JP3445046B2 - Method and apparatus for producing compound crystal - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for producing a crystal of a compound in which a part of constituent elements are easily dissociated and evaporated at high temperature.

[0002]

2. Description of the Related Art A liquid-encapsulated Czochralski method (LEC method), a horizontal Bridgman method (HB method), a vertical Bridgman method is used to grow a compound semiconductor single crystal such as GaAs as a crystal growth method from a melt. (VB method), solidification method under vertical temperature gradient (VGF
Method) is used. Among these, VB method and VGF
The method is capable of producing a high quality single crystal having a relatively large size and few dislocations, and thus is expected to be an industrial production method.

By the way, III-V such as GaAs, InP, GaP, etc.
Group II, compound semiconductors of the II-VI group such as ZnSe and CdTe have a high dissociation pressure component in the raw material constituent elements, for example As in GaAs, in the process of crystal growth in which the raw material is melted by heating and then the melt is solidified. , ZnSe is apt to dissociate and evaporate Zn, which tends to cause compositional deviation in the finished single crystal.

Therefore, in order to suppress transpiration due to such dissociation, for example, in Japanese Patent Laid-Open No. 63-274784, as shown in FIG. 3, a crucible 52 arranged in a pressure vessel 51 as a furnace body is provided. An apparatus in which a reservoir 53 for generating vapor of a high dissociation pressure component is further provided on the lower side is disclosed. When a polycrystalline raw material 54 such as GaAs is contained in the crucible 52 for crystal growth, As is contained in the reservoir 53 as a high dissociation pressure component 55. The crucible 52 and the reservoir 53 are housed in a cylindrical growth container 56 whose lower part is closed, and set in the pressure container 51. The crucible support base 57 between the crucible 52 and the reservoir 53 is made of, for example, a porous material having air permeability. In addition, a lid 58 that closes the upper opening of the growth container 56.
An upper shaft 59 for raising and lowering this is connected to the.

In the above apparatus, first, the pressure vessel 51 is evacuated with the upper opening of the growth vessel 56 opened, and then the pressure vessel 51 is filled with an inert gas such as argon gas. The inside pressure is increased to several atmospheres to 100 atmospheres. Then, with the lid 58 descending and the upper opening of the growth container 56 being closed, heating by the main heater 60 is started, and the polycrystalline raw material 54 is melted. At this time, the sub-heater 61 also heats the high dissociation pressure component 55 in the reservoir 53, and the As vapor generated thereby adjusts the As vapor pressure in the growth container 56. As a result, the dissociation / transpiration of As from the melted polycrystalline raw material 54 is suppressed.

In this state, by operating the lower shaft 62, the growth vessel 56 is lowered, the crucible 52 is gradually moved to a low temperature region, and the raw material melt in the crucible 52 is solidified.
Single crystal grows. When this crystal growth operation is completed, the energization of the main heating heater 60 and the sub heating heater 61 is stopped, and thereafter, the temperature is lowered to around room temperature by furnace cooling, and the grown crystal is taken out from the pressure vessel 51.

[0007]

However, in the manufacturing method described in the above publication, the As filled in the growth container 56
Since the condensed powder of steam is in a state of being spread widely on the inner wall surface of the growth container 56, there is a problem that sufficient productivity cannot be obtained. That is, the condensation of As vapor occurs at the lowest temperature in the growth container 56 as the temperature decreases during furnace cooling. During crystal growth, a temperature distribution is formed in the furnace in which the temperature becomes higher toward the upper side.Therefore, at the beginning of furnace cooling, As vapor condensation occurs at the bottom of the growth container 56, that is, near the reservoir 53. . However, as time goes by, the inside of the furnace is cooled down with a tendency of soaking, so that the condensation region of As gradually expands upward, and as a result, it spreads widely on the inner wall surface of the growth vessel 56. The coagulated powder is attached.

As described above, if As remains attached to the inner surface of the growth container 56, the vapor pressure cannot be controlled accurately during the next crystal growth. Therefore, an operation of removing As attached to the inner surface is required every time the crystal growth operation is completed, and as a result, sufficient productivity cannot be obtained. On the other hand, in the apparatus described in the above publication, inside the heaters 60 and 61, the crucible 52 and the reservoir 53 are surrounded by a closed growth container 56 to form a vapor pressure control space for the high dissociation pressure component. In this case, when the equilibrium dissociation pressure of the high dissociation pressure component is high, a large force based on the internal / external differential pressure acts on the growth container 56. For this reason, the growth vessel 56 is easily damaged, and this also causes a decrease in productivity.

