JPH09175856A - Dielectric porcelain composition for high frequency and dielectric resonator - Google Patents

Dielectric porcelain composition for high frequency and dielectric resonator

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Publication number
JPH09175856A
JPH09175856A JP7339779A JP33977995A JPH09175856A JP H09175856 A JPH09175856 A JP H09175856A JP 7339779 A JP7339779 A JP 7339779A JP 33977995 A JP33977995 A JP 33977995A JP H09175856 A JPH09175856 A JP H09175856A
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JP
Japan
Prior art keywords
dielectric
value
high frequency
composition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7339779A
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Japanese (ja)
Other versions
JP3336179B2 (en
Inventor
Tetsuya Kishino
哲也 岸野
Takeshi Okamura
健 岡村
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Kyocera Corp
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Kyocera Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a dielectric porcelain composition for high frequency having relative permittivity lower than alumina and forsterite, and Q-value higher than glass ceramic. SOLUTION: This dielectric porcelain 1 composition for high frequency is a compound oxide comprising Mg, Al and Si as metal elements in which when a molar ratio compositional formula by the oxide of each metal element is expressed by xMgO-yAl2 O3 -zSiO2 , (x, y, z) satisfy 11<=(x)<=50, 0<(y)<=9, 41<=(z)<=80 and (x+y+z)=100, and has <=7 relative permittivity and Q-value >=2,000 at 10GHz. The composition is used as a porcelain substrate 3 or a supporting member 2 of a dielectric resonator.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、例えば、マイクロ
波,ミリ波等の高周波で用いられる高周波用誘電体磁器
組成物に係わり、例えば、マイクロ波,ミリ波集積回路
等のマイクロ波,ミリ波帯域で用いられる回路素子用基
板,誘電体共振器用支持台,誘電体共振器,誘電体導波
路,誘電体アンテナ等の材料として有用な高周波用誘電
体磁器組成物、並びに誘電体磁器を支持台を介して基板
に固定した誘電体共振器に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency dielectric porcelain composition used in high frequencies such as microwaves and millimeter waves. High frequency dielectric porcelain composition useful as a material for circuit element substrates, dielectric resonator supports, dielectric resonators, dielectric waveguides, dielectric antennas, etc. used in the band, and a support for dielectric porcelain The present invention relates to a dielectric resonator fixed to a substrate via.

【0002】[0002]

【従来技術】マイクロ波,ミリ波集積回路をはじめとす
る高周波回路素子では、誘電体磁器を支持部材を介して
基板に固定する構造が採用される場合がある。例えば、
誘電体共振器制御型マイクロ波発信器は、図1に示すよ
うに、誘電体磁器1を支持部材2を介して磁器基板3に
取り付け、誘電体磁器1の外部に漏れ出る電磁界Hを利
用して磁器基板3に設けたストリップライン4に結合さ
せ、これらを金属ケ−ス5に収容させた構造を有してい
る。
2. Description of the Related Art A high frequency circuit element such as a microwave or millimeter wave integrated circuit may employ a structure in which a dielectric ceramic is fixed to a substrate via a supporting member. For example,
As shown in FIG. 1, the dielectric resonator control type microwave oscillator mounts the dielectric ceramic 1 on the ceramic substrate 3 via the supporting member 2 and utilizes the electromagnetic field H leaking to the outside of the dielectric ceramic 1. Then, it is connected to the strip line 4 provided on the porcelain substrate 3, and these are housed in the metal case 5.

【0003】この種の高周波回路においては、誘電体磁
器1の電界が支持部材2を介して漏れるのを制御するこ
とによって、無負荷Qの高い共振系が構成されることに
なるため、支持部材2には比誘電率が低く誘電損失(t
anδ)が小さい(Q値が大きい)材料を使用する必要
がある。このため、従来、支持部材材料としては比誘電
率が約7、測定周波数10GHzでのQ値が約1500
0のフォルステライトが採用され、また、磁器基板の材
料としては主として比誘電率が約10、測定周波数10
GHzでのQ値が20000以上のアルミナ磁器が採用
されていた(例えば、特開昭62−103904号公報
等参照)。
In this type of high-frequency circuit, a resonance system with a high no-load Q is formed by controlling the electric field of the dielectric ceramic 1 from leaking through the support member 2. No. 2 has a low relative dielectric constant and a low dielectric loss (t
an δ) must be used (a Q value is large). Therefore, conventionally, a supporting member material has a relative dielectric constant of about 7, and a Q value of about 1500 at a measurement frequency of 10 GHz.
Forsterite of 0 is used, and the relative permittivity is about 10 and the measurement frequency is 10
Alumina porcelain having a Q value of 20,000 or more at GHz has been employed (for example, see Japanese Patent Application Laid-Open No. 62-103904).

