JP3220359B2 - High frequency dielectric ceramic composition and dielectric resonator - Google Patents
High frequency dielectric ceramic composition and dielectric resonatorInfo
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- JP3220359B2 JP3220359B2 JP19521195A JP19521195A JP3220359B2 JP 3220359 B2 JP3220359 B2 JP 3220359B2 JP 19521195 A JP19521195 A JP 19521195A JP 19521195 A JP19521195 A JP 19521195A JP 3220359 B2 JP3220359 B2 JP 3220359B2
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- high frequency
- resonator
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Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えば、マイクロ
波,ミリ波等の高周波で用いられる高周波用誘電体磁器
組成物に係わり、例えば、マイクロ波,ミリ波集積回路
等のマイクロ波,ミリ波帯域で用いられる回路素子用基
板,誘電体共振器用支持台,誘電体共振器,誘電体導波
路,誘電体アンテナ等の材料として有用な高周波用誘電
体磁器組成物、並びに誘電体磁器を支持台を介して基板
に固定した誘電体共振器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency dielectric ceramic composition used at a high frequency such as a microwave and a millimeter wave, and relates to a microwave and a millimeter wave such as a microwave and a millimeter wave integrated circuit. High frequency dielectric ceramic compositions useful as materials for circuit element substrates, dielectric resonator supports, dielectric resonators, dielectric waveguides, dielectric antennas, etc. used in the band, and supports for dielectric ceramics The present invention relates to a dielectric resonator fixed to a substrate via a substrate.
【0002】[0002]
【従来技術】マイクロ波,ミリ波集積回路をはじめとす
る高周波回路素子では、誘電体磁器を支持部材を介して
基板に固定する構造が採用される場合がある。例えば、
誘電体共振器制御型マイクロ波発信器は、第1図に示す
ように、誘電体磁器1を支持部材2を介して磁器基板3
に取り付け、誘電体磁器1の外部に漏れ出る電磁界Hを
利用して磁器基板3に設けたストリップライン4に結合
させ、これらを金属ケ−ス5に収容させた構造を有して
いる。2. Description of the Related Art In high frequency circuit elements such as microwave and millimeter wave integrated circuits, a structure in which a dielectric porcelain is fixed to a substrate via a supporting member may be adopted. For example,
As shown in FIG. 1, a dielectric resonator control type microwave transmitter includes a dielectric ceramic 1 and a ceramic substrate 3
And is coupled to a strip line 4 provided on the porcelain substrate 3 by utilizing an electromagnetic field H leaking out of the dielectric porcelain 1 and accommodated in a metal case 5.
【0003】この種の高周波回路においては、誘電体磁
器1の電界が支持台2を介して漏れるのを制御すること
によって、無負荷Qの高い共振系が構成されることにな
るため、支持台2には比誘電率が低く誘電損失(tan
δ)が小さい(Q値が大きい)材料を使用する必要があ
る。このため、従来、支持部材材料としては比誘電率が
約7、測定周波数10GHzでのQ値が約15000の
フォルステライトが採用され、また、磁器基板の材料と
しては主として比誘電率が約10、測定周波数10GH
zでのQ値が20000以上のアルミナ磁器が採用され
ていた(例えば、特開昭62−103904号公報等参
照)。In this type of high-frequency circuit, a resonance system with a high no-load Q is formed by controlling the electric field of the dielectric porcelain 1 from leaking through the support 2. No. 2 has a low dielectric constant and a low dielectric loss (tan).
It is necessary to use a material having a small δ) (a large Q value). For this reason, conventionally, forsterite having a relative dielectric constant of about 7 and a Q value of about 15,000 at a measurement frequency of 10 GHz has been employed as a material of the supporting member, and a dielectric constant of about 10 Measurement frequency 10GH
Alumina porcelain having a Q value of 20,000 or more in z has been employed (see, for example, JP-A-62-103904).
【0004】一方、比誘電率が低い材料としては、従
来、比誘電率が4〜6、測定周波数10GHzでのQ値
が2000以下のガラスセラミックが知られている(例
えば、特開昭61−234128号公報等参照)。On the other hand, as a material having a low relative dielectric constant, a glass ceramic having a relative dielectric constant of 4 to 6 and a Q value of 2000 or less at a measurement frequency of 10 GHz has been known (for example, Japanese Patent Application Laid-Open No. Sho 61-61). No. 234128).
【0005】[0005]
【発明が解決しようとする課題】しかしながら、従来用
いられていたアルミナ、及びフォルステライトの比誘電
率はそれぞれ約10及び約7程度であり、近年における
高周波数帯の誘電体共振器の普及に伴い、より低い比誘
電率の材料が求められていた。However, the relative dielectric constants of alumina and forsterite, which have been conventionally used, are about 10 and about 7, respectively. Therefore, a material having a lower relative dielectric constant has been demanded.
【0006】一方、低誘電率材料として用いられている
ガラスセラミック等の磁器は比誘電率が約4〜6と小さ
く、Q値が10GHzで2000以下であり、近年にお
ける高周波数帯の誘電体共振器の普及に伴い、より高い
Q値の低誘電率材料が求められていた。On the other hand, porcelain such as glass ceramic used as a low dielectric constant material has a small relative dielectric constant of about 4 to 6, a Q value of 2000 or less at 10 GHz, and a dielectric resonance in a high frequency band in recent years. With the widespread use of devices, a low Q material having a higher Q value has been demanded.
