JPH09246331A - Manufacture of semiconductor device and wire pattern film using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively prevent the disconnection of a lead after bonding by concave-convex engaging the end face of a bonding tool with the contact surface of the lead in contact with the tool, bonding them, thereby effectively bonding to an electrode terminal with excellent retentivity of the lead. SOLUTION: A bonding tool 22 bonds the lead 6 of a wire pattern film 12 to the electrode terminal 8 of a semiconductor chip 10. The tool 22 protrudes down at the end of the lead 6 to bond. An engaging protrusion 30 is provided on the surface of the lead 6 in contact with the end face of the tool 22. The recess 22a engaged with the protrusion 30 is provided at the end face of the tool 22. The tool 22 bonds while concave-convex engaging the recess 22a with the protrusion 30. Thus, the lead 6 is accurately aligned with the electronic terminal 8 of the chip 10, and can be bonded.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device having a size substantially the same as that of a semiconductor chip and a wiring pattern film used for the method.

[0002]

2. Description of the Related Art As a semiconductor device formed by sealing a semiconductor chip, there is a product formed to be substantially the same size as a semiconductor chip. In this semiconductor device, a surface on which electrode terminals of a semiconductor chip are formed is sealed, and external connection terminals for connecting to a mounting substrate are arranged on this surface to form a semiconductor chip having substantially the same size. . FIG. 15 shows a conventional example of a semiconductor device formed in a chip size as viewed from the mounting surface side. 5 is an external connection terminal, and 6 is a lead for electrically connecting the external connection terminal 5 to an electrode terminal of the semiconductor chip.
The electrode terminals are arranged in the peripheral portion of the semiconductor chip, and the leads 6 are drawn out from the external connection terminals 5 to the outer peripheral side via the wiring pattern and electrically connected to the electrode terminals.
Reference numeral 7 denotes a can for holding the semiconductor chip.

FIG. 16 shows a connection state between the leads 6 and the electrode terminals 8 of the semiconductor chip 10, a support state of the external connection terminals 5 on the semiconductor chip 10, and the like. In this semiconductor device, a wiring pattern film 12 in which an external connection terminal 5 is joined to one end and a wiring pattern 9 having the other end formed as a lead 6 is supported by an insulating film 20 is provided with a semiconductor chip 10 via an adhesive layer 14 such as an elastomer. 6 attached to a wire and extended from the peripheral edge of the wiring pattern film 12
Is bonded to the electrode terminal 8. 14a is the same resin as the adhesive layer 14, and after the leads 6 are bonded, the exposed portions of the leads 6 and the electrode terminals 8 are sealed. Reference numeral 16 is a solder resist that covers the surface of the wiring pattern film 12 except the external connection terminals 5. In addition,
When the wiring pattern film 12 is bonded to the semiconductor chip 10, it is possible to bond the wiring pattern film 12 without the adhesive layer 14 by using the insulating film 20 having adhesiveness.

FIG. 17 shows how the leads 6 of the wiring pattern film 12 are bonded to the electrode terminals 8. When the lead 6 is bonded, as shown in the figure, the bonding tool 22 is brought into contact with the upper surface of the lead 6, the lead 6 is pierced by the bonding tool 22, and the lead 6 supported by the insulating film 20 is pierced. The lead 6 is pushed and bent by the end face of the bonding tool 22 and pushed down to the position of the electrode terminal 8 to be joined. By this bonding operation, the leads 6 are
As shown in FIG. 5, the base end side is bent toward the electrode terminal 8 in a curved shape. Bonding with the bonding tool 22 is performed by thermocompression bonding using ultrasonic waves.

FIG. 18 is an enlarged view showing a state in which the wiring pattern film 12 is arranged on the semiconductor chip 10. Lead 6
Is supported by a window portion provided on the insulating film 20 so as to be bridged over the insulating film 20, the electrode terminal 8 is exposed at the window portion, and the lead 6 is provided above each electrode terminal 8.
Wiring pattern film 1 aligned so that
Two are glued. The bonding tool 22 is pushed down from above the cutting position of the lead 6 to cut the lead 6, and then the electrode terminal 8 is moved slightly laterally from the cutting position.
And the leads 6 are bonded to the electrode terminals 8. The bonding by the bonding tool 22 is thus performed for each of the leads 6 one by one.

