JPH09321325A - Cds/cdte solar cell and manufacture thereof - Google Patents

Cds/cdte solar cell and manufacture thereof

Info

Publication number
JPH09321325A
JPH09321325A JP8132961A JP13296196A JPH09321325A JP H09321325 A JPH09321325 A JP H09321325A JP 8132961 A JP8132961 A JP 8132961A JP 13296196 A JP13296196 A JP 13296196A JP H09321325 A JPH09321325 A JP H09321325A
Authority
JP
Japan
Prior art keywords
cdte
film
cds
solar cell
forming material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8132961A
Other languages
Japanese (ja)
Inventor
Takashi Arita
孝 有田
Tetsuya Niimoto
哲也 新本
Akira Hanabusa
彰 花房
Mikio Murozono
幹夫 室園
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Battery Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Battery Industrial Co Ltd filed Critical Matsushita Battery Industrial Co Ltd
Priority to JP8132961A priority Critical patent/JPH09321325A/en
Priority to EP97922196A priority patent/EP0853345B1/en
Priority to PCT/JP1997/001791 priority patent/WO1997045880A1/en
Priority to DE69727655T priority patent/DE69727655T2/en
Priority to US09/000,089 priority patent/US5994642A/en
Publication of JPH09321325A publication Critical patent/JPH09321325A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials

Abstract

PROBLEM TO BE SOLVED: To provide a CdS/CdTe solar cell having a low cost and stable performance and a manufacturing method thereof. SOLUTION: The CdTe film forming material uses a film formed by printing a fine powder contg. Cd and Te on a heat resistive support 12; the powder is obtained by pulverizing Cd and Te or CdTe compd. It is heated into vapor to form a CdTe film on a CdS film, thus forming a CdS/CdTe solar cells. Thus it is possible to produce a CdS/CdTe solar cell at low cost with stable performance.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、CdS/CdTe
太陽電池およびその製造法に関するもので、特に、Cd
Te膜形成法として近接昇華法を用いた時のCdTe膜
形成用材料に関する。
TECHNICAL FIELD The present invention relates to a CdS / CdTe
The present invention relates to a solar cell and a method for manufacturing the same, and in particular to Cd.
The present invention relates to a CdTe film forming material when a proximity sublimation method is used as a Te film forming method.

【0002】[0002]

【従来の技術】近年、炭酸ガスによる地球温暖化、オゾ
ン層の破壊等、地球環境問題がクローズアップされる
中、新エネルギー開発、とりわけ太陽電池の早期実用化
に対する期待はますます大きくなってきている。しかし
ながら、太陽電池の早期実用化のためにはまだまだ解決
しなければならない課題が多々残っている。特に、太陽
電池の変換効率の向上と低コスト化は避けては通れない
重要な課題である。
2. Description of the Related Art In recent years, as global environmental problems such as global warming due to carbon dioxide and destruction of the ozone layer have been highlighted, expectations for new energy development, especially for early commercialization of solar cells, have been increasing. There is. However, many problems still remain to be solved for the early commercialization of solar cells. In particular, improvement of conversion efficiency and cost reduction of solar cells are important issues that cannot be avoided.

【0003】そのような中で、CdS/CdTe太陽電
池は、光吸収層として最適な禁制帯幅に近い1.4eV
のCdTeを用いており、高効率太陽電池の本命の一つ
として期待されている。
Under such circumstances, the CdS / CdTe solar cell has 1.4eV, which is close to the optimum forbidden band width as a light absorption layer.
CdTe is used and is expected as one of the favorite of high efficiency solar cells.