【0004】一方、比誘電率が低い材料としては、従
来、比誘電率が4〜6、測定周波数10GHzでのQ値
が1000程度のガラスセラミックが知られている(例
えば、特開昭61−234128号公報等参照)。
On the other hand, as a material having a low relative permittivity, a glass ceramic having a relative permittivity of 4 to 6 and a Q value of about 1000 at a measurement frequency of 10 GHz has been conventionally known (for example, Japanese Patent Laid-Open No. 61- 234128, etc.).

【0005】[0005]

【発明が解決しようとする課題】しかしながら、従来用
いられていたアルミナ、及びフォルステライトの比誘電
率はそれぞれ約10及び約7程度であり、近年における
高周波数帯の誘電体共振器の普及に伴い、より低い比誘
電率の材料が求められていた。
However, the relative permittivities of conventionally used alumina and forsterite are about 10 and about 7, respectively, and with the spread of high frequency dielectric resonators in recent years. , Lower dielectric constant materials have been sought.

【0006】一方、低誘電率材料として用いられている
ガラスセラミック、ステアタイト等の磁器は比誘電率が
約4〜6と小さいが、Q値が10GHzで1000程度
であり、近年における高周波数帯の誘電体共振器の普及
に伴い、より高いQ値の低誘電率材料が求められてい
た。
On the other hand, porcelains such as glass ceramics and steatite which are used as low dielectric constant materials have a small relative dielectric constant of about 4 to 6, but have a Q value of about 1000 at 10 GHz, which is a high frequency band in recent years. With the widespread use of the above dielectric resonator, a low dielectric constant material having a higher Q value has been required.

【0007】また、共振器の磁器基板に主として使用さ
れているアルミナ磁器は比誘電率が約10と比較的高
く、高インピ−ダンスのストリップラインを形成しよう
とすると、ライン幅が小さくなりすぎて(通常1μm以
下)、断線が生じたり、相対的なライン幅のばらつきが
大きくなり、マイクロ波集積回路の不良率が増大すると
いう問題があった。他方、この種の磁器基板におけるス
トリップラインのインピ−ダンスは、基板の厚さが一定
であれば、その比誘電率及びストリップラインの幅にそ
れぞれ反比例するため、ライン幅を小さくする代わり
に、比誘電率の低い基板材料を使用することによっても
インピ−ダンスを高めることができ、このため,より低
誘電率材料が求められていた。
Alumina porcelain, which is mainly used for the porcelain substrate of the resonator, has a relatively high relative dielectric constant of about 10, and the line width becomes too small when forming a high impedance stripline. (Normally 1 μm or less) There has been a problem that disconnection occurs or relative line width variation becomes large, and the defective rate of the microwave integrated circuit increases. On the other hand, the impedance of the stripline in this type of porcelain substrate is inversely proportional to the relative permittivity and the width of the stripline, respectively, if the thickness of the substrate is constant. The impedance can also be increased by using a substrate material having a low dielectric constant, and therefore, a material having a lower dielectric constant has been required.

【0008】本発明は、アルミナ,フォルステライトよ
りも低い比誘電率を有し、かつ、ガラスセラミックより
も高いQ値を有する高周波用誘電体磁器組成物を提供す
ることをことを目的とする。
It is an object of the present invention to provide a high frequency dielectric ceramic composition having a relative dielectric constant lower than those of alumina and forsterite and having a Q value higher than that of glass ceramics.

