JPH0952762A - Aluminous ceramic composition - Google Patents
Aluminous ceramic compositionInfo
- Publication number
- JPH0952762A JPH0952762A JP7205751A JP20575195A JPH0952762A JP H0952762 A JPH0952762 A JP H0952762A JP 7205751 A JP7205751 A JP 7205751A JP 20575195 A JP20575195 A JP 20575195A JP H0952762 A JPH0952762 A JP H0952762A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- dielectric loss
- alumina
- tio
- absolute value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、誘電体共振器、マ
イクロ波導波路、マイクロ波コンデンサ、マイクロ波I
C基板、ICパッケージ、誘電体アンテナ等の電気通信
分野またはマイクロ波透過窓等の核融合関係設備分野な
どの高周波用として好適に利用されるアルミナ質磁器組
成物に関する。TECHNICAL FIELD The present invention relates to a dielectric resonator, a microwave waveguide, a microwave capacitor, and a microwave I.
The present invention relates to an alumina-based porcelain composition which is suitably used for high frequencies in the field of telecommunications such as C substrates, IC packages, dielectric antennas and the field of nuclear fusion related facilities such as microwave transmission windows.
【0002】[0002]
【従来技術】近年、通信網の急激な発展に伴って、通信
に使用する周波数が拡大すると同時に、マイクロ波領域
やミリ波領域などの高周波領域にまで及びつつある。一
方、誘電体磁器は、コンデンサなどの他に、誘電体共振
器や集積回路基板、誘電体アンテナ、各種高周波回路の
インピーダンス整合等に応用されており、これらについ
てもマイクロ波やミリ波に対しても適応可能なものが望
まれている。例えば、フィルタやガンまたはFETマイ
クロ波発振器の周波数安定化のために必要となり、その
需要が増大している。2. Description of the Related Art In recent years, with the rapid development of communication networks, frequencies used for communication have expanded, and at the same time, have reached high frequencies such as microwaves and millimeter waves. On the other hand, dielectric porcelain has been applied to dielectric resonators, integrated circuit boards, dielectric antennas, impedance matching of various high-frequency circuits, etc. in addition to capacitors, etc. What is adaptable is desired. For example, it is necessary for frequency stabilization of filters, guns, or FET microwave oscillators, and its demand is increasing.
【0003】マイクロ波回路素子の大きさは、電磁波の
波長が基準となっており、誘電体を用いたマイクロ波立
体回路内を電磁波が伝搬するときのその波長は、真空中
の波長をλ0 、比誘電率をεとするとλ0 /ε1/2 とな
る。The size of the microwave circuit element is based on the wavelength of the electromagnetic wave, and when the electromagnetic wave propagates in the microwave three-dimensional circuit using the dielectric, the wavelength is λ 0 in vacuum. , Let ε be the relative permittivity, then λ 0 / ε 1/2 .
【0004】一方、セラミックスとして最も一般に使用
されているアルミナは、サファイア単結晶の場合、誘電
率が10前後、誘電損失は10-6(8GHz)と低損失
であるが、非常に高価である。これに対して、アルミナ
粉末に各種の焼結助剤を添加し焼結したアルミナ質焼結
体は、機械的強度が高く、低コストであるため上述した
ような電気通信分野での利用が大いに期待されている。On the other hand, alumina, which is most commonly used as ceramics, has a low dielectric loss of about 10 and a dielectric loss of 10 −6 (8 GHz) in the case of sapphire single crystal, but it is very expensive. On the other hand, an alumina-based sintered body obtained by adding various sintering aids to alumina powder has high mechanical strength and is low in cost, so that it can be greatly used in the telecommunications field as described above. Is expected.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、アルミ
ナを主成分とする磁器は、そもそも共振周波数の温度係
数(以下、τfと記す)が約−55ppm/℃と大きい
ため使用用途が極めて制限されるという問題があった。
このτfを制御する方法としては、τfが正の成分と負
の成分を適宜組み合わせることにより調整することが可
能であるが、誘電損失が大きくなるなど、高周波におけ
る低損失を維持しつつ、τfを小さくすることは困難で
あった。また、サファイア(Al2 O3 )などの単結晶
の誘電損失が非常に低いが、アルミナ質焼結体に比較し
て非常に高いという問題がある。However, since the temperature coefficient of resonance frequency (hereinafter referred to as τf) is large at about −55 ppm / ° C., the porcelain mainly containing alumina is extremely limited in its intended use. There was a problem.