【0004】CdS/CdTe太陽電池の作製法には、
種々の方法が試みられているが、近接昇華法は高品質な
CdTe膜が形成でき、高効率な太陽電池が作製できる
手法として注目されている。近接昇華法についてはT.L.
Chuらにより「HIGH EFFICI-ENCY CdS/CdTe SOLAR CELL
S FROM SOLUTION-GROWN CdS FILMS 」:The Conference
Record of the 22nd IEEE Photovoltaic Specialists
Conference (1991) Vol.2, p952 などで技術開示されて
いるが、簡単に説明すると、CdTeを堆積させる基板
をCdTe膜形成用材料(以降ソースという)に対し
て、1〜2mm程度の間隙をあけて近接させ、減圧雰囲
気下で加熱することによってソースを昇華させ、基板上
にCdTe膜を形成する手法である。また、この文献の
中で、ソース材料としては、市販の5Nの純度のCdT
e多結晶、もしくは構成元素とドーパントを直接合成さ
せたCdTe多結晶と記述されている。
The method for producing a CdS / CdTe solar cell is as follows:
Although various methods have been tried, the proximity sublimation method is drawing attention as a method capable of forming a high-quality CdTe film and producing a highly efficient solar cell. TL for proximity sublimation
Chu et al., "HIGH EFFICI-ENCY CdS / CdTe SOLAR CELL
S FROM SOLUTION-GROWN CdS FILMS ": The Conference
Record of the 22nd IEEE Photovoltaic Specialists
Technically disclosed in Conference (1991) Vol.2, p952, etc., but in brief description, a substrate on which CdTe is deposited has a gap of about 1 to 2 mm with respect to a CdTe film forming material (hereinafter referred to as a source). It is a method of forming a CdTe film on a substrate by opening and bringing them close to each other and heating them under a reduced pressure atmosphere to sublime the source. Further, in this document, as a source material, commercially available CdT having a purity of 5N is used.
It is described as an e-polycrystal or a CdTe polycrystal obtained by directly synthesizing a constituent element and a dopant.

【0005】[0005]

【発明が解決しようとする課題】従来、近接昇華法にお
いては、ソースとしてCdTe粉末を皿状の容器に敷き
詰め使用するのが一般的な方法であった。しかしながら
CdTe粉末は材料が高価な上、数十回製膜した後、材
料が変質することによって残りの材料を廃棄しなくては
ならないため材料利用効率が低いという点で、太陽電池
の低コスト化を目指す上で問題があった。また、ソース
の交換時には真空製膜装置をベントして大気にさらさな
ければならず、手間がかかり、例えばこれを量産化する
場合は稼働率の低下を招くことになる。さらにソースが
経時変化を起こすことにより、太陽電池の性能にバラツ
キが生じるといった問題があった。
Conventionally, in the proximity sublimation method, it has been a general method to spread CdTe powder as a sauce in a dish-shaped container and use it. However, the cost of CdTe powder is low, and the material utilization efficiency is low because the rest of the material must be discarded because the material deteriorates after the film has been formed several tens of times. There was a problem in aiming for Further, when exchanging the source, the vacuum film forming apparatus has to be vented and exposed to the atmosphere, which is time-consuming and, for example, in the case of mass production of this, the operating rate is lowered. Furthermore, there is a problem that the performance of the solar cell varies due to the source changing with time.

【0006】本発明は上記問題点を解決するもので、安
価で安定したCdTe膜の形成が可能なCdTe膜形成
用材料を提供するものである。
The present invention solves the above problems and provides a material for forming a CdTe film which is inexpensive and can form a stable CdTe film.

【0007】[0007]

【課題を解決するための手段】本発明はこれらの課題を
解決するために、CdTe膜形成用材料として、耐熱性
を有する支持体上にCdとTeの単体もしくはCdTe
化合物を粉砕して得られた少なくともCd,Teを含む
微粉末を印刷した膜を使用し、それを加熱によって気化
させることによりCdS膜と接合界面を有するCdTe
膜を形成したCdS/CdTe太陽電池である。
In order to solve these problems, the present invention provides, as a material for forming a CdTe film, Cd and Te alone or CdTe on a support having heat resistance.
CdTe having a bonding interface with a CdS film by using a film printed with a fine powder containing at least Cd, Te obtained by pulverizing a compound and vaporizing it by heating
It is a CdS / CdTe solar cell which formed the film.

