JPH09316628A - Production of vapor-deposited body and vapor deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition device being a vapor deposition system for melting a vapor depositing material source by using an electron beam and improved in such a manner that a vapor depositing material is not deformed by an electron beam passing through vapor cloud. SOLUTION: This vapor deposition device includes a substrate supporting means (cleaning can 4) arranged in a chamber 9, a crucible 5 and an electron beam gun 7 applying an electron beam 8. It is provided with an apparatus configuration for shortening the distance at which the electron beam 8 passes through within a sticking preventing board 13 (in vapor cloud) in which vapor depositing material vapor is present as possible and electron beam deflecting devices 21 and 21a.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a vapor deposition body such as a magnetic tape and a vapor deposition apparatus used for the method. In particular, it is a method of melting a vapor deposition material source using a high energy beam such as an electron beam, and a vapor deposition material manufacturing method and vapor deposition improved so that the vapor deposition material is not easily altered by the high energy beam passing through a vapor cloud. Regarding the device.

[0002]

2. Description of the Related Art A conventional technique will be described by taking a magnetic tape as an example. It should be noted that this prior art means a technology which is the basis of the present invention recognized by the inventor of the present invention,
It does not mean a known technology under the Patent Law. Further, this does not mean that the pursuit of rights for what has been described as the prior art here is not abandoned. There are several methods for forming a magnetic film on a magnetic tape, and there is a method for forming a material mainly containing Co on the tape by vapor deposition. Since such a magnetic tape has good high-density recording characteristics, it is widely used as a high-performance magnetic tape such as a video tape.

FIG. 3 is a plan view schematically showing the structure of a conventional typical magnetic tape vapor deposition apparatus. This vapor deposition device has a large vacuum chamber 9. An exhaust device 10 is connected to the vacuum chamber 9, and the inside of the vacuum chamber 9 is maintained in vacuum. A cooling can 4 is arranged in the center of the vacuum chamber 9. The cooling can 4 is a rotating drum whose outer peripheral surface is cooled to -30 ° C. The base film 11 is supplied to the cooling can 4 from the unwinding roll 1 arranged on the side of the cooling can 4.
The film 11 is curved by the guide rollers 3 and 3 ′ so that the contact range with the cooling can 4 can be made longer. Then, the film 11 makes one round around the outer peripheral surface of the cooling can 4, and is wound around the winding roll 2 via the guide roller 3 '.

The area on the right side of the cooling can 4 in the figure is a vapor deposition section for forming a vapor deposition film on the surface of the film 11 which is the vapor deposition substrate. Here, a crucible 5 for melting a vapor deposition material source (magnetic material Co or Co—Ni) is arranged. Since Co has a high melting point for heating the vapor deposition material source,
An electron beam 8 is used. The electron beam 8 is emitted from the electron gun 7 attached to the inner wall of the vacuum chamber 9 through the hole 13 a of the deposition-inhibitory plate 13 (described later) and into the crucible 5.

A low incident angle regulating shutter 6 is provided between the crucible 5 and the cooling can 4. The low incidence angle regulating shutter 6 extends substantially at right angles to a line connecting the crucible 5 and the center of the cooling can 4 so as to cover the surface of the cooling can 4 around the line. The low incident angle control shutter 6 is for hindering the diffusion of vapor deposition material vapor.

FIG. 4 is a schematic view for explaining the operation of the low incident angle regulating shutter 6. In FIG. 4, the right end of the low incident angle regulating shutter 6 is 6a and the left end is 6b.
A point where the electron beam 8 hits the magnetic material in the crucible (vapor deposition source) is A. The vapor that evaporates at the point A and moves upward in the figure is the right end 6 of the low incident angle control shutter 6.
Proceed through the right side of a to reach point B on the surface of the film wound on the cooling can 4.

