CN117232259B - Sectional type samming heating furnace - Google Patents
Sectional type samming heating furnace Download PDFInfo
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- CN117232259B CN117232259B CN202311518127.8A CN202311518127A CN117232259B CN 117232259 B CN117232259 B CN 117232259B CN 202311518127 A CN202311518127 A CN 202311518127A CN 117232259 B CN117232259 B CN 117232259B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 171
- 238000006243 chemical reaction Methods 0.000 claims abstract description 111
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- 238000000034 method Methods 0.000 description 11
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- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
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Abstract
The invention provides a sectional type uniform temperature heating furnace, and belongs to the technical field of semiconductor manufacturing equipment. By adopting the split mounting type arrangement, each heating module can be produced in a modularized manner, on one hand, the preheating furnace can preheat the reaction gas, on the other hand, certain temperature compensation can be carried out on the low-temperature reaction zone, in the high-temperature furnace, the heating modules extend upwards from the base to the first heat insulation plate, and part of heating modules in the high-temperature furnace can carry out temperature compensation on the high-temperature reaction zone corresponding to the reaction kettle; in addition, the preheating furnace shell, the low-temperature furnace shell and the high-temperature furnace shell are respectively provided with a cooling channel, so that the problems of low efficiency or easiness in occurrence of cracks and the like of the existing cooling mode are solved.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing equipment, and particularly relates to a sectional type uniform temperature heating furnace.
Background
In recent years, the demand of semiconductor materials is increasing, and the third-generation semiconductor materials become key core materials for supporting the autonomous innovative development and transformation and upgrading of industries such as new-generation mobile communication, new energy automobiles, high-speed rail trains, energy Internet and the like, and become the focus of global semiconductor technology and industry competition. When the semiconductor material is prepared, a heating furnace is required to be used for temperature treatment; taking gallium nitride material as an example, in the preparation process of gallium nitride crystal material, two chemical reactions are required: the low temperature reaction and the high temperature reaction, and thus, the reaction chamber of the heating furnace for controlling the reaction thereof is correspondingly divided into a low temperature region and a high temperature region.
At present, the arrangement of the heating furnace is mainly divided into two modes of vertical type and horizontal type. For the vertical heating furnace, when carrying out production, need put into the heating furnace with reation kettle from top to bottom hoist and mount, at the in-process of hoist and mount, in order to avoid reation kettle to produce the collision to the heating furnace, in the reation kettle of being convenient for goes into the heating furnace simultaneously, the furnace chamber of heating furnace is generally round hole shape that link up from top to bottom, and its diameter is generally greater than reation kettle's external diameter, this just leads to reation kettle to be in between low temperature region and the high temperature region, form heat diffusion between temperature region and the external world easily, the temperature in the temperature region can not reach actual samming requirement. In addition, high quality of the crystalline material is a primary condition for manufacturing high quality components, in order to ensure the quality of the crystalline material, it is generally necessary to provide thermocouples for temperature monitoring at different positions in the temperature zone, and currently, in order to ensure the accuracy of temperature monitoring, thermocouples are distributed on the wall of the reaction kettle, in this process, it is necessary to perforate the heating furnace, and then send the thermocouples connected with the wires to corresponding positions on the reaction kettle through the perforations, because the thickness of the heating furnace is thicker, it is difficult to align the thermocouples to be sent and connected with the wires with corresponding installation positions on the reaction kettle, and the installation positions of the thermocouples are inaccurate. In addition, in the conventional heating furnace, only one heating unit such as a heating wire is arranged in the same temperature zone, and the regulation and control of the edge position of the temperature zone cannot be realized. The prior heating units are arranged on the inner wall of the heating furnace in an embedding way, and for the same material, generally, the higher the temperature is, the shorter the service life of the heating unit is, and when one of the heating units is damaged in the embedding way, the whole heating furnace is scrapped. In addition, the gallium nitride is required to be cooled after the reaction is finished, and because rapid cooling is easy to cause cracking of the gallium nitride during cooling, the existing production process is mostly carried out in a natural cooling mode, the cooling time is long, and the cost is increased virtually.
In view of the above problems of the prior art, there is a need for an improvement of the prior art, and the present invention has been made.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a sectional type uniform temperature heating furnace, which aims to solve at least one of the problems, so as to realize uniform temperature control to improve the production quality of semiconductor materials, and simultaneously facilitate maintenance and save cost.