【0009】[0009]

【課題を解決するための手段】本発明者等は、前記課題
を解決すべく鋭意検討した結果、金属元素として、M
g,Al,Siのみからなり、これらの元素の酸化物に
よるモル比組成式をxMgO−yAl2 3 −zSiO
2 と表した時にx,y,zが一定の範囲である場合に
は、アルミナ、フォルステライトよりも低い比誘電率を
有し、かつ、ガラスセラミックよりも高いQ値を有する
高周波用誘電体磁器組成物を得ることができることを見
い出し、本発明に至った。
Means for Solving the Problems As a result of intensive studies to solve the above problems, the present inventors have found that M is M
g, Al, made of Si only, xMgO-yAl 2 O 3 -zSiO the molar ratio composition formula of an oxide of these elements
When x, y, and z are in a certain range when expressed as 2 , a high frequency dielectric porcelain having a relative dielectric constant lower than that of alumina and forsterite and a Q value higher than that of glass ceramics. The inventors have found that a composition can be obtained and have reached the present invention.

【0010】即ち、本発明の高周波用誘電体磁器組成物
は、金属元素としてMg,Al,Siからなる複合酸化
物であって、各金属元素の酸化物によるモル比組成式を
xMgO−yAl2 3 −zSiO2 と表した時、前記
x,y,zが11≦x≦50、0<y≦9、41≦z≦
80、x+y+z=100を満足するとともに、比誘電
率が7以下で、かつ10GHzにおけるQ値が2000
以上のものである。
That is, the high frequency dielectric ceramic composition of the present invention is a complex oxide composed of Mg, Al, and Si as metal elements, and the molar ratio composition formula of the oxide of each metal element is xMgO-yAl 2. When expressed as O 3 -zSiO 2 , the above x, y, z are 11 ≦ x ≦ 50, 0 <y ≦ 9, 41 ≦ z ≦.
80, x + y + z = 100, a dielectric constant of 7 or less, and a Q value of 2000 at 10 GHz.
That's all.

【0011】また、本発明の誘電体共振器は、基板上に
支持部材を介して誘電体磁器を固定してなる誘電体共振
器において、支持部材および/または基板が、金属元素
としてMg,Al,Siからなる複合酸化物であって、
各金属元素の酸化物によるモル比組成式をxMgO−y
Al2 3 −zSiO2 と表した時、前記x,y,zが
11≦x≦50、0<y≦9、41≦z≦80、x+y
+z=100を満足するとともに、比誘電率が7以下
で、かつ、10GHzにおけるQ値が2000以上のも
のである。
Further, the dielectric resonator of the present invention is a dielectric resonator in which a dielectric ceramic is fixed on a substrate through a supporting member, and the supporting member and / or the substrate is made of Mg, Al as a metal element. , A complex oxide of Si,
The molar ratio compositional formula of the oxide of each metal element is xMgO-y
When expressed as Al 2 O 3 -zSiO 2 , the above x, y, z are 11 ≦ x ≦ 50, 0 <y ≦ 9, 41 ≦ z ≦ 80, x + y.
In addition to satisfying + z = 100, the relative permittivity is 7 or less and the Q value at 10 GHz is 2000 or more.

【0012】[0012]

【作用】本発明の誘電体磁器組成物では、比誘電率が6
程度、10GHzにおけるQ値が2000以上を有する
ことができ、このような低誘電率および高Q値の誘電体
磁器を、例えば、誘電体共振器の支持部材または基板に
用いることにより、高インピーダンスのマイクロ波用集
積回路などの高周波用回路素子を信頼性を損なうことな
く製造することができる。
The dielectric ceramic composition of the present invention has a relative dielectric constant of 6
The Q value at a level of 10 GHz can be 2000 or more. By using such a dielectric ceramic having a low dielectric constant and a high Q value for a supporting member or a substrate of a dielectric resonator, a high impedance can be obtained. A high frequency circuit element such as a microwave integrated circuit can be manufactured without impairing reliability.

【0013】[0013]

【発明の実施の形態】本発明の誘電体磁器組成物は、金
属元素の酸化物によるモル比組成式をxMgO−yAl
2 3 −zSiO2 と表した時、前記x,y,zが11
≦x≦50、0<y≦9、41≦z≦80、x+y+z
=100を満足するものである。
BEST MODE FOR CARRYING OUT THE INVENTION The dielectric ceramic composition of the present invention has a molar ratio composition formula of an oxide of a metal element as xMgO-yAl.
When expressed as 2 O 3 -zSiO 2 , x, y and z are 11
≦ x ≦ 50, 0 <y ≦ 9, 41 ≦ z ≦ 80, x + y + z
= 100 is satisfied.

