JPH08335612A - Prober and its method - Google Patents

Prober and its method

Info

Publication number
JPH08335612A
JPH08335612A JP6085759A JP8575994A JPH08335612A JP H08335612 A JPH08335612 A JP H08335612A JP 6085759 A JP6085759 A JP 6085759A JP 8575994 A JP8575994 A JP 8575994A JP H08335612 A JPH08335612 A JP H08335612A
Authority
JP
Japan
Prior art keywords
probe
substrate
image pickup
pickup means
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6085759A
Other languages
Japanese (ja)
Other versions
JP2986141B2 (en
Inventor
Motohiro Kuji
基弘 久慈
Shinji Akaike
伸二 赤池
Haruhiko Yoshioka
晴彦 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Yamanashi Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Yamanashi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP6085759A priority Critical patent/JP2986141B2/en
Application filed by Tokyo Electron Ltd, Tokyo Electron Yamanashi Ltd filed Critical Tokyo Electron Ltd
Priority to DE69533910T priority patent/DE69533910T2/en
Priority to EP95104818A priority patent/EP0675366B1/en
Priority to US08/414,590 priority patent/US5585738A/en
Priority to KR1019950007253A priority patent/KR100296646B1/en
Priority to TW084103365A priority patent/TW278140B/zh
Priority to US08/634,675 priority patent/US5640101A/en
Publication of JPH08335612A publication Critical patent/JPH08335612A/en
Application granted granted Critical
Publication of JP2986141B2 publication Critical patent/JP2986141B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To provide a prober capable of positioning between a probe and an electrode by a method wherein a prove position of a probe card is acquired as coordinates by first imaging means, and the first imaging means and second imaging means are positioned by a savable target, and a position of the elec trode of a substrate is acquired as coordinates by the second imaging means, and a position of the electrode with respect to the position of probe is acquired; and a probe method. CONSTITUTION: The position of a probe 2 of a probe card 1 is acquired as coordinates from imaging information of first imaging means 3, and the position of this first imaging means 3 is made coincident with the position of second imaging means 4 so that an electrode position of a wafer 5 is acquired by the second imaging means 4, and the position of electrode of the wafer 5 corresponding to the position of the probe 2 is calculated, and alignment of the probe 2 with the electrode is performed to inspect the wafer 5.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用の分野】本発明は、基板、特に半導体ウ
エハまたはLCD基板の電極にプロ−ブを電気的に接続
して電気的特性を検査するプロ−ブ装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe apparatus for electrically connecting a probe to an electrode of a substrate, particularly a semiconductor wafer or an LCD substrate, to inspect electrical characteristics.

【0002】[0002]

【従来の技術】従来、ウエハ対向面にプロ−ブカ−ドを
配置し、ウエハ側からプロ−ブの先端を撮像する第1撮
像手段と、プロ−ブ側からウエハ面を撮像する第2撮像
手段とを備えてウエハとプロ−ブの位置合わせをする技
術は、特開平1−94631および特開平1−1190
36等公報に記載されている。
2. Description of the Related Art Conventionally, a probe card is arranged on a surface facing a wafer, and a first imaging means for imaging the tip of the probe from the wafer side and a second imaging means for imaging the wafer surface from the probe side. A technique for aligning a wafer and a probe by using a means is disclosed in JP-A-1-94631 and JP-A-11190.
36, etc.

【0003】[0003]

【発明が解決しょうとする課題】従来のプロ−ブ装置に
おいては、プロ−ブカ−ドの取付位置精度やウエハの位
置合わせに対するXYZステ−ジの位置精度は、絶対精
度を要求する発想であった。例えば、ウエハを撮像する
位置と、実際に基板を検査する位置はかなり離れてお
り、その位置関係は、XYZステ−ジが保証するしかな
い。しかしながら、ウエハの電極の位置にプロ−ブを位
置合わせする時、XYステ−ジをガイドするレ−ルの真
直度、平坦度、直交度等を精度良く形成しても、温度が
変化すれば熱変形が発生し誤差が生じてしまう。更に、
上記XYZステ−ジを駆動させる為のボ−ルネジの熱伸
縮により、温度が例えば、10℃変化した時、100ミ
リ当たり20乃至30ミクロンの誤差を生じてしまう。
また、ヘッドプレ−トに装着されたプロ−ブカ−ドと、
ウエハを撮像する撮像部との位置関係に於いても、温度
変化によるミクロン単位のズレを保証させることが困難
であった。また、他の原因、例えば、基板の品種に応じ
てプロ−ブカ−ドを差し替えることが通例になっている
が、この時ヘッドプレ−トの中空部内径とプロ−ブカ−
ド外径との間隙により、プロ−ブカ−ドを差し替えるた
びに位置がずれる。これらのズレはプロ−ブとウエハの
電極との位置合わせを困難にしている。
In the conventional probe apparatus, the precision of the probe card mounting position and the precision of the XYZ stage relative to the alignment of the wafer are concepts that require absolute precision. It was For example, the position where the image of the wafer is picked up and the position where the substrate is actually inspected are considerably separated, and the positional relationship can only be guaranteed by the XYZ stage. However, when the probe is aligned with the position of the electrode on the wafer, even if the straightness, flatness, orthogonality, etc. of the rail for guiding the XY stage are accurately formed, if the temperature changes. Thermal deformation occurs and errors occur. Furthermore,
Due to the thermal expansion and contraction of the ball screw for driving the XYZ stage, an error of 20 to 30 μm per 100 mm occurs when the temperature changes by 10 ° C., for example.
Also, a probe card mounted on the head plate,
In terms of the positional relationship with the image pickup unit for picking up an image of the wafer, it was difficult to ensure a deviation in the unit of micron due to the temperature change. Also, it is customary to replace the probe card according to other causes, for example, depending on the type of substrate. At this time, the inner diameter of the hollow portion of the head plate and the probe card are replaced.
Due to the gap with the outer diameter of the probe, the position shifts every time the probe card is replaced. These deviations make it difficult to align the probe with the electrodes on the wafer.

【0004】本発明の目的は、先ず第1撮像手段により
プロ−ブカ−ドのプロ−ブの位置を座標として求め、次
にタ−ゲットにより第1撮像手段と第2撮像手段の位置
関係を求め、続いて第2撮像手段により基板に形成され
た電極の位置を座標として求めることにより、上記プロ
−ブと基板の電極との位置合わせを相対的に行い、高精
度な位置合わせを可能にしたプロ−ブ装置及びプロ−ブ
方法を提供することにある。
An object of the present invention is to first obtain the position of the probe of the probe card as coordinates by the first image pickup means, and then use the target to determine the positional relationship between the first image pickup means and the second image pickup means. Then, the position of the electrode formed on the substrate by the second image pickup means is calculated as the coordinate, and the position of the probe and the electrode of the substrate are relatively aligned to enable highly accurate alignment. Another object of the present invention is to provide a probe device and a probe method.

【0005】[0005]

【課題を解決するための手段】本発明のプロ−ブ装置
は、プロ−ブが設けられたプロ−ブカ−ドを基板の対向
面に配設し、上記プロ−ブを撮像する第1撮像手段およ
び上記基板を撮像する第2撮像手段により、上記プロ−
ブおよび上記基板の位置合わせを行うプロ−ブ装置にお
いて、上記基板とプロ−ブの間にタ−ゲットを設けて上
記第1と第2撮像手段との位置合わせを行った後、上記
タ−ゲットを上記位置から退避する構成にした。
A probe device of the present invention is a first image pickup device for picking up an image of the probe by disposing a probe card provided with a probe on the opposite surface of a substrate. Means and second imaging means for imaging the substrate,
In a probe device for aligning the probe and the substrate, a target is provided between the substrate and the probe to align the first and second image pickup means, and then the target. The get is retracted from the above position.

【0006】また、本プロ−ブ装置は、水平方向及び上
下方向に移動可能なステ−ジ上に周回転可能な載置台を
設け、この載置台に載置された基板の対向面にプロ−ブ
カ−ドを配設し、プロ−ブを撮像する第1撮像手段と上
記基板を撮像する第2撮像手段と、上記基板とプロ−ブ
の間に退避可能に設けたタ−ゲットにより、上記プロ−
ブと上記基板の位置合わせを行うプロ−ブ装置におい
て、上記ステ−ジの周回転しない部分に上記第1撮像手
段及び退避可能なタ−ゲットを設けた。
Further, the present probe apparatus is provided with a mounting table which can be rotated around on a stage which can be moved in the horizontal and vertical directions, and the probe is mounted on the opposing surface of the substrate mounted on the mounting table. The first image pickup means for picking up an image of the probe, the second image pickup means for picking up the board, and the target removably provided between the board and the probe Professional
In a probe device for aligning the position of the substrate and the substrate, the first image pickup means and the retractable target are provided in a portion of the stage which does not rotate.

【0007】また、本プロ−ブ装置は、プロ−ブが設け
られたプロ−ブカ−ドを基板の対向面に配設し、上記プ
ロ−ブを撮像する第1撮像手段と上記基板を撮像する第
2撮像手段により、上記プロ−ブと上記基板との位置合
わせを行うプロ−ブ装置において、上記第1撮像手段は
プロ−ブカ−ドに対して水平及び上下方向に移動する移
動機構側に設け、上記第2撮像手段はプロ−プロ−ブカ
−ドに対してX,Y何れか一軸方向に移動する移動機構
に設けた。
In the present probe apparatus, a probe card provided with a probe is arranged on the opposite surface of the substrate, and the first image pickup means for picking up the image of the probe and the substrate are picked up. In the probe apparatus for aligning the probe and the substrate by the second image pickup means, the first image pickup means is a moving mechanism side that moves horizontally and vertically with respect to the probe card. The second image pickup means is provided in a moving mechanism that moves in either the X-axis or the Y-axis direction with respect to the probe card.

