JPH09181355A - Crystal growth method and semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To grow an excellent GaN crystal layer almost free from deffects on an SiC substrate. SOLUTION: A GaN layer is grown on the surface of a hydrogen-terminated 6H-SiC (0001) substrate. First, the surface of the 6H-SiC (0001) substrate 10 is terminated with hydrogen. The substrate is set in an MOCVD device and kept at a temperature of 1000 deg.C, and trimethyl gallium and ammonia are fed into the MOCVD device together with hydrogen carrier gas. By this method, a hetero-epitaxially growth of GaN single crystal thin film 11 is attained on the surface 12 of the SiC substrate 10.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,
The present invention relates to a method for growing a crystal of a compound semiconductor layer on silicon carbide and a semiconductor light emitting device.

[0002]

2. Description of the Related Art Epitaxial growth of silicon carbide (hereinafter referred to as SiC) on a silicon substrate has already been reported. For references, see Matsunami et al., IEEE Trans.Electron Devices ED-28, 1235 (198
There is 1).

[0003]

SUMMARY OF THE INVENTION The present invention provides a crystal growth method for growing a compound semiconductor such as GaN having a lattice constant different from that of SiC on a SiC crystal, and a semiconductor light emitting device using the compound semiconductor layer. The purpose is to

[0004]

In order to achieve the above object, the present invention provides a hydrogen-terminated SiC crystal,
The semiconductor light emitting device may include a GaN layer formed on the crystal, and the SiC crystal may be formed on a silicon substrate or a diamond substrate.

The semiconductor layer grown on the SiC crystal is generally AlxGayInzN (x + y + z = 1, 0 ≦.
A semiconductor layer represented by x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1) may be used.

The crystal growth method also uses a hydrogen-terminated SiC crystal. GaN on SiC
As a method of forming a layer, hydrogen terminated SiC
There is also a method in which a Ga film is thinly grown on a crystal, the Ga is nitrided to form a GaN thin film, a GaN layer is formed on the GaN thin film at a low temperature, and then the temperature is raised to achieve good crystallization. is there.

In addition, 3C-SiC is applied to the clean surface of the Si (001) substrate.
Epitaxially growing (001), and 3C-SiC
A step of epitaxially growing Si on (001),
By the step of epitaxially growing 3C-SiC (111) SiC on the Si surface, the plane orientation of the first layer of SiC and the second layer of SiC can be made different.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have found that SiC such as 6H, 4H, 3C, etc.
By removing oxide film and impurities from the surface of the substrate and cleaning it, dangling bonds of surface atoms are terminated with hydrogen to form a stabilized surface, so that the SiC substrate is made of materials other than SiC, such as GaN. It was confirmed that the material effectively functions as a substrate for heteroepitaxial growth of a single crystal. The method will be specifically described below.

(First Embodiment) As shown in FIG. 1, 6H or 4H, 3C, 15R, etc. single crystal SiC polished and smoothed
The surface 2 of the substrate 1 is washed with an organic solvent such as acetone, alcohol or tricloene to remove the organic substance. Further, it is washed by dipping it in a hydrofluoric acid solution to remove oxides. In this case, the surface is once oxidized to form an oxide film, and the oxide film is removed, whereby a substrate with few surface defects can be formed.

The cleaned SiC substrate was introduced into a vacuum apparatus, hydrogen gas was introduced into the vacuum chamber until a pressure of 1 × 10 −6 Torr or more was reached, and the SiC substrate 1 was heated in a hydrogen atmosphere.

The surface of the SiC substrate 1 heated to a temperature of 800 ° C. or higher reacts with hydrogen and is slightly etched to form a cleaner surface. In this case, hydrogen may only be introduced as a gas, but if atomic hydrogen cracked by a filament heated to 2000 ° C. or higher is supplied,
Lower substrate temperature 60 at lower gas pressure of 1x10-7 Torr
A clean surface could be formed even at 0 ° C.

On the clean SiC substrate surface 1 thus formed, there are no substances other than SiC such as oxides and impurities, and dangling bonds of SiC surface atoms are stabilized by hydrogen being terminated by hydrogen. Was there.

Particularly, the surface of the substrate 1 is 3C-SiC (111) plane or 6H,
In the case of the carbon surface corresponding to the 4H-SiC (0001) surface, as shown in FIG. 2, the dangling bond 4 of the carbon 3 having the carbon surface is terminated by hydrogen 5 and stabilized, and is smooth and clean. The surface was obtained.