[0006]

FIG. 19 shows a tool end of a bonding tool 22 used when a semiconductor device is manufactured using the wiring pattern film 12. The bonding tool 22 has a cross-shaped recess 22a on its end face, and has an edge formed at an acute angle. In this way, the end portion of the bonding tool 22 is formed with an acute angle so that the lead 6 can be easily cut when the lead 6 is bonded, and after the lead 6 is cut, the lead 6 is cut. This is because it is possible to reliably hold and bend to the position of the electrode terminal 8.

After cutting the lead 6, the bonding tool 22 moves laterally slightly and descends to the electrode terminal 8. Therefore, at this time, the bonding tool 2 is attached to the lead 6.
When 2 slides, the lead 6 cannot be surely aligned with the position of the electrode terminal 8 for bonding. Therefore, conventionally, the edge portion of the end face of the bonding tool 22 is formed at an acute angle to obtain the holding property of the lead 6. However, when the bonding tool 22 in which the edge portion of the end face is formed into an acute angle as described above is used, the strength of the lead 6 joined to the electrode terminal 22 is weakened at the joined end, and the lead 6 is easily broken at the joined end. Is occurring.

FIG. 20 is an enlarged view of the bonding portion 6a of the lead 6 at the electrode terminal 8. When the lead 6 is bonded to the electrode terminal 8, the bonding tool 22 slightly crushes the lead 6. At this time, the bonding portion 6
A bulging portion 6b is formed on the upper surface of a by the concave portion 22a, but at the rising portion A of the lead 6, an acute angle portion is formed by the edge portion of the end face of the bonding tool 22, and thus the rising portion formed at an acute angle. Cracks are likely to occur at the portion, the strength at the joining end is weakened, and the lead 6 is easily broken.

The present invention has been made to solve the problems in forming a semiconductor device using the above-mentioned wiring pattern film, and improves the retention of the leads when the leads are bonded. An object of the present invention is to provide a method for manufacturing a semiconductor device, which can reliably bond a lead to an electrode terminal, and can effectively prevent disconnection of the lead after bonding, and a wiring pattern film used for the same.

[0010]

