JPH09511103A5 - - Google Patents

Info

Publication number
JPH09511103A5
JPH09511103A5 JP1996522200A JP52220096A JPH09511103A5 JP H09511103 A5 JPH09511103 A5 JP H09511103A5 JP 1996522200 A JP1996522200 A JP 1996522200A JP 52220096 A JP52220096 A JP 52220096A JP H09511103 A5 JPH09511103 A5 JP H09511103A5
Authority
JP
Japan
Prior art keywords
deeper
wafer
limit
case
depletion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996522200A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09511103A (ja
JP4143120B2 (ja
Filing date
Publication date
Priority claimed from SE9500146A external-priority patent/SE9500146D0/xx
Application filed filed Critical
Publication of JPH09511103A publication Critical patent/JPH09511103A/ja
Publication of JPH09511103A5 publication Critical patent/JPH09511103A5/ja
Application granted granted Critical
Publication of JP4143120B2 publication Critical patent/JP4143120B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP52220096A 1995-01-18 1996-01-17 シリコンカーバイドにおける半導体デバイス Expired - Lifetime JP4143120B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9500146A SE9500146D0 (sv) 1995-01-18 1995-01-18 Halvledarkomponent i kiselkarbid
SE9500146-7 1995-01-18
PCT/SE1996/000034 WO1996022610A1 (en) 1995-01-18 1996-01-17 Semiconductor device in silicon carbide

Publications (3)

Publication Number Publication Date
JPH09511103A JPH09511103A (ja) 1997-11-04
JPH09511103A5 true JPH09511103A5 (https=) 2008-06-26
JP4143120B2 JP4143120B2 (ja) 2008-09-03

Family

ID=20396853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52220096A Expired - Lifetime JP4143120B2 (ja) 1995-01-18 1996-01-17 シリコンカーバイドにおける半導体デバイス

Country Status (6)

Country Link
US (1) US5914499A (https=)
EP (1) EP0750789B1 (https=)
JP (1) JP4143120B2 (https=)
DE (1) DE69601981T2 (https=)
SE (1) SE9500146D0 (https=)
WO (1) WO1996022610A1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE512259C2 (sv) * 1998-03-23 2000-02-21 Abb Research Ltd Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6884644B1 (en) * 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3955396B2 (ja) 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
JP4320810B2 (ja) * 1998-11-30 2009-08-26 株式会社デンソー 炭化珪素半導体装置の製造方法
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6373076B1 (en) * 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6924215B2 (en) * 2002-05-29 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd Method of monitoring high tilt angle of medium current implant
US7157730B2 (en) * 2002-12-20 2007-01-02 Finisar Corporation Angled wafer rotating ion implantation
CN1802755B (zh) 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
CN101405871A (zh) * 2004-11-24 2009-04-08 美高森美公司 用于宽禁带功率器件的结终端结构
US7622358B2 (en) * 2005-09-30 2009-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with semi-insulating substrate portions and method for forming the same
JP5044117B2 (ja) * 2005-12-14 2012-10-10 関西電力株式会社 炭化珪素バイポーラ型半導体装置
CN101960606B (zh) * 2008-03-07 2013-12-04 三菱电机株式会社 碳化硅半导体器件及其制造方法
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
CN102570294B (zh) * 2012-01-12 2013-07-10 北京工业大学 一种真空解理大功率半导体激光器腔面氮钝化方法
JP6107430B2 (ja) * 2012-06-08 2017-04-05 豊田合成株式会社 半導体装置
JP6383516B2 (ja) * 2013-04-19 2018-08-29 ライトスピン テクノロジーズ、インク． 集積アバランシェ・フォトダイオード・アレイ
WO2016178678A1 (en) 2015-05-06 2016-11-10 Lightspin Technologies, Inc. Integrated avalanche photodiode arrays
EP3180799B1 (en) 2015-06-09 2018-12-26 ABB Schweiz AG Silicon carbide power semiconductor device comprising an edge termination and method for manufacturing said edge termination
DE102015115173A1 (de) * 2015-09-09 2017-03-09 Infineon Technologies Austria Ag Ein Halbleiterwafer, eine Implantationsvorrichtung zum Implantieren von Protonen und ein Verfahren zum Bilden eines Halbleiterbauelements
JP6557134B2 (ja) * 2015-12-24 2019-08-07 住重アテックス株式会社 半導体装置および半導体装置の製造方法
US10541300B2 (en) 2016-05-26 2020-01-21 General Electric Company Semiconductor device and method of making thereof
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices
US10608079B2 (en) 2018-02-06 2020-03-31 General Electric Company High energy ion implantation for junction isolation in silicon carbide devices
JP7312616B2 (ja) * 2019-06-14 2023-07-21 日産自動車株式会社 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131898C (https=) * 1965-03-26
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
US5270244A (en) * 1993-01-25 1993-12-14 North Carolina State University At Raleigh Method for forming an oxide-filled trench in silicon carbide
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5399883A (en) * 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same
WO1995032524A1 (en) * 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
US5650654A (en) * 1994-12-30 1997-07-22 International Business Machines Corporation MOSFET device having controlled parasitic isolation threshold voltage

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