【0008】また、本プロ−ブ装置は、プロ−ブが設け
られたプロ−ブカ−ドを基板の対向面に配設し、上記プ
ロ−ブを撮像する第1撮像手段と上記基板を撮像する第
2撮像手段により、上記プロ−ブと上記基板の位置合わ
せを行うプロ−ブ装置において、上記基板の一直線上に
並んでいない少なくとも3箇所のチップを選出し、これ
らのチップの電極位置座標と、上記プロ−ブの位置座標
を比較・計算することにより、上記プロ−ブと上記基板
の位置合わせをする。
Further, in this probe apparatus, a probe card provided with a probe is disposed on the opposite surface of the substrate, and the first image pickup means for picking up the image of the probe and the image of the substrate are picked up. In the probe device for aligning the probe and the substrate by the second image pickup means, at least three chips which are not aligned on the straight line of the substrate are selected, and the electrode position coordinates of these chips are selected. Then, the position coordinates of the probe and the substrate are aligned by comparing and calculating the position coordinates of the probe.

【0009】また、本プロ−ブ装置は、プロ−ブが設け
られたプロ−ブカ−ドを基板の対向面に配設し、上記プ
ロ−ブを撮像する第1撮像手段と上記基板を撮像する第
2撮像手段により、上記プロ−ブと上記基板の位置合わ
せを行うプロ−ブ装置において、上記第1、第2撮像手
段の何れか一方の手段をタ−ゲットに対し、相対的に移
動させ、焦点合わせをする。
Further, in the present probe apparatus, a probe card provided with a probe is arranged on the opposite surface of the substrate, and the first image pickup means for picking up the image of the probe and the image of the substrate are picked up. In the probe device for aligning the probe and the substrate by the second image pickup means, one of the first and second image pickup means is moved relative to the target. And focus.

【0010】また、本プロ−ブ装置は、プロ−ブが設け
られたプロ−ブカ−ドを基板の対向面に配設し、上記プ
ロ−ブを撮像する第1撮像手段と上記基板を撮像する第
2撮像手段により、上記プロ−ブと上記基板の位置合わ
せを行うプロ−ブ装置において、上記基板が載置された
載置台と上記第1撮像手段とタ−ゲットとの相互の位置
が固定の状態で移動し、上記第2撮像手段の合焦面の上
記タ−ゲットを位置合わせをする。
In the present probe apparatus, a probe card provided with a probe is arranged on the opposite surface of the substrate, and the first image pickup means for picking up the image of the probe and the image of the substrate are picked up. In the probe device for aligning the probe and the substrate by the second image pickup means, the mutual position of the mounting table on which the substrate is placed, the first image pickup means and the target is determined. It moves in a fixed state to align the target on the focusing surface of the second image pickup means.

【0011】また、本発明におけるプロ−ブ方法は、プ
ロ−ブが設けられたプロ−ブカ−ドを基板の対向面に配
設し、上記プロ−ブを撮像する第1撮像手段と上記基板
を撮像する第2撮像手段により、上記プロ−ブと上記基
板の位置合わせを行うのプロ−ブ方法において、上記タ
−ゲットを退避させた後、上記第1撮像手段の合焦面が
プロ−ブに到達するように上記第1撮像手段を移動さ
せ、プロ−ブの座標を求める工程と、退避位置から上記
プロ−ブの下に上記第2撮像手段を移動させる工程と、
上記プロ−ブの下に待機した第2撮像手段の合焦面に上
記タ−ゲットを到達させて上記第1撮像手段と上記第2
撮像手段との位置を合わせる工程と、上記第2撮像手段
の合焦面に基板の電極が到達するよう基板を移動させ、
基板の座標を求める工程と、上記プロ−ブの下に待機し
ている第2撮像手段を退避位置に戻す工程と、上記基板
の電極に上記プロ−ブを接続させて基板の検査を行う工
程とからなる。
Further, in the probe method of the present invention, the probe card provided with the probe is disposed on the opposite surface of the substrate, and the first image pickup means for picking up the image of the probe and the substrate. In the probe method of aligning the probe and the substrate by the second image pickup means for picking up the image, the focusing surface of the first image pickup means is moved after the target is retracted. Moving the first imaging means so as to reach the probe, and obtaining the coordinates of the probe; and moving the second imaging means from the retracted position to under the probe.
The target is made to reach the in-focus surface of the second image pickup means standing by under the probe so that the first image pickup means and the second image pickup means
Aligning the position with the imaging means, moving the substrate so that the electrodes of the substrate reach the focusing surface of the second imaging means,
A step of obtaining the coordinates of the substrate, a step of returning the second image pickup means standing by under the probe to the retracted position, and a step of connecting the probe to the electrode of the substrate and inspecting the substrate Consists of.

【0012】また、本プロ−ブ方法は、プロ−ブが設け
られたプロ−ブカ−ドを基板の対向面に配設し、上記プ
ロ−ブを撮像する第1撮像手段と上記基板を撮像する第
2撮像手段により、上記プロ−ブと上記基板の位置合わ
せを行うプロ−ブ方法において、上記タ−ゲットを退避
させた後、上記第1撮像手段の合焦面がプロ−ブに到達
するように上記第1撮像手段を移動させ、プロ−ブの座
標を求める工程と、退避位置から上記プロ−ブの下に上
記第2撮像手段を移動させる工程と、上記第2撮像手段
の合焦面に基板の電極が到達するよう基板を移動させ、
基板の座標を求める工程と、上記プロ−ブの下に待機し
た第2撮像手段の合焦面に上記タ−ゲットを到達させて
上記第1撮像手段と上記第2撮像手段の位置を合わせる
工程と、上記プロ−ブの下に待機している第2撮像手段
を退避位置に戻す工程と、上記基板の電極に上記プロ−
ブを接続させて基板の検査を行う工程とからなる。
In the present probe method, a probe card provided with a probe is arranged on the opposite surface of the substrate, and the first image pickup means for picking up the image of the probe and the substrate are picked up. In the probe method of aligning the probe and the substrate by the second image pickup means, the focusing surface of the first image pickup means reaches the probe after the target is retracted. So as to move the first image pickup means to obtain the coordinates of the probe, the step of moving the second image pickup means from the retracted position to below the probe, and the combination of the second image pickup means. Move the substrate so that the electrode of the substrate reaches the focal plane,
A step of obtaining the coordinates of the substrate; and a step of aligning the first image pickup means and the second image pickup means by causing the target to reach the focusing surface of the second image pickup means standing by under the probe. And a step of returning the second imaging means standing by under the probe to the retracted position, and the probe on the electrode of the substrate.
And the step of inspecting the substrate by connecting the cables.

【0013】また、本プロ−ブ方法は、プロ−ブが設け
られたプロ−ブカ−ドを基板の対向面に配設し、上記プ
ロ−ブを撮像する第1撮像手段と上記基板を撮像する第
2撮像手段により、上記プロ−ブと上記基板の位置合わ
せを行うプロ−ブ方法において、退避位置から上記プロ
−ブの下に上記第2撮像手段を移動させる工程と、上記
プロ−ブの下に待機した第2撮像手段の合焦面に上記タ
−ゲットを到達させて上記第1撮像手段と上記第2撮像
手段の位置を合わせる工程と、上記第2撮像手段の合焦
面に基板の電極が到達するよう基板を移動させ、基板の
座標を求める工程と、上記プロ−ブの下に待機している
第2撮像手段を退避位置に戻す工程と、上記タ−ゲット
を退避させた後、上記第1撮像手段の合焦面がプロ−ブ
に到達するように上記第1撮像手段を移動させ、プロ−
ブの座標を求める工程と、上記基板の電極に上記プロ−
ブを接続させて基板の検査を行う工程とからなる。
In the present probe method, a probe card provided with a probe is arranged on the opposite surface of the substrate, and the first image pickup means for picking up the image of the probe and the substrate are picked up. In the probe method of aligning the probe and the substrate by the second image pickup means, the step of moving the second image pickup means from the retracted position to below the probe, and the probe. A step of arranging the first imaging means and the second imaging means to align the position of the target on the focusing surface of the second imaging means, which is on standby below The step of moving the substrate so that the electrodes of the substrate reach and obtaining the coordinates of the substrate, the step of returning the second image pickup means standing by under the probe to the retracted position, and the target being retracted After that, the focusing surface of the first image pickup means reaches the probe. Moving the serial first imaging means, pro -
The step of obtaining the coordinates of the probe, and
And the step of inspecting the substrate by connecting the cables.

【0014】また、本プロ−ブ方法は、プロ−ブが設け
られたプロ−ブカ−ドを基板の対向面に配設し、上記プ
ロ−ブを撮像する第1撮像手段と上記基板を撮像する第
2撮像手段により、上記プロ−ブと上記基板の位置合わ
せを行うのプロ−ブ方法において、退避位置から上記プ
ロ−ブの下に上記第2撮像手段を移動させる工程と、上
記第2撮像手段の合焦面に基板の電極が到達するよう基
板を移動させ、基板の座標を求める工程と、上記プロ−
ブの下に待機した第2撮像手段の合焦面に上記タ−ゲッ
トを到達させて上記第1撮像手段と上記第2撮像手段の
位置を合わせる工程と、上記プロ−ブの下に待機してい
る第2撮像手段を退避位置に戻す工程と、上記タ−ゲッ
トを退避させた後、上記第1撮像手段の合焦面がプロ−
ブに到達するように上記第1撮像手段を移動させ、プロ
−ブの座標を求める工程と、上記基板の電極に上記プロ
−ブを接続させて基板の検査を行う工程とからなるプロ
−ブ方法。
In the present probe method, a probe card provided with a probe is arranged on the opposite surface of the substrate, and the first image pickup means for picking up the image of the probe and the image of the substrate are picked up. In the probe method of aligning the probe and the substrate by the second image pickup means, the step of moving the second image pickup means from the retracted position to below the probe; Moving the substrate so that the electrodes of the substrate reach the focusing surface of the image pickup means, and obtaining the coordinates of the substrate;
A step of bringing the target to reach the focusing surface of the second image pickup means which is on standby under the probe, and aligning the positions of the first image pickup means and the second image pickup means, and waiting under the probe. The step of returning the second image pickup means to the retracted position, and after the target is retracted, the focusing surface of the first image pickup means is changed to the professional plane.
Probe for moving the first imaging means so as to reach the probe and obtaining coordinates of the probe; and connecting the probe to the electrode of the substrate to inspect the substrate. Method.