【0014】本発明の高周波用誘電体磁器組成物の成分
組成を前記範囲に限定したのは、次の理由による。即
ち、MgOのモル百分率xを11≦x≦50としたの
は、xが11よりも小さい場合は焼結体が緻密化せず、
50を越えると良好な焼結体が得られずQ値が低くな
る。MgOのモル百分率xはQ値を3000以上とする
ためには30≦x≦50であることが望ましい。
The reason why the component composition of the high frequency dielectric ceramic composition of the present invention is limited to the above range is as follows. That is, the molar percentage x of MgO is set to 11 ≦ x ≦ 50, because the sintered body is not densified when x is smaller than 11,
If it exceeds 50, a good sintered body cannot be obtained and the Q value becomes low. The molar percentage x of MgO is preferably 30 ≦ x ≦ 50 in order to set the Q value to 3000 or more.

【0015】また、Al2 3 のモル百分率を示すyを
0<y≦9としたのは、Al2 3量yが9を越えると
焼成温度範囲が狭くなり、良好な焼結体を得ることが困
難になるからである。Al2 3 のモル百分率を示すy
はQ値を3000以上とするためには、0<y≦5であ
ることが望ましい。
Further, y which indicates the molar percentage of Al 2 O 3 is set to 0 <y ≦ 9, because the firing temperature range becomes narrow when the amount of Al 2 O 3 exceeds 9 and a good sintered body is obtained. Because it will be difficult to obtain. Y showing the molar percentage of Al 2 O 3
Is preferably 0 <y ≦ 5 in order to set the Q value to 3000 or more.

【0016】SiO2 のモル百分率を示すzを41≦z
≦80としたのは、41未満では良好な焼結体が得られ
ずQ値が低く、また80を越えると焼結体を緻密化でき
なくなるからである。SiO2 のモル百分率を示すz
は、Q値を3000以上とするためには、45≦z≦7
0であることが望ましい。
Z representing the mole percentage of SiO 2 is 41 ≦ z
≦ 80 is because when it is less than 41, a good sintered body cannot be obtained and the Q value is low, and when it exceeds 80, the sintered body cannot be densified. Z showing the mole percentage of SiO 2.
Is 45 ≦ z ≦ 7 in order to set the Q value to 3000 or more.
It is preferably 0.

【0017】本発明の誘電体磁器組成物は、金属元素の
酸化物によるモル比組成式をxMgO−yAl2 3
zSiO2 と表した時、x,y,zが30≦x≦50、
0<y≦5、45≦z≦70、x+y+z=100を満
足することが望ましい。
The dielectric porcelain composition of the present invention has a molar ratio compositional formula of an oxide of a metal element as xMgO-yAl 2 O 3-.
When expressed as zSiO 2 , x, y, z are 30 ≦ x ≦ 50,
It is desirable to satisfy 0 <y ≦ 5, 45 ≦ z ≦ 70, and x + y + z = 100.

【0018】さらに、本発明において、測定周波数10
GHzでのQ値が2000以上を満足するようにしたの
は、Q値が2000以上ある場合には、近年における高
周波数帯の誘電体共振器にも十分対応することができる
からである。
Further, in the present invention, the measurement frequency 10
The reason why the Q value at GHz is set to be 2000 or more is that the Q value of 2000 or more can be sufficiently applied to the recent high frequency dielectric resonators.

【0019】また、本発明の誘電体磁器組成物では、表
1、図2〜4に示すように、主結晶相がプロトエンスタ
タイト、コーディライト、クリストバライトのいずれか
であり、他に結晶相として、フォルステライト,トリジ
マイト等が析出する場合がある。主結晶相としてはプロ
トエンスタタイトが析出することが高いQ値を有すると
いう点で望ましい。また、組成によってその析出相が異
なるが、上記組成範囲を満足する限り、比誘電率7以
下、10GHzでのQ値2000以上となる。
Further, in the dielectric ceramic composition of the present invention, as shown in Table 1 and FIGS. 2 to 4, the main crystal phase is protoenstatite, cordierite or cristobalite, and the other crystal phases are , Forsterite, tridymite, etc. may precipitate. The precipitation of protoenstatite as the main crystal phase is desirable in that it has a high Q value. Although the precipitation phase varies depending on the composition, the dielectric constant is 7 or less and the Q value is 2000 or more at 10 GHz as long as the above composition range is satisfied.

