JPH09266182A - Dicing device and its method - Google Patents

Dicing device and its method

Info

Publication number
JPH09266182A
JPH09266182A JP8076095A JP7609596A JPH09266182A JP H09266182 A JPH09266182 A JP H09266182A JP 8076095 A JP8076095 A JP 8076095A JP 7609596 A JP7609596 A JP 7609596A JP H09266182 A JPH09266182 A JP H09266182A
Authority
JP
Japan
Prior art keywords
adhesive sheet
adhesive
chips
semiconductor wafer
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8076095A
Other languages
Japanese (ja)
Inventor
Toshiaki Shirouchi
俊昭 城内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP8076095A priority Critical patent/JPH09266182A/en
Publication of JPH09266182A publication Critical patent/JPH09266182A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To cut and separate a semiconductor wafer into individual semiconductor chips, eliminating scraps which have adverse influence on the quality in after process, in the case of dividing and separating the semiconductor wafer into individual semiconductor chips by cutting it. SOLUTION: In the case of having provided a dicing device with a sheet expansion part 3, which spreads an adhesive sheet 11 for widening the intervals between the semiconductor chips 12 cut and separated from the semiconductor wafer 10 stuck to the adhesive sheet 11, and an ultraviolet ray irradiation part 1, which drops the adhesive capacity of the adhesive agent of the adhesive sheet 11 spreaded, the intervals between the fellow semiconductor chips 12 on the adhesive sheet 11 are widened, and scraps are exposed among them. Together with it, the adhesive force to the scraps is dropped, and then the scraps are removed by the jet force of cleaning water.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体ウェハを個
々の半導体チップに切断分離するダイシング装置および
その方法に関し、特に、一面に粘着力を有する粘着シー
トに半導体ウェハを貼付けた状態でブレードを完全に切
込ませ半導体チップに切断分離するダイシング装置およ
びその方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dicing apparatus and a method for cutting and separating a semiconductor wafer into individual semiconductor chips, and more particularly to a dicing apparatus in which a semiconductor wafer is attached to an adhesive sheet having an adhesive force on one surface and a blade is completely attached to the adhesive sheet. The present invention relates to a dicing device and a method for cutting the semiconductor chip into semiconductor chips.

【0002】[0002]

【従来の技術】通常、半導体ウェハを切断分割し半導体
チップに分割するには、ダイシング装置と呼ばれる高速
回転するブレードと半導体ウェハを載置しブレードに対
し相対的に移動し半導体ウェハを切断するステージとを
備えるダイシング装置を使用して行なわれていた。ま
た、このダイシング装置では、粘着シートに半導体ウェ
ハを貼付けた状態でステージに載置し、回転するブレー
ドを半導体ウェハに完全に切込ませて切断していた。そ
して、欠けがなく効率良く切断できるとともに切断時の
切屑が半導体チップに付着することなく排除できること
が重要な課題であった。
2. Description of the Related Art Generally, in order to cut and divide a semiconductor wafer into semiconductor chips, a blade called a dicing device and a stage on which a semiconductor wafer is mounted and relatively moved with respect to the blade to cut the semiconductor wafer. It has been performed using a dicing device equipped with. Further, in this dicing device, a semiconductor wafer is attached to an adhesive sheet, placed on a stage, and a rotating blade is completely cut into the semiconductor wafer for cutting. It is an important issue that chips can be efficiently cut without chipping and chips at the time of cutting can be eliminated without adhering to the semiconductor chip.