【0015】[0015]

【作用】本発明によれば、基板面より高い位置に設定さ
れた、第1撮像手段の合焦面に、極めて再現性良く設定
可能なタ−ゲットにより第2撮像手段の合焦面を位置合
わせするので、第1撮像手段専用の駆動機構が不要とな
り、XYZステ−ジの絶対精度や熱変形等に影響を受け
ること無く第1撮像手段と第2撮像手段の位置関係を正
確に合わせることが可能になる。また、本発明によれ
ば、上記プロ−ブカ−ドのプロ−ブ位置を求め、この位
置に対する基板の電極の位置を相対的に求める為、プロ
−ブカ−ドの取付位置が微細に異なっても、また熱伸縮
によりプロ−ブ位置と基板電極の相対位置がずれても、
高精度な位置合わせができる。また、本発明によれば、
上記第2撮像手段がX,Y何れか一軸方向に移動し、プ
ロ−ブの下に待機する構成が可能になったので、XY移
動機構(ステ−ジ)を大幅に縮少できる。即ち装置を小
型化できる。更に、本発明によれば、上記基板の一直線
上に並んでいない、少なくとも3箇所のチップを選出
し、これらのチップの電極位置座標と、上記プロ−ブの
位置座標を比較計算することにより、プロ−ブと基板の
位置合わせをする構成にしたので、基板の特定パタ−ン
の位置を求め、この位置に対して載置台の累積誤差の補
正、直交誤差、真直度の補正をすることができる。従っ
て、高精度な位置合わせが可能になる。
According to the present invention, the focus plane of the second image pickup means is positioned on the focus plane of the first image pickup means set at a position higher than the substrate surface by the target which can be set with extremely high reproducibility. As a result, the drive mechanism dedicated to the first image pickup means is unnecessary, and the positional relationship between the first image pickup means and the second image pickup means can be accurately adjusted without being affected by the absolute accuracy of the XYZ stage and thermal deformation. Will be possible. Further, according to the present invention, since the probe position of the probe card is obtained and the position of the electrode of the substrate is relatively obtained with respect to this position, the attachment position of the probe card is slightly different. Also, even if the relative position of the probe electrode and the substrate electrode shifts due to thermal expansion and contraction,
Highly accurate positioning is possible. Further, according to the present invention,
Since the second image pickup means can be moved in either the X-axis or Y-axis direction to stand by under the probe, the XY moving mechanism (stage) can be greatly reduced. That is, the device can be downsized. Further, according to the present invention, at least three chips which are not aligned on the straight line of the substrate are selected, and the electrode position coordinates of these chips and the position coordinates of the probe are compared and calculated. Since the probe and the substrate are aligned with each other, the position of the specific pattern of the substrate can be obtained, and the cumulative error of the mounting table, the orthogonal error, and the straightness can be corrected for this position. it can. Therefore, highly accurate alignment is possible.

【0016】[0016]

【実施例1】本発明のプロ−ブ装置の一実施例を図を用
いて説明する。上記プロ−ブ装置の原理は、第1図に示
すように、プロ−ブカ−ド1のプロ−ブ2の位置(X
0、Y0、Z0)を第1撮像手段3で求め、第1撮像手段
3の位置と第2撮像手段4の位置とを合致させた後、第
2撮像手段4がウエハ5の電極の位置を求め、プロ−ブ
2の位置(X0、Y0、Z0)に対する電極の位置(X1、
Y1、Z1)を算出し、プロ−ブ2と電極5aとの位置を
合わせる構成である。ここで、プロ−ブ2は基板の電極
に接続する機能を有する物であれば、どの様な形状の物
であっても良い。例えば、プリント配線された積層板の
面と傾斜した金属線形状のプロ−ブや、基板面に対して
垂直に立設し、且つプロ−ブ針の座屈を用いた直径70
ミクロンの線材プロ−ブや、フレキシブルなフイルムに
形成された金バンプ電極のプロ−ブ等がある。また、基
板は、半導体のウエハ5およびLCD基板等が含まれ
る。
Embodiment 1 An embodiment of the probe device of the present invention will be described with reference to the drawings. As shown in FIG. 1, the principle of the probe device is that the position of the probe 2 of the probe card 1 (X
0, Y0, Z0) is obtained by the first image pickup means 3, the position of the first image pickup means 3 and the position of the second image pickup means 4 are matched, and then the second image pickup means 4 determines the position of the electrode of the wafer 5. The position (X1, Y0, Z0) of the probe 2 relative to the electrode position (X1,
Y1 and Z1) are calculated and the positions of the probe 2 and the electrode 5a are aligned. Here, the probe 2 may have any shape as long as it has a function of connecting to the electrode of the substrate. For example, a probe having a metal wire shape that is inclined with respect to the surface of a printed wiring board, or a diameter 70 that is erected perpendicularly to the board surface and uses buckling of a probe needle is used.
There are micron wire rod probes and gold bump electrode probes formed on a flexible film. The substrate includes a semiconductor wafer 5 and an LCD substrate.

【0017】上記プロ−ブ装置6は、第2図に示すよう
に、大別するとウエハ5を測定部7まで搬送するロ−ダ
部8と、搬送されたウエハ5を測定して良否を検査する
測定部7とから構成されている。
As shown in FIG. 2, the probe device 6 is roughly classified into a loader unit 8 for transferring the wafer 5 to the measuring unit 7 and a transferred wafer 5 to measure the quality. And a measuring unit 7 that operates.

【0018】前者ロ−ダ部8は測定部7の側面、例えば
右側面に密着して連設されている。このロ−ダ部8の操
作面に沿った同面に多段ウエハカセット9が積み重なる
方向に内設され、操作面から、また上方からもウエハカ
セット9を取り出せる構造になっている。
The former loader section 8 is provided in close contact with the side surface of the measuring section 7, for example, the right side surface. The multistage wafer cassettes 9 are internally provided on the same surface along the operation surface of the loader portion 8 in the stacking direction, and the wafer cassettes 9 can be taken out from the operation surface or from above.

【0019】後者の測定部7は、プロ−ブ装置6本体の
ヘッドプレ−ト12に装着したインサ−トリング11と
プロ−ブカ−ド1からなる固定部13と、載置台14を
XYZ軸及び軸駆動する駆動部および待機位置からプロ
−ブカ−ド1の下へ第2撮像部4を移動させる移動部1
5とから構成されている。上記ヘッドプレ−ト12はサ
ブヘッドプレ−ト12aの中央部に設けられ、サブヘッ
ドプレ−ト12aは、プロ−ブ装置6のベ−ス、例えば
縦横800ミリ角×厚さ80ミリの金属のベ−ス16の
四隅に支柱16aを立設させて、この支柱16aの上
に、例えば、縦横800ミリ角×厚さ40ミリの金属の
板を固定して設けられている。このヘッドプレ−ト12
の中空部にインサ−トリング11が設けられ、更にその
中空部にプロ−ブカ−ド1が装着されている。ここで、
このプロ−ブカ−ド1は植設されたプロ−ブ2をウエハ
5と対向するように配置されている。
The latter measuring unit 7 includes a fixing unit 13 formed of an insert ring 11 and a probe card 1 mounted on a head plate 12 of the main body of the probe apparatus 6, a mounting table 14, and XYZ axes and axes. A driving unit for driving and a moving unit 1 for moving the second imaging unit 4 from the standby position to below the probe card 1.
And 5. The head plate 12 is provided at the center of the sub head plate 12a. The sub head plate 12a is made of a base of the probe device 6, for example, a metal of 800 mm square by 80 mm thick. A pillar 16a is provided upright at four corners of the base 16, and a metal plate having a length and width of 800 mm square and a thickness of 40 mm is fixed on the pillar 16a. This head plate 12
An insert ring 11 is provided in the hollow portion of the above, and a probe card 1 is mounted in the hollow portion. here,
The probe card 1 is arranged so that the implanted probe 2 faces the wafer 5.

【0020】上記移動部15は、第3図に示すように、
第1撮像手段3をプロ−ブ2の位置まで搬送させる第1
移動機構21と、第2撮像手段4をプロ−ブカ−ド1の
下方へ搬送させる第2移動機構22とから構成されてい
る。前者の第1移動機構21はプロ−ブカ−ド1に植設
されたプロ−ブ2の下方へ第1撮像手段3を移動させ
る。そして、ウエハ5をプロ−ブ2の位置まで移動し、
その時のステ−ジの(X、Y、Z)座標を(X0、Y0、
Z0)座標として求める。後者の第2移動機構22は上
記第2撮像手段4をXY方向の何れか一方向に移動さ
せ、プロ−ブカ−ド1の下に到達させる。次に、上記タ
−ゲット25を第1撮像手段3の合焦面27位置へ突出
させ、第1撮像手段3と第2撮像手段4との位置合わせ
した後、上記第1移動機構により、上記第2撮像手段4
の下にウエハ面が来るようにする。そこで、上記第2撮
像手段4により、プロ−ブ2に対応する電極の位置を測
定し、その時のステ−ジの(XYZ)座標を(X1、Y
1、Z1) として求める。
The moving section 15 is, as shown in FIG.
The first imaging means 3 is conveyed to the position of the probe 2
It is composed of a moving mechanism 21 and a second moving mechanism 22 that conveys the second image pickup means 4 below the probe card 1. The former first moving mechanism 21 moves the first imaging means 3 below the probe 2 planted in the probe card 1. Then, the wafer 5 is moved to the position of the probe 2,
The (X, Y, Z) coordinates of the stage at that time are (X0, Y0,
Z0) Obtained as coordinates. The latter second moving mechanism 22 moves the second image pickup means 4 in any one of the XY directions to reach the position below the probe card 1. Next, after the target 25 is projected to the position of the focusing surface 27 of the first image pickup means 3 and the first image pickup means 3 and the second image pickup means 4 are aligned with each other, the first moving mechanism described above is used. Second imaging means 4
Make sure the wafer surface is underneath. Therefore, the position of the electrode corresponding to the probe 2 is measured by the second image pickup means 4, and the (XYZ) coordinate of the stage at that time is calculated as (X1, Y
1, Z1)