The bond between carbon and hydrogen begins to decompose above a temperature of about 1100 ° C. and is stable below this temperature.
Therefore, it is better to use the carbon dangling bond for the crystal growth that requires raising the temperature to about 1000 ° C. That is, it is better to use the carbon surface of the SiC substrate.

On the other hand, the bond between Si and hydrogen is decomposed at a temperature of about 600 ° C. or higher, and hydrogen is released from the surface, so that stabilization is not maintained. Therefore, at the temperature of 800 ° C above, the surface is S
In the case of i-plane, Si reacts with hydrogen and is actively etched,
It is difficult to obtain a stable surface. Therefore, at a temperature of 800 ° C, SiC
When crystal is grown on the substrate, it is better not to use the Si surface. On the other hand, on the carbon surface, 1000 ° C
Stable carbon-hydrogen bonds are retained even to some extent, and the surface is stabilized.

As shown in FIG. 3, when a single crystal thin film 6 is grown by heteroepitaxial growth using a substance different from the substrate 1 and the thin film, if the lattice matching is insufficient and the lattice mismatch is large, the ordinary substrate 1 and the thin film 6 are not formed. A large number of misfit dislocations 8 are formed at the heteroepitaxial interface having a strong interaction at the interface 7, and a good single crystal thin film cannot be obtained.

When a thin film is formed by using the surface of the SiC substrate terminated by hydrogen as in this embodiment, the interaction at the interface 7 between the substrate and the thin film acts via hydrogen, and therefore, it is directly performed. It is considered to be a weak interaction such as van der Waals force, rather than a bond of. It is considered that this weak interaction keeps the density of misfit dislocations generated at the interface 7 low and improves the performance of heteroepitaxial growth.

The term "terminated by hydrogen" means that hydrogen is bonded to the dangling bond emerging from the surface of the SiC substrate. And here, it is not necessary to completely bond all of the dangling bonds with hydrogen. For example, it was experimentally confirmed that even if about 30% of hydrogen is bonded to the dangling bond on the surface, it is effective.

If there is no substrate corresponding to the thin film to be grown, or if it is said that it is necessary to form the buffer layer 9 at the interface between the substrate 1 and the heteroepitaxial thin film 6 as shown in FIG. The hydrogen-terminated substrate surface of the invention worked effectively.

In this embodiment, 3C-SiC (111) is used as SiC.
Surface, α-SiC (0001) surface, but other surfaces, for example
The 3C-SiC (001) plane or the α-SiC (1210) plane is also effective.

(Second Embodiment) A method of growing a GaN crystal on the hydrogen-terminated SiC substrate described in the first embodiment will be described with reference to FIG.

The substrate is hydrogen terminated 6H-SiC (0001), and GaN is grown on the surface of this substrate. First, MOCV
D Hydrogen growth 6H- of Embodiment 1 is placed in the growth chamber of the device.
The SiC (0001) substrate 10 is installed. The substrate temperature is kept at 1000 ° C, and trimethylgallium (T
MG) and ammonia.

By this method, a buffer layer for growing a film at a low temperature was not formed, but 6H-SiC (0001) was used.
The GaN single crystal thin film 11 was heteroepitaxially grown on the surface 12.

A carbon surface was used as the termination surface 12 of the crystal on the 6H-SiC (0001) surface. Since the bond between carbon and hydrogen terminating carbon is strong, hydrogen terminating on the 6H-SiC (0001) surface is retained under the conditions of GaN film formation under a hydrogen atmosphere at a substrate temperature of 1000 ° C. Interface with GaN 12
Was formed. The GaN (0001) plane was grown on the 6H-SiC (0001) plane of the substrate to obtain a heteroepitaxial growth thin film. Ga
The N crystal 11 and the hydrogen-terminated SiC crystal 10 are in contact with each other, and the defect density of the GaN heteroepitaxial thin film 11 is 10 ⁹
It was below cm ^-2 . In this way, 6H-SiC (000
1) The hydrogen-terminated surface 12 relaxed the interface energy between the SiC and the heteroepitaxial GaN crystal, and suppressed the occurrence of the transition of the heteroepitaxial GaN crystal at the interface.

The direction of GaN is determined by its weak interaction with the surface of the substrate, but the surface of the crystal is determined by the surface energy of the substance itself. Therefore, the board
6H-SiC (0001) and heteroepitaxial GaN (0001) are in contact with each other at the atomic level, but the interface energy when different crystals are in contact is kept low. The suppression of crystal disorder at the interface enables heteroepitaxial growth with a low defect density.

