JP2004226106A - Semiconductor appearance inspection device and semiconductor appearance inspection method - Google Patents
Semiconductor appearance inspection device and semiconductor appearance inspection method Download PDFInfo
- Publication number
- JP2004226106A JP2004226106A JP2003011187A JP2003011187A JP2004226106A JP 2004226106 A JP2004226106 A JP 2004226106A JP 2003011187 A JP2003011187 A JP 2003011187A JP 2003011187 A JP2003011187 A JP 2003011187A JP 2004226106 A JP2004226106 A JP 2004226106A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- appearance inspection
- inspection
- inspection apparatus
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4905—Shape
- H01L2224/49051—Connectors having different shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78743—Suction holding means
- H01L2224/78744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/2076—Diameter ranges equal to or larger than 100 microns
Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、半導体製造プロセスにおける組立工程のワイヤボンド後の外観検査を行うための半導体外観検査装置及びこれを用いた半導体外観検査方法に関するものである。
【0002】
【従来の技術】
一般に、半導体装置の製造・組立プロセスにおいて、各工程では、製品の品質を確認し、あるいは不良品を排除するため、外観検査を実施している。具体的には、例えば、正常にボンディングが行われているか否かを検査するために、半導体素子上のボンディングワイヤの形状や高さの検査が行われる。しかしながら、従来の外観検査では、人による目視検査に頼るところが大きいので、人件費等による製造コストの増大や、不良品の見逃しによる客先でのクレームの発生などといった問題を引き起こすことがある。
【0003】
また、近年、半導体装置においては、その高密度化や大規模化に伴い、信号線の取り出しを行うリードの多ピン化や小ピッチ化が進んでいる。このため、半導体チップとパッケージ・リードとの電気的導通を行うボンディングワイヤの本数が多くなり、ワイヤピッチ間隔が狭くなる傾向がある。したがって、正常にボンディングが行われているかの検査の正確性が要求される。そこで、簡便かつ信頼度の高い3次元形状の検査を行うために、かかる検査は、従来の目視検査から半導体外観検査装置を用いる自動検査に移行しつつある(例えば、特許文献1〜7参照)。
【0004】
【特許文献1】
特開平7−37955号公報([0002]、図10)
【特許文献2】
特開平7−288273号公報([0024]、図1)
【特許文献3】
特開平11−83456号公報([0011]、図1)
【特許文献4】
特開平10−199915号公報([0014]、図1)
【特許文献5】
特開平6−102024号公報([0016]、図2)
【特許文献6】
特開平4−277645号公報([0003]、図1)
【特許文献7】
特許第3287263号明細書([0014]、図1)
【0005】
【発明が解決しようとする課題】
しかしながら、従来の半導体外観検査装置ないし半導体外観検査方法では、ワイヤボンド後の外観検査の自動化は、小電力のICの製造分野における金線(Auワイヤ:20〜40μ程度)の接合形状やワイヤ高さの測定・検査についてはほぼ達成されているものの、大電力のパワーモジュールの製造分野におけるアルミ線(A1:数百μm)の外観検査については、未だ作業者による目視検査が行われている。
【0006】