【0003】後者の課題である切屑を排除する手段をも
つダイシング方法が、特開平4一159750号公報に
開示されている。この方法は、粘着シートに貼付けられ
た半導体ウェハにブレードを切込み切断するとき、切断
分離され隣接する半導体チップの間隔が狭く切屑が排除
し難いことに着目し、粘着シートを引き延し個々の半導
体チップの間隔を広げ、広げられた半導体チップ間に洗
浄液を吹き付け切屑を排除することを特徴としていた。
A dicing method having means for removing chips, which is the latter problem, is disclosed in Japanese Patent Laid-Open No. 159750/1992. This method focuses on the fact that when a semiconductor wafer attached to an adhesive sheet is cut and cut with a blade, the distance between adjacent semiconductor chips that are cut and separated is narrow and chips are difficult to remove. The feature is that the chips are widened and a cleaning liquid is sprayed between the spread semiconductor chips to eliminate chips.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上述し
た切屑を排除するダイシング方法では、半導体チップ間
に浮遊する切屑やブレードから脱落する研粒は排除され
るものの、粘着シートに固着し半導体チップの際にある
切屑は排除されずそのまま残り切屑を完全に除去できな
いという問題がある。また、洗浄液の噴出圧力を高めて
除去するにしても固着した切屑が除去されないばかり
か、除去されたその他の切屑が高い噴射圧力で飛散し半
導体チップに再付着し下記に述べる後工程に品質の問題
を起すことになる。
However, in the above-mentioned dicing method for removing chips, chips floating between the semiconductor chips and abrasive grains falling off from the blade are eliminated, but when the chips are stuck to the adhesive sheet, There is a problem that the chips in 2 are not eliminated and cannot be completely removed. Moreover, even if the cleaning liquid is increased in ejection pressure to be removed, not only the adhered chips are removed, but also other removed chips are scattered at a high injection pressure and re-adhered to the semiconductor chip, and the quality of the chips is reduced in the subsequent steps described below. Will cause problems.

【0005】例えば、その後の工程であるダイボンディ
ング工程において、切屑が接着面に介在しダイボンディ
ング強度が得られなかったりする。さらに、ボンディン
グ工程では問題が無くても、その後の工程であるワイヤ
ボンディング工程において、ボンディングパッドに付着
した切屑がワイヤとの接続不良を起したり、半導体チッ
プの表面に付着する切屑が半導体チップの回路形成面に
傷をつけたり種々の問題を誘発する。
For example, in a die bonding step which is a subsequent step, chips may intervene on the bonding surface and die bonding strength may not be obtained. Further, even if there is no problem in the bonding step, in the wire bonding step which is the subsequent step, chips attached to the bonding pad may cause connection failure with the wire or chips attached to the surface of the semiconductor chip It damages the circuit formation surface and induces various problems.

【0006】従って、本発明の目的は、後工程に品質の
問題を誘発させる切屑を完全に除去でき半導体チップに
分離分割できるダイシング装置およびその方法を提供す
ることにある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a dicing apparatus and a method therefor capable of completely removing chips that cause quality problems in a subsequent process and separating and dividing into semiconductor chips.

【0007】[0007]

【課題を解決するための手段】本発明の特徴は、予じめ
粘着シートの接着剤塗布面に貼付けられた半導体ウェハ
にブレードを完全に切込み個々の半導体チップに分離分
割する切断装置と、切断分離された前記半導体チップ同
志の間隔を拡げるために前記粘着シートを外方に引延ば
すシート拡張機構と、前記粘着シートの該接着剤の接着
力を低下させる接着力低下手段と、拡張され接着力が弱
められた前記粘着シート上に純水を噴射し洗浄する洗浄
装置とを備えるダイシング装置である。また、前記粘着
シートの該接着剤が紫外線硬化用樹脂であるとともに前
記接着力低下手段が紫外線照射装置であることが望まし
い。
The features of the present invention are a cutting device for completely cutting a semiconductor wafer attached to an adhesive-coated surface of a pre-adhesive sheet with a blade and separating and dividing into individual semiconductor chips, and a cutting device. A sheet expanding mechanism that expands the adhesive sheet outward in order to widen the distance between the separated semiconductor chips, an adhesive force reducing unit that reduces the adhesive force of the adhesive agent of the adhesive sheet, and an extended adhesive force. And a cleaning device that sprays pure water onto the weakened adhesive sheet to clean it. Further, it is preferable that the adhesive of the pressure-sensitive adhesive sheet is an ultraviolet curable resin and the adhesive force reducing means is an ultraviolet irradiation device.