【0020】また、本発明の誘電体共振器は、図1に示
すように、基板3上に支持部材2を介して誘電体磁器1
を固定してなり、支持部材2または基板3、或いは支持
部材2及び基板3が、上記誘電体磁器組成物からなるも
のである。
Further, the dielectric resonator of the present invention, as shown in FIG. 1, has a dielectric ceramic 1 on a substrate 3 with a supporting member 2 interposed therebetween.
Is fixed, and the support member 2 or the substrate 3 or the support member 2 and the substrate 3 are made of the above-described dielectric ceramic composition.

【0021】本発明の誘電体磁器は、原料粉末として、
例えば、MgCO3 粉末,Al2 3 粉末,SiO2
末を用い、所定の割合で秤量し、湿式混合した後乾燥
し、この混合物を大気中において1100〜1300℃
で仮焼した後、粉砕した。得られた粉末に適量のバイン
ダを加えて成形し、この成形体を大気中1200〜17
00℃で焼成することにより得られる。焼成温度につい
ては、緻密な焼結体を得るために、最適温度において厳
密に制御する必要がある。
The dielectric porcelain of the present invention comprises, as raw material powder,
For example, MgCO 3 powder, Al 2 O 3 powder, and SiO 2 powder are weighed at a predetermined ratio, wet-mixed and then dried, and the mixture is heated to 1100 to 1300 ° C. in the atmosphere.
After calcination in, it was crushed. An appropriate amount of binder is added to the obtained powder to form a compact, and this compact is placed in the atmosphere at 1200-17.
It is obtained by firing at 00 ° C. The firing temperature must be strictly controlled at the optimum temperature in order to obtain a dense sintered body.

【0022】尚、本発明においては、Mg,Al,Si
を含む原料粉末は、それぞれの金属元素を含有する酸化
物,炭酸塩,酢酸塩等の無機化合物、もしくは有機金属
等の有機化合物のいずれであっても、焼成により酸化物
となるものであれば良い。
In the present invention, Mg, Al, Si
The raw material powder containing any of oxides, carbonates, acetates and other inorganic compounds containing each metal element, or organic compounds such as organic metals, as long as they become oxides by firing. good.

【0023】また、本発明の誘電体磁器組成物は、金属
元素として、Mg,Al,Siのみからなるものである
が、例えば、粉砕ボールや原料粉末の不純物として、Z
r,Ni,Fe,Cr,Ca,P,Na,Ti等が混入
する場合があるが、この場合も、上記組成を満足する限
り低誘電率で、高Q値の磁器を得ることができる。
The dielectric porcelain composition of the present invention is composed only of Mg, Al and Si as metal elements.
In some cases, r, Ni, Fe, Cr, Ca, P, Na, Ti, etc. may be mixed, but in this case as well, a porcelain having a low dielectric constant and a high Q value can be obtained as long as the above composition is satisfied.

【0024】また、本発明の誘電体磁器組成物では、低
誘電率および高Q値が求められるものであれば、例え
ば、回路素子用基板,誘電体共振器の誘電体磁器,誘電
体導波路,誘電体アンテナ等、どのようなものでも適用
できるが、上記したように、誘電体共振器の支持部材ま
たは基板に最適である。
In the dielectric ceramic composition of the present invention, if a low dielectric constant and a high Q value are required, for example, a circuit element substrate, a dielectric resonator dielectric ceramic, a dielectric waveguide. , A dielectric antenna, etc. can be applied, but as described above, it is most suitable for a supporting member or a substrate of a dielectric resonator.

【0025】さらに、本発明においては析出するプロト
エンスタタイト、コーディエライト、クリストバライト
等の主結晶粒子の平均結晶粒径は、0.5〜 5μmで
あることが高いQ値を有するという点で望ましい。
Further, in the present invention, it is desirable that the average crystal grain size of the main crystal grains of protoenstatite, cordierite, cristobalite or the like to be precipitated is 0.5 to 5 μm because it has a high Q value. .

