JPH09330859A - Semiconductor production system - Google Patents

Semiconductor production system

Info

Publication number
JPH09330859A
JPH09330859A JP15131196A JP15131196A JPH09330859A JP H09330859 A JPH09330859 A JP H09330859A JP 15131196 A JP15131196 A JP 15131196A JP 15131196 A JP15131196 A JP 15131196A JP H09330859 A JPH09330859 A JP H09330859A
Authority
JP
Japan
Prior art keywords
suction
exhaust
reaction chamber
opening
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15131196A
Other languages
Japanese (ja)
Other versions
JP3971472B2 (en
Inventor
Wataru Takahashi
渉 高橋
Shuji Ueno
秀志 上野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15131196A priority Critical patent/JP3971472B2/en
Publication of JPH09330859A publication Critical patent/JPH09330859A/en
Application granted granted Critical
Publication of JP3971472B2 publication Critical patent/JP3971472B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor production system being employed in the reaction process in which contamination is prevented when a reaction chamber is opened to the atmosphere. SOLUTION: Nitrogen gas is fed to a reaction chamber 34 having a cover part 34a by opening a supply valve 35 and then the reaction chamber 34 is evacuated by means of an exhaust valve 39 and a vacuum pump 40 through external discharge piping 41. A detecting section 37 detects the inner pressure of the reaction chamber 34 and the pressure open to the atmosphere and then a suction means 43 discharges the gas through the external discharge piping 41 from the vacuum piping 38 side.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体製造におけ
る反応工程で使用される半導体製造装置に関する。近
年、半導体装置の製造にあたって、微細パターン化が進
んできて、一般的に高分解能で寸法及び形状の制御性の
よい半導体製造装置が用いられてきている。特に、クリ
ーンルーム内に設置されるエッチング装置、CVD装
置、イオン注入(IC)装置等の半導体製造装置では、
反応室を大気開放状態にして化学汚染や異臭を除去し、
反応室の内部治具交換、反応室の内部洗浄を定期的に行
っている。そのため、反応室の大気開放時における該反
応室によるクリーンルーム内の汚染等を防止する必要が
ある。
TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus used in a reaction step in semiconductor manufacturing. 2. Description of the Related Art In recent years, in the manufacture of semiconductor devices, fine patterning has been advanced, and generally, semiconductor manufacturing devices having high resolution and good controllability of size and shape have been used. In particular, in semiconductor manufacturing equipment such as etching equipment, CVD equipment, and ion implantation (IC) equipment installed in a clean room,
The reaction chamber is opened to the atmosphere to remove chemical pollution and offensive odors.
The jigs inside the reaction chamber are exchanged and the inside of the reaction chamber is cleaned regularly. Therefore, it is necessary to prevent contamination of the clean room by the reaction chamber when the reaction chamber is opened to the atmosphere.

【0002】[0002]

【従来の技術】図8に、従来の半導体製造における反応
工程で使用される製造装置の構成図を示す。図8におい
て、クリーンルーム11内に反応室12が設置されると
共に、ガス漏れ警報機13が設置される。また、クリー
ンルーム11の室外と室内を結ぶ外部排気ダクト14が
蛇腹等で移動自在に設置される。
2. Description of the Related Art FIG. 8 is a block diagram of a conventional manufacturing apparatus used in a reaction step in semiconductor manufacturing. In FIG. 8, a reaction chamber 12 is installed in a clean room 11, and a gas leak alarm 13 is installed. Further, an external exhaust duct 14 that connects the inside of the clean room 11 to the inside of the clean room 11 is movably installed by a bellows or the like.

【0003】反応室12は、上部が蓋部12aによって
開放自在であり、反応工程後に大気開放の準備を行うた
めに、窒素ガスを供給するための供給バルブ15を備え
るガス供給パイプ16が接続される。また、反応室12
内のガスを上記窒素ガスにより稀釈して排出するため
の、排気バルブ17を備える真空配管18が接続され
る。なお、図示しないが反応室12内には室内の気圧を
監視する気圧センサが設けられる。
An upper portion of the reaction chamber 12 is openable by a lid portion 12a, and a gas supply pipe 16 having a supply valve 15 for supplying nitrogen gas is connected to prepare for opening to the atmosphere after the reaction process. It Also, the reaction chamber 12
A vacuum pipe 18 equipped with an exhaust valve 17 is connected to dilute the gas inside with the nitrogen gas and discharge the diluted gas. Although not shown, an atmospheric pressure sensor for monitoring the atmospheric pressure inside the reaction chamber 12 is provided.

【0004】一方、上記真空配管18は、ポンプ室21
に延出されて商用電源で駆動する真空ポンプ22に接続
され、また該真空ポンプ22に外部排気を行う排気パイ
プ23が接続されたものである。上記のような構成で、
通常反応室12は、供給バルブ15が閉状態であり、排
気バルブ17が開状態であって、真空ポンプ22が動作
維持することで、いわゆる真空引きの状態で真空状態が
保たれる。また、排気バルブ17が閉状態であり、供給
バルブ15が開状態のときに窒素の供給が行われる。こ
のとき、反応室12の内部圧力が気圧センサで監視され
ており、内部圧力が大気圧になったときに供給バルブ1
5が閉状態にされるもので、該反応室12は大気圧状態
となる。
On the other hand, the vacuum pipe 18 has a pump chamber 21.
Is connected to a vacuum pump 22 that is extended to the outside and is driven by a commercial power source, and an exhaust pipe 23 that performs external exhaust is connected to the vacuum pump 22. With the above configuration,
In the normal reaction chamber 12, the supply valve 15 is closed, the exhaust valve 17 is open, and the vacuum pump 22 maintains the operation, so that the vacuum state is maintained in a so-called vacuum state. Further, nitrogen is supplied when the exhaust valve 17 is closed and the supply valve 15 is open. At this time, the internal pressure of the reaction chamber 12 is monitored by the atmospheric pressure sensor, and when the internal pressure reaches the atmospheric pressure, the supply valve 1
5 is closed, and the reaction chamber 12 is at atmospheric pressure.

【0005】上記真空引きと窒素供給とを数回繰り返し
た後に反応室12の蓋部12aを開放することで大気開
放となる。そして、外部排気ダクト14を反応室に近づ
けて化学汚染や異臭を吸引しながら、当該反応室12の
内部治具交換や内部洗浄を行うものである。
After the vacuuming and the nitrogen supply are repeated several times, the lid 12a of the reaction chamber 12 is opened to open the atmosphere. Then, while the external exhaust duct 14 is brought close to the reaction chamber to suck in chemical contamination and an offensive odor, the internal jig of the reaction chamber 12 is exchanged and the internal cleaning is performed.

【0006】[0006]

【発明が解決しようとする課題】しかし、反応室12を
大気開放する場合に、上記真空引きと窒素供給とを繰り
返して化学汚染や異臭を軽減する方法は、充分なガス供
給時間と真空引き時間を必要とし、しかもこれらを数回
繰り返すことから、異臭を軽減するには多大な準備時間
を費やす必要があるという問題がある。
However, when the reaction chamber 12 is opened to the atmosphere, the method of reducing the chemical contamination and the offensive odor by repeating the evacuation and the nitrogen supply is sufficient gas supply time and evacuation time. Moreover, since these are repeated several times, there is a problem that a great amount of preparation time is required to reduce the offensive odor.