このように、パワーモジュールの外観検査の自動化が十分に達成されない要因としては、例えば、ICの混成により数十μmの細線と、これに比べてかなり太い数百μmの太線とを混成していることや、ウェッジ接合方式への対応がなされていないことなどがあげられる。
【0007】
高さの検査については、例えば特許文献7にも開示されているように、検査対象物の光学的な像を得るための第1のレンズに加えて、移動可能な第2の可動レンズを設け、第2の可動レンズを移動させて検査対象物を撮像し、焦点の一致度から検査対象物の高さの計測を行うようにした半導体外観検査装置が知られている。しかし、この半導体外観検査装置では、計測の精度と構造上の制約とにより、例えば細線(金線)に対応できるようにすると、太線の高さの計測は、計測範囲を超えるため不可能になるといった問題がある。
【0008】
本発明は、上記従来の問題を解決するためになされたものであって、異なる配線材が混成されている場合でも、外観検査を人手に頼らず自動的に行うことができ、検査時間を短縮して検査コストを低減することができる半導体外観検査装置ないし半導体外観検査方法を提供することを解決すべき課題とする。
【0009】
【課題を解決するための手段】
上記課題を解決するためになされた本発明にかかる半導体外観検査装置は、検査対象物に対して移動する可動レンズを有し該検査対象物を撮像する撮像手段(カメラ)と、検査対象物を伴って水平方向に移動する第1のテーブルと、第1のテーブルに搭載され、検査対象物の高さを変化させる第2のテーブルとを備えていることを特徴とするものである。
【0010】
【発明の実施の形態】
以下、添付の図面を参照しつつ、本発明の実施の形態を具体的に説明する。本発明の実施の形態にかかる半導体外観検査装置(ワイヤボンディング外観検査装置)は、いずれも、水平方向に移動することができるように構成された第1のテーブルと、第1のテーブルに搭載されその上面テーブルが上下方向に移動することができるように構成された第2のテーブルと、第2のテーブルの上面テーブル上に載置された検査対象物のボンディングワイヤの所定の検査項目を撮像する撮像手段と、撮像手段の撮像結果を基準値と比較し、前記所定の検査項目に関する合否を判断する合否判断手段とを備えていることを基本的特徴とする。
【0011】
実施の形態1.
図1及び図2は、それぞれ、本発明にかかる半導体外観検査装置(以下、略して「外観検査装置」という。)の立面図及び平面図である。図1及び図2に示すように、この外観検査装置1は、検査対象物である、配線材により配線されたIC等のチップが組み付けられたフレーム2の外観検査を行うようになっている。
【0012】
この外観検査装置1には、フレーム2を搭載(後記のYZテーブル6を介して)した状態で、X軸モータ3及びY軸モータ4により駆動されて水平方向に移動し、フレーム2の水平方向の位置決めを行うXYテーブル5(第1のテーブル)と、XYテーブル5に搭載され水平面と狭小な角度をなす方向に移動してフレーム2の上下方向(高さ方向)の位置決めを行うYZテーブル6(第2のテーブル)とが設けられている。なお、以下では、X軸モータ3及びY軸モータ4の駆動方向(水平方向)を、それぞれ「X軸方向」及び「Y軸方向」という。
【0013】
また、外観検査装置1には、XYテーブル5に搭載されX軸モータ3と同じ方向(X軸方向)の運動を行いYZテーブル6の駆動を行うZ軸モータ7と、Z軸モータ7の駆動によりYZテーブル6にY軸方向(水平方向)の変位を発生させるテーブル変位板8とが設けられている。さらに、外観検査装置1には、検査対象物であるフレーム2の上方に位置しフレーム2に照明光を照射する照明手段11と、フレーム2の撮像を行うカメラ12(撮像手段)と、高さ計測を行うために上下方向に移動する可動レンズ13とが設けられている。
【0014】
ここで、YZテーブル6には、真空配管9を通して供給される真空によりフレーム2を吸着・固定するフレーム吸着手段が設けられている。具体的には、YZテーブル6には、検査対象物であるフレーム2の下側に位置する複数個のフレーム吸着用穴が設けられ、かつYZテーブル6内には図示していない外部の真空ポンプ(真空手段)から真空配管9を通して真空が供給されるようになっている。かくして、フレーム2は、YZテーブル6内の真空によりYZテーブル6に吸着・固定される。これにより、フレーム2のたわみや、移動時におけるフレーム2のずれを抑制することができ、安定した高精度な測定及び検査が可能となる。
【0015】
以下、図3に示すフローチャートに従って、適宜図1及び図2を参照しつつ、この外観検査装置1を用いた半導体装置の外観検査方法(半導体外観検査方法)を説明する。なお、図3に示すフローチャートは、外観検査を行う場合の検査対象物であるフレーム2の位置決めと計測及び検査とを行うためのものである
