JPH09229963A - Contact body for inspecting electronic parts, manufacture thereof, and inspecting method using the contact body - Google Patents
Contact body for inspecting electronic parts, manufacture thereof, and inspecting method using the contact bodyInfo
- Publication number
- JPH09229963A JPH09229963A JP3642896A JP3642896A JPH09229963A JP H09229963 A JPH09229963 A JP H09229963A JP 3642896 A JP3642896 A JP 3642896A JP 3642896 A JP3642896 A JP 3642896A JP H09229963 A JPH09229963 A JP H09229963A
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- contact body
- inspecting
- ball
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体チップ等の電
子部品の電気的な検査を行う際に使用する検査装置にお
ける電子部品検査用接触体とその製造方法およびそれを
用いた検査方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact body for inspecting an electronic component in an inspection device used for electrically inspecting an electronic component such as a semiconductor chip, a method of manufacturing the same, and an inspection method using the same. Is.
【０００２】[0002]
【従来の技術】従来、半導体ＬＳＩの電気的な検査は、
ウェハ状態で行われていた。しかし、電子機器メーカで
は、実装機器の小型化，高機能化を図るため、パッケー
ジングされた半導体ＬＳＩではなく、単体のベアの半導
体チップを直接入手して、半導体チップを電子機器の回
路基板に直接実装するベアチップ実装が取り入れられて
いる。2. Description of the Related Art Conventionally, electrical inspection of a semiconductor LSI has been
It was performed in a wafer state. However, in order to reduce the size and increase the functionality of mounted devices, electronic device manufacturers directly obtain a single bare semiconductor chip instead of a packaged semiconductor LSI and use the semiconductor chip as a circuit board of the electronic device. Bare chip mounting, which is directly mounted, is adopted.
【０００３】これに対し、半導体メーカでは、作成され
た半導体ウェハを個々の半導体チップに分割し、電気的
な特性検査を行い、電子機器メーカへ供給している。こ
のような背景のもと、個々に分離された半導体チップの
検査は、図３に示すメンブレンシート３０が用いられて
いる。メンブレンシート３０は、図３（Ａ）に示すよう
に、シート３１と、シート３１に形成した突起電極３２
と、突起電極３２から延設した配線層３３から形成され
ている。シート３１は、耐熱性ならびに絶縁性のある例
えばポリイミド等にて形成されている。また、突起電極
３２は、図３（Ｂ）に示すように、半導体チップ３４の
素子電極３５と相対した位置に設けられている。On the other hand, a semiconductor maker divides the produced semiconductor wafer into individual semiconductor chips, inspects them for electrical characteristics, and supplies them to electronic equipment makers. Against this background, the membrane sheet 30 shown in FIG. 3 is used for the inspection of the individual semiconductor chips. As shown in FIG. 3A, the membrane sheet 30 includes a sheet 31 and a protruding electrode 32 formed on the sheet 31.
And the wiring layer 33 extending from the protruding electrode 32. The sheet 31 is formed of, for example, polyimide having heat resistance and insulation. Further, the protruding electrode 32 is provided at a position facing the element electrode 35 of the semiconductor chip 34, as shown in FIG.
【０００４】半導体チップ３４の電気的検査は、図３
（Ｂ）に示すように、シート３１に形成された突起電極
３２と半導体チップ３４の素子電極３５の位置合わせを
行い、図３（Ｃ）に示すように、シート３１を降下さ
せ、突起電極３２と素子電極３５とを接触させ、シート
３１を加圧手段３６により加圧し、その状態で配線層３
３に接続した測定器（図示せず）により半導体チップ３
４の電気的検査を行う。The electrical inspection of the semiconductor chip 34 is shown in FIG.