As a method of controlling τf, it is possible to adjust by appropriately combining τf with a positive component and a negative component, but τf can be controlled while maintaining low loss at high frequencies such as increased dielectric loss. It was difficult to make it smaller. Further, although the single crystal such as sapphire (Al 2 O 3 ) has a very low dielectric loss, it has a problem that it is very high as compared with the alumina sintered body.
【0006】そのため、サファイアと同程度の低誘電損
失を有しつつ、しかもτfの小さい安価な磁器が要求さ
れていた。Therefore, there has been a demand for an inexpensive porcelain having a low dielectric loss comparable to that of sapphire and having a small τf.
【0007】[0007]
【課題を解決するための手段】本発明者らは、まず、ア
ルミナのτfの絶対値を低下させるためには、アルミナ
と逆の符号の温度係数を持つ化合物を添加する必要があ
ることを前提に種々検討した結果、アルミナへの添加物
として、TiO2 とNb2 O5 とを特定の範囲で組み合
わせて添加した結果、低誘電損失と、τfの絶対値を低
減できることを見いだし、本発明に至った。DISCLOSURE OF THE INVENTION The inventors of the present invention firstly assume that in order to reduce the absolute value of τf of alumina, it is necessary to add a compound having a temperature coefficient having an opposite sign to that of alumina. As a result of various investigations into the present invention, as a result of adding TiO 2 and Nb 2 O 5 in combination within a specific range as an additive to alumina, it was found that low dielectric loss and the absolute value of τf can be reduced, and the present invention I arrived.
【0008】即ち、本発明のアルミナ質磁器組成物は、
Al2 O3 、TiO2 およびNb2O5 を主成分とし、
各成分のモル比による組成比が、図1のAl2 O3 −T
iO2 −Nb2 O5 3成分組成図における の点による線分A−B−C−D−Aで囲まれた範囲内に
あることを特徴とするものであり、さらには、結晶相と
して、少なくともα−Al2 O3 とTiO2 を含み、測
定周波数8GHzにおける誘電損失が1×10-3以下、
共振周波数の25〜85℃における温度係数の絶対値|
τf|が30ppm以下の優れた誘電特性を有するもの
である。That is, the alumina-based ceramic composition of the present invention is
Al 2 O 3 , TiO 2 and Nb 2 O 5 as main components,
The composition ratio according to the molar ratio of each component is Al 2 O 3 -T in FIG.
iO 2 —Nb 2 O 5 3 composition diagram Is within the range surrounded by the line segment A-B-C-D-A, and further contains at least α-Al 2 O 3 and TiO 2 as a crystal phase. , The dielectric loss at a measurement frequency of 8 GHz is 1 × 10 −3 or less,
Absolute value of temperature coefficient at resonance frequency of 25 to 85 ° C |
τf | has an excellent dielectric property of 30 ppm or less.
【0009】[0009]
【作用】本発明によれば、Al2 O3 に対して、TiO
2 とNb2 O5 の複合添加により生成されるTiO2 に
より温度係数τfを正側に移行させることができる。そ
の結果、測定周波数8GHzにおいて誘電損失が1×1
0-3以下を維持しつつ、τfの絶対値を30ppm/℃
以下に制御することが可能となり、これにより高周波領
域の電気通信分野での広範囲の利用ができるようになっ
た。According to the present invention, TiO 2 is added to Al 2 O 3 .
The temperature coefficient τf can be shifted to the positive side by TiO 2 produced by the combined addition of 2 and Nb 2 O 5 . As a result, the dielectric loss is 1 × 1 at the measurement frequency of 8 GHz.
The absolute value of τf is 30 ppm / ° C while maintaining 0 -3 or less.
It becomes possible to control as follows, and thus it has become possible to use it in a wide range in the telecommunication field in the high frequency region.