【0008】本発明の他の特徴は、前記半導体ウェハを
該半導体チップに回転する前記ブレードにより切断分割
し、しかる後前記粘着シートを拡張し前記半導体チップ
間の間隔を拡げ、前記粘着シートの該接着剤の接着力を
低下させてから前記粘着シートに純水を噴射し該粘着シ
ートに付着する切屑を剥離除去するダイシング方法であ
る。また、前記半導体ウェハを切断直後に前記半導体チ
ップと前記粘着シートを純水で洗浄するステップを含む
ことが望ましい。
Another feature of the present invention is that the semiconductor wafer is cut and divided by the blade rotating to the semiconductor chip, and then the pressure-sensitive adhesive sheet is expanded to widen the space between the semiconductor chips, thereby This is a dicing method in which the adhesive strength of the adhesive is reduced and then pure water is sprayed onto the pressure-sensitive adhesive sheet to peel off chips that adhere to the pressure-sensitive adhesive sheet. Further, it is preferable that the method includes a step of cleaning the semiconductor chip and the adhesive sheet with pure water immediately after cutting the semiconductor wafer.

【0009】[0009]

【発明の実施の形態】次に、本発明について図面を参照
して説明する。
Next, the present invention will be described with reference to the drawings.

【0010】図1は本発明の一実施の形態におけるダイ
シング装置を示す図である。このダイシング装置は、図
1に示すように、枠10aで張られる粘着シート11に
貼付けられた半導体ウェハ10を載置し位置出しするア
ライメントステージ6と、位置出しされた半導体ウェハ
10をステージ5bに載置し賽目状に半導体ウェハを切
断するブレード5aを具備するカッティング部5と、賽
目状に切断された半導体ウェハ10を貼付ける粘着シー
ト11に紫外線を照射し粘着シート10cの接着力を低
下させる紫外線ランプ1aを具備する紫外線照射部1
と、接着力が低下した粘着シート11を外方に引張り引
伸し切断分割された半導体チップ12の間隔を拡げるシ
ート拡張部3と、半導体チップ12の間隔が拡げられた
粘着シート11および半導体チップ12にノズル4aよ
り洗浄液を噴射し回転させながら洗浄する洗浄ステージ
4とを備えている。
FIG. 1 is a diagram showing a dicing apparatus according to an embodiment of the present invention. As shown in FIG. 1, this dicing device includes an alignment stage 6 for placing and positioning the semiconductor wafer 10 attached to an adhesive sheet 11 stretched by a frame 10a, and the positioned semiconductor wafer 10 on a stage 5b. The adhesive force of the adhesive sheet 10c is obtained by irradiating the cutting portion 5 provided with the blade 5a that is placed and cut the semiconductor wafer into a dice shape and the adhesive sheet 11 to which the semiconductor wafer 10 cut into the dice shape is attached with ultraviolet rays. Ultraviolet irradiation unit 1 including ultraviolet lamp 1a for lowering
A sheet expansion part 3 for expanding the distance between the semiconductor chips 12 that are cut and divided by pulling the pressure-sensitive adhesive sheet 11 having reduced adhesive force to the outside, and the pressure-sensitive adhesive sheet 11 and the semiconductor chips 12 for which the distance between the semiconductor chips 12 is increased. The cleaning stage 4 is provided for spraying the cleaning liquid from the nozzle 4a and cleaning while rotating the cleaning liquid.

【0011】また、図面には示していないが、枠10a
で張られる粘着シート11に貼付けられた半導体ウェハ
10を矢印A,B,C,D,Eの方向に順次搬送し位置
決めする搬送機構が設けられている。カッティング部
5、アライメントステージ6および洗浄ステージ4の機
構は、従来と同じ機構を採用している。
Although not shown in the drawing, the frame 10a
A transport mechanism is provided for sequentially transporting and positioning the semiconductor wafer 10 attached to the pressure-sensitive adhesive sheet 11 stretched in the direction of arrows A, B, C, D, and E. The cutting unit 5, the alignment stage 6, and the cleaning stage 4 have the same mechanism as the conventional one.

【0012】紫外線照射部1は、粘着シート11の裏面
側から紫外線を投射する複数の紫外線ランプ1aで構成
され、ステージに載置された半導体ウェハ10を貼付け
た粘着シート11に紫外線を均一に照射するようにこれ
ら紫外線ランプ1aは並べ配置されている。これら紫外
線ランプ1aの性能は、具体的には、例えば、照度は1
20mW/cm2 以上および光量70mj/cm2 以上
といったUV硬化性樹脂の硬化条件を満足するものであ
る。
The ultraviolet irradiation unit 1 is composed of a plurality of ultraviolet lamps 1a for projecting ultraviolet rays from the back surface side of the adhesive sheet 11, and the ultraviolet rays are uniformly applied to the adhesive sheet 11 to which the semiconductor wafer 10 mounted on the stage is attached. Therefore, these ultraviolet lamps 1a are arranged side by side. The performance of these ultraviolet lamps 1a is, for example, that the illuminance is 1
It satisfies the curing conditions of the UV curable resin such as 20 mW / cm 2 or more and the light amount of 70 mj / cm 2 or more.

【0013】シート拡張部3は、送られてくる半導体ウ
ェハ10の粘着シート11を引き延ばし分割された半導
体チップ12の間隔を拡げる機構を備えている。この機
構は、枠10aよりはみ出した粘着シート11を掴み引
張る爪10bと、図面には示してないが、枠10aと協
働し粘着シート11を保持する締結リングを緩めたり締
たりするレンチとを備えている。
The sheet expanding section 3 is provided with a mechanism for extending the adhesive sheet 11 of the semiconductor wafer 10 sent in and expanding the interval between the divided semiconductor chips 12. This mechanism includes a claw 10b for gripping and pulling the adhesive sheet 11 protruding from the frame 10a, and a wrench (not shown in the drawing) for loosening or tightening a fastening ring which cooperates with the frame 10a and holds the adhesive sheet 11. I have it.

【0014】図2は本発明のダイシング方法の一実施の
形態を説明するためのフローチャート、図3(a)〜
(c)は切屑が排除される過程を示す図である。次に、
本発明のダイシング方法について図1,図2および図3
を参照して説明する。まず、図2のステップAで、図1
のアライメントステージ6に枠10aで保持された粘着
シート11に貼付けられた半導体ウェハ10を載置す
る。このアライメントステージ6では認識カメラにより
位置を認識し半導体ウェハ10の位置が補正される。位
置が補正された半導体ウェハ10は、図2のステップB
でアライメントが取れた状態の半導体ウェハ10は、図
2のカッティング部5のステージ5bに取付けられる。
そして、ブレード5aとステージ5bとの相対的な移動
によって半導体ウェハ10は賽目状に切断される。
FIG. 2 is a flow chart for explaining an embodiment of the dicing method of the present invention, FIGS.
(C) is a figure which shows the process in which chips are removed. next,
Regarding the dicing method of the present invention, FIG. 1, FIG. 2 and FIG.
This will be described with reference to FIG. First, in step A of FIG.
The semiconductor wafer 10 attached to the adhesive sheet 11 held by the frame 10a is placed on the alignment stage 6 of FIG. On the alignment stage 6, the position is recognized by the recognition camera and the position of the semiconductor wafer 10 is corrected. The position-corrected semiconductor wafer 10 is processed in step B of FIG.
The semiconductor wafer 10 aligned in step 1 is attached to the stage 5b of the cutting unit 5 in FIG.
Then, the semiconductor wafer 10 is diced by the relative movement of the blade 5a and the stage 5b.