As shown in FIG. 3B, the protruding electrodes 32 formed on the sheet 31 and the element electrodes 35 of the semiconductor chip 34 are aligned with each other, and the sheet 31 is moved downward as shown in FIG. And the element electrode 35 are brought into contact with each other, the sheet 31 is pressed by the pressing means 36, and in that state, the wiring layer 3
Semiconductor chip 3 by a measuring device (not shown) connected to
4. Conduct electrical inspection.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、ベアの
半導体チップ３４の検査に用いるメンブレンシート３０
では下記の課題を有していた。 メンブレンシート３０の製造工程では、半導体チッ
プ３４の微小な素子電極３５に相対する突起電極３２
と、突起電極３２から延設する微細な配線層３３を高精
度に形成しなければならないため、配線のパターニング
を行うための配線エッチング用フォトマスクや感光性材
料が必要となり、さらに製造設備として露光，現像設備
が必要となる。また、微小な突起電極３２を高精度に形
成するためのめっき技術やめっき設備等も必要となり、
製造コストが著しく高騰する。However, the membrane sheet 30 used for the inspection of the bare semiconductor chip 34 is used.
Then, it had the following problems. In the manufacturing process of the membrane sheet 30, the protruding electrodes 32 facing the minute element electrodes 35 of the semiconductor chip 34
Since the fine wiring layer 33 extending from the bump electrode 32 must be formed with high precision, a photomask for wiring etching and a photosensitive material for patterning the wiring are required. ， Development equipment is required. In addition, a plating technique or plating equipment for forming the minute protruding electrodes 32 with high accuracy is required,
Manufacturing costs rise significantly.
【０００６】 メンブレンシート３０の製造工程が多
岐にわたるため、製造期間が長期化する。 半導体チップ３４の素子電極３５と接触する突起電
極３２は、Ｎｉ等の比較的硬度が高い材料で構成される
ため、メンブレンシート３０の突起電極３２と半導体チ
ップ３４の素子電極３５とを接触・加圧した際、半導体
チップ３４の素子電極３５が損傷し、半導体チップ３４
のワイヤボンディングのボンディング強度の劣化を引き
起こし、電子機器の信頼性を著しく低下させ、さらには
半導体チップ３４の素子電極３５直下のシリコン基板に
ダメージを及ぼし、半導体チップ３４の歩留りを著しく
損なうことがあった。Since the manufacturing process of the membrane sheet 30 is diverse, the manufacturing period becomes long. Since the protruding electrode 32 that comes into contact with the device electrode 35 of the semiconductor chip 34 is made of a material having a relatively high hardness such as Ni, the protruding electrode 32 of the membrane sheet 30 and the device electrode 35 of the semiconductor chip 34 are contacted and applied. When pressed, the element electrode 35 of the semiconductor chip 34 is damaged and the semiconductor chip 34
In some cases, the bonding strength of the wire bonding may be deteriorated, the reliability of the electronic device may be significantly reduced, and the silicon substrate immediately below the element electrode 35 of the semiconductor chip 34 may be damaged to significantly reduce the yield of the semiconductor chip 34. It was
【０００７】したがって、この発明の目的は、製造コス
トが安価で製造期間も短く、かつ電気的検査にて電子部
品が損傷することのない電子部品検査用接触体とその製
造方法およびそれを用いた検査方法を提供することであ
る。Therefore, an object of the present invention is to provide a contact body for inspecting an electronic component, which has a low manufacturing cost, a short manufacturing period, and in which an electronic component is not damaged by an electrical inspection, a method for manufacturing the same, and a method for manufacturing the same. It is to provide an inspection method.
【０００８】[0008]
【課題を解決するための手段】請求項１記載の電子部品
検査用接触体は、電子部品の電気的検査を行う検査装置
における電子部品検査用接触体であって、弾性樹脂と、
この弾性樹脂に一部を埋設した外部端子と、この外部端
子に接続して弾性樹脂に埋設し先端に弾性樹脂から露出
し電子部品の素子電極に相対するＡｕボールを形成した
Ａｕワイヤとを備えたものである。A contact body for inspecting electronic parts according to claim 1 is a contact body for inspecting electronic parts in an inspection device for electrically inspecting electronic parts, comprising an elastic resin.
An external terminal partially embedded in the elastic resin, and an Au wire connected to the external terminal and embedded in the elastic resin and having an Au ball formed at the tip and exposed from the elastic resin and facing the element electrode of the electronic component are provided. It is a thing.