【0010】なお、Al2 O3 量が、上記の組成範囲よ
りも過剰となるとτfが負に大きくなり、逆に上記の組
成範囲よりも少ないとτfは正に大きくなるか、あるい
は誘電損失が1×10-3を越えてしまう。また、アルミ
ナ含有量が範囲内であっても、Nb2 O5 とTiO2 と
の比率が上記組成範囲を逸脱すると、Al2 TiO5ま
たはAlNbO4 が過剰に析出し、誘電損失が1×1
0-3を越えてしまうか、共振周波数の温度係数の絶対値
が30ppm/℃を越えてしまう。When the amount of Al 2 O 3 exceeds the above composition range, τf becomes negatively large. On the contrary, when the Al 2 O 3 amount is less than the above composition range, τf becomes positively large or the dielectric loss increases. It exceeds 1 × 10 -3 . Further, even if the alumina content is within the range, if the ratio of Nb 2 O 5 and TiO 2 deviates from the above composition range, Al 2 TiO 5 or AlNbO 4 will be excessively precipitated and the dielectric loss will be 1 × 1.
Either it exceeds 0 -3 or the absolute value of the temperature coefficient of the resonance frequency exceeds 30 ppm / ° C.
【0011】[0011]
【発明の実施の形態】本発明のアルミナ質磁器組成物
は、Al2 O3 、TiO2 およびNb2 O5 、あるいは
焼成により前記酸化物を形成しえる炭酸塩、硝酸塩など
の塩を用いて、図1の組成範囲になるように秤量混合し
た後、これを所望の成形手段、例えば、ドクターブレー
ド法などのシート成形法、金型プレス法、冷間静水圧プ
レス法、押出し成形法、圧延法等により任意の形状に成
形する。その後、この成形体を、大気中などの酸化性雰
囲気中で1400〜1700℃の温度で焼成することに
より相対密度98%以上に緻密化することができる。BEST MODE FOR CARRYING OUT THE INVENTION The alumina-based porcelain composition of the present invention uses Al 2 O 3 , TiO 2 and Nb 2 O 5 , or a salt such as a carbonate or a nitrate capable of forming the oxide by firing. After being weighed and mixed so that the composition range shown in FIG. 1 is obtained, this is mixed with a desired molding means, for example, a sheet molding method such as a doctor blade method, a die pressing method, a cold isostatic pressing method, an extrusion molding method, a rolling method It is formed into an arbitrary shape by a method or the like. Then, the compact can be densified to a relative density of 98% or more by firing the compact at a temperature of 1400 to 1700 ° C. in an oxidizing atmosphere such as air.
【0012】なお、本発明の磁器組成物においては、上
記Al2 O3 、TiO2 、Nb2 O5 の成分以外に、例
えば、Mg、Si、Fe、Ca、Na、Gaなどの元素
が不可避不純物あるいは製造工程中において混入する場
合があるが、これらの成分は、酸化物換算で全量中0.
2重量%以下であれば、とりわけ本発明の効果に影響を
及ぼすことはない。In the porcelain composition of the present invention, in addition to the components of Al 2 O 3 , TiO 2 and Nb 2 O 5 , elements such as Mg, Si, Fe, Ca, Na and Ga are unavoidable. There are cases where impurities or impurities are mixed in during the manufacturing process, but these components are contained in an amount of 0.
If it is 2% by weight or less, the effect of the present invention is not particularly affected.
【0013】[0013]
【実施例】純度99.9%のAl2 O3 粉末、TiO2
粉末およびNb2 O5 粉末を表1、表2の組成となるよ
うに秤量し、この混合粉末を、純度99.9%のアルミ
ナボール、イソプロピルアルコール(IPA)と共に5
00mlポリポットに投入し、24時間回転ミルにて混
合した。混合後のスラリーを80℃大気中にて乾燥し8
0メッシュを通し評価粉末を得た。EXAMPLES Al 2 O 3 powder having a purity of 99.9%, TiO 2
The powder and the Nb 2 O 5 powder were weighed so as to have the compositions shown in Tables 1 and 2, and the mixed powder was mixed with alumina balls having a purity of 99.9% and isopropyl alcohol (IPA).
The mixture was put into a 00 ml polypot and mixed in a rotary mill for 24 hours. The mixed slurry is dried in the air at 80 ° C.
An evaluation powder was obtained through 0 mesh.
【0014】この粉末を金型プレスにて1000kg/
cm2 で直径20mm、厚み10mmに成形し、その後
3000kg/cm2 で冷間静水圧成形(CIP)を行
って成形した。そして、成形体は大気中、1550℃で
2時間保持して焼成した。This powder was pressed with a die press at 1000 kg /
It was molded into a diameter of 20 mm and a thickness of 10 mm at cm 2 , and then cold isostatic pressing (CIP) at 3000 kg / cm 2 . Then, the molded body was held in the atmosphere at 1550 ° C. for 2 hours and fired.
【0015】得られた焼結体を直径15mm、厚み7.
5mmに加工研磨した。そして、測定周波数8GHzで
の測定によって、誘電率(εr)、誘電損失(tan
δ)、および25〜85℃における共振周波数の温度係
数(τf)を測定した。また、波長λ=1.5418Å
のCuKα線によるX線回折により試料の結晶相を同定
した。これらの測定結果は、表1、表2に示した。The obtained sintered body had a diameter of 15 mm and a thickness of 7.
It was processed and polished to 5 mm. Then, the dielectric constant (εr) and the dielectric loss (tan) are measured by the measurement at the measurement frequency of 8 GHz.
δ) and the temperature coefficient (τf) of the resonance frequency at 25 to 85 ° C were measured. Also, the wavelength λ = 1.5418Å
The crystal phase of the sample was identified by X-ray diffraction using CuKα ray. The results of these measurements are shown in Tables 1 and 2.
【0016】[0016]
【表1】 [Table 1]
【0017】[0017]
【表2】 [Table 2]
【0018】表1、表2の結果によれば、Al2 O3 含
有量が過多の試料No.15、20では、τfの絶対値が
30ppm/℃を越え、Al2 O3 含有量が上記組成範
囲より少ない試料No.11〜13、21もτfの絶対値
が30ppm/℃を越えるものであった。また、TiO
2 とNb2 O5 の比率が本発明の範囲を逸脱する試料N
o.10、13、14、15では、τfの絶対値がいずれ
も30ppm/℃を越えるか、誘電損失が1×10-3を
越えるものであった。[0018] Table 1, according to the results of Table 2, the Al 2 O 3 content is too large sample Nanba15,20, the absolute value of τf exceed the 30ppm / ℃, Al 2 O 3 content of the Samples Nos. 11 to 13 and 21, which were smaller than the composition range, also had an absolute value of τf exceeding 30 ppm / ° C. Also, TiO
Sample N in which the ratio of 2 and Nb 2 O 5 is outside the scope of the present invention
In o.10, 13, 14, and 15, all of the absolute values of τf exceeded 30 ppm / ° C, or the dielectric loss exceeded 1 × 10 -3 .
【0019】これに対して、本発明における組成範囲の
試料は、いずれも結晶相としてα−Al2 O3 と、Ti
O2 が析出しており、誘電率9〜20、測定周波数8G
Hzにおける誘電損失が1×10-3以下、共振周波数の
25〜85℃における温度係数の絶対値|τf|が30
ppm/℃以下の優れた特性を示した。On the other hand, all the samples in the composition range of the present invention have α-Al 2 O 3 and Ti as crystal phases.
O 2 is deposited, dielectric constant 9 to 20, measurement frequency 8G
The dielectric loss at Hz is 1 × 10 −3 or less, and the absolute value of the temperature coefficient at resonant frequency 25 to 85 ° C. | τf | is 30.
It exhibited excellent characteristics of not more than ppm / ° C.
【0020】これらの中でも、図1中、線分E−F−G
−H−Eで囲まれた領域内では、誘電率9〜20、測定
周波数8GHzにおける誘電損失が1×10-3以下、共
振周波数の25〜85℃における温度係数の絶対値|τ
f|が10ppm/℃以下の優れた特性を示した。Among these, line segment EF-G in FIG.
In the area surrounded by −HE, the dielectric constant is 9 to 20, the dielectric loss at the measurement frequency of 8 GHz is 1 × 10 −3 or less, and the absolute value of the temperature coefficient at the resonance frequency of 25 to 85 ° C. | τ
The f | exhibited excellent characteristics of 10 ppm / ° C. or less.
【0021】[0021]
【発明の効果】以上詳述したように、本発明のアルミナ
質磁器組成物は、Al2 O3 に対して、TiO2 および
Nb2 O5 を所定の関係を満足するように配合すること
により、低い誘電損失を維持したまま、共振周波数の温
度係数の絶対値を低減することができ、これにより、マ
イクロ波やミリ波に適応した誘電体共振器、マイクロ波
導波路、マイクロ波コンデンサ、マイクロ波IC基板、
ICパッケージ、誘電体アンテナ等への応用が可能とな
った。As described in detail above, the alumina-based ceramic composition of the present invention is obtained by blending Al 2 O 3 with TiO 2 and Nb 2 O 5 so as to satisfy a predetermined relationship. It is possible to reduce the absolute value of the temperature coefficient of the resonance frequency while maintaining low dielectric loss, which allows dielectric resonators, microwave waveguides, microwave capacitors, microwaves that are suitable for microwaves and millimeter waves. IC board,
It has become possible to apply to IC packages, dielectric antennas, etc.