In the case of heteroepitaxial growth in which a buffer layer is formed at the interface, the buffer layer reduces this interface energy. In the present invention, the effect of this buffer layer is realized by the hydrogen-terminated surface, which is an atomic layer, and it has better controllability, reproducibility, and interface cleanliness than the formation of the buffer layer, resulting in lower defects. It was possible to realize the growth of a high-performance heteroepitaxially grown single crystal thin film.

In order to form a device such as a GaN light emitting device, the substrate SiC is preferably n-type. The n-type conversion of SiC is achieved by doping N (nitrogen), for example.
Although the growth of GaN has been described here, Al _x Ga _y
The same growth can be performed with an In _z N (x + y + z = 1) crystal.

In the present embodiment, the 6H-SiC (0001) plane was described, but the 3C-SiC (111) plane equivalent to this plane, α-SiC including 4H, etc.
Is also effective for the (0001) plane, and other planes such as 3C-SiC
The (001) plane or the α-SiC (1210) plane was also effective.

Here, the hydrogen to the C dangling bond on the surface of the SiC substrate is about 40 percent. If it is 30 or more and less than 100%, the crystal growth of GaN on top of this is small in crystal defects. This is because GaN bonds to the C (carbon) dangling bond on the surface of SiC and crystal growth can be performed while maintaining the bond to the substrate, even if the dangling bond of C is as small as 1% or less. . On the other hand, if it is less than 30%, the number of dangling bonds terminated by hydrogen is small, and GaN is bonded to most of C, so that transition occurs in the GaN crystal on SiC. In this embodiment, the ratio of hydrogen is 30 or more and less than 100 percent. The value of this hydrogen terminator is the surface of the SiC substrate before GaN growth. By changing the substrate temperature and growth atmosphere during GaN growth, Ga
The ratio of terminating hydrogen existing at the N / SiC interface may decrease. For example, the GaN growth temperature is set to 120 during the growth.
When changed to 0 degree, the terminating hydrogen ratio is reduced to almost zero. In addition, the ratio of terminating hydrogen at the GaN / SiC interface decreases even if the temperature is raised after GaN growth.

(Third Embodiment) A method of growing SiC on Si and then growing GaN on it will be described.

As shown in FIG. 6, Si (001) (2x1) cleaned by heating to 900 ° C. or higher under high vacuum of 1 × 10-8 Torr or higher.
The background pressure on the surface of the substrate 13 is kept at 1 × 10 −7 Torr or less to suppress the contribution of gaseous carbon such as hydrocarbon to the surface of the Si substrate. For example, using an electron beam evaporator, 8 kV, 10
By irradiating an electron beam of about 0 mA to sublimate the molecular carbon and supply it to the surface of the Si substrate, the hetero-epitaxial silicon carbide thin film 15 is a steep interface where the SiC / Si interface 14 is in contact with the atomic level. Was formed.

In this case, the supply of molecular carbon to the Si surface 14 is started when the substrate temperature is 400 ° C. or lower, and S
The i substrate 13 is gradually heated while continuing to supply carbon.
Heated to above 900 ° C. Gaseous carbon reacts from reaction sites such as step edges and crystal defects existing on the substrate surface, and there are many problems such as twin crystals having different crystal orientations.

On the other hand, the above-mentioned Si by the supply of molecular carbon
The heteroepitaxial silicon carbide 15 formed by the carbonization treatment of the substrate surface 13 has a steep interface where the SiC / Si interface is in contact with each other at the atomic level, and contains almost no twins having different crystal orientations. confirmed.

Subsequent to the above carbonization treatment, Si was supplied from a Knudsen cell kept at about 1357 ° C., and at a substrate temperature of 1050 ° C.
Heteroepitaxial single crystal SiC when grown on SiC thin film
A thin film was obtained. A good single-phase single crystal thin film was obtained by setting the thickness of the heteroepitaxial SiC thin film to 100 Å or more.

Utilizing the surface of this heteroepitaxial single crystal SiC thin film functions as a silicon carbide substrate as in the first and second embodiments. That is, the surface of the SiC thin film is terminated by hydrogen, and Ga having few defects is formed on the surface.
N crystals can be grown. In this case, a Si wafer can be used as the original substrate.
It is much cheaper than using a substrate obtained by cutting and polishing a C single crystal.