【0007】また、化学汚染や異臭を吸引する外部排気
ダクト14を、その吸気口を反応室12の近傍に取り付
け、その排気口を外部に連通させるためのダクト工事を
クリーンルーム11に行わなければならない。さらに、
反応室12の真空引きと窒素供給を繰り返し行っても反
応室12からクリーンルーム11への化学汚染や異臭の
発散が軽減するに止まり、完全に防止することができな
いもので、場合によってはガス漏れ警報機13が感知
し、その原因究明等で生産工程を中断しなければならな
い事態を生じるという問題がある。
In addition, an external exhaust duct 14 for sucking in chemical pollution and offensive odors must be installed in the clean room 11 so that its intake port is installed near the reaction chamber 12 and the exhaust port is communicated with the outside. . further,
Even if the evacuation of the reaction chamber 12 and the supply of nitrogen are repeated, only chemical pollution or offensive odor emission from the reaction chamber 12 to the clean room 11 is reduced, which cannot be completely prevented. There is a problem in that the machine 13 may detect the situation, and the production process may have to be interrupted in order to investigate the cause.

【0008】そこで、本発明は上記課題に鑑みなされた
もので、反応室の大気開放時における汚染防止を図る半
導体製造装置を提供することを目的とする。
Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus for preventing contamination when the reaction chamber is open to the atmosphere.

【0009】[0009]

【課題を解決するための手段】上記課題を解決するため
に、請求項1では、開放自在の蓋部を備えて半導体製造
における所定の反応処理を行うための反応室を有し、該
反応室に所定ガスを供給する供給手段、及び該ガスと共
に該反応室内のガスを排出する排気手段を有する半導体
製造装置において、前記反応室の蓋部の開放を検知する
検知手段と、該検知手段による開放検知により該反応室
内のガスを前記排気手段側から吸引して外部に排出する
吸引手段と、を有して半導体製造装置が構成される。
In order to solve the above-mentioned problems, the first aspect of the present invention includes a reaction chamber having an openable lid for performing a predetermined reaction process in semiconductor manufacturing. In a semiconductor manufacturing apparatus having a supply means for supplying a predetermined gas to the chamber and an exhaust means for discharging the gas in the reaction chamber together with the gas, a detection means for detecting the opening of the lid of the reaction chamber and an opening by the detection means. A semiconductor manufacturing apparatus is configured to include a suction unit that sucks the gas in the reaction chamber from the exhaust unit side and discharges the gas to the outside upon detection.

【0010】請求項2では、請求項1記載の排気手段
は、前記反応室と排気口を結ぶ排気配管に介在される排
気駆動部と、前記吸引手段で開閉制御される排気開閉部
とを有し、該吸引手段の動作時に少なくとも該排気開閉
部が閉状態にされてなる。請求項3では、請求項1記載
の検知手段は、前記反応室の蓋部の開放を検知すると共
に、該蓋部開放による反応室内の圧力を検知してなる。
According to a second aspect of the present invention, the exhaust means according to the first aspect includes an exhaust drive section interposed in an exhaust pipe connecting the reaction chamber and an exhaust port, and an exhaust opening / closing section whose opening / closing is controlled by the suction section. However, at least the exhaust opening / closing portion is closed during the operation of the suction means. In the third aspect, the detection means according to the first aspect detects the opening of the lid of the reaction chamber and the pressure in the reaction chamber due to the opening of the lid.

【0011】請求項4では、請求項1〜3の何れか一項
において、前記吸引手段は、前記排気手段の前記排気配
管より分岐する吸引配管に設けられる吸引開閉部と、前
記反応室より内部ガスを吸引する吸引駆動部と、前記検
知手段からの検知に応じて該排気手段の排気を停止させ
ると共に、該吸引開閉部を開状態として該吸引駆動部を
駆動させる吸引制御部と、を有する。
According to a fourth aspect of the present invention, in any one of the first to third aspects, the suction means includes a suction opening / closing portion provided in a suction pipe branching from the exhaust pipe of the exhaust means, and an inside of the reaction chamber. A suction drive unit that sucks gas, and a suction control unit that stops the exhaust of the exhaust unit in response to detection by the detection unit and drives the suction drive unit by opening the suction opening / closing unit. .

【0012】請求項5では、請求項1〜3の何れか一項
において、前記吸引手段は、前記排気手段の排気を行う
前記排気駆動部を、排気時に排気動作させ、また前記反
応室の蓋部開放時に吸引動作させる駆動制御部と、前記
検知手段からの検知に応じて該駆動制御部を該排気駆動
部の排気動作又は吸引動作の制御を行わせるべく制御す
る吸引制御部と、を有する。
According to a fifth aspect of the present invention, in any one of the first to third aspects, the suction means causes the exhaust drive part for exhausting the exhaust means to perform an exhaust operation during exhaust, and the lid of the reaction chamber. And a suction control unit that controls the drive control unit to control the exhaust operation or the suction operation of the exhaust drive unit according to the detection from the detection unit. .

【0013】請求項6では、請求項1〜3の何れか一項
において、前記吸引手段は、前記排気手段の前記排気配
管より分岐して前記排気手段の排気を行う前記排気駆動
部に連通する吸引配管に設けられる吸引開閉部と、前記
検知手段からの検知に応じて該吸引開閉部を開状態とし
て該吸引駆動部を駆動させる吸引制御部と、該吸引配管
に設けられるものであって、前記反応室の蓋部の開放時
に該排気駆動部を駆動可能状態とする流路絞り部と、を
有する。
According to a sixth aspect of the present invention, in any one of the first to third aspects, the suction means communicates with the exhaust drive section that branches from the exhaust pipe of the exhaust means to exhaust the exhaust means. A suction opening / closing unit provided in the suction pipe, a suction control unit that drives the suction driving unit by opening the suction opening / closing unit in response to a detection from the detection unit, and a suction control unit provided in the suction pipe, And a flow path throttle unit that makes the exhaust drive unit drivable when the lid of the reaction chamber is opened.

【0014】上述のように請求項1乃至3の発明では、
蓋部を有する反応室に所定ガスを供給手段により供給
し、内部ガスを排気手段の例えば排気開閉部と排気駆動
部で排出するものであって、蓋部の開放と内部圧力を検
知手段で検知し、開放検圧、圧力検知に応じて吸引手段
が反応室内のガスを排気手段側から吸引、排出する。こ
れにより、反応室の大気開放による反応室の内部ガスを
吸引手段より排気することから、大気開放の準備時間の
短縮が図られ、外部の汚染を防止することが可能とな
る。
As described above, in the inventions of claims 1 to 3,
A predetermined gas is supplied by a supply means to a reaction chamber having a lid, and the internal gas is exhausted by, for example, an exhaust opening / closing portion and an exhaust driving portion of the exhaust means. The opening of the lid and the internal pressure are detected by the detecting means. Then, the suction means sucks and discharges the gas in the reaction chamber from the exhaust means side in response to the open pressure detection and the pressure detection. As a result, the gas inside the reaction chamber due to opening to the atmosphere in the reaction chamber is exhausted from the suction means, so that the preparation time for opening to the atmosphere can be shortened and external contamination can be prevented.