The angle θ formed by the line connecting the points B and A (the shortest straight line) and the extension of the line connecting the center O of the cooling can 4 and the point B is called the incident angle of vapor deposition. Point B in FIG.
Indicates that the line BA shades the right end 6a of the low incident angle regulating shutter, and θ is the minimum at this point B, so θ is the minimum incident angle. On the other hand, from point A to cooling can 4
If a line (not shown) is drawn so as to be in contact with the outer circumference of the line, the angle formed by this line and the line connecting the point O and the contact point is 90 °, so the incident angle of such a point is 90 °. (Maximum incident angle)
It is. Thus, the incident angle is above a certain level (eg 40
Diagonal vapor deposition is performed at temperatures above °. This oblique vapor deposition has the feature of high density and high output, and is therefore used for vapor deposition of magnetic recording media and the like.

An oxygen introducing tube 12 is installed on the back side (on the side of the cooling can 4) of the right end portion of the low incident angle regulating shutter 6. The oxygen introducing tube 12 is provided in the vacuum chamber 9 so as to stand upright in the direction perpendicular to the paper surface of FIG. A small amount of oxygen (O ₂ ) is supplied from the oxygen introducing pipe 12 into the vacuum chamber 9. This oxygen has the effect of improving the coercive force.

A portion of the cooling can 4 on the right side of the circumference of about 1/4 is surrounded by a deposition-preventing plate 13. Protective plate 13
Is for controlling the distribution of the vapor cloud within the deposition preventive plate 13. Therefore, vapor deposition on the film occurs
Substantially, it is limited to about 1/4 of the circumference surrounded by the deposition-inhibitory plate 13. The reason for doing so is to realize the above-mentioned oblique vapor deposition.

[0010]

In the vapor deposition apparatus shown in FIG. 3, the electron beam 8 traverses inside the deposition-inhibiting plate 13 from the upper right corner toward the crucible 5 at the lower left corner. That is,
The electron beam (trajectory) 8 has passed in the vicinity of an incident angle of 70 to 90 ° at which vapor deposition on the substrate is started. For this reason, the vapor cloud in the oxygen atmosphere and the electron beam react in a plasma state, disturbing an important initial state in thin film formation, and a stable thin film with high characteristics cannot be formed. In addition, if the length of the electron beam passing through the vapor cloud is long, the plasma-like reaction similarly expands, and it is not possible to form a thin film capable of obtaining high characteristics. But,
It has not been known until now that this electron beam trajectory affects the electromagnetic conversion characteristics and magnetic characteristics of the tape.

The present invention is a vapor deposition method in which a source of a vapor deposition material is melted by using a high energy beam such as an electron beam, and the vapor deposition material is improved so that the high energy beam passing through a vapor cloud does not easily change the quality of the vapor deposition material. An object is to provide a body manufacturing method and a vapor deposition apparatus.

[0012]

In order to solve the above-mentioned problems, the method for producing a vapor-deposited material of the present invention is to generate a vapor of a vapor-deposited material by applying a high-energy beam to a source of the vapor-deposited material in a chamber, and generate the vapor on the substrate. A method for manufacturing a vapor deposition body, wherein the distance through which the high energy beam passes through a zone (vapor cloud) in which the vapor of the vapor deposition material exists is shortened as much as possible.

Further, the vapor deposition apparatus of the present invention comprises a chamber, a substrate supporting means arranged in the chamber,
A vapor deposition apparatus comprising: a vapor deposition material source holding means also arranged in the chamber; and a high energy beam gun for applying a high energy beam to the vapor deposition material source held by the vapor deposition material source holding means; It is characterized in that equipment is arranged to minimize the distance that the high-energy beam passes through the zone (vapor cloud) in which the vapor deposition material vapor exists, or means is provided for that purpose.

That is, by shortening the length of the high energy beam passing through the vapor cloud as much as possible, alteration of the vapor deposition material by the high energy beam or reaction between the vapor deposition material activated by the high energy beam and the atmospheric gas To prevent deterioration of the deposited film.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION As one mode for minimizing the distance that a high energy beam passes through a vapor cloud, a high energy beam is applied to a diffusion direction of vapor of a vapor deposition substance from a vapor deposition substance source to a substrate surface. A large angle of inclination can be applied to the vapor deposition material source. In this case, the angle is preferably 60 ° or more.

Examples of the high energy beam referred to in the present invention include electron beams, lasers, ion guns and the like.

Further, examples of vapor deposition materials include Co and Co.
-Ni alloy etc. can be mentioned.