【0016】
図3に示すように、この外観検査方法においては、まず、検査対象物であるフレーム2をYZテーブル6上の所定(任意)の位置に配置し、XYテーブル5の水平方向(X軸方向及びY軸方向)の移動により、フレーム2を所定の位置に位置決めする。具体的には、X軸モータ3でXYテーブル5をX軸方向に移動させ、XYテーブル5ひいてはフレーム2をX軸方向について所定の位置に位置決めする(ステップS1)。さらに、Y軸モータ4でXYテーブル5をY軸方向に移動させ、XYテーブル5ひいてはフレーム2をY軸方向について所定の位置に位置決めする(ステップS2)。
【0017】
この後、フレーム2の外観検査を行う(ステップS4)。具体的には、照明手段11によりフレーム2に照明光を照射し、カメラ12によりフレーム2の画像を撮像する。そして、ICチップ等に接続された金線等の配線材の接合部の形状(幅、大きさ等)や位置の計測を行い、かつ所定の基準と比較して良否判定等の検査を行う。同様に、配線材の高さについても計測及び検査を行う。
【0018】
この配線材の高さの計測及び検査は、例えば特許文献7に開示されているように、フレーム2の光学的な像を得るための可動レンズ13を移動させてフレーム2を撮像し、焦点の一致度から配線材(フレーム2)の高さの計測を行うといった普通の方法で行われる。そして、全フレーム2について計測及び検査が完了したか否かを判定し(ステップS5)、完了していなければ(NO)、ステップS1〜S4を繰り返す。完了していれば(YES)、計測及び検査を終了する。
【0019】
上記の計測及び検査の途中で、配線材の高さが、可動レンズ13の移動により計測することができる範囲を超えていれば、YZテーブル6の移動によりフレーム2の高さを変更して撮像可能な高さにし、フレーム2をZ軸方向(上下方向)について位置決めする(ステップS3)。この場合、水平面と狭小な角度θをなす方向に移動することができるYZテーブル6には、X軸方向の駆動を行うZ軸モータ7により、テーブル変位板8を介してY軸方向(水平方向)の力が加えられる。そして、YZテーブル6を水平面と角度θをなす方向に移動させることによりZ軸方向に移動させ、検査対象物であるフレーム2の高さを変更する。なお、X軸方向、Y軸方向、Z軸方向の位置決めを同時に行えば、ロスタイムの発生を最小限に抑えることができ、外観検査を短時間で行うことができる。
【0020】
YZテーブル6は、その駆動方向(Y軸方向)と垂直な方向(X軸方向)に伸びる直線を横軸とするsin曲線に基づく変位により駆動される。つまり、テーブル変位板8の変位曲線は、YZテーブル6を移動させる際の移動時及び停止時に変曲点が生じないsin曲線とされている。これにより、YZテーブル6の移動時及び停止時に、振動のない安定した位置決め制御を行うことができ、高速かつ高精度で計測及び検査を行うことができる。
【0021】
ここで、YZテーブル6のY軸方向の移動量をYとすれば、Z軸方向の高さZは、次の式1であらわされる。
【数1】
Z=Y*sinθ…………………………………………………………式1
また、例えば、Z軸モータ7によるテーブル変位板8のX軸方向の移動量をXとし、X軸方向と垂直なY軸方向の移動量をYとしたとき、X軸方向の任意の移動量xと、これに対するY軸方向の移動量y及びZ軸方向の移動量zとの関係は、次の式2、式3であらわされる。
【数2】
y=K*x……………………………………………………………式2
ただし、K=Y/X
【数3】
z=y*sinθ…………………………………………………………式3
【0022】
テーブル変位板8の変位曲線がsin曲線である場合、Y軸方向の移動量yは、次の式4であらわされる。
y=Y*(sin((x/X−0.5)*π)+1)/2………………………式4
なお、YZテーブル6でのY軸方向の移動分は、XYテーブル5で逆方向の移動を行うことにより、高さを変更した場合の水平方向の位置の補正を行うことができる。
【0023】
よって、テーブル変位板8の移動量を制御することにより、YZテーブル6の高さを任意に設定することができる。これにより、検査対象物であるフレーム2の形状や配線材の形状及び/又は高さが異なる場合でも、きめ細かな高さ設定を行うことができ、高精度な測定及び検査を行うことができる。
【0024】
外観検査装置1をこのような構造とすることにより、空間を有効に活用することができ、検査対象物の適用範囲を拡大することができ、かつ外観検査装置1の大型化を抑制することができ、あるいは相対的に小型の外観検査装置1を得ることができる。また、外観検査を完全に自動化することができ、検査能力を向上させることができる。
【0025】
実施の形態2.
