JPH09326499A - Production of cdte solar cell - Google Patents
Production of cdte solar cellInfo
- Publication number
- JPH09326499A JPH09326499A JP8142853A JP14285396A JPH09326499A JP H09326499 A JPH09326499 A JP H09326499A JP 8142853 A JP8142853 A JP 8142853A JP 14285396 A JP14285396 A JP 14285396A JP H09326499 A JPH09326499 A JP H09326499A
- Authority
- JP
- Japan
- Prior art keywords
- cdte
- gas
- film
- type
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、スパッタリング法
によるＣｄＴｅ太陽電池の製造法に関する。TECHNICAL FIELD The present invention relates to a method for manufacturing a CdTe solar cell by a sputtering method.
【０００２】[0002]
【従来の技術】近年、無限とも言える太陽エネルギーか
ら直接電気エネルギーを取り出すことができる太陽電池
が、エネルギー供給手段として注目されている。特に、
ＣｄＴｅ太陽電池は、他の太陽電池に比べて可視光から
近赤外光まで幅広い領域で高い感度を有しており、変換
効率の高い太陽電池として実用に供されている。2. Description of the Related Art In recent years, a solar cell which can directly extract electrical energy from infinite solar energy has been attracting attention as an energy supply means. Especially,
The CdTe solar cell has high sensitivity in a wide range from visible light to near infrared light as compared with other solar cells, and is put to practical use as a solar cell having high conversion efficiency.
【０００３】ＣｄＴｅ太陽電池の現在の製造法は、まず
粒径数μｍのＣｄＳ粉末に適量のＣｄＣｌ2を加えてプ
ロピレングリコールを溶剤としたぺーストをガラス基板
上にスクリーン印刷し、所定容器に収納後７００℃程度
に保持して焼結することによって、窓材としてバンドギ
ャップＥｇの広いＣｄＳ層（Ｅｇ＝２．４２ｅＶ）を形
成する。続いて粒形１μｍ以下のＣｄＴｅ粉末に適量の
ＣｄＣｌ2を加えてプロピレングリコールを溶剤とした
ぺーストを作製し、ＣｄＳ膜上にスクリーン印刷し、Ｃ
ｄＳ膜同様、所定容器内で６００℃程度に保持してＣｄ
Ｔｅ層を形成する。次に、ＣｄＴｅ層上にＣｕを適度に
添加したカーボンペーストをスクリーン印刷し４００℃
で焼結し、 ＣｄＴｅ側電極を形成する。最後に適量の
Ｉｎを添加したＡｇペーストをＣｄＳ層側に印刷し１５
０℃で焼結し、ＣｄＳ側電極を形成することで太陽電池
セルが完成する。The current manufacturing method for CdTe solar cells is as follows. First, an appropriate amount of CdCl 2 is added to CdS powder having a particle size of several μm, and a paste using propylene glycol as a solvent is screen-printed on a glass substrate and stored in a predetermined container. Then, the temperature is maintained at about 700 ° C. and sintered to form a CdS layer (Eg = 2.42 eV) having a wide band gap Eg as a window material. Subsequently, an appropriate amount of CdCl 2 was added to CdTe powder having a particle shape of 1 μm or less to prepare a paste using propylene glycol as a solvent, and screen-printed on the CdS film.
Like the dS film, hold Cd in a predetermined container at about 600 ° C
A Te layer is formed. Next, a carbon paste to which Cu is appropriately added is screen-printed on the CdTe layer at 400 ° C.
And sintered to form a CdTe side electrode. Finally, print an Ag paste to which an appropriate amount of In has been added on the CdS layer side.
A solar cell is completed by sintering at 0 ° C. and forming a CdS side electrode.