In order to achieve the technical purpose, the invention adopts the following technical scheme:
the sectional type uniform temperature heating furnace at least comprises a preheating furnace, a low temperature furnace and a high temperature furnace which are sequentially arranged from top to bottom, wherein the low temperature furnace and the high temperature furnace are arranged at intervals through a first heat insulation plate, the preheating furnace and the low temperature furnace are arranged at intervals through a second heat insulation plate, the preheating furnace, the low temperature furnace and the high temperature furnace respectively correspond to each other and comprise a preheating furnace shell, a low temperature furnace shell and a high temperature furnace shell, a plurality of layers of heating modules which are mutually overlapped are respectively arranged in the preheating furnace, the low temperature furnace and the high temperature furnace, and the heating modules are arranged at intervals with the corresponding preheating furnace shells, low temperature furnace shells and high temperature furnace shells; the bottom of the high-temperature furnace shell is fixedly arranged on the base, a supporting table is arranged in the middle of the base, the top of the supporting table is used for fixedly mounting a reaction kettle for preparing semiconductor materials, the preheating furnace and the heating module in the low-temperature furnace are both arranged on the outer side of the reaction kettle in a surrounding mode, and the heating module in the high-temperature furnace is arranged on the outer sides of the supporting table and the reaction kettle in a surrounding mode; gaps are formed between the heating module and the supporting table as well as between the heating module and the reaction kettle; the first heat insulating plate and the second heat insulating plate are sleeved on the outer side of the reaction kettle, the inner sides of the first heat insulating plate and the second heat insulating plate are propped against the outer wall of the reaction kettle, and the heating module, the first heat insulating plate and the second heat insulating plate are formed by splicing a plurality of blocks arranged around the reaction kettle; the outside joint of first heat insulating board is between low temperature stove casing and high temperature stove casing, the outside joint of second heat insulating board is between preheating furnace casing and low temperature stove casing.
Compared with the prior art, the invention has at least the following beneficial effects:
the heating furnace is formed by sectional assembly, heating modules in the heating furnace are stacked in a layered and overlapped mode, fixation is realized by means of the fixing ring, and adjacent temperature areas are separated by the first heat insulation plate, the second heat insulation plate and the like, so that heat flow between the temperature areas is avoided; meanwhile, the heating module, the first heat insulating plate, the second heat insulating plate and the like are arranged in a blocking mode, so that the heating module, the first heat insulating plate and the second heat insulating plate can be spliced and stacked in sequence from bottom to top when being installed, and the problems that the heating module, the first heat insulating plate and the second heat insulating plate are easy to collide and difficult to hoist due to the fact that the heating module is hoisted and put from top to bottom are avoided; in the assembling process, each layer of sensor for detecting heat can be arranged according to the requirement, so that the problem of difficult installation when the thermocouple is installed in the prior art is avoided; in addition, form the cavity between heating module and the corresponding stove casing (preheating furnace casing, low temperature furnace casing, high Wen Luke body), on the one hand, can reduce the loss of heat, on the other hand can conveniently follow-up quick cooling, during the cooling down of follow-up, can pour into cryogenic nitrogen gas (normal atmospheric temperature or higher temperature) etc. into in this cavity, because cryogenic nitrogen gas is not direct acting on reation kettle into, consequently, this kind of cooling down is to pour into cryogenic gas into the reation kettle and cool down and need alleviate a lot for direct, can avoid because of quick cooling and local stress concentration cause the problem of semiconductor layer fracture on the substrate, and simultaneously, this kind of cooling down mode is more than conventional natural cooling down very fast, consequently, can guarantee the quality of semiconductor material under the circumstances of realizing quick cooling down. In addition, the preheating furnace provided by the invention has the advantages that on one hand, the preheating effect on the gas injected into the reaction kettle can be realized, and on the other hand, the reaction low-temperature area in the reaction kettle can be subjected to certain temperature compensation, so that the phenomenon that the temperature in the low-temperature area is uneven due to too fast heat dissipation at the upper edge of the low-temperature area is avoided; in the high-temperature furnace, the heating module upwards extends to the first heat insulation plate from the base, and the heating module located outside the supporting table can carry out temperature compensation on a high-temperature reaction temperature zone where the reaction kettle is located, so that temperature non-uniformity of the high-temperature zone at the edge of the lower part due to too fast heat dissipation is reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention. In the drawings:
