CN116682888B - Chip flip interconnection failure repairing method - Google Patents
Chip flip interconnection failure repairing method Download PDFInfo
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- CN116682888B CN116682888B CN202310700091.9A CN202310700091A CN116682888B CN 116682888 B CN116682888 B CN 116682888B CN 202310700091 A CN202310700091 A CN 202310700091A CN 116682888 B CN116682888 B CN 116682888B
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000003466 welding Methods 0.000 claims abstract description 163
- 238000001514 detection method Methods 0.000 claims abstract description 33
- 238000012360 testing method Methods 0.000 claims abstract description 14
- 230000004907 flux Effects 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 23
- 229910000679 solder Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a flip chip interconnection failure repairing method, and relates to the technical field of semiconductors. The invention adsorbs a detection component with failed flip-chip interconnection to a pressure welding platform of a flip-chip welding machine, wherein the detection component comprises a detector chip, a read-out circuit chip and welding flux, wherein the read-out circuit chip is interconnected with the detector chip; adsorbing a pressure welding plate to a welding arm of the flip-chip welding machine; the blind pixel parameters of the detection assembly are identified, and the press-welding pose of the press-welding plate is adjusted according to the blind pixel parameters; setting welding parameters; and repair welding operation is performed and testing is performed, so that scrapping caused by blind pixels can be repaired, and the manufacturing cost and the production time cost of the infrared detector are saved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a flip chip interconnection failure repairing method.
Background
Infrared focal plane detectors are devices that convert infrared radiant energy into electrical energy or other physical quantities, and are classified into infrared quantum detection (photovoltaic effect, photovoltaic type) and thermal detection (thermoelectric effect, photoconductive type).
The infrared focal plane detector is widely applied to the fields of infrared thermal imaging, infrared remote sensing, search and rescue and the like. The flip-chip interconnection technology is one of key technologies for preparing an infrared focal plane detector, and the main technological process is that an infrared detector chip and a read-out circuit chip are pressed and welded together through an indium column, so that an optical signal detected by the infrared detector is processed and output through the read-out circuit chip.
In the actual production process, on one hand, the surface of the detector chip is not an ideal plane, so that the surfaces of the detector chip and the read-out circuit chip cannot be adjusted to be parallel to each other, and further, when the detector chip and the read-out circuit chip are interconnected, a certain angle or a certain side of the detector chip fails to be interconnected, and after the interconnection failure, large-area blind pixels are generated, so that the chip is scrapped; on the other hand, since the flip-chip interconnected chips are difficult to re-separate, even if separated, the indium columns are damaged and contaminate the detection surface, disabling the detector chip and the readout circuit chip, increasing the manufacturing cost and manufacturing time of the infrared detector.
Disclosure of Invention
The embodiment of the invention provides a chip flip interconnection failure repairing method, which can repair a chip generating blind pixels and reduce the chip rejection rate of an infrared detector.
The embodiment of the application provides a flip chip interconnection failure repairing method, which comprises the following steps:
adsorbing a detection assembly with failed flip-chip interconnection to a pressure welding platform of a flip-chip welding machine, wherein the detection assembly comprises a detector chip, a read-out circuit chip and welding flux, wherein the read-out circuit chip is interconnected with the detector chip;
adsorbing a pressure welding plate to a welding arm of the flip-chip welding machine;
the blind pixel parameters of the detection assembly are identified, and the press-welding pose of the press-welding plate is adjusted according to the blind pixel parameters;
setting welding parameters;
and performing repair welding operation and testing.
In one embodiment, the attaching the bonding pad to the bonding arm of the flip-chip bonding machine further comprises: and moving the pressure welding platform to enable the detection assembly to be located right below the pressure welding plate, and enabling the edge of the detection assembly to be parallel to the edge of the pressure welding plate.
In one embodiment, the blind pixel parameters include a blind pixel position and a blind pixel area, and the adjusting the welding pose of the welding plate according to the blind pixel parameters includes: the pressure welding plate is parallel to the surface of the reading circuit chip by adjusting the universal ball shaft of the welding arm; and adjusting the pressure welding plate to a target inclination angle according to the blind pixel position and the blind pixel area so that the height of the pressure welding plate at the position corresponding to the blind pixel is lower than other positions on the pressure welding plate.
