JPH092890A - Single crystal growth of compound semiconductor and apparatus therefor - Google Patents

Abstract

PURPOSE: To grow a single crystal having stable composition and excellent quality of a readily dissociating and evapotranspiring compound semiconductor by forming a heating region having a temperature at one end side higher than another end side in a furnace and growing a single crystal from a raw material melt in a specific state by a simpler construction. CONSTITUTION: A heating region having upper temperature higher than lower part is provided in a furnace body 1, and on the other hand, a first crucible 10 receiving a raw material for single crystal growth and a second crucible 11 receiving a raw material containing about the same composition as the raw material for single crystal growth are received in a sealing vessel 12 so that the second crucible 11 is placed on the upper part of the first crucible 10. A single crystal is grown from the raw material melt in the first crucible 10 by raising and lowering a temperature of the sealed vessel 12 in the heating region. The raw material in the second raw material-receiving vessel preferentially proceeds the dissociation according to the temperature rising and a gas of a high dissociation pressure component generates in the sealed vessel by the single crystal growing method of the compound semiconductor. By the gas, the dissociation in the first raw material receiving vessel is suppressed, and therefore, any of the components is suppressed as well as possible in the first raw material receiving vessel and a single crystal of excellent quality having an intended composition is grown.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention is applied to a II-VI group such as ZnSe or CdTe, a III-V group such as InP or GaP, or a ternary compound thereof under high temperature during crystal growth. The present invention relates to a method for producing a single crystal of a compound semiconductor in which a part of constituent elements are dissociated and easily evaporated, and an apparatus for producing the same.

[0002]

2. Description of the Related Art Conventionally, liquid-encapsulated Czochralski method (LEC method), horizontal Bridgman method (HB method), and vertical Bridgman method (VB) have been used to manufacture single crystals of compound semiconductors in which specific components are easily dissociated and evaporated. Method), vertical temperature gradient solidification method (VGF method), etc. are used. Among them, the VB method and the VGF method are highly expected as industrial methods because they can produce high-quality single crystals that are relatively large and have few dislocations.

By the way, when a raw material of a compound semiconductor is heated and melted to grow as a single crystal, if a specific component dissociates and evaporates, the composition of the completed single crystal is deviated and the desired single crystal cannot be obtained. Therefore, for example, Japanese Patent Laid-Open No. 64-374
No. 88 discloses a reaction tube 41 made of quartz, as shown in FIG. 4, when growing a single crystal by the vertical Bridgman method.
And a raw material storage container 43 for storing the raw material 42 in the upper growth chamber 41a, and a raw material 44 for vapor pressure control in the lower space. There is disclosed a method of growing the.

When, for example, a CdZnTe single crystal is grown by this method, Cd and Zn are contained as the vapor pressure control raw material 44. Then, after the raw material storage container 43 containing the CdZnTe crystal growth raw material 42 is charged into the growth chamber 41a, the reaction tube 41 is sealed. Then, the raw material 42 in the raw material container 43 is heated and melted by the upper heater 45, and then gradually cooled from 1140 ° C. to 1050 ° C. to grow a single crystal.

During this time, the vapor pressure control raw material 44 is the lower heater.
The temperature of 820 ° C is maintained by 46. As a result, Cd and Zn vapors having a vapor pressure according to the heating temperature are generated from the molten vapor pressure control raw material 44, and the growth chamber 41a is generated by this vapor.
The atmosphere inside is also controlled. As a result, dissociation in the raw material container 43 is suppressed, and the single crystal grows in a state in which the change in melt composition is suppressed.

[0006]

However, in the method described in the above publication, the heating of the vapor pressure control raw material 44 provided below by the lower heater 46 is performed independently of the heating of the raw material 42 by the upper heater 45. It is necessary to configure so that it can be precisely controlled. This is performed based on the temperature measurement signal from the thermocouple provided at the lower end of the reaction tube 41, but complicated management work such as management of temperature measurement accuracy is required.

