantially perpendicular to the substrate using an image pickup means such as a CCD, image data values obtained at the bump portion and at other portions are different. For this reason, for example, binarization is performed at a predetermined threshold value, and it is possible to separate the bump portion (dark portion) from the other portion (light portion), and obtain position information such as the center position of the extracted bump portion. be able to. Then, as shown in the above embodiment, if the light is illuminated obliquely and the tip position of the shadow is obtained, the height of the bump is measured based on the position information of the bump, the tip position of the shadow, and the elevation angle of the illumination. be able to.

The illumination direction is not limited to two directions. For example, four illuminating means are arranged at equal intervals of 90 degrees, and illuminating is performed using two opposing illuminating means to measure the bump height, and then illuminating using two adjacent illuminating means, and the bump height is measured. May be measured. By illuminating from a plurality of directions as described above, it is possible to further improve the measurement accuracy. In addition, even if the tip of the shadow hits an adjacent bump when illuminated from two opposite directions, the tip of the shadow does not hit the bump when illuminated from a direction shifted by 90 degrees. In some cases, good measurements can be made. By illuminating from various directions in this way, it is possible to select an optimal direction such that a shadow does not cast on an adjacent bump. For that purpose, a method of determining the principal axis of the shadow and measuring the bump height or the like based on the determined principal axis is optimal. Note that the present invention can be applied to any axis other than the main axis of inertia as long as the axis is the center of the shadow. Note that the present embodiment is not limited to this, and can be variously modified as shown in the first embodiment.
For example, at the time of imaging, image data is obtained for each pixel not in binary but in multiple values, and a polygon waveform is formed by connecting these image data. If the intersection of the line of intersection of this waveform with a plane forming a predetermined threshold and the principal axis of inertia is the true tip position, the tip position can be detected with higher accuracy. Further, the threshold value may be dynamically set in consideration of the influence of shading or the like as in the first embodiment.

(Third Embodiment) The third embodiment relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device having a structure in which wirings are formed in multiple layers. The outline of the manufacturing process of this semiconductor device will be described below with reference to the drawings. First, bumps 92 are printed on a metal sheet 90. The metal sheet 90 is made of a metal having a low electric resistance such as copper or aluminum, and an electric field copper foil having a thickness of about 10 μm to 40 μm is used. A pyramid-shaped or conical-shaped bump 92 is formed by printing a polymer type silver-based paste on the metal sheet 90. A mask is used for printing. As the mask, a metal mask having a hole having a diameter of several tens of μm or less at a predetermined position of a stainless steel plate having a thickness of 100 μm is used. Thus, the bumps 92 are formed on the metal sheet 90. FIG. 13 is a schematic view showing a state where the metal sheet 90 and the chip component 94 are connected. As the chip component 94, a resistor, a capacitor, or the like is used, and is usually a small size of 1 mm square or less. Such chip parts 94 are sandwiched between the inner surfaces of a pair of synthetic resin sheets 96 (FIG. 13A),
Then, the chip component 94 is positioned between the synthetic resin sheets 96 (FIG. 13B).

After that, the synthetic resin sheet 96 is softened or melted by heating, and the chip parts 94 are embedded in the synthetic resin sheet 96. Note that an insulating sheet such as a thermosetting resin sheet is used as the synthetic resin sheet 96. Desirably, the synthetic resin sheet 96 has a thickness of at least half the thickness of the chip component 94, and when the synthetic resin sheet 96 is heated and softened to embed the chip component 94 in these synthetic resin sheets 96, The chip part 9
4 can be prevented from being exposed to the outside. The surfaces on which the bumps 92 are formed are opposed to the outer surfaces of the pair of synthetic resin sheets 96 and polymerized (FIG. 14).
(A)), this polymer is heated and pressurized (FIG. 14)
(B)). FIG. 14C shows that the bump 92 is heated and pressed.
FIG. 9 is a schematic diagram showing a state in which an electrode 94a of a chip component 94 is connected to the same. When the polymer is pressed, the synthetic resin sheet 96 melts and enters the gap between the chip components 94 to integrate the synthetic resin and the chip component 94, and the bumps 92 are embedded in the substrate body. And is electrically connected to the electrode 94a of the chip component 94. As a result, a base in which the synthetic resin sheet 96 and the metal sheet 90 are integrated is formed.