【0008】また、上記太陽電池の製造法として、耐熱
性を有する支持体上にCdとTeの単体もしくはCdT
e化合物を粉砕して得られた少なくともCd,Teを含
む微粉末を印刷しCdTe膜形成用材料とする工程、該
CdTe膜形成用材料と、透明導電膜、CdS膜を順次
形成された基板を近接して対向配置させる工程、該Cd
Te膜形成用材料を加熱により気化させ対配置したCd
S膜上にCdTeを堆積させる工程とを有するものであ
る。
As a method of manufacturing the above-mentioned solar cell, Cd and Te alone or CdT are provided on a heat-resistant support.
A step of printing a fine powder containing at least Cd and Te obtained by crushing the e compound to obtain a CdTe film forming material, a substrate on which the CdTe film forming material, a transparent conductive film and a CdS film are sequentially formed. Step of arranging closely and facing each other, the Cd
Cd in which a Te film forming material is vaporized by heating and arranged in pairs
And a step of depositing CdTe on the S film.

【0009】この手段によれば、低コストで安定した性
能のCdS/CdTe太陽電池の製造が可能となる。
By this means, it is possible to manufacture a CdS / CdTe solar cell with low cost and stable performance.

【0010】[0010]

【発明の実施の形態】本発明のCdS/CdTe太陽電
池は、透明導電膜、CdS膜が順次形成された基板に対
し、耐熱性を有する支持体上にCdとTeの単体もしく
はCdTe化合物を粉砕して得られた少なくともCd,
Teを含む微粉末を印刷した膜を、近接して対向配置さ
せ、それをCdTe膜形成用材料として気化させ、前記
CdS膜上にCdTeを堆積させてなるCdS/CdT
e太陽電池である。前記CdTe膜形成用材料として、
安価なCd,Teの単体を出発材料として利用した場合
には材料コストが安くなるというメリットがある。ま
た、1回の製膜に必要なソースの量を印刷することによ
って材料利用効率が向上する。また1回の製膜ごとにソ
ースを交換するため、ソースの経時変化による太陽電池
の性能バラツキが無くなり、安定した性能のCdS/C
dTe太陽電池の製造が可能となる。なお、前記耐熱性
を有する支持体としては板状の炭素材が均熱性と熱容量
が小さい点から優れているが、価格と取扱い安さの点で
はガラス基板を使用するのがよい。また、これらの支持
体はサイクル使用することも可能である。
BEST MODE FOR CARRYING OUT THE INVENTION A CdS / CdTe solar cell according to the present invention is a substrate on which a transparent conductive film and a CdS film are sequentially formed, and a Cd and Te simple substance or a CdTe compound is ground on a support having heat resistance. Obtained at least Cd,
CdS / CdT obtained by arranging films printed with fine powder containing Te in close proximity to each other, vaporizing the films as a material for forming a CdTe film, and depositing CdTe on the CdS film.
e It is a solar cell. As the material for forming the CdTe film,
The use of inexpensive Cd and Te simple substances as starting materials has the merit of reducing the material cost. Further, by printing the amount of the source required for one film formation, the material utilization efficiency is improved. In addition, since the source is exchanged for each film formation, there is no variation in the performance of the solar cell due to the aging of the source, and stable CdS / C performance is achieved.
It becomes possible to manufacture dTe solar cells. As the support having heat resistance, a plate-shaped carbon material is excellent because of its uniform heat distribution and small heat capacity, but it is preferable to use a glass substrate in terms of price and ease of handling. Also, these supports can be used cyclically.

【0011】[0011]

【実施例】本発明の一実施の形態とその製造法を図を用
いて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention and its manufacturing method will be described with reference to the drawings.