【0015】請求項4の発明では、吸引手段が、排気配
管より分岐する吸引配管に吸引開閉部及び吸引駆動部を
有し、吸引制御部で検知手段の検知で排気手段を停止さ
せると共に吸引開閉部を開として吸引駆動部を駆動させ
る。これにより、反応室の大気開放時の汚染防止を実現
することが可能となる。
In the invention of claim 4, the suction means has a suction opening / closing part and a suction driving part in the suction pipe branched from the exhaust pipe, and the suction control part stops the exhaust means by the detection of the detection means and opens / closes the suction means. The part is opened to drive the suction drive part. This makes it possible to prevent pollution when the reaction chamber is open to the atmosphere.

【0016】請求項5の発明では、吸引手段が、排気手
段の排気駆動部を排気動作、吸引動作を行わせる駆動制
御部を有し、吸引制御部で検知手段の検知に応じて駆動
制御部を排気動作又は吸引動作によって制御する。これ
により、反応室の大気開放時の汚染防止を実現すること
が可能となる。
According to the invention of claim 5, the suction means has a drive control section for causing the exhaust drive section of the exhaust means to perform the exhaust operation and the suction operation, and the drive control section responds to the detection of the detection means in the suction control section. Is controlled by an exhaust operation or a suction operation. This makes it possible to prevent pollution when the reaction chamber is open to the atmosphere.

【0017】請求項6の発明では、吸引手段が吸引開閉
部と吸引制御部と流路絞り部とを有し、反応室の大気開
放の検出で吸引制御部が吸引開閉部と流路絞り部との経
路で排気手段の排気駆動部で吸引、排出を行わせる。こ
れにより、反応室の大気開放時の汚染防止を実現するこ
とが可能となる。
In a sixth aspect of the invention, the suction means has a suction opening / closing section, a suction control section and a channel narrowing section, and the suction control section detects the opening of the reaction chamber to the atmosphere and the suction control section and the channel narrowing section. Suction and discharge are performed by the exhaust drive unit of the exhaust unit along the path. This makes it possible to prevent pollution when the reaction chamber is open to the atmosphere.

【0018】[0018]

【発明の実施の形態】図1に、本発明の第1実施例の原
理図を示す。図1は、半導体製造における例えばエッチ
ング、CVD(ケミカル気相成長)、II(イオン注
入)等の反応処理に使用される半導体製造装置31の原
理図を示したもので、クリーンルーム32内での設備と
ポンプ室33内での設備で構成される。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a principle diagram of a first embodiment of the present invention. FIG. 1 shows a principle diagram of a semiconductor manufacturing apparatus 31 used for a reaction process such as etching, CVD (chemical vapor deposition), II (ion implantation) in semiconductor manufacturing. Equipment in a clean room 32 is shown in FIG. And the equipment in the pump chamber 33.

【0019】クリーンルーム32内には、反応処理が行
われる反応室34が設置され、反応室34は上方に蓋部
34aが開閉自在に設けられる。この反応室34には、
例えば内部治具交換や内部洗浄等を行うために、反応処
理後に生じた処理残留物(化学汚染や異臭)を排出する
必要があり、該反応室34に処理残留物を稀釈するため
の例えば窒素ガスを室内に供給する供給手段としての供
給バルブ35を介在したガス供給配管36が取り付けら
れる。
A reaction chamber 34 in which a reaction process is carried out is installed in the clean room 32, and a lid portion 34a is provided above the reaction chamber 34 so as to be openable and closable. In this reaction chamber 34,
For example, it is necessary to discharge the processing residue (chemical contamination or offensive odor) generated after the reaction processing in order to replace the internal jig or clean the inside. For example, nitrogen for diluting the processing residue into the reaction chamber 34 is used. A gas supply pipe 36 having a supply valve 35 as a supply means for supplying gas into the room is attached.

【0020】また、反応室34の内部又は外部(蓋部3
4aも含む)の近傍に検知手段としての大気開放検知部
37が設けられる。この大気開放検知部37は、後述の
ように蓋部34aが開放状態となったことを検出する大
気開放センサと反応室34内が大気圧になったことを検
出する大気圧センサとを備える。
The inside or outside of the reaction chamber 34 (the lid 3
4a is also included), an atmosphere open detection unit 37 as detection means is provided. The atmosphere release detection unit 37 includes an atmosphere release sensor that detects that the lid 34a is in an open state and an atmospheric pressure sensor that detects that the inside of the reaction chamber 34 is at atmospheric pressure, as described later.

【0021】さらに、反応室34は、上記処理残留物を
排気するための排気配管である真空配管38が取り付け
られ、この真空配管38は排気開閉部である排気バルブ
39を介在させてポンプ室33の排気駆動部である真空
ポンプ40に連通され、該真空ポンプ40の他方側より
外部排気配管41が取り付けられて外部と連通される。
この真空ポンプ40は例えば商用電源(50Hz/60
Hz)で駆動されるものである。
Further, the reaction chamber 34 is attached with a vacuum pipe 38 which is an exhaust pipe for exhausting the processing residue, and the vacuum pipe 38 is provided with a pump chamber 33 with an exhaust valve 39 which is an exhaust opening / closing portion interposed therebetween. Is connected to a vacuum pump 40 which is an exhaust driving unit, and an external exhaust pipe 41 is attached from the other side of the vacuum pump 40 to communicate with the outside.
The vacuum pump 40 is, for example, a commercial power source (50 Hz / 60
Hz).

【0022】一方、真空配管38より分岐して吸引配管
42がポンプ室33内の吸引手段(一部クリーンルーム
32内に配置)43に連通され、該吸引手段43の他方
側より外部排気配管41に連通される。この吸引手段4
3は、大気開放検知部37からの所定の検知信号で、適
宜排気バルブ39を閉状態とするように制御すると共
に、反応室34内の処理残留物を吸引し外部排気配管4
1より外部に排出するものである。
On the other hand, the suction pipe 42 branched from the vacuum pipe 38 is connected to the suction means 43 (partly arranged in the clean room 32) in the pump chamber 33, and the other side of the suction means 43 is connected to the external exhaust pipe 41. Communicated. This suction means 4
Reference numeral 3 denotes a predetermined detection signal from the atmosphere open detection unit 37, which appropriately controls the exhaust valve 39 to be in a closed state, sucks the processing residue in the reaction chamber 34, and externally exhausts the exhaust pipe 4
1 is discharged to the outside.