Further, as for the cleavage technique required when forming a laser, etc., the cleavage of Si of the substrate is utilized.
By cleaving the GaN thin film formed on the Si substrate, it can be efficiently performed.

When a molecular carbon source was used to form SiC as in this embodiment, good crystallinity could be achieved even with a thin film thickness of about 100Å. That is, the carbon source is preferably molecular.

Here, the Si substrate used was effective on both the (001) and (111) planes, but if an off-cut substrate cut at an angle of about 0.05 to 10 degrees was used, a single-phase single crystal was used. Was effective for growing.

In order to form a device such as a GaN light emitting element, the substrate Si is preferably n-type, and the SiC halo epitaxial thin film formed on the surface is also preferably n-type. The n-type conversion of SiC is achieved by doping N (nitrogen), for example.

(Embodiment 4) Regarding a silicon carbide substrate in which a SiC heteroepitaxial thin film is grown on a Si substrate,
A method for controlling the crystal orientation of SiC in consideration of cleavage will be described as a fourth embodiment.

As shown in FIG. 7, cleaning of the Si (001) substrate 13 (2x1)
As in the third embodiment, the surface 14 has a 3C-SiC (001) surface 1
5 was heteroepitaxially grown.

On the 3C-SiC (001) surface 16, this time Si1
7 is heteroepitaxially grown, and further, its surface 1
Then, SiC19 was heteroepitaxially grown on the sample No. 8 again. Then, the crystal orientation of the 3C-SiC heteroepitaxial thin film 19 for the second time was the 3C-SiC (111) plane.

Further, a GaN crystal 21 is grown on this SiC 19. The growth temperature is about 1100 ° C. Si
The surface of C19 is a hydrogen terminated C plane.

This double heteroepitaxial growth SiC
The thin film effectively functions as the silicon carbide substrate described in the first, second and third embodiments.

The Si (001) planes have Si [110] cleavage directions perpendicular to each other. Therefore, regarding this cleavage, a heteroepitaxial thin film of a 3C-SiC (111) plane, and a heteroepitaxial thin film of another material corresponding to the 3C-SiC (111) plane of the GaN (0001) plane 21, which is further grown on the surface 20, Is also available and effective.

(Embodiment 5) The two-step growth of GaN, which is effective when performing heteroepitaxial growth of GaN on the hydrogen-terminated SiC surface described in Embodiment 1, will be described.

First, as shown in FIG. 8A, the substrate 10 having the hydrogen-terminated surface 12 is introduced into the GaN growth chamber and heated to 700 ° C. to supply trimethylgallium (TMG). A thin Ga thin film 22 having an atomic layer thickness is formed on the hydrogen-terminated SiC surface. The SiC substrate has a C surface.

At this time, nitrogen is not supplied and only gallium is supplied. After that, ammonia is supplied to nitride gallium and transform it into the GaN thin film 23 as shown in (b).

Further, the supply of trimethylgallium and ammonia was continued, and as shown in FIG.
Grow to a film thickness of about 00Å. G formed at this time
It was also confirmed that it is effective if the aN thin film 24 has an amorphous structure.

Next, the substrate temperature is raised to 1000.degree.
We will continue to grow GaN thin films. While the substrate temperature was rising, the crystallinity of the GaN thin film improved and the amorphous component also crystallized (d).
Heteroepitaxial single crystal GaN layer 25 as good as
Is obtained. The crystallinity of the GaN thin film grown at a substrate temperature of 1000 ° C. further improved with the growth, and a very good heteroepitaxial GaN thin film was grown.

The two-step growth of this embodiment is effective both when using a single-crystal SiC substrate and when using SiC that is heteroepitaxially grown on a Si substrate. 3C-
It is also effective for SiC (001) plane, 3C-SiC (111) plane, α-SiC (0001) plane, and other crystal planes.

(Sixth Embodiment) Next, the case where diamond is used as the substrate will be described.

As shown in FIG. 9, a diamond single crystal substrate 26
Was used to heteroepitaxially grow a SiC single crystal 28 on its surface 27, and this SiC surface 29 was hydrogen-terminated to form a substrate.

Heteroepitaxial growth of SiC on diamond can be achieved by heating the substrate to 1050 ° C. and supplying Si and C to the surface of the substrate. The growth conditions of the heteroepitaxial SiC thin film in this case were the same as those of the third embodiment, but no carbonization treatment was required.