Examples of vapor-deposited products include magnetic recording media such as magnetic tapes and magnetic disks. In this case, examples of the vapor deposition substrate include PET, polyimide,
Examples include aramid and PEN film.

As a particularly useful form of the embodiment of the present invention, the method of vapor deposition is such that the line connecting the vapor deposition point on the surface of the substrate and the source of vapor deposition substance is with respect to the normal line at the vapor deposition point on the surface of the substrate. This is so-called oblique vapor deposition in which vapor deposition is performed at an angle (incident angle), and there is a form in which the high energy beam does not pass near the high incident angle vapor deposition point with an incident angle of 70 to 90 ° at which vapor deposition on the substrate is started. . In the vicinity of the vapor deposition point, deposition on the initial substrate, which is important in thin film formation, occurs, so that the alteration of the vapor deposition material due to the high energy beam becomes a problem.

[0020]

Embodiments Hereinafter, the vapor deposition apparatus according to the embodiments of the present invention will be described more specifically with reference to the drawings. FIG. 1 is a plan view schematically showing the configuration of a vapor deposition device according to an embodiment of the present invention. The entire configuration of FIG. 1 will be described although there is a part overlapping with the description of the vapor deposition device of FIG.

The vapor deposition apparatus shown in FIG. 1 has a large vacuum chamber 9 (an example of dimensions is width 1.5 m × length 5 m × height 2.5 m). In the vacuum chamber 9, an exhaust device (vacuum pump) 1
0 is connected, and the inside of the vacuum chamber 9 is 5 × 10 ^−5.
The vacuum is maintained at about Torr. A cooling can 4 (base support means) is arranged in the center of the vacuum chamber 9. The cooling can 4 is a rotating drum whose outer peripheral surface is cooled to -30 ° C.
The base film 11 is supplied to the cooling can 4 from the unwinding roll 1 arranged on the side of the cooling can 4. The film 11 is curved by the guide rollers 3 and 3 ′ so that the contact range with the cooling can 4 can be made longer. Then, the film 11 makes one round around the outer peripheral surface of the cooling can 4, and is wound around the winding roll 2 via the guide roller 3 '.

The area on the right side of the cooling can 4 in the figure is a vapor deposition section for forming a vapor deposition film on the surface of the film 11 which is the vapor deposition substrate. A crucible 5 (vapor deposition material source holding means) for melting a vapor deposition material source (magnetic material Co or Co—Ni) is arranged here. For heating the vapor deposition material source, C
Since o has a high melting point, the electron beam 8 is used. In the vapor deposition apparatus of FIG. 1, unlike the vapor deposition apparatus of FIG. 3, the electron gun 7 is mounted on the right side wall of the vacuum chamber 9.
Further, inside the vacuum chamber 9 inside the electron gun 7, a deflecting device 21 for the electron beam 8 is provided. The deflecting device 21 includes an electromagnetic coil and changes the magnetic field in its internal space to deflect the electron beam 8 downward in the drawing. On the other hand, the deflection coil 21a is a coil for scanning the beam in the longitudinal direction of the crucible. The electron beam 8 is scanned by the deflection coil 21a, and the deflection device 2
It is deflected downward by 1 and hits the inside of the crucible 5 through a hole 13b formed in the front part of the right wall of the deposition-inhibitory plate 13. In the vapor deposition apparatus of FIG. 1, the length of the electron beam trajectory traversing the vapor cloud is a short distance between the hole 13b and the crucible 5 (specific numerical values will be described later). Also, this electron beam trajectory is
It is distant from the upper portion (in the figure) of the deposition-inhibitory plate 13, which is the vapor deposition start region. Therefore, it is possible to minimize the problems caused by the electron beam irradiation alteration of the vapor deposition material.

A low incident angle control shutter 6 is provided between the crucible 5 and the cooling can 4. The low incidence angle regulating shutter 6 extends substantially at right angles to a line connecting the crucible 5 and the center of the cooling can 4 so as to cover the surface of the cooling can 4 around the line. The low-incidence-angle control shutter 6 is for blocking diffusion of vapor deposition material, like the low-incidence-angle control shutter of the vapor deposition apparatus shown in FIG. See the above section for the detailed description.