以下、本発明の実施の形態2を説明する。ただし、実施の形態2にかかる外観検査装置ないしこれを用いた外観検査方法の基本的な構成は、実施の形態1にかかる外観検査装置ないし外観検査方法と共通であるので、説明の重複を避けるため、以下では主として実施の形態1と異なる点を説明する。なお、後記の実施の形態3、4についても同様である。
【0026】
実施の形態2では、図4に示すようなフレーム2を検査対象物として計測・検査を行う。
図4に示すように、実施の形態2では、フレーム2は、ICチップ15とパワーチップ16と細線17(配線材)と太線18(配線材)とを備えている。このフレーム2において、パワーチップ16が組み付けられた部分(パワーチップ部)ではフレーム2の一部が他の部分(以下、「本体部」という。)より低くなった、高さ方向の段差を伴った構造を有している。そして、ICチップ15はフレーム2の本体部に取り付けられ、パワーチップ16はフレームの低くなった部分(以下、「段差部」という。)に取り付けられている。
【0027】
ここで、ICチップ15は細線17によりフレーム2(本体部)に接続され、パワーチップ16は太線18によりフレーム2(本体部)又は段差部に取り付けられた他のパワーチップ16に接続されている。図4から明らかなとおり、高さ方向の計測・検査範囲は、ICチップ15に接続された細線17ではAで示す範囲であり、パワーチップ16に接続された太線18ではBで示す範囲である。
【0028】
このような検査対象物(フレーム2)の場合、ICチップ15に接続された細線17の計測・検査は、図1に示す外観検査装置1あるいは従来の外観検査装置において、可動レンズ13の移動(調節)のみで実施することができる。しかし、パワーチップ16に接続された太線18では、高さ方向の計測・検査範囲が、可動レンズ13で調節可能な範囲を超えてしまう。そこで、YZテーブル6によりフレーム2の高さを変更した上で、可動レンズ13を移動させて(調節して)高さの測定・検査を行うようにしている。このとき、YZテーブル6で変位させた高さの補正を行う。
【0029】
ここで、ICチップ15に接続された細線17としては、例えば、直径が20〜40μm程度の細い金線が用いられる。また、パワーチップ16に接続された太線18としては、例えば、直径が200〜400μm程度の太いアルミ線が用いられる。なお、太線18がアルミ線の場合、その接合は一般にウェッジ接合である。
そこで、図5に示すように、この外観検査装置1では、ウェッジ接合部の形状を特徴づける特性値として、幅Wと、長さL1と、長さL2と、角度ψとを設定し、これらの測定を行い、外観検査を行うようにしている。
【0030】
実施の形態2にかかる外観検査装置ないしこれを用いた検査方法によれば、以上のような構成により、1台の外観検査装置1で金線である細線17やアルミ線である太線18の2種類の検査が可能となる。これにより、検査の多様化が図られ、従来は人の目視で行われていた外観検査の自動化が実現される。
【0031】
実施の形態3.
以下、本発明の実施の形態3にかかる外観検査装置ないしこれを用いた検査方法を説明する。ウェッジ接合部の形状の測定及び検査を行う場合、カメラ12(撮像手段)で検査対象物であるフレーム2を撮像してウェッジの画像を得た後、ウェッジの輪郭抽出を行う。
【0032】
図6に示すように、実施の形態3では、輪郭部の画素座標に基づいて最小二乗法で4次近似曲線を求めて輪郭抽出を行い、幅部の最も太い部分で幅Wを決定し、最も細い部分に基づいて接合部の長さL1を決定するようにしている。実施の形態3にかかる外観検査装置ないしこれを用いた検査方法によれば、上記機能を備えているので、画像ノイズ等を排除して輪郭を安定して抽出することができ、高精度な検出が可能となり、計測・検査の安定化を図ることができる。
【0033】
実施の形態4.