The present invention has the following constitution in order to achieve the above object. That is, on the surface of the semiconductor chip on which the electrode terminals are formed, one end is formed in a terminal portion that forms an external connection terminal, and the other end is a wiring pattern formed in a lead that connects to the electrode terminal. A wiring pattern film formed to be supported by an insulating film as a window is exposed by adhering the electrode terminals at the window portion with the surface forming the external connection terminal as an outer surface, and the window portion of the wiring pattern film is bonded. While the lead is supported by the insulating film at both ends of the bonding tool, the bonding tool is pushed down from above the lead to break the lead, and the cut lead end is bent at the end face of the bonding tool while bending the lead. In the method of manufacturing a semiconductor device, in which a lead end is aligned and bonded to the electrode terminal, Wherein an end face of the Gutsuru bonding tool is characterized in that the bonding uneven engagement engaged the abutment surface of the lead abutting. As the bonding tool, it is effective to form the peripheral edge portion of the end surface that abuts the lead into a smooth curved surface. Further, as the wiring pattern film, one having an engaging projection provided on a lead surface with which the bonding tool abuts is used, and as the bonding tool, one having a concave portion on the end surface engaging in concave and convex with the engaging projection is used. It is characterized by Further, as the wiring pattern film, one in which an engaging concave portion or an engaging hole penetrating the lead is provided on a lead surface with which the bonding tool abuts is used, and as the bonding tool, engaging engaging in concave and convex with the engaging concave portion is used. It is characterized in that a projection or a projection provided on the end face that fits into the engagement hole is used. Also, on the surface where the electrode terminals of the semiconductor chip are formed,
One end is formed on a terminal portion forming an external connection terminal, and the other end is formed on a wiring pattern formed on a lead connected to the electrode terminal supported by an insulating film with the portion on which the lead is formed as a window. Wiring pattern film,
With the surface forming the external connection terminal as an outer surface, the electrode terminals are exposed and adhered at the window portion, and the leads supported by the insulating film at both ends of the window portion of the wiring pattern film are provided above the leads. A semiconductor device in which the bonding tool is pushed down from the end to pierce the lead, and the pierced lead end is pierced by the end face of the bonding tool to bend the lead while aligning the lead end with the electrode terminal for bonding. In the wiring pattern film used in the manufacturing of 1., the lead contacting the bonding tool is provided with an engaging projection, an engaging recess or an engaging hole that engages with the end face of the bonding tool in a concavo-convex manner. Further, at the cutting position of the lead, a notch portion is formed by cutting the lead in the width direction, and the lead portion on the front side of the cutting position of the notch portion is formed wider than a predetermined lead width. This is effective in enabling accurate bonding.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below. FIG. 1 shows the configuration of an embodiment of a wiring pattern film 12 according to the present invention and the wiring pattern film 1
A configuration of a bonding tool 22 or the like for bonding the second lead 6 to the electrode terminal 8 of the semiconductor chip 10 is shown. The overall structure of the wiring pattern film 12 is similar to that of the conventional wiring pattern film, and the external connection terminal 5 is formed at one end of the wiring pattern 9, and the other end of the wiring pattern 9 is bonded to the electrode terminal 8 of the semiconductor chip 10. The wiring pattern 9 is formed as the lead 6 and is supported by the insulating film 20. The wiring pattern film 12 is bonded to the semiconductor chip 10 via a flexible adhesive layer 14 such as an elastomer.

The method of bonding the leads 6 of the wiring pattern film 12 to the electrode terminals 8 using the bonding tool 22 is also the same as in the conventional example described above. That is,
The bonding tool 22 is pushed down from above the position where the lead 6 is cut, the lead 6 is cut off, and the lead 6 is pressed and bent by the bonding tool 22 to bond to the electrode terminal 8.

FIG. 2 is an enlarged view showing a state in which the wiring pattern film 12 is bonded to the semiconductor chip 10. The lead 6 is supported above the electrode terminal 8 of the semiconductor chip 10 so as to extend over the window portion of the insulating film 20. The arrangement interval of the leads 6 matches the arrangement interval of the electrode terminals 8. The arrangement of these leads 6 is the same as that of the conventional example, but the configuration characterized by the wiring pattern film 12 of the present embodiment is such that the bonding tool 2 is provided on the leads 6.
The point is that an engaging protrusion 30 is formed at a portion where 2 abuts, which engages with a concave portion formed on the end surface of the bonding tool 22 in a concavo-convex manner.

That is, as shown in FIG. 1, the bonding tool 22 performs bonding by pushing down the ends of the leads 6, and the engaging projections 30 are formed on the surfaces of the leads 6 with which the end faces of the bonding tools 22 abut. A concave portion 22a that engages with the engaging protrusion 30 is provided on the end surface of the bonding tool 22 that comes into contact with the upper surface of the lead 6, and the concave portion 22a and the engaging protrusion 30 are bonded to each other while engaging in concave and convex. .

The size and shape of the engagement protrusion 30 formed on the surface of the lead 6 and the bonding tool 22 are set so that they are engaged with each other by concave and convex engagement. FIG. 3 (a) is a perspective view near the end face of the bonding tool 22, and FIG. 3 (b) is a sectional view. As described above, the bonding tool 22 of the present embodiment is provided with the concave portion 22a that engages with the engagement protrusion 30 on the end surface that abuts the lead 6, but in addition to this, the peripheral portion of the end surface that abuts the lead 6 is smooth. It is characterized in that it is formed into a curved surface so as not to form an acute edge portion like the conventional bonding tool 22 on the end face.

