JPH09321428A - Photo-via formation - Google Patents

Photo-via formation

Info

Publication number
JPH09321428A
JPH09321428A JP13481196A JP13481196A JPH09321428A JP H09321428 A JPH09321428 A JP H09321428A JP 13481196 A JP13481196 A JP 13481196A JP 13481196 A JP13481196 A JP 13481196A JP H09321428 A JPH09321428 A JP H09321428A
Authority
JP
Japan
Prior art keywords
insulating layer
layer
plating
photo
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13481196A
Other languages
Japanese (ja)
Other versions
JP3816982B2 (en
Inventor
Isao Shimada
功 嶋田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP13481196A priority Critical patent/JP3816982B2/en
Publication of JPH09321428A publication Critical patent/JPH09321428A/en
Application granted granted Critical
Publication of JP3816982B2 publication Critical patent/JP3816982B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a photo-via formation method which does not cause poor continuity at corner parts. SOLUTION: An insulating film comprises two layers of an insulating layer 13 (a lower layer) which is hard to be roughened and an adhesive layer 14 (an upper layer) which is easy to be roughened, and a hole is formed with one exposure and development, and roughened, so that a via diameter is enlarged at the part of adhesive layer 14, thus a stepped photo-via whose opening is enlarged larger than its bottom is formed. Thanks to the step form, a plating liquid is circulated at plating, and current density is dispersed, and a required plating thickness is obtained even at the corner parts. So that poor continuity is hard to occur and high reliability is obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、プリント配線板の
製造におけるフォトビアの形成に関し、さらに詳細に
は、ビア内でのめっきの付き回りをよくしてコンタクト
の信頼性を向上させたフォトビア形成方法に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the formation of photo vias in the manufacture of printed wiring boards, and more particularly, a method of forming photo vias that improves the contact reliability by improving the distribution of plating within the vias. It is about.

【0002】[0002]

【従来の技術】従来、プリント配線板において内導体層
と外導体層とのコンタクトを取るためのフォトビアは、
次のようにして形成されている。すなわち、図5に示す
ように導体部11を有する基板12上を絶縁層24で覆
い、フォトリソグラフィでビアの形状を形成した後、粗
化を施してから、図6に示すように銅等の金属のめっき
を施して、絶縁層24をめっき層26で覆う。このめっ
き層26により、内導体層である導体部11と外導体層
とのコンタクトが取られるのである。
2. Description of the Related Art Conventionally, a photo via for making contact between an inner conductor layer and an outer conductor layer in a printed wiring board has been
It is formed as follows. That is, as shown in FIG. 5, the substrate 12 having the conductor portion 11 is covered with the insulating layer 24, the via shape is formed by photolithography, and then roughened. Metal plating is applied to cover the insulating layer 24 with the plating layer 26. The plated layer 26 makes contact between the conductor portion 11 which is the inner conductor layer and the outer conductor layer.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、前記従
来技術に係るフォトビアの形成には、コンタクトの信頼
性が不足するという問題があった。すなわち図6に見る
ように、フォトビアにおける底面と側壁との境目のコー
ナー部分でめっき層26が薄くなりがちで、導体部11
とのコンタクトが不十分となる場合がある。このため、
コンタクトの信頼性が不足するのである。特に、高集積
度の基板のように、フォトビアの形状のアスペクト比が
高い場合にこのコンタクトの問題が顕著である。この原
因としては、めっき液の回り込みと電流分布との2つが
ある。
However, the formation of the photovia according to the above-mentioned conventional technique has a problem that the reliability of the contact is insufficient. That is, as shown in FIG. 6, the plating layer 26 tends to be thin at the corner portion of the boundary between the bottom surface and the side wall of the photo via, and the conductor portion 11
There may be insufficient contact with. For this reason,
The reliability of contacts is insufficient. In particular, when the aspect ratio of the shape of the photo via is high, as in the case of a highly integrated substrate, this contact problem is remarkable. There are two causes for this: the wraparound of the plating solution and the current distribution.