On the surface of the SiC thin film formed on this diamond surface, for example, a GaN thin film 30 is formed according to the second or fifth embodiment.
Was heteroepitaxially grown. This heteroepitaxial thin film on the diamond surface is capable of being cleaved, and the thermal conductivity of diamond is higher than that of Si by one digit or more, so that it is suitable for high power operation. This is because the diamond substrate can efficiently release the heat generated by the high power operation. In addition, it was confirmed that the diamond single crystal substrate is also effective for a diamond polycrystalline substrate.

Further, as shown in FIG. 10, it is also effective to use the diamond thin film 32 formed on the Si substrate 31 or the diamond thin film heteroepitaxially grown on the diamond substrate.

In the heteroepitaxial growth on the Si substrate, a good heteroepitaxial thin film was obtained when the SiC thin film 33 was first formed on the Si substrate 31 and the diamond thin film 32 was grown on the surface thereof. Si of SiC in this case
For the heteroepitaxial growth on the substrate, the method described in the third embodiment was used.

The growth of diamond is performed by microwave CVD.
Using a plasma film forming apparatus, hydrogen gas containing, for example, 10% of CO was passed at 110 sccm at a pressure of about 4000 Pa to form a film with microwave power of 300 W. In this case, the substrate temperature was about 850 ° C., and a diamond thin film having a thickness of 1 μm was formed by film formation for one hour.

(Embodiment 7) By terminating the carbon dangling bonds on the diamond substrate surface 34 of FIG. 11 described in Embodiment 6 with hydrogen, the surface of SiC as described in Embodiment 6 is formed. It was confirmed that even a simple diamond that does not require growth can effectively function as an epitaxial substrate for the GaN thin film 35, for example.

That is, the surface of a diamond thin film formed on the surface of a diamond single crystal substrate or another substrate (such as a Si substrate) is exposed to hydrogen plasma to hydrogenate the surface, which can be used as the substrate of the present invention. .

Hydrogen plasma is generated under the same conditions by supplying only hydrogen without supplying a carbon source such as CO in the diamond thin film forming apparatus described in the sixth embodiment. A hydrogen-terminated substrate is formed by exposing the substrate. For example, GaN 35 was effectively heteroepitaxially grown on the hydrogen-terminated surface 34 as in the above embodiment.

(Embodiment 8) An embodiment in which a semiconductor light emitting device is manufactured using the above embodiment will be described.

First, after cleaning the n-type SiC (6H-SiC (0001)) substrate, it was set in a vacuum apparatus, and hydrogen gas was introduced into the vacuum chamber until a pressure of 1 × 10 −6 Torr or more was reached, and hydrogen was introduced. The n-type SiC substrate was heated in the atmosphere. The surface of the SiC substrate heated to a temperature of 800 ° C. or higher reacts with hydrogen and is slightly etched to form a cleaner surface. On the surface of the clean n-type SiC substrate formed in this manner, there are no substances other than SiC such as oxides and impurities.
The dangling bond of the surface atom was terminated by hydrogen and stabilized.

Next, the temperature of the n-type SiC substrate is maintained at 1000 ° C., and trimethylgallium (TMG) and ammonia are supplied together with the hydrogen carrier gas to obtain Ga.
The N single crystal thin film 11 is epitaxially grown. As the dopant, Si was used for n-type and Mg was used for p-type. That is, n-type GaN was obtained by introducing Si as a dopant during GaN crystal growth, and p-type GaN was obtained by subsequently introducing Mg. Finally, a p-type electrode was formed on the p-type GaN and an n-type electrode was formed on the n-type SiC substrate. Thus, the light emitting device using the GaN crystal formed on the n-type SiC substrate could be manufactured.

[0065]

According to the present invention, an effective SiC crystal for Heteroepitaxial growth of GaN or the like and a SuC substrate can be provided. In other words, the conventional method of growing a buffer layer or the like to alleviate the lattice mismatch and perform the heteroepitaxial growth is that the dangling bond on the surface of the SiC crystal or the SiC substrate is hydrogen terminated to form a heteroepitaxial growth single crystal with the crystal or the substrate surface. The interface energy with the thin film was kept low, enabling direct epitaxial growth. Therefore, the conventional buffer layer does not need to function as a crystal or substrate that enables heteroepitaxial growth with a low defect density.