【０００４】[0004]
【発明が解決しようとする課題】上記のようにＣｄＳ、
ＣｄＴｅ層形成工程の温度保持は６００〜７００℃の
温度範囲で行われるため、ガラス基板には、硼ケイ酸系
の耐熱ガラスが用いられる。また、従来のＣｄＴｅ太陽
電池製造プロセスは工程数が多く、加熱冷却を繰り返す
必要があり、かつ高価な耐熱性を有するガラス基板を使
用することからコスト低減化が困難となっている。As described above, CdS,
Since the temperature is maintained in the temperature range of 600 to 700 ° C. in the CdTe layer forming step, borosilicate heat resistant glass is used for the glass substrate. Further, in the conventional CdTe solar cell manufacturing process, the number of steps is large, it is necessary to repeat heating and cooling, and cost reduction is difficult because an expensive glass substrate having heat resistance is used.
【０００５】本発明は、上記問題点を解決し、製造コス
トの安価なＣｄＴｅ太陽電池の製造方法を提供するもの
である。The present invention solves the above-mentioned problems and provides a method for manufacturing a CdTe solar cell which is inexpensive to manufacture.
【０００６】[0006]
【課題を解決するための手段】本発明はＣｄＴｅ太陽電
池をスパッタリング法で作製する方法を提供するもの
で、それは以下のような手順で作製される。The present invention provides a method for producing a CdTe solar cell by a sputtering method, which is produced by the following procedure.
【０００７】まず、雰囲気ガスをＡｒとＮ2の混合ガス
として、Ｃｄ過剰のＣｄＴｅターゲットを用いて、窓材
となるｎ型ＣｄＴｅ膜を透明ガラス基板上に成膜する。
その際、上記混合ガスは｛Ｎ2ガスの体積／（Ａｒガス
の体積＋Ｎ2ガスの体積）｝で定義される混合比を０．
１〜０．８の範囲内とし、混合ガスの圧力は２×１０-4
Ｔｏｒｒ以上、１×１０-3Ｔｏｒｒ以下とする。続いて
ターゲットをＴｅ過剰のＣｄＴｅターゲットに交換し、
Ａｒガスのみでｎ型ＣｄＴｅ膜上にｐ型ＣｄＴｅ膜を成
膜する。そして、最後にｎ型ＣｄＴｅ膜とｐ型ＣｄＴｅ
膜とにオーミック電極を形成することで太陽電池が完成
する。First, an n-type CdTe film to be a window material is formed on a transparent glass substrate by using an atmosphere gas as a mixed gas of Ar and N 2 and using a Cd-excessive CdTe target.
At this time, the mixed gas has a mixing ratio defined by {volume of N 2 gas / (volume of Ar gas + volume of N 2 gas)} of 0.
Within the range of 1 to 0.8, the pressure of the mixed gas is 2 × 10 -4
Torr or more and 1 × 10 −3 Torr or less. Then replace the target with a Te-rich CdTe target,
A p-type CdTe film is formed on the n-type CdTe film using only Ar gas. And finally, the n-type CdTe film and the p-type CdTe film
A solar cell is completed by forming an ohmic electrode on the film.
【０００８】理由は定かでないが、スパッタリングの際
に雰囲気ガスとしてＡｒとＮ2の混合ガスを用いること
で、通常黒銀色であるＣｄＴｅの色調が、混合比によっ
て透明に変化するのである。そのため、ｎ型ＣｄＴｅ膜
がｐ型ＣｄＴｅ膜に対する窓材として使用できるのであ
る。その際、通常１．４４ｅＶであるＣｄＴｅのバンド
ギャップは、混合比を０．１〜０．８の範囲で変化させ
ることにより、２．５〜３．５ｅＶの範囲で変化する。The reason is not clear, but by using a mixed gas of Ar and N 2 as an atmospheric gas during sputtering, the color tone of CdTe, which is usually black silver, changes transparently depending on the mixing ratio. Therefore, the n-type CdTe film can be used as a window material for the p-type CdTe film. At that time, the band gap of CdTe, which is usually 1.44 eV, changes in the range of 2.5 to 3.5 eV by changing the mixing ratio in the range of 0.1 to 0.8.