【0023】このような半導体製造装置31は、反応室
34が蓋部34aで密閉状態において所定の反応処理が
行われ、処理後、また排気バルブ39を閉状態とし、供
給バルブ35を開状態として該反応室34に窒素ガスが
供給される。また、供給バルブ35を閉状態とし、排気
バルブ39を開状態として真空ポンプ40により該反応
室34内を真空状態にすることで当該反応室34内の窒
素ガスと処理残留物とを所定量外部に排出する。これら
を所定回数行って、反応室34の蓋部34aが開放され
る。
In such a semiconductor manufacturing apparatus 31, a predetermined reaction process is performed in a state where the reaction chamber 34 is closed by the lid 34a, and after the process, the exhaust valve 39 is closed and the supply valve 35 is opened. Nitrogen gas is supplied to the reaction chamber 34. Further, the supply valve 35 is closed, the exhaust valve 39 is opened, and the inside of the reaction chamber 34 is evacuated by the vacuum pump 40 to remove nitrogen gas and processing residues in the reaction chamber 34 by a predetermined amount. To discharge. By performing these a predetermined number of times, the lid 34a of the reaction chamber 34 is opened.

【0024】蓋部34aの開放は大気開放検知部37で
検知(反応室34内の気圧をも検知)することで吸引手
段43が動作して、真空配管38、吸引配管42を介し
て反応室34内の化学汚染や異臭が吸引され、外部排気
配管41より外部に排出される。すなわち、真空配管3
8、吸引配管42で排気を行いながら反応室34の内部
治具交換や内部洗浄が行われる。この場合、立上げに時
間を要する真空ポンプ40がダウン状態(真空動作が正
常に行われない状態)とならないように排気バルブ39
が閉状態とされる。
The opening of the lid portion 34a is detected by the atmosphere opening detection portion 37 (the atmospheric pressure in the reaction chamber 34 is also detected), whereby the suction means 43 operates and the reaction chamber is passed through the vacuum pipe 38 and the suction pipe 42. The chemical pollution and the offensive odor in 34 are sucked and discharged to the outside through the external exhaust pipe 41. That is, the vacuum pipe 3
8. The inner jig of the reaction chamber 34 is exchanged and the inner space thereof is cleaned while exhausting air through the suction pipe 42. In this case, the exhaust valve 39 is prevented so that the vacuum pump 40, which requires a long time to start up, does not go into a down state (a state where vacuum operation is not normally performed).
Is closed.

【0025】このように反応室34が大気開放になった
ときに、化学汚染や異臭を吸引手段43で真空配管38
から吸引配管42を介して外部排気配管43に吸引排気
を行うことから、クリーンルーム32内に化学汚染や異
臭の発散を防止することができる。また、大気開放の準
備としての窒素ガスの供給と真空ポンプ40による真空
引きの回数を減少させることができ、準備時間を短縮さ
せることができる。また、クリーンルーム32内に外部
排気ダクトの取付工事を不要とすることができると共
に、ガス漏れ警報等を作動させないようにできることか
ら生産ラインを中断させることもなく支障を来すことが
ないものである。
As described above, when the reaction chamber 34 is opened to the atmosphere, chemical pollution and offensive odors are sucked by the suction means 43 into the vacuum pipe 38.
Since the air is sucked and exhausted to the external exhaust pipe 43 through the suction pipe 42, it is possible to prevent the chemical pollution and the release of the offensive odor in the clean room 32. Further, the number of times of supplying nitrogen gas and vacuuming by the vacuum pump 40 in preparation for opening to the atmosphere can be reduced, and the preparation time can be shortened. Further, since it is not necessary to install an external exhaust duct in the clean room 32, and the gas leak alarm or the like is not activated, the production line is not interrupted and no trouble is caused. .

【0026】次に、図2に、本発明の第1実施例の構成
図を示す。図2に示す半導体製造装置31は、図1に示
す吸引手段43を吸引開閉部である吸引バルブ51,吸
引駆動部である吸引ファン52,及び吸引制御部53で
構成したものである。すなわち、真空配管51より分岐
する吸引配管42に吸引バルブ51を介在させて吸引フ
ァン52に連通させ、該吸引ファン52の他方側を外部
排気配管41に連通させる。また、吸引制御部53は、
大気開放検知部37からの検知信号に基づいて吸引ファ
ン52を駆動制御すると共に、吸引バルブ51及び排気
バルブ39の開閉を制御する。他の構成は、図1と同様
であり、説明を省略する。
Next, FIG. 2 shows a block diagram of the first embodiment of the present invention. The semiconductor manufacturing apparatus 31 shown in FIG. 2 comprises the suction means 43 shown in FIG. 1 with a suction valve 51 as a suction opening / closing section, a suction fan 52 as a suction driving section, and a suction control section 53. That is, the suction pipe 42 branched from the vacuum pipe 51 is connected to the suction fan 52 through the suction valve 51, and the other side of the suction fan 52 is connected to the external exhaust pipe 41. Further, the suction control unit 53
The suction fan 52 is driven and controlled based on a detection signal from the atmosphere open detection unit 37, and the opening / closing of the suction valve 51 and the exhaust valve 39 is controlled. Other configurations are the same as those in FIG. 1, and the description thereof will be omitted.

【0027】なお、反応室34における蓋部34aが閉
塞状態のときに、窒素ガス供給のための供給バルブ35
の開閉制御、及び真空引きの排気バルブ39の開閉制御
は、別の図示しない制御部により行われるものである。
ここで、図3に、図2の大気開放検知部及び吸引制御部
の回路図を示す。図3において、大気開放検知部37
は、大気開放センサ61と大気圧センサ62とで構成さ
れるもので、他の回路構成は吸引制御部53を構成す
る。大気開放センサ61は、発光ダイオードLEDとフ
ォトトランジスタPTで構成されて、発光ダイオードの
アノードが抵抗R1を介して電源電圧Vdに接続され、
カソードが接地される。また、フォトトランジスタPT
のコレクタは抵抗R2を介して電源電圧Vcに接続され
ると共に、インバータ回路INV1の入力端に接続さ
れ、エミッタは接地される。
When the lid 34a in the reaction chamber 34 is closed, a supply valve 35 for supplying nitrogen gas is provided.
And the opening / closing control of the evacuation valve 39 for evacuation are performed by another control unit (not shown).
Here, FIG. 3 shows a circuit diagram of the atmosphere release detection unit and the suction control unit of FIG. In FIG. 3, the atmosphere release detection unit 37
Is composed of an atmosphere open sensor 61 and an atmospheric pressure sensor 62, and the other circuit configuration constitutes a suction control section 53. The atmosphere open sensor 61 is composed of a light emitting diode LED and a phototransistor PT, and the anode of the light emitting diode is connected to the power supply voltage Vd via a resistor R1,
The cathode is grounded. In addition, the phototransistor PT
Is connected to the power supply voltage Vc via the resistor R2, is connected to the input terminal of the inverter circuit INV1, and the emitter is grounded.