In the structure described in the above publication, for example, Zn
In a compound semiconductor such as Se which has a high melting point of 1520 ° C and a dissociation pressure of Zn at the time of melting of 2 kgf / cm ² , the force due to the internal / external pressure difference based on this dissociation pressure causes the sealed reaction tube 41.
Act on. Therefore, it is necessary to manufacture the reaction tube 41 with a material having high strength at high temperature, and the selection range of the material is greatly restricted, so that the above method is difficult to apply.

The present invention has been made in view of the above-mentioned conventional problems, and an object thereof is to grow a high-quality single crystal having a stable composition with a simpler structure for a compound semiconductor which is easily dissociated and evaporated. It is to provide a method for growing a single crystal of a compound semiconductor to be obtained, and further to provide an apparatus for producing a single crystal that can more efficiently produce a compound semiconductor having a high dissociation pressure.

[0009]

In order to achieve the above object, in the method for growing a single crystal of a compound semiconductor of the present invention, a heating region in which the temperature of the other end side is higher than that of the one end side is formed in the furnace body. On the other hand, the first raw material storage container containing the raw material for single crystal growth and the second raw material storage container containing the raw material having substantially the same composition as the raw material for single crystal growth are The second raw material storage container is located on the end side and stored in an airtight container surrounding both containers, and the temperature of the airtight container is raised and lowered in the heating region to melt the raw material in the first raw material storage container. It is characterized by growing a single crystal from.

It is desirable to dispose a seed crystal on one end side of the first raw material container and grow a single crystal from the melt on the side in contact with the seed crystal. On the other hand, the apparatus for producing a single crystal of a compound semiconductor of the present invention includes a closed furnace body having a gas supply / discharge passage connected to the outside, and a heating region in which the temperature of the other end side is higher than that of the one end side in the furnace body. A heating means provided in the furnace body for forming, a first raw material storage container for storing a raw material for single crystal growth, and a second raw material storage container for storing a raw material having substantially the same composition as the raw material for single crystal growth. An airtight container in which the second raw material storage container is located on the other end side of the first raw material storage container and both containers are stored in the heating area; and an airtight container surrounding the airtight container inside the heating means. A chamber made of a conductive material, the airtight container is provided with a communication hole for communicating the inside and the outside of the airtight container, and a ventilation opening is provided below the heating means for communicating the inside and outside of the chamber with each other. It is characterized by being.

[0011]

The operation of the compound semiconductor single crystal growth method of the present invention will be described with reference to an example of application to a furnace structure based on the vertical temperature gradient solidification method. In this case, a heating region in which the temperature is raised above (on the other end side) below (on the one end side) is formed in the furnace body, and in this heating region, the first raw material container for storing the raw material for single crystal growth is formed. The single crystal is grown from the raw material melt in the raw material storage container by being arranged and being heated and lowered.

At this time, the second raw material storage container located above the first raw material storage container (on the other end side) is also heated at the same time as the first raw material storage container, and its heating temperature is higher than that of the first raw material storage container. It is always maintained at a high temperature. As a result, the dissociation accompanying the temperature rise advances first in the raw material in the second raw material storage container,
High dissociation pressure component vapor is generated in the airtight container. The vapor suppresses dissociation in the first raw material storage container, and as a result, composition deviation is suppressed as much as possible in the first raw material storage container, and a high-quality single crystal having the intended composition grows.

Moreover, in the above, since it is not necessary to control the heating temperature of the second raw material storage container independently of the first raw material storage container, the overall structure is simplified. In addition, by disposing a seed crystal on one end side (lower end side) of the first raw material container to perform crystal growth, it is possible to surely grow a single crystal having a predetermined orientation as a whole. On the other hand, in the compound semiconductor single crystal production apparatus of the present invention, the airtight container for accommodating the first and second raw material accommodating containers is provided with the communication hole that does not cause a pressure difference between the inside and the outside. Therefore, even if the vapor pressure due to dissociation during heating is high, the force due to the difference between the internal pressure and the external pressure does not act on the airtight container. As a result, the airtight container does not need to have high strength as long as it has heat resistance, which facilitates the production.
Further, since the material selection range is expanded, it is possible to select a material that does not pollute the growing crystal as much as possible.