【0012】図1に本発明の実施例によるCdS/Cd
Te太陽電池の断面を示す。1はガラス基板、2はIT
O,SnO2等の透明導電膜で、膜厚は200〜500
μm、3はCdS膜で、膜厚は50〜150μm、4は
CdTe膜、5はCdTe膜に対する電極であるカーボ
ン膜、6はCdS膜に対する電極であるAgIn膜、7
は集電体であるAg膜である。図1の構成において、本
発明のポイントであるCdTe膜4の形成法についてさ
らに詳しく説明する。
FIG. 1 shows CdS / Cd according to an embodiment of the present invention.
3 shows a cross section of a Te solar cell. 1 is a glass substrate, 2 is IT
A transparent conductive film such as O or SnO2 having a film thickness of 200 to 500
μm, 3 is a CdS film, the film thickness is 50 to 150 μm, 4 is a CdTe film, 5 is a carbon film which is an electrode for the CdTe film, 6 is an AgIn film which is an electrode for the CdS film, 7
Is an Ag film which is a current collector. The method of forming the CdTe film 4 which is the feature of the present invention in the structure of FIG. 1 will be described in more detail.

【0013】まず、CdTe膜形成用材料の製造法であ
るが、出発材料としてCd粉末とTe粉末を用いる。こ
れらの価格はグラム当たり約20円で、CdTe粉末の
価格約250円と比較すると格段に安価である。このC
d粉末とTe粉末を等モル量ずつ加え、媒体撹拌ミルを
用いて水中で1μm以下程度の粒径になるまで粉砕し
た。その後、粉砕粉を取り出し、乾燥後この微粉末に、
プロピレングリコールを粘結剤として加えて混練し、ペ
ーストを作製した。このペーストを1mm厚のカーボン
プレート上に印刷し、120℃で1時間乾燥して粘結剤
を蒸発させ印刷膜を得た。印刷膜の組成をX線回折によ
って調べたところ、Cd単体、Te単体、CdTeの回
折ピークが観測された。このCdTeは粉砕時に粉砕エ
ネルギーによって合成されたものと考えられる。
First, in the method of manufacturing a material for forming a CdTe film, Cd powder and Te powder are used as starting materials. These prices are about 20 yen per gram, which is significantly lower than the price of CdTe powder of about 250 yen. This C
The d powder and the Te powder were added in equimolar amounts and pulverized in water using a medium stirring mill to a particle size of about 1 μm or less. After that, take out the crushed powder, and after drying, add this fine powder to
Propylene glycol was added as a binder and kneaded to prepare a paste. This paste was printed on a carbon plate having a thickness of 1 mm and dried at 120 ° C. for 1 hour to evaporate the binder to obtain a printed film. When the composition of the printed film was examined by X-ray diffraction, diffraction peaks of Cd simple substance, Te simple substance and CdTe were observed. It is considered that this CdTe was synthesized by crushing energy during crushing.

【0014】次に、この印刷膜/カーボンプレートをガ
ラス/ITO/CdS基板との間隙が2mmになるよう
に対向させ、図2に示すように、石英管8内にセットし
近接昇華法によってCdTe膜を製膜する。ガラス/I
TO/CdSの基板9の上には均熱体として厚さ1mm
のカーボンプレート10を載せる。製膜手順は、まず、
石英管8内をロータリーポンプ11で真空に引き、次に
アルゴンガスを導入して1〜5Torrに保つ。ガラス
/ITO/CdS基板9および印刷膜/カーボンプレー
トのソース12をそれぞれ上下のランプヒータ13で、
ソース12の温度600〜630℃、基板9の温度58
0〜600℃まで加熱し1分間保持する。この間にCd
S膜上にCdTe膜が形成される。冷却後、カーボンプ
レート上のCdTe焼結膜はほとんど無くなっており、
CdS膜上に形成されたCdTe膜の厚みは6μmであ
った。
Next, the printed film / carbon plate is opposed to the glass / ITO / CdS substrate so as to have a gap of 2 mm, and is set in a quartz tube 8 as shown in FIG. Form the membrane. Glass / I
On the TO / CdS substrate 9, a thickness of 1 mm as a soaking body
Place the carbon plate 10 of. The film forming procedure is as follows.
The inside of the quartz tube 8 is evacuated by the rotary pump 11, and then argon gas is introduced to keep the pressure at 1 to 5 Torr. The glass / ITO / CdS substrate 9 and the printed film / carbon plate source 12 are respectively provided with upper and lower lamp heaters 13.
The temperature of the source 12 is 600 to 630 ° C., the temperature of the substrate 9 is 58.
Heat to 0-600 ° C and hold for 1 minute. During this time Cd
A CdTe film is formed on the S film. After cooling, the CdTe sintered film on the carbon plate is almost gone,
The thickness of the CdTe film formed on the CdS film was 6 μm.

