JPH09190905A - Thick film thermistor - Google Patents
Thick film thermistorInfo
- Publication number
- JPH09190905A JPH09190905A JP8018165A JP1816596A JPH09190905A JP H09190905 A JPH09190905 A JP H09190905A JP 8018165 A JP8018165 A JP 8018165A JP 1816596 A JP1816596 A JP 1816596A JP H09190905 A JPH09190905 A JP H09190905A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thermistor
- thick film
- comb
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は感温部に厚膜を使用した
サーミスタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermistor using a thick film for a temperature sensitive part.
【0002】[0002]
【従来の技術】従来の厚膜を使用したサーミスタは、電
極パターンを厚膜印刷により形成した上に厚膜サーミス
タ層を形成した後、サーミスタ膜をレーザー光を用いて
切断し抵抗値を調整していた。2. Description of the Related Art A conventional thermistor using a thick film is formed by forming a thick film thermistor layer on an electrode pattern formed by thick film printing, and then cutting the thermistor film with a laser beam to adjust the resistance value. Was there.
【0003】[0003]
【発明が解決しようとする課題】レーザー光でサーミス
タ膜を切断すると、レーザー光により高い熱がサーミス
タ膜にかかり、サーミスタの特性により抵抗値が変動
し、精密な抵抗値の素子作製が困難であった。When the thermistor film is cut by laser light, high heat is applied to the thermistor film by the laser light, and the resistance value fluctuates due to the characteristics of the thermistor, making it difficult to manufacture a device having a precise resistance value. It was
【0004】[0004]
【課題を解決するための手段】本発明は電極の構造を複
数の櫛形にし、この電極部分をレーザー光で切断するこ
とで、サーミスタ膜の温度変化を小さくし抵抗値調整を
行うため、精密な抵抗値の素子作製が可能となる。According to the present invention, since the electrode structure is made into a plurality of comb shapes and the electrode portions are cut by laser light, the temperature change of the thermistor film is reduced and the resistance value is adjusted. It is possible to manufacture an element having a resistance value.
【0005】[0005]
【作 用】本発明によるサーミスタは抵抗値調整工程
で電極部分を切断するためサーミスタ膜の熱による抵抗
値変化が小さく精密な抵抗値調整ができる。[Operation] Since the thermistor according to the present invention cuts the electrode portion in the resistance value adjusting step, the resistance value change due to heat of the thermistor film is small and the resistance value can be precisely adjusted.
【0006】[0006]
【実施例1】本発明の実施例を図面を用いて説明する。Embodiment 1 An embodiment of the present invention will be described with reference to the drawings.
【0007】 図1において2mm×1.25mm×
0.4mmtのアルミナ絶縁基板上にスパッタリング法
を用いて白金を0.5μmの厚さに着膜した後、白金膜
の安定化を図るために800℃で熱処理を行い電極層を
得た。In FIG. 1, 2 mm × 1.25 mm ×
After depositing platinum to a thickness of 0.5 μm on a 0.4 mmt alumina insulating substrate by a sputtering method, a heat treatment was performed at 800 ° C. to stabilize the platinum film to obtain an electrode layer.
【0008】 該着膜基体上にフォトレジストにより図
2に示す様な櫛部分の幅が50μmのパターンを作製し
た。A pattern having a comb portion width of 50 μm as shown in FIG. 2 was formed on the film-forming substrate by photoresist.
【0009】 この基体をミリングによりエッチング
後、フォトレジストを除去し、図3に示す電極を形成し
た。After etching this substrate by milling, the photoresist was removed to form the electrode shown in FIG.
【0010】 この電極の上に印刷法を用いて図4に示
す部分にサーミスタペーストを印刷、焼成し、厚さ15
μmのサーミスタ膜を得た。A thermistor paste is printed on the electrode on the portion shown in FIG.
A thermistor film of μm was obtained.