In one embodiment, the adjusting the universal ball axis of the soldering arm makes the bonding pad parallel to the surface of the readout circuit chip, specifically: and adjusting the universal ball axis until the reflection light spot reflected by the pressure welding plate moves to the center of the screen, so that the pressure welding plate is parallel to the surface of the reading circuit chip.
In one embodiment, the adjusting the bonding pad to a target inclination angle according to the blind pixel position and the blind pixel area includes: determining a target inclination direction of the pressure welding plate based on the position of the blind pixel; determining the target inclination angle based on the blind pixel area, the blind pixel position and a preset gap function; and adjusting the inclination angle of the pressure welding plate to the target inclination angle.
In one embodiment, the determining the target inclination angle based on the blind pixel area, the blind pixel position, and a preset gap function includes: obtaining a blind pixel gap based on the blind pixel area and a preset gap function; calculating based on the blind pixel positions to obtain blind pixel center distances of the blind pixels; and calculating based on the blind pixel gap and the blind pixel center distance to obtain the target inclination angle.
In one embodiment, the adjusting the inclination angle of the bonding pad to the target inclination angle includes: calculating based on the target inclination angle and a preset spot inclination angle function to obtain a target spot azimuth; decomposing the target light spot azimuth into a transverse movement azimuth and a longitudinal movement azimuth; and moving the reflection light spot of the pressure welding plate to the target light spot position based on the transverse movement position and the longitudinal movement position.
In one embodiment, the setting welding parameters includes: setting a press welding distance of the welding arm based on the blind pixel gap; setting a welding pressure to a preset welding pressure; setting the welding temperature to a preset welding temperature.
In one embodiment, the performing repair welding operation and testing includes: operating the welding arm to move downwards according to the pressure welding distance so as to implement repair welding operation; and testing the detection assembly after repair welding to determine whether the detection assembly is qualified or not.
In one embodiment, the bonding plate is one of a ceramic wafer, a silicon wafer, a germanium wafer, and a sapphire wafer, and the bonding plate has an area larger than that of the detector chip.
Compared with the prior art, the embodiment of the application adsorbs the detection component with failed flip-chip interconnection to the pressure welding platform of the flip-chip welding machine, wherein the detection component comprises a detector chip, a read-out circuit chip and welding flux, wherein the read-out circuit chip is interconnected with the detector chip; adsorbing a pressure welding plate to a welding arm of the flip-chip welding machine; the blind pixel parameters of the detection assembly are identified, and the press-welding pose of the press-welding plate is adjusted according to the blind pixel parameters; setting welding parameters; and repair welding operation is performed and testing is performed, so that scrapping caused by blind pixels can be repaired, and the manufacturing cost and the production time cost of the infrared detector are saved.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of flip chip bonding according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of flip chip bonding and pressure bonding states according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a detection assembly for weld failure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating an adjustment state of a flip-chip bonding machine according to an embodiment of the present invention;
FIG. 5 is a flow chart of a flip-chip interconnect failure repair method according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a detection component according to an embodiment of the present invention for detecting blind pixels;
FIG. 7 is a schematic diagram of a detection assembly for detecting pass according to an embodiment of the present invention;
fig. 8 is a schematic cross-sectional view of a blind pixel according to an embodiment of the present invention;
fig. 9 is a diagram illustrating an assistance calculation for moving distance of a reflected light spot according to an embodiment of the present invention.