【0007】また、共振器の磁器基板に主として使用さ
れているアルミナ磁器は比誘電率が約10と比較的高
く、高インピ−ダンスのストリップラインを形成しよう
とすると、ライン幅が小さくなりすぎて(通常1μm以
下)、断線が生じたり、相対的なライン幅のばらつきが
大きくなり、マイクロ波集積回路の不良率が増大すると
いう問題があった。他方、この種の磁器基板におけるス
トリップラインのインピ−ダンスは、基板の厚さが一定
であれば、その比誘電率及びストリップラインの幅にそ
れぞれ反比例するため、ライン幅を小さくする代わり
に、比誘電率の低い基板材料を使用することによっても
インピ−ダンスを高めることができ、このため,より低
誘電率材料が求められていた。Alumina porcelain, which is mainly used for a porcelain substrate of a resonator, has a relatively high relative dielectric constant of about 10, and the line width becomes too small to form a high impedance strip line. (Usually 1 μm or less), there is a problem that disconnection occurs, the relative line width varies greatly, and the defect rate of the microwave integrated circuit increases. On the other hand, the impedance of the strip line in this type of porcelain substrate is inversely proportional to the relative permittivity and the width of the strip line, respectively, if the substrate thickness is constant. By using a substrate material having a low dielectric constant, the impedance can be increased, and therefore, a material having a lower dielectric constant has been demanded.
【0008】本発明は、アルミナ,フォルステライトよ
りも低い比誘電率を有し、かつ、ガラスセラミックより
も高いQ値を有する高周波用誘電体磁器組成物を提供す
ることをことを目的とする。It is an object of the present invention to provide a high frequency dielectric ceramic composition having a lower dielectric constant than alumina and forsterite and a higher Q value than glass ceramic.
【0009】[0009]
【課題を解決するための手段】本発明者等は、前記課題
を解決すべく鋭意検討した結果、金属元素として、M
g,Al,Siのみからなり、これらの元素の酸化物に
よるモル比組成式をxMgO−yAl2 O3 −zSiO
2 と表した時にx,y,zが一定の値である場合には、
アルミナ、フォルステライトよりも低い比誘電率を有
し、かつ、ガラスセラミックよりも高いQ値を有する高
周波用誘電体磁器組成物を得ることができることを見い
出し、本発明に至った。Means for Solving the Problems The present inventors have conducted intensive studies in order to solve the above-mentioned problems, and as a result, M
g, Al, made of Si only, xMgO-yAl 2 O 3 -zSiO the molar ratio composition formula of an oxide of these elements
If x, y, and z are constant values when expressed as 2 ,
The present inventors have found that it is possible to obtain a dielectric ceramic composition for high frequencies having a lower dielectric constant than alumina and forsterite and a higher Q value than glass ceramic, and have reached the present invention.
【0010】即ち、本発明の高周波用誘電体磁器組成物
は、金属元素としてMg,Al,Siからなる複合酸化
物であって、各金属元素の酸化物によるモル比組成式を
xMgO−yAl2 O3 −zSiO2 と表した時、前記
x,y,zが10≦x≦40、10≦y≦40、20≦
z≦80、x+y+z=100を満足するとともに、比
誘電率が6以下で、かつ、測定周波数10GHzでのQ
値が2000以上のものである。That is, the dielectric ceramic composition for high frequencies of the present invention is a composite oxide composed of Mg, Al, and Si as metal elements, and the molar ratio composition formula of each metal element is xMgO-yAl 2. When expressed as O 3 -zSiO 2 , the x, y, and z are 10 ≦ x ≦ 40, 10 ≦ y ≦ 40, 20 ≦
z ≦ 80, x + y + z = 100, the relative dielectric constant is 6 or less, and Q at a measurement frequency of 10 GHz.
The value is 2000 or more.
【0011】また、本発明の誘電体共振器は、基板上に
支持部材を介して誘電体磁器を固定してなる誘電体共振
器において、支持部材および/または基板が、金属元素
としてMg,Al,Siからなる複合酸化物であって、
各金属元素の酸化物によるモル比組成式をxMgO−y
Al2 O3 −zSiO2 と表した時、前記x,y,zが
10≦x≦40、10≦y≦40、20≦z≦80、x
+y+z=100を満足するとともに、比誘電率が6以
下で、かつ、測定周波数10GHzでのQ値が2000
以上のものである。Further, the dielectric resonator according to the present invention is a dielectric resonator in which a dielectric ceramic is fixed on a substrate via a supporting member, wherein the supporting member and / or the substrate has Mg, Al as a metal element. , A composite oxide comprising Si,
The molar ratio composition formula of the oxide of each metal element is xMgO-y
When expressed as Al 2 O 3 -zSiO 2 , the x, y, and z are 10 ≦ x ≦ 40, 10 ≦ y ≦ 40, 20 ≦ z ≦ 80, x
+ Y + z = 100, the relative dielectric constant is 6 or less, and the Q value at the measurement frequency of 10 GHz is 2,000.
That's all.
【0012】[0012]
【作用】本発明の誘電体磁器組成物では、比誘電率が4
〜6、測定周波数10GHzでのQ値が2000以上の
低誘電率および高Q値の誘電体磁器を、例えば、誘電体
共振器の支持部材または基板に用いることにより、高イ
ンピーダンスのマイクロ波用集積回路などの高周波用回
路素子を信頼性を損なうことなく製造することができ
る。The dielectric ceramic composition of the present invention has a relative dielectric constant of 4
6, a high-impedance microwave integration using a low-permittivity and high-Q dielectric ceramic having a Q value of 2000 or more at a measurement frequency of 10 GHz for a support member or a substrate of a dielectