JPH0927572A - Manufacture of lightweight substrate for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the manufacturing method of a lightweight substrate, for a semiconductor device, which is light in weight and which can deal sufficiently with high integration and large electric power. SOLUTION: A heat sink plate material A which is composed of Al or of an Al alloy is laminated on one face of an insulating plate material C which is composed of an aluminum oxide sintered body so as to sandwich an A(-Si- based alloy or Al-Ge-based alloy brazing material D. In addition, a thin plate material B, for circuit formation, which is composed of Al or an Al alloy is laminated on the other face of the insulating plate material C which is composed of the aluminum oxide sintered body so as to sandwich an Al-Si-based alloy or Al-Ge-based alloy brazing material D. Thereby, a laminated body is manufactured. Then, the laminated body is heated to the melting temperature of the brazing materials, and a laminated and bonded body is manufactured. Then, a Cu- or Ni-plated layer is formed in a prescribed part or in the whole face on the surface of the thin plate material B, for circuit formation, of the laminated and bonded body.

Description

Detailed Description of the Invention

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a method of manufacturing a substrate which is light in weight and can sufficiently cope with high integration and high power of a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a substrate for a semiconductor device is generally manufactured.
To do so, for example, as shown in the schematic explanatory diagram of FIG.
Aluminum oxide (Al_TwoO_ThreeFrom the sintered body
On both sides of the insulating plate material C ′
The liquid phase joining is performed, for example, by the Cu thin plate material
Copper oxide (Cu_TwoO), and the above A
l _TwoO_ThreeIn a state of being superimposed on a sintered insulating plate material, 106
After heating to 5 to 1085 ° C, the Cu_TwoO and Cu
And a liquid phase is generated and combined with
Among the Cu thin plate materials, one side of the insulating plate material C'is
The other side is a heat sink plate A '.
It is for soldering with
Solder made of Pb-Sn alloy (generally 450 ° C or less
That has a melting point of
It is known that it is joined to a heat sink plate material A 'made of
Have been.

[0003]

However, with the recent trend toward higher integration and higher power of semiconductor devices, the devices themselves tend to be larger and heavier, and therefore the weight of the members constituting the devices has been reduced. Although strongly desired, in the semiconductor device substrate obtained by the above-mentioned conventional method, both the heat sink plate material A 'and the thin plate material B' constituting the substrate are made of heavy C
At present, it is impossible to meet these demands because a heavy Pb-Sn alloy solder material D 'is added to this.

[0004]

Means for Solving the Problems Accordingly, the present inventors have
From the above viewpoints, research was conducted to develop a method of manufacturing a lightweight semiconductor device substrate. As a result, heat sink plate materials and thin plate materials were converted to pure Al or, for example, Al-2.5% M.
constituted by an Al alloy, such as g-0.2% Cr alloy and Al-1% Mn alloys, which on both sides of the insulating plate made of Al ₂ O ₃ sintered body, Al-13% Si alloy, Al-7 .5
Al-S, such as Al-Si alloys, Al-9.5% Si-1% Mg alloys, and Al-7.5% Si-10% Ge alloys
A laminate is manufactured by laminating a brazing material (more than weight%) made of an Al-Ge alloy such as an i-based alloy or an Al-15% Ge alloy, and the laminate is melted at a brazing material melting temperature. When a Cu or Ni plating layer is formed on a predetermined portion or the entire surface of the thin plate material for circuit formation and component soldering, all the components are made of lightweight Al and Al alloy and Al alloy. _Since it is composed of ₂ O ₃ , it has been found that a lightweight substrate can be obtained.

The present invention has been made based on the above findings, and as shown in the schematic explanatory diagram of FIG. With the insulating plate material C made of Al ₂ O ₃ sintered body sandwiched from both sides.
A brazing material D of a Si-based alloy or an Al-Ge-based alloy is laminated so as to be sandwiched to manufacture a laminated body, and the laminated body is heated to a brazing material melting temperature to manufacture a laminated joined body, and then the circuit formation is performed. The present invention is characterized by a method for manufacturing a lightweight substrate for a semiconductor device, in which a Cu or Ni plating layer is formed on a predetermined portion or the entire surface of the thin plate material for use B.

[0006]

Next, a method for manufacturing a semiconductor device substrate according to the present invention will be specifically described with reference to examples.