【図1】本発明のアルミナ質磁器組成物のAl2 O3 、
TiO2 、Nb2 O5 の含有量を表す三成分系組成図で
ある。FIG. 1 is an alumina porcelain composition of the present invention containing Al 2 O 3 ,
FIG. 3 is a three-component composition diagram showing the contents of TiO 2 and Nb 2 O 5 .
Claims (2)
主成分とし、各成分のモル比による組成比が、図1のA
l2 O3 −TiO2 −Nb2 O5 3成分組成図における
線分A−B−C−D−Aで囲まれた範囲内にあることを
特徴とするアルミナ質磁器組成物。 1. A composition containing Al 2 O 3 , TiO 2 and Nb 2 O 5 as main components and having a composition ratio based on a molar ratio of each component is A in FIG.
1 2 O 3 —TiO 2 —Nb 2 O 5 3 Alumina-based porcelain composition characterized by being in a range surrounded by line segment ABCDA in the three-component composition diagram.
とTiO2 を含み、測定周波数8GHzにおける誘電損
失が1×10-3以下、共振周波数の25〜85℃におけ
る温度係数の絶対値|τf|が30ppm以下の請求項
1記載のアルミナ質磁器組成物。2. A crystalline phase of at least α-Al 2 O 3
2. The alumina-based porcelain composition according to claim 1, wherein the dielectric loss at a measurement frequency of 8 GHz is 1 × 10 −3 or less, and the absolute value of the temperature coefficient at resonance frequency of 25 to 85 ° C. | τf | is 30 ppm or less. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20575195A JP3220361B2 (en) | 1995-08-11 | 1995-08-11 | Alumina porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20575195A JP3220361B2 (en) | 1995-08-11 | 1995-08-11 | Alumina porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0952762A true JPH0952762A (en) | 1997-02-25 |
JP3220361B2 JP3220361B2 (en) | 2001-10-22 |
Family
ID=16512061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20575195A Expired - Fee Related JP3220361B2 (en) | 1995-08-11 | 1995-08-11 | Alumina porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3220361B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001021546A1 (en) * | 1999-09-21 | 2001-03-29 | Cts Corporation | Dielectric ceramic composition |
US6242376B1 (en) * | 1999-09-21 | 2001-06-05 | Cts Corporation | Dielectric ceramic composition |
US6549094B2 (en) | 2000-09-08 | 2003-04-15 | Murata Manufacturing Co. Ltd | High frequency ceramic compact, use thereof, and method of producing the same |
US6559083B2 (en) | 2001-04-17 | 2003-05-06 | Cts Corporation | Dielectric ceramic composition |
KR100426219B1 (en) * | 2001-05-18 | 2004-04-06 | 홍국선 | Dielectric Ceramic Compositions and Manufacturing Method of Multilayer components thereof |
JP2020113631A (en) * | 2019-01-10 | 2020-07-27 | 国立大学法人山梨大学 | High frequency superconducting laminate |
-
1995
- 1995-08-11 JP JP20575195A patent/JP3220361B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001021546A1 (en) * | 1999-09-21 | 2001-03-29 | Cts Corporation | Dielectric ceramic composition |
US6242376B1 (en) * | 1999-09-21 | 2001-06-05 | Cts Corporation | Dielectric ceramic composition |
US6549094B2 (en) | 2000-09-08 | 2003-04-15 | Murata Manufacturing Co. Ltd | High frequency ceramic compact, use thereof, and method of producing the same |
US6559083B2 (en) | 2001-04-17 | 2003-05-06 | Cts Corporation | Dielectric ceramic composition |
KR100426219B1 (en) * | 2001-05-18 | 2004-04-06 | 홍국선 | Dielectric Ceramic Compositions and Manufacturing Method of Multilayer components thereof |
JP2020113631A (en) * | 2019-01-10 | 2020-07-27 | 国立大学法人山梨大学 | High frequency superconducting laminate |
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Publication number | Publication date |
---|---|
JP3220361B2 (en) | 2001-10-22 |
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