【0021】前述した第1移動機構21を更に詳しく述
べる。上記第1移動機構21はウエハ5を載置する周回
転可能な載置台14と、この載置台14の周回転されな
い部分に固定した平板24と、載置台14を昇降させる
Zアップ機構19と、このZアップ機構19をXY方向
に移動させるXYステ−ジ18と、このXYステ−ジ1
8を移動させる駆動部(図示せず)とで構成されてい
る。上記平板24には、第1撮像手段3と退避自在なタ
−ゲット25とが一体で設けられている。上記第1撮像
手段3は載置台 軸中心から数十ミリ、例えば130ミ
リY軸方向に離れた位置に設けられている。ここで、X
Yステ−ジ18とZアップ機構19と合体したアッセン
ブリをXYZ機構20と呼ぶ。
The above-mentioned first moving mechanism 21 will be described in more detail. The first moving mechanism 21 includes a mounting table 14 on which the wafer 5 is mounted, which is rotatable, a flat plate 24 fixed to a portion of the mounting table 14 which is not rotated, and a Z-up mechanism 19 for moving the mounting table 14 up and down. The XY stage 18 for moving the Z-up mechanism 19 in the XY directions, and the XY stage 1
8 and a drive unit (not shown) for moving the unit 8. The flat plate 24 is integrally provided with the first image pickup means 3 and a retractable target 25. The first image pickup means 3 is provided at a position apart from the mounting table axis center by several tens of millimeters, for example, 130 millimeters in the Y-axis direction. Where X
The assembly in which the Y stage 18 and the Z-up mechanism 19 are combined is called an XYZ mechanism 20.

【0022】上記タ−ゲット25は、第4図の(a)に
示すように、第1撮像手段による画像認識可能な物体、
例えば、透明なガラス板25aに、円形の金属膜、例え
ば、直径140ミクロンの金属膜26が蒸着されて構成
されている。第4図の(b)に示すように、上記金属膜
26を第1撮像手段3の合焦面27に合致するように位
置調整する工程がある。次に、第4図の(c)に示すよ
うに、上記タ−ゲット25を上記第1撮像手段3の上か
ら退避させた後,基準のプロ−ブ2が上記第1撮像手段
3の合焦面27に到達するようにXYZ機構20により
第1撮像手段3を移動し、プロ−ブカ−ドの下の上記プ
ロ−ブ2を認識する工程がある。
As shown in FIG. 4A, the target 25 is an object which can be recognized by the first image pickup means.
For example, a circular metal film, for example, a metal film 26 having a diameter of 140 microns is vapor-deposited on a transparent glass plate 25a. As shown in FIG. 4B, there is a step of adjusting the position of the metal film 26 so as to match the focusing surface 27 of the first image pickup means 3. Next, as shown in FIG. 4 (c), after the target 25 is evacuated from the top of the first image pickup means 3, the reference probe 2 is combined with the first image pickup means 3. There is a step of moving the first image pickup means 3 by the XYZ mechanism 20 so as to reach the focal plane 27 and recognizing the probe 2 under the probe card.

【0023】次に、第4図の(d)に示すように、タ−
ゲット25を再現性良く、例えば1乃至2ミクロンの再
現性で第1撮像手段3の上に突出させ、第2撮像手段4
の合焦面27にタ−ゲット25の金属膜26が合致する
ように載置台14のXYZ機構20によりタ−ゲット2
5を移動する。次に、第4図の(e)で示すように、上
記タ−ゲット25を第1撮像手段3の上から退避させ、
上記第2撮像手段4の合焦面が所定のウエハ5の電極面
へ到達するようにXYZ機構20により載置台14を移
動する。
Next, as shown in FIG.
The get 25 is projected with good reproducibility, for example, with a reproducibility of 1 to 2 microns onto the first image pickup means 3, and the second image pickup means 4 is provided.
The target 2 is moved by the XYZ mechanism 20 of the mounting table 14 so that the metal film 26 of the target 25 is aligned with the in-focus surface 27 of the target 2.
Move 5 Next, as shown in FIG. 4 (e), the target 25 is retracted from above the first imaging means 3,
The mounting table 14 is moved by the XYZ mechanism 20 so that the focusing surface of the second image pickup means 4 reaches a predetermined electrode surface of the wafer 5.

【0024】次に、動作について説明する。主要な動作
としては、(1)基準とするプロ−ブ2の位置座標を求
める動作と、(2)第1撮像手段3と第2撮像手段4を
位置合わせする動作と、(3)ウエハ5の電極の位置座
標を求める動作とがある。上記(1)の動作を詳細に説
明すると、第5図に示すように、予め第1撮像手段3の
上にタ−ゲット25を突出させ、上記第1撮像手段3の
合焦面27に合致するようにタ−ゲット25の位置調整
をしておくことは既に述べた。この状態に続いて、上記
タ−ゲット25を上記第1撮像手段3をから退避させ、
この第1撮像手段3をXYZステ−ジ20により、予め
大体判明しているプロ−ブ2の下方へ到達させる。更
に、合焦面27がプロ−ブ2を捉えるようにサ−チし、
この位置を画像認識する。そして、画像認識したプロ−
ブ2の位置を画面中央へ合わせる。その結果、画面中央
にプロ−ブ2を捉えた時のXYZステ−ジ20の座標を
原点(X0、Y0、Z0)とする。
Next, the operation will be described. The main operations are (1) an operation of obtaining the position coordinates of the probe 2 serving as a reference, (2) an operation of aligning the first image pickup means 3 and the second image pickup means 4, and (3) a wafer 5 There is an operation of obtaining the position coordinates of the electrode of. The operation of (1) above will be described in detail. As shown in FIG. 5, the target 25 is projected in advance on the first image pickup means 3 and is aligned with the focusing surface 27 of the first image pickup means 3. It has already been described that the position of the target 25 is adjusted so as to do so. Following this state, the target 25 is retracted from the first image pickup means 3,
The first image pickup means 3 is made to reach below the probe 2, which is generally known in advance, by the XYZ stage 20. Further, the focusing surface 27 is searched so as to catch the probe 2,
This position is image-recognized. Then, the image recognition professional
Adjust the position of knob 2 to the center of the screen. As a result, the coordinates of the XYZ stage 20 when the probe 2 is captured at the center of the screen are the origin (X0, Y0, Z0).

【0025】次に、上記(2)の動作を説明する。第6
図に示すように、プロ−ブカ−ド1の下方に移動し待機
した第2撮像手段4の下に第1撮像手段3を到達させ、
第1撮像手段3の上方にタ−ゲット25を再現性良く突
出させる。ここで、画像認識により突出したタ−ゲット
25の金属膜26に第2撮像手段4の合焦面27を合致
させることにより、第1撮像手段3と第2撮像手段4の
位置合わせが終了となる。この位置合わせ後、上記第1
撮像手段3の上のタ−ゲット25を上記第1撮像手段3
から退避させる。
Next, the operation (2) will be described. Sixth
As shown in the figure, the first image pickup means 3 is made to reach below the second image pickup means 4 which has moved below the probe card 1 and stands by,
The target 25 is projected above the first imaging means 3 with good reproducibility. Here, by aligning the focusing surface 27 of the second image pickup means 4 with the metal film 26 of the target 25 projected by the image recognition, the alignment between the first image pickup means 3 and the second image pickup means 4 is completed. Become. After this alignment, the first
The target 25 on the image pickup means 3 is attached to the first image pickup means 3
Evacuate from.

【0026】次に、上記(3)の動作を説明する。第7
図(a)に示すように、上記第2撮像手段4の下に載置
台上のウエハ5が到達するようにXYZ機構20を駆動
し、次に第7図(b)に示すように第2撮像手段4の合
焦面27にウエハ5のプロ−ブ2に対応する電極が来る
ように画像認識により位置合わせする。この認識したプ
ロ−ブ2に対応する電極の位置を座標(X1、Y1、Z
1)とする。これで第7図(c)の(X0、Y0、Z0)に
対するウエハの電極位置の座標(X1、Y1、Z1)が求
まったことになる。
Next, the operation of the above (3) will be described. Seventh
As shown in FIG. 7A, the XYZ mechanism 20 is driven so that the wafer 5 on the mounting table reaches below the second image pickup means 4, and then as shown in FIG. Positioning is performed by image recognition so that the electrode corresponding to the probe 2 of the wafer 5 comes to the focusing surface 27 of the image pickup means 4. The position of the electrode corresponding to the recognized probe 2 is coordinate (X1, Y1, Z
1) By this, the coordinates (X1, Y1, Z1) of the electrode position of the wafer with respect to (X0, Y0, Z0) in FIG. 7C are obtained.