【0004】まず、めっき液の回り込みについて説明す
る。すなわち、フォトビア内部ではめっき液が渦流をな
す傾向がありビア外との液交換が不十分となるので、め
っきにより銅イオンが消費されるとその濃度がビア外よ
り希くなってしまうのである。このためフォトビア内部
ではイオン不足によりめっき層26の厚みが外部よりも
薄くなる。コーナー部分は、底面の中央付近と比べても
特にめっき液が回り込みにくいのでこの現象が著しく、
コンタクト不良の大きな原因となる。
First, the wraparound of the plating solution will be described. That is, since the plating solution tends to form a vortex inside the photo via and the liquid exchange with the outside of the via becomes insufficient, the concentration of copper ions becomes less than that outside the via when the copper ions are consumed by plating. Therefore, the thickness of the plating layer 26 becomes thinner inside the photo via due to the lack of ions than at the outside. This phenomenon is remarkable at the corners because the plating solution is especially hard to get around compared to near the center of the bottom surface.
It is a major cause of contact failure.

【0005】続いて電流分布について説明する。めっき
時の電流分布はめっき付着量分布に直結するが、カソー
ドである基板側表面の近傍における電場分布(等電位面
の間隔)に依存する。そしてフォトビアの形状のため、
上面と側壁とのエッジ部分近傍で等電位面の間隔が小さ
く電場が強い(エッジ効果)ので、その部分の電流密度
も高くなる。反面、フォトビア底面近傍では等電位面の
間隔が大きく電場が弱いので、その部分の電流密度は低
い。この電流密度の問題もまた、底面の中央付近よりも
むしろコーナー部分で顕著であり、その部分のめっき付
着量が不足してコンタクト不良が生ずる大きな原因とな
る。
Next, the current distribution will be described. The current distribution during plating is directly connected to the coating amount distribution, but depends on the electric field distribution (interval between equipotential surfaces) in the vicinity of the substrate-side surface that is the cathode. And because of the shape of the photo via,
Since the distance between the equipotential surfaces is small near the edge portion between the upper surface and the side wall and the electric field is strong (edge effect), the current density at that portion also becomes high. On the other hand, in the vicinity of the bottom surface of the photo via, since the equipotential surface is large and the electric field is weak, the current density at that portion is low. This problem of current density is also more prominent in the corner portion than in the vicinity of the center of the bottom surface, which is a major cause of contact failure due to insufficient plating adhesion amount at that portion.

【0006】この対策としては例えば、特公平7−10
5593号公報に記載されているように、フォトビア形
成のためのフォトリソグラフィを2回(3回以上でもよ
い)に分けて行うことにより、上面開口部の径を底面部
分の径よりも大きくしたステップ形状のフォトビアとす
ることが考えられる。こうすれば、めっき液の回り込み
の問題、電流分布の問題ともに大幅に緩和され、コーナ
ー部分でのめっき厚不足を解消してコンタクトの信頼性
を確保できるものである。しかしながらこの方法では、
フォトビア形成のためにフォトリソグラフィを2回以上
行い、それぞれ異なるパターンマスクを使用するので、
マスクのコストが高く工程数も多いという別の問題があ
る。
As measures against this, for example, Japanese Patent Publication No. 7-10
As described in Japanese Patent No. 5593, a step in which the diameter of the top opening is made larger than the diameter of the bottom portion by performing the photolithography for forming the photo via in two steps (may be three times or more). It is conceivable that the photo via is shaped. In this way, both the problem of the wraparound of the plating solution and the problem of the current distribution are significantly alleviated, and the lack of the plating thickness at the corners can be eliminated to ensure the reliability of the contacts. However, with this method,
Since photolithography is performed twice or more to form photo vias and different pattern masks are used,
There is another problem that the cost of the mask is high and the number of steps is large.

【0007】本発明は前記従来の問題点を解消するため
になされたものであり、フォトビアのコーナー部分のめ
っき厚不足を解消して内導体層とのコンタクトを確実に
した信頼性の高いフォトビアを1回のフォトリソグラフ
ィで形成できるフォトビア形成方法を提供することを目
的とする。
The present invention has been made in order to solve the above-mentioned conventional problems, and provides a highly reliable photo via which eliminates the insufficient plating thickness at the corner portion of the photo via and ensures contact with the inner conductor layer. It is an object of the present invention to provide a method of forming a photo via that can be formed by one-time photolithography.