【０００９】請求項２記載の電子部品検査用接触体は、
請求項１において、Ａｕボールの露出部を研磨仕上げと
したことを特徴とするものである。請求項３記載の電子
部品検査用接触体の製造方法は、電子部品の近傍に外部
端子を設置し、電子部品の素子電極と外部端子をＡｕワ
イヤにてボールボンディングし、Ａｕワイヤならびに外
部端子の一部を弾性樹脂にてモールディングし、弾性樹
脂から電子部品を剥離し素子電極に相対するＡｕボール
の一部を弾性樹脂から露出させるものである。The contact body for inspecting electronic parts according to claim 2 is
In Claim 1, the exposed portion of the Au ball is polished and finished. The method of manufacturing a contact body for inspecting electronic parts according to claim 3, wherein an external terminal is installed in the vicinity of the electronic part, and the element electrode of the electronic part and the external terminal are ball-bonded with an Au wire to form the Au wire and the external terminal. A part is molded with an elastic resin, the electronic component is separated from the elastic resin, and a part of the Au ball facing the element electrode is exposed from the elastic resin.
【００１０】請求項１，２，３記載の電子部品検査用接
触体とその製造方法によると、電子部品の素子電極と外
部端子とをＡｕワイヤにてボールボンディングしておい
て弾性樹脂にてモールディングし、電子部品を剥離して
電子部品検査用接触体が形成される。よって、従来のメ
ンブレンシートの作製工程で必要であった微小かつ微細
な突起電極形成のためのめっき工程や、配線のパターニ
ングを行うための配線エッチング用フォトマスクや感光
性材料が不要となり、さらに露光，現像等の大がかりな
製造設備も不要となり、極めて容易にかつ高精度に接触
体を形成することができる。According to the contact body for inspecting electronic parts and the manufacturing method thereof, the element electrodes of the electronic part and the external terminals are ball-bonded with Au wires and molded with elastic resin. Then, the electronic component is peeled off to form an electronic component inspection contact body. Therefore, the plating process for forming the minute and minute protruding electrodes, the photomask for wiring etching and the photosensitive material for patterning the wiring, which were required in the conventional manufacturing process of the membrane sheet, are not required, and the exposure The need for large-scale manufacturing equipment such as development is eliminated, and the contact body can be formed extremely easily and highly accurately.
【００１１】請求項４記載の検査方法は、請求項１また
は請求項２記載の電子部品検査用接触体を用いた検査方
法であって、外部端子の露出部に測定器を接続し、Ａｕ
ボールの露出部を電子部品の素子電極に接触させて弾性
樹脂を電子部品側に加圧し、測定器にて電子部品の電気
的な検査を行うものである。請求項４記載の接触体を用
いた電子部品の検査方法によると、電子部品の素子電極
に接触する電極が硬度の低いＡｕボールにて構成されて
いるため、電子部品の加圧・測定時に素子電極が損傷せ
ず、素子電極直下のシリコン基板へのダメージも皆無と
なる。また、Ａｕワイヤならびに外部端子を弾性樹脂に
てモールディングしたので、電子部品の加圧・測定時
に、電子部品の表面全体を弾性樹脂にて押圧し、素子電
極に集中応力が作用しない。しかも、モールド樹脂が弾
性樹脂製であるので、電子部品の加圧・測定時に、電子
部品の表面がモールド樹脂にて損傷するのを防止でき
る。An inspection method according to a fourth aspect is an inspection method using the contact body for inspecting an electronic component according to the first or second aspect, wherein a measuring device is connected to the exposed portion of the external terminal, and Au is used.
The exposed portion of the ball is brought into contact with the element electrode of the electronic component, the elastic resin is pressed against the electronic component side, and the electrical inspection of the electronic component is performed with a measuring instrument. According to the method for inspecting an electronic component using the contact body according to claim 4, since the electrode contacting the element electrode of the electronic component is composed of an Au ball having a low hardness, the element is pressed when the electronic component is pressed and measured. The electrodes are not damaged, and there is no damage to the silicon substrate directly below the device electrodes. Further, since the Au wire and the external terminal are molded by the elastic resin, the entire surface of the electronic component is pressed by the elastic resin at the time of pressurizing and measuring the electronic component, and concentrated stress does not act on the element electrode. Moreover, since the mold resin is made of an elastic resin, it is possible to prevent the surface of the electronic component from being damaged by the mold resin when the electronic component is pressed and measured.