【0027】本実施例による効果。ウエハ面より高い位
置に設定された、第1撮像手段の合焦面に、極めて再現
性良く設定可能なタ−ゲットにより、第2撮像手段の合
焦面を位置合わせするので、第1撮像手段専用の駆動機
構が不要となり、XYZステ−ジの絶対精度や熱変形等
に影響を受けることなく第1撮像手段と第2撮像手段の
位置関係を正確に合わせることが可能になる。また、上
記プロ−ブカ−ドのプロ−ブ位置を求め、この位置に対
応するウエハの電極の位置を相対的に求める為、プロ−
ブカ−ドの取付位置が多少ずれても、また熱伸縮により
プロ−ブ位置とウエハ電極の相対位置がずれても、高精
度な位置合わせができる。また、上記第2撮像手段が
X,Y何れか一軸方向に移動し、第1撮像手段側に設け
た移動可能なタ−ゲット(移動タ−ゲットとも言う)で
位置合わせし、ウエハの電極を撮像する構成にしたの
で、XY移動機構を大幅に縮少できる。即ち装置を小型
化できる。
Effects of this embodiment. Since the focus plane of the second image pickup means is aligned with the focus plane of the first image pickup means set at a position higher than the wafer surface by the target which can be set with extremely high reproducibility, the first image pickup means A dedicated drive mechanism is unnecessary, and the positional relationship between the first image pickup means and the second image pickup means can be accurately adjusted without being affected by the absolute accuracy of the XYZ stage, thermal deformation, and the like. Further, the probe position of the probe card is obtained, and the position of the electrode of the wafer corresponding to this position is relatively obtained.
Even if the mounting position of the bud is slightly displaced or the relative position of the probe electrode and the wafer electrode is displaced due to thermal expansion and contraction, highly accurate alignment is possible. Further, the second image pickup means moves in one of the X and Y directions and is aligned by a movable target (also referred to as a moving target) provided on the first image pickup means side, and the electrodes of the wafer are attached. Since the configuration is such that imaging is performed, the XY movement mechanism can be greatly reduced. That is, the device can be downsized.

【0028】[0028]

【実施例2】本発明のプロ−ブ装置の複数チップを用い
た位置合わせの実施例を図を用いて説明する。第8図に
示すように、ウエハ5の複数のチップ、例えば5点チッ
プ(a,b,c,d,e)があり、X軸方向で考えれ
ば、3点チップ(a,b,c)がある。その構成はbチ
ップがウエハ5の中心付近に位置しており、a,cチッ
プは上記bチップより等間隔、例えば1/2Lの位置に
ある。本発明の位置合わせは、上記のチップ配置で説明
する。プロ−ブカ−ドの下方に待機した第2撮像手段の
下方にウエハの中心が位置している。この中心付近に上
記bチップがある。次に、第9図において、上記aチッ
プとcチップのX座標を実測し、その中間のチップのX
座標は比例配分で補間した場合、例えばbチップにおい
ては、X方向に最大の位置ずれ△x1が発生する。とこ
ろが上記aチップとcチップの間にbチップを設け、a
チップとbチップのX座標を実測し、その間のチップの
X座標は比例配分で補間すると、例えば7番目のチップ
において、最大のズレ△x2が発生するが、実用的に△
x2<△x1となることが判っており、位置合わせ精度が
向上する。また、△x1についても、aチップとcチッ
プ間のウエハ上のチップの位置精度と移動機構の精度の
直線性に依存する誤差などで、従来のプロ−ブ装置の誤
差に比べると極めて小さい。上記説明はX軸方向に付い
て述べたが、Y軸方向、例えば(d、b,e)で考えた
場合でも、上記と同様である。また、同様に、abeチ
ップのように、直交するXY軸方向の成分をもつウエハ
上の3点を用いて、XYステ−ジの直交を補正すること
が可能である。上記認識の手順の一例を第8図及び第9
図を用いて、簡単に述べると、ウエハの中央のbチップ
のプロ−ブ2に対応する電極の位置を、第2撮像手段の
倍率をマクロおよびミクロに切り替えて画像認識する。
更に、ウエハを1/4の面積毎に位置合わせを行うと微
細な位置合わせが可能となる。例えば、aチップ、bチ
ップ、eチップで囲われた1/4の面積で上記方法で送
り誤差を補正することにより高精度の位置合わせが可能
となる。しかも、ウエハの検査面積を更に細かく、例え
ばfチップ、bチップ、iチップで囲われる一辺1/4
Lの四角形の部分に対して上述した方法で位置合わせを
行えば、更に高精度の位置合わせが可能となる。
[Embodiment 2] An embodiment of alignment using a plurality of chips of the probe device of the present invention will be described with reference to the drawings. As shown in FIG. 8, there are a plurality of chips on the wafer 5, for example, five-point chips (a, b, c, d, e). Considering in the X-axis direction, three-point chips (a, b, c). There is. In this structure, the b chips are located near the center of the wafer 5, and the a and c chips are located at equal intervals, for example, 1/2 L, from the b chips. The alignment of the present invention will be described in the above chip arrangement. The center of the wafer is located below the second imaging means which is on standby below the probe card. The b chip is located near this center. Next, in FIG. 9, the X-coordinates of the a-chip and the c-chip are measured, and the X-coordinate of the intermediate chip
When the coordinates are interpolated by proportional distribution, the maximum positional deviation Δx1 occurs in the X direction, for example, in chip b. However, a b chip is provided between the a chip and the c chip, and a
If the X-coordinates of the chip and the b-chip are actually measured and the X-coordinates of the chips between them are interpolated by proportional distribution, for example, the maximum deviation Δx2 occurs in the seventh chip, but it is practically Δ
It is known that x2 <Δx1, and the alignment accuracy is improved. Also, Δx1 is extremely small as compared with the error of the conventional probe device due to an error depending on the linearity of the positional accuracy of the chip on the wafer between the a chip and the c chip and the accuracy of the moving mechanism. Although the above description has been made with respect to the X-axis direction, the same applies to the case of considering the Y-axis direction, for example, (d, b, e). Similarly, it is possible to correct the orthogonality of the XY stage by using three points on the wafer, which have components in the XY axis directions orthogonal to each other, like an abe chip. An example of the above recognition procedure is shown in FIGS.
Briefly referring to the drawing, the position of the electrode corresponding to the probe 2 of the b chip in the center of the wafer is recognized by changing the magnification of the second image pickup means between macro and micro.
Further, if the wafer is aligned for each 1/4 area, fine alignment becomes possible. For example, it is possible to perform highly accurate alignment by correcting the feed error by the above method in the area of 1/4 surrounded by the a chip, the b chip, and the e chip. Moreover, the inspection area of the wafer is made finer, for example, 1/4 side surrounded by f chips, b chips, and i chips.
If the position of the quadrangle portion of L is adjusted by the above-described method, the position can be adjusted with higher accuracy.

【0029】本実施例による効果。上記ウエハのX、Y
軸の少なくとも3箇所のチップを選出し、これらのチッ
プの電極位置座標とプロ−ブの位置座標を比較計算する
ことによりプロ−ブとウエハの位置合わせをする構成に
したので、ウエハの特定パタ−ンの位置を求め、この位
置に対して載置台の累積誤差の補正、直交誤差、真直度
等の補正をすることができる。従って、高精度な位置合
わせが可能になる。
Effects of this embodiment. X, Y of the above wafer
Since at least three chips on the axis are selected and the electrode position coordinates of these chips and the position coordinates of the probe are compared and calculated, the probe and the wafer are aligned with each other. It is possible to determine the position of the negative side and correct the accumulated error of the mounting table, the orthogonal error, the straightness, etc. to this position. Therefore, highly accurate alignment is possible.

【0030】[0030]

【実施例3】本発明のプロ−ブ方法の実施例を第10図
を用いて説明する。予めタ−ゲットを第1撮像手段の上
に配置し、このタ−ゲットが第1撮像手段合焦面に位置
するように調整し、タ−ゲットが第1撮像手段の上方か
ら退避された状態にしてある。引き続いて、XYステ−
ジおよびZアップ機構で第1撮像手段をXYZ移動さ
せ、合焦面でプロ−ブ位置を画像認識し、画像認識した
基準プロ−ブの位置を基準座標(X0、Y0、Z0)とす
る(ステップa)。固定部、例えばヘッドプレ−トに設
けた第2移動機構の駆動で第2撮像手段をプロ−ブカ−
ドの下方に待機させる(ステップb)。この待機した第
2撮像手段下方に第1撮像手段を移動させる。そして、
タ−ゲットを第1撮像手段の上方に突出させ、このタ−
ゲットの位置に第2撮像手段の合焦面を合致させること
により、第1撮像手段と第2撮像手段との位置合わせを
行った後、このタ−ゲットを再度退避させる(ステップ
c)。その後、第2撮像手段の下方にウエハを配置さ
せ、ウエハの電極の座標(X1、Y1、Z1)を求める
(ステップd)。上記プロ−ブカ−ドの下方の第2撮像
手段を退避位置に戻す(ステップe)。プロ−ブをウエ
ハの電極に電気的に接続させてウエハを検査する(ステ
ップf)。
[Embodiment 3] An embodiment of the probe method of the present invention will be described with reference to FIG. A state in which the target is arranged in advance on the first image pickup means, the target is adjusted so as to be located on the focusing surface of the first image pickup means, and the target is retracted from above the first image pickup means. I am doing it. Then, XY station
The first and second image pickup means are moved in XYZ by the Z and Z-up mechanism, the probe position is image-recognized on the focusing surface, and the position of the image-recognized reference probe is set as reference coordinates (X0, Y0, Z0) ( Step a). The second image pickup means is driven by a fixed portion, for example, a second moving mechanism provided on the head plate to drive the probe camera.
It is made to stand by below (step b). The first image pickup means is moved below the standby second image pickup means. And
The target is projected above the first image pickup means, and the target is
By aligning the first imaging means and the second imaging means by aligning the focusing surface of the second imaging means with the position of the get, the target is retracted again (step c). Then, the wafer is placed below the second image pickup means, and the coordinates (X1, Y1, Z1) of the electrodes of the wafer are obtained (step d). The second image pickup means below the probe card is returned to the retracted position (step e). The probe is electrically connected to the electrodes of the wafer to inspect the wafer (step f).