【0008】[0008]

【課題を解決するための手段】前記目的を達成するため
請求項1の発明は、絶縁層に設けた開口部を通じて内層
導体部を外部と電気的にコンタクトさせるフォトビアを
形成する方法であって、表面に内層導体部を設けた基板
を第1の絶縁層で被覆する第1被覆工程と、前記第1の
絶縁層で被覆された基板を前記第1の絶縁層より粗化さ
れやすい材質の第2の絶縁層で被覆する第2被覆工程
と、前記第1の絶縁層および前記第2の絶縁層を貫通す
る開口部を形成して前記内層導体部を露出させる現像工
程と、少なくとも前記第2の絶縁層を粗化することによ
り前記第2の絶縁層の開口径を前記第1の絶縁層の開口
径より大きくして段差を形成する段差形成工程とを含む
ことを特徴とする。
To achieve the above object, the invention of claim 1 is a method of forming a photo via for electrically contacting an inner layer conductor portion with the outside through an opening provided in an insulating layer. A first coating step of coating a substrate having an inner-layer conductor portion on its surface with a first insulating layer; and a step of coating a substrate coated with the first insulating layer with a material that is more easily roughened than the first insulating layer. A second coating step of coating with a second insulating layer, a developing step of forming an opening penetrating the first insulating layer and the second insulating layer to expose the inner layer conductor portion, and at least the second And a step forming step of forming a step by roughening the insulating layer to make the opening diameter of the second insulating layer larger than the opening diameter of the first insulating layer.

【0009】この形成方法では、基板として表面に内層
導体部が設けられているものを用いる。これは通例、銅
張積層板を出発材料としてサブトラクティブ法によりエ
ッチングしてパターン形成したものである。第1被覆工
程では、内層導体部も含めてこの基板を第1の絶縁層で
被覆する。続いて第2被覆工程で第1の絶縁層の上に第
2の絶縁層を被せ、これにより基板は絶縁層で2重に覆
われる。この2つの絶縁層は、後に粗化を受けることに
なるが、第1の絶縁層と比較して第2の絶縁層の方がよ
り強く粗化されるように材質が選択されている。
In this forming method, a substrate having an inner layer conductor portion provided on the surface is used as the substrate. This is usually patterned by etching a copper clad laminate as a starting material by a subtractive method. In the first coating step, the substrate including the inner layer conductor portion is coated with the first insulating layer. Then, in the second coating step, the second insulating layer is covered on the first insulating layer, so that the substrate is doubly covered with the insulating layer. The materials of the two insulating layers are selected so that the second insulating layer is roughened more strongly than the first insulating layer, though the two insulating layers will be roughened later.

【0010】2重の絶縁層で基板を被覆したら、粗化を
行う前に絶縁層の現像工程を行い、フォトビアの形状を
形成する。すなわち、第1および第2の絶縁層を貫通す
る穴を形成してその穴の部分で内層導体部を露出させ
る。これは通例、第1および第2の絶縁層を感光性の材
質のものとし、フォトリソグラフィで穴となる部分以外
を感光により硬化させ、感光していない部分の第1およ
び第2の絶縁層を除去して行う。あるいは第1および第
2の絶縁層自体を感光性のものとする代わりに、別途フ
ォトレジストを塗布して感光層を形成し、感光層の現像
後にエッチングで第1および第2の絶縁層を加工しても
よい。かかる現像工程により第1および第2の絶縁層を
貫通して形成されたビア形状は、その側壁がほぼ垂直で
あり、第1の絶縁層と第2の絶縁層との境目部分にも特
に段差はない。
After the substrate is covered with the double insulating layer, a developing step of the insulating layer is performed before roughening to form the shape of the photo via. That is, a hole penetrating the first and second insulating layers is formed, and the inner layer conductor portion is exposed at the hole. This is usually because the first and second insulating layers are made of a photosensitive material, and the portions other than the portions that will become holes in photolithography are cured by exposure to light, and the first and second insulating layers in the unexposed portions are Remove and do. Alternatively, instead of making the first and second insulating layers themselves photosensitive, a photoresist is separately applied to form a photosensitive layer, and the first and second insulating layers are processed by etching after development of the photosensitive layer. You may. The via shape formed by penetrating the first and second insulating layers by such a developing process has sidewalls that are substantially vertical, and a step is especially formed at the boundary between the first insulating layer and the second insulating layer. There is no.