The present invention has been made in view of the above-mentioned conventional problems, and a method for producing a crystal of a compound, which can suppress the evaporation of raw material constituent elements during crystal growth and efficiently produce a high quality single crystal, and The purpose is to provide the device.

[0010]

In order to achieve the above object, a method for producing a crystal of a compound of the present invention comprises a raw material container in which a raw material is housed in a closed furnace body, and a high dissociation content in the raw material constituent elements. A reservoir containing a pressure component is installed, and while the reservoir is heated to a predetermined temperature to adjust the vapor pressure of the high dissociation pressure component around the raw material storage container, the raw material in the raw material storage container is once melted and then solidified. A method for producing a crystal of a compound which is allowed to crystallize, characterized in that after crystallization, the furnace is cooled while locally forcibly cooling the vicinity of the reservoir.

As described above, during cooling of the furnace after crystallization, the vicinity of the reservoir is forcibly cooled locally, and the temperature of the entire reservoir is lowered while maintaining the lowest temperature in the furnace. The high dissociation pressure components vaporized during the crystallization operation condense near the reservoir. When the concentration is reduced and the concentration is reduced in the vicinity of this region, the vapor of the high dissociation pressure component moves by diffusion from a region having a higher temperature than this region, and this is further condensed. In this way, the condensation in the vicinity of the reservoir proceeds with the decrease in temperature, accompanied by the diffusion flow from the high temperature region. As a result, the high dissociation pressure component vaporized during the crystallization operation is collected near the reservoir during cooling of the furnace, and is prevented from condensing and adhering in other regions. This reduces the maintenance work required in the furnace before starting the next crystal growth operation, thus improving the productivity.

According to the above-mentioned manufacturing method, the main heating means for heating the raw material for crystal growth contained in the raw material container in the closed furnace body and the raw material contained in the reservoir are provided. This can be preferably carried out by a compound crystal production apparatus provided with a sub-heating means for heating the high dissociation pressure component in the constituent elements and a cooling means for locally and forcibly cooling the vicinity of the reservoir.

According to another aspect of the present invention, in such an apparatus,
As described above, in the furnace body filled with the inert gas, an airtight chamber that surrounds the raw material storage container and the reservoir inside the main heating means is further provided, and the airtight chamber,
It is preferable that a communication passage that communicates the inside and the outside with each other is formed in a portion of the main heating unit and the sub-heating unit that is apart from the heating region.

According to this structure, the airtight chamber that surrounds the raw material container and the reservoir is provided with the communication passage that does not cause a pressure difference between the inside and the outside. Therefore, even when the vapor pressure due to dissociation during heating is high, No force due to the pressure difference between the inside and the outside acts on the hermetic chamber. This prevents damage to the hermetic chamber. Moreover, during the crystal growth, a part of the vapor flowing from the inside of the airtight chamber to the outside through the communication passage is formed in a portion where the above-mentioned communication passage is separated from the heating region of the main heating means and the auxiliary heating means and can be in a low temperature state. Therefore, it is possible to deposit when passing through this communication passage. As a result,
The vapor does not flow out of the airtight chamber, which facilitates the maintenance of the device for preventing the occurrence of a short circuit accident in the power supply member for the main heating means and the like. Crystal growth can be performed more efficiently.

[0015]

DETAILED DESCRIPTION OF THE INVENTION

[Embodiment 1] Next, referring to FIG.
Will be described with reference to. This figure shows the solidification method (V
1 shows an apparatus for producing a single crystal by the GF method, which comprises a pressure vessel 1 as a furnace body having a pressure resistant structure, and an upper closed heat insulating structure 2 housed inside the pressure vessel 1.
And a main heating heater (main heating means) 3 including a plurality of upper and lower stages (five stages in the figure) of cylindrical heater elements 3a to 3e arranged inside thereof.