以下、本発明の実施の形態4にかかる外観検査装置ないしこれを用いた検査方法を説明する。実施の形態4では、Z軸モータ7は、サーボモータ又はステッピングモータである。また、前記のとおり、任意の高さ制御を行う必要がなく2値の高さを得るのみであれば、モータに代えてシリンダ等の機器を使用してもよい。テーブル変位板8については、曲線や直線等の任意の形状の変位曲線を備えたものを使用してもよい。また、直接Z軸モータ7でYZテーブル6を駆動する場合は、テーブル変位板8は設けなくてもよい。さらに、YZテーブル6は、角度θをもつ構造でなくともよく、例えばZ軸モータ7で直接Z軸方向の高さを変える構造であってもよい。実施の形態4によっても、基本的には、実施の形態1〜3と同様の効果が得られる。
【0034】
以上、本発明の実施の形態1〜4によれば、検査対象物及び検査の内容を、使用の目的に合わせて好ましく選択すれば、コストを低減することができる。また、前記したように外観検査装置1の適用範囲を拡大して自動化を実現することができる。以上のような構成により、従来人の目視で行われていた外観検査の適用範囲が拡大し、外観検査の自動化、能力向上による生産性向上、人件費削減及び不良品の流出等による不良対策(クレーム対策)費削減によるコスト低減などといった種々の効果が得られる。
【0035】
【発明の効果】
本発明によれば、第1のテーブルに搭載され検査対象物の高さを変化させる第2のテーブルとを備えているので、外観検査を人手に頼らず自動的に行うことができ、検査時間を短縮して検査コストを低減することができる。
【図面の簡単な説明】
【図1】本発明にかかる外観検査装置の立面図である。
【図2】図1に示す外観検査装置の平面図である。
【図3】本発明にかかる外観検査方法のフローチャートである。
【図4】本発明にかかる外観検査装置ないし外観検査方法で外観検査が行われるフレームの立面図である。
【図5】フレームの太線のウェッジ接合部の形状を示す図である。
【図6】ウェッジ接合部の画像の輪郭部を示す図である。
【符号の説明】
1 外観検査装置、 2 フレーム、 3 X軸モータ、 4 Y軸モータ、5 XYテーブル、 6 YZテーブル、 7 Z軸モータ、 8 テーブル変位板、 9 真空配管、 10 フレーム吸着手段、 11 照明手段、 12 カメラ、 13 可動レンズ、 15 ICチップ、 16 パワーチップ、 17 細線、 18 太線。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor visual inspection apparatus for performing visual inspection after wire bonding in an assembly process in a semiconductor manufacturing process and a semiconductor visual inspection method using the same.
[0002]
[Prior art]
In general, in each process of manufacturing and assembling a semiconductor device, an appearance inspection is performed in order to confirm the quality of a product or eliminate defective products. Specifically, for example, in order to inspect whether bonding is normally performed, the shape and height of the bonding wire on the semiconductor element are inspected. However, since the conventional appearance inspection relies heavily on human visual inspection, it may cause problems such as an increase in manufacturing costs due to labor costs and the occurrence of complaints at customers due to overlooking of defective products.