【0011】そこで次に段差形成工程を行う。すなわち
粗化である。粗化を行うと、前記のように上層である第
2の絶縁層の方が下層である第1の絶縁層よりも強く粗
化されるので、その結果、第1の絶縁層におけるビア径
より第2の絶縁層におけるビア径の方が大きくなる。こ
れにより、上面開口部の径を底面部分の径よりも大きく
したステップ形状のフォトビアが形成される。
Then, a step forming step is performed next. That is, it is roughening. When the roughening is performed, the second insulating layer that is the upper layer is roughened more strongly than the first insulating layer that is the lower layer as described above, and as a result, the via diameter in the first insulating layer is larger than that of the first insulating layer. The via diameter in the second insulating layer is larger. As a result, a step-shaped photo via is formed in which the diameter of the top opening is larger than the diameter of the bottom portion.

【0012】かくして形成されたフォトビアにめっきを
施すと、上面開口部の径が底面部分の径より大きいステ
ップ形状なので、メッキ時にビア内外のめっき液が十分
交換されてビア内でイオン不足が生じることはなく、ま
たエッジ効果に起因する電流密度の不均一も軽いので、
めっきの付き回りがよく底面と側壁との境目のコーナー
部分にも十分にめっき層が形成され、コンタクトが良好
にとられ信頼性が高い。めっきの代わりにスパッタリン
グ等を行う場合にも、シャドウイング効果が軽いので付
き回りがよく、コンタクトが良好である。なお、かかる
フォトビアの形成にフォトマスクは1枚で済んでいる。
When the photo via thus formed is plated, the diameter of the top opening is larger than the diameter of the bottom, so that the plating solution inside and outside the via is sufficiently exchanged during plating, and ions are deficient in the via. And the non-uniformity of the current density due to the edge effect is also light,
It has good plating coverage and a sufficient plating layer is formed even at the corners of the boundary between the bottom surface and the side wall, resulting in good contact and high reliability. Even when sputtering or the like is performed instead of plating, the shadowing effect is light, and therefore the coverage is good and the contact is good. Note that only one photomask is required to form such photo vias.

【0013】また、請求項2の発明は、請求項1に記載
するフォトビア形成方法であって、前記第1の絶縁層が
シリカの粉末を含有し、前記第2の絶縁層がエポキシの
粉末を含有することを特徴とする。
A second aspect of the present invention is the method for forming a photo via according to the first aspect, wherein the first insulating layer contains silica powder and the second insulating layer contains epoxy powder. It is characterized by containing.

【0014】この場合には、段差形成工程の際、第1の
絶縁層に含有されているシリカの粉末が粗化剤に溶けな
いのに対し、第2の絶縁層に含有されているエポキシの
粉末が粗化剤に溶けるので、第2の絶縁層の方が第1の
絶縁層よりも強く粗化を受け、上面開口部の径が底面部
分の径より大きいステップ形状のフォトビアが形成され
る。
In this case, the silica powder contained in the first insulating layer does not dissolve in the roughening agent during the step forming step, whereas the epoxy powder contained in the second insulating layer does not dissolve in the roughening agent. Since the powder dissolves in the roughening agent, the second insulating layer undergoes roughening more strongly than the first insulating layer, and a step-shaped photo via in which the diameter of the top opening is larger than that of the bottom is formed. .

【0015】[0015]

【発明の実施の形態】以下、本発明に係る実施の形態を
図面を参照して詳細に説明する。まず、銅張積層板に公
知のサブトラクティブ法によりエッチングを施して、表
層の銅板を所定のパターンに加工する。このパターン加
工により積算板上に内層導体層(厚さは15〜20μm
程度)が形成される。そして、この銅張積層板に絶縁層
および接着層をロールコータを用いて塗布する。絶縁層
および接着層の膜厚は、ともに40μm程度である。従
って図1に断面図で示すように、基板12上に絶縁層1
3が存在して導体部11(内層導体層)もこれに覆わ
れ、さらに絶縁層13が接着層14で覆われた構造とな
る。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the drawings. First, the copper clad laminate is etched by a known subtractive method to process the surface copper plate into a predetermined pattern. By this pattern processing, the inner conductor layer (thickness: 15 to 20 μm) is formed on the integrating plate.
Degree) is formed. Then, an insulating layer and an adhesive layer are applied to this copper clad laminate using a roll coater. Both the insulating layer and the adhesive layer have a thickness of about 40 μm. Therefore, as shown in the cross-sectional view of FIG.
3 is present, the conductor portion 11 (inner conductor layer) is also covered with this, and the insulating layer 13 is further covered with the adhesive layer 14.