Reference numerals:
10. flip-chip welding machine; 110. a welding arm; 120. a pressure welding platform; 20. a detection assembly; 210. a detector chip; 220. solder; 230. a read-out circuit chip; 240. blind pixels; 30. and (5) pressing and welding the plate.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, flip-chip interconnection is a process that relies on flip-chip bonding 10 to perform a bonding operation, and includes the following main steps: the indium column of the read-out circuit chip 230 is upwards placed on a vacuum suction hole in the center of the pressure welding platform 120 of the flip-chip bonding machine 10, and the read-out circuit chip 230 is fixed on the pressure welding platform 120 in a vacuum suction mode; the detector chip 210 is placed on a sample rack beside the pressure welding platform 120 with the front face downward, and the detector chip 210 is sucked up through the welding arm 110; moving the bonding stage 120 under the bonding arm 110, observing by a microscope, and then operating the flip-chip bonding machine 10 to align the probe chip 210 with the alignment mark on the readout circuit chip 230; adjusting the gimbal axes on the solder arms 110 so that the front face of the detector chip 210 is parallel to the front face of the readout circuitry chip 230; as shown in fig. 2, parameters such as interconnect pressure, interconnect temperature, and time are set, and the bonding arm 110 is manipulated to move downward to bond the probe chip 210 and the readout circuit chip 230 together.
It is known from the flip-chip interconnection process that making the front side of the detector chip 210 parallel to the surface of the readout circuit chip 230 is critical to the success of the flip-chip interconnection. As shown by the arrows in fig. 1, the flip-chip bonding machine 10 converts one beam of light into two opposite beams of light after refraction by a prism, and directs the two beams of light perpendicularly to the surfaces of the detector chip 210 and the readout circuit chip 230, respectively, so as to display the reflected spots of the two beams of light on a computer screen. Since the bonding stage 120 can only move horizontally and cannot tilt, the reflected light spot of the readout circuit chip 230 is fixed at the center of the screen and cannot move; the solder arm 110 is provided with a gimbal shaft, and the gimbal shaft can be freely adjusted in direction, so that the reflected light spot of the detector chip 210 can be moved by adjusting the gimbal shaft. When the reflected light spot of the detector chip 210 coincides with the reflected light spot of the readout circuit chip 230, it is ensured that the two soldering planes are parallel.
However, in the actual production process, on one hand, since the surface of the detector chip 210 is not an ideal plane, the surfaces of the detector chip 210 and the readout circuit chip 230 cannot be aligned parallel to each other, so that when the detector chip 210 and the readout circuit chip 230 are interconnected, a certain angle or a certain edge of the detector chip 210 fails to be interconnected, and after the interconnection failure, large-area blind pixels are generated, so that the chip is scrapped; on the other hand, since the flip-chip-interconnected chips are difficult to re-separate, even if separated, the indium columns may be damaged while contaminating the detection surface, disabling the detector chip 210 and the readout circuit chip 230, increasing the manufacturing cost and manufacturing time of the infrared detector.
In order to solve the above technical problem, as shown in fig. 5, in a first aspect, at least one embodiment of the present application provides a method for repairing failed flip chip interconnection, including:
s101: adsorbing a probe assembly 20 with failed flip-chip interconnection to a bonding stage 120 of a flip-chip bonding machine 10, wherein the probe assembly 20 comprises a probe chip 210, a readout circuit chip 230 interconnected with the probe chip 210, and a solder 220;
it should be noted that, the repair method for failed flip-chip interconnection provided in this embodiment still uses the original flip-chip bonding machine 10 to repair, and no new equipment is required to be added, so that repair cost can be effectively reduced.
S102: adsorbing the pressure welding plate 30 onto the welding arm 110 of the flip-chip bonding machine 10;
it should be noted that the detection assembly 20 that fails in welding is usually placed on a rack, so that it needs to be removed from the rack for subsequent operations when repairing.
In some embodiments, the attaching the bonding pad 30 to the bonding arm 110 of the flip-chip bonding machine 10 further comprises: the bonding stage 120 is moved so that the probe assembly 20 is located directly below the bonding pad 30 and so that the edge of the probe assembly 20 is parallel to the edge of the bonding pad.
It should be noted that, when repairing the probe assembly 20, the probe assembly 20 with failed interconnection is located directly under the bonding plate 30 by adjusting the position of the bonding stage 120, and the shape of the bonding plate 30 is generally the same as the shape of the probe assembly 20 or the probe chip 210, for example, both the shape of the probe assembly and the shape of the probe chip are square or rectangular, so as to perform subsequent repair welding operations.