【０００９】この現象は、真空装置内に導入する混合ガ
スの圧力を、２×１０-4Ｔｏｒｒ以上とすることで顕著
となる。ただし、該混合ガスの圧力が１×１０-3Ｔｏｒ
ｒを越えてしまうとグロー放電が安定せず、ｎ型ＣｄＴ
ｅ膜の成膜が安定しない。This phenomenon becomes remarkable when the pressure of the mixed gas introduced into the vacuum device is set to 2 × 10 -4 Torr or more. However, the pressure of the mixed gas is 1 × 10 −3 Tor.
If it exceeds r, the glow discharge will not be stable and the n-type CdT
The film formation of the e film is not stable.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施の形態につい
て説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.
【００１１】まず、本発明のＣｄＴｅ太陽電池の製造に
用いる装置について説明する。図１は、イオンビームス
パッタリング装置の該略図である。真空容器１には該容
器１内を所定の真空度とするための真空ポンプ２、Ａｒ
ガス導入管３及びＮ2ガス導入管４が連結されている。
また、該容器１内には被コーティング材であるガラス基
板５を保持するための基板ホルダー６と、イオン源７か
らのイオンビームの照射によりスパッタリングされる各
種ターゲットを保持するためのターゲットホルダー８が
設置されている。First, an apparatus used for manufacturing the CdTe solar cell of the present invention will be described. FIG. 1 is a schematic diagram of an ion beam sputtering apparatus. The vacuum container 1 includes a vacuum pump 2 and an Ar pump for maintaining a predetermined degree of vacuum in the container 1.
The gas introduction pipe 3 and the N 2 gas introduction pipe 4 are connected.
A substrate holder 6 for holding a glass substrate 5 as a material to be coated and a target holder 8 for holding various targets to be sputtered by irradiation of an ion beam from an ion source 7 are provided in the container 1. is set up.
【００１２】ターゲットホルダー８は四角柱からなり、
ターゲット取付け面である四角柱の四つの側面に異なる
ターゲットが設置可能で、９０度毎回転させることでタ
ーゲットの選択ができる。本実施の形態では四つのター
ゲット取付け面を全て使用し、ｎ型ＣｄＴｅ膜用にＣｄ
過剰ＣｄＴｅターゲット９、ｐ型ＣｄＴｅ膜用にＴｅ過
剰ＣｄＴｅターゲット１０、ｐ型ＣｄＴｅ膜用の電極の
下地としてＣｕ含有Ｃターゲット１１、及び電極材料と
してＩｎ含有Ａｇターゲット１２を設置した。該ターゲ
ット９、１０、１１、１２は、いずれも５〜６Ｎ程度に
高純度化されたものであるが、スパッタリングに際して
はターゲット表面を上記イオン源７からのＡｒイオンビ
ーム照射によりクリーニングするのがよい。The target holder 8 is a square pole,
Different targets can be installed on the four side surfaces of the square pole that is the target mounting surface, and the target can be selected by rotating every 90 degrees. In this embodiment, all four target mounting surfaces are used, and Cd for the n-type CdTe film is used.
An excess CdTe target 9, a Te excess CdTe target 10 for the p-type CdTe film, a Cu-containing C target 11 as a base of an electrode for the p-type CdTe film, and an In-containing Ag target 12 as an electrode material were set. The targets 9, 10, 11 and 12 are all highly purified to about 5 to 6 N, but during sputtering, the target surface should be cleaned by irradiation with Ar ion beam from the ion source 7. .
【００１３】基板ホルダー６の全面には、窓部を有した
ステンレス製のマスク１３が設置されている。該マスク
１３は、外部操作により微動送りできる機構を有してお
り、ガラス基板５上にマスク１３の窓部に対応した部分
のみに成膜できるように構成されている。A stainless mask 13 having a window is installed on the entire surface of the substrate holder 6. The mask 13 has a mechanism that can be finely moved by an external operation, and is configured so that a film can be formed on the glass substrate 5 only on a portion corresponding to the window of the mask 13.