[0007] Width: 50 mm × thickness 0.63 mm × length: 75
Insulating plate material C made of 96% Al ₂ O ₃ sintered body, each having the dimensions shown in Table 1 and consisting of Al or Al alloy having the composition shown in Table 1, and having dimensions of width: 50 mm × thickness:
Heat sink plate material A of 3 mm × length: 75 mm, thin plate material B of width: 45 mm × thickness: 1 mm × length: 70 mm, and aluminum having the composition shown in Table 1 and a thickness of 50 μm -Si alloy and Al-Ge alloy are prepared respectively, and then they are stacked in the state shown in FIG. 1, and in this state, 430-610
The brazing material was brazed to a temperature suitable for the melting temperature of the brazing material within the range of 10 ° C. for 10 minutes to form a laminated joined body. Heat treatment is performed, and subsequently, a Cu or Ni plating layer having a thickness of 0.5 μm is formed on the entire surface of the thin plate material B constituting the laminated joined body by a usual electroless plating method. To 6 were performed respectively.

For the purpose of comparison, as shown in FIG. 2, the same insulating plate material C is used as an insulating plate material C ', and width: 45 mm × thickness: 0.3 mm × length from both sides thereof. Length: Oxygen-free copper sheet material B '(2 pieces) with dimensions of 70 mm
In this state, the layers were heated in an Ar atmosphere containing 1% by volume of oxygen at a temperature of 1075 ° C. for 50 minutes, and Cu ₂ O formed on the surface in this oxidizing atmosphere and the base material were heated. A liquid phase due to the eutectic with Cu is generated on the bonding surface and bonded. Then, the bonded body is formed to have a thickness of 300 μm.
Using a solder material D 'made of a Pb-60% Sn alloy as a foil material of m, width: 50 mm × thickness: 3 mm × length: 75 mm
Heat sink plate material A 'made of oxygen-free copper having the following dimensions:
The conventional method was implemented by soldering to one side of the.

Then, the semiconductor device substrates obtained by the methods 1 to 6 of the present invention and the conventional method are repeatedly heated at a temperature of 125 ° C. and then cooled to −55 ° C. in one cycle, and the insulating plate material is obtained. Observe and measure the number of cycles up to the occurrence of cracks every 20 cycles, measure the weight of the substrate for a semiconductor device, set the weight of the substrate obtained by the conventional method to 1, and determine the relative ratio to this. I asked. The results are shown in Table 1.

[0010]

[Table 1]

[0011]

According to the results shown in Table 1, the methods 1 to 5 of the present invention are shown.
In any of the substrates for semiconductor devices obtained in step 6, cracks were not found in the insulating plate even after repeated heating and cooling under severe conditions. The cracks occur relatively early in the insulating plate due to the large difference in thermal expansion coefficient between the Al ₂ O ₃ sintered body and Cu and the yield stress of Cu larger than Al. The substrate for a semiconductor device obtained in No. 6 showed a weight reduction of about 64% as compared with the substrate obtained by the conventional method, and it is clear that the weight reduction is remarkable.

As described above, the substrate for a semiconductor device obtained by the manufacturing method of the present invention is lightweight, so that it can sufficiently cope with high integration and high power of the semiconductor device, and under severe conditions. In practical use, the ceramic insulating plate material has industrially useful effects, such as having no defects such as cracks and having extremely high reliability.

[Brief description of drawings]

FIG. 1 is a schematic explanatory view showing a method for manufacturing a semiconductor device substrate of the present invention.

FIG. 2 is a schematic explanatory view showing a conventional method for manufacturing a substrate for a semiconductor device.

[Explanation of symbols]

 A, A 'heat sink plate, B, B' thin plate, C, C 'insulating plate, D brazing material, D' soldering material

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshio Kanda 1-297 Kitabukuro-cho, Omiya-shi, Saitama Mitsubishi Materials Co., Ltd.

Claims (1)

[Claims] A heat sink plate made of Al or an Al alloy is laminated on one surface of an insulating plate made of an aluminum oxide sintered body with an Al-Si alloy or an Al-Ge alloy brazing material interposed therebetween, and the oxidization is further performed. A circuit-forming thin plate made of Al or an Al alloy is formed on the other surface of an insulating plate made of an aluminum sintered body with an Al-Si alloy or Al
A laminated body is manufactured by laminating the Ge-based alloy brazing material therebetween, and the laminated body is heated to the melting temperature of the brazing material to produce a laminated joined body. A method for manufacturing a lightweight substrate for a semiconductor device, comprising forming a Cu or Ni plating layer on a predetermined portion or the entire surface.