S103: identifying blind pixel parameters of the detection assembly 20, and adjusting the press-welding pose of the press-welding plate 30 according to the blind pixel parameters;
in some embodiments, the blind pixel parameters include a blind pixel position and a blind pixel area, and the adjusting the bonding pose of the bonding pad 30 according to the blind pixel parameters includes: the bonding pad 30 is parallel to the surface of the readout circuit chip 230 by adjusting the gimbal axes of the bonding arms 110; and adjusting the pressure welding plate 30 to a target inclination angle according to the blind pixel position and the blind pixel area so that the height of the pressure welding plate 30 at the position corresponding to the blind pixel is lower than that of other positions on the pressure welding plate 30.
It should be noted that, before performing the repair welding operation, the blind pixel position and the blind pixel area of the blind pixel 240 on the detecting assembly 20 need to be found first, so that the relevant parameters of the flip-chip bonding machine 10 are adjusted according to the blind pixel position, as shown in fig. 3 and 6, the blind pixel position is usually at a certain angle or a certain edge of the detector chip 210, and the blind pixel parameter may also include the number of blind pixels, so as to perform repair welding for each blind pixel.
It should be noted that, since the bonding stage 120 can only move horizontally, the gimbal axes disposed on the bonding arms 110 need to be adjusted to align the bonding plate 30 with the surface of the readout circuit chip 230, as shown in fig. 4, and then the adjustment needs to be continued after the leveling of the bonding plate 30 with the surface of the readout circuit chip 230, so that the height of the bonding plate 30 at the position corresponding to the blind pixel 240 is lower than that of the other positions on the bonding plate 30, for example, when the position of the blind pixel 240 is located at the lower left of the screen, as shown in fig. 6, the reflective light spot of the bonding plate 30 can be moved to the lower left of the screen center, and the movement distance is generally about 1/3-1/2 of the light spot diameter, and at this time, the state of the bonding plate 30 is changed to incline to the lower left of the detector chip 210 to correspond to the position of the blind pixel 240. In addition, the inclination angle shown in fig. 4 is a schematic view, and in the actual interconnection process, the horizontal adjustment angle of the universal ball axis is small and cannot be distinguished by naked eyes.
In some embodiments, the bonding pad 30 is parallel to the surface of the readout circuit chip 230 by adjusting the universal ball axis of the bonding arm 110, specifically: the gimbal axes are adjusted until the reflected light spot reflected by the bonding pad 30 moves to the center of the screen so that the bonding pad 30 is parallel to the surface of the readout circuit chip 230.
In the aspect of making the bonding pad 30 parallel to the surface of the readout circuit chip 230, as shown in fig. 1, the flip-chip bonding machine 10 adopts a method of refracting one beam of light through a prism, then converting the refracted light into two beams of light with opposite directions, and directing the two beams of light perpendicularly to the surfaces of the detector chip 210 and the readout circuit chip 230, respectively, so as to display reflection spots of the two beams of light on a computer screen. When the reflected light spot of the detector chip 210 is overlapped with the reflected light spot of the readout circuit chip 230, the surface of the detector chip 210 is parallel to the surface of the readout circuit chip 230, and the pressure welding platform 120 can only move horizontally and cannot tilt, so that the reflected light spot of the readout circuit chip 230 is fixed at the center of the screen and cannot move; the gimbal shaft is provided on the welding arm 110 to freely adjust the direction, so that the reflected light spot of the detector chip 210 can be moved by adjusting the gimbal shaft. When the reflected light spot of the detector chip 210 coincides with the reflected light spot of the readout circuit chip, it is ensured that the two soldering planes are parallel.
In some embodiments, the adjusting the bonding pad 30 to a target inclination angle according to the blind pixel position and the blind pixel area includes: determining a target tilting direction of the bonding pad 30 based on the position of the blind pixel; determining the target inclination angle based on the blind pixel area, the blind pixel position and a preset gap function; the inclination angle of the bonding pad 30 is adjusted to the target inclination angle.