【００１２】[0012]
【発明の実施の形態】この発明の実施の形態を図１およ
び図２を用いて説明する。図１は、電子部品の電気的検
査を行う検査装置における電子部品検査用接触体（以
降、接触体と称する）の製造方法を示したものである。
図１中、１０は電子部品となる半導体チップ、１１は半
導体チップ１０に形成した素子電極、１６は接触体であ
り、接触体１６は外部端子１２，Ａｕワイヤ１３，Ａｕ
ボール１４，高弾性樹脂１５からなる。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a method for manufacturing an electronic component inspection contact body (hereinafter referred to as a contact body) in an inspection device that electrically inspects an electronic component.
In FIG. 1, 10 is a semiconductor chip which is an electronic component, 11 is an element electrode formed on the semiconductor chip 10, 16 is a contact body, and the contact body 16 is an external terminal 12, Au wire 13, Au.
The ball 14 and the high elastic resin 15 are used.
【００１３】まず、図１（Ａ）において、半導体チップ
１０の近傍に接触体１６の外部電極となる外部端子１２
を設置し、半導体チップ１０の個々の素子電極１１と外
部端子１２とをＡｕワイヤ１３を用いてボールボンディ
ングを行う。ボールボンディングは、Ａｕワイヤ１３の
先端を加熱溶融させてボール状に成形し、当該Ａｕボー
ル１４を半導体チップ１０の素子電極１１に接合する。
このときのＡｕボール１４と素子電極１１との接合力
は、ボールボンディング条件を最適化し、後の半導体チ
ップ１０の引きはがし時に容易に剥離する条件を抽出し
て決定し、半導体チップ１０のすべての素子電極１１と
外部端子１２とをボールボンディングする。First, in FIG. 1A, an external terminal 12 which serves as an external electrode of the contact body 16 is provided in the vicinity of the semiconductor chip 10.
And the individual element electrodes 11 of the semiconductor chip 10 and the external terminals 12 are ball-bonded using the Au wires 13. In ball bonding, the tip of the Au wire 13 is heated and melted to form a ball shape, and the Au ball 14 is bonded to the element electrode 11 of the semiconductor chip 10.
The bonding force between the Au ball 14 and the device electrode 11 at this time is determined by optimizing the ball bonding condition and extracting the condition that the semiconductor chip 10 is easily peeled at the time of subsequent peeling. The element electrode 11 and the external terminal 12 are ball-bonded.
【００１４】図１（Ｂ）において、半導体チップ１０の
全ての素子電極１１と外部端子１２とをボールボンディ
ングした後、Ａｕボール部１４を含むＡｕワイヤ１３と
外部端子１２の一部を高弾性樹脂１５にてモールディン
グする。高弾性樹脂１５は、例えば、化学的に安定で弾
性率が高い離型用のシリコーン樹脂を用いる。高弾性樹
脂１５の硬化後、図１（Ｃ）において、素子電極１１に
接合されたＡｕボール１４はボンディング条件の最適化
により容易に剥離し、半導体チップ１０の素子電極１１
と相対して高弾性樹脂１５中に埋め込まれた状態とな
る。したがって、高弾性樹脂１５のａ面は半導体チップ
１０の表面が転写されたレプリカの状態となる。また、
高弾性樹脂１５のａ面には半導体チップ１０の素子電極
１１の配列と一致したＡｕボール１４がわずかに露出
し、外部端子１２に接続された接触電極が形成された半
導体チップ用の接触体１６が構成されるものである。な
お、Ａｕボール１４の露出部を研磨仕上げしてもよい。In FIG. 1B, after all the element electrodes 11 of the semiconductor chip 10 and the external terminals 12 are ball-bonded, the Au wires 13 including the Au ball portions 14 and a part of the external terminals 12 are made of a highly elastic resin. Mold at 15. As the high-elasticity resin 15, for example, a release silicone resin that is chemically stable and has a high elastic modulus is used. After the high-elasticity resin 15 is cured, the Au balls 14 bonded to the device electrodes 11 in FIG. 1C are easily separated by optimizing the bonding conditions, and the device electrodes 11 of the semiconductor chip 10 are removed.