【0016】ここで、絶縁層13および接着層14の材
質について説明する。これらの材質は、ともにエポキシ
樹脂ワニスをマトリックスとしてこれに粉末状のフィラ
ーを混合させたものである。
Here, the materials of the insulating layer 13 and the adhesive layer 14 will be described. Both of these materials have an epoxy resin varnish as a matrix and are mixed with a powdery filler.

【0017】絶縁層13に用いられるマトリックスは、
クレゾールノボラック型エポキシ樹脂(共栄社製)60
重量部、ビスフェノールA型エポキシ樹脂(油化シェル
製)40重量部、イミダゾール型硬化剤(四国化学製)
5重量部、感光性モノマー(共栄社製)5重量部、光開
始剤(関東化学製)5重量部、光増感剤0.5重量部を
主成分とする混合物である。そしてフィラーは、シリカ
微粉末(龍森製、平均粒径約3μm)である。このマト
リックスとフィラー(40重量部)とを混練して500
ps程度に粘度調整して用いる。
The matrix used for the insulating layer 13 is
Cresol novolac type epoxy resin (manufactured by Kyoeisha) 60
Parts by weight, bisphenol A type epoxy resin (made by Yuka Shell) 40 parts by weight, imidazole type curing agent (made by Shikoku Chemicals)
It is a mixture containing 5 parts by weight, 5 parts by weight of a photosensitive monomer (manufactured by Kyoeisha), 5 parts by weight of a photoinitiator (manufactured by Kanto Kagaku), and 0.5 parts by weight of a photosensitizer. The filler is silica fine powder (Tatsumori, average particle size about 3 μm). Knead the matrix and the filler (40 parts by weight) to obtain 500
Adjust the viscosity to about ps before use.

【0018】一方、接着層14は、絶縁層13のマトリ
ックスとほぼ同じものをマトリックスとして用い、フィ
ラーとしてはエポキシ微粉末(東レ製、平均粒径約5μ
m20重量部+平均粒径約0.5μm10重量部)を用
いる。そしてこのマトリックスとフィラーとを混練して
800ps程度に粘度調整し、塗布する。なお、絶縁層
13、接着層14とも、塗布後に80℃15分間乾燥さ
せ、塗布面に指で触れても指にワニスが付着しない程度
まで溶剤成分を揮発させる。
On the other hand, the adhesive layer 14 uses substantially the same matrix as the insulating layer 13 as a matrix, and the filler is epoxy fine powder (manufactured by Toray, average particle size: about 5 μm).
m 20 parts by weight + average particle size of about 0.5 μm 10 parts by weight). Then, the matrix and the filler are kneaded to adjust the viscosity to about 800 ps and applied. Both the insulating layer 13 and the adhesive layer 14 are dried at 80 ° C. for 15 minutes after application, and the solvent component is volatilized to such an extent that the varnish does not adhere to the finger even if the application surface is touched with the finger.

【0019】次に絶縁層13および接着層14の露光を
行う。すなわち、パターンが印刷されたマスク17を介
して平行光を照射して、絶縁層13および接着層14の
うちマスク17のパターン以外の部分を感光させる。マ
スク17には、フォトビアとなる部分に不透明なパター
ンが印刷され、その部分は光を遮るようになっている。
これにより、光が当たった部分の絶縁層13および接着
層14が感光により硬化する。次いで現像を行う。すな
わち、未感光部分の絶縁層13および接着層14を溶剤
で除去すると、図2に符号15で示すように、絶縁層1
3および接着層14を貫通する穴が形成され、その部分
で導体部11が露出する。この状態では穴15の側壁は
垂直であり、穴15の径は絶縁層13の部分でも接着層
14の部分でもほぼ同一である。
Next, the insulating layer 13 and the adhesive layer 14 are exposed. That is, parallel light is irradiated through the mask 17 on which the pattern is printed to expose the portions of the insulating layer 13 and the adhesive layer 14 other than the pattern of the mask 17 to light. An opaque pattern is printed on a portion of the mask 17 that will be a photo via, and that portion blocks light.
As a result, the portions of the insulating layer 13 and the adhesive layer 14 exposed to light are cured by exposure to light. Then, development is performed. That is, when the insulating layer 13 and the adhesive layer 14 in the unexposed portion are removed with a solvent, as shown by reference numeral 15 in FIG.
3 and a hole penetrating the adhesive layer 14 are formed, and the conductor portion 11 is exposed at that portion. In this state, the side wall of the hole 15 is vertical, and the diameter of the hole 15 is substantially the same in both the insulating layer 13 portion and the adhesive layer 14 portion.