In some embodiments, the determining the target tilt angle based on the blind pixel area, the blind pixel position, and a preset gap function includes: obtaining a blind pixel gap based on the blind pixel area and a preset gap function; calculating based on the blind pixel positions to obtain blind pixel center distances of the blind pixels 240; and calculating based on the blind pixel gap and the blind pixel center distance to obtain the target inclination angle.
It should be noted that, for example, when the blind pixel position is located at the lower left corner, as shown in fig. 6, it may be determined that the bonding pad 30 is inclined to the lower left, wherein the lower left is the target inclination direction.
It should be noted that, in general, the blind pixel area will not exceed 10% of the total area of the detector chip 210 when the flip-chip interconnection fails, and if the blind pixel area exceeds 10%, it indicates that there is a significant defect on the chip surface, and no repair is necessary, which is found by analysis and measurement of the failure sample: when the blind pixel area is smaller than 5% of the total area of the detector chip 210, the gap between the solder apex and the detector chip 210 is not larger than 0.5 μm, and the maximum value is at the position farthest from the center of the detector chip 210 and is smaller as approaching the center of the detector chip 210; when the blind pixel area occupies 5% -10% of the total area of the detector chip 210, the gap between the solder vertex and the detector chip 210 is not more than 1 micron, and the maximum value is at the position farthest from the center of the detector chip 210 and is smaller as the blind pixel area approaches the center; from the above findings, the preset gap function may be a piecewise function, that is, when the blind pixel area occupies 5% -10% of the total area of the detector chip 210, the blind pixel gap is 1 μm; when the blind pixel area is less than 5% of the total area of the detector chip 210, the blind pixel gap is 0.5 μm, whereby the blind pixel gap D can be determined.
After the blind pixel position is obtained, the blind pixel center distance L of the center of the blind pixel distance detector chip 210 can be determined according to the blind pixel position, as shown in fig. 8, the target inclination angle can be obtained according to the trigonometric function relationship by using the blind pixel center distance L and the blind pixel gap D, and when the blind pixel center distance L is 7.8 millimeters and the blind pixel area occupies 4% of the total area of the detector chip 210, the blind pixel gap D is 0.5 micrometer (the maximum value is at the lower left corner of the detector chip 210, and the closer the maximum value is to the center, the smaller the gap is), and the target inclination angle can be obtained at this time to be 0.0037 °, that is, the target inclination angle can be achieved by deflecting the universal ball axis of the flip-chip welder 10 by 0.0037 °.
In some embodiments, the adjusting the inclination angle of the bonding pad 30 to the target inclination angle includes: calculating based on the target inclination angle and a preset spot inclination angle function to obtain a target spot azimuth; decomposing the target light spot azimuth into a transverse movement azimuth and a longitudinal movement azimuth; the reflected spot of the bonding pad 30 is moved to the target spot orientation based on the lateral movement orientation and the longitudinal movement orientation.
It should be noted that the preset spot inclination function may be different according to different flip-chip bonding machines, and typically, the reflected spot of the flip-chip bonding machine has an angular deflection of 0.00057 ° (i.e. the preset spot inclination function), and as shown in fig. 9, for example, in order to achieve a deflection of 0.0037 °, the reflected spot needs to be moved by 7 units, but the movement distance of 7 units is moved to the lower left, and in practical operation, the reflected spot can only be moved left, right or up and down, so that the 7 units of distance needs to be converted into the leftward and downward movement distances (i.e. the lateral movement azimuth, the longitudinal movement azimuth). Here, according to the pythagorean theorem, it is known that: (6X) 2 +(5X) 2 ＝7 2 When x=0.9 is obtained according to the formula, if 6x=5.4 is rounded to 6, and if 5x=4.5 is rounded to 5, the reflection spot needs to be moved to the left by 6 units and then moved downward by 5 units for the case of fig. 9, and the target tube plate orientation can be reached.
