JPH0968405A - Bonding wire connection state inspecting instrument - Google Patents

Bonding wire connection state inspecting instrument

Info

Publication number
JPH0968405A
JPH0968405A JP7224249A JP22424995A JPH0968405A JP H0968405 A JPH0968405 A JP H0968405A JP 7224249 A JP7224249 A JP 7224249A JP 22424995 A JP22424995 A JP 22424995A JP H0968405 A JPH0968405 A JP H0968405A
Authority
JP
Japan
Prior art keywords
bonding wire
chip
mirror
connection state
virtual plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7224249A
Other languages
Japanese (ja)
Inventor
Shoji Kato
昭治 加藤
Kimihiro Kurosaki
公浩 黒崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TSUKUBA SEIKO KK
Original Assignee
TSUKUBA SEIKO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TSUKUBA SEIKO KK filed Critical TSUKUBA SEIKO KK
Priority to JP7224249A priority Critical patent/JPH0968405A/en
Publication of JPH0968405A publication Critical patent/JPH0968405A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/1016Shape being a cuboid
    • H01L2924/10161Shape being a cuboid with a rectangular active surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

PROBLEM TO BE SOLVED: To enable measurement and judgment three-dimensionally on whether the height of an IC chip and a bonding wire and a distance therebetween are within a prescribed value. SOLUTION: In structure, a bonding wire 28 welded on the top surface of an IC chip 26 extends upward and is curved gently down to the surface of a lead frame 27. A mirror 24 which projects the bonding wire 28 and the IC chip 26 onto the surface of a mirror 24 is arranged on the side of the bonding wire 28 to tell how the bonding wire 28 is curved and integrated with a camera 22 above the bonding wire 28 to take in an image thereof. Moreover, a measurement is made possible along the shape of the bonding wire 28 projected on the mirror 24 and an arithmetic means is provided to calculate a distance between the IC chip 26 and the bonding wire 28 from a measured value obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ICの品質保証を
するための、ICチップとボンディングワイヤとの接続
状態の検査装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for inspecting a connection state between an IC chip and a bonding wire for guaranteeing the quality of an IC.

【0002】[0002]

【従来の技術】従来この種のものとしては、例えば図4
に示すようにリードフレーム7上に接着剤9で接着され
たICチップ6と、電極外部とを結ぶリードフレーム7
とを結線する、いわゆるワイヤボンディングがある。こ
れは、生産に入る前の試作時点において、生産用のワイ
ヤボンディング装置(図示省略)を使用して実際に何度
もボンディングワイヤ8を結線し、ボンディング状態を
拡大鏡や顕微鏡等を使用して目視検査をしているもので
ある。
2. Description of the Related Art Conventionally, for example, as shown in FIG.
The lead frame 7 connecting the IC chip 6 adhered onto the lead frame 7 with the adhesive 9 and the outside of the electrode as shown in FIG.
There is so-called wire bonding, which connects to and. This is because at the time of trial production before starting production, the wire bonding device (not shown) for production is used to actually connect the bonding wires 8 many times, and the bonding state is changed by using a magnifying glass or a microscope. It is a visual inspection.

【0003】そして、この試作されたボンディングワイ
ヤ8の融着部であるボール8aの大きさやクレセント8
bの形状の適正が確認された上に、ボンディングワイヤ
8の高低や変形等の欠陥の有無を目視判断して、適正に
製作できる状態になった時点で、生産に入ることが一般
に行なわれている。
The size of the ball 8a, which is the fusion-bonded portion of the bonding wire 8 thus manufactured, and the crescent 8
In addition to confirming the appropriateness of the shape of b, the presence / absence of defects such as height and deformation of the bonding wire 8 is visually judged, and when it is in a state where the bonding wire 8 can be properly manufactured, it is common to start production. There is.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前記ボ
ンディングワイヤ8を結線した後ボンディング状態を目
視検査する方法は平面で見るのが主体で、三次元的にボ
ンディングワイヤ8の過度の高低の良否を数十μmの単
位で目視検査するのは難しい。そして、結線されたボン
ディングワイヤ8が樹脂封止時に、樹脂封子部から飛び
出したり変形して絡み短絡したりICチップ6と接触し
たりするのが不良の主な原因になっていた。
However, the method of visually inspecting the bonding state after connecting the bonding wire 8 is mainly to see it in a flat plane, and the bonding wire 8 is checked in three dimensions to determine whether the bonding wire 8 is excessively high or low. It is difficult to perform visual inspection in units of 10 μm. The main cause of the defect is that the bonded bonding wire 8 jumps out of the resin encapsulation portion or is deformed and entangled to cause a short circuit or contact with the IC chip 6 during resin encapsulation.