【0026】[0026]

【実施例】原料粉末として純度99%のMgCO3 、純
度99.7%のAl2 3 、純度99.4%のSiO2
粉末を用い、これらを焼結体が表1に示す組成となるよ
うに秤量し、15時間湿式混合した後、乾燥し、この混
合物を1200℃2時間仮焼した後、粉砕した。得られ
た粉末に適量のバインダを加えて造粒し、これを100
0kg/cm2 の圧力の下で成形して直径12mm厚さ
8mmの成形体を得た。この成形体を大気中1275〜
1700℃で2時間焼成し、直径10mm厚さ5mmに
研摩して誘電体磁器試料を得た。
Example As a raw material powder, MgCO 3 having a purity of 99%, Al 2 O 3 having a purity of 99.7%, and SiO 2 having a purity of 99.4%
Using powder, these were weighed so that the sintered body had the composition shown in Table 1, wet-mixed for 15 hours, dried, and calcined at 1200 ° C. for 2 hours, and then pulverized. Add an appropriate amount of binder to the obtained powder and granulate.
Molding was performed under a pressure of 0 kg / cm 2 to obtain a molded body having a diameter of 12 mm and a thickness of 8 mm. This molded body is placed in the atmosphere at 1275
It was fired at 1700 ° C. for 2 hours and polished to a diameter of 10 mm and a thickness of 5 mm to obtain a dielectric ceramic sample.

【0027】この試料を用いて誘電体円柱共振器法にて
測定周波数15〜17GHzにおいて比誘電率およびQ
値を測定した。Q値に関してはQf=一定とみなして1
0GHzにおけるQ値を求めた。その結果を表1に示
す。
Using this sample, the dielectric constant and Q at a measurement frequency of 15 to 17 GHz by the dielectric cylinder resonator method.
The value was measured. Regarding Q value, assuming that Qf = constant, 1
The Q value at 0 GHz was obtained. Table 1 shows the results.

【0028】[0028]

【表1】 [Table 1]

【0029】表1によれば、本発明に係る高周波用誘電
体磁器組成物は、比誘電率が7以下と低く、しかも10
GHzにおけるQ値が2000以上と高い値を示すこと
がわかる。
According to Table 1, the high frequency dielectric ceramic composition according to the present invention has a low relative dielectric constant of 7 or less, and 10
It can be seen that the Q value at GHz is as high as 2000 or more.

【0030】尚、表1には、X線回折によって決定し
た、各焼結体の主結晶相も示した。図2、図3、図4に
試料No.5、No.8、No.13のX線回折チャート図を
示す。
Table 1 also shows the main crystal phase of each sintered body, which was determined by X-ray diffraction. 2, 3, and 4 show X-ray diffraction charts of samples No. 5, No. 8, and No. 13.

【0031】これらの図から、主たる結晶相としてクリ
ストバライト、プロトエンスタタイト、コーディエライ
トが、また、その他の結晶相として、クリノエンスタタ
イト、フォルステライト等が析出していることが判る。
From these figures, it can be seen that cristobalite, protoenstatite and cordierite are precipitated as the main crystal phases, and clinoenstatite and forsterite are precipitated as the other crystal phases.

【0032】[0032]

【発明の効果】本発明の高周波用誘電体磁器組成物で
は、7以下の低い比誘電率を有し、10GHzにおける
Q値が2000以上の高いQ値を示す磁器が得られ、例
えば、誘電体共振器の支持部材または基板に用いること
により、高インピーダンスのマイクロ波用集積回路など
の高周波用回路素子を信頼性を損なうことなく製造する
ことができる。また、低誘電率および高Q値であるた
め、例えば、マイクロ波,ミリ波集積回路等のマイクロ
波,ミリ波帯域で用いられる回路素子用基板,誘電体共
振器用支持台,誘電体共振器,誘電体導波路,誘電体ア
ンテナ等の材料として最適である。
INDUSTRIAL APPLICABILITY With the high frequency dielectric ceramic composition of the present invention, a ceramic having a low relative permittivity of 7 or less and a high Q value of 2000 or more at 10 GHz can be obtained. By using it as a supporting member or substrate of a resonator, a high-frequency circuit element such as a high-impedance microwave integrated circuit can be manufactured without impairing reliability. In addition, since it has a low dielectric constant and a high Q value, for example, a substrate for a circuit element, a support for a dielectric resonator, a dielectric resonator, It is optimal as a material for dielectric waveguides, dielectric antennas and the like.