An oxygen introducing tube 12 is installed on the back side (cooling can 4 side) of the right end portion of the low incident angle regulating shutter 6. The oxygen introducing tube 12 is provided in the vacuum chamber 9 so as to stand upright in the direction perpendicular to the paper surface of FIG. A small amount of oxygen (O ₂ ) is supplied from the oxygen introducing pipe 12 into the vacuum chamber 9.

A part of the cooling can 4 on the right side of the circumference of about 1/4 is surrounded by the deposition-inhibiting plate 13. Protective plate 13
Is for controlling the distribution of the vapor cloud within the deposition preventive plate 13. Therefore, vapor deposition on the film occurs
Substantially, it is limited to about 1/4 of the circumference surrounded by the deposition-inhibitory plate 13. Further, in the vapor deposition device of FIG. 1, the left-right width of the deposition-inhibitory plate 13 is narrower (narrower pocket) than the vapor deposition device of FIG. Therefore, the length of the electron beam passing through the vapor cloud is further shortened.

FIG. 2 is a plan view schematically showing the construction of a vapor deposition apparatus according to another embodiment of the present invention. In the vapor deposition apparatus of this embodiment, the electron gun is located at the same position as the vapor deposition apparatus of FIG. 3 (right corner on the back wall). However, the electron beam trajectory 8 is
The back side (right side) of the deposition-inhibitory plate 13 is moved toward the front side, is deflected by the deflecting device 21′b, and enters into the deposition-inhibitory plate 13 through the hole 13b formed in front of the deposition-inhibition plate 13, and the crucible 5
To reach. Also in this case, as in FIG. 1, the length of the electron beam traversing the vapor cloud in the deposition-inhibiting plate 13 should be shortened, and the electron beam locus should traverse the vapor cloud at a position away from the vapor deposition start region. You can That is, there can be various concrete means for realizing such a state.

Specific Application Example A film was formed under the following conditions. (1) Film material: PET (2) Film width and thickness: 620 mm × 10 μm (3) Film traveling speed: 50 m / min (4) Vapor deposition material: Co-Ni (5) Electron beam intensity: 30 kV × 5 A (6) Length of electron beam traversing vapor cloud: 700 mm (7) Degree of vacuum in chamber: 8 × 10 ^-5 Torr (8) Deposition film thickness: 200 nm (0.2 μm)

The electromagnetic conversion characteristics of the formed magnetic tape were examined by comparison with a normal metal type 8 mm tape. As a result, Y- _out (luminance signal output) +6.0 dB, Y compared with the vapor deposition apparatus of FIG. 3 (length of electron beam traversing vapor cloud is 1,200 mm, other conditions are the same)
_{-C / N} (luminance signal carrier / noise) +5.0 dB, C
_-out (color signal output) +1.5 dB, C _{-C / N} (color signal carrier / noise) +4.0 dB, which were both high in the characteristic values.

[0029]

As is apparent from the above description, the present invention exhibits the following effects. When the present invention is applied to a vapor deposition type magnetic tape, a vapor deposition tape having high output characteristics and good C / N (carrier / noise ratio) can be manufactured. When the present invention is applied to the vapor deposition process of oblique vapor deposition, a vapor deposition film having the same characteristics as before can be obtained even if the minimum incident angle is lowered. Therefore, the use efficiency of raw materials is improved,
Cost reduction is also possible. Furthermore, since the vapor deposition efficiency is improved, the production speed is also improved.

[Brief description of drawings]

FIG. 1 is a plan view schematically showing a configuration of a vapor deposition device according to an embodiment of the present invention.

FIG. 2 is a plan view schematically showing the configuration of a vapor deposition device according to another embodiment of the present invention.

FIG. 3 is a plan view schematically showing the configuration of a conventional typical magnetic tape vapor deposition device.