[0003]
In recent years, in semiconductor devices, as the density and scale of semiconductor devices increase, the number of leads for taking out signal lines has been increased and the pitch has been reduced. For this reason, the number of bonding wires for conducting electrical continuity between the semiconductor chip and the package leads increases, and the wire pitch interval tends to be narrowed. Therefore, the accuracy of the inspection of whether the bonding is normally performed is required. Therefore, in order to perform a simple and highly reliable inspection of a three-dimensional shape, the inspection is shifting from a conventional visual inspection to an automatic inspection using a semiconductor appearance inspection apparatus (for example, see
[0004]
[Patent Document 1]
Japanese Unexamined Patent Publication No. 7-37955 ([0002], FIG. 10)
[Patent Document 2]
Japanese Patent Laid-Open No. 7-288273 ([0024], FIG. 1)
[Patent Document 3]
Japanese Patent Laid-Open No. 11-83456 ([0011], FIG. 1)
[Patent Document 4]
JP-A-10-199915 ([0014], FIG. 1)
[Patent Document 5]
JP-A-6-102024 ([0016], FIG. 2)
[Patent Document 6]
JP-A-4-277645 ([0003], FIG. 1)
[Patent Document 7]
Japanese Patent No. 3287263 ([0014], FIG. 1)
[0005]
[Problems to be solved by the invention]
However, in the conventional semiconductor visual inspection apparatus or semiconductor visual inspection method, automation of visual inspection after wire bonding is performed by using a bonding shape or wire height of a gold wire (Au wire: about 20 to 40 μm) in the field of manufacturing a low-power IC. Although the measurement / inspection is almost achieved, the visual inspection of the aluminum wire (A1: several hundred μm) in the field of manufacturing a high-power power module is still performed by an operator.
[0006]
In this way, as a factor that the automation of the appearance inspection of the power module is not sufficiently achieved, for example, a thin line of several tens of μm is mixed with a thick line of several hundreds of μm that is considerably thicker than that due to the hybrid of ICs. And the lack of support for the wedge bonding method.
[0007]
For the height inspection, for example, as disclosed in Patent Document 7, a movable second movable lens is provided in addition to the first lens for obtaining an optical image of the inspection object. A semiconductor visual inspection apparatus is known in which a second movable lens is moved to image an inspection object, and the height of the inspection object is measured from the degree of coincidence of focus. However, in this semiconductor appearance inspection apparatus, if it is possible to cope with, for example, a thin line (gold line) due to measurement accuracy and structural restrictions, the measurement of the height of the thick line becomes impossible because it exceeds the measurement range. There is a problem.
[0008]
The present invention has been made to solve the above-described conventional problems, and even when different wiring materials are mixed, the appearance inspection can be automatically performed without relying on human hands, and the inspection time is shortened. Thus, it is an object to be solved to provide a semiconductor appearance inspection apparatus or a semiconductor appearance inspection method capable of reducing the inspection cost.
[0009]
[Means for Solving the Problems]
A semiconductor appearance inspection apparatus according to the present invention, which has been made to solve the above-described problems, includes an imaging means (camera) that has a movable lens that moves with respect to an inspection object and images the inspection object, and an inspection object. Along with this, there is provided a first table that moves in the horizontal direction, and a second table that is mounted on the first table and changes the height of the inspection object.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings. A semiconductor visual inspection apparatus (wire bonding visual inspection apparatus) according to an embodiment of the present invention is mounted on a first table configured to be able to move in the horizontal direction and the first table. The second table configured so that the upper surface table can move in the vertical direction, and a predetermined inspection item of the bonding wire of the inspection object placed on the upper surface table of the second table are imaged. Basic features include imaging means and acceptance / rejection judging means for comparing the imaging result of the imaging means with a reference value and judging acceptance / rejection for the predetermined inspection item.
[0011]
1 and 2 are an elevation view and a plan view, respectively, of a semiconductor appearance inspection apparatus (hereinafter referred to as “appearance inspection apparatus” for short) according to the present invention. As shown in FIGS. 1 and 2, the
[0012]
The
[0013]
Further, in the
[0014]
Here, the YZ table 6 is provided with a frame suction means for sucking and fixing the
[0015]
A semiconductor device appearance inspection method (semiconductor appearance inspection method) using the
As shown in FIG. 3, in this appearance inspection method, first, the
[0017]
Thereafter, an appearance inspection of the
[0018]
For example, as disclosed in Patent Document 7, the height of the wiring material is measured by moving the
[0019]
If the height of the wiring material exceeds the range that can be measured by moving the
[0020]
The YZ table 6 is driven by displacement based on a sine curve having a horizontal axis as a straight line extending in a direction (X-axis direction) perpendicular to the drive direction (Y-axis direction). That is, the displacement curve of the
[0021]
Here, if the amount of movement of the YZ table 6 in the Y-axis direction is Y, the height Z in the Z-axis direction is expressed by the
[Expression 1]
Z = Y * sinθ …………………………………………………………
Further, for example, when the movement amount in the X-axis direction of the
[Expression 2]
y = K * x ………………………………………………………………
However, K = Y / X
[Equation 3]
z = y * sinθ …………………………………………………………
[0022]
When the displacement curve of the
y = Y * (sin ((x / X−0.5) * π) +1) / 2...