FIG. 1 is a schematic diagram of a front view structure of a conventional heating furnace and a reaction kettle in cooperation;
FIG. 2 is a schematic diagram of the front view structure of the reaction vessel shown in FIG. 1;
FIG. 3 is a schematic diagram of a front view structure of a heating furnace and a reaction kettle in cooperation with each other;
FIG. 4 is a schematic cross-sectional view of a first heat shield used in the present invention;
FIG. 5 is a schematic top view of the first heat shield of FIG. 4;
FIG. 6 is an enlarged view of a portion of FIG. 3 at area A;
FIG. 7 is a schematic cross-sectional view of a first heat shield used in accordance with yet another preferred embodiment of the present invention;
FIG. 8 is a schematic diagram showing the stacked state of the heating units in the same temperature zone in the present invention;
FIG. 9 is a schematic view showing the division of the reaction kettle Wen Ouou in the heating furnace according to the invention;
FIG. 10 is a schematic top view of a retaining ring used in the present invention;
wherein 1-bottom plate, 2-mounting table, 3-first reaction furnace shell, 4-reaction kettle, 5-isolation layer, 6-connecting piece, 7-second reaction furnace shell, 8-heating unit, 9-thermocouple, 10-centering piece, 11-sealing cover, 12-annular gap, 13-base, 14-supporting table, 15-heating module, 16-fixed ring, 17-first heat insulation board, 18-second heat insulation board, 19-top cover, 20-preheating furnace shell, 21-low temperature furnace shell, 22-high temperature furnace shell, 23-first sensor, 24-second sensor, 25-wire,
151-first heating module, 152-second heating module, 1511-first heating unit, 1512-second heating unit, 1513-splice seam,
161-first securing portion, 162-second securing portion, 163-connecting portion, 164-lug, 165-cross plate,
171-first splice plate, 172-second splice plate, 173-splice structure, 1711-upper limit stage, 1712-lower limit stage, 1713-abutment face, 1714-wedge face, 1715-inner limit stage.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 3, the present invention provides a sectional type uniform temperature heating furnace, which at least comprises a preheating furnace, a low temperature furnace and a high temperature furnace which are sequentially arranged from top to bottom, wherein the low temperature furnace and the high temperature furnace are arranged at intervals through a first heat insulation plate 17, the preheating furnace and the low temperature furnace are arranged at intervals through a second heat insulation plate 18, the preheating furnace, the low temperature furnace and the high temperature furnace respectively and correspondingly comprise a preheating furnace shell 20, a low temperature furnace shell 21 and a high Wen Luke body 22, a plurality of layers of heating modules 15 (see fig. 3, stacked in the vertical direction) are respectively arranged in the preheating furnace, the low temperature furnace and the high temperature furnace, and the heating modules 15 are respectively arranged at intervals with the corresponding preheating furnace shell 20, the low temperature furnace shell 21 and the high temperature furnace shell 22 (see fig. 3, a cavity is formed between the heating modules 15 and the corresponding preheating furnace shell 20, the low temperature furnace shell 21 and the high Wen Luke body 22); the bottom of the high-temperature furnace shell 22 is fixedly arranged on the base 13, a supporting table 14 is arranged in the middle of the base 13, a reaction kettle 4 for preparing semiconductor materials (such as polycrystalline gallium nitride) is fixedly arranged at the top of the supporting table 14, the preheating furnace and the heating module 15 in the low-temperature furnace are all arranged on the outer side of the reaction kettle 4 in a surrounding mode, and the heating module 15 in the high-temperature furnace is arranged on the outer sides of the supporting table 14 and the reaction kettle 4 in a surrounding mode; gaps are formed between the heating module 15 and the supporting table 14 and between the heating module and the reaction kettle 4; the first heat insulation plate 17 and the second heat insulation plate 18 are both sleeved on the outer side of the reaction kettle 4, the inner sides (the inner side close to the central axis and the outer side far away from the central axis, which will not be described in detail later) of the first heat insulation plate 17 and the second heat insulation plate 18 are both propped against the outer wall of the reaction kettle 4, and the heating module 15, the first heat insulation plate 17 and the second heat insulation plate 18 are formed by splicing a plurality of blocks arranged around the reaction kettle 4; the outer side of the first heat insulating plate 17 is clamped between the low-temperature furnace shell 21 and the high Wen Luke body 22, and the outer side of the second heat insulating plate 18 is clamped between the preheating furnace shell 20 and the low-temperature furnace shell 21.