【0031】[0031]

【実施例4】本発明のプロ−ブ方法の他の実施例を第1
1図を用いて説明する。予めタ−ゲットを第1撮像手段
の上に配置し、このタ−ゲットが第1撮像手段の合焦面
に位置するように調整し、タ−ゲットが第1撮像手段の
上方から退避された状態にしてある。引き続いて、XY
ステ−ジおよびZアップ機構で第1撮像手段をXYZ移
動させ、合焦面でプロ−ブ位置を画像認識し、画像認識
した基準プロ−ブの位置を基準座標(X0、Y0、Z0)
とする(ステップa)。上記ヘッドプレ−トに設けた第
2移動機構の駆動で第2撮像手段をプロ−ブカ−ドの下
方に待機させる(ステップb)。その後、第2撮像手段
の下方にウエハを配置させ、ウエハの電極の座標(X
1、Y1、Z1)を求める(ステップd)。この待機した
第2撮像手段下方に第1撮像手段を移動させる。そし
て、タ−ゲットを第1撮像手段の上方に突出させ、この
タ−ゲットの位置に第2撮像手段の合焦面を合致させる
ことにより、第1撮像手段と第2撮像手段との位置合わ
せを行った後、このタ−ゲットを再度退避させる(ステ
ップc)。上記プロ−ブカ−ドの下方の第2撮像手段を
退避位置に戻す(ステップe)。プロ−ブをウエハの電
極に電気的に接続させてウエハを検査する(ステップ
f)。
[Embodiment 4] A first embodiment of another embodiment of the probe method of the present invention.
This will be described with reference to FIG. The target is arranged in advance on the first image pickup means, the target is adjusted so as to be located on the focusing surface of the first image pickup means, and the target is retracted from above the first image pickup means. It is in a state. Then, XY
The first image pickup means is moved in XYZ by the stage and Z-up mechanism, the probe position is image-recognized on the focusing surface, and the position of the image-recognized reference probe is reference coordinates (X0, Y0, Z0).
(Step a). By driving the second moving mechanism provided on the head plate, the second image pickup means is made to stand by below the probe card (step b). After that, the wafer is placed below the second imaging means, and the coordinates (X
1, Y1, Z1) is calculated (step d). The first image pickup means is moved below the standby second image pickup means. Then, the target is projected above the first image pickup means, and the focusing surface of the second image pickup means is matched with the position of this target, thereby aligning the first image pickup means and the second image pickup means. After this, the target is saved again (step c). The second image pickup means below the probe card is returned to the retracted position (step e). The probe is electrically connected to the electrodes of the wafer to inspect the wafer (step f).

【0032】[0032]

【実施例5】本発明のプロ−ブ方法の他の実施例を第1
2図を用いて説明する。予めタ−ゲットを第1撮像手段
の上に配置し、このタ−ゲットが第1撮像手段の合焦面
に位置するように調整し、タ−ゲットが第1撮像手段の
上方から退避された状態にしてある。引き続いて、上記
ヘッドプレ−トに設けた第2移動機構の駆動で第2撮像
手段をプロ−ブカ−ドの下方に待機させる(ステップ
b)。この待機した第2撮像手段下方に第1撮像手段を
移動させる。そして、タ−ゲットを第1撮像手段の上方
に突出させ、このタ−ゲットの位置に第2撮像手段の合
焦面を合致させることにより、第1撮像手段と第2撮像
手段との位置合わせを行った後、このタ−ゲットを再度
退避させる(ステップc)。その後、第2撮像手段の下
方にウエハを配置させ、ウエハの電極の座標(X1、Y
1、Z1)を求める(ステップd)。上記プロ−ブカ−ド
の下方の第2撮像手段を退避位置に戻す(ステップ
e)。XYステ−ジおよびZアップ機構で第1撮像手段
をXYZ移動させ、合焦面でプロ−ブ位置を画像認識
し、画像認識した基準プロ−ブの位置を基準座標(X
0、Y0、Z0)とする(ステップa)。プロ−ブとウエ
ハの電極とを電気的に接続してウエハを検査する(ステ
ップf)。
[Embodiment 5] A first embodiment of the probe method of the present invention
This will be described with reference to FIG. The target is arranged in advance on the first image pickup means, the target is adjusted so as to be located on the focusing surface of the first image pickup means, and the target is retracted from above the first image pickup means. It is in a state. Subsequently, the second moving mechanism provided on the head plate drives the second imaging means to stand by below the probe card (step b). The first image pickup means is moved below the standby second image pickup means. Then, the target is projected above the first image pickup means, and the focusing surface of the second image pickup means is matched with the position of this target, thereby aligning the first image pickup means and the second image pickup means. After this, the target is saved again (step c). After that, the wafer is placed below the second image pickup means, and the coordinates (X1, Y) of the electrodes of the wafer are placed.
1, Z1) is calculated (step d). The second image pickup means below the probe card is returned to the retracted position (step e). The first imaging means is moved in XYZ by the XY stage and the Z-up mechanism, the probe position is image-recognized on the focusing surface, and the position of the image-recognized reference probe is the reference coordinate (X
0, Y0, Z0) (step a). The probe is electrically connected to the electrodes of the wafer to inspect the wafer (step f).

【0033】[0033]

【実施例6】本発明のプロ−ブ方法の他の実施例を第1
3図を用いて説明する。予めタ−ゲットを第1撮像手段
の上に配置し、このタ−ゲットが第1撮像手段の合焦面
に位置するように調整し、タ−ゲットが第1撮像手段の
上方から退避された状態にしてある。引き続いて、上記
ヘッドプレ−トに設けた第2移動機構の駆動で第2撮像
手段をプロ−ブカ−ドの下方に待機させる(ステップ
b)。その後、第2撮像手段の下方にウエハを配置さ
せ、ウエハの電極の座標(X1,Y1,Z1)を求める
(ステップd)。この待機した第2撮像手段下方に第1
撮像手段を移動させる。そして、タ−ゲットを第1撮像
手段の上方に突出させ、このタ−ゲットの位置に第2撮
像手段の合焦面を合致させることにより、第1撮像手段
と第2撮像手段との位置合わせを行った後、このタ−ゲ
ットを再度退避させる(ステップc)。上記プロ−ブカ
−ドの下方の第2撮像手段を退避位置に戻す(ステップ
e)。XYステ−ジおよびZアップ機構で第1撮像手段
をXYZ移動させ、合焦面でプロ−ブ位置を画像認識
し、画像認識した基準プロ−ブの位置を基準座標(X
0、Y0、Z0)とする(ステップa)。プロ−ブとウエ
ハの電極とを電気的に接続してウエハを検査する(ステ
ップf)。
[Embodiment 6] Another embodiment of the probe method of the present invention
This will be described with reference to FIG. The target is arranged in advance on the first image pickup means, the target is adjusted so as to be located on the focusing surface of the first image pickup means, and the target is retracted from above the first image pickup means. It is in a state. Subsequently, the second moving mechanism provided on the head plate drives the second imaging means to stand by below the probe card (step b). Then, the wafer is placed below the second image pickup means, and the coordinates (X1, Y1, Z1) of the electrodes of the wafer are obtained (step d). Below the waiting second image pickup means, the first
The imaging means is moved. Then, the target is projected above the first image pickup means, and the focusing surface of the second image pickup means is matched with the position of this target, thereby aligning the first image pickup means and the second image pickup means. After this, the target is saved again (step c). The second image pickup means below the probe card is returned to the retracted position (step e). The first imaging means is moved in XYZ by the XY stage and the Z-up mechanism, the probe position is image-recognized on the focusing surface, and the position of the image-recognized reference probe is the reference coordinate (X
0, Y0, Z0) (step a). The probe is electrically connected to the electrodes of the wafer to inspect the wafer (step f).

【0034】[0034]

【発明の効果】本発明は、検査開始毎に、第1撮像部で
プロ−ブの位置を求めて、この位置を基準にして、基板
の位置を第2撮像部で求め、プロ−ブと基板の電極とを
位置合わせる構成なので、使用中の温度が変化したり、
プロ−ブ装置の温度が変化することにより移動機構の送
り誤差が生じても、この誤差に対応した送り量で移動す
ることができ、高精度の位置合わせを行うプロ−ブ装
置、またプロ−ブ方法を得ることができる。実際に、テ
ストヘッドをプロ−ブ装置のヘッドプレ−トに搭載させ
て基板の検査をする時、移動機構部の温度が30℃位に
上昇する場合がある。この場合でも、高精度の位置合わ
せを行うプロ−ブ装置、またプロ−ブ方法を得ることが
できる。更に、大重量のテストヘッドを搭載させて、基
板の検査を行っている場合がある。上記大重量のテスト
ヘッドを搭載することによりプロ−ブ装置が歪んだ状態
であっても、求めたプロ−ブの位置を基準にして、基板
の位置を求め、プロ−ブと基板の電極とを位置合わせを
行うので、高精度な位置合わせを行うプロ−ブ装置、ま
たプロ−ブ方法を得ることができる。また、本発明によ
れば、上記第2撮像手段がX,Y何れか一軸方向に移動
し、第1撮像手段側に設けた移動可能なタ−ゲット(移
動タ−ゲットとも言う)で位置合わせし、基板の特定パ
タ−ンを撮像する構成にしたので、第2撮像手段の移動
による位置の再現性に影響されず、高精度な位置合わせ
を行うことができる。更に、上記基板のX、Y軸の少な
くとも3箇所のチップを選出し、これらのチップの電極
位置座標と、上記プロ−ブの位置座標を比較計算するこ
とによりプロ−ブと基板の位置合わせをする構成にした
ので、基板の特定パタ−ンの位置を求め、この位置に対
して載置台の累積誤差の補正、直交誤差、真直度の補正
をすることができる。従って、高精度な位置合わせが可
能になる。更にまた、第2撮像手段をプロ−ブの下に移
動可能にしたので、プロ−ブ装置を小型化できる。
According to the present invention, the position of the probe is obtained by the first image pickup unit every time the inspection is started, and the position of the substrate is obtained by the second image pickup unit with reference to this position, and the probe position is obtained. Because it is a structure that aligns with the electrodes of the board, the temperature during use changes,
Even if a feed error of the moving mechanism occurs due to a change in the temperature of the probe device, it is possible to move with a feed amount corresponding to this error, and a probe device for performing highly accurate positioning, and a probe device. You can get the way. Actually, when the test head is mounted on the head plate of the probe apparatus to inspect the substrate, the temperature of the moving mechanism portion may rise to about 30 ° C. Even in this case, it is possible to obtain a probe device and a probe method for performing highly accurate alignment. Further, there is a case where a heavy test head is mounted to inspect the substrate. Even if the probe device is distorted by mounting the above-mentioned heavy weight test head, the position of the substrate is determined on the basis of the position of the probe obtained, and the probe and the electrode of the substrate are Since the alignment is performed, it is possible to obtain a probe device and a probe method for performing highly accurate alignment. Further, according to the present invention, the second image pickup means is moved in one of the X and Y axis directions, and is aligned by a movable target (also referred to as a movable target) provided on the first image pickup means side. However, since the specific pattern of the substrate is imaged, it is possible to perform highly accurate alignment without being affected by the reproducibility of the position due to the movement of the second imaging means. Further, at least three chips on the X and Y axes of the substrate are selected, and the position coordinates of the probe and the substrate are aligned by comparing and calculating the electrode position coordinates of these chips and the position coordinates of the probe. With this configuration, the position of the specific pattern on the substrate can be obtained, and the cumulative error of the mounting table, the orthogonal error, and the straightness can be corrected for this position. Therefore, highly accurate alignment is possible. Furthermore, since the second image pickup means can be moved under the probe, the probe device can be downsized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のプロ−ブ装置の原理を示す原理図であ
る。
FIG. 1 is a principle diagram showing the principle of a probe device of the present invention.