【００１４】次に、太陽電池の製造について説明する。
まず、ターゲットにＣｄ過剰ＣｄＴｅターゲット９を用
いて、ｎ型ＣｄＴｅ膜を成膜する。このとき、雰囲気ガ
スに混合比が０．１〜０．８の範囲にあるＡｒとＮ2の
混合ガスを用い、混合ガスの圧力を２×１０-4Ｔｏｒｒ
以上、１×１０-3Ｔｏｒｒ以下とすることで、ｎ型Ｃｄ
Ｔｅ膜は、ＣｄＴｅ本来の黒銀色ではなく透明となる。Next, the production of the solar cell will be described.
First, using the Cd-excessive CdTe target 9 as a target, an n-type CdTe film is formed. At this time, a mixed gas of Ar and N 2 having a mixing ratio in the range of 0.1 to 0.8 was used as the atmospheric gas, and the pressure of the mixed gas was 2 × 10 −4 Torr.
As described above, the n-type Cd is set to 1 × 10 −3 Torr or less.
The Te film becomes transparent instead of the original black silver color of CdTe.
【００１５】次に、マスク１３の位置を若干移動させ、
Ａｒガス雰囲気でＴｅ過剰ＣｄＴｅターゲット１０を用
いて、ｎ型ＣｄＴｅ膜上にｐ型ＣｄＴｅ膜を成膜する。
続いて、マスク１３の位置を更に移動させ、ｐ型ＣｄＴ
ｅ膜用電極の下地として、Ｃｕ含有Ｃ電極をｐ型ＣｄＴ
ｅ膜上に形成する。Ｃｕ添加ＣｄＴｅ結晶は低抵抗のｐ
型となるため、Ｃｕ含有Ｃ電極を設けることで、ｐ型Ｃ
ｄＴｅ膜に対する電極のオーミック特性が改善されるの
である。最後に、マスク１３の位置を更に移動させて、
ｎ型ＣｄＴｅ膜とｐ型ＣｄＴｅ膜にＩｎ含有Ａｇ電極を
形成することで、図２に示すような構造の太陽電池が完
成する。Next, the position of the mask 13 is slightly moved,
A p-type CdTe film is formed on the n-type CdTe film by using the Te-excessive CdTe target 10 in an Ar gas atmosphere.
Then, the position of the mask 13 is further moved to p-type CdT.
A Cu-containing C electrode is used as a base of the e-film electrode to form a p-type CdT
e formed on the film. Cu-added CdTe crystal has a low resistance p
P-type C by providing a Cu-containing C electrode
The ohmic characteristics of the electrode with respect to the dTe film are improved. Finally, move the position of the mask 13 further,
By forming an In-containing Ag electrode on the n-type CdTe film and the p-type CdTe film, a solar cell having a structure as shown in FIG. 2 is completed.
【００１６】上記ＣｄＴｅ太陽電池は、イオンビームス
パッタリング装置の他、直流二極、高周波、マグネトロ
ン等のスパッタリング装置で製造することができる。The CdTe solar cell can be manufactured by a sputtering device such as a DC bipolar, high frequency, or magnetron in addition to the ion beam sputtering device.
【００１７】[0017]
【実施例】以下、実施例について図１及び図２を用いて
説明する。EXAMPLES Examples will be described below with reference to FIGS. 1 and 2.
【００１８】一辺２０ｃｍ、厚さ３ｍｍの透明ガラス基
板５をアセトンを用いて超音波洗浄した後、前記ガラス
基板を基板ホルダー６に設置し、真空ポンプ２を作動さ
せて真空容器１内を１×１０-6Ｔｏｒｒまで排気した。After ultrasonically cleaning a transparent glass substrate 5 having a side of 20 cm and a thickness of 3 mm with acetone, the glass substrate is placed on the substrate holder 6 and the vacuum pump 2 is operated to make the inside of the vacuum container 1 1 ×. It was evacuated to 10 -6 Torr.