【図面の簡単な説明】[Brief description of the drawings]

【図1】高周波用回路素子の一例を示す誘電体共振器制
御型マイクロ波発信器の概略断面図である。
FIG. 1 is a schematic cross-sectional view of a dielectric resonator control type microwave transmitter showing an example of a high-frequency circuit element.

【図2】試料No.5の結晶構造を示すX線回折図であ
る。
FIG. 5 is an X-ray diffraction diagram showing a crystal structure of Sample No. 5.

【図3】試料No.8の結晶構造を示すX線回折図であ
る。
FIG. 8 is an X-ray diffraction diagram showing a crystal structure of Sample No. 8.

【図4】試料No.13の結晶構造を示すX線回折図で
ある。
FIG. 13 is an X-ray diffraction diagram showing a crystal structure of 13.

【符号の説明】[Explanation of symbols]

1・・・誘電体磁器 2・・・支持部材 3・・・磁器基板 DESCRIPTION OF SYMBOLS 1 ... Dielectric porcelain 2 ... Support member 3 ... Porcelain board

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】金属元素としてMg,Al,Siからなる
複合酸化物であって、各金属元素の酸化物によるモル比
組成式を xMgO−yAl2 3 −zSiO2 と表した時、前記x,y,zが 11≦x≦50 0 <y≦9 41≦z≦80 x+y+z=100 を満足するとともに、比誘電率が7以下、かつ、10G
HzにおけるQ値が2000以上であることを特徴とす
る高周波用誘電体磁器組成物。
1. A composite oxide composed of Mg, Al and Si as metal elements, wherein when the molar ratio compositional formula of the oxide of each metal element is expressed as xMgO-yAl 2 O 3 -zSiO 2 , , Y, z satisfy 11 ≦ x ≦ 50 0 <y ≦ 94 1 ≦ z ≦ 80 x + y + z = 100, and have a relative dielectric constant of 7 or less and 10 G
A high frequency dielectric porcelain composition having a Q value of 2000 or more at Hz.
【請求項2】基板上に支持部材を介して誘電体磁器を固
定してなる誘電体共振器において、前記基板および/ま
たは前記支持部材が、金属元素としてMg,Al,Si
からなる複合酸化物であって、各金属元素の酸化物によ
るモル比組成式を xMgO−yAl2 3 −zSiO2 と表した時、前記x,y,zが 11≦x≦50 0 <y≦9 41≦z≦80 x+y+z=100 を満足するとともに、比誘電率が7以下、かつ、10G
HzにおけるQ値が2000以上であることを特徴とす
る誘電体共振器。
2. A dielectric resonator in which a dielectric ceramic is fixed on a substrate via a supporting member, wherein the substrate and / or the supporting member are Mg, Al, Si as a metal element.
When the molar ratio composition formula of the oxide of each metal element is represented by xMgO-yAl 2 O 3 -zSiO 2 , the above x, y, z are 11 ≦ x ≦ 500 <y ≦ 94 1 ≦ z ≦ 80 x + y + z = 100 is satisfied, the relative dielectric constant is 7 or less, and 10G
A dielectric resonator having a Q value of 2000 or more at Hz.
JP33977995A 1995-12-26 1995-12-26 High frequency dielectric ceramic composition and dielectric resonator Expired - Fee Related JP3336179B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33977995A JP3336179B2 (en) 1995-12-26 1995-12-26 High frequency dielectric ceramic composition and dielectric resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33977995A JP3336179B2 (en) 1995-12-26 1995-12-26 High frequency dielectric ceramic composition and dielectric resonator

Publications (2)

Publication Number Publication Date
JPH09175856A true JPH09175856A (en) 1997-07-08
JP3336179B2 JP3336179B2 (en) 2002-10-21

Family

ID=18330736

Family Applications (1)

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Country Status (1)

Country Link
JP (1) JP3336179B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10892097B2 (en) 2016-03-04 2021-01-12 Tdk Electronics Ag Dielectric ceramic composition, method for the production and use thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10892097B2 (en) 2016-03-04 2021-01-12 Tdk Electronics Ag Dielectric ceramic composition, method for the production and use thereof

Also Published As

Publication number Publication date
JP3336179B2 (en) 2002-10-21

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