The movement in the Y-axis direction on the YZ table 6 can be corrected in the horizontal direction when the height is changed by moving in the reverse direction on the XY table 5.
[0023]
Therefore, the height of the YZ table 6 can be arbitrarily set by controlling the amount of movement of the
[0024]
By making the
[0025]
The second embodiment of the present invention will be described below. However, the basic configuration of the visual inspection apparatus according to the second embodiment or the visual inspection method using the same is the same as that of the visual inspection apparatus or the visual inspection method according to the first embodiment, and therefore, redundant description is avoided. Therefore, differences from the first embodiment will be mainly described below. The same applies to Embodiments 3 and 4 described later.
[0026]
In the second embodiment, measurement / inspection is performed using a
As shown in FIG. 4, in the second embodiment, the
[0027]
Here, the
[0028]
In the case of such an inspection object (frame 2), the measurement / inspection of the
[0029]
Here, as the
Therefore, as shown in FIG. 5, in this
[0030]
According to the appearance inspection apparatus or the inspection method using the same according to the second embodiment, the
[0031]
Hereinafter, an appearance inspection apparatus according to a third embodiment of the present invention or an inspection method using the same will be described. When measuring and inspecting the shape of the wedge joint, the camera 12 (imaging means) captures the
[0032]
As shown in FIG. 6, in the third embodiment, a quartic approximation curve is obtained by the least square method based on the pixel coordinates of the contour portion, contour extraction is performed, and the width W is determined at the thickest portion of the width portion. The length L1 of the joint is determined based on the thinnest part. According to the appearance inspection apparatus or the inspection method using the same according to the third embodiment, since the above function is provided, it is possible to stably extract the contour by eliminating image noise and the like, and highly accurate detection. Measurement and inspection can be stabilized.
[0033]
Hereinafter, an appearance inspection apparatus according to
[0034]
As described above, according to the first to fourth embodiments of the present invention, the cost can be reduced if the inspection object and the content of the inspection are preferably selected according to the purpose of use. Further, as described above, the application range of the
[0035]
【The invention's effect】
According to the present invention, since the second table mounted on the first table and changing the height of the inspection object is provided, the appearance inspection can be automatically performed without relying on human hands, and the inspection time can be increased. This can shorten the inspection cost.
[Brief description of the drawings]
FIG. 1 is an elevation view of an appearance inspection apparatus according to the present invention.
FIG. 2 is a plan view of the appearance inspection apparatus shown in FIG.
FIG. 3 is a flowchart of an appearance inspection method according to the present invention.
FIG. 4 is an elevation view of a frame in which an appearance inspection is performed by the appearance inspection apparatus or the appearance inspection method according to the present invention.
FIG. 5 is a diagram showing a shape of a wedge joint portion of a thick line of a frame.
FIG. 6 is a diagram illustrating a contour portion of an image of a wedge joint portion.
[Explanation of symbols]
DESCRIPTION OF
Claims (10)
検査対象物を伴って水平方向に移動する第1のテーブルと、
第1のテーブルに搭載され、検査対象物の高さを変化させる第2のテーブルとを備えていることを特徴とする半導体外観検査装置。An imaging unit having a movable lens that moves relative to the inspection object, and that images the inspection object;
A first table that moves in a horizontal direction with the inspection object;
A semiconductor visual inspection apparatus, comprising: a second table mounted on the first table and changing the height of the inspection object.