It should be noted that, in the preparation process of semiconductor materials such as gallium nitride, the furnace chamber of the existing vertical heating furnace is generally in a round hole shape penetrating up and down, when in production, the reaction kettle needs to be lifted and placed into the furnace chamber of the heating furnace from top to bottom, the diameter of the furnace chamber is generally much larger than the outer diameter of the reaction kettle in the reaction kettle, so that the reaction kettle can be conveniently placed into the furnace, the reaction kettle is prevented from colliding with the heating furnace, a larger annular gap is formed between the reaction kettle and the heating furnace shell outside the reaction kettle, and meanwhile, no barrier exists between the temperature areas, namely, the annular gap penetrates up and down, so that heat diffusion is easily formed between the reaction kettle and the high temperature area, the temperature in the same temperature area and the outside, the temperature in the same temperature area cannot be ensured to be constant, the phenomenon that the temperature difference in the same temperature area is larger is more obvious for the large reaction kettle and the heating furnace, and the lifting is also more difficult. Referring to fig. 1 to 2, which show a schematic structural diagram of a typical prior heating furnace and a reaction kettle, in fig. 1, the prior heating furnace generally includes a bottom plate 1, a mounting table 2 is disposed in the middle of the bottom plate 1, a reaction kettle 4 is fixedly disposed at the top of the mounting table 2, a first reaction furnace housing 3, an isolation layer 5 and a second reaction furnace housing 7 are sequentially sleeved on the outer sides of the mounting table 2 and the reaction kettle 4 from bottom to top at intervals, wherein the first reaction furnace housing 3 and the second reaction furnace housing 7 form a fixed connection through a connecting piece 6, the isolation layer 5 is limited between the first reaction furnace housing 3 and the second reaction furnace housing 7, heating units 8 are embedded on inner walls of the first reaction furnace housing 3 and the second reaction furnace housing 7, and a centralizing member 10 and a sealing cover 11 are further disposed at the top in the second reaction furnace housing 7. As can be seen from fig. 1, in the whole heating furnace, the gaps between the reaction kettle 4 and the first reaction furnace shell 3 and between the reaction kettle and the second reaction furnace shell 7 are annular gaps 12 which are communicated with each other, so that when heating is performed, heat exchange occurs between a low-temperature region in the first reaction furnace shell 3 and a high-temperature region in the second reaction furnace shell 7, thereby causing uneven and unstable temperature in each temperature region, for example, when gallium nitride grows, the low-temperature region is generally controlled to be a constant temperature region of 500-600 ℃, the high-temperature region is generally controlled to be a constant temperature region of 650-700 ℃, but in actual production, the bottom of the low-temperature region is conducted by the annular gap 12, therefore, the bottom temperature of the low-temperature region is possibly above 600 ℃, and the top of the high-temperature region is possibly below 650 ℃, and during actual production, the supply of a gas source for reaction is changed, which causes uneven temperature in the same temperature region, thus causing larger fluctuation of the temperature in the same temperature region and great influence on the growth rate of crystals and great influence on the growth rate of the crystal; similarly, there is a diffusion of heat at the top of the low temperature zone and at the bottom of the high temperature zone, and the temperature in the temperature zone cannot be accurately controlled within a predetermined constant temperature zone.
One of the differences between the present invention and the existing heating furnace is that in the present invention, the heating modules 15 disposed in the preheating furnace, the low temperature furnace and the high temperature furnace are disposed in a manner that a plurality of layers are disposed on top of each other, respectively, and each layer of heating modules 15 is individually controllable, as exemplified in fig. 3, which shows that three layers of heating modules 15 are disposed in the low temperature furnace housing 21, such that the temperature of each of the three layers of heating modules 15 is individually controllable when the actual production is performed, for example, the temperature of the heating module 15 disposed in the top layer (in the low temperature furnace housing 21) is controlled to 600 ℃ or more, the temperature of the heating module 15 disposed in the bottom layer is controlled to 500 ℃ or less, and the temperature of the heating module 15 disposed in the middle layer is controlled to about 550 ℃, so that when the heating module 15 disposed in the top layer is affected by the temperature of the corresponding reaction kettle, a temperature buffer balance is formed in a predetermined temperature range, for example, the temperature of the heating module 15 disposed in the bottom layer is controlled to be about 580 ℃, and the temperature of the heating module disposed in the bottom layer can be controlled to a predetermined temperature range. It should be further noted that, under the technical concept of the present invention, the number of layers of the heating module 15 may be adjustable, and obviously, there may be more layers, so that the temperature control in the corresponding temperature region may be finer, for example, the temperature in the whole low temperature region may be controlled to be constant within the range of 550-600 ℃, and even the whole low temperature region may be maintained at about 575 ℃. In addition, the arrangement of the first heat insulating plate 17 and the second heat insulating plate 18 can form a barrier between different temperature areas, can reduce the diffusion of heat between the different temperature areas, and can accurately control the temperature in the temperature areas within a required range by combining the independent control of the heating module 15. The temperature values are merely examples, and are not actually set, and the actual temperature may be adaptively adjusted as needed.
It should be further noted that, the heating module 15, the first heat insulating plate 17 and the second heat insulating plate 18 of the present invention are formed by splicing a plurality of blocks disposed around the reaction kettle 4. By such an arrangement, the reactor of the present invention may not be preformed, i.e. assembled only when production is required. Referring to fig. 3 for an exemplary assembly method, before the production, the reaction kettle 4 is first installed on the supporting table 14 disposed in the middle of the base 13, and then the heating modules 15 are sequentially stacked from bottom to top, for example, the first heating module 151 and the second heating module 152 … … are layered in the up-down direction as shown in fig. 8, and each layer of the heating modules 15 includes a plurality of blocks, for example, the first heating module 151 includes a first heating unit 1511 and a second heating unit 1512 (i.e., two blocks) which are separately disposed, and after stacking for a certain period, the high Wen Luke body 22 is installed, and then the first heat insulation board 17 is installed, thereby completing the installation of the high temperature furnace; then, stacking the heating modules 15 on the top of the first heat insulation plate 17 from bottom to top in sequence, after stacking for a certain period, installing the low-temperature furnace shell 21, and then installing the second heat insulation plate 18 to finish the installation of the low-temperature furnace; next, the heating modules 15 are stacked in order from bottom to top on top of the second heat insulating plate 18, and after a certain period of stacking, the preheating furnace housing 20 is installed, and then the top cover 19 is installed, thereby completing the installation of the preheating furnace. The reactor 4 is arranged in the heating furnace in a stacking way, so that the problems that the reactor 4 is easy to collide with, the annular gap 12 between the reactor 4 and the first reactor shell 3 and between the reactor 4 and the second reactor shell 7 are in the same conduction, heat diffusion is easy to occur due to overlarge gap and the like in the prior art can be avoided. In addition, the heating module 15 and the corresponding furnace shell (preheating furnace shell, low-temperature furnace shell and high Wen Luke body) form a cavity, the heating modules 15 are stacked and independently perform temperature control, when one of the heating modules 15 is damaged, the corresponding heating modules only need to be replaced later, so that the maintenance is convenient.