【００１９】次に、真空容器１内にＡｒガス導入管３と
Ｎ2ガス導入管４からＡｒとＮ2を導入し、混合ガスの圧
力を２×１０-4Ｔｏｒｒとした後、イオン源７から加速
電圧３ｋＶ、電流密度１１ｍＡ／ｃｍ2のＡｒ＋Ｎ2混合
イオンビームをＣｄ過剰ＣｄＴｅターゲット９上に照射
して、膜厚３μｍのｎ型ＣｄＴｅ膜１５を成膜した（図
２参照）。Next, Ar and N 2 are introduced into the vacuum vessel 1 through the Ar gas introduction pipe 3 and the N 2 gas introduction pipe 4 to adjust the pressure of the mixed gas to 2 × 10 -4 Torr, and then the ion source 7 is used. Then, an Ar + N 2 mixed ion beam having an accelerating voltage of 3 kV and a current density of 11 mA / cm 2 was irradiated onto the Cd-excessive CdTe target 9 to form an n-type CdTe film 15 having a film thickness of 3 μm (see FIG. 2).
【００２０】このとき、Ａｒガスの流量を毎分８ｓｃｃ
ｍ（「ｓｃｃｍ」とは、Stadard cubic centimeterの略
で、２５℃、１気圧の標準状態における１ｃｍ3のガス
の体積を表す）、Ｎ2ガスの流量を毎分２ｓｃｃｍとし
たところ、バンドギャップが２．７ｅＶの透明ｎ型Ｃｄ
Ｔｅ膜が得られた。なお、成膜時の基板温度は最高で６
５℃であった。At this time, the flow rate of Ar gas is 8 sccm / min.
m (“sccm” is an abbreviation for Stadard cubic centimeter, and represents the volume of gas of 1 cm 3 under standard conditions of 25 ° C. and 1 atmosphere), and the flow rate of N 2 gas was 2 sccm / min. 2.7 eV transparent n-type Cd
A Te film was obtained. The maximum substrate temperature during film formation is 6
5 ° C.
【００２１】続いて、Ｎ2ガス導入管４を閉じ、Ａｒガ
スの流量を毎分１０ｓｃｃｍとし、マスク１３を外部操
作により１ｍｍ移動させた後、イオン源７から加速電圧
３ｋＶ、電流密度１１ｍＡ／ｃｍ2のＡｒイオンビーム
をＴｅ過剰ＣｄＴｅターゲット１０上に照射して、透明
ｎ型ＣｄＴｅ膜１５上に膜厚３μｍのｐ型ＣｄＴｅ膜１
６を設けた（図２参照）。Subsequently, the N 2 gas introduction tube 4 was closed, the flow rate of Ar gas was set to 10 sccm / min, and the mask 13 was moved by 1 mm by an external operation. Then, the acceleration voltage was 3 kV from the ion source 7 and the current density was 11 mA / cm. The Ar-excessive CdTe target 10 is irradiated with an Ar ion beam of 2 to form a p-type CdTe film 1 having a film thickness of 3 μm on the transparent n-type CdTe film 15.
6 was provided (see FIG. 2).
【００２２】さらにマスク１３を１ｍｍ移動させた後、
ターゲットをＣｕ含有Ｃターゲット１１に換え、ｐ型Ｃ
ｄＴｅ膜の成膜条件と同条件で、ｐ型ＣｄＴｅ層１６上
に膜厚２μｍのＣｕ含有Ｃ電極１７を設け（図２参
照）、最後に、マスク１３を再度１ｍｍ移動させ、ター
ゲットをＩｎ含有Ａｇターゲット１２とし、ｐ型ＣｄＴ
ｅ膜の成膜条件と同条件で、ｎ型ＣｄＴｅ膜１５上およ
びＣｕ含有Ｃ電極１７上に膜厚２μｍのＩｎ含有Ａｇ電
極１８を設けた（図２参照）。After further moving the mask 13 by 1 mm,
The target is changed to the Cu-containing C target 11, and p-type C
A Cu-containing C electrode 17 having a film thickness of 2 μm is provided on the p-type CdTe layer 16 under the same conditions as the dTe film formation (see FIG. 2), and finally, the mask 13 is moved again by 1 mm to make the target contain In. Ag target 12 and p-type CdT
An In-containing Ag electrode 18 having a film thickness of 2 μm was provided on the n-type CdTe film 15 and the Cu-containing C electrode 17 under the same conditions as those for forming the e-film (see FIG. 2).