S104: setting welding parameters;
in some embodiments, the setting welding parameters includes: setting a press-welding distance of the welding arm 110 based on the blind pixel gap; setting a welding pressure to a preset welding pressure; setting the welding temperature to a preset welding temperature.
It should be noted that, since the repair welding operation is only to weld a partial area of the probe assembly 20, the welding pressure and the welding temperature used in the repair welding operation are generally different from those in normal welding, the preset welding pressure is generally 1/4 to 1/3 of that in normal welding, the preset welding temperature is 80-120 ℃, the connection between the solder 220 and the probe chip 210 is facilitated at the preset welding pressure and the preset welding temperature, and other welding parameters are the same as those in normal welding.
It should be noted that, since the repair welding operation is only performed for the blind pixels, when repair welding is performed, a distance for the welding arm 110 to move downwards may be set, and the press welding distance may include a distance between the press welding plate 30 and the detector chip 210 and a blind pixel gap, or may include only the blind pixel gap, where the distance between the press welding plate 30 and the detector chip 210 may be measured by a sensor, the blind pixel gap is obtained by a preset gap function, and repair of the blind pixels may be ensured by setting the press welding distance, and damage may not occur to a well-welded portion on the detector chip 210.
S105: and performing repair welding operation and testing.
In some embodiments, the performing repair welding operations and testing includes: operating the welding arm 110 to move downward according to the bonding distance to perform repair welding operation; the repair welded probe assembly 20 is tested to determine if it is acceptable.
It should be noted that, after the flip-chip bonding machine 10 is adjusted, the bonding pressure and the bonding temperature are set, and then the repair bonding operation is performed, when the repair bonding operation is performed, the bonding arm 110 is generally operated to move downward to bond the probe chip 210, as shown in fig. 4, since the bonding plate 30 is inclined downward to the left, the bonding plate 30 is adjusted to the target inclination angle, during the bonding process, the lower left corner (i.e. the position of the blind pixel 240) of the probe chip 210 is contacted first, and deformation is generated after the lower left corner is stressed, and moves downward to connect with the solder 220 below, so as to form a communicating state. After the repair welding operation is completed, the repair welded probe assembly 20 can be tested, and if the test chart is shown in fig. 7, the test is qualified, and the test is a qualified probe assembly 20.
It should be noted that, the welding parameters, such as the welding pressure and the welding temperature, may be adjusted according to the area of the blind pixel 240, if the area of the blind pixel 240 is larger, the welding pressure and/or the welding temperature may be correspondingly increased, and if the area of the blind pixel 240 is smaller, the welding pressure and/or the welding temperature may be correspondingly reduced, so as to complete the repair welding operation more safely and reliably.
In some embodiments, the bonding pad 30 is one of a ceramic wafer, a silicon wafer, a germanium wafer, and a sapphire wafer, and the bonding pad 30 has an area that is larger than the area of the detector chip 210.
It should be noted that, the bonding plate 30 is usually leveled, polished and polished to ensure good flatness and glossiness of the bonding plate 30, and the bonding plate 30 is preferably a ceramic plate because the ceramic plate has the characteristics of hardness and difficult deformation.
The solder 220 may be an indium pillar, and is soft in texture, strong in plasticity, high in ductility, and easy to be pressed into a sheet. Indium columns may be used as solder 220 to facilitate soldering of the detector chip 210 to the readout circuit chip 230.
The embodiment of the application is characterized in that a detection component with failed flip-chip interconnection is adsorbed to a pressure welding platform of a flip-chip welding machine, wherein the detection component comprises a detector chip, a read-out circuit chip which is interconnected with the detector chip and solder; adsorbing a pressure welding plate to a welding arm of the flip-chip welding machine; the blind pixel parameters of the detection assembly are identified, and the press-welding pose of the press-welding plate is adjusted according to the blind pixel parameters; setting welding parameters; and repair welding operation is performed and testing is performed, so that scrapping caused by blind pixels can be repaired, and the manufacturing cost and the production time cost of the infrared detector are saved.
While the invention has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the technical features mentioned in the respective embodiments may be combined in any manner as long as there is no structural conflict. The present invention is not limited to the specific embodiments disclosed herein, but encompasses all technical solutions falling within the scope of the claims.