Although FIG. 3 shows an example of the bonding tool 22 formed in the shape of a round bar, the same applies to the case where the rectangular bonding tool 22 shown in FIG. 4 is used. That is, the end face of the bonding tool 22 is provided with the recess 22a that engages with the engagement protrusion 22, and the corner portion of the end face is formed into a curved surface so that no sharp edge portion is formed on the end face.

When the leads 6 are bonded by using the bonding tool 22 as described above, the engaging projections 30 formed on the leads 6 and the recesses 2 of the bonding tool 22 are formed.
Since the bonding is carried out in the state where the lead 6 and the semiconductor chip 2a are engaged with each other, the bonding tool 22 does not slip on the leads 6 during the bonding, and the leads 6 are connected to the semiconductor chip 1
It becomes possible to accurately align and bond to the position of the electrode terminal 8 of 0.

Since the end surface of the bonding tool 22 is formed into a smooth curved surface, the leads 6 are attached to the electrode terminals 8.
No sharp-edged portion is formed at the joint end of the lead 6 when bonding is performed, whereby the strength at the joint end of the lead 6 can be improved and cracks can be prevented from occurring at the joint end. It is possible to prevent the problem that the lead 6 is cut off from the portion.

FIG. 5 shows the bonding tool 22 shown in FIG.
The bonding portion 6a in which the lead 6 is bonded to the electrode terminal 8 by using is shown in an enlarged manner. Although the tips of the leads 6 are pressed and joined to the electrode terminals 8, the rising portions of the electrode terminals 8 and the leads 6 are formed smoothly. A small protrusion 30a is formed by the engaging protrusion 30 at the center of the lead tip.

In the present embodiment, the end surface of the bonding tool 22 is formed into a curved surface in this manner so that no acute angle portion is formed at the joint between the lead 6 and the electrode terminal 8. If formed on a curved surface, the holding property of the bonding tool 22 with respect to the lead 6 is deteriorated. In order to solve this, in the present embodiment, the engagement protrusion 30 is formed on the lead 6, and the bonding tool 22 and the engagement protrusion 30 are engaged with each other in a concavo-convex manner to reliably obtain the holding property of the bonding tool 22 with respect to the lead 6. .

The method of improving the holding property of the bonding tool 22 with respect to the lead 6 by engaging the lead 6 and the bonding tool 22 during bonding is not limited to the above embodiment. In FIG. 6, the lead 6 is engaged with the bonding tool 22 and is bonded.
An example of the formation of FIG. 6 (a) shows a case in which the engaging protrusion 30 is formed on the surface of the lead 6 in the case of the above embodiment, and FIG.
In FIG. 6C, the engaging recessed portion 32 is formed in the lead 6, and in FIG. 6C, the engaging hole 34 is provided in the lead 6.

When the lead 6 is provided with the engaging recess 32 or the engaging hole 34 as shown in FIGS. 6B and 6C, the end surface of the bonding tool 22 is provided with the engaging recess 32 or the engaging hole 34. A protrusion 22b that engages with 34 is provided. FIG. 7 shows an example of the bonding tool 22 having a protrusion 22b on its end face. FIG. 8 is an enlarged explanatory view showing a state in which the lead 6 having the engagement hole 34 is bonded to the electrode terminal 8 by using the bonding tool 22 shown in FIG.

As described above, various other methods can be adopted as the method of engaging the lead 6 and the end surface of the bonding tool 22 with each other. For example, in the above embodiment, one engaging protrusion 30, one engaging recess 32, and one engaging hole 34 are provided, but it is also possible to provide a plurality of engaging protrusions 30 on the lead 6. Further, although the engaging portion in the above embodiment has a simple protrusion shape or a circular hole shape, it may be formed in a protrusion or a groove shape.

The bonding tool 22 is used for the lead 6
In order to accurately bond the lead 6 to the electrode terminal 8, it is necessary to accurately cut the lead 6 at a predetermined position when the lead 6 is cut by the bonding tool 22. In FIG. 2, the lead 6
The notch portion 36 is provided in accordance with the cutting position of the above. This is to allow the lead 6 to be cut by the notch portion 36 when the lead 6 is cut by the bonding tool 22 to enable accurate bonding. belongs to. The notch portion 36 is formed in a shape in which the lead 6 is cut in the width direction. As described above, by providing the notch portion 36 on the lead 6 and further providing the engaging protrusion 30 and the like, more reliable bonding becomes possible.