The pressure vessel 1 has a cylindrical pressure vessel body 1a with an upper portion closed and a lower opening that is detachably attached to the pressure vessel body 1a.
It is composed of a lower lid 1b which is hermetically attached by a seal ring 4. The lower lid 1b is provided with a gas supply / discharge passage 5 for pressurizing and injecting an inert gas such as argon gas into the pressure vessel 1. Further, in the pressure vessel 1, an inverted cup-shaped airtight chamber 6 that surrounds the inner space of the main heater 3 is arranged in a state of being placed on the lower lid 1b. The hermetic chamber 6 is made of a material having heat resistance and gas impermeability such as high melting point metal such as molybdenum or glassy carbon. Then, in the airtight chamber 6, a support base 7, a reservoir 8, a crucible base 9 and a crucible 10 are sequentially arranged from the bottom side thereof.

The support base 7 mounted on the lower lid 1b is formed in a substantially cylindrical shape, the outer diameter of which is substantially the same as the inner diameter of the airtight chamber 6, and the upper end side of which is a small-diameter convex shape protruding upward. Department
Formed as 7a. An annular sub-heater (sub-heating means) 11 is fitted around the outer periphery of the small-diameter convex portion 7a, and the sub-heater 11 and the small-diameter convex portion 7a are flush with each other, and have a cylindrical shape with a bottom. A reservoir 8 is placed. The reservoir 8 is made of a heat-resistant material such as high melting point metal such as molybdenum or glassy carbon, and the high dissociation pressure component 12 is contained therein. The reservoir 8 is heated by the sub heater 11 which is in contact with the outer peripheral side of the lower surface thereof.

A column-shaped crucible table 9 is further placed on the reservoir 8, and a crucible 10 as a raw material storage container is recessed on the crucible table 9 from the upper end surface of the crucible table 9 downward. It is fitted and inserted in the supporting hole to be inserted and is supported in a substantially upright state. As a result, the crucible 10 is located in the control heating area by the main heater 3.

The crucible 10 is made of, for example, p-BN, and a thin tube portion 10a into which a rod-shaped seed crystal 15 described later is inserted at its lower end portion.
Is provided, and the upper part thereof is formed in a circular tube shape via the tapered portion 10b. On the other hand, inside the support base 7, a cooling water pipe 13 extending downward from the region of the small diameter convex portion 7a on the upper end side thereof through the lower lid 1b is provided as cooling means. By circulating cooling water from the outside in the cooling water pipe 13, the reservoir 8 can be forcibly cooled.

The reservoir 8 whose upper surface is covered by the lower surface of the crucible base 9 is formed with a gas passage opening 8a communicating with the inside and outside thereof in a notched shape to the upper part of the peripheral wall. On the other hand, in the airtight chamber 6, a pore-shaped communication passage 6a is formed in a portion of the airtight chamber 6 near the lower lid 1b, which is maintained at a low temperature, for communicating the inner and outer spaces of the airtight chamber 6 with each other. The communication passage 6a prevents the pressure difference between the inside and the outside of the airtight chamber 6 from being generated.
The airtight chamber 6 is prevented from being damaged when the inside is brought to a predetermined high pressure state.

An operation procedure for growing, for example, a GaAs single crystal using the above apparatus will be described below. First, a rod-shaped GaAs single crystal is seeded on the thin tube portion 10a of the crucible 10.
As a material for crystal growth, GaAs polycrystal is filled therein as 15, and as a high dissociation pressure component 12, As is filled in the reservoir 8. Then, the crucible 10 and the reservoir 8 are arranged in the pressure vessel 1 as shown in the figure to seal the pressure vessel 1, and then the gas replacement inside the pressure vessel 1 is evacuated by an argon gas through the gas supply / discharge passage 5. It is performed by injection, and argon gas of several atm to several tens of atm is further filled.

After that, energization of the heater elements 3a to 3e of the main heating heater 3 is started, and the heater elements 3a to 3e are supplied so that the temperature distribution in the airtight chamber 6 becomes higher toward the top. Heat while controlling the power.
Then, the temperature is raised until the raw material in the crucible 10 is melted while leaving the lower part of the seed crystal 15. On the other hand, at the same time when the main heater 3 is energized, heating of the high dissociation pressure component 12 in the reservoir 8 is also started by the sub heater 8. The heating temperature of the reservoir 8
The vapor pressure of As vapor generated at about 618 ℃, so that the equilibrium vapor pressure of As at the melting point of GaAs (1238 ℃) is about 1 atmosphere.
Adjust to.

After the raw material in the crucible 10 is melted as described above to form the raw material melt 16, the electric power supplied to the heater elements 3a to 3e is adjusted, and the temperature of the entire heating control region by the main heater 3 is adjusted. Is gradually decreased while maintaining a predetermined temperature gradient. As a result, the raw material melt 16 becomes a seed crystal 15
The GaAs single crystal 17 grows by solidifying from the lower side in contact with the upper side.