【0015】次に、図2のステップCで、切断された半
導体ウェハを図1の洗浄ステージ4に移し、洗浄ノズル
4aより純水を流し洗浄し、高速回転させ乾燥すること
が望ましい。この洗浄は、カッティング部5における切
削液および切削屑等が搬送途中で半導体チップ12に固
着し後の洗浄で除去し難くなるからである。ここで、切
断され半導体チップ12に分離された状態は、図3
(a)に示すように、ブレード5aの幅と略等しい間隔
で半導体チップ12が粘着シート11に固着された状態
である。そして、ステップCで除去できなかった半導体
チップ12の際に粘着シート11に固着した切屑13が
残ったままになる。
Next, in step C of FIG. 2, it is desirable that the cut semiconductor wafer is transferred to the cleaning stage 4 of FIG. 1, pure water is made to flow from the cleaning nozzle 4a for cleaning, and it is rotated at a high speed and dried. This cleaning is because cutting fluid, cutting wastes, and the like in the cutting portion 5 are fixed to the semiconductor chip 12 during transportation and are difficult to remove in subsequent cleaning. Here, the state of being cut and separated into the semiconductor chips 12 is shown in FIG.
As shown in (a), the semiconductor chips 12 are fixed to the adhesive sheet 11 at intervals substantially equal to the width of the blade 5a. Then, in the case of the semiconductor chip 12 that could not be removed in step C, the chips 13 fixed to the adhesive sheet 11 remain.

【0016】次に、図2のステップDで、枠10aに保
持された粘着シート11を図1の紫外線照射部1に送
り、紫外線照射を行なう。そして、図2のステップE
で、紫外線硬化処理された粘着シート11を枠10aと
ともに図1の拡張シート部3に送り、粘着シート11を
引き延す。その結果、図3(b)に示すように、切屑1
3は半導体チップ12の際より引き離され拡張された間
隔の上に現われる。
Next, in step D of FIG. 2, the adhesive sheet 11 held by the frame 10a is sent to the ultraviolet irradiation unit 1 of FIG. 1 to perform ultraviolet irradiation. Then, step E in FIG.
Then, the adhesive sheet 11 that has been subjected to the ultraviolet curing treatment is sent together with the frame 10a to the expansion sheet portion 3 in FIG. 1, and the adhesive sheet 11 is stretched. As a result, as shown in FIG.
3 appears on the space which is separated from the semiconductor chip 12 and expanded.

【0017】次に、図2のステップFで、粘着シート1
1が拡張され半導体チップ12の間隔が拡げられた状態
で枠10aが図1の洗浄ステージ4に送られる。そし
て、ノズル4aから純水噴射によって、接着剤が脆弱化
した粘着シート11より切屑13を取去って図3(c)
のような状態になる。しかる後、枠10aを高速回転し
粘着シート11および半導体チップ12を乾燥する。
Next, in step F of FIG. 2, the adhesive sheet 1
The frame 10a is sent to the cleaning stage 4 of FIG. 1 in a state where 1 is expanded and the distance between the semiconductor chips 12 is expanded. Then, the chips 13 are removed from the pressure-sensitive adhesive sheet 11 in which the adhesive is fragile by spraying pure water from the nozzle 4a, and then, as shown in FIG.
It becomes a state like. After that, the frame 10a is rotated at a high speed to dry the adhesive sheet 11 and the semiconductor chip 12.

【0018】この実施の形態では、UV硬化性接着剤を
用いた粘着シート材料とUV照射機能を備えたダイシン
グ装置との組合せにより、ウェハ切断後の粘着性低下を
実現したが、粘着シートに熱硬化性接着剤を使用して、
装置にヒータブロックあるいは赤外線ヒータ等の加熱機
能をもつダイシング装置との組合せでも、同様の効果が
得られる。
In this embodiment, the adhesiveness after the wafer is cut is reduced by combining the adhesive sheet material using the UV curable adhesive and the dicing device having the UV irradiation function. Using curable adhesive,
The same effect can be obtained by combining the device with a dicing device having a heating function such as a heater block or an infrared heater.