【0005】そして、最終工程の動作試験において不良
が見出されると不良の該当する工程を再検査し原因を追
求する必要がしばしば発生していた。
When a defect is found in the operation test of the final process, it is often necessary to re-inspect the process corresponding to the defect and pursue the cause.

【0006】そこで、この発明は、ICチップからのボ
ンディングワイヤの高さや距離が、規格値内に入ってい
るか否かを三次元的に測定判断できるボンディングワイ
ヤ接続状態検査装置を提供することを目的にしている。
Therefore, an object of the present invention is to provide a bonding wire connection state inspection device capable of three-dimensionally measuring and determining whether or not the height or distance of the bonding wire from the IC chip is within a standard value. I have to.

【0007】[0007]

【課題を解決するための手段】この目的を達成するた
め、請求項1に記載の発明は、ICチップ上面に溶着さ
れたボンディングワイヤが、上方へ向かって延び湾曲し
て山なりにリードフレーム面まで下がる構造物におい
て、前記ICチップの算出された仮想平面から前記ボン
ディングワイヤまでの距離を測るボンディングワイヤ接
続状態検査装置であって、前記ボンディングワイヤの湾
曲状態がわかるように、ミラー面にボンディングワイヤ
およびICチップを映し出すミラーをボンディングワイ
ヤ側に配置させ、前記ボンディングワイヤの上方に映像
を取り込むカメラと一体に設け、該ミラーに映し出され
たボンディングワイヤの形状に沿うように測定可能と
し、該測定値から仮想平面とボンディングワイヤとの距
離を算出する演算手段を設けたことを特徴としている。
In order to achieve this object, the invention as set forth in claim 1 is such that the bonding wire welded to the upper surface of the IC chip extends upward and curves to form a ridged lead frame surface. A bonding wire connection state inspection device for measuring a distance from a calculated virtual plane of the IC chip to the bonding wire in a structure descending to a bonding surface on a mirror surface so that a bending state of the bonding wire can be known. And a mirror for projecting the IC chip is arranged on the side of the bonding wire, provided integrally with a camera for capturing an image above the bonding wire, and the measurement can be performed along the shape of the bonding wire projected on the mirror. From the virtual plane to the bonding wire It is characterized in that digit.

【0008】この請求項1に記載の発明では、ICチッ
プの仮想平面とボンディングワイヤの三次元的な形状と
がそのままボンディングワイヤの形状に沿ってカメラか
ら取り入れることができ演算処理をすることにより仮想
平面からのボンディングワイヤの高さや距離を算出する
ことができる。
According to the first aspect of the present invention, the virtual plane of the IC chip and the three-dimensional shape of the bonding wire can be taken from the camera along the shape of the bonding wire as they are, and the virtual processing is carried out. The height and distance of the bonding wire from the plane can be calculated.