【００２３】上記の手順により作製された太陽電池に、
ガラス基板５側より自然太陽光に近似したスペクトルを
有するＸｅランプ光１９を強度ＡＭ１．５−１００ｍＷ
／ｃｍ2で照射した。その結果、開放電圧ＶOCが５．８
Ｖ、短絡電流ＩSCが２．７９ｍＡ／ｃｍ2であり、動作
点での形状因子ｆ．ｆ．が０．６５であることから、変
換効率は１０．５％となり、従来方法で作製した太陽電
池と同等の変換効率を示した。In the solar cell manufactured by the above procedure,
Intensity of Xe lamp light 19 having a spectrum similar to natural sunlight from the glass substrate 5 side is AM 1.5-100 mW.
/ Cm 2 was irradiated. As a result, the open circuit voltage V OC is 5.8.
V, the short circuit current I SC is 2.79 mA / cm 2 , and the form factor f. f. Is 0.65, the conversion efficiency is 10.5%, which is equivalent to the conversion efficiency of the solar cell manufactured by the conventional method.
【００２４】上記方法に従い、図２に示す構造のＣｄＴ
ｅ太陽電池を作製したところ、従来方法で５日間要した
ＣｄＴｅ太陽電池の製造が、１日に短縮することができ
た。According to the above method, the CdT having the structure shown in FIG.
When an e solar cell was produced, the production of the CdTe solar cell, which took 5 days by the conventional method, could be shortened to 1 day.
【００２５】[0025]
【発明の効果】本発明によれば、低廉なガラス基板を使
用でき、さらにＣｄＴｅ太陽電池の生産における工程数
を減少させることができる。それにより製作日数を大幅
に減らすことができ、製造コストの安価な太陽電池を提
供することができる。According to the present invention, an inexpensive glass substrate can be used, and the number of steps in the production of CdTe solar cells can be reduced. As a result, the number of manufacturing days can be significantly reduced, and a solar cell with low manufacturing cost can be provided.
【図１】図１は、イオンビームスパッタリング装置の概
略図である。FIG. 1 is a schematic diagram of an ion beam sputtering apparatus.
【図２】図２は、ＣｄＴｅ太陽電池の断面図である。FIG. 2 is a cross-sectional view of a CdTe solar cell.
１ 真空容器 ２ 真空ポンプ ３ Ａｒガス導入管 ４ Ｎ2ガス導入管 ５ ガラス基板 ６ 基板ホルダー ７ イオン源 ８ ターゲットホルダー ９ Ｃｄ過剰ＣｄＴｅターゲット １０ Ｔｅ過剰ＣｄＴｅターゲット １１ Ｃｕ含有Ｃターゲット １２ Ｉｎ含有Ａｇターゲット １３ マスク １４ 透明ｎ型ＣｄＴｅ膜 １５ ｐ型ＣｄＴｅ膜 １６ Ｃｕ含有Ｃ電極 １７ Ｉｎ含有Ａｇ電極 １８ リード線 １９ Ｘｅランプ光1 Vacuum Container 2 Vacuum Pump 3 Ar Gas Introducing Tube 4 N 2 Gas Introducing Tube 5 Glass Substrate 6 Substrate Holder 7 Ion Source 8 Target Holder 9 Cd Excess CdTe Target 10 Te Excess CdTe Target 11 Cu-Containing C Target 12 In-Containing Ag Target 13 Mask 14 Transparent n-type CdTe film 15 p-type CdTe film 16 Cu-containing C electrode 17 In-containing Ag electrode 18 Lead wire 19 Xe lamp light
Claims (2)
池の製造において、化学量論比よりもＣｄ過剰のＣｄＴ
ｅターゲットを用いて、透明ガラス基板上にＡｒガスと
Ｎ2ガスの混合ガスを雰囲気ガスとしてｎ型ＣｄＴｅ膜
を成膜し、次に、化学量論比よりもＴｅ過剰のＣｄＴｅ
ターゲットを用いて、ｎ型ＣｄＴｅ膜上にＡｒガスを雰
囲気ガスとしてｐ型ＣｄＴｅ膜を成膜し、最後にｎ型Ｃ
ｄＴｅ膜とｐ型ＣｄＴｅ膜とにオーミック電極を形成す
ることを特徴とするＣｄＴｅ太陽電池の製造方法。1. In the production of a CdTe solar cell by a sputtering method, CdT in excess of stoichiometric ratio CdT.