FIG. 4 is a schematic diagram for explaining the operation of the low incident angle regulating shutter 6.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Unwinding roll, 2 ... Winding roll, 3 ... Guide roller, 4 ... Cooling can, 5 ... Crucible, 6 ... Low incident angle control shutter, 6a ... Right end, 6b ... Left end, 7 ... Electron gun, 8 ... Electron Beam, 9 ... Vacuum chamber, 10 ... Exhaust device, 11 ... Film, 12 ... Oxygen introduction tube, 13 ... Adhesion plate, 13a, b ... Hole, 21 ... Deflection device, 21a, b ... Deflection device (scanner)

Claims (8)

[Claims] 1. A method for producing a vapor-deposited material in which a vapor-deposited material source is irradiated with a high-energy beam in a chamber to generate vapor-deposited material, and the vapor is deposited on a surface of a substrate; A vapor deposition method for producing a vapor-deposited body, wherein the distance that the high-energy beam passes through is shortened as much as possible. 2. A method for producing a vapor-deposited material in which a vapor-deposited material source is irradiated with a high-energy beam in a chamber to generate vapor of the vapor-deposited material, and the vapor is deposited on a surface of a substrate; A method for producing a vapor-deposited material, which comprises inclining the high-energy beam at a large angle with respect to a diffusion direction of vapor of the vapor-deposited material and irradiating the vapor-deposited material source. 3. A method for producing a vapor deposition body, comprising: producing a vapor of a vapor deposition material by irradiating a high energy beam to a vapor deposition material source in a chamber; and depositing the vapor on a surface of a substrate; The line connecting the point and the vapor deposition material source is so-called oblique vapor deposition in which vapor deposition is performed at a certain angle (incident angle) with respect to the normal to the vapor deposition point on the substrate surface, and vapor deposition on the substrate is started. A method for producing a vapor-deposited body, characterized in that the high-energy beam is not passed near a high-incidence-angle vapor deposition point having an incident angle of 70 to 90 °. 4. A chamber, a substrate supporting means arranged in the chamber, a vapor deposition material source holding means also arranged in the chamber, and a vapor deposition material source held in the vapor deposition material source holding means. A vapor deposition apparatus including a high-energy beam gun for applying a high-energy beam; and a device arrangement for minimizing a distance that the high-energy beam passes through a zone (vapor cloud) in which the vapor of the vapor deposition material exists. Is it done?
And / or a means therefor is provided. 5. A chamber, a substrate support means arranged in the chamber, a vapor deposition material source holding means also arranged in the chamber, and a vapor deposition material source held in the vapor deposition material source holding means. A high-energy beam gun for applying a high-energy beam, comprising: a high-energy beam gun for inclining the high-energy beam at a large angle with respect to the diffusion direction of the vapor of the vapor of the vapor from the vapor source to the substrate surface. A vapor deposition apparatus, characterized in that the equipment is arranged for application to a source and / or means for it are provided. 6. A chamber, a substrate supporting means arranged in the chamber, a vapor deposition material source holding means also arranged in the chamber, and a vapor deposition material source held in the vapor deposition material source holding means. A high-energy beam gun for applying a high-energy beam; and a line connecting a vapor deposition point on a substrate surface and a vapor deposition material source with respect to a normal line at the vapor deposition point on the substrate surface at an angle ( It is configured to perform vapor deposition with an incident angle (oblique vapor deposition), and is configured to prevent the above high energy beam from passing near the high incident angle vapor deposition point with an incident angle of 70 to 90 ° at which vapor deposition on the substrate is started. A vapor deposition apparatus characterized by being provided. 7. A chamber, an exhaust means for the chamber, an oxygen inlet for introducing oxygen into the chamber, a cooling drum-like cooling can arranged in the chamber, and a tape for continuously running the tape around the cooling can. A feed means, a vapor deposition material source holding crucible arranged in the chamber adjacent to the cooling can, an electron gun for applying an electron beam to the vapor deposition material source in the crucible, and a low-pressure lamp arranged between the cooling can and the crucible. A vapor deposition apparatus comprising: an incident angle control shutter; and an adhesion preventive plate that restricts the spread of a vapor cloud to a part of a cooling can; an electron beam trajectory from the electron gun to a vapor deposition material source is an adhesion preventive plate. A vapor deposition apparatus for tapes, characterized in that each of the above-mentioned devices is constructed and arranged so that a distance passing through the inside is minimized. 8. The vapor deposition apparatus according to claim 7, further comprising means for deflecting the electron beam.