【0009】請求項2に記載のボンディングワイヤ接続
状態検査装置は、前記演算手段は、前記ICチップの一
端面の上角線をミラーに映し出し、該角線の両端の測定
点(a及びb)と、相対する他の端面の上角線をミラー
に映し出した該角線の略中央測定点(c)との座標位置
から、この三点(a,b,c)間の測定値を基にICチ
ップの仮想平面を算出すると共に、前記ミラーに映し出
されたボンディングワイヤの形状に沿って移動する測定
点の高さとICチップ仮想平面角線からの距離とを測定
し、ICチップ仮想平面とボンディングワイヤとの最短
距離を算出することを特徴としている。
In the bonding wire connection state inspection device according to a second aspect of the present invention, the arithmetic means projects the upper corner line of one end face of the IC chip on a mirror, and the measurement points (a and b) at both ends of the corner line. Based on the measured values between these three points (a, b, c) from the coordinate position between the upper corner line of the opposite end face and the substantially central measurement point (c) of the corner line reflected on the mirror. The virtual plane of the IC chip is calculated, and the height of the measurement point that moves along the shape of the bonding wire projected on the mirror and the distance from the angle line of the virtual plane of the IC chip are measured to bond with the virtual plane of the IC chip. The feature is that the shortest distance to the wire is calculated.

【0010】この請求項2に記載の発明では、各ICチ
ップの仮想平面を算出することで正確に測定基準面を決
めることができる。また、この基準面を基にICチップ
にボンディングワイヤが最も近ずいている距離(L)が
見い出せ、この算出値が規格値を満足しない場合には、
不良品として選別削除することができる。
According to the second aspect of the present invention, the measurement reference plane can be accurately determined by calculating the virtual plane of each IC chip. If the distance (L) at which the bonding wire is closest to the IC chip can be found based on this reference surface, and this calculated value does not satisfy the standard value,
It can be sorted and deleted as defective products.

【0011】請求項3に記載のボンディングワイヤ接続
状態検査装置は、前記ミラーユニットのミラーは左右一
対に設け回転可能な構成としたことを特徴としている。
According to a third aspect of the present invention, there is provided a bonding wire connection state inspection device characterized in that the mirrors of the mirror unit are provided in right and left pairs so as to be rotatable.

【0012】この請求項3に記載の発明では、ミラーに
映し出されたボンディングワイヤの形状が左右対象に映
し出されるので、その左右の映像のずれからミラーの設
定位置のずれ等が見い出し易い。
According to the third aspect of the invention, since the shape of the bonding wire projected on the mirror is projected on the left and right sides, it is easy to find a deviation of the set position of the mirror from the deviation of the left and right images.

【0013】[0013]

【発明の実施の形態】図1ないし図3は本発明の実施の
形態に係わるICチップとボンディングワイヤとの接続
状態を検査する装置及び方法を示めしたものである。
1 to 3 show an apparatus and method for inspecting a connection state between an IC chip and a bonding wire according to an embodiment of the present invention.

【0014】まず、構成を説明すると、図1(a)の符
号21はボンディングワイヤ接続状態検査装置であり、
22はCCDカメラ、22aは接写レンズ、22bはハ
ーフミラー、23は落射装置、24はミラー、25は演
算装置で、このミラー24の下方の図示省略の搬送治具
上にICチップ26が設置され、27はリードフレーム
でこの二者間を結線しているのがボンディングワイヤ2
8である。このボンディングワイヤ28と、ICチップ
26との溶着部はボール28aと呼ばれ、リードフレー
ム27との溶着部はクレセント28bと呼ばれている。
First, the structure will be described. Reference numeral 21 in FIG. 1A is a bonding wire connection state inspection device,
Reference numeral 22 is a CCD camera, 22a is a close-up lens, 22b is a half mirror, 23 is an epi-illumination device, 24 is a mirror, and 25 is a computing device. An IC chip 26 is installed below the mirror 24 on a carrying jig (not shown). , 27 is a lead frame, and the connection between these two is the bonding wire 2.
8 The welded portion of the bonding wire 28 and the IC chip 26 is called a ball 28a, and the welded portion of the lead frame 27 is called a crescent 28b.

【0015】このボンディング状態A部を拡大して図1
(b)に示している。
FIG. 1 is an enlarged view of this bonding state A portion.
This is shown in FIG.