Preferably, as shown in fig. 8, each layer of heating module 15 is formed by splicing a plurality of blocks, for example, the first heating module 151 shown in fig. 8 is formed by splicing a first heating unit 1511 and a second heating unit 1512 which are separately arranged, and a splicing seam 1513 is formed between each two blocks, so that when the heating modules 15 are stacked, the splicing seams 1513 on two adjacent layers of heating modules 15 are staggered, and the influence of the splicing seam on the temperature balance can be reduced to a certain extent.
As a preferred embodiment, in this embodiment, two adjacent layers of heating modules 15 stacked up and down are clamped and fixed by a fixing ring 16 circumferentially surrounding the heating modules 15, the fixing ring 16 includes a first fixing portion 161 and a second fixing portion 162 circumferentially spaced apart from each other, the first fixing portion 161 and the second fixing portion 162 are detachably connected by a connecting portion 163, wherein the first fixing portion 161 and the second fixing portion 162 are preferably identical in structure (see fig. 10, the first fixing portion 161 rotates 180 ° around the center position to obtain the second fixing portion 162), the first fixing portion 161 and the second fixing portion 162 are each in a structure of a transverse plate 165 circumferentially arranged, lugs 164 symmetrically arranged on the upper side and the lower side of the transverse plate 165 in the vertical direction are formed on the outer edges of the transverse plate 165, the lugs 164 and the transverse plate 165 form a T-shaped cross section, the transverse plate 165 is arranged between the two layers of heating modules 15, and the first fixing portion 161 and the second fixing portion 162 are arranged on the upper side and the lower side of the transverse plate 165 in a height of at least one of two layers 15 corresponding to the height of the two layers 15. Through the setting of solid fixed ring 16, each layer heating module 15 can be stable be restricted in the outside of reation kettle 4, simultaneously, the outside of heating module 15 is not covered by lug 164 completely, like this, can conveniently install the sensor in the outside of heating module 15 in order to carry out the monitoring of temperature isoparametric to the outside of heating module 15, the benefit of setting like this will be described in detail below, and this is not repeated here. Preferably, the connection portion 163 adopts a screw structure with an elastic member such as a spring, and the elastic member such as a spring is sleeved on the screw structure, so that a certain expansion and contraction adjustment property is provided between the first fixing portion 161 and the second fixing portion 162.
It should be further noted that, as shown in fig. 3, a certain gap still exists between the heating module 15 and the reaction kettle 4, but the gap is much smaller than the annular gap 12 existing in the prior art to meet the requirement of lifting, and the heat diffusion in the temperature range can be well prevented due to the heat blocking effect of the first heat insulating plate 17 and the second heat insulating plate 18, so that a certain gap is reserved between the heating module 15 and the reaction kettle 4, mainly for ensuring that the heating module 15 uniformly heats the reaction kettle 4. Because the heating module 15 is assembled and stacked to surround the outside of the reaction kettle 4 after the reaction kettle 4 is installed, the heating module 15 is usually an electric heating wire, an electric heating rod or an electric heating block, and the like, if the heating module 15 is in a laminating type arrangement, the heating module 15 cannot be well laminated with the reaction kettle 4 in actual installation due to the reasons of processing precision and the like, so that the heating module 15 cannot uniformly heat the reaction kettle 4 in the circumferential direction easily; the heating mode is similar to that of a common household oven, and the heating rod is not directly used for contact heating in the oven, but is used for diffusing heat for heating.
As a preferred embodiment, the inner diameter of the fixing ring 16 (the inner diameter of the cross plate 165) is larger than the inner diameter of the heating module 15 in the horizontal direction. By this arrangement, the cross plate 165 of the fixing ring 16 is prevented from forming a heat blocking effect on the heating modules 15 in the same temperature region, and continuous stability of the temperature in the same temperature region is ensured.