【0019】また、このダイシング装置では、半導体チ
ップを粘着シートより剥離し易いように粘着シートの接
着力を弱める手段と、半導体チップの間隔を広げる手段
を設ける手段とを備えているので、その後の工程で使用
されるダイマウンタとの複合化が簡単に行なえるという
利点がある。何となれば、従来、半導体チップを粘着シ
ートから取易いように、ダイマウンタに設けられていた
半導体チップの間隔を拡張する装置および接着力を弱め
る装置が不要となり、単に、この装置にピックアップ機
構とマウンタステージとを備えれば済むからである。
Further, since this dicing apparatus is provided with means for weakening the adhesive force of the adhesive sheet so that the semiconductor chip can be easily peeled off from the adhesive sheet, and means for providing a means for widening the gap between the semiconductor chips, the following steps are performed. There is an advantage that it can be easily combined with the die mounter used in the process. What is needed is a device for expanding the distance between the semiconductor chips and a device for weakening the adhesive, which are conventionally provided on the die mounter so that the semiconductor chip can be easily removed from the adhesive sheet. This is because it only needs to be equipped with a stage.

【0020】[0020]

【発明の効果】以上説明したように本発明は、粘着シー
トに貼り付けられる半導体ウェハから切断分離された半
導体チップ間の間隔を拡げる粘着シートを延し拡げるシ
ート拡張機構と、延し拡げられた粘着シートの接着剤の
接着能力を低下させる手段とを設け、粘着シート上の半
導体チップ同志の間隔を広げ切屑を該間隔に露呈させる
とともに切屑への接着力を低下させてから、洗浄水の噴
射力で切屑を取り去ることによって、強固に粘着シート
に保持された切屑も容易に除去することができ、後工程
の品質に悪影響を与える切屑を付着させることなく切断
分割された半導体チップを供給することができるという
効果がある。
As described above, according to the present invention, the sheet expanding mechanism for expanding and expanding the adhesive sheet for expanding the distance between the semiconductor chips cut and separated from the semiconductor wafer attached to the adhesive sheet, and the expanding and expanding operation. A means for reducing the adhesive ability of the adhesive of the pressure-sensitive adhesive sheet is provided to widen the space between the semiconductor chips on the pressure-sensitive adhesive sheet to expose the chips to the space and reduce the adhesive force to the chips, and then to inject the cleaning water. By removing the chips with force, the chips firmly held on the adhesive sheet can also be easily removed. There is an effect that can be.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施の形態におけるダイシング装置
を示す図である。
FIG. 1 is a diagram showing a dicing apparatus according to an embodiment of the present invention.

【図2】本発明のダイシング方法の一実施の形態を説明
するためのフローチャートである。
FIG. 2 is a flowchart for explaining an embodiment of a dicing method of the present invention.

【図3】切屑が排除される過程を示す図である。FIG. 3 is a diagram showing a process of removing chips.

【符号の説明】 1 紫外線照射部 1a 紫外線ランプ 3 シート拡張部 4 洗浄ステージ 4a ノズル 5 カッティング部 5a ブレード 5b ステージ 6 アライメントステージ 10 半導体ウェハ 10a 枠 10b 爪 11 粘着シート 12 半導体チップ 13 切屑[Explanation of Codes] 1 UV irradiation part 1a UV lamp 3 Sheet expansion part 4 Cleaning stage 4a Nozzle 5 Cutting part 5a Blade 5b Stage 6 Alignment stage 10 Semiconductor wafer 10a Frame 10b Claw 11 Adhesive sheet 12 Semiconductor chip 13 Chips