【図2】本発明のプロ−ブ装置の全体構成図である。FIG. 2 is an overall configuration diagram of a probe device of the present invention.

【図3】本発明の固定部に対する移動部を説明する第1
第2移動部説明図である。
FIG. 3 is a first diagram for explaining a moving part with respect to a fixed part of the present invention.
It is a 2nd moving part explanatory view.

【図4】本発明のタ−ゲットの動作説明図である。FIG. 4 is an operation explanatory diagram of the target of the present invention.

【図5】本発明の第1撮像手段でプロ−ブ針をサ−チす
る動作説明図である。
FIG. 5 is an explanatory view of the operation of searching the probe needle by the first image pickup means of the present invention.

【図6】本発明の第1撮像手段と第2撮像手段との位置
合わせの為の説明図である。
FIG. 6 is an explanatory diagram for aligning the first imaging means and the second imaging means of the present invention.

【図7】本発明の第2撮像手段で、ウエハの電極をサ−
チする説明図である。
FIG. 7 is a diagram illustrating a second image pickup means of the present invention, in which electrodes of a wafer are supported.
FIG.

【図8】本発明の5点チェックするチップの位置合わせ
を説明する説明図である。
FIG. 8 is an explanatory diagram for explaining alignment of a chip for checking five points according to the present invention.

【図9】本発明の誤差の補正をウエハを用いて説明する
説明図である。
FIG. 9 is an explanatory diagram for explaining an error correction of the present invention using a wafer.

【図10】本発明のプロ−ブ方法のフロ−チャ−ト図で
ある。
FIG. 10 is a flowchart of the probe method of the present invention.

【図11】本発明のプロ−ブ方法の他のフロ−チャ−ト
図である。
FIG. 11 is another flowchart of the probe method of the present invention.

【図12】本発明のプロ−ブ方法の他のフロ−チャ−ト
図である。
FIG. 12 is another flowchart of the probe method of the present invention.

【図13】本発明のプロ−ブ方法の他のフロ−チャ−ト
図である。
FIG. 13 is another flowchart of the probe method of the present invention.

【符号の説明】[Explanation of symbols]

1:プロ−ブカ−ド 2:プロ−ブ 3:第1撮像手段 4:第2撮像手段 5:ウエハ 13:固定部 14:載置台 18:XYステ−ジ 19:Zアップ機構 20:XYZステ−ジ(XYZ機構とも言う) 25:タ−ゲット 26:タ−ゲットの金属膜 27:合焦面 24:平板 DESCRIPTION OF SYMBOLS 1: Probe card 2: Probe 3: 1st imaging means 4: 2nd imaging means 5: Wafer 13: Fixed part 14: Mounting table 18: XY stage 19: Z up mechanism 20: XYZ stage -Di (also referred to as XYZ mechanism) 25: target 26: target metal film 27: focusing surface 24: flat plate

───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉岡 晴彦 山梨県韮崎市藤井町北下条2381番地の1 東京エレクトロン山梨株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Haruhiko Yoshioka 1 2381 Kitashitajo, Fujii-cho, Nirasaki-shi, Yamanashi Tokyo Electron Yamanashi Co., Ltd.