Still preferably, each fixing ring 16 is embedded with a wire 25, the wire 25 is connected with a first sensor 23 and a second sensor 24, the first sensor 23 is distributed on the reaction kettle 4 and the supporting table 14, the second sensor 24 is distributed on a lug 164 (close to the heating module 15) of the fixing ring 16, the first sensor 23 and the second sensor 24 are arranged in layers in the vertical direction, the first sensor 23 and the second sensor 24 of each layer are substantially on the same horizontal plane with the corresponding fixing ring 16, the first sensor 23 and the second sensor 24 are uniformly distributed in the circumferential direction, and the first sensor 23 and the second sensor 24 are used for collecting temperature data at corresponding positions; the preheating furnace housing 20, the low-temperature furnace housing 21 and the high Wen Luke body 22 are respectively provided with a wire penetrating structure for penetrating the wire 25 and a cooling channel (not shown in the figure) for entering cooling gas. When the heating module 15 is stacked, the first sensor 23, the second sensor 24 and the lead wire 25 can be sequentially arranged along with the stacking process, so that the problem of difficult thermocouple installation in the prior art is avoided; in addition, through the arrangement, the invention has at least the following advantages: in the reaction stage of production, the first sensor 23 reflects the temperature of the reaction kettle 4 and the support table 14, the second sensor 24 reflects the real heating temperature of the corresponding heating module 15, referring to fig. 3, the first sensor 23 is arranged on the reaction kettle 4 and the support table 14, since the reaction gas is continuously filled in the reaction kettle 4 in the production stage, the difference exists between the temperature of the reaction kettle 4 and the support table 14 (the preferred exhaust gas discharging channel is arranged on the support table 14, not shown in the drawing) and the real heating temperature of the heating module 15 at the corresponding position, the temperature difference at the corresponding position can be detected through the arrangement of the first sensor 23 and the second sensor 24, the temperature difference generally only detects the temperature of the reaction kettle, when the temperature is lower, the heating temperature of the heating unit 8 needs to be regulated, but the specific regulation is higher, the difference cannot be known, the temperature difference can be easily detected through the continuous temperature detection at the position of the support table 14, or the temperature difference can be accurately regulated through the fact that the temperature difference is more quickly and the temperature difference is more accurately regulated, and the temperature difference can be more accurately regulated through the temperature difference of the sensor 24, and the temperature difference can be more accurately regulated through the temperature regulation of the sensor 24. In addition, another important reason for arranging the first sensor 23 and the second sensor 24 is that in the cooling stage, the cooling fluid such as nitrogen gas can be injected through the cooling channel on the corresponding furnace shell, the injected cooling fluid acts in the cavity between the heating module 15 and the corresponding furnace shell and gradually acts on the reaction kettle 4 due to the heat transfer effect, in the process, a temperature difference exists between the first sensor 23 and the second sensor 24, and the temperature difference is reasonably controlled, so that the stable cooling in the reaction kettle 4 can be controlled, the cooling speed is greatly improved compared with the natural cooling mode in the prior art, and the situation that the semiconductor material is cracked due to rapid temperature change is not caused because the cooling fluid does not directly act on the generated semiconductor material; in addition, the heating module 15 extends upwards from the base 13 to the first heat insulation plate 17, and the heating module 15 positioned outside the supporting table 14 can perform temperature compensation on a high-temperature reaction temperature zone where the reaction kettle 4 is positioned, so that uneven temperature of the high-temperature zone at the lower edge due to too fast heat dissipation is reduced, and the temperature equalization requirement of the reaction zone at the reaction kettle is realized. The first sensor 23 and the second sensor 24 may be selected from thermocouple temperature sensors or thermal resistance temperature sensors, and they may be contact temperature sensors or non-contact temperature sensors; because the first sensor 23 and the second sensor 24 are arranged in a layered manner in the vertical direction, as shown in fig. 3, the first sensor 23 and the second sensor 24 are arranged between two layers of heating modules 15 which are adjacent to each other up and down, and therefore, the first sensor 23 and the second sensor 24 can be correspondingly increased or decreased along with the change of parameters such as the length of the reaction kettle, the thickness of the heating modules 15 and the like; it will be understood, of course, that the first sensor 23 and the second sensor 24 may be arranged at intervals of one or more layers of the heating modules 15, i.e. it is not required that the first sensor 23 and the second sensor 24 for temperature measurement be arranged between two adjacent layers of the heating modules 15, and may be adjusted according to actual needs.
In addition, it is understood that the preheating furnace housing 20, the low temperature furnace housing 21, and the high temperature furnace housing 22 are all made of uninsulated materials.