【0016】また、前記CCDカメラ22とミラー24
とは図示省略のX,Yステージ上に一体に装着されてお
り、ミラー24は回転自在に設けられている。
The CCD camera 22 and the mirror 24 are also provided.
Is integrally mounted on an X, Y stage (not shown), and the mirror 24 is rotatably provided.

【0017】そして、落射装置23によりハーフミラー
22bを介して照射されたボンディングワイヤ28のミ
ラー24に映し出され映像は、接写レンズ22aを介し
てCCDカメラ22から取り込まれ演算装置25へ転送
されて、ICチップ26とボンディングワイヤ28との
距離を算出する機能を有している。
Then, the image projected on the mirror 24 of the bonding wire 28 irradiated by the epi-illumination device 23 through the half mirror 22b is taken in from the CCD camera 22 through the close-up lens 22a and transferred to the arithmetic unit 25, It has a function of calculating the distance between the IC chip 26 and the bonding wire 28.

【0018】また、ミラー24は左右一対の構造(図中
にては破線で示している。)にしてもよい。ミラー24
一枚の場合と機能は全く同様である。
The mirror 24 may have a pair of left and right structures (shown by broken lines in the figure). Mirror 24
The function is exactly the same as the case of one sheet.

【0019】また、ICチップ26及びリードフレーム
27はボンディングワイヤ28により結線されると、ミ
ラーユニット24の下方の搬送治具により順次移行され
てボンディングワイヤ検査が連続的に行える構成となっ
ている。
When the IC chip 26 and the lead frame 27 are connected by the bonding wire 28, the IC chip 26 and the lead frame 27 are sequentially moved by the carrying jig below the mirror unit 24 so that the bonding wire inspection can be continuously performed.

【0020】図2(a)(b)には、仮想平面を測定し
算出する方法を示している。
2A and 2B show a method of measuring and calculating a virtual plane.

【0021】先ず、図2(a)に示すようにリードフレ
ーム27に接着されたICチップ26をミラー24に映
し出したようすを示している。この図の正面図は図面に
向かって左上角線26bをミラー24に映した状態を示
しており、同じく平面図には同じ上角線26bの端末近
傍のa,b点をミラー24にa’,b’点として映し出
している。
First, as shown in FIG. 2A, the IC chip 26 adhered to the lead frame 27 is projected on the mirror 24. The front view of this figure shows a state in which the upper left corner line 26b is reflected on the mirror 24 toward the drawing, and in the same plan view, points a and b near the terminal of the same upper corner line 26b are a'on the mirror 24. , B'point.

【0022】すなわち、ICチップ26の上角線26b
がb点からa点に向かって上がり高さが異なることをミ
ラー24の映像a’,b’点は示している。そして、こ
の平面図に示す映像から高さ寸法である寸法A/2とB
/2とを得る。
That is, the upper corner line 26b of the IC chip 26
The points a'and b'of the mirror 24 show that the height rises from point b to point a and the heights are different. Then, from the image shown in this plan view, the height dimensions A / 2 and B
We get / 2.

【0023】次に、図2(b)ではリードフレーム27
に接着したICチップ26を搬送治具によりICチップ
26幅分移行させた状態を示している。
Next, in FIG. 2B, the lead frame 27
It shows a state in which the IC chip 26 adhered to is transferred by the width of the IC chip 26 by a carrying jig.

【0024】そして、正面図にはICチップ26の他端
の上角線26cをミラー24に映し出した状態を示して
いる。この同図の平面図の映像から、前記他端の右角線
26cの略中央に設けられたc点と、ミラー24に映し
出されたc’点との寸法C/2が得られる。
The front view shows a state in which the upper corner line 26c of the other end of the IC chip 26 is projected on the mirror 24. From the image of the plan view of the same figure, the dimension C / 2 of the point c provided at the substantially center of the right-angled line 26c at the other end and the point c'projected on the mirror 24 can be obtained.