As described above, in the course of the crystal growth operation in which the raw material in the crucible 10 is heated to a temperature exceeding the melting point of GaAs, melted, and then cooled, the dissociation of the raw material gradually progresses during the temperature rise. At this time, in the above configuration, in the reservoir 8
As vapor is generated, and this As vapor flows out of the reservoir 8 through the gas flow opening 8a and fills the airtight chamber 6. Therefore, when the raw material in the crucible 10 is melted, an As vapor atmosphere in which the dissociation of the GaAs raw material is suppressed is formed around the crucible 10. Thereby, dissociation of the raw material melt 16 in the crucible 10 is suppressed, and from the raw material melt 16,
A single crystal 17 having the intended composition grows throughout.

The raw material melt in the crucible 10 by the above-mentioned operation
After the entire 16 is solidified and the single crystal growth is completed, the energization to the main heater 3 and the sub heater 11 is stopped and the temperature is lowered. At this point, the passage of cooling water to the cooling water pipe 13 is started. Continue furnace cooling in this state, for example, crucible 10
When the temperature reaches about 300 ° C, the argon gas in the pressure vessel 1 is discharged to the outside of the furnace. Then, when the temperature has dropped to about room temperature, the lower lid 1a is lowered to open the pressure vessel 1, The crucible 10 is collected and the grown crystal is taken out.

As described above, by circulating the cooling water through the cooling water pipe 13 during the furnace cooling after the completion of the single crystal growth operation,
Almost all of the As vapor filled in the airtight chamber 6 returns to the reservoir 8 to be condensed and collected in the reservoir 8. That is, by forcibly cooling the reservoir 8,
The temperature of the entire reservoir 8 is lowered while maintaining the lowest temperature in the airtight chamber 6. As the temperature decreases, the equilibrium vapor pressure of As also decreases, but at this time, the As vapor becomes supersaturated near the reservoir 8 and the vapor in this vicinity condenses. As a result, when the concentration in the vicinity decreases, the vapor of As moves by diffusion from above where the temperature is higher than this region, and the As vapor further condenses. in this way,
Condensation in the vicinity of the reservoir 8 proceeds with diffusion flow from the high temperature region, and as a result, almost all of the As vaporized during the crystallization operation is recovered in the reservoir 8 during cooling of the furnace. become. As a result, adhesion and condensation on the inner surface of the airtight chamber 6 can be suppressed, and maintenance work in the furnace required before starting the next crystal growth operation can be reduced. Productivity is improved.

[Second Embodiment] Next, another embodiment of the present invention will be described with reference to FIG. The members having the same functions as the members shown in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted. The figure shows a single crystal manufacturing apparatus by the vertical Bridgman method (VB method). In this apparatus, a crucible elevating shaft 21 is provided which vertically penetrates the center of the lower lid 1b of the pressure vessel 1 vertically. There is. The elevating shaft 21 is configured to be vertically movable by an external drive mechanism (not shown), and a substantially column-shaped crucible stand 9 is attached to the upper end of the elevating shaft 21. A crucible 10 is supported on the crucible base 9 in a substantially upright state as described above.

On the other hand, an airtight chamber 6 is placed on the lower lid 1b in the same manner as described above so as to surround the crucible 10 and the crucible base 9 described above. The airtight chamber 6 is formed thicker below the step surface 6b so that the step surface 6b is formed inside the cylindrical peripheral wall. The thick wall portion 6c is provided with an annular groove that is recessed downward from the stepped surface 6b to form a reservoir 8 that stores the high dissociation pressure component 12.

The thick portion 6c is formed to have an inner diameter substantially the same as the outer diameter of the crucible base 9 described above. Further, in the same figure, the crucible table 9 is shown in the highest position in the pressure vessel 1. In this state, the lower end of the crucible table 9 is located slightly below the step surface 6b. Therefore, the crucible base 9 is lowered from the position shown in the drawing while the lower end side of the crucible base 9 is substantially fitted to the thick portion 6c. By maintaining such a fitted state, the vapor of the high dissociation pressure component 12 generated in the reservoir 8 does not directly flow to the lower side of the crucible base 9 through the fitting gap, and the crucible
Guided upwards around 10. The crucible table 9 is formed with a communication hole 9a that penetrates the crucible table vertically and has a pore size that does not allow the vapor of the high dissociation pressure component 12 to easily pass therethrough.
The upper and lower spaces of the crucible base 9 communicate with each other through the.