For better achieving the object of the present invention, referring to fig. 4 to 9, the first heat insulation board 17 of the present invention preferably includes a first splice plate 171 and a second splice plate 172, the first splice plate 171 and the second splice plate 172 are spliced by a splicing structure 173, the first splice plate 171 and the second splice plate 172 are each of a semi-annular structure as a whole (referring to fig. 5), upper limit tables 1711 are provided on top surfaces of the first splice plate 171 and the second splice plate 172, lower limit tables 1712 are provided on bottom surfaces of the first splice plate 171 and the second splice plate 172, position limitation of the corresponding heating module 15 is achieved by the arrangement of the upper limit tables 1711 and the lower limit tables 1712 (similar to the effect of lugs 164 on the fixing ring 16), and inner sides of the first splice plate 171 and the second splice plate 172 are formed as abutment surfaces 1713 for abutting on the outside of the reaction kettle 4.
Preferably, a mounting groove for mounting the first heat insulation plate 17 is provided at the upper part of the high temperature furnace housing 22, the mounting groove is an annular groove, and the mounting groove is provided with a necking, that is, the inner diameters of the mounting groove are gradually reduced from top to bottom, the outer sides of the first splice plate 171 and the second splice plate 172 are formed into wedge surfaces 1714, the wedge surfaces 1714 are consistent with the necking directions of the mounting groove, an included angle alpha is formed between the wedge surfaces 1714 and the vertical direction, and the first splice plate 171 and the second splice plate 172 act on the necking of the mounting groove through the wedge surfaces 1714. By such arrangement, during assembly, the first heat insulating plate 17 and the second heat insulating plate 18 can be firmly fixed in the corresponding mounting grooves by pressing the wedge surface 1714, so that the heat insulating effect can be ensured, for example, as shown in fig. 3, when the first heat insulating plate 17 is mounted in the mounting groove of the high Wen Luke body 22, the lower temperature furnace shell 21 is continuously mounted above the mounting groove, the bottom of the lower temperature furnace shell 21 is abutted against the upper surface of the first heat insulating plate 17, during the fixing process of the lower temperature furnace shell 21, the lower temperature furnace shell 21 presses the first heat insulating plate 17 downwards, so that the first splice plate 171 and the second splice plate 172 press the shrinkage mouth of the mounting groove through the wedge surface 1714, and the first splice plate 171 and the second splice plate 172 correspondingly press the reaction kettle 4 through the abutting surface 1713, thereby forming a good heat insulating effect between temperature areas.
Preferably, the splicing structure 173 is spliced by means of clamping the groove and the bump. Compared with the mode of directly adopting planar splicing, the sealing effect of the first splice plate 171 and the second splice plate 172 at the splicing position can be improved through the mode of clamping the grooves and the convex blocks, and then the heat insulation effect is improved.
Preferably, the second heat shield 18 has the same structure as the first heat shield 17.
In a preferred embodiment, all the heating modules 15 in the preheating furnace, the low-temperature furnace and the high-temperature furnace are identical and are formed by splicing two symmetrical semi-annular heating units, namely a first heating unit 1511 and a second heating unit 1512. Like this, in the whole heating furnace, heating module 15 shape is unified, can conveniently assemble, can be suitable for same type heating module 15 to the reation kettle 4 that the diameter is the same but different length, and convenient processing management.
It should be noted that, in the reaction vessel 4 of the present invention, a reaction vessel of japanese patent application publication No. CN110475914a developed by the company japan is preferably used, and the main body is cylindrical, but the top cover, the clamp, etc. are required to be provided at the top to seal the reaction vessel, so that the diameter of the top cover structure is often much larger than the diameter of the cylinder below, as shown in fig. 3 of the present invention, for this purpose, it is preferable that the second heat insulating plate 18 is provided below the top cover structure of the reaction vessel 4, and the structure of the second heat insulating plate 18 is different from that of the first heat insulating plate 17 in that the inner diameter and the outer diameter of the upper limit stage 1711 and the lower limit stage 1712 of the first heat insulating plate 17 are both equal in the radial direction, and the inner diameter and the outer diameter of the upper limit stage and the lower limit stage of the second heat insulating plate 18 are both unequal in the radial direction, so that the gap between the heating module 15 in the preheating furnace and the top cover structure of the reaction vessel 4 and the gap between the heating module 15 in the low-temperature furnace and the cylinder of the reaction vessel 4 are substantially equal after the same heating module 15 is installed.
Preferably, in order to control the gap between the heating module 15 and the reaction kettle 4 at the corresponding position, the first heat insulating plate 17 and the second heat insulating plate 18 are further provided with an inner ring stopper 1715 (see fig. 7) at a position close to the reaction kettle 4.
Further preferably, since the positions of the reaction kettle 4 corresponding to the low temperature area and the high temperature area are two positions where the subsequent reaction needs to be performed, in order to avoid the mutual diffusion of the heat in the low temperature area and the heat in the high temperature area as far as possible, the invention is further provided with the first sensors 23 on the surfaces of the upper side and the lower side of the first heat insulation plate 17 (on the basis of the arrangement of the first sensors 23 through the fixing rings 16, the positions are additionally arranged on the upper surface and the lower surface of the first heat insulation plate 17), so that the temperature monitoring at the corresponding positions is performed more accurately.