Further, by enclosing the airtight container in the chamber whose inside and outside communicate with each other at the lower ventilation opening, the vapor flowing out through the communication hole of the airtight container descends from the upper side toward the ventilation opening in the chamber. At this time, it is possible to cause the vapor to be deposited at this portion by keeping the ventilation opening, which is located below the heating region by the heating means, in a low temperature state. As a result, steam does not come into contact with the heating means or the like outside the chamber, so that a short-circuit accident or the like is prevented.

[0015]

【Example】

Embodiment 1 Next, a specific embodiment of the present invention will be described.
This will be described with reference to FIGS. FIG. 1 shows an apparatus for producing a single crystal by the vertical temperature gradient solidification method (VGF method).
This apparatus has a high-pressure vessel 1 as a furnace body having a pressure resistant structure.
An upper closed heat insulating structure 2 arranged in the high-pressure container 1, a heater (heating means) 3 arranged inside the heat insulating structure 2, and a gas provided inside the heater 3. And an inverted cup-shaped chamber 4 made of an impermeable material.

The high-pressure container 1 is composed of a cylindrical high-pressure container main body 5 having an upper surface closed, and a lower lid 6 which is detachably and airtightly attached to a lower opening thereof. A gas supply / discharge passage 7 is provided on the upper wall surface of the high-pressure container main body 5 for injecting an inert gas such as argon gas into the high-pressure container 1 under pressure and discharging the same. The heater 3 is formed by arranging a plurality of cylindrical heater elements 8 ... In parallel in the vertical direction in a plurality of stages (4 stages in the figure), and each heater element 8 is provided in each stage portion. Temperature detector (not shown)
The supplied power is controlled so that the detected temperature at 1 is maintained at each set temperature. By controlling the supplied power, a heating region having a predetermined temperature gradient in which the temperature becomes higher in the upper part is formed in the chamber 4, and by raising and lowering the temperature while the temperature gradient is provided, the growth of a single crystal described later is performed. Done.

On the lower lid 6, a support base 9 located inside the chamber 4 is placed. Then, as will be described later, a first crucible (first raw material storage container) 10 storing a single crystal growth raw material and a second crucible (second raw material storage) storing the same raw material as described above are mounted on the support base 9. An airtight container 12 containing a container 11 is placed, and the entire airtight container 12 is heated by the heater 3. A ventilation opening 13 having a gap shape is formed between the lower edge of the chamber 4 and the lower lid 6, and the inside and outside of the chamber 4 are configured to communicate with each other through the ventilation opening 13.

The first crucible 10 is made of, for example, p-BN, has an inner diameter of about 15 mm, and is provided with a thin tube portion 10a for inserting the seed crystal 14 at the lower end portion as shown in FIG. The airtight container 12 for accommodating the first crucible 10 is made of a refractory metal such as molybdenum or a material having heat resistance and airtightness such as glassy carbon, and has a substantially cylindrical body 15 having an open upper end.
It has. The main body 15 has a diameter slightly larger than the outer diameter of the first crucible 10, and the closed portion on the lower end side thereof is formed in a shape extending from the tapered shoulder portion 10b on the bottom side of the crucible 10 to the narrow tube portion 10a. There is.

On the other hand, a cylindrical lid body 16 is fitted into the upper end opening of the main body 15. Then, with the tightening ring 17 externally fitted to the upper end side of the main body 15, and the holding screw 18 screwed from above to the female screw portion of the upper end side inner peripheral surface of the tightening ring 17, the main body 15 and the lid body 16 are provided. The brim-shaped portions respectively formed on the peripheral edges of the respective upper end portions are fixed to each other by sandwiching the seal ring 19 in the axial direction.

A communication hole (hereinafter referred to as a capillary) 21 is formed at the center of the lid body 16 and penetrates vertically. Further, the cap screw 18 has a through hole 22 formed coaxially with the capillary 21. The second crucible 11 is provided between the lower surface of the lid 16 and the upper edge of the first crucible 10.
It is placed on the first crucible 10 in a stacked manner from above. The second crucible 11 is also made of, for example, p-BN, has a diameter substantially the same as that of the first crucible 10, and is formed in a cup shape having a small height and a small volume. The first crucible 10
A communication opening 10c for communicating the inside and outside of the first crucible 10 with each other is provided in the upper edge of the first crucible 10 even when the second crucible 11 is placed in a close contact state from above.