In the airtight chamber 6 in which the reservoir 8 is integrally formed as described above, an annular cooling water passage 13a is further formed below the reservoir 8 in the thick portion 6c. On the other hand, inside the thick portion 6c, the cooling water inlet side pipe 13b and the cooling water outlet side pipe that vertically penetrate the lower lid 1b, respectively.
13c and are provided. The respective upper ends of the pipes 13b and 13c are connected to the cooling water flow path 13a, respectively, so that cooling water can be circulated from the outside to the cooling water flow path 13a. The water flow path 13a and the cooling water pipes 13b and 13c constitute a cooling means.

In the above apparatus, a cylindrical heater element 3a having a plurality of upper and lower tiers (two tiers in the figure) is provided on the upper side of the outer space of the airtight chamber 6 as described above.
While the main heating heater 3 composed of 3b is arranged, a cylindrical sub-heating heater 11 is provided below the main heating heater 3 at the height position of the high dissociation pressure component 12 housed in the reservoir 8. It is arranged together. On the other hand, the container body of the pressure container 1
1a is formed in a cylindrical shape whose upper end is also opened, and a gas supply / discharge passage 5 is provided in an upper lid 1c which covers this upper end opening.

An operation procedure for growing, for example, a GaAs single crystal using the above apparatus will be described below. First, in the same manner as described above, a GaAs seed crystal is formed in the thin tube portion 10a of the crucible 10.
15 is set, and a raw material of GaAs polycrystal is filled therewith, and As is filled in the reservoir 8 as the high dissociation pressure component 12.

After that, the crucible 10 and the airtight chamber 6 provided with the reservoir 8 are set as shown in the figure, and then the gas inside the pressure vessel 1 is replaced by evacuation / injection of argon gas. After the argon gas of 10 atm is filled, the main heater 3 and the sub heater 11 are energized to start heating the raw material in the crucible 10 and the high dissociation pressure component 12 in the reservoir 8. Then, the raw material is melted leaving the lower side of the seed crystal 15. At this time, as the electric power supplied to the main heater 3 is increased, the higher the temperature distribution is, the higher the temperature distribution becomes.
While adjusting so that it is formed on the upper side, the electric power supplied to the sub-heater 11 is adjusted so that the temperature of the reservoir 8 is about 618 ° C. in the same manner as described above.

In this state, the crucible lifting shaft 21 is slowly lowered to gradually move the crucible 10 to a low temperature range. As a result, a single crystal grows from the lower side in contact with the seed crystal 15 in the raw material melt 16 toward the upper side. After the single crystal growth is completed, the main heater 3 and the sub heater
When the power supply to 11 is stopped, the circulation of the cooling water through the cooling water passage 13a is started, and the furnace is cooled in this state. As a result, similarly to the above, the portion of the reservoir 8 maintains the lowest temperature state in the airtight chamber 6 and cools down to near room temperature. In this process, the As vapor that has evaporated in the airtight chamber 6 is evaporated. Are almost all returned to the reservoir 8 to be condensed and collected.

As described above, in each of the above embodiments, when the raw material in the crucible 10 is heated to produce a single crystal, first, the vapor of the high dissociation pressure component 12 generated in the reservoir 8 is used. An atmosphere is formed that suppresses dissociation of the raw materials within 10. Therefore, it is possible to perform good quality single crystal growth of the intended composition throughout the crucible 10.
After completion of crystal growth, the high dissociation pressure component vaporized during the crystal growth operation is almost completely recovered in the reservoir 8 by cooling the furnace while forcibly cooling the vicinity of the reservoir 8. . As a result, it is possible to prevent the inner surface of the airtight chamber 6 from being condensed and adhered, whereby the maintenance work in the furnace required before starting the next crystal growth operation is reduced and the productivity is improved.

Further, in each of the above-described embodiments, the airtight chamber 6 surrounding the crucible 10 and the reservoir 8 is provided with the communication passage 6a below the airtight chamber 6. Therefore, even if the vapor pressure due to dissociation during heating is high, the force due to the difference between the internal pressure and the external pressure does not act on the airtight chamber 6. As a result, the airtight chamber 6 does not need to have high strength as long as it has heat resistance, so that it is easy to manufacture, and the selection range of materials is widened. Therefore, materials that do not contaminate the growing crystals should be selected as much as possible. It will be possible. Therefore, the single crystal excellent in quality can be manufactured also by this.