In this case, it is most preferable that the crystal or the substrate surface is composed of carbon dangling bonds and hydrogen terminating the dangling bonds. This is because the carbon-hydrogen bond is stable, and this is the hydrogen-terminated surface of SiC or diamond.

[Brief description of the drawings]

FIG. 1 is a sectional view of a SiC substrate showing an embodiment.

FIG. 2 is a diagram showing an atomic structure of a substrate surface.

FIG. 3 is a cross-sectional view showing a heteroepitaxial single crystal thin film formed on a substrate surface.

FIG. 4 is a cross-sectional view showing a conventional heteroepitaxial growth thin film requiring a buffer phase.

FIG. 5 is a cross-sectional view showing a heteroepitaxial growth thin film according to a second embodiment.

FIG. 6 is a sectional view showing a SiC / Si substrate according to a third embodiment.

FIG. 7 is a sectional view showing a silicon carbide substrate having a layered structure according to a fourth embodiment.

FIG. 8 is a process diagram of two-step growth according to the fifth embodiment.

FIG. 9 is a cross-sectional view showing a substrate containing diamond according to a sixth embodiment.

FIG. 10 is a sectional view showing a diamond / Si substrate according to a sixth embodiment.

FIG. 11 is a sectional view showing a heteroepitaxial growth thin film on a diamond surface according to the seventh embodiment.

[Explanation of symbols]

 1 substrate 2 substrate surface 3 carbon surface atom 4 dangling bond 5 hydrogen 6 thin film 7 interface 8 misfit transition 9 buffer layer 10 SiC substrate 11 GaN single crystal thin film 12 SiC carbon termination surface 13 Si substrate 14 SiC / Si interface 15 SiC thin film 16 SiC thin film surface 17 Si thin film 18 Si thin film surface 19 Second layer SiC thin film 20 Second layer SiC thin film surface 21 GaN thin film 22 Ga thin film 23 GaN initial thin film 24 Low temperature grown GaN thin film 25 High temperature grown GaN thin film 26 Diamond substrate 27 Diamond surface 28 SiC thin film 29 SiC thin film surface 30 GaN thin film 31 Si substrate 32 Diamond thin film 33 SiC thin film 34 Diamond substrate surface 35 Heteroepitaxial growth thin film

Claims (13)

[Claims] 1. A semiconductor light emitting device comprising a hydrogen-terminated SiC crystal and a GaN layer formed on the crystal. 2. A semiconductor light emitting device comprising a silicon substrate, a SiC crystal formed on the substrate, and a GaN layer formed on the SiC crystal, wherein the surface of the SiC is terminated by hydrogen. 3. A GaN layer is replaced with AlxGayInzN (x
+ Y + z = 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1)
The semiconductor light emitting device according to claim 2, wherein a layer is used. 4. The semiconductor light emitting device according to claim 2, wherein an off substrate is used as the silicon substrate. 5. The semiconductor light emitting device according to claim 2, wherein a diamond substrate is used instead of the silicon substrate. 6. A silicon substrate, a first SiC crystal formed on the substrate, a Si crystal formed on the SiC crystal, a second SiC crystal formed on the Si crystal, and the SiC crystal. A semiconductor light emitting device comprising a GaN layer formed above, wherein the surface of the second SiC is terminated by hydrogen, and the crystal orientations of the first and second SiC are different. 7. The semiconductor light emitting device according to claim 1, wherein a C plane of SiC crystal is used. 8. A crystal growth method using a hydrogen terminated SiC crystal. 9. A crystal growth method comprising: a step of terminating an SiC crystal surface with hydrogen; and a step of growing a GaN crystal on the crystal surface. 10. AlxGayInzN in place of GaN crystal
(X + y + z = 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦
1) The crystal growth method according to claim 9, wherein the crystal is grown. 11. The crystal growth method according to claim 8, 9 or 10, wherein the hydrogen terminate is 30% or more and less than 100% of the dangling bond. 12. A hydrogen-terminated SiC crystal,
Growing a Ga film thinly; nitriding the Ga to form a GaN thin film; forming a GaN layer on the GaN thin film at a low temperature of 600 ° C. to 900 ° C .; Growth method including the step of heating the high quality GaN layer to 900 ° C. or higher for good crystallization. 13. A clean surface of a Si (001) substrate is coated with 3C-SiC (001).
And a step of epitaxially growing Si on the 3C-SiC (001), and a step of epitaxially growing 3C-SiC (111) SiC on the Si surface.