Next, the metal sheet 90 is patterned to form a wiring pattern 93. For patterning, an etching resist is printed on the metal sheet 90 to perform an etching process, and then the etching resist is peeled off and removed with an alkaline aqueous solution.
Can be formed. Next, an interlayer synthetic resin sheet 97, which is an insulating layer, on both surfaces on which the wiring pattern 93 is formed, and the metal sheet 98, on which interlayer bumps 95 are formed at predetermined positions on the board surface, are sequentially opposed (FIG. 15A).
Next, the interlayer synthetic resin sheet 97 and the metal sheet 98 are polymerized on the substrate body, and the polymer is heated and pressurized (FIG. 15B). As a result, the interlayer synthetic resin sheet 97 is melted and integrated with the substrate main body, and the interlayer bumps 95 enter the interlayer synthetic resin sheet 97 and are electrically connected to the wiring patterns 93 of the substrate main body (FIG. c)). The interlayer bumps 95 are connected to the wiring patterns 9
3 is electrically connected to the upper metal sheet 98.
Is etched to form the upper wiring pattern 99, thereby forming a multilayer wiring board having a four-layer wiring pattern. Thereafter, the semiconductor device is manufactured by mounting the ball grid array package 100 on one of the wiring patterns 93.

In the step of printing the bumps 92 and 95, if the heights of the printed bumps 92 and 95 cannot be as set, the electrical connection between the bumps 92 and 95 and the chip component 94 or the wiring pattern 93 is ensured. , The yield of the semiconductor device is not improved. Therefore, there is a demand to precisely measure the heights of the printed bumps 92 and 95 to eliminate the metal sheet 90 having the bumps 92 and 95 that do not meet the specifications. Therefore, when measuring the heights of the bumps 92 and 95, the heights of the bumps 92 and 95 can be measured with high accuracy by using the method described in the first embodiment or the second embodiment. As a result, the production yield of the semiconductor device can be improved. The present embodiment can be variously modified, and can be applied to the configuration of a general multilayer wiring board having no chip component 94 between layers. In measuring the height and position of the bump, various modifications can be made as shown in other embodiments.

[0036]

According to the present invention, the bump height is determined from the shadow length and the elevation angle of the bump. Once the shadow length of the bump is found from the binary image,
Based on this, the multilevel image is searched pixel by pixel to find the actual shadow tip position. To search for the actual shadow tip position, a threshold is determined from the average brightness value of the shadow portion and the non-shadow portion of the multi-valued image. Further, the sub-pixel edge is obtained from the luminance ratio of the pixels at the positions before and after the search, and is set as the actual shadow tip position. Therefore, there is no need to position the workpiece with high accuracy or to improve the resolution of the measuring device. Therefore, the bump height can be easily measured with high speed and high accuracy. Furthermore, the bump height can be measured with high accuracy without being affected by illumination fluctuation, illumination unevenness, shading of the imaging lens, and the like.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of a bump height measuring device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a main part of the bump height measuring device.

FIG. 3 is a diagram showing operation timing in the bump height measuring device.

FIG. 4 is a diagram showing an example of an image in the bump height measuring device.

FIG. 5 is a view for explaining that a corner of a circumscribed rectangle is not an actual tip position of a bump shadow in the bump height measuring apparatus.

FIG. 6 is an explanatory diagram for obtaining a sub-pixel edge position in the bump height measuring device.

FIG. 7 is a view showing an area for obtaining data for determining a threshold value for searching for a shadow tip position in the bump height measuring apparatus.

FIG. 8 is an explanatory diagram of a semiconductor device on which bumps are mounted.

FIG. 9 is a block diagram showing a configuration of a bump height measuring device according to a second embodiment of the present invention.

FIG. 10 is a diagram showing a main part of the bump height measuring device.

FIG. 11 is a view showing a shadow of a bump in the bump height measuring apparatus.

FIG. 12 is a schematic diagram for obtaining a principal axis of inertia of a shadow in the bump height measuring apparatus.

FIG. 13 is a schematic diagram for finding an intersection of the same inertia main axes.

FIG. 14 is a schematic view showing a state where a metal sheet and a chip component are connected in a manufacturing process of the semiconductor device according to the third embodiment of the present invention.

FIG. 15 is a schematic view showing a state in which bumps and electrodes are connected by the same heat and pressure.

FIG. 16 is a schematic view showing a state in which the semiconductor device is manufactured in a multilayer manner.

[Explanation of symbols]

 Reference Signs List 10 bump height measuring device 20 holding unit 21 XY table 30 optical system unit 31 CCD camera (imaging unit) 32a, 32b basic light source 33a, 33b standby light source 40 control unit 41 CPU 42 image processing circuit 43 display unit 44 data storage unit 66a , 66b Basic light source 68 CCD camera 76 Image processing circuit 78 Arithmetic circuit 92,95 Bump 94 Chip component W board B Bump

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G06T 7/60 150 H01L 21/50 A H01L 21/50 H05K 3/34 512B H05K 3/34 512 H01L 21 / 92 604T

Claims (18)