FIG. 9 shows an example of forming the lead 6 provided with the notch portion 36. In this embodiment, the conductor portion 37 on the front side of the cutting position of the lead 6 is formed wider than the lead 6, and the conductor portion 37 is reinforced so that the notch portion 36 can more reliably cut the lead 6. . Further, in this embodiment, the taper portion 38 is provided on the base end side of the lead 6. The taper portion 38 reinforces the base end side portion of the lead 6, and when the lead 6 is bent and bonded by the bonding tool 22, the lead 6 is smoothly bent at the base end side portion so that a predetermined bending shape is obtained. It is something that can be obtained.

As described above, in the present embodiment, the wiring pattern film 12 in which the engaging projection 30, the engaging recess 32, or the engaging hole 34 is provided in the lead 6 is used in manufacturing a chip-sized semiconductor device. Below, the manufacturing method of this wiring pattern film 12 and the manufacturing method of the semiconductor device using this wiring pattern film 12 are demonstrated.

FIG. 10 shows a wiring pattern film 12 using copper as the conductor core of the wiring pattern 9 and the leads 6.
The manufacturing process of FIG. FIG. 10A shows an insulating film 40 such as a polyimide film used as a support for the wiring pattern film 12. The insulating film 40 is a film having an adhesive applied to one side thereof. First, the insulating film 40 is punched to open a window 42, and then a copper foil 44 is adhered to one side of the insulating film 40 (FIG. 10 (b). )). The window 42 is a portion where the lead 6 to be joined to the electrode terminal 8 of the semiconductor chip 10 is formed, and is formed in accordance with the arrangement position of the electrode terminal 8 of the semiconductor chip 10.

Next, the copper foil 44 is etched to form the wiring pattern 9, leads 6 and lands. The land is a portion for joining and supporting the external connection terminal 5 such as a solder ball, and is provided so as to be integrally connected to the wiring pattern 9 according to the size of the external connection terminal 5. A method of etching the copper foil 44 to form these wiring patterns 9 and the like is based on a so-called photolithography method.

That is, a resist 45 is formed on the surface of the copper foil 44.
Is applied and exposed and developed in a predetermined pattern to form a resist pattern exposing only the portion where the copper foil 44 is removed, and the copper foil 44 is etched by using this resist pattern as a mask (FIG. 10 (c)). After etching the copper foil 44, the resist 45 and the resist 46 are removed. As a result, the wiring pattern 9 and the leads 6 are formed (see FIG. 10).
(d)). The lead 6 is supported so as to extend over the window 42 as shown.

Next, in order to protect the wiring pattern film 12 on the surface of the wiring pattern 9 and the surface of the insulating film 40 on the surface where the wiring pattern 9 is formed, the external connection terminal 5 is used.
A solder resist 48 is applied to attach the. The solder resist 48 is patterned to remove only the solder resist 48 in the region where the land 9a is formed. As a result, the land portion to which the external connection terminal 5 is joined is exposed, and the external connection terminal 5 can be mounted on the land 9a (FIG. 10 (e)).

Next, gold plating is applied to form a gold plating layer 50 on the outer surface of the lead 6 and the surface of the land 9a. By this gold plating, the surface of the copper core layer of the lead 6 is covered with the gold plating layer 50. Further, the gold plating layer 50 is formed on the surface of the land 9a also in the land 9a portion (FIG. 10 (f)).

Next, in this embodiment, the engaging projection 30 is formed on the lead 6. The engagement protrusion 30 can be formed by coating the lead 6 with a resist, exposing only a portion where the engagement protrusion 30 is formed, performing gold plating, and embossing the gold plating. In this operation, a required portion such as the external connection terminal 5 is shielded by a resist. FIG. 10F shows the wiring pattern film 12 in which the engaging projection 30 is formed on the lead 6. When the engaging recess 32 or the engaging hole 34 is formed in the lead 6 instead of providing the engaging protrusion 30, the lead 6 is etched or the wiring pattern 9 and the lead 6 are formed. (FIG. 10D), they can be formed simultaneously.