【0020】続いて粗化を行う。図2に示す状態のもの
をクロム酸または過マンガン酸等の腐食液に浸すと、絶
縁層13および接着層14がエッチングされて表面に微
細な凹凸が形成される。このとき、絶縁層13には、フ
ィラーとして高耐食性のシリカ微粉末が添加されている
ので、絶縁層13はあまり粗化されない。これに対し接
着層14のフィラーは腐食液に容易に溶けるエポキシ微
粉末であるため、接着層14は絶縁層13よりはるかに
粗化が進行し、エッチングを多く受ける。このため、絶
縁層13の部分ではビア径が粗化前とあまり変わらない
のに対し、その上部の接着層14ではエッチングのため
ビア径が粗化前より若干広がった状態となる。この状態
を図3に示す。図3では、絶縁層13の部分のビア径を
1 で示し、接着層14の部分のビア径をd2で示して
いる。d1が図2の状態でのビア径とほとんど変わって
いないのに対しd2 はそれより大きくなっている。これ
により、絶縁層13の部分と接着層14の部分との間に
段差があり、底部よりも開口部が大きく広がったステッ
プ形状のフォトビアが形成される。
Then, roughening is performed. When the state shown in FIG. 2 is immersed in a corrosive liquid such as chromic acid or permanganate, the insulating layer 13 and the adhesive layer 14 are etched to form fine irregularities on the surface. At this time, since fine silica powder having high corrosion resistance is added as a filler to the insulating layer 13, the insulating layer 13 is not roughened so much. On the other hand, since the filler of the adhesive layer 14 is an epoxy fine powder that is easily dissolved in the corrosive liquid, the adhesive layer 14 is much roughened and is much etched than the insulating layer 13. Therefore, in the insulating layer 13, the via diameter is not much different from that before the roughening, whereas in the adhesive layer 14 thereabove, the via diameter is slightly wider than that before the roughening due to etching. This state is shown in FIG. In FIG. 3, the via diameter in the insulating layer 13 portion is indicated by d 1 , and the via diameter in the adhesive layer 14 portion is indicated by d 2 . Although d 1 is almost the same as the via diameter in the state of FIG. 2, d 2 is larger than that. As a result, there is a step between the insulating layer 13 and the adhesive layer 14, and a step-shaped photo via is formed in which the opening is wider than the bottom.

【0021】そして、めっきを施す。図3に示す状態の
ものをまず触媒液に浸して絶縁層13および接着層14
に活性を付与し、そして無電解銅めっきにより0.5〜
1μm厚のめっき層を形成してから電気銅めっきにより
その上に10〜20μm厚のめっき層16を形成する。
すると、図4に示すように、フォトビア底面の導体部1
1からフォトビア側壁、接着層14の上面に至るまで銅
めっき層16が形成される。この銅めっき層16により
導体部11と外部の導体層との電気コンタクトが確保さ
れる。
Then, plating is performed. First, the insulating layer 13 and the adhesive layer 14 in the state shown in FIG.
0.5 to 0.5% by electroless copper plating.
After forming a plating layer having a thickness of 1 μm, a plating layer 16 having a thickness of 10 to 20 μm is formed thereon by electrolytic copper plating.
Then, as shown in FIG. 4, the conductor portion 1 on the bottom surface of the photo via is formed.
The copper plating layer 16 is formed from 1 to the sidewall of the photo via and the upper surface of the adhesive layer 14. The copper plating layer 16 secures electrical contact between the conductor portion 11 and an external conductor layer.