【0015】CdTe膜形成後、CdTe膜上にCdC
2のメタノール飽和液をコートし、メタノールを蒸発
させた後、400℃、30分間熱処理してCdTeをグ
レイン成長させ膜の結晶性を向上させた。その後、Cd
Teの電極としてカーボン膜、CdSの電極としてAg
In膜を形成し、太陽電池を作製した。得られた太陽電
池の特性をAM1.5,100mW/cm2のソーラー
シミュレータ下で測定たところ、短絡電流23.5mA
/cm2、開放電圧0.813V、曲線因子0.69
6、変換効率13.3%で、従来のCdTe粉末皿状の
容器に敷き詰めてソースとして作製した太陽電池の特性
(短絡電流23.4mA/cm2、開放電圧0.815
V、曲線因子0.701、変換効率13.4%)とほぼ
同程度の性能が得られた。
After forming the CdTe film, CdC is formed on the CdTe film.
coating a methanol saturated solution of l 2, after evaporation of the methanol, 400 ° C., and the CdTe and heat-treated for 30 minutes to improve the crystallinity of the film is grain growth. Then Cd
Carbon film as Te electrode, Ag as CdS electrode
An In film was formed and a solar cell was produced. When the characteristics of the obtained solar cell were measured under a solar simulator of AM 1.5, 100 mW / cm 2 , a short circuit current was 23.5 mA.
/ Cm 2 , open circuit voltage 0.813V, fill factor 0.69
6. Characteristics of a solar cell with a conversion efficiency of 13.3% and a CdTe powder dish-shaped container laid as a source (short-circuit current 23.4 mA / cm 2 , open-circuit voltage 0.815).
V, fill factor 0.701, conversion efficiency 13.4%), and similar performances were obtained.