第1のテーブルに搭載され、その上面テーブルが上下方向に移動することができるように構成された第2のテーブルと、
第2のテーブルの上面テーブル上に載置された検査対象物のボンディングワイヤの所定の検査項目を撮像する撮像手段と、
撮像手段の撮像結果を基準値と比較し、前記所定の検査項目に関する合否を判断する合否判断手段とを備えていることを特徴とする半導体外観検査装置。A first table configured to be able to move horizontally;
A second table mounted on the first table and configured so that the upper surface table can move in the vertical direction;
Imaging means for imaging a predetermined inspection item of the bonding wire of the inspection object placed on the upper surface table of the second table;
A semiconductor appearance inspection apparatus, comprising: a pass / fail determination unit that compares an imaging result of the imaging unit with a reference value to determine pass / fail regarding the predetermined inspection item.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003011187A JP2004226106A (en) | 2003-01-20 | 2003-01-20 | Semiconductor appearance inspection device and semiconductor appearance inspection method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003011187A JP2004226106A (en) | 2003-01-20 | 2003-01-20 | Semiconductor appearance inspection device and semiconductor appearance inspection method |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004226106A true JP2004226106A (en) | 2004-08-12 |
Family
ID=32900161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003011187A Pending JP2004226106A (en) | 2003-01-20 | 2003-01-20 | Semiconductor appearance inspection device and semiconductor appearance inspection method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2004226106A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012173202A (en) * | 2011-02-23 | 2012-09-10 | Joyo Machine Co Ltd | Method and apparatus for three-dimensional positioning of wire bond |
JP2016021517A (en) * | 2014-07-15 | 2016-02-04 | キヤノンマシナリー株式会社 | Bonding distance measuring method, bonding strength evaluation method, bonding distance measuring device and bonding strength evaluation device |
CN109060835A (en) * | 2018-08-24 | 2018-12-21 | 奇瑞万达贵州客车股份有限公司 | A kind of appearance inspection device of chip |
-
2003
- 2003-01-20 JP JP2003011187A patent/JP2004226106A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012173202A (en) * | 2011-02-23 | 2012-09-10 | Joyo Machine Co Ltd | Method and apparatus for three-dimensional positioning of wire bond |
JP2016021517A (en) * | 2014-07-15 | 2016-02-04 | キヤノンマシナリー株式会社 | Bonding distance measuring method, bonding strength evaluation method, bonding distance measuring device and bonding strength evaluation device |
CN109060835A (en) * | 2018-08-24 | 2018-12-21 | 奇瑞万达贵州客车股份有限公司 | A kind of appearance inspection device of chip |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3802403B2 (en) | Wire bonding method and apparatus | |
CN110487189B (en) | Flatness detection method, flatness detection device, and storage medium | |
KR960001824B1 (en) | Wire bonding inspecting apparatus | |
JP2015190826A (en) | Substrate inspection device | |
JPH09504152A (en) | Capillary indentation detection method and device | |
JP2019054203A (en) | Manufacturing apparatus for semiconductor and manufacturing method for semiconductor | |
JPH05160231A (en) | Bonding wire inspecting apparatus | |
US6242756B1 (en) | Cross optical axis inspection system for integrated circuits | |
JP7450272B2 (en) | Measuring the loop height of overlapping bond wires | |
TW202109027A (en) | Wafer appearance inspection device and method | |
JP2004226106A (en) | Semiconductor appearance inspection device and semiconductor appearance inspection method | |
JP2008041758A (en) | Method and apparatus for inspecting transferred state of flux | |
JP3933060B2 (en) | Bonding wire inspection method | |
JPH06137825A (en) | Inspecting method for bump of work and its device | |
JP2018152375A (en) | Die-bonding device and method of manufacturing semiconductor device | |
KR101028335B1 (en) | Inspecting apparatus for wire | |
KR100291780B1 (en) | Bond wire inspection device and its inspection method | |
JPS6336543A (en) | Method and apparatus for automatic inspection of semiconductor device | |
JP2003322625A (en) | Method and apparatus for inspecting semiconductor chip | |
KR101124566B1 (en) | Apparatus for examining a wafer | |
Zhang et al. | Computer vision system for the measurement of IC wire-bond height | |
JP3008745B2 (en) | Wire bonding inspection method and wire bonding inspection device | |
JPH04315905A (en) | Object examining device | |
JPS62274205A (en) | Method and device for inspecting lead flatness | |
JP3966800B2 (en) | Surface inspection device |