It becomes a state of being embedded in the high-elasticity resin 15 opposite to. Therefore, the surface a of the high-elasticity resin 15 is in the state of a replica in which the surface of the semiconductor chip 10 is transferred. Also,
On the a surface of the high-elasticity resin 15, Au balls 14 corresponding to the arrangement of the device electrodes 11 of the semiconductor chip 10 are slightly exposed, and a contact body 16 for a semiconductor chip in which a contact electrode connected to the external terminal 12 is formed. Is configured. The exposed portion of the Au ball 14 may be polished and finished.
【００１５】次に、図２を用いて、接触体１６を備えた
検査装置による半導体チップ１０の電気的な検査方法に
ついて説明する。図２（Ａ）において、検査を行う半導
体チップ１０の素子電極１１と接触体１６のＡｕボール
１４とを位置合わせするため、接触体１６をＸ−Ｙ方向
に移動させ（矢印ｂ方向）、位置調整を行う。Next, a method of electrically inspecting the semiconductor chip 10 by the inspecting apparatus having the contact body 16 will be described with reference to FIG. In FIG. 2A, in order to align the element electrode 11 of the semiconductor chip 10 to be inspected with the Au ball 14 of the contact body 16, the contact body 16 is moved in the XY direction (arrow b direction), and the position is changed. Make adjustments.
【００１６】両者の位置合わせが完了後、接触体１６を
降下させ（矢印ｃ方向）、図２（Ｂ）において、半導体
チップ１０の素子電極１１と接触体１６のＡｕボール１
４とを接触させ、高弾性樹脂１５を半導体チップ１０側
に加圧する（矢印ｄ方向）。その状態で外部端子１２に
接続された測定器（図示せず）により、半導体チップ１
０の電気的検査を行う。After the alignment of the two is completed, the contact body 16 is lowered (in the direction of arrow c), and the element electrode 11 of the semiconductor chip 10 and the Au ball 1 of the contact body 16 are shown in FIG. 2B.
4, and the high-elasticity resin 15 is pressed against the semiconductor chip 10 side (arrow d direction). In that state, the semiconductor chip 1 is measured by a measuring device (not shown) connected to the external terminal 12.
Conduct an electrical test of 0.
【００１７】半導体チップ１０の電気的検査完了後、図
２（Ｃ）において、接触体１６を上昇させ（矢印ｅ方
向）、新たな半導体チップ１０の電気的検査を同様にし
て行う。このように構成された電子部品検査用接触体１
６とその製造方法によると、半導体チップ１０の素子電
極１１と外部端子１２とをＡｕワイヤ１３にてボールボ
ンディングしておいて高弾性樹脂１５にてモールディン
グし、半導体チップ１０を剥離して接触体１６が形成さ
れる。よって、従来のメンブレンシートの作製工程で必
要であった微小かつ微細な突起電極形成のためのめっき
工程や、配線のパターニングを行うための配線エッチン
グ用フォトマスクや感光性材料が不要となり、さらに露
光，現像等の大がかりな製造設備も不要となり、極めて
容易にかつ高精度に接触体１６を形成することができ、
接触体１６の製造コスト，製造期間を大幅に低減するこ
とができる。よって、マイコン，ゲートアレイ等の開発
サイクルの短い半導体チップに柔軟に対応でき、ベアチ
ップの供給体制を迅速、かつ的確に整えることができ
る。After the electrical inspection of the semiconductor chip 10 is completed, in FIG. 2C, the contact body 16 is raised (in the direction of arrow e), and an electrical inspection of a new semiconductor chip 10 is performed in the same manner. The electronic component inspection contact body 1 configured as described above
6 and the manufacturing method thereof, the element electrode 11 of the semiconductor chip 10 and the external terminal 12 are ball-bonded with the Au wire 13 and molded with the high-elasticity resin 15, and the semiconductor chip 10 is peeled off to form a contact body. 16 is formed. Therefore, the plating process for forming the minute and minute protruding electrodes, the photomask for wiring etching and the photosensitive material for patterning the wiring, which were required in the conventional manufacturing process of the membrane sheet, are not required, and the exposure , Large-scale manufacturing equipment such as development is not required, and the contact body 16 can be formed extremely easily and highly accurately.
The manufacturing cost and the manufacturing period of the contact body 16 can be significantly reduced. Therefore, it is possible to flexibly deal with semiconductor chips such as microcomputers and gate arrays, which have a short development cycle, and to quickly and accurately prepare the bare chip supply system.