An e-target was used to form an n-type CdTe film on a transparent glass substrate using a mixed gas of Ar gas and N 2 gas as an atmosphere gas, and then CdTe in a Te excess of stoichiometric ratio was used.
Using the target, a p-type CdTe film is formed on the n-type CdTe film using Ar gas as an atmospheric gas, and finally the n-type CdTe film is formed.
A method for manufacturing a CdTe solar cell, which comprises forming an ohmic electrode on the dTe film and the p-type CdTe film.
記混合ガス中のＮ2ガスの混合比が０．１以上、０．８
以下であり、かつ該混合ガスの圧力が２×１０-4Ｔｏｒ
ｒ以上、１×１０-3Ｔｏｒｒ以下であることを特徴とす
る請求項１記載のＣｄＴｅ太陽電池の製造方法。2. In the formation of the n-type CdTe film, the mixing ratio of N 2 gas in the mixed gas is 0.1 or more and 0.8.
And the pressure of the mixed gas is 2 × 10 −4 Tor
The method for producing a CdTe solar cell according to claim 1, wherein the value is r or more and 1 × 10 −3 Torr or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8142853A JPH09326499A (en) | 1996-06-05 | 1996-06-05 | Production of cdte solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8142853A JPH09326499A (en) | 1996-06-05 | 1996-06-05 | Production of cdte solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09326499A true JPH09326499A (en) | 1997-12-16 |
Family
ID=15325148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8142853A Pending JPH09326499A (en) | 1996-06-05 | 1996-06-05 | Production of cdte solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09326499A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009146063A1 (en) * | 2008-04-02 | 2009-12-03 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
| US7910396B2 (en) | 2009-10-21 | 2011-03-22 | Sunlight Photonics, Inc. | Three-stage formation of thin-films for photovoltaic devices |
| US8012788B1 (en) | 2009-10-21 | 2011-09-06 | Sunlight Photonics Inc. | Multi-stage formation of thin-films for photovoltaic devices |
| US8110428B2 (en) | 2008-11-25 | 2012-02-07 | Sunlight Photonics Inc. | Thin-film photovoltaic devices |
| US9856143B2 (en) | 2008-10-17 | 2018-01-02 | Sunlight Photonics Inc. | Pressure controlled droplet spraying (PCDS) method for forming particles of compound materials from melts |
-
1996
- 1996-06-05 JP JP8142853A patent/JPH09326499A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009146063A1 (en) * | 2008-04-02 | 2009-12-03 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
| US7842534B2 (en) | 2008-04-02 | 2010-11-30 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
| US8431430B2 (en) | 2008-04-02 | 2013-04-30 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
| US9856143B2 (en) | 2008-10-17 | 2018-01-02 | Sunlight Photonics Inc. | Pressure controlled droplet spraying (PCDS) method for forming particles of compound materials from melts |
| US8110428B2 (en) | 2008-11-25 | 2012-02-07 | Sunlight Photonics Inc. | Thin-film photovoltaic devices |
| US7910396B2 (en) | 2009-10-21 | 2011-03-22 | Sunlight Photonics, Inc. | Three-stage formation of thin-films for photovoltaic devices |
| US8012788B1 (en) | 2009-10-21 | 2011-09-06 | Sunlight Photonics Inc. | Multi-stage formation of thin-films for photovoltaic devices |
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