【0025】そして、これらa,b,cの三点が、ミラ
ー24に映し出されたa’,b’,c’点として映し出
された映像は、CCDカメラ22に取り込まれ演算装置
25によりICチップ26上面の仮想平面が算出され、
この仮想平面を基に各ボンディングワイヤ28との距離
の測定算出が行なわれる。
The image in which these three points a, b, and c are projected on the mirror 24 as points a ', b', and c'is taken into the CCD camera 22 and the IC chip is calculated by the arithmetic unit 25. 26 the virtual plane of the upper surface is calculated,
The distance to each bonding wire 28 is measured and calculated based on this virtual plane.

【0026】図3は、ICチップ26上面からボンディ
ングワイヤ28までの距離測定の中で、常に測定の要素
である高さを、一つのボンディングワイヤ28を対象例
として測定している状態を示している。
FIG. 3 shows a state in which the height, which is an element of measurement, is constantly measured in the measurement of the distance from the upper surface of the IC chip 26 to the bonding wire 28, using one bonding wire 28 as a target example. There is.

【0027】すなわち、同図の正面図ではICチップ2
6上とボンディングワイヤ28との融着部であるボール
28aの一つの底面の中央に映線を結ばせて交点をつく
り、この交点とボンディングワイヤ28の半径(J)分
の位置の交点との差を計測する。
That is, in the front view of FIG.
6. An image line is connected to the center of one bottom surface of the ball 28a, which is a fusion portion of the bonding wire 28 and the top surface of the bonding wire 28, to form an intersection point, and the intersection point and the intersection point at the position of the radius (J) of the bonding wire 28 Measure the difference.

【0028】また、同図の平面図では、ミラー24にボ
ンディングワイヤ28の側面が映し出され映線がICチ
ップ26の上面からボンディングワイヤ28の最高の位
置まで移行しいている状態が三次元的に映し出されてい
る。
Further, in the plan view of the figure, the side surface of the bonding wire 28 is projected on the mirror 24, and the projection line is three-dimensionally moved from the upper surface of the IC chip 26 to the highest position of the bonding wire 28. It is projected.

【0029】この映像をCCDカメラ22から取り込み
演算装置25でボンディングワイヤ28の高さを算出す
る(計算式(1)参照)。
This image is taken in from the CCD camera 22 and the height of the bonding wire 28 is calculated by the arithmetic unit 25 (see calculation formula (1)).

【0030】更に、ICチップ26とボンディングワイ
ヤ28との距離(L)は、前述の高さ(I)の測定と、
ミラー24に映し出された側面像からICチップ26か
らの距離(S)の測定を行って算出することができる
(計算式(2)参照)。
Further, the distance (L) between the IC chip 26 and the bonding wire 28 is measured by the above-mentioned height (I),
The distance (S) from the IC chip 26 can be measured and calculated from the side image projected on the mirror 24 (see the calculation formula (2)).

【0031】[0031]

【実施例】更に、以下のような検査方法としたことによ
り、不良率を大幅に低減することができた。
[Embodiment] Further, by adopting the following inspection method, the defect rate can be greatly reduced.

【0032】すなわち、ボンディングワイヤを45゜の
入射角でミラーに映像を捉えるとミラーの上位角度2
2.5゜とすれば平行線入力として映像解析ができ、ワ
イヤの高さ(I)は、
That is, when an image is captured on the mirror with the bonding wire at an incident angle of 45 °, the upper angle of the mirror is 2
If the angle is 2.5 °, video analysis can be performed as parallel line input, and the wire height (I) is

【0033】[0033]

【数式1】 として算出することができる。[Formula 1] Can be calculated as

【0034】また、 式にて高さを算出しながら同時
にICチップからの水平距離(S)を測定することによ
り、
By calculating the height by the formula and simultaneously measuring the horizontal distance (S) from the IC chip,

【0035】[0035]

【数式2】 の2式によりICチップからの最短距離(L)を算出す
ることができる。
[Formula 2] The shortest distance (L) from the IC chip can be calculated by the following two equations.