【００１８】また、電子部品検査用接触体１６を用いた
検査方法によると、半導体チップ１０の素子電極１１に
接触する電極が硬度の低いＡｕボール１４にて構成され
ているため、半導体チップ１０の加圧・測定時に素子電
極１１が損傷せず、電子機器実装時におけるワイヤボン
ディングのボンディング強度劣化が皆無となり、品質の
高い半導体チップ１０が実現でき、電子機器の信頼性を
向上させることができる。また、半導体チップ１０の素
子電極１１直下のシリコン基板へのダメージも皆無とな
り、半導体チップ１０の検査工程における半導体チップ
１０の歩留りを向上できる。Further, according to the inspection method using the electronic component inspection contact body 16, since the electrode contacting the element electrode 11 of the semiconductor chip 10 is composed of the Au ball 14 having low hardness, the semiconductor chip 10 of The element electrode 11 is not damaged during the pressurization / measurement, the bonding strength of wire bonding is not deteriorated when the electronic device is mounted, a high quality semiconductor chip 10 can be realized, and the reliability of the electronic device can be improved. Further, the silicon substrate immediately below the element electrode 11 of the semiconductor chip 10 is not damaged at all, and the yield of the semiconductor chips 10 in the inspection process of the semiconductor chips 10 can be improved.
【００１９】さらに、Ａｕワイヤ１３ならびに外部端子
１２を高弾性樹脂１５にてモールディングしたので、電
子部品１０の加圧・測定時に、電子部品１０の表面全体
を高弾性樹脂１５にて押圧し、素子電極１１に集中応力
が作用せず、素子電極１１の損傷を防ぐことができる。
しかも、モールド樹脂が高弾性樹脂１５からなるので、
電子部品１０の加圧・測定時に、電子部品１０の表面が
モールド樹脂にて損傷するのを防止できる。Furthermore, since the Au wire 13 and the external terminal 12 are molded with the high-elasticity resin 15, the entire surface of the electronic component 10 is pressed with the high-elasticity resin 15 when the electronic component 10 is pressed and measured. The concentrated stress does not act on the electrode 11, and the element electrode 11 can be prevented from being damaged.
Moreover, since the molding resin is made of the highly elastic resin 15,
It is possible to prevent the surface of the electronic component 10 from being damaged by the molding resin when the electronic component 10 is pressed and measured.
【００２０】[0020]
【発明の効果】請求項１，２，３記載の電子部品検査用
接触体とその製造方法によると、電子部品の素子電極と
外部端子とをＡｕワイヤにてボールボンディングしてお
いて弾性樹脂にてモールディングし、電子部品を剥離し
て電子部品検査用接触体が形成される。よって、従来の
メンブレンシートの作製工程で必要であった微小かつ微
細な突起電極形成のためのめっき工程や、配線のパター
ニングを行うための配線エッチング用フォトマスクや感
光性材料が不要となり、さらに露光，現像等の大がかり
な製造設備も不要となり、極めて容易にかつ高精度に接
触体を形成することができ、接触体の製造コスト，製造
期間を大幅に低減することができるという効果が得られ
る。According to the contact body for inspecting electronic parts and the method for manufacturing the same of claims 1, 2 and 3, the element electrodes of the electronic part and the external terminals are ball-bonded with Au wires and the elastic resin is formed. And the electronic component is peeled off to form an electronic component inspection contact body. Therefore, the plating process for forming the minute and minute protruding electrodes, the photomask for wiring etching and the photosensitive material for patterning the wiring, which were required in the conventional manufacturing process of the membrane sheet, are not required, and the exposure The need for large-scale manufacturing equipment such as development is eliminated, the contact body can be formed extremely easily and highly accurately, and the manufacturing cost and the manufacturing period of the contact body can be greatly reduced.