Next, a procedure for producing a ZnSe single crystal using the above apparatus and an example of the result will be described.
First, a rod-shaped ZnSe seed crystal 14 is inserted into the thin tube portion 10a of the first crucible 10, and then the first crucible 10 is subjected to CVD by Raytheon Co.
About 40 g of polycrystalline ZnSe nodules produced by the method were filled. Further, about 10 g of ZnSe similar to the above was put in the second crucible 11, and these both crucibles 10 and 11 were housed in the airtight container 12 as shown in FIG.

Next, after opening the lower lid 6 of the high-pressure container 1 and placing the airtight container 12 on the support 9, the lower lid 6 is closed to place the airtight container 12 in the high-pressure container 1 as shown in FIG. I set it inside. After that, the inside of the high-pressure vessel 1 was evacuated through the gas supply / discharge passage 7, and then 5 kgf / cm ² of argon gas was supplied to the high-pressure vessel 1.
It was supplied inside to replace the internal atmosphere. Then 5kgf
Argon gas of / cm ² was injected, and then heating power was applied to the heater 3 to start heating. Continuing to raise the temperature, the upper side of the airtight container 12 has a melting point of ZnSe of 1550 ° C, which is 1520 ° C or higher.
In addition, on the lower side, 15 so that the seed crystal 14 remains without melting.
Adjust the heating temperature to 15 ℃, and adjust the temperature in the first and second crucibles 10/11.
The entire ZnSe raw material was melted. At this time, the pressure in the high-pressure container 1 was about 10 kgf / cm ² .

Thereafter, the electric power supplied to the two heater elements 8 at the center in the vertical direction is adjusted to correspond to the melting point.
The ZnSe raw material melted in the first crucible 10 was controlled so that the temperature range of 1520 ° C. was moved upward at about 3 mm / h, and the seed crystal was used.
Crystals were grown upward from the bottom side in contact with 14.
In this way, in the course of the crystal growth operation in which the material is heated to a temperature above the melting point and then cooled, the dissociation of the raw materials gradually progresses during the temperature rise. At this time, in the above-mentioned configuration, the second crucible 11 placed on the upper side is always maintained at a temperature higher than that of the first crucible 10 and is heated, and as a result, the second crucible 11 is filled. The raw material begins to dissociate first, and the airtight container
The vapor of the high dissociation pressure component is generated in the space inside 12. The vapor suppresses dissociation (pyrolysis) of the raw material or melt in the first crucible 10. Therefore, the first crucible 10
Inside, the crystal growth of the intended composition will be performed throughout.

When it is determined that the melt in the first crucible 10 is completely solidified by the above crystal growth operation, the entire temperature is reduced to about
The temperature is lowered at a rate of 100 ° C / h, and the furnace is cooled to a temperature of 150
When the temperature became lower than 0 ° C, argon gas was released to lower the pressure. When the temperature reached almost room temperature, the high-pressure container 1 was opened, the airtight container 12 was taken out, and both crucibles 10 and 11 were taken out from the airtight container 12.

The ZnSe-grown crystal in the first crucible 10 was a yellow transparent crystal which was considered to be one grain as a whole, although it partially contained twin crystals. The weight of the grown crystal in the first crucible 10 is increased by about 0.3%, and a part of ZnSe in the second crucible 11 for adjusting the atmosphere becomes vapor, which is lower than the second crucible 11. 1st crucible located at the lower temperature
Probably transported within 10.