FIG. 11 shows a planar shape of the wiring pattern film 12 obtained by the above method. The wiring pattern film 12 was supported by the leads 6 laid between a central insulating film 40a for supporting the external connection terminals 5 and a frame-shaped insulating film 40b around the central insulating film 40a. Will be things.

When forming a semiconductor device, the wiring pattern film 12 is aligned with the semiconductor chip 10, and the wiring pattern film 12 is bonded to the semiconductor chip 10 with the surface for joining the external connection terminals 5 as the outer surface.
The portion bonded to the semiconductor chip 10 is the portion of the insulating film 40a to which the external connection terminal 5 is attached, and the semiconductor chip 10 is the inner region where the electrode terminals 8 are arranged (FIG. 1).
2). After bonding the wiring pattern film 12, each lead 6 is bonded to the electrode terminal 8 by a bonding tool 22. The same resin 14a as the adhesive layer 14 is applied to the exposed portion of the bonding portion of the lead 6 and sealed. After this, solder balls are joined to the lands 9a to form the external connection terminals 5, which are finally obtained as a semiconductor device product (see FIG. 1).
2).

FIG. 13 shows another manufacturing process for forming the wiring pattern film 12. In this method, the insulating film 4
One-sided copper-clad film 60 with copper foil 44 attached to one side of 0
Is used (FIG. 13 (a)). First, gold plating for forming the wiring pattern 9 and the leads 6 is performed on the copper foil 44 of the one-sided copper-clad film 60. As described above, the wiring pattern 9 is for electrically connecting the external connection terminal 5 and the lead 6, and the lead 6 is for bonding to the electrode terminal 8 of the semiconductor chip 10.

FIG. 13B shows a state in which a resist 45 is applied on the copper foil 44 to form a resist pattern in which only the portions where the wiring pattern 9 and the leads 6 are formed are exposed. In this state, the copper foil 44 is plated with gold to form the gold plating layer 62 on the copper foil 44 (FIG. 13C). Figure 13 (d)
Shows a state where the gold plating layer 62 is formed on the copper foil 44 in a predetermined pattern.

Next, a connection hole 64 is formed in the insulating film 40 to form the external connection terminal 5. Connection hole 64
Can be formed using laser light or etching. The connection hole 64 is formed so as to expose the copper foil 44 that will become the wiring pattern 9 at the site where the external connection terminal 5 is formed (FIG. 13 (e)). The external connection terminal 5 is formed by plating the inside of the connection hole 64. Since the copper foil 44 is formed on the entire surface of the insulating film 40, the plating can be raised by electrolytic plating using the copper foil 44 as a plating power supply layer.

A window 42 for forming the external connection terminal 5 in a bump shape by electrolytic plating and bonding the lead 6
Is formed on the insulating film 40, and then the copper foil 44 is etched using an etching solution capable of selectively removing only the copper foil 44. FIG. 13F shows a state after the copper foil 44 is etched. In the window 42, the gold plating layer 62 remains as the lead 6 for bonding.

As described above, the lead 6 has the gold plating layer 62.
Therefore, it is necessary to appropriately set the plating thickness of the gold plating layer 62 so that the required strength and the like of the lead 6 can be obtained. The wiring pattern film 12 used in the present embodiment is one in which the engaging projection 30 is provided on the surface of the lead 6. When the engaging protrusion 30 is provided on the surface of the lead 6, resist is applied to the surface of the lead 6 in the state of FIG.
The resist is patterned to form a resist pattern in which the surface of the lead 6 is exposed only at the portion where the engaging protrusion 30 is formed, and gold plating is raised to form the resist pattern.