【００２１】請求項４記載の接触体を用いた電子部品の
検査方法によると、電子部品の素子電極に接触する電極
が硬度の低いＡｕボールにて構成されているため、電子
部品の加圧・測定時に素子電極が損傷せず、電子機器実
装時におけるワイヤボンディングのボンディング強度劣
化が皆無となり、品質の高い電子部品が実現でき、電子
機器の信頼性を向上させることができる。また、素子電
極直下のシリコン基板へのダメージも皆無となり、電子
部品の検査工程における電子部品の歩留りを向上でき
る。また、Ａｕワイヤならびに外部端子を弾性樹脂にて
モールディングしたので、電子部品の加圧・測定時に、
電子部品の表面全体を弾性樹脂にて押圧し、素子電極に
集中応力が作用せず、素子電極の損傷を防ぐことができ
る。しかも、モールド樹脂が弾性樹脂製であるので、電
子部品の加圧・測定時に、電子部品の表面がモールド樹
脂にて損傷するのを防止できるという効果が得られる。According to the method for inspecting an electronic component using the contact body according to the fourth aspect, since the electrode contacting the element electrode of the electronic component is formed of Au balls having low hardness, the pressure applied to the electronic component The element electrode is not damaged during the measurement, the bonding strength of wire bonding is not deteriorated when the electronic device is mounted, a high quality electronic component can be realized, and the reliability of the electronic device can be improved. Further, damage to the silicon substrate directly below the device electrode is eliminated, and the yield of electronic components in the electronic component inspection process can be improved. Also, since the Au wire and the external terminal are molded with elastic resin,
Since the entire surface of the electronic component is pressed by the elastic resin, concentrated stress does not act on the element electrode, and damage to the element electrode can be prevented. In addition, since the mold resin is made of an elastic resin, it is possible to prevent the surface of the electronic component from being damaged by the mold resin when the electronic component is pressed and measured.
【図１】この発明の実施の形態における接触体の製造工
程を示す断面図である。FIG. 1 is a cross-sectional view showing a manufacturing process of a contact body according to an embodiment of the present invention.
【図２】この発明の実施の形態における半導体チップの
検査工程を示す断面図である。FIG. 2 is a sectional view showing a step of inspecting a semiconductor chip according to the embodiment of the present invention.
【図３】従来例における半導体チップの検査工程を示す
断面図である。FIG. 3 is a cross-sectional view showing a semiconductor chip inspection process in a conventional example.
１０ 半導体チップ（電子部品） １１ 素子電極 １２ 外部端子 １３ Ａｕワイヤ １４ Ａｕボール １５ 高弾性樹脂 １６ 接触体 10 Semiconductor Chip (Electronic Component) 11 Element Electrode 12 External Terminal 13 Au Wire 14 Au Ball 15 High Elasticity Resin 16 Contact Body
Claims (4)
おける電子部品検査用接触体であって、 弾性樹脂と、この弾性樹脂に一部を埋設した外部端子
と、この外部端子に接続して前記弾性樹脂に埋設し先端
に前記弾性樹脂から露出し前記電子部品の素子電極に相
対するＡｕボールを形成したＡｕワイヤとを備えた電子
部品検査用接触体。1. A contact body for inspecting an electronic component in an inspection device for electrically inspecting an electronic component, comprising: an elastic resin, an external terminal partially embedded in the elastic resin, and an external terminal connected to the external terminal. A contact body for inspecting an electronic component, comprising an Au wire embedded in the elastic resin and having a tip exposed from the elastic resin and having an Au ball facing the element electrode of the electronic component.
ことを特徴とする請求項１記載の電子部品検査用接触
体。2. The contact body for inspecting electronic parts according to claim 1, wherein the exposed portion of the Au ball is finished by polishing.
程と、前記電子部品の素子電極と前記外部端子をＡｕワ
イヤにてボールボンディングする工程と、前記Ａｕワイ
ヤならびに前記外部端子の一部を弾性樹脂にてモールデ
ィングする工程と、前記弾性樹脂から前記電子部品を剥
離し前記素子電極に相対するＡｕボールの一部を前記弾
性樹脂から露出させる工程とを含む電子部品検査用接触
体の製造方法。3. A step of installing an external terminal in the vicinity of an electronic component, a step of ball-bonding an element electrode of the electronic component and the external terminal with an Au wire, and a step of forming a part of the Au wire and the external terminal. A method of manufacturing a contact body for inspecting an electronic component, comprising: a step of molding with an elastic resin; and a step of peeling the electronic component from the elastic resin and exposing a part of an Au ball facing the element electrode from the elastic resin. .