【0028】一方、大気圧センサ62は例えばスイッチ
ング動作をするものとして、大気圧を検知したときに導
通状態となる。この大気圧センサ62の一方の端子は接
地され、他方の端子は抵抗R3を介して電源電圧Vcに
接続されると共に、インバータ回路INV2の入力端に
接続される。
On the other hand, the atmospheric pressure sensor 62, which performs a switching operation, becomes conductive when it detects atmospheric pressure. One terminal of the atmospheric pressure sensor 62 is grounded, and the other terminal is connected to the power supply voltage Vc via the resistor R3 and also connected to the input terminal of the inverter circuit INV2.

【0029】上記2つのインバータ回路INV1,IN
V2のそれぞれの出力端は2入力のアンドゲート回路A
ND1の2つの入力端にそれぞれ接続され、該アンドゲ
ート回路AND1の出力端は制御信号として吸引バルブ
51及び吸引ファン52に出力されるように接続され
る。なお、アンドゲート回路AND1の出力は、後述の
インバータ制御部又は絞り弁の制御信号として接続され
るものである。
The above two inverter circuits INV1 and INV
Each output terminal of V2 is a 2-input AND gate circuit A
The two input terminals of ND1 are respectively connected, and the output terminal of the AND gate circuit AND1 is connected so as to be output to the suction valve 51 and the suction fan 52 as a control signal. The output of the AND gate circuit AND1 is connected as a control signal of an inverter control unit or a throttle valve described later.

【0030】また、アンドゲート回路AND1の出力端
は、インバータ回路INV3の入力端に接続され、該イ
ンバータ回路INV3の出力端は2入力のアンドゲート
回路AND2の一方の入力端に接続される。該アンドゲ
ート回路AND2の他方の入力端には、上述の図示しな
い制御部からの排気バルブ39の開/閉信号が入力され
るように接続される。そして、アンドゲート回路AND
2の出力端は、制御信号として排気バルブ39に出力さ
れるように接続されるものである。
The output terminal of the AND gate circuit AND1 is connected to the input terminal of the inverter circuit INV3, and the output terminal of the inverter circuit INV3 is connected to one input terminal of the 2-input AND gate circuit AND2. The other input end of the AND gate circuit AND2 is connected so that an open / close signal of the exhaust valve 39 from the above-mentioned control unit (not shown) is input. And AND gate circuit AND
The output terminal of 2 is connected so as to be output to the exhaust valve 39 as a control signal.

【0031】上記のような回路において、反応室34が
蓋部34aで閉塞状態のときには、大気開放センサ61
の発光ダイオードLEDからの光は遮ぎられてフォトト
ランジスタPTでは受光されず、インバータ回路INV
1の出力は「L」となる。この場合、供給バルブ35が
開状態とされ、反応室34内に窒素ガスが供給されて大
気圧となり、大気圧センサ62が検知してインバータ回
路INV2の出力が「H」となってもアンドゲート回路
AND1の出力が「L」であり、吸引バルブ51及び吸
引ファン52には駆動の制御信号は出力されない。
In the above circuit, when the reaction chamber 34 is closed by the lid portion 34a, the atmosphere open sensor 61 is provided.
The light from the light emitting diode LED of is blocked by the phototransistor PT and is not received by the inverter circuit INV.
The output of 1 is "L". In this case, the supply valve 35 is opened, nitrogen gas is supplied into the reaction chamber 34 to reach atmospheric pressure, and even if the output of the inverter circuit INV2 becomes "H" as detected by the atmospheric pressure sensor 62 and the AND gate. The output of the circuit AND1 is “L”, and the drive control signal is not output to the suction valve 51 and the suction fan 52.

【0032】また、アンドゲート回路AND1の出力が
「L」であるから、インバータ回路INV3の出力は
「H」となる。従って、アンドゲート回路AND2に入
力される排気バルブ39の開/閉信号に応じてアンドゲ
ート回路AND2からは排気バルブ39に開/閉の制御
信号が出力される。
Since the output of the AND gate circuit AND1 is "L", the output of the inverter circuit INV3 is "H". Therefore, according to the open / close signal of the exhaust valve 39 input to the AND gate circuit AND2, the open / close control signal is output from the AND gate circuit AND2 to the exhaust valve 39.

【0033】一方、反応室34の蓋部34aが開放され
ると、大気開放センサ61の発光ダイオードLEDの光
がフォトトランジスタPTのベースをバイアスしてオン
状態となることでインバータ回路INV1の出力が
「H」となる。また、蓋部34aの開放によって反応室
34が大気圧になると、大気圧センサ62がオン状態と
なってインバータ回路INV2の出力が「H」となる。
従って、アンドゲート回路AND1の出力が「H」とな
って、吸引バルブ51を開放状態とし、吸引ファン52
を駆動するように制御信号を出力する。
On the other hand, when the lid portion 34a of the reaction chamber 34 is opened, the light of the light emitting diode LED of the atmosphere open sensor 61 biases the base of the phototransistor PT to the ON state, so that the output of the inverter circuit INV1 is output. It becomes "H". When the reaction chamber 34 becomes atmospheric pressure by opening the lid 34a, the atmospheric pressure sensor 62 is turned on and the output of the inverter circuit INV2 becomes "H".
Therefore, the output of the AND gate circuit AND1 becomes “H”, the suction valve 51 is opened, and the suction fan 52 is opened.
A control signal is output to drive the.

【0034】これにより、反応室34内の化学汚染や異
臭がクリーンルーム32に発散することなく、外部排気
配管41より排出されるものである。この場合、アンド
ゲート回路AND1の出力が「H」であることからイン
バータ回路INV3の出力は「L」であり、アンドゲー
ト回路AND2の出力は、入力される排気バルブ39の
開/閉の信号に拘らず、「L」となって排気バルブ39
を閉状態とするものである。
As a result, the chemical pollution and the offensive odor in the reaction chamber 34 are discharged to the clean room 32 through the external exhaust pipe 41. In this case, since the output of the AND gate circuit AND1 is “H”, the output of the inverter circuit INV3 is “L”, and the output of the AND gate circuit AND2 is the input signal for opening / closing the exhaust valve 39. Regardless, it becomes "L" and the exhaust valve 39
Is closed.

【0035】そこで、図4に、反応室内の圧力状態の説
明図を示す。また、図5に、反応室内の圧力状態におけ
る動作タイミングチャートを示す。図4及び図5は反応
室の圧力状態が遷移するシーケンス(S1〜S7)を示
したもので、図4及び図5のS1においては、排気バル
ブ39が開状態(図5(B))のときに真空ポンプ40
により反応室34は真空状態である。この状態から排気
バルブ39を閉状態とすると共に(図5(B))、供給
バルブ35を開状態として窒素ガスを供給すると、反応
室34内は徐々に気圧が上昇し(S2,図5(A))、
大気圧まで上昇して維持状態となる(S3)。この状態
では、図3に示す大気圧センサ62はオン状態となる
(図5(D))。
Therefore, FIG. 4 shows an explanatory view of the pressure state in the reaction chamber. Further, FIG. 5 shows an operation timing chart in the pressure state in the reaction chamber. 4 and 5 show a sequence (S1 to S7) of transition of the pressure state of the reaction chamber. In S1 of FIGS. 4 and 5, the exhaust valve 39 is in the open state (FIG. 5 (B)). Sometimes vacuum pump 40
Therefore, the reaction chamber 34 is in a vacuum state. When the exhaust valve 39 is closed from this state (FIG. 5 (B)) and the supply valve 35 is opened to supply nitrogen gas, the atmospheric pressure in the reaction chamber 34 gradually rises (S2, FIG. A)),
The pressure rises to atmospheric pressure and the maintenance state is reached (S3). In this state, the atmospheric pressure sensor 62 shown in FIG. 3 is turned on (FIG. 5 (D)).