After forming the engaging projections 30, the resist is removed to obtain the wiring pattern film 12 in which the engaging projections 30 are formed on the leads 6 (FIG. 13 (g)). In the wiring pattern film 12, the external connection terminals 5 are formed on one surface of the insulating film 40, and the wiring pattern 9 and the leads 6 are supported on the other surface of the insulating film 40. The method for forming a chip-sized semiconductor device using this wiring pattern film 12 is also the same as the method described above. The wiring pattern film 12 is adhered to the semiconductor chip 10 via the adhesive layer 14, and the leads 6 are cut through by the bonding tool 22 while the semiconductor chip 1 is being cut.
Each lead 6 is bonded to the 0 electrode terminal 8.

In the present embodiment, when the engaging recess 32 or the engaging hole 34 is formed in the lead 6 instead of the engaging protrusion 30, the lead 6 is formed in FIG. 13 (f) and then the lead 6 is etched. The engaging recess 32 or the engaging hole 34 may be formed by using the above. FIG. 14 shows a chip-sized semiconductor device produced by using the wiring pattern film 12 produced by the above method. In this semiconductor device, the mounting surface on which the external connection terminals 5 are arranged is covered and protected by the insulating film 40.

In the semiconductor device described above, the adhesive layer 14
Through the wiring pattern film 12 to the semiconductor chip 10
Adhered to the insulating film 2 without using the adhesive layer 14.
It is also possible to adhere the wiring pattern film 12 to the semiconductor chip 10 by utilizing the adhesiveness of 0 itself. Also,
In any of the semiconductor devices of the above embodiments, the semiconductor chip 1 is used.
The electrode terminal 8 is arranged in the vicinity of the edge portion of 0, the lead 6 is extended from the peripheral edge of the wiring pattern film 12, and the lead 6 is bonded to the electrode terminal 8. Semiconductor chip 10
The electrode terminal 8 is not necessarily arranged only in the vicinity of the edge portion in this way, but may be arranged in the vicinity of the central portion of the semiconductor chip 10.

As described above, when the electrode terminal 8 is arranged inside the edge of the semiconductor chip 10, a window is opened in the wiring pattern film 12 in accordance with the position where the electrode terminal 8 is formed. In the same way as the above embodiment,
Place and bond. Lead 6 of the above embodiment
The above bonding method can be similarly applied to the case of bonding in the region inside the edge of the wiring pattern film 12 as described above. When the bonding of the leads 6 is referred to in this specification, the semiconductor chip 10 is
It is meant to include bonding in an area inside the edge of the.

[0044]

As described above, according to the method for manufacturing a semiconductor device of the present invention, the leads of the wiring pattern film can be accurately aligned and bonded to the electrode terminals of the semiconductor chip using the bonding tool. You can
Further, the strength at the joint portion of the leads can be improved, disconnection of the leads after bonding can be prevented, and a highly reliable chip-sized semiconductor device can be obtained. Further, according to the wiring pattern film of the present invention, it is possible to perform reliable bonding to the electrode terminal of the semiconductor chip, and it is possible to improve workability and the like.

[Brief description of drawings]

FIG. 1 is an explanatory view showing a method of bonding a lead of a wiring pattern film to an electrode terminal.

FIG. 2 is an enlarged perspective view showing a lead portion in a state where a wiring pattern film is bonded to a semiconductor chip.

FIG. 3 is a perspective view and a sectional view of a tool end of a bonding tool.

FIG. 4 is a perspective view of a tool end of a bonding tool.

FIG. 5 is an enlarged perspective view showing a lead bonding portion.

FIG. 6 is a partial cross-sectional view showing an engaging portion formed on a lead.

FIG. 7 is a perspective view of a tool end in another example of the bonding tool.

FIG. 8 is an enlarged perspective view showing a bonding portion of a lead.

FIG. 9 is a plan view showing the shape of a lead provided with a notch portion.

FIG. 10 is an explanatory diagram showing a method for manufacturing a wiring pattern film.

FIG. 11 is a plan view of a wiring pattern film.

FIG. 12 is a cross-sectional view of a state in which a wiring pattern film is bonded to a semiconductor chip.

FIG. 13 is an explanatory view showing another method for manufacturing a wiring pattern film.