【0016】次に第2の実施例について述べる。まず、
CdTe膜形成用材料の製造法であるが、上述した粉砕
粉に、プロピレングリコールを粘結剤として加えて混練
する際に、融点降下剤としてCdCl2を適量加えてペ
ーストを作製した。このペーストを1mm厚のカーボン
プレート上に印刷し、120℃で1時間乾燥して、粘結
剤を蒸発させ、印刷膜を得た。印刷膜の組成をX線回折
によって調べたところ、Cd単体、Te単体、CdTe
の回折ピーク以外にCdCl2のピークも当然観測され
た。印刷膜形成後、窒素雰囲気中600℃〜700℃の
温度で1時間焼成し、CdTe焼結膜を得た。このCd
Te焼結膜からはCdTeのX線回折ピークしか観測さ
れなかった。次に、このCdTe焼結膜/カーボンプレ
ートをガラス/ITO/CdS基板との間隙が2mmに
なるように対向させ、第1の実施例で用いた装置にセッ
トし、第1の実施例と同じ手順でCdS膜上にCdTe
膜を形成した。CdTe膜形成後、CdTe膜上にCd
Cl2のメタノール飽和液をコートし、メタノールを蒸
発させた後、400℃、30分間熱処理してCdTeを
グレイン成長させ膜の結晶性を向上させた。その後、C
dTeの電極としてカーボン膜、CdSの電極としてA
gIn膜を形成し、太陽電池を作製した。得られた太陽
電池の特性をAM1.5,100mW/cm2のソーラ
ーシミュレータ下で測定したところ、短絡電流23.6
mA/cm2、開放電圧0.816V、曲線因子0.6
99、変換効率13.5%で、従来のCdTe粉末皿状
の容器に敷き詰めてソースとして作製した太陽電池の特
性(短絡電流23.4mA/cm2、開放電圧0.81
5V、曲線因子0.701、変換効率13.4%)と同
程度の性能が得られた。
Next, a second embodiment will be described. First,
This is a method for producing a material for forming a CdTe film, and when propylene glycol was added as a binder to the pulverized powder described above and kneaded, an appropriate amount of CdCl 2 was added as a melting point depressant to prepare a paste. This paste was printed on a 1 mm thick carbon plate and dried at 120 ° C. for 1 hour to evaporate the binder to obtain a printed film. When the composition of the printed film was examined by X-ray diffraction, Cd simple substance, Te simple substance, CdTe
In addition to the diffraction peak of CdCl 2, a peak of CdCl 2 was naturally observed. After the printed film was formed, it was baked in a nitrogen atmosphere at a temperature of 600 ° C. to 700 ° C. for 1 hour to obtain a CdTe sintered film. This Cd
Only the X-ray diffraction peak of CdTe was observed from the Te sintered film. Next, the CdTe sintered film / carbon plate is opposed to the glass / ITO / CdS substrate so as to have a gap of 2 mm, set in the apparatus used in the first embodiment, and the same procedure as in the first embodiment. With CdTe on CdS film
A film was formed. After forming the CdTe film, CdTe is formed on the CdTe film.
After coating a saturated solution of Cl 2 in methanol and evaporating the methanol, heat treatment was carried out at 400 ° C. for 30 minutes to cause grain growth of CdTe to improve the crystallinity of the film. Then, C
Carbon film as dTe electrode, A as CdS electrode
A gIn film was formed and a solar cell was produced. The characteristics of the obtained solar cell were measured under a solar simulator of AM 1.5, 100 mW / cm 2 to find that a short circuit current was 23.6.
mA / cm 2 , open-circuit voltage 0.816V, fill factor 0.6
99, conversion efficiency 13.5%, characteristics of a solar cell prepared as a source by laying it in a conventional CdTe powder dish-shaped container (short circuit current 23.4 mA / cm 2 , open circuit voltage 0.81
5V, fill factor 0.701, conversion efficiency 13.4%) and similar performance was obtained.

【0017】なお上記実施例では出発材料としてCd,
Teの単体を使用したが、市販のCdTe化合物を使用
しても同様の結果が得られた。
In the above embodiment, Cd as the starting material,
Although Te alone was used, similar results were obtained using a commercially available CdTe compound.

【0018】以上のように、CdTe膜形成用材料とし
ては、CdとTeの単体もしくはCdTe化合物を粉砕
して得られた微粉末を印刷、乾燥した膜、およびそれを
焼結した膜のいずれでも使用できることがわかった。
As described above, as the material for forming the CdTe film, any of a simple substance of Cd and Te or a fine powder obtained by crushing a CdTe compound, which is printed and dried, or a film obtained by sintering the fine powder is used. I found it usable.

【0019】次に、CdTe製膜回数と太陽電池特性の
相関について、ソースとしてCdTe粉末を皿状の容器
に敷き詰めて交換しない場合(従来例)と、微粉末を印
刷した膜をCdTe製膜ごとに交換して使用した場合
(本発明)の比較実験を行った。
Next, regarding the correlation between the number of CdTe film formations and solar cell characteristics, when CdTe powder was spread as a source in a dish-like container and not replaced (conventional example), a film on which fine powder was printed was prepared for each CdTe film formation. A comparative experiment was carried out when the present invention was used after being replaced with the present invention.