【0011】 図5に示す様に、この着膜基体の第1調
整部をレーザートリミングで切断し、抵抗値を所望の抵
抗の95%から100%に調整し、更に第2調整部を切
断して所望の抵抗値を得た。As shown in FIG. 5, the first adjusting portion of this film-forming substrate is cut by laser trimming, the resistance value is adjusted to 95% to 100% of the desired resistance, and the second adjusting portion is cut. To obtain a desired resistance value.
【0012】 抵抗値調整を行った素子を図6に示すよ
うにガラスを印刷、焼成しサーミスタ素子を作製した。The element whose resistance value was adjusted was printed with glass and baked as shown in FIG. 6 to manufacture a thermistor element.
【0013】[0013]
【発明の効果】本発明による方法で作製した10kΩB
特性4000Kのサーミスタ素子100個と従来の方法
で作製したサーミスタ100個の抵抗値ばらつきを表1
に示す。EFFECT OF THE INVENTION 10 kΩB produced by the method according to the present invention
Table 1 shows the variation in resistance between 100 thermistor elements with characteristics of 4000K and 100 thermistors manufactured by the conventional method.
Shown in
【図1】実施例1における素子の断面図である。FIG. 1 is a sectional view of an element according to a first exemplary embodiment.
【図2】実施例1における素子の上面図である。FIG. 2 is a top view of the element in Example 1.
【図3】実施例1における素子の上面図である。FIG. 3 is a top view of the element in Example 1.
【図4】実施例1における素子の上面図である。FIG. 4 is a top view of the element in Example 1.
【図5】実施例1における素子の上面図である。FIG. 5 is a top view of the element in Example 1.
【図6】実施例1における素子の上面図である。FIG. 6 is a top view of the element in Example 1.
1 アルミナ絶縁基板 2 白金膜 3 櫛部 4 フォトレジスト 5 サーミスタ膜 6 第1調整部 7 第2調整部 8 ガラス DESCRIPTION OF SYMBOLS 1 Alumina insulating substrate 2 Platinum film 3 Comb part 4 Photoresist 5 Thermistor film 6 1st adjusting part 7 2nd adjusting part 8 Glass
Claims (3)
上に厚膜ペーストを印刷した厚膜サーミスタにおいて、
電極の櫛形パターンを切断し抵抗値を調整することを特
徴とする厚膜サーミスタ。1. A thick film thermistor in which a thick film paste is printed on a plurality of comb-shaped electrodes formed on an insulating substrate,
A thick film thermistor characterized by cutting a comb pattern of electrodes to adjust a resistance value.
白金系合金を使用した厚膜サーミスタ。2. The electrode film according to claim 1, wherein the electrode film is platinum or
Thick film thermistor using platinum alloy.
た厚膜サーミスタ。3. A thick film thermistor according to claim 2, wherein the electrode film is a thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8018165A JPH09190905A (en) | 1996-01-08 | 1996-01-08 | Thick film thermistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8018165A JPH09190905A (en) | 1996-01-08 | 1996-01-08 | Thick film thermistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09190905A true JPH09190905A (en) | 1997-07-22 |
Family
ID=11964006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8018165A Pending JPH09190905A (en) | 1996-01-08 | 1996-01-08 | Thick film thermistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH09190905A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100444888B1 (en) * | 2002-02-18 | 2004-08-21 | 주식회사 쎄라텍 | Chip type varistor and fabrication method thereof |
JP5186007B2 (en) * | 2008-11-17 | 2013-04-17 | アルプス電気株式会社 | Thermistor and manufacturing method thereof |
JP2016131167A (en) * | 2015-01-13 | 2016-07-21 | 三菱マテリアル株式会社 | Method for adjusting resistance value of electronic device |
-
1996
- 1996-01-08 JP JP8018165A patent/JPH09190905A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100444888B1 (en) * | 2002-02-18 | 2004-08-21 | 주식회사 쎄라텍 | Chip type varistor and fabrication method thereof |
JP5186007B2 (en) * | 2008-11-17 | 2013-04-17 | アルプス電気株式会社 | Thermistor and manufacturing method thereof |
JP2016131167A (en) * | 2015-01-13 | 2016-07-21 | 三菱マテリアル株式会社 | Method for adjusting resistance value of electronic device |
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