【0036】このとき、反応室34の蓋部34aを開放
状態にすると、図3に示す大気開放センサ61がオン状
態となる(S4,図5(C))。そして、吸引バルブ5
1を開状態(図5(E))として吸引ファン52を駆動
させることにより吸引動作が行われる(S4,図5
(F))。すなわち、反応室34内の化学汚染や異臭が
クリーンルーム32内には発散せず外部排気配管41よ
り窒素ガスと共に排出されるもので、この状態で反応室
34の内部治具交換や内部洗浄が行われる。
At this time, when the lid portion 34a of the reaction chamber 34 is opened, the atmosphere open sensor 61 shown in FIG. 3 is turned on (S4, FIG. 5C). And the suction valve 5
1 is opened (FIG. 5 (E)) and the suction fan 52 is driven to perform the suction operation (S4, FIG. 5).
(F)). That is, the chemical contamination and the offensive odor in the reaction chamber 34 are not emitted into the clean room 32 and are discharged together with the nitrogen gas through the external exhaust pipe 41. In this state, the internal jig exchange and internal cleaning of the reaction chamber 34 are performed. Be seen.

【0037】続いて、反応室34の内部治具交換等が終
了すると、蓋部34aが閉状態とされ、大気開放センサ
61はオフ状態となる(S5,図5(C))。この状態
では、反応室34内は大気圧状態であり、大気圧センサ
62はオン状態のままである(図5(D))。そして、
排気バルブ39を閉状態とすることで真空ポンプ40に
よる反応室34内の真空引きが開始される(S6)。こ
のときに大気圧センサ62がオフ状態となる(図5
(D))。反応室34内が真空状態となっても、排気バ
ルブ39が開状態を維持して真空ポンプ40により該反
応室34の真空状態を維持するものである。
Subsequently, when the exchange of the internal jig in the reaction chamber 34 is completed, the lid 34a is closed and the atmosphere open sensor 61 is turned off (S5, FIG. 5C). In this state, the inside of the reaction chamber 34 is in the atmospheric pressure state, and the atmospheric pressure sensor 62 remains in the ON state (FIG. 5 (D)). And
By closing the exhaust valve 39, evacuation of the reaction chamber 34 by the vacuum pump 40 is started (S6). At this time, the atmospheric pressure sensor 62 is turned off (see FIG. 5).
(D)). Even if the inside of the reaction chamber 34 is in a vacuum state, the exhaust valve 39 is maintained in the open state and the vacuum pump 40 maintains the vacuum state in the reaction chamber 34.

【0038】なお、大気開放センサ61は、透過型又は
反射型の光センサを用いた場合を図3に示しており、蓋
部34aに遮蔽板を設けることで何れの型の光センサの
使用を適宜可能とすることができる。また、大気開放時
に吸引動作を一時的に停止したい場合には、大気開放セ
ンサ61の発光ダイオードLEDの電源電圧Vdを一時
的に遮断する手動スイッチを設けてもよい。さらに、吸
引配管42の何れかの部分にフィルタ等を設けてもよ
く、これによる異物混入を防止することができる。これ
らのことは、以下の実施例においても同様である。
3 shows the case where a transmission type or a reflection type optical sensor is used as the atmosphere open sensor 61, and any type of optical sensor can be used by providing a cover plate on the lid 34a. It can be appropriately enabled. Further, when it is desired to temporarily stop the suction operation when opening to the atmosphere, a manual switch that temporarily shuts off the power supply voltage Vd of the light emitting diode LED of the atmosphere opening sensor 61 may be provided. Further, a filter or the like may be provided on any part of the suction pipe 42, and it is possible to prevent foreign matter from entering due to this. The same applies to the following examples.

【0039】次に、図6に、本発明の第2実施例の構成
図を示す。図6に示す半導体製造装置31は、図2に示
す吸引配管42を、真空配管38における排気バルブ3
9の入力側と出力側にバイパスするように連通させたも
ので、真空ポンプ40を商用電源ではなく、吸引制御部
53で駆動制御されるインバータ制御部54により駆動
する構成として吸引ファン52の機能を真空ポンプ40
で兼用させたものである。すなわち、吸引手段43を、
吸引配管42、吸引バルブ51、吸引制御部53、イン
バータ制御部54、及び真空ポンプ40(排気手段と兼
用)で構成したものである。なお、他の構成は図2と同
様であり、説明を省略する。
Next, FIG. 6 shows a block diagram of a second embodiment of the present invention. In the semiconductor manufacturing apparatus 31 shown in FIG. 6, the suction pipe 42 shown in FIG.
The function of the suction fan 52 is such that the vacuum pump 40 is connected not by the commercial power source but by the inverter control unit 54 that is driven and controlled by the suction control unit 53. The vacuum pump 40
It has been used for both. That is, the suction means 43
The suction pipe 42, the suction valve 51, the suction control unit 53, the inverter control unit 54, and the vacuum pump 40 (also serving as an exhaust unit) are used. The rest of the configuration is similar to that of FIG. 2, and the description is omitted.

【0040】上記真空ポンプ40は、例えば誘導電動機
を駆動源としたものを用いるものとして、これを商用電
源(50Hz/60Hz)で駆動することで真空引きを
行うが、反応室34が大気開放時には真空引きも吸引を
も行うことができない。そこで、インバータ制御部54
が真空ポンプ40に対して、真空引きのときには商用電
源と同じ周波数の電源を供給し、吸引の場合には商用電
源周波数より小さい周波数(例えば20〜30Hz)の
電源を供給することで回転数を減少させて吸引ファンの
代用をさせるものである。この場合、インバータ制御部
54には、吸引制御部53により大気開放検知部37の
検知に応じて周波数指示等の制御が行われる。
The vacuum pump 40 uses, for example, an induction motor as a drive source and is evacuated by driving it with a commercial power source (50 Hz / 60 Hz). However, when the reaction chamber 34 is open to the atmosphere. Neither evacuation nor suction can be performed. Therefore, the inverter control unit 54
Supplies to the vacuum pump 40 a power source having the same frequency as the commercial power source when vacuuming, and supplies a power source having a frequency (for example, 20 to 30 Hz) smaller than the commercial power source frequency when sucking, thereby increasing the rotation speed. It is intended to reduce the number of suction fans instead of suction fans. In this case, the inverter control unit 54 is controlled by the suction control unit 53 such as a frequency instruction according to the detection of the atmosphere open detection unit 37.