The amount of ZnSe in the second crucible 11 is less than 0.5% excluding the above-mentioned transport amount, and it is considered that this amount of loss is evaporated from the capillary 21 to the outside of the airtight container 12. However, it was confirmed that it did not affect the composition of the produced single crystal. As described above, in the present embodiment, the same raw material as the grown crystal raw material is stored in the second crucible 11 to generate the vapor of the dissociation component, so that the crystal growth in which the dissociation is suppressed in the first crucible 10 is performed. Done. As a result, a good-quality single crystal having the intended composition can be obtained over the entire grown crystal. Moreover, in the above description, the second crucible 11 and the first crucible 10 are provided in the heating region where a temperature gradient is provided to raise and lower the temperature.
The heating of the 2nd crucible 11 can
Since it does not need to be controlled independently of the crucible 10, the overall configuration is simple.

In particular, if the two crucibles 10 and 11 are placed adjacent to each other so that the temperature difference between the first crucible 10 and the second crucible 11 becomes a necessary minimum, the melt in the first crucible 10 is prevented from dissociating. The vapor pressure required for the situation is the same as when it is spontaneously generated, and the composition becomes more stable. Further, for example, when a compound semiconductor composed of two elements is in a molten state, not only one component but also the other component becomes vapor (ZnSe, etc., often corresponds to this), as described above. By adjusting the vapor pressure of some of the constituent elements as in the conventional example, it is difficult to suppress sufficient dissociation, but in the above, since the same raw material as the growth crystal raw material is filled in the second crucible 11, The dissociation can be suppressed more reliably.

On the other hand, in the above embodiment, the first and second crucibles are used.
An airtight container 12 accommodating 10 and 11 is provided with a capillary 21 that does not generate a pressure difference between the inside and the outside. Therefore, even if the vapor pressure due to dissociation during heating is high, the airtight container 21
The force due to the pressure difference between inside and outside does not act on. As a result, the airtight container 21 does not need to have high strength as long as it has heat resistance, so that the manufacturing becomes easy.

Further, since the chamber 4 having the ventilation opening 13 at the lower side is provided so as to surround the airtight container 12, the vapor flowing out of the airtight container 12 through the above-mentioned capillary 21 moves upward in the chamber 4. To the ventilation opening 13. At this time, since the ventilation opening 13 is provided at a portion distant downward from the heating region by the heater 3, by keeping this portion at a low temperature,
The vapor may be allowed to deposit at this site.
As a result, steam does not come into contact with the heater 3 on the outside of the chamber 4, the power supply member for the heater 3, and the like, so that occurrence of a short circuit accident or the like is prevented. Also, if the entire inside of the furnace is contaminated by the diffused steam, a great amount of labor is required for maintenance work such as disassembling and cleaning the internal structure of the furnace at any time.
In the above device, since the diffusion of such steam into the entire furnace is suppressed, maintenance work is facilitated, and by this,
Manufacturing efficiency is improved.

Since the above-mentioned capillary 21 is provided on the lid 16 located above the second crucible 11, a part of the generated vapor is evaporated from the capillary 21 to the outside of the airtight container 12. However, the vapor pressure of the vapor component in the first crucible 10 is not significantly affected. Also,
The lid 16 and the body 15 of the airtight container 12 are made of a material such as graphite that is excellent in machinability and heat resistance and does not bond even at high temperature, and from the tightening ring 17 and the cap screw 18. Lid body 16 and body 15 using a screw-type clamping mechanism consisting of
The crucible 10 inside the airtight container 12
・ Handling of 11 etc. is extremely easy and airtight container
12 times can be used repeatedly.

[Embodiment 2] Next, another embodiment of the present invention will be described with reference to FIG. For convenience of explanation,
Members having the same functions as the members shown in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted. In FIG.
The manufacturing apparatus by the vertical Bridgman method used in this example is shown. In this device, the lower end opening of the high-pressure vessel main body 5 is covered by two members, a ring-shaped lower lid 6a and an inner lower lid 6b fitted from below so as to close the central opening of the ring-shaped lower lid 6a. It is being appreciated. On the other hand, the high-pressure vessel main body 5 is formed in an upper end opening shape, and a gas supply / discharge passage 7 is provided in an upper lid 5a that detachably covers the opening.