Claims (10)
1. The flip chip interconnection failure repairing method is characterized by comprising the following steps of:
adsorbing a detection assembly with failed flip-chip interconnection to a pressure welding platform of a flip-chip welding machine, wherein the detection assembly comprises a detector chip, a read-out circuit chip and welding flux, wherein the read-out circuit chip is interconnected with the detector chip;
adsorbing a pressure welding plate to a welding arm of the flip-chip welding machine;
the blind pixel parameters of the detection assembly are identified, and the press-welding pose of the press-welding plate is adjusted according to the blind pixel parameters;
setting welding parameters;
and performing repair welding operation and testing.
2. The flip-chip interconnect failure repair method of claim 1, wherein the attaching a bond pad to a bond arm of the flip-chip bonding machine further comprises:
and moving the pressure welding platform to enable the detection assembly to be located right below the pressure welding plate, and enabling the edge of the detection assembly to be parallel to the edge of the pressure welding plate.
3. The flip-chip interconnection failure repair method of claim 1, wherein the blind pixel parameters comprise a blind pixel position and a blind pixel area;
the adjusting the press-welding pose of the press-welding plate according to the blind pixel parameters comprises the following steps:
the pressure welding plate is parallel to the surface of the reading circuit chip by adjusting the universal ball shaft of the welding arm;
and adjusting the pressure welding plate to a target inclination angle according to the blind pixel position and the blind pixel area so that the height of the pressure welding plate at the position corresponding to the blind pixel is lower than other positions on the pressure welding plate.
4. The flip-chip interconnect failure repair method of claim 3, wherein the adjusting the universal ball axis of the bonding arm to make the bonding pad parallel to the surface of the readout circuit chip specifically comprises:
and adjusting the universal ball axis until the reflection light spot reflected by the pressure welding plate moves to the center of the screen, so that the pressure welding plate is parallel to the surface of the reading circuit chip.
5. The flip-chip interconnect failure repair method of claim 3, wherein the adjusting the bonding pad to a target tilt angle according to the blind pixel position and the blind pixel area comprises:
determining a target inclination direction of the pressure welding plate based on the position of the blind pixel;
determining the target inclination angle based on the blind pixel area, the blind pixel position and a preset gap function;
and adjusting the inclination angle of the pressure welding plate to the target inclination angle.
6. The flip-chip interconnect failure repair method of claim 5, wherein the determining the target tilt angle based on the blind pixel area, the blind pixel position, and a preset gap function comprises:
obtaining a blind pixel gap based on the blind pixel area and a preset gap function;
calculating based on the blind pixel positions to obtain blind pixel center distances of the blind pixels;
and calculating based on the blind pixel gap and the blind pixel center distance to obtain the target inclination angle.
7. The flip-chip interconnect failed rework method of claim 6, wherein the adjusting the tilt angle of the bonding pad to the target tilt angle comprises:
calculating based on the target inclination angle and a preset spot inclination angle function to obtain a target spot azimuth;
decomposing the target light spot azimuth into a transverse movement azimuth and a longitudinal movement azimuth;
and moving the reflection light spot of the pressure welding plate to the target light spot position based on the transverse movement position and the longitudinal movement position.
8. The flip-chip interconnect failure repair method of claim 6, wherein the setting the soldering parameters comprises:
setting a press welding distance of the welding arm based on the blind pixel gap;
setting a welding pressure to a preset welding pressure;
setting the welding temperature to a preset welding temperature.
9. The flip-chip interconnect failure repair method of claim 8, wherein performing repair welding operations and testing comprises:
operating the welding arm to move downwards according to the pressure welding distance so as to implement repair welding operation;
and testing the detection assembly after repair welding to determine whether the detection assembly is qualified or not.
10. The flip-chip interconnect failure repair method of claim 1, wherein the bonding pad is one of a ceramic wafer, a silicon wafer, a germanium wafer, and a sapphire wafer, and the bonding pad has an area larger than an area of the detector chip.
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