【0041】これにより、図2と同様の作用、効果を得
ることができると共に、吸引ファンが不要となってコス
ト低減を図ることができるものである。なお、吸引配管
42の径は、真空配管38の径の例えば半分とすること
で真空ポンプ40における吸引動作の負荷を軽減させて
いるが、真空配管38の径を真空引きと吸引との同時に
できる範囲に設定することで、吸引バルブ51及び吸引
配管42を省くことができる。この場合、排気バルブ3
9の吸引バルブ51を機能的に兼用させるものである。
As a result, the same operation and effect as in FIG. 2 can be obtained, and the suction fan is not required, and the cost can be reduced. Although the diameter of the suction pipe 42 is set to, for example, half the diameter of the vacuum pipe 38 to reduce the load of the suction operation in the vacuum pump 40, the diameter of the vacuum pipe 38 can be simultaneously evacuated and sucked. By setting the range, the suction valve 51 and the suction pipe 42 can be omitted. In this case, the exhaust valve 3
The suction valve 51 of 9 also serves as a function.

【0042】次に、図7に、本発明の第3実施例の構成
図を示す。図7に示す半導体製造装置31は、図6に示
す吸引配管42中に流路絞り部としての絞り弁55を設
け、インバータ制御部54を省略したもので、他の構成
は図6と同様である。上記絞り弁55は例えば可変オリ
フィス等であり、吸引制御部53によって反応室34の
大気開放時に駆動される。
Next, FIG. 7 shows a block diagram of a third embodiment of the present invention. The semiconductor manufacturing apparatus 31 shown in FIG. 7 is provided with a throttle valve 55 as a flow passage throttle unit in the suction pipe 42 shown in FIG. 6 and omits the inverter control unit 54. Other configurations are the same as those in FIG. is there. The throttle valve 55 is, for example, a variable orifice, and is driven by the suction controller 53 when the reaction chamber 34 is open to the atmosphere.

【0043】この場合、真空ポンプ40は商用電源(5
0Hz/60Hz)で駆動されるものであるが、反応室
34の大気開放時には絞り弁55で該真空ポンプの負荷
を軽減して、上述の吸引ファンと同様の吸引を行わせる
ことができるものである。これにより、図2と同様の作
用、効果を得ることができると共に、吸引ファンやイン
バータ制御部が不要となってコスト低減を図ることがで
きるものである。
In this case, the vacuum pump 40 is a commercial power source (5
It is driven at 0 Hz / 60 Hz), but when the reaction chamber 34 is opened to the atmosphere, the throttle valve 55 can reduce the load on the vacuum pump to perform suction similar to the suction fan described above. is there. As a result, the same operation and effect as those in FIG. 2 can be obtained, and the suction fan and the inverter control unit are not required, and the cost can be reduced.

【0044】[0044]

【発明の効果】以上のように請求項1乃至3の発明によ
れば、蓋部を有する反応室に所定ガスを供給手段により
供給し、内部ガスを排気手段の例えば排気開閉部と排気
駆動部で排出するものであって、蓋部の開放と内部圧力
を検知手段で検知し、開放検圧、圧力検知に応じて吸引
手段が反応室内のガスを排気手段側から吸引、排出する
ことにより、反応室の大気開放による反応室の内部ガス
を吸引手段より排気することから、大気開放の準備時間
の短縮が図られ、外部の汚染を防止することができる。
As described above, according to the inventions of claims 1 to 3, a predetermined gas is supplied to the reaction chamber having a lid by the supply means, and the internal gas is exhausted, for example, an exhaust opening / closing section and an exhaust drive section. The opening of the lid and the internal pressure are detected by the detection means, and the suction means sucks and discharges the gas in the reaction chamber from the exhaust means side according to the open pressure detection and the pressure detection. Since the internal gas of the reaction chamber is exhausted by the suction means when the reaction chamber is opened to the atmosphere, the preparation time for opening to the atmosphere can be shortened and external contamination can be prevented.

【0045】請求項4の発明によれば、吸引手段が、排
気配管より分岐する吸引配管に吸引開閉部及び吸引駆動
部を有し、吸引制御部で検知手段の検知で排気手段を停
止させると共に吸引開閉部を開として吸引駆動部を駆動
させることにより、反応室の大気開放時の汚染防止を実
現することができる。
According to the invention of claim 4, the suction means has a suction opening / closing part and a suction drive part in the suction pipe branched from the exhaust pipe, and the suction control part stops the exhaust means by detection of the detection means. By opening the suction opening / closing portion and driving the suction driving portion, it is possible to prevent contamination when the reaction chamber is opened to the atmosphere.

【0046】請求項5の発明によれば、吸引手段が、排
気手段の排気駆動部を排気動作、吸引動作を行わせる駆
動制御部を有し、吸引制御部で検知手段の検知に応じて
駆動制御部を排気動作又は吸引動作によって制御するこ
とにより、反応室の大気開放時の汚染防止を実現するこ
とができる。
According to the fifth aspect of the invention, the suction means has a drive control section for causing the exhaust drive section of the exhaust means to perform the exhaust operation and the suction operation, and the suction control section drives the exhaust drive section in response to the detection by the detection means. By controlling the control unit by the exhaust operation or the suction operation, it is possible to prevent contamination when the reaction chamber is opened to the atmosphere.

【0047】請求項6の発明によれば、吸引手段が吸引
開閉部と吸引制御部と流路絞り部とを有し、反応室の大
気開放の検出で吸引制御部が吸引開閉部と流路絞り部と
の経路で排気手段の排気駆動部で吸引、排出を行わせる
ことにより、反応室の大気開放時の汚染防止を実現する
ことができる。
According to the sixth aspect of the present invention, the suction means has a suction opening / closing section, a suction control section, and a flow path restricting section, and the suction control section detects the opening of the reaction chamber to the atmosphere and the suction control section and the flow path. It is possible to prevent pollution when the reaction chamber is opened to the atmosphere by causing the exhaust drive unit of the exhaust unit to perform suction and discharge through the path to the throttle unit.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例の原理図である。FIG. 1 is a principle diagram of a first embodiment of the present invention.

【図2】本発明の第1実施例の構成図である。FIG. 2 is a configuration diagram of a first embodiment of the present invention.

【図3】図2の大気開放検知部及び吸引制御部の回路図
である。
FIG. 3 is a circuit diagram of an atmosphere open detection unit and a suction control unit of FIG.

【図4】反応室内の圧力状態の説明図である。FIG. 4 is an explanatory diagram of a pressure state in the reaction chamber.

【図5】反応室内の圧力状態における動作タイミングチ
ャートである。
FIG. 5 is an operation timing chart in a pressure state in the reaction chamber.

【図6】本発明の第2実施例の構成図である。FIG. 6 is a configuration diagram of a second embodiment of the present invention.

【図7】本発明の第3実施例の構成図である。FIG. 7 is a configuration diagram of a third embodiment of the present invention.

【図8】従来の半導体製造における反応工程で使用され
る製造装置の構成図である。
FIG. 8 is a block diagram of a manufacturing apparatus used in a conventional semiconductor manufacturing reaction process.