On the ring-shaped lower lid 6a, a cylindrical chamber holder 31 is provided upright along the inner peripheral edge thereof. The heat insulating structure 2 and the chamber 4 are supported by the upper end of the chamber holder 31. The chamber holder 31
A ventilation opening 13 is provided in the lower end portion of the through hole in the shape of a through hole, and an internal space surrounded by the holding body 31 and the chamber 4 mounted thereon and a space outside thereof are mutually provided through the ventilation opening 13. It is configured to communicate.

An elevating rod 32 extending vertically through the center of the inner lower lid 6b is provided so as to be airtight with the inner lower lid 6b. A support base 9 is provided on the upper end of the lifting rod 32.
Is attached, and the airtight container 12 having the same configuration as that of the first embodiment is placed on the support 9. In the above apparatus, the electric power supplied to the heater elements 8 is adjusted so that the inside of the chamber 4 is maintained at a predetermined temperature distribution in which the temperature is higher toward the top. Therefore, the lifting rod 32
The heating temperature of the airtight container 12 is controlled by moving up and down to change the height position of the airtight container 12 in the chamber 4.

In the above apparatus configuration, the airtight container 12 can be taken in and out of the high-pressure container 1 by the operation of lowering only the inner lower lid 6b. Ring-shaped lower lid
Chamber holder 31 on 6a and chamber 4 on it
And the heaters 3 and the like arranged outside these,
During normal times other than maintenance and inspection, the high-pressure container 1 is operated while being left inside.

A specific operation procedure when producing a ZnSe single crystal using the above production apparatus and an example of the result will be described. The seed crystal 14 and the ZnSe raw material similar to those in Example 1 were placed in the first crucible 10 and the ZnSe raw material was placed in the second crucible 11, both crucibles 10 and 11 were set in the airtight container 12, and the airtightness was further improved. The sex container 12 was set in the single crystal manufacturing apparatus by the vertical Bridgman method as shown in FIG.

After that, the atmosphere in the furnace was replaced by vacuuming and argon gas, and then argon gas of 50 kgf / cm ² was charged, and 1510 parts of the seed crystal 14 were filled at a rate of 500 ° C./h.
The raw material was melted at a temperature of 1550 ° C and an upper temperature of 1550 ° C.
At this time, the pressure was almost 100 kgf / cm ² . Then 20
The airtight container 12 as a whole was pulled down at a temperature decreasing rate of 3 mm / h under a temperature gradient of ° C / cm 2. The furnace was cooled when the upper part of the airtight container 12 reached 1300 ° C., and argon gas was discharged to the outside of the furnace when the upper part of the airtight container 12 reached 300 ° C. When the temperature dropped to about room temperature, the furnace was opened and the airtight container 12 was taken out.

The grown crystal taken out from the first crucible 10 was a transparent yellow color and was a beautiful one in which almost no twin crystal was observed with the naked eye. As a result of composition analysis, Zn: Se is almost 1: 1.
Was confirmed. [Comparative Example] The same apparatus as in Example 1 was used, and an airtight container was used.
A ZnSe single crystal growth operation was performed by the same procedure and conditions as in Example 1 except that the second crucible 11 was not placed in 12.

The grown crystals thus obtained were blackish when observed with the naked eye, and a weight loss of about 1% was observed. In addition, there were many layered patterns due to twinning.
As described above, in each of the above examples, when adjusting the composition intended in the production of a compound semiconductor single crystal with a high dissociation pressure, the component elements are independently heated for controlling the vapor pressure of the high dissociation pressure component. There is no need to use a complicated method such as generating steam by using For example, with a two-component system, a compound single crystal having a composition of 1: 1 can be easily produced.

An airtight container 12 made of an airtight material
In order to prevent the force due to the pressure difference between the inside and the outside from acting on the inside and outside pressures by providing a communication hole such as the capillary 21, single crystal growth operation in a high pressure inert gas atmosphere of 100 kgf / cm ² or more, for example. However, it is possible to easily do this, and the reproducibility of the composition is good when the single crystal growth operation is repeated, and it is very easy to industrially produce a single crystal, which causes problems in quality variation. Be converted.