【0022】上記のようなフォトビアは、底部よりも開
口部が大きく広がったステップ形状をしていることによ
り以下のような特徴を有している。すなわち、フォトビ
ア形成後のめっき時において、底面と側壁との境目のコ
ーナー部分にも必要な厚みを有するめっき層が形成さ
れ、このためコンタクト不良が生じることがなく信頼性
が高い。このようにコーナー部分でめっき層が薄くなら
ない理由は、ビア内への銅イオンの供給と電流密度の分
布とにある。すなわち、ステップ形状で開口部が底部よ
り広いことから、めっき時にビア内外でめっき液がよく
循環するので、ビア内にも銅イオンが補充され不足なく
供給されるからである。また、ステップ形状であること
より、側壁と上面とのエッジ部分への電流集中が緩和さ
れる結果、電流密度が小さくなりがちなコーナー部分の
電流密度が大きくなるからである。従って、底面部分と
側壁さらには上面部分とで銅めっき層16が確実に連続
しており、コンタクトの信頼性が高い。
The above-described photo via has the following characteristics because it has a step shape in which the opening is wider than the bottom. That is, at the time of plating after the formation of the photo via, a plating layer having a required thickness is formed at the corner portion of the boundary between the bottom surface and the side wall, and therefore contact failure does not occur and reliability is high. The reason why the plating layer does not become thin at the corners is the supply of copper ions into the via and the distribution of the current density. That is, since the opening has a step shape and the opening is wider than the bottom, the plating solution circulates well inside and outside the via during plating, and copper ions are replenished and supplied into the via without any shortage. Further, since the step shape reduces the current concentration on the edge portions of the side wall and the upper surface, the current density at the corner portion, which tends to decrease the current density, increases. Therefore, the copper plating layer 16 is surely continuous at the bottom surface portion, the side wall, and the upper surface portion, and the contact reliability is high.

【0023】また、このようなステップ形状のフォトビ
アを形成するにあたり、絶縁層13と接着層14との耐
粗化性の相違を利用しているので、露光は1回で済み従
ってマスク17も1枚で済む。このため工程数が過大に
なることもなく、マスク費用が増大することもない。
Further, in forming such a step-shaped photo via, the difference in the roughening resistance between the insulating layer 13 and the adhesive layer 14 is utilized, so that the exposure only needs to be performed once. Only need one. Therefore, the number of steps is not excessive and the mask cost is not increased.

【0024】以上詳細に説明したように、本実施の形態
によれば、底部よりも開口部が大きく広がったステップ
形状のフォトビアを、1枚のフォトマスクで形成できる
ので、めっき時にビア内に銅イオンが十分に補充され、
電流密度の集中もなく、従ってコンタクトの信頼性が高
いフォトビアを低コストで形成できるものである。
As described in detail above, according to the present embodiment, a step-shaped photo via having an opening larger than the bottom can be formed with one photomask, so that copper can be formed in the via during plating. Ions are well replenished,
Therefore, it is possible to form a photo via having a high contact reliability without concentration of current density at low cost.

【0025】なお、前記実施の形態は、本発明を何ら限
定するものでないことはもちろんである。従って本発明
は、その要旨を逸脱しない範囲内で種々の改良、変形が
可能であることは当然である。例えば前記実施の形態に
おいて、絶縁層13および接着層14をそれ自体感光性
の材質のものとして直接マスク17でパターニングを行
ったが、代わりにそれ自体は非感光性として別途フォト
レジストを用いてパターニングするようにしてもよい。
また、フォトビア形成後に電気めっき等の湿式法で銅め
っき層16を形成したが、蒸着やスパッタリングのよう
な気相法で形成してもよく、この場合もステップ形状に
よりシャドウイングが軽減されるので、コンタクトの信
頼性が高い。
Of course, the above embodiment does not limit the present invention. Therefore, it goes without saying that the present invention can be improved and modified in various ways without departing from the scope of the invention. For example, in the above-described embodiment, the insulating layer 13 and the adhesive layer 14 are directly patterned by the mask 17 by using a photosensitive material, but instead, they are non-photosensitive themselves and are patterned by using a separate photoresist. You may do it.
Further, although the copper plating layer 16 is formed by a wet method such as electroplating after forming the photo via, it may be formed by a vapor phase method such as vapor deposition or sputtering. In this case, too, the step shape reduces shadowing. , Contact reliability is high.

【0026】[0026]

【発明の効果】以上説明した通り本発明のフォトビア形
成方法によれば、コーナー部分のめっき厚不足を解消し
て内導体層と外部とのコンタクトを確実にとることがで
きるフォトビアを1回のフォトリソグラフィで形成する
ことができ、信頼性の向上とコスト低減とに大きな効果
を奏するものである。
As described above, according to the method for forming a photo via of the present invention, a photo via can be formed once by making it possible to reliably make contact between the inner conductor layer and the outside by eliminating the insufficient plating thickness at the corner portion. It can be formed by lithography, and has a great effect on improvement of reliability and cost reduction.

【図面の簡単な説明】[Brief description of drawings]

【図1】本実施の形態において、絶縁層および接着層形
成後に露光を行う状態を示す断面図である。
FIG. 1 is a cross-sectional view showing a state in which exposure is performed after forming an insulating layer and an adhesive layer in the present embodiment.