【0020】図3は、太陽電池を50回試作した時の変
換効率の変化を示したものである。ソースとしてCdT
e粉末を皿状の容器に敷き詰めた場合は、20回製膜後
から太陽電池の変換効率の低下が見られるが、印刷膜を
製膜ごとに交換した場合は変換効率の低下はなく、再現
性よく良好な結果が得られることがわかった。
FIG. 3 shows a change in conversion efficiency when a solar cell was prototyped 50 times. CdT as the source
e When the powder was spread in a dish-shaped container, the conversion efficiency of the solar cell decreased after 20 times of film formation, but when the printed film was replaced for each film, the conversion efficiency did not decrease. It was found that good results were obtained with good performance.

【0021】なお、本実施例では、CdTe焼結膜を形
成する基板としてカーボンプレートを使用したが、ガラ
ス基板でもよく、その場合はガラス基板の下にカーボン
プレートを一枚敷くことにより、同等の効果が得られ
る。
In this embodiment, the carbon plate is used as the substrate for forming the CdTe sintered film, but a glass substrate may be used. In that case, the same effect can be obtained by laying one carbon plate under the glass substrate. Is obtained.

【0022】[0022]

【発明の効果】以上のように本発明によれば、低コスト
で安定した性能のCdS/CdTe太陽電池の製造が可
能となる。
As described above, according to the present invention, it is possible to manufacture a CdS / CdTe solar cell with low cost and stable performance.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のCdS/CdTe太陽電池の断面図FIG. 1 is a sectional view of a CdS / CdTe solar cell of the present invention.

【図2】本発明で使用した近接昇華法によるCdTe膜
形成装置の概略図
FIG. 2 is a schematic view of a CdTe film forming apparatus by the proximity sublimation method used in the present invention.

【図3】本発明と従来例によるCdTe製膜回数に対す
る変換効率の変化を示す図
FIG. 3 is a diagram showing changes in conversion efficiency with respect to the number of times CdTe film formation according to the present invention and a conventional example

【符号の説明】[Explanation of symbols]

1 ガラス基板 2 透明導電膜 3 CdS膜 4 CdTe膜 5 カーボン膜 6 AgIn電極 7 Ag膜 8 石英管 9 ガラス/ITO/CdS基板 10 カーボンプレート 11 ロータリーポンプ 12 印刷膜/カーボンプレート 13 ランプヒータ 1 Glass Substrate 2 Transparent Conductive Film 3 CdS Film 4 CdTe Film 5 Carbon Film 6 AgIn Electrode 7 Ag Film 8 Quartz Tube 9 Glass / ITO / CdS Substrate 10 Carbon Plate 11 Rotary Pump 12 Printing Film / Carbon Plate 13 Lamp Heater