【符号の説明】[Explanation of symbols]

31 半導体製造装置 32 クリーンルーム 33 ポンプ室 34 反応室 34a 蓋部 35 供給バルブ 37 大気開放検知部 38 真空配管 39 排気バルブ 40 真空ポンプ 41 外部排気配管 42 吸引配管 43 吸引手段 51 吸引バルブ 52 吸引ファン 53 吸引制御部 54 インバータ制御部 55 絞り弁 61 大気開放センサ 62 大気圧センサ 31 Semiconductor Manufacturing Equipment 32 Clean Room 33 Pump Room 34 Reaction Chamber 34a Lid 35 Supply Valve 37 Atmosphere Opening Detection Section 38 Vacuum Piping 39 Exhaust Valve 40 Vacuum Pump 41 External Exhaust Piping 42 Suction Piping 43 Suction Means 51 Suction Valve 52 Suction Fan 53 Suction Control unit 54 Inverter control unit 55 Throttle valve 61 Atmosphere opening sensor 62 Atmospheric pressure sensor

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 開放自在の蓋部を備えて半導体製造にお
ける所定の反応処理を行うための反応室を有し、該反応
室に所定ガスを供給する供給手段、及び該ガスと共に該
反応室内のガスを排出する排気手段を有する半導体製造
装置において、 前記反応室の蓋部の開放を検知する検知手段と、 該検知手段による開放検知により該反応室内のガスを前
記排気手段側から吸引して外部に排出する吸引手段と、 を有することを特徴とする半導体製造装置。
1. A reaction chamber having an openable lid portion for performing a predetermined reaction process in semiconductor manufacturing, a supply means for supplying a predetermined gas to the reaction chamber, and a reaction chamber in the reaction chamber together with the gas. In a semiconductor manufacturing apparatus having an exhaust means for exhausting gas, a detection means for detecting the opening of the lid of the reaction chamber, and the detection of the opening by the detection means sucks the gas in the reaction chamber from the exhaust means side to the outside. A semiconductor manufacturing apparatus, comprising:
【請求項2】 請求項1記載の排気手段は、前記反応室
と排気口を結ぶ排気配管に介在される排気駆動部と、前
記吸引手段で開閉制御される排気開閉部とを有し、該吸
引手段の動作時に少なくとも該排気開閉部が閉状態にさ
れてなることを特徴とする半導体製造装置。
2. The exhaust means according to claim 1, further comprising an exhaust drive section interposed in an exhaust pipe connecting the reaction chamber and an exhaust port, and an exhaust opening / closing section controlled to be opened / closed by the suction section. A semiconductor manufacturing apparatus, wherein at least the exhaust opening / closing portion is closed when the suction means operates.
【請求項3】 請求項1記載の検知手段は、前記反応室
の蓋部の開放を検知すると共に、該蓋部開放による反応
室内の圧力を検知してなることを特徴とする半導体製造
装置。
3. The semiconductor manufacturing apparatus according to claim 1, wherein the detecting means detects the opening of the lid of the reaction chamber and the pressure in the reaction chamber due to the opening of the lid.
【請求項4】 請求項1〜3の何れか一項において、前
記吸引手段は、 前記排気手段の前記排気配管より分岐する吸引配管に設
けられる吸引開閉部と、 前記反応室より内部ガスを吸引する吸引駆動部と、 前記検知手段からの検知に応じて該排気手段の排気を停
止させると共に、該吸引開閉部を開状態として該吸引駆
動部を駆動させる吸引制御部と、 を有することを特徴とする半導体製造装置。
4. The suction unit according to claim 1, wherein the suction unit is a suction opening / closing unit provided in a suction pipe branched from the exhaust pipe of the exhaust unit, and sucks an internal gas from the reaction chamber. And a suction control unit that stops the exhaust of the exhaust unit according to the detection from the detection unit and drives the suction drive unit by opening the suction opening / closing unit. Semiconductor manufacturing equipment.
【請求項5】 請求項1〜3の何れか一項において、前
記吸引手段は、 前記排気手段の排気を行う前記排気駆動部を、排気時に
排気動作させ、また前記反応室の蓋部開放時に吸引動作
させる駆動制御部と、 前記検知手段からの検知に応じて該駆動制御部を該排気
駆動部の排気動作又は吸引動作の制御を行わせるべく制
御する吸引制御部と、 を有することを特徴とする半導体製造装置。
5. The suction unit according to claim 1, wherein the suction unit causes the exhaust drive unit that exhausts the exhaust unit to perform an exhaust operation during exhaust, and also when the lid of the reaction chamber is opened. And a suction control unit that controls the drive control unit to control the exhaust operation or the suction operation of the exhaust drive unit according to the detection from the detection unit. Semiconductor manufacturing equipment.
【請求項6】 請求項1〜3の何れか一項において、前
記吸引手段は、 前記排気手段の前記排気配管より分岐して前記排気手段
の排気を行う前記排気駆動部に連通する吸引配管に設け
られる吸引開閉部と、 前記検知手段からの検知に応じて該吸引開閉部を開状態
として該吸引駆動部を駆動させる吸引制御部と、 該吸引配管に設けられるものであって、前記反応室の蓋
部の開放時に該排気駆動部を駆動可能状態とする流路絞
り部と、 を有することを特徴とする半導体製造装置。
6. The suction pipe according to any one of claims 1 to 3, wherein the suction means is connected to the suction pipe branching from the exhaust pipe of the exhaust means and communicating with the exhaust drive unit for exhausting the exhaust means. A suction opening / closing section provided, a suction control section for driving the suction driving section by opening the suction opening / closing section in response to detection by the detection means, and a suction control section provided in the suction pipe. And a flow path restricting section that makes the exhaust drive section drivable when the lid section of the semiconductor manufacturing apparatus is opened.
JP15131196A 1996-06-12 1996-06-12 Semiconductor manufacturing equipment Expired - Lifetime JP3971472B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15131196A JP3971472B2 (en) 1996-06-12 1996-06-12 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15131196A JP3971472B2 (en) 1996-06-12 1996-06-12 Semiconductor manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH09330859A true JPH09330859A (en) 1997-12-22
JP3971472B2 JP3971472B2 (en) 2007-09-05

Family

ID=15515885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15131196A Expired - Lifetime JP3971472B2 (en) 1996-06-12 1996-06-12 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JP3971472B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100514256B1 (en) * 1999-11-30 2005-09-15 엘지.필립스 엘시디 주식회사 Method Of Preventing Particle In Chamber
CN114720803A (en) * 2022-04-05 2022-07-08 苏州中科科美科技有限公司 Environment forming method and test system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100514256B1 (en) * 1999-11-30 2005-09-15 엘지.필립스 엘시디 주식회사 Method Of Preventing Particle In Chamber
CN114720803A (en) * 2022-04-05 2022-07-08 苏州中科科美科技有限公司 Environment forming method and test system
CN114720803B (en) * 2022-04-05 2023-01-31 苏州中科科美科技有限公司 Environment forming method and test system

Also Published As

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