Finally, it is further noted that relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to the embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. The sectional type uniform temperature heating furnace at least comprises a preheating furnace, a low temperature furnace and a high temperature furnace which are sequentially arranged from top to bottom, and is characterized in that the preheating furnace and the high temperature furnace are arranged at intervals through a first heat insulation plate (17), the preheating furnace and the low temperature furnace are arranged at intervals through a second heat insulation plate (18), the preheating furnace, the low temperature furnace and the high temperature furnace respectively correspond to each other and comprise a preheating furnace shell (20), a low temperature furnace shell (21) and a high temperature furnace shell (22), a plurality of layers of heating modules (15) which are mutually overlapped are respectively arranged in the preheating furnace, the low temperature furnace and the high temperature furnace, and the heating modules (15) are respectively arranged at intervals with the corresponding preheating furnace shells (20), low temperature furnace shells (21) and high temperature furnace shells (22); the bottom of the high-temperature furnace shell (22) is fixedly arranged on the base (13), a supporting table (14) is arranged in the middle of the base (13), a reaction kettle (4) for preparing semiconductor materials is fixedly arranged at the top of the supporting table (14), the preheating furnace and the heating module (15) in the low-temperature furnace are both arranged on the outer side of the reaction kettle (4) in a surrounding mode, and the heating module (15) in the high-temperature furnace is arranged on the outer sides of the supporting table (14) and the reaction kettle (4) in a surrounding mode; gaps are formed between the heating module (15) and the supporting table (14) and between the heating module and the reaction kettle (4); the first heat insulation plate (17) and the second heat insulation plate (18) are sleeved on the outer side of the reaction kettle (4), the inner sides of the first heat insulation plate (17) and the second heat insulation plate (18) are propped against the outer wall of the reaction kettle (4), and the heating module (15), the first heat insulation plate (17) and the second heat insulation plate (18) are formed by splicing a plurality of blocks arranged around the reaction kettle (4); the outer side of the first heat insulation plate (17) is clamped between the low-temperature furnace shell (21) and the high-temperature furnace shell (22), and the outer side of the second heat insulation plate (18) is clamped between the preheating furnace shell (20) and the low-temperature furnace shell (21).
2. A sectional type soaking furnace according to claim 1, wherein each layer of heating modules (15) is formed by splicing a plurality of blocks, and splice joints (1513) are formed between the blocks, and when the heating modules (15) are stacked, the splice joints (1513) on two adjacent layers of heating modules (15) are staggered.
3. A sectional type soaking furnace according to claim 1, wherein two adjacent layers of heating modules (15) stacked on each other are clamped and fixed by a fixing ring (16) circumferentially surrounding the heating modules (15), the fixing ring (16) comprises a first fixing part (161) and a second fixing part (162) circumferentially arranged separately from each other, the first fixing part (161) and the second fixing part (162) are formed in a detachable connection circumferentially by a connecting part (163), wherein the first fixing part (161) and the second fixing part (162) have the same structure, the first fixing part (161) and the second fixing part (162) are both in a structure of a transverse plate (165) circumferentially arranged, lugs (164) symmetrically arranged on the upper side and the lower side of the transverse plate (165) in the vertical direction are formed on the outer edges of the transverse plate (165) of the first fixing part (161) and the second fixing part (162), the lugs (164) and the transverse plate (165) form a T-shaped cross section, the two adjacent layers of the transverse plate (165) are arranged on the upper side and the lower side of the heating module (15) and the lower side of the two adjacent layers (15) are respectively arranged around the two layers (165), the height of the single-sided lugs (164) is at least less than 1/2 of the height of the corresponding heating module (15).
4. A sectional type soaking furnace according to claim 1, wherein a gap exists between the heating module (15) and the reaction vessel (4).
5. A sectional type soaking furnace according to claim 3, characterized in that each fixing ring (16) is embedded with a wire (25), the wires (25) are connected with a first sensor (23) and a second sensor (24), the first sensor (23) is distributed on the reaction kettle (4) and the supporting table (14), the second sensor (24) is distributed on the lugs (164) of the corresponding fixing ring (16), the first sensor (23) and the second sensor (24) are arranged in a layered manner in the vertical direction, the first sensor (23) and the second sensor (24) of each layer are arranged on the same horizontal plane with the corresponding fixing ring (16), the first sensor (23) and the second sensor (24) are distributed on the circumference direction, and the first sensor (23) and the second sensor (24) are used for collecting temperature data at the corresponding positions.
6. A sectional type soaking furnace according to claim 5, wherein the preheating furnace housing (20), the low temperature furnace housing (21) and the high temperature furnace housing (22) are respectively provided with a wire passing-out structure for passing out the wire (25) and a cooling passage for entering cooling gas.
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