【図2】本実施の形態において、露光後に現像した状態
を示す断面図である。
FIG. 2 is a cross-sectional view showing a state of development after exposure in the present embodiment.

【図3】本実施の形態において、現像後に粗化を行った
状態を示す断面図である。
FIG. 3 is a cross-sectional view showing a state where roughening is performed after development in the present embodiment.

【図4】本実施の形態において、粗化後にめっきを行っ
た状態を示す断面図である。
FIG. 4 is a cross-sectional view showing a state where plating is performed after roughening in the present embodiment.

【図5】従来技術において、現像後に粗化を行った状態
を示す断面図である。
FIG. 5 is a cross-sectional view showing a state where roughening is performed after development in the conventional technique.

【図6】従来技術において、粗化後にめっきを行った状
態を示す断面図である。
FIG. 6 is a cross-sectional view showing a state where plating is performed after roughening in a conventional technique.

【符号の説明】[Explanation of symbols]

11 内層導体部 13 絶縁層(第1の絶縁層) 14 接着層(第2の絶縁層) d1 絶縁層におけるビア径 d2 接着層におけるビア径11 Inner Layer Conductor 13 Insulating Layer (First Insulating Layer) 14 Adhesive Layer (Second Insulating Layer) d 1 Via Diameter in Insulating Layer d 2 Via Diameter in Adhesive Layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 絶縁層に設けた開口部を通じて内層導体
部を外部と電気的にコンタクトさせるフォトビアを形成
する方法において、 表面に内層導体部を設けた基板を第1の絶縁層で被覆す
る第1被覆工程と、 前記第1の絶縁層で被覆された基板を前記第1の絶縁層
より粗化されやすい材質の第2の絶縁層で被覆する第2
被覆工程と、 前記第1の絶縁層および前記第2の絶縁層を貫通する開
口部を形成して前記下層導体部を露出させる現像工程
と、 少なくとも前記第2の絶縁層を粗化することにより前記
第2の絶縁層の開口径を前記第1の絶縁層の開口径より
大きくして段差を形成する段差形成工程とを含むことを
特徴とするフォトビア形成方法。
1. A method of forming a photo via for electrically contacting an inner conductor section with the outside through an opening provided in an insulating layer, comprising: coating a substrate having an inner conductor section on its surface with a first insulating layer. 1 coating step, and 2nd coating the substrate coated with the first insulating layer with a second insulating layer of a material that is more easily roughened than the first insulating layer
A coating step, a developing step of forming an opening penetrating the first insulating layer and the second insulating layer to expose the lower conductor section, and at least roughening the second insulating layer. And a step forming step of forming a step by making an opening diameter of the second insulating layer larger than an opening diameter of the first insulating layer.
【請求項2】 請求項1に記載するフォトビア形成方法
において、 前記第1の絶縁層がシリカの粉末を含有し、 前記第2の絶縁層がエポキシの粉末を含有することを特
徴とするフォトビア形成方法。
2. The photovia forming method according to claim 1, wherein the first insulating layer contains silica powder, and the second insulating layer contains epoxy powder. Method.
JP13481196A 1996-05-29 1996-05-29 Photo via formation method Expired - Lifetime JP3816982B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13481196A JP3816982B2 (en) 1996-05-29 1996-05-29 Photo via formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13481196A JP3816982B2 (en) 1996-05-29 1996-05-29 Photo via formation method

Publications (2)

Publication Number Publication Date
JPH09321428A true JPH09321428A (en) 1997-12-12
JP3816982B2 JP3816982B2 (en) 2006-08-30

Family

ID=15137063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13481196A Expired - Lifetime JP3816982B2 (en) 1996-05-29 1996-05-29 Photo via formation method

Country Status (1)

Country Link
JP (1) JP3816982B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218490A (en) * 2002-01-24 2003-07-31 Sharp Corp Printed wiring board and its manufacturing method
KR20160079413A (en) * 2014-12-26 2016-07-06 삼성전기주식회사 Printed circuit board and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218490A (en) * 2002-01-24 2003-07-31 Sharp Corp Printed wiring board and its manufacturing method
KR20160079413A (en) * 2014-12-26 2016-07-06 삼성전기주식회사 Printed circuit board and method of manufacturing the same

Also Published As

Publication number Publication date
JP3816982B2 (en) 2006-08-30

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