───────────────────────────────────────────────────── フロントページの続き (72)発明者 室園 幹夫 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Mikio Murozono 1006 Kazuma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 透明導電膜、CdS膜が順次形成された
基板に、近接して対向配置されたCdTe膜形成用材料
を気化せしめ、前記CdS膜上にCdTeを堆積させて
なるCdS/CdTe太陽電池において、前記CdTe
膜形成用材料が、耐熱性を有する支持体上にCdとTe
の単体もしくはCdTe化合物を粉砕して得られた少な
くともCd,Teを含む微粉末を印刷した膜であって、
該膜を加熱によって気化させることにより前記CdS膜
と接合界面を有するCdTe膜を形成したCdS/Cd
Te太陽電池。
1. A CdS / CdTe solar system comprising a substrate on which a transparent conductive film and a CdS film are sequentially formed, a CdTe film forming material which is arranged in close proximity to and vaporized, and CdTe is deposited on the CdS film. In a battery, the CdTe
The film-forming material consists of Cd and Te on a heat-resistant support.
Which is a film obtained by printing a fine powder containing at least Cd, Te obtained by pulverizing a simple substance of CdTe compound or
CdS / Cd in which a CdTe film having a junction interface with the CdS film is formed by vaporizing the film by heating.
Te solar cell.
【請求項2】 CdTe膜形成用材料が、耐熱性を有す
る支持体上にCdとTeの単体もしくはCdTe化合物
を粉砕して得られた少なくともCd,Teを含む微粉末
を印刷した後、焼結して得られたCdTe膜である請求
項1記載のCdS/CdTe太陽電池。
2. A CdTe film-forming material, which is obtained by printing a fine powder containing at least Cd and Te obtained by crushing a simple substance of Cd and Te or a CdTe compound on a support having heat resistance, and then sintering. The CdS / CdTe solar cell according to claim 1, which is a CdTe film obtained by the above.
【請求項3】 耐熱性を有する支持体が板状の炭素材、
またはガラス基板である請求項1記載のCdS/CdT
e太陽電池。
3. A plate-like carbon material having a heat-resistant support,
Alternatively, the glass substrate is a CdS / CdT according to claim 1.
e solar cells.
【請求項4】 耐熱性を有する支持体上にCdとTeの
単体もしくはCdTe化合物を粉砕して得られた少なく
ともCd,Teを含む微粉末を印刷しCdTe膜形成用
材料とする工程、該CdTe膜形成用材料と、透明導電
膜、CdS膜を順次形成された基板を近接して対向配置
させる工程、該CdTe膜形成用材料を加熱により気化
させ対向配置したCdS膜上にCdTeを堆積させる工
程とを有するCdS/CdTe太陽電池の製造法。
4. A step of printing a fine powder containing at least Cd and Te obtained by pulverizing a simple substance of Cd and Te or a CdTe compound on a support having heat resistance to obtain a CdTe film forming material, the CdTe film forming material. A step of arranging a film forming material, a transparent conductive film, and a substrate on which a CdS film is sequentially formed in close proximity to each other, and a step of vaporizing the CdTe film forming material by heating to deposit CdTe on the CdS film that is opposed A method of manufacturing a CdS / CdTe solar cell having:
【請求項5】 CdTe膜形成用材料が、耐熱性を有す
る支持体上にCdとTeの単体もしくはCdTe化合物
を粉砕して得られた少なくともCd,Teを含む微粉末
を印刷した後、焼結する工程を有する請求項4記載のC
dS/CdTe太陽電池の製造法。
5. A CdTe film-forming material, which is obtained by printing fine powder containing at least Cd and Te obtained by crushing a simple substance of Cd and Te or a CdTe compound on a support having heat resistance, and then sintering. The method according to claim 4, further comprising the step of:
Method for manufacturing dS / CdTe solar cell.
【請求項6】 耐熱性を有する支持体が板状の炭素材、
またはガラス基板である請求項4記載のCdS/CdT
e太陽電池の製造法。
6. A heat-resistant support having a plate-like carbon material,
Alternatively, the glass substrate is a CdS / CdT according to claim 4.
e Manufacturing method of solar cell.
JP8132961A 1996-05-28 1996-05-28 Cds/cdte solar cell and manufacture thereof Pending JPH09321325A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP8132961A JPH09321325A (en) 1996-05-28 1996-05-28 Cds/cdte solar cell and manufacture thereof
EP97922196A EP0853345B1 (en) 1996-05-28 1997-05-27 METHOD FOR FORMING CdTe FILM
PCT/JP1997/001791 WO1997045880A1 (en) 1996-05-28 1997-05-27 METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM
DE69727655T DE69727655T2 (en) 1996-05-28 1997-05-27 METHOD FOR PRODUCING A CDTE LAYER
US09/000,089 US5994642A (en) 1996-05-28 1997-05-27 Method for preparing CdTe film and solar cell using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8132961A JPH09321325A (en) 1996-05-28 1996-05-28 Cds/cdte solar cell and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH09321325A true JPH09321325A (en) 1997-12-12

Family

ID=15093555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8132961A Pending JPH09321325A (en) 1996-05-28 1996-05-28 Cds/cdte solar cell and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH09321325A (en)

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