[Claims] In a bump height measuring method for measuring the height of a bump formed on a work surface, at least one direction at a predetermined elevation angle with respect to a region including the bump formed on the work surface. An illumination step of projecting the shadow of the bump onto the work, and an imaging step of imaging the area on the work illuminated in the illumination step and outputting image information having the shadow of the bump A shadow extraction step of extracting a shadow area of the bump from the image information output in the imaging step and outputting shadow area information; and a step of extracting the shadow area information output in the shadow extraction step and the imaging step. A shadow length calculating step of calculating the shadow length of the bump from the output image information; and a height calculating step of calculating the height of the bump from the shadow length obtained from the shadow length calculating step and the elevation angle. Be prepared A method for measuring bump height. 2. The method according to claim 1, wherein the illuminating step is performed individually when illuminating from a plurality of directions, and the image capturing step also outputs image information for each illumination. Bump height measurement method. 3. When illuminating from two directions in the illuminating step, illuminating is performed individually from a direction opposite to the projecting bumps formed on the surface of the work, and the image capturing step also includes image information for each illumination. 2. The bump height measuring method according to claim 1, wherein the method outputs the height. 4. When illuminating from one direction in the illuminating step, a tentative shadow tip position in the shadow area information output from the shadow extracting step in the shadow length calculating step is used as a reference. 2. A bump height measuring method according to claim 1, wherein the original image tip position and the bump center position are searched from the output image information, and a distance between the two points is set as a shadow length. 5. When illuminating from two directions in the illumination step, the temporary shadow tip position in the shadow area information output from the shadow extraction step for each illumination in the shadow length calculation step is used as a reference. 2. The bump height measuring method according to claim 1, wherein an original shadow tip position is searched from the image information for each illumination output from the imaging step, and a distance between the two points is set as a shadow length. 6. In the shadow length calculating step, a threshold value is determined based on the brightness of pixels of a shadow portion and a work portion having no shadow in the image information output from the imaging step, and a shadow tip position is searched. 2. The method for measuring bump height according to claim 1, wherein: 7. A bump height measuring method for measuring a height of a bump formed on a work surface, wherein the bump is illuminated from a predetermined direction at a predetermined elevation angle with respect to the work surface, and a shadow of the bump is cast. Projecting onto the work surface; imaging the work surface including the shadow; obtaining a main axis and a tip position of the shadow based on image information obtained by the imaging; Illuminating the bump from a direction different from the predetermined direction and not opposite to the predetermined direction at a predetermined elevation angle, and projecting a shadow of the bump on the work surface; and Capturing the main axis and the tip position of the shadow based on the image information obtained by the imaging; And a step of measuring the height of the bump based on the elevation angle. 8. A bump height measuring method for measuring a height of a plurality of bumps arranged on a work surface along a plurality of parallel straight lines, wherein the height of the plurality of bumps is measured from a direction not parallel to the straight line with respect to the work surface. Illuminating the bump at a predetermined elevation angle, projecting a shadow of the bump on the work surface, imaging the work surface including the shadow, and determining the shadow based on image information obtained by the imaging. Determining the main axis and tip position of the bump; illuminating the bump at a predetermined elevation angle with respect to the work surface from a direction that is not parallel to the straight line and that is not opposite to the direction of the illumination; Projecting the shadow on the work surface, imaging the work surface including the shadow, and determining a main axis and a tip position of the shadow based on image information obtained by the imaging. Mel process and the obtained each spindle, bump height measuring method characterized by comprising the step of measuring the respective tip position and height of the bumps based on the elevation angle. 9. The method according to claim 1, wherein the imaging includes a step of obtaining multi-valued numerical data based on brightness for each pixel using an image pickup device having a plurality of pixels, and the tip position is obtained by connecting the numerical data. 9. The bump height measuring method according to claim 7, further comprising a step of calculating an intersection of the obtained waveform and a predetermined threshold value to obtain the tip position. 10. A bump height measuring method for measuring a height of a bump formed on a surface of a work, comprising: a step of illuminating the work surface with incident light from a direction substantially perpendicular to the work surface; An image capturing step; a step of obtaining a position of the bump based on image information obtained by the image capturing; irradiating light at a predetermined elevation angle with respect to the work surface, and projecting a shadow of the bump on the work surface Making the image of the surface of the work including the shadow; obtaining a tip position of the shadow based on image information obtained by the imaging; and setting the position of the bump, the tip position, and the elevation angle. Obtaining the height of the bump based on the height of the bump. 11. A bump position measuring method for measuring a position of a bump formed on a work surface, comprising the steps of illuminating the bump from a predetermined direction and projecting a shadow of the bump on the work surface. Imaging the surface of the work; obtaining the principal axis of the shadow based on image information obtained by the imaging; illuminating the bump from a direction different from the predetermined direction and not opposite to the predetermined direction Projecting the shadow of the bump on the work surface; imaging the work surface including the shadow; obtaining the principal axis of the shadow based on image information obtained by the imaging; Obtaining a point of intersection of the two main axes obtained. 