検査用接触体を用いた検査方法であって、外部端子の露
出部に測定器を接続し、Ａｕボールの露出部を電子部品
の素子電極に接触させて弾性樹脂を前記電子部品側に加
圧し、前記測定器にて前記電子部品の電気的な検査を行
う検査方法。4. An inspection method using the contact body for inspecting electronic parts according to claim 1 or 2, wherein a measuring device is connected to the exposed part of the external terminal, and the exposed part of the Au ball is connected to the electronic part. An inspection method in which an elastic resin is brought into contact with an element electrode to apply pressure to the electronic component side, and the electronic instrument is electrically inspected by the measuring device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03642896A JP3307823B2 (en) | 1996-02-23 | 1996-02-23 | Manufacturing method of contact parts for electronic component inspection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03642896A JP3307823B2 (en) | 1996-02-23 | 1996-02-23 | Manufacturing method of contact parts for electronic component inspection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09229963A true JPH09229963A (en) | 1997-09-05 |
| JP3307823B2 JP3307823B2 (en) | 2002-07-24 |
Family
ID=12469553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03642896A Expired - Fee Related JP3307823B2 (en) | 1996-02-23 | 1996-02-23 | Manufacturing method of contact parts for electronic component inspection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3307823B2 (en) |
Cited By (10)
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|---|---|---|---|---|
| JPH11211754A (en) * | 1998-01-30 | 1999-08-06 | Shin Etsu Polymer Co Ltd | Electric connector and its manufacture |
| US6452406B1 (en) | 1996-09-13 | 2002-09-17 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips |
| US6528984B2 (en) | 1996-09-13 | 2003-03-04 | Ibm Corporation | Integrated compliant probe for wafer level test and burn-in |
| US7282945B1 (en) | 1996-09-13 | 2007-10-16 | International Business Machines Corporation | Wafer scale high density probe assembly, apparatus for use thereof and methods of fabrication thereof |
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1996
- 1996-02-23 JP JP03642896A patent/JP3307823B2/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7368924B2 (en) | 1993-04-30 | 2008-05-06 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips projecting from a support surface, apparatus for use thereof and methods of fabrication thereof |
| US6452406B1 (en) | 1996-09-13 | 2002-09-17 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips |
| US6528984B2 (en) | 1996-09-13 | 2003-03-04 | Ibm Corporation | Integrated compliant probe for wafer level test and burn-in |
| US7282945B1 (en) | 1996-09-13 | 2007-10-16 | International Business Machines Corporation | Wafer scale high density probe assembly, apparatus for use thereof and methods of fabrication thereof |
| JPH11211754A (en) * | 1998-01-30 | 1999-08-06 | Shin Etsu Polymer Co Ltd | Electric connector and its manufacture |
| JP2014112072A (en) * | 2012-11-05 | 2014-06-19 | Shinko Electric Ind Co Ltd | Probe card and manufacturing method for the same |
| US20140125372A1 (en) * | 2012-11-05 | 2014-05-08 | Shinko Electric Industries Co., Ltd. | Probe card and method of manufacturing the same |
| US9488677B2 (en) * | 2012-11-05 | 2016-11-08 | Shinko Electric Industries Co., Ltd. | Probe card having a wiring substrate |
| JP2015021851A (en) * | 2013-07-19 | 2015-02-02 | 新光電気工業株式会社 | Probe card and manufacturing method thereof |
| JP2015021842A (en) * | 2013-07-19 | 2015-02-02 | 新光電気工業株式会社 | Probe card and manufacturing method thereof |
| US9470718B2 (en) | 2013-07-19 | 2016-10-18 | Shinko Electric Industries Co., Ltd. | Probe card |
| US9476913B2 (en) | 2013-07-19 | 2016-10-25 | Shinko Electric Industries Co., Ltd. | Probe card |
| JP2015099082A (en) * | 2013-11-19 | 2015-05-28 | 新光電気工業株式会社 | Probe card and method for manufacturing probe card |
| CN111751586A (en) * | 2019-03-29 | 2020-10-09 | 日本麦可罗尼克斯股份有限公司 | Probe body with multi-needle structure and probe card |
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| Publication number | Publication date |
|---|---|
| JP3307823B2 (en) | 2002-07-24 |
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