On the other hand, part of the As vapor generated in the reservoir 8 flows out to the lower side during the crystal growth operation, for example, through the communication hole 9a formed in the crucible base 9 in the second embodiment, and further in the hermetic chamber. 6 will flow to the communication passage 6a, but at this time, since the communication passage 6a is provided at a position apart from the heaters 3 and 11 below, by keeping this position at a low temperature state. , Vapor can be deposited at this site. As a result, steam does not come into contact with the heaters 3/11 outside the airtight chamber 6 and the power supply members for the heaters, so that a short-circuit accident or the like is prevented. Further, if the entire inside of the furnace is contaminated by the diffused steam, a great amount of labor is required for maintenance work such as disassembling and cleaning the internal structure of the furnace at any time. Maintenance work is facilitated because diffusion is suppressed throughout the furnace, which also improves productivity.

The present invention is not limited to each of the above-described embodiments, and for example, InP, GaP other than GaAs, III-
A crystal of a compound such as a group V, a group II-VI such as ZnSe or CdTe, or a ternary compound thereof, which is easily dissipated by dissociation of some of the constituent elements at high temperature during crystal growth is produced. Can be applied when

[0039]

As described above, according to the present invention, furnace cooling after crystallization is performed while locally forcibly cooling the vicinity of the reservoir. As a result, the temperature of the whole can be lowered while maintaining the lowest temperature in the vicinity of the reservoir, so that the high dissociation pressure component vaporized during the crystallization operation is recovered in the vicinity of the reservoir. As a result, the maintenance work in the furnace required before starting the next crystal growth operation is reduced, and the productivity can be improved.

[Brief description of drawings]

FIG. 1 is a schematic vertical sectional view showing a crystal manufacturing apparatus in an embodiment of the present invention.

FIG. 2 is a schematic vertical sectional view showing a crystal manufacturing apparatus in another embodiment of the present invention.

FIG. 3 is a vertical sectional view showing a conventional crystal manufacturing apparatus.

[Explanation of symbols]

1 Pressure vessel (furnace body) 3 Main heating heater (main heating means) 6 Airtight chamber 6a communication passage 8 reservoirs 10 crucible (raw material storage container) 11 Sub-heater (sub-heating means) 12 High dissociation pressure component 13 Cooling water piping (cooling means) 15 seed crystals 16 Raw material melt 17 single crystal

Front Page Continuation (72) Inventor Hiroshi Okada 1-5-5 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Prefecture Kobe Steel Works, Ltd. Kobe Research Institute (56) References JP 61-14199 (JP, A) ) JP-A-63-270379 (JP, A) JP-A-63-274684 (JP, A) JP-A-2-283690 (JP, A) JP-A-3-285886 (JP, A) JP-A-5- 70276 (JP, A) JP 5-24965 (JP, A) JP 5-117082 (JP, A) JP 7-330479 (JP, A) JP 8-319189 (JP, A) JP-A-8-268790 (JP, A) JP-A-8-283099 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) C30B 1/00-35/00

Claims (3)

(57) [Claims] 1. A vapor of a high dissociation pressure component around a raw material storage container, wherein a raw material storage container storing a raw material and a reservoir storing a high dissociation pressure component in a raw material constituent element are installed in a closed furnace body. A method for producing a crystal of a compound in which a raw material in a raw material container is once melted and then solidified to crystallize while heating the reservoir to a predetermined temperature to adjust the pressure. A method for producing a crystal of a compound, which comprises performing forced cooling. 2. A main heating means for heating a raw material for crystal growth contained in a raw material container in a closed furnace body, and a sub-heater for heating a high dissociation pressure component in the constituent elements of the raw material contained in a reservoir. An apparatus for producing a crystal of a compound, comprising heating means and cooling means for locally and forcibly cooling the vicinity of the reservoir. 3. A furnace body filled with an inert gas is further provided with an airtight chamber that surrounds the raw material storage container and the reservoir inside the main heating means.
3. The compound crystal production apparatus according to claim 2, wherein a communication passage that communicates the inside and the outside with each other is formed in a portion of the main heating means and the sub-heating means that is distant from the heating region.