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 予じめ粘着シートの接着剤塗布面に貼付
けられた半導体ウェハにブレードを完全に切込み個々の
半導体チップに分離分割する切断装置と、切断分離され
た前記半導体チップ同志の間隔を拡げるために前記粘着
シートを外方に引延ばすシート拡張機構と、前記粘着シ
ートの該接着剤の接着力を低下させる接着力低下手段
と、拡張され接着力が弱められた前記粘着シート上に純
水を噴射し洗浄する洗浄装置とを備えることを特徴とす
るダイシング装置。
1. A cutting device for completely cutting a blade into a semiconductor wafer attached to an adhesive-coated surface of a pre-adhesive sheet to separate and divide into individual semiconductor chips, and a distance between the cut and separated semiconductor chips. A sheet expansion mechanism that stretches the adhesive sheet outward to expand it, an adhesive force reduction unit that reduces the adhesive force of the adhesive agent of the adhesive sheet, and a pure adhesive sheet on the expanded and weakened adhesive force. A dicing device comprising: a cleaning device that sprays water for cleaning.
【請求項2】 前記粘着シートの該接着剤が紫外線硬化
用樹脂であるとともに前記接着力低下手段が紫外線照射
装置であることを特徴とする請求項1記載のダイシング
装置。
2. The dicing apparatus according to claim 1, wherein the adhesive of the pressure-sensitive adhesive sheet is an ultraviolet curable resin, and the adhesive force reducing means is an ultraviolet irradiation device.
【請求項3】 前記半導体ウェハを該半導体チップに回
転する前記ブレードにより切断分割し、しかる後前記粘
着シートを拡張し前記半導体チップ間の間隔を拡げ、前
記粘着シートの該接着剤の接着力を低下させてから前記
粘着シートに純水を噴射し該粘着シートに付着する切屑
を剥離除去することをを特徴とするダイシング方法。
3. The semiconductor wafer is cut and divided by the blade rotating to the semiconductor chip, and then the pressure-sensitive adhesive sheet is expanded to widen the gap between the semiconductor chips to increase the adhesive force of the adhesive agent of the pressure-sensitive adhesive sheet. A dicing method, characterized in that, after lowering, the adhesive sheet is sprayed with pure water to remove chips adhered to the adhesive sheet.
【請求項4】 前記半導体ウェハを切断直後に前記半導
体チップと前記粘着シートを純水で洗浄するステップを
含むことを特徴とする請求項3記載のダイシング方法。
4. The dicing method according to claim 3, further comprising a step of cleaning the semiconductor chip and the adhesive sheet with pure water immediately after cutting the semiconductor wafer.
JP8076095A 1996-03-29 1996-03-29 Dicing device and its method Pending JPH09266182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8076095A JPH09266182A (en) 1996-03-29 1996-03-29 Dicing device and its method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8076095A JPH09266182A (en) 1996-03-29 1996-03-29 Dicing device and its method

Publications (1)

Publication Number Publication Date
JPH09266182A true JPH09266182A (en) 1997-10-07

Family

ID=13595303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8076095A Pending JPH09266182A (en) 1996-03-29 1996-03-29 Dicing device and its method

Country Status (1)

Country Link
JP (1) JPH09266182A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003060971A1 (en) * 2002-01-10 2003-07-24 Disco Corporation Cutting device
JP2006352031A (en) * 2005-06-20 2006-12-28 Lintec Corp Device and method of dividing platy member
WO2009063825A1 (en) * 2007-11-16 2009-05-22 Tokyo Seimitsu Co., Ltd. Wafer processing apparatus
JP2010206136A (en) * 2009-03-06 2010-09-16 Disco Abrasive Syst Ltd Work dividing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206267A (en) * 1992-01-29 1993-08-13 Fujitsu Ltd Manufacture of semiconductor device
JPH0745556A (en) * 1993-07-26 1995-02-14 Disco Abrasive Syst Ltd Dicing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206267A (en) * 1992-01-29 1993-08-13 Fujitsu Ltd Manufacture of semiconductor device
JPH0745556A (en) * 1993-07-26 1995-02-14 Disco Abrasive Syst Ltd Dicing device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003060971A1 (en) * 2002-01-10 2003-07-24 Disco Corporation Cutting device
US6861654B2 (en) 2002-01-10 2005-03-01 Disco Corporation Cutting device
KR100849589B1 (en) * 2002-01-10 2008-07-31 가부시기가이샤 디스코 Cutting machine
JP2006352031A (en) * 2005-06-20 2006-12-28 Lintec Corp Device and method of dividing platy member
JP4680693B2 (en) * 2005-06-20 2011-05-11 リンテック株式会社 Plate-shaped member dividing device
WO2009063825A1 (en) * 2007-11-16 2009-05-22 Tokyo Seimitsu Co., Ltd. Wafer processing apparatus
JP2010206136A (en) * 2009-03-06 2010-09-16 Disco Abrasive Syst Ltd Work dividing device

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