The present invention is not limited to the above-mentioned embodiments. For example, II-VI group such as CdTe other than ZnSe,
Method for producing single crystal of compound semiconductor such as III-V group such as InP, GaP, etc., or ternary compounds thereof, in which a part of constituent elements are easily dissociated and dissipated at high temperature during crystal growth, and production thereof It can be applied to a device.

[0041]

As described above, according to the method for growing a single crystal of a compound semiconductor of the present invention, dissociation occurs first in the second raw material storage container located on the higher temperature side than the first raw material storage container. Since this progresses and dissociation in the first raw material storage container is suppressed by this, a good quality single crystal having an intended composition can be grown. Moreover, since it is not necessary to control the heating of the second raw material storage container independently of the first raw material storage container, the overall configuration is simplified.

In the compound semiconductor single crystal production apparatus of the present invention, the forces associated with the internal and external differential pressures hardly act on the airtight container heated to a high temperature together with the first and second raw material storage containers. Therefore, the production is easy, and the selection range of the material is widened, so that it is possible to select the material that does not contaminate the grown crystal as much as possible, which also makes it possible to grow a higher quality single crystal.

Further, by surrounding the airtight container with the chamber having the ventilation opening below, it is possible to prevent the vapor flowing out from the communication hole of the airtight container from flowing out of the chamber. As a result, for example, maintenance of a device for preventing occurrence of a short circuit accident or the like is facilitated, so that a single crystal of a compound semiconductor having a high dissociation pressure can be manufactured more efficiently.

[Brief description of drawings]

FIG. 1 is a schematic vertical sectional view showing a configuration of a single crystal manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a vertical cross-sectional view showing an airtight container set in the single crystal manufacturing apparatus.

FIG. 3 is a schematic vertical sectional view showing a configuration of a single crystal manufacturing apparatus according to another embodiment of the present invention.

FIG. 4 is a schematic longitudinal sectional view showing the configuration of a conventional single crystal manufacturing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 High-pressure container (furnace body) 3 Heater (heating means) 4 Chamber 7 Gas supply / discharge passage 10 First crucible (first raw material storage container) 11 Second crucible (second raw material storage container) 12 Airtight container 13 Vent opening 14 seed crystals 21 capillaries (communication holes)

Front page continuation (72) Inventor Hiroshi Okada 1-5-5 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Inside Kobe Research Institute of Kobe Steel, Ltd. No. 5-5 Inside Kobe Research Institute of Kobe Steel, Ltd. (72) Inventor Seiichiro Omoto 1-5-5 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Inside Kobe Research Institute of Kobe Works, Ltd.

Claims (3)

[Claims] 1. A first raw material container for holding a raw material for growing a single crystal while forming a heating region in which a temperature at the other end side is made higher than that at the one end side in the furnace body, and the raw material for growing the single crystal. And a second raw material storage container containing a raw material having substantially the same composition as that of the first raw material storage container, the second raw material storage container is located on the other end side of the first raw material storage container, and the second raw material storage container is stored in an airtight container surrounding both containers. A method for growing a single crystal of a compound semiconductor, wherein a single crystal is grown from a melt of a raw material in a first raw material storage container by raising and lowering the temperature of an airtight container in the heating region. 2. A method for growing a single crystal of a compound semiconductor, comprising disposing a seed crystal on the one end side of the first raw material container and growing the single crystal from the melt on the side in contact with the seed crystal. 3. A closed furnace body having a gas supply / discharge path connected to the outside, and a furnace body provided to form a heating region in which the temperature of the other end side is higher than that of the one end side in the furnace body. Heating means, a first raw material storage container for storing a raw material for single crystal growth, a second raw material storage container for storing a raw material having substantially the same composition as the raw material for single crystal growth, and the above-mentioned first raw material storage container An airtight container, in which the second raw material storage container is located on the other end side and which stores both containers and is placed in the heating region, and a chamber made of an airtight material that surrounds the airtight container inside the heating means, The airtight container is provided with a communication hole for communicating the inside and the outside of the airtight container, while a ventilation opening for communicating the inside and the outside of the chamber is provided below the heating means. Single crystal manufacturing equipment.