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 プロ−ブが設けられたプロ−ブカ−ドを
基板の対向面に配設し、上記プロ−ブを撮像する第1撮
像手段および上記基板を撮像する第2撮像手段により、
上記プロ−ブと上記基板の位置合わせを行うプロ−ブ装
置において、 上記基板とプロ−ブの間にタ−ゲットを設けて上記第1
と第2撮像手段との位置合わせを行った後、上記タ−ゲ
ットを上記位置から退避する構成にしたことを特徴とす
るプロ−ブ装置。
1. A probe card provided with a probe is disposed on an opposing surface of a substrate, and a first image capturing means for capturing an image of the probe and a second image capturing means for capturing an image of the substrate are provided.
A probe device for aligning the probe and the substrate, wherein a target is provided between the substrate and the probe.
And the second image pickup means are aligned with each other, and then the target is retracted from the position.
【請求項2】 水平方向及び上下方向に移動可能なステ
−ジ上に周回転可能な載置台を設け、この載置台に載置
された基板の対向面にプロ−ブカ−ドを配設し、プロ−
ブを撮像する第1撮像手段と上記基板を撮像する第2撮
像手段と、上記基板とプロ−ブの間に退避可能に設けた
タ−ゲットにより、上記プロ−ブと上記基板の位置合わ
せを行うプロ−ブ装置において、 上記ステ−ジの周回転しない部分に上記第1撮像手段及
び上記退避可能なタ−ゲットを設けたことを特徴とする
プロ−ブ装置。
2. A mounting table which is capable of circumferential rotation is provided on a stage which is movable in the horizontal and vertical directions, and a probe card is arranged on the facing surface of a substrate mounted on the mounting table. , Professional
The position of the probe and the board is aligned by the first image pickup means for picking up an image of the probe, the second image pickup means for picking up the board, and the target provided so as to be retractable between the board and the probe. A probe apparatus for performing the probe apparatus, wherein the first image pickup means and the retractable target are provided in a portion of the stage that does not rotate.
【請求項3】 プロ−ブが設けられたプロ−ブカ−ドを
基板の対向面に配設し、上記プロ−ブを撮像する第1撮
像手段と上記基板を撮像する第2撮像手段により、上記
プロ−ブと上記基板との位置合わせを行うプロ−ブ装置
において、 上記第1撮像手段をプロ−ブカ−ドに対して水平及び上
下方向に移動する移動機構側に設け、上記第2撮像手段
をプロ−プロ−ブカ−ドに対してX,Y何れか一軸方向
に移動する移動機構に設けたことを特徴とするプロ−ブ
装置。
3. A probe card provided with a probe is arranged on the opposite surface of the substrate, and a first image pickup means for picking up the image of the probe and a second image pickup means for picking up the image of the substrate are provided. In the probe device for aligning the probe and the substrate, the first image pickup means is provided on the side of a moving mechanism that moves horizontally and vertically with respect to the probe card, and the second image pickup means is provided. A probe device, characterized in that the means is provided in a moving mechanism for moving in either the X or Y axis direction with respect to the probe card.
【請求項4】 プロ−ブが設けられたプロ−ブカ−ドを
基板の対向面に配設し、上記プロ−ブを撮像する第1撮
像手段と上記基板を撮像する第2撮像手段により、上記
プロ−ブと上記基板の位置合わせを行うプロ−ブ装置に
おいて、 上記基板の一直線上に並んでいない少なくとも3箇所の
チップを選出し、これらのチップの電極位置座標と、上
記プロ−ブの位置座標を比較・計算することにより、上
記プロ−ブと上記基板の位置合わせをすることを特徴と
するプロ−ブ装置。
4. A probe card provided with a probe is arranged on the opposite surface of a substrate, and a first image capturing means for capturing an image of the probe and a second image capturing means for capturing an image of the substrate are provided. In a probe device for aligning the probe and the substrate, at least three chips which are not aligned on the straight line of the substrate are selected, and the electrode position coordinates of these chips and the probe position. A probe device for aligning the probe and the substrate by comparing and calculating position coordinates.
【請求項5】 プロ−ブが設けられたプロ−ブカ−ドを
基板の対向面に配設し、上記プロ−ブを撮像する第1撮
像手段と上記基板を撮像する第2撮像手段により、上記
プロ−ブと上記基板の位置合わせを行うプロ−ブ装置に
おいて、 上記第1、第2撮像手段の何れか一方の手段をタ−ゲッ
トに対し、相対的に移動させ、焦点合わせをすることを
特徴とするプロ−ブ装置。
5. A probe card provided with a probe is arranged on the opposite surface of the substrate, and a first image capturing means for capturing an image of the probe and a second image capturing means for capturing an image of the substrate are provided. In a probe device for aligning the probe and the substrate, either one of the first and second image pickup means is moved relative to the target for focusing. A probe device.
【請求項6】 プロ−ブが設けられたプロ−ブカ−ドを
基板の対向面に配設し、上記プロ−ブを撮像する第1撮
像手段と上記基板を撮像する第2撮像手段により、上記
プロ−ブと上記基板の位置合わせを行うプロ−ブ装置に
おいて、 上記基板が載置された載置台と上記第1撮像手段とタ−
ゲットとの相互の位置が固定の状態で移動し、上記第2
撮像手段の合焦面に上記タ−ゲットを位置合わせをする
ことを特徴とするプロ−ブ装置。
6. A probe card provided with a probe is disposed on an opposite surface of a substrate, and a first image capturing means for capturing an image of the probe and a second image capturing means for capturing an image of the substrate are provided. In a probe device for aligning the probe and the substrate, a mounting table on which the substrate is mounted, the first imaging means, and a target.
It moves with the position relative to the get fixed,
A probe apparatus for aligning the target with the focusing surface of the image pickup means.
【請求項7】 プロ−ブが設けられたプロ−ブカ−ドを
基板の対向面に配設し、上記プロ−ブを撮像する第1撮
像手段と上記基板を撮像する第2撮像手段により、上記
プロ−ブと上記基板の位置合わせを行うプロ−ブ方法に
おいて、 タ−ゲットを退避させた後、上記第1撮像手段の合焦面
がプロ−ブに到達するように上記第1撮像手段を移動さ
せ、プロ−ブの座標を求める工程と、 退避位置から上記プロ−ブの下に上記第2撮像手段を移
動させる工程と、 上記プロ−ブの下に待機した第2撮像手段の合焦面に上
記タ−ゲットを到達させて上記第1撮像手段と上記第2
撮像手段の位置を合わせる工程と、 上記第2撮像手段の合焦面に基板の電極が到達するよう
基板を移動させ、基板の座標を求める工程と、 上記プロ−ブの下に待機している第2撮像手段を退避位
置に戻す工程と、 上記基板の電極に上記プロ−ブを接続させて基板の検査
を行う工程とからなるプロ−ブ方法。
7. A probe card provided with a probe is disposed on the opposite surface of the substrate, and a first image capturing means for capturing an image of the probe and a second image capturing means for capturing an image of the substrate are provided. In a probe method for aligning the probe and the substrate, the first imaging means is arranged so that the focusing surface of the first imaging means reaches the probe after the target is retracted. Of the probe, the step of obtaining the coordinates of the probe, the step of moving the second image pickup means from the retracted position to under the probe, and the step of moving the second image pickup means waiting under the probe. When the target reaches the focal plane, the first imaging means and the second
The step of aligning the position of the image pickup means, the step of moving the board so that the electrodes of the board reach the focusing surface of the second image pickup means, and obtaining the coordinates of the board, and waiting under the probe. A probe method comprising a step of returning the second imaging means to the retracted position and a step of inspecting the substrate by connecting the probe to the electrode of the substrate.
【請求項8】 プロ−ブが設けられたプロ−ブカ−ドを
基板の対向面に配設し、上記プロ−ブを撮像する第1撮
像手段と上記基板を撮像する第2撮像手段により、上記
プロ−ブと上記基板の位置合わせを行うプロ−ブ方法に
おいて、 上記タ−ゲットを退避させた後、上記第1撮像手段の合
焦面がプロ−ブに到達するように上記第1撮像手段を移
動させ、プロ−ブの座標を求める工程と、 退避位置から上記プロ−ブの下に上記第2撮像手段を移
動させる工程と、 上記第2撮像手段の合焦面に基板の電極が到達するよう
基板を移動させ、基板の座標を求める工程と、 上記プロ−ブの下に待機した第2撮像手段の合焦面に上
記タ−ゲットを到達させて上記第1撮像手段と上記第2
撮像手段の位置を合わせる工程と、 上記プロ−ブの下に待機している第2撮像手段を退避位
置に戻す工程と、 上記基板の電極に上記プロ−ブを接続させて基板の検査
を行う工程とからなるプロ−ブ方法。
8. A probe card provided with a probe is disposed on an opposite surface of a substrate, and a first image capturing means for capturing an image of the probe and a second image capturing means for capturing an image of the substrate are provided. In a probe method for aligning the probe and the substrate, the first imaging is performed so that the focusing surface of the first imaging means reaches the probe after the target is retracted. Moving the means to obtain the coordinates of the probe, the step of moving the second image pickup means from the retracted position to under the probe, and the electrode of the substrate on the focusing surface of the second image pickup means. The step of moving the substrate so as to reach it, and obtaining the coordinates of the substrate; and the step of moving the substrate to the in-focus surface of the second image pickup means standing by under the probe so as to reach the first image pickup means and the first image pickup means. Two
The step of aligning the position of the image pickup means, the step of returning the second image pickup means standing by under the probe to the retracted position, and the inspection of the substrate by connecting the probe to the electrode of the substrate A probe method comprising the steps of:
【請求項9】 プロ−ブが設けられたプロ−ブカ−ドを
基板の対向面に配設し、上記プロ−ブを撮像する第1撮
像手段と上記基板を撮像する第2撮像手段により、上記
プロ−ブと上記基板の位置合わせを行うプロ−ブ方法に
おいて、 退避位置から上記プロ−ブの下に上記第2撮像手段を移
動させる工程と、 上記プロ−ブの下に待機した第2撮像手段の合焦面に上
記タ−ゲットを到達させて上記第1撮像手段と上記第2
撮像手段の位置を合わせる工程と、 上記第2撮像手段の合焦面に基板の電極が到達するよう
基板を移動させ、基板の座標を求める工程と、 上記プロ−ブの下に待機している第2撮像手段を退避位
置に戻す工程と、 上記タ−ゲットを退避させた後、上記第1撮像手段の合
焦面がプロ−ブに到達するように上記第1撮像手段を移
動させ、プロ−ブの座標を求める工程と、 上記基板の電極に上記プロ−ブを接続させて基板の検査
を行う工程とからなるプロ−ブ方法。
9. A probe card provided with a probe is disposed on an opposite surface of a substrate, and a first image capturing means for capturing an image of the probe and a second image capturing means for capturing an image of the substrate are provided. In a probe method for aligning the probe and the substrate, a step of moving the second image pickup means from the retracted position to under the probe, and a second step of waiting under the probe When the target reaches the focusing surface of the image pickup means, the first image pickup means and the second image pickup means
The step of aligning the position of the image pickup means, the step of moving the board so that the electrodes of the board reach the focusing surface of the second image pickup means, and obtaining the coordinates of the board, and waiting under the probe. A step of returning the second image pickup means to the retracted position; and after the target is retracted, the first image pickup means is moved so that the focusing surface of the first image pickup means reaches the probe. A probe method comprising a step of obtaining coordinates of the probe and a step of connecting the probe to the electrode of the substrate and inspecting the substrate.
【請求項10】 プロ−ブが設けられたプロ−ブカ−ド
を基板の対向面に配設し、上記プロ−ブを撮像する第1
撮像手段と上記基板を撮像する第2撮像手段により、上
記プロ−ブと上記基板の位置合わせを行うプロ−ブ方法
において、 退避位置から上記プロ−ブの下に上記第2撮像手段を移
動させる工程と、 上記第2撮像手段の合焦面に基板の電極が到達するよう
基板を移動させ、基板の座標を求める工程と、 上記プロ−ブの下に待機した第2撮像手段の合焦面に上
記タ−ゲットを到達させて上記第1撮像手段と上記第2
撮像手段の位置を合わせる工程と、 上記プロ−ブの下に待機している第2撮像手段を退避位
置に戻す工程と、 上記タ−ゲットを退避させた後、上記第1撮像手段の合
焦面がプロ−ブに到達するように上記第1撮像手段を移
動させ、プロ−ブの座標を求める工程と、 上記基板の電極に上記プロ−ブを接続させて基板の検査
を行う工程とからなるプロ−ブ方法。
10. A first probe for picking up an image of the probe by arranging a probe card provided with the probe on an opposite surface of a substrate.
In a probe method for aligning the probe and the substrate by an image capturing means and a second image capturing means for capturing an image of the substrate, the second image capturing means is moved from the retracted position to under the probe. And a step of moving the substrate so that the electrodes of the substrate reach the focusing surface of the second image pickup means to obtain the coordinates of the substrate, and a focusing surface of the second image pickup means standing by under the probe. The target to reach the first image pickup means and the second image pickup means.
The step of aligning the position of the image pickup means, the step of returning the second image pickup means standing by under the probe to the retracted position, the step of retracting the target, and the focusing of the first image pickup means From the step of moving the first image pickup means so that the surface reaches the probe and obtaining the coordinates of the probe, and the step of connecting the probe to the electrode of the substrate and inspecting the substrate. Probe method.
JP6085759A 1994-03-31 1994-03-31 Probe device Expired - Lifetime JP2986141B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP6085759A JP2986141B2 (en) 1994-03-31 1994-03-31 Probe device
EP95104818A EP0675366B1 (en) 1994-03-31 1995-03-31 Probe system and probe method
US08/414,590 US5585738A (en) 1994-03-31 1995-03-31 Probe system having vertical height detection and double focal image pickup coinciding with probe contact in height adjustment
KR1019950007253A KR100296646B1 (en) 1994-03-31 1995-03-31 Probe system and probe method
DE69533910T DE69533910T2 (en) 1994-03-31 1995-03-31 Sensor system and measuring method
TW084103365A TW278140B (en) 1994-03-31 1995-04-08
US08/634,675 US5640101A (en) 1994-03-31 1996-04-18 Probe system and probe method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6085759A JP2986141B2 (en) 1994-03-31 1994-03-31 Probe device

Publications (2)

Publication Number Publication Date
JPH08335612A true JPH08335612A (en) 1996-12-17
JP2986141B2 JP2986141B2 (en) 1999-12-06

Family

ID=13867799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6085759A Expired - Lifetime JP2986141B2 (en) 1994-03-31 1994-03-31 Probe device

Country Status (1)

Country Link
JP (1) JP2986141B2 (en)

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