FIG. 14 is a sectional view showing a state in which a wiring pattern film is bonded to a semiconductor chip.

FIG. 15 is a plan view of the semiconductor device viewed from the external connection terminal formation surface.

FIG. 16 is a cross-sectional view showing a bonded state of a semiconductor chip and a lead of a wiring pattern film.

FIG. 17 is an explanatory view showing a method of joining the leads of the wiring pattern film to the electrode terminals.

FIG. 18 is an enlarged perspective view showing a lead portion in a state where a wiring pattern film is bonded to a semiconductor chip in a conventional example.

FIG. 19 is a perspective view of a tool end of a conventional bonding tool.

FIG. 20 is an enlarged perspective view showing a bonding portion of a conventional lead.

[Explanation of symbols]

 5 External Connection Terminals 6 Leads 8 Electrode Terminals 9 Wiring Patterns 10 Semiconductor Chips 12 Wiring Pattern Films 14 Adhesive Layers 16 Solder Resists 20 Insulating Films 22 Bonding Tools 22a Recesses 22b Protrusions 30 Engaging Protrusions 32 Engaging Recesses 34 Engaging Holes 36 Notches Part 40 Insulating film 42 Window 44 Copper foil 45, 46 Resist 48 Solder resist 50 Gold plating layer 60 Single-sided copper-clad film 62 Gold plating layer 64 Connection hole

Claims (7)

[Claims] 1. A wiring pattern formed on a surface of an electrode terminal of a semiconductor chip, one end of which is formed in a terminal portion forming an external connection terminal, and the other end of which is formed in a lead connecting to the electrode terminal forms the lead. A wiring pattern film formed by being supported by an insulating film as a window with the portion formed as a window, the surface forming the external connection terminal as an outer surface, the electrode terminal is exposed and bonded at the window portion, and the wiring pattern film A lead supported by an insulating film at both ends of the window portion is pushed down from above the lead by a bonding tool and the lead is cut by the end face of the bonding tool. In a method for manufacturing a semiconductor device, in which a lead end is aligned and bonded to the electrode terminal while bending The method of manufacturing a semiconductor device, wherein the an end face of the Ingutsuru bonding tool to bonding uneven engagement engaged the abutment surface of the lead abutting. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the bonding tool is one in which a peripheral edge portion of an end face which is in contact with the lead is formed into a smooth curved surface. 3. The wiring pattern film having an engaging projection provided on a lead surface with which the bonding tool abuts is used, and the bonding tool provided with a concave portion which engages with the engaging projection unevenly on an end surface. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the method is used. 4. The wiring pattern film is provided with an engaging concave portion or an engaging hole penetrating the lead on the lead surface with which the bonding tool abuts, and the bonding tool is concave and convex engaging with the engaging concave portion. 3. An engaging projection which is formed on the end face of the engaging hole, or a projection which is fitted into the engaging hole in a concavo-convex manner is used.
The manufacturing method of the semiconductor device described in the above. 5. A wiring pattern, which has one end formed on a terminal portion forming an external connection terminal and the other end formed on a lead connecting to the electrode terminal, forms the lead on a surface of the semiconductor chip on which the electrode terminal is formed. A wiring pattern film formed by being supported by an insulating film as a window with the portion formed as a window, the surface forming the external connection terminal as an outer surface, the electrode terminal is exposed and bonded at the window portion, and the wiring pattern film A lead supported by an insulating film at both ends of the window portion is pushed down from above the lead by a bonding tool and the lead is cut by the end face of the bonding tool. A wiring pattern used in the manufacture of a semiconductor device in which a lead end is aligned with and bonded to the electrode terminal while bending In emission film, the bonding tool end surface and the concavo-convex engaging engagement projections of the bonding tool to the lead in contact with the wiring, characterized in that a engagement recess or engagement hole pattern film. 6. The wiring pattern film according to claim 5, wherein notches formed by cutting the leads in the width direction are provided at the cutting positions of the leads. 7. The wiring pattern film according to claim 6, wherein the lead portion on the front side of the cutting position of the notch portion is formed wider than a predetermined lead width.