【0036】規格値としては、 L≦ボンディングワイ
ヤ径(2J)×2 I≦ 500 μm としており、この規格値を割り込んだ場合にはNGの判
断を出し、不良品として「除去」の作動が行えるように
なった。
As a standard value, L ≦ bonding wire diameter (2J) × 2 I ≦ 500 μm. If this standard value is interrupted, NG is judged and "removal" operation can be performed as a defective product. It became so.

【0037】[0037]

【発明の効果】本発明の請求項1に記載のボンディング
ワイヤ接続状態検査装置によれば、ミラーに映し出され
たボンディングワイヤの形状に沿うように測定できるの
で、三次元的に距離を捉えることができ、不良品はワイ
ヤボンディング後、直ちに除去できるので封止作業が入
らない。従って、封止材料が節減されると共に、作業工
数や検査工数の削減が図れる。
According to the bonding wire connection state inspection device of the first aspect of the present invention, since it is possible to measure along the shape of the bonding wire reflected on the mirror, it is possible to grasp the distance three-dimensionally. Since the defective product can be removed immediately after wire bonding, sealing work is not required. Therefore, the sealing material can be saved, and the number of work steps and inspection steps can be reduced.

【0038】本発明の請求項2に記載のボンディングワ
イヤ接続状態検査装置によれば、ICチップの仮想平面
とボンディングワイヤとの最短距離が、ミラーを使用す
ることによって、初めて三次元的に映し出され、映像を
CCDカメラで取り込み算出することができるようにな
り、ICチップとの短絡の不良が削減できると共に、工
程の改善ができた。本発明の請求項3に記載のボンディ
ングワイヤ接続状態検査装置によれば、左右から同時に
映像を捉えるかたちになるので映像形状を追いかけ易
い。従って、正確である。また、ミラーの組み付けに当
たって左右の映像を対象の位置に置くことによりミラー
角度や中心が出し易く組付けが行い易く、また調整も行
い易い。
According to the bonding wire connection state inspection device of the second aspect of the present invention, the shortest distance between the virtual plane of the IC chip and the bonding wire is three-dimensionally projected for the first time by using the mirror. , The image can be captured and calculated by the CCD camera, the short-circuit defect with the IC chip can be reduced, and the process can be improved. According to the bonding wire connection state inspection device of the third aspect of the present invention, since the images are simultaneously captured from the left and right, it is easy to follow the image shape. Therefore, it is accurate. In addition, by placing the left and right images at the target positions when assembling the mirror, the mirror angle and the center can be easily set, and the assembly and the adjustment can be easily performed.

【図面の簡単な説明】[Brief description of drawings]

【図1】 (a)は本発明の一実施例のボンディングワ
イヤ接続状態検査装置の概要図であり、(b)は(a)
図のA部拡大図である。
FIG. 1 (a) is a schematic view of a bonding wire connection state inspection device according to an embodiment of the present invention, and FIG. 1 (b) is (a).
It is an A section enlarged view of a figure.

【図2】 (a)(b)は同実施例を示すICチップの
仮想平面の測定状態を示す説明図である。
2A and 2B are explanatory views showing a measurement state of a virtual plane of an IC chip showing the same embodiment.

【図3】 同実施例を示すボンディングワイヤの高さ測
定状態を示す説明図である。
FIG. 3 is an explanatory diagram showing a state of measuring the height of the bonding wire according to the embodiment.

【図4】 従来技術のICチップとボンディングワイヤ
との結線状態例を示す平面図である。
FIG. 4 is a plan view showing a connection state example of an IC chip and a bonding wire of a conventional technique.