12. A bump height measuring device for measuring the height of a projecting bump formed on the surface of a work, comprising: a holding portion for holding and relatively positioning the work; and a holding portion for holding the work. An illumination unit that illuminates the area of the work including the bump at a predetermined elevation angle from at least one direction, and projects a shadow of the bump on the work; An imaging unit that images the region and outputs image information having the shadow of the bump; a shadow extraction unit that extracts a shadow region of the bump from the image information output by the imaging unit and outputs shadow region information A shadow length calculator for calculating the shadow length of the bump from the shadow area information output by the shadow extractor and the image information output in the imaging step; The shadow length and said Bump height measuring device being characterized in that a height calculation unit for determining the height of the bump from the corner. 13. A bump height measuring device for measuring a height of a bump formed on a work surface, wherein the bump is illuminated from a predetermined direction at a predetermined elevation angle with respect to the work surface, and a shadow of the bump is formed. An illuminating unit for projecting the shadow on the work surface; an imaging unit for imaging the work surface including the shadow; an arithmetic unit for determining a main axis and a tip position of the shadow based on image information obtained by the imaging; Illuminating means for illuminating the bump at a predetermined elevation angle with respect to the work surface and from a direction different from the predetermined direction and not opposite to the predetermined direction, and projecting a shadow of the bump on the work surface; Imaging means for imaging the work surface including a shadow; calculating means for determining a main axis and a tip position of the shadow based on image information obtained by the imaging; Measuring means for measuring the height of the bump based on each of the spindles, the tip positions, and the elevation angle. 14. A bump position measuring device for measuring a position of a bump formed on a work surface, wherein the first illuminating means illuminates the bump from a predetermined direction and projects a shadow of the bump on the work surface. First imaging means for imaging the surface of the work including the shadow; calculating means for determining a main axis of the shadow based on image information obtained by the imaging; and different from the predetermined direction, and different from the predetermined direction. A second illuminating means for illuminating the bumps from directions not opposed to each other and projecting a shadow of the bumps on the work surface; a second imaging means step for imaging the work surface including the shadows; Bump position measurement, comprising: calculating means for obtaining a main axis of the shadow based on the obtained image information; and calculating means for obtaining an intersection of the obtained two main axes. apparatus. 15. A pre-process for producing an IC chip in which an IC circuit is produced on a silicon wafer, separating the IC chip, mounting the IC chip on a lead frame, and respectively mounting the IC chip and the lead frame. Are electrically connected to each other by bonding.
A method of manufacturing a semiconductor device by manufacturing a semiconductor device by encapsulating a C chip with a mold resin, wherein the bonding includes a bump forming step of forming a bump in advance on a bonding pad of the IC chip; A measuring step of measuring the height, and a connecting step of electrically connecting the bump and the lead frame when the bump height measured by the measuring step is within a predetermined range, and as the measuring step A method for manufacturing a semiconductor device, comprising: measuring the bump height using the bump height measurement method according to claim 1. 16. A pre-process for preparing an IC chip in which an IC circuit is formed on a silicon wafer, cutting the IC chip, mounting the IC chip on a lead frame, and setting the IC chip and the lead frame respectively. Are electrically connected to each other by bonding.
A post-process of encapsulating the C chip with a mold resin; and a method of manufacturing a semiconductor device by manufacturing a semiconductor device, wherein the bonding includes a bump forming step of previously forming a bump on at least one of the IC chip or the tape; A measuring step of measuring the height of the bump,
2. A connecting step of electrically connecting the IC chip and the tape via the bump when the bump height measured by the measuring step is within a predetermined range, wherein the measuring step is performed. A method of manufacturing a semiconductor device, comprising measuring the bump height by using the bump height measurement method described in (1). 17. A method for forming a bump by printing a metal paste on a metal sheet, and measuring the height of the bump using the bump height measuring method according to claim 7. A step of mounting an IC chip on one surface side of an insulating sheet; and pressing the other surface of the insulating sheet and the surface on which the bumps are formed after pressing the bumps and the IC. A method for manufacturing a semiconductor chip, comprising: a step of electrically connecting an electrode portion of a chip through the insulating sheet; and a step of etching a predetermined portion of the metal sheet to form a wiring pattern. 18. A semiconductor device mounting method for mounting a semiconductor device having an integrated circuit on which a semiconductor element is integrated on a printed circuit board via a bump, wherein a bump is previously formed on at least one of the semiconductor device and the printed circuit board. Forming a bump forming step;
A measuring step of measuring the height of the bump, and electrically connecting the semiconductor device and the printed board via the bump when the bump height measured in the measuring step is within a predetermined range. A method for mounting a semiconductor device, comprising: a connection step; and measuring the bump height using the bump height measurement method according to claim 1 as the measurement step.