【符号の説明】[Explanation of symbols]

21…ボンディングワイヤ接続状態検査装置 22…CCDカメラ 24…ミラー 25…演算装置 26…ICチップ 26a…仮想平面、26b…上角線、26c…他端の上
角線 27…リードフレーム 28…ボンディングワイヤ
21 ... Bonding wire connection state inspection device 22 ... CCD camera 24 ... Mirror 25 ... Arithmetic device 26 ... IC chip 26a ... Virtual plane, 26b ... Upper corner line, 26c ... Other end upper corner line 27 ... Lead frame 28 ... Bonding wire

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ICチップ上面に溶着されたボンディン
グワイヤが、上方へ向かって延び湾曲して山なりにリー
ドフレーム面まで下がる構造物において、 前記ICチップの算出された仮想平面から前記ボンディ
ングワイヤまでの距離を測るボンディングワイヤ接続状
態検査装置であって、 前記ボンディングワイヤの湾曲状態がわかるように、ミ
ラー面にボンディングワイヤおよびICチップを映し出
すミラーをボンディングワイヤ側に配置させ、前記ボン
ディングワイヤの上方に映像を取り込むカメラと一体に
設け、該ミラーに映し出されたボンディングワイヤの形
状に沿うように測定可能とし、該測定値から仮想平面と
ボンディングワイヤとの距離を算出する演算手段を設け
たことを特徴とするボンディングワイヤ接続状態検査装
置。
1. In a structure in which a bonding wire welded to the upper surface of an IC chip extends upward and curves to form a ridge down to the lead frame surface, from a calculated virtual plane of the IC chip to the bonding wire. A bonding wire connection state inspecting apparatus for measuring a distance between the bonding wire and a mirror for projecting an IC chip on a mirror surface so that the bending state of the bonding wire can be seen, and the bonding wire is placed above the bonding wire. It is provided integrally with a camera for capturing an image, enables measurement along the shape of the bonding wire reflected on the mirror, and is provided with an arithmetic means for calculating the distance between the virtual plane and the bonding wire from the measured value. Bonding wire connection state inspection device.
【請求項2】 前記演算手段は、前記ICチップの一端
面の上角線をミラーに映し出し、該角線の両端の測定点
(a及びb)と、相対する他の端面の上角線をミラーに
映し出した該角線の略中央測定点(c)との座標位置か
ら、この三点(a,b,c)間の測定値を基にICチッ
プの仮想平面を算出すると共に、 前記ミラーに映し出されたボンディングワイヤの形状に
沿って移動する測定点の高さとICチップ仮想平面角線
からの距離とを測定し、ICチップ仮想平面とボンディ
ングワイヤとの最短距離を算出することを特徴とする請
求項1に記載のボンディングワイヤ接続状態検査装置。
2. The calculation means projects an upper corner line of one end surface of the IC chip on a mirror, and displays measurement points (a and b) at both ends of the corner line and an upper corner line of the other end surface. The virtual plane of the IC chip is calculated based on the measured values between the three points (a, b, c) from the coordinate position of the angle line projected on the mirror and the substantially central measurement point (c), and the mirror The shortest distance between the virtual plane of the IC chip and the bonding wire is calculated by measuring the height of the measurement point that moves along the shape of the bonding wire projected on the screen and the distance from the angle line of the virtual plane of the IC chip. The bonding wire connection state inspection device according to claim 1.
【請求項3】 前記ミラーユニットのミラーは左右一対
に設け回転可能な構成としたことを特徴とする請求項1
又は2に記載のボンディングワイヤ接続状態検査装置。
3. The mirror of the mirror unit is provided in a pair of left and right to be rotatable.
Or the bonding wire connection state inspection device according to item 2.
JP7224249A 1995-08-31 1995-08-31 Bonding wire connection state inspecting instrument Pending JPH0968405A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7224249A JPH0968405A (en) 1995-08-31 1995-08-31 Bonding wire connection state inspecting instrument

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7224249A JPH0968405A (en) 1995-08-31 1995-08-31 Bonding wire connection state inspecting instrument

Publications (1)

Publication Number Publication Date
JPH0968405A true JPH0968405A (en) 1997-03-11

Family

ID=16810826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7224249A Pending JPH0968405A (en) 1995-08-31 1995-08-31 Bonding wire connection state inspecting instrument

Country Status (1)

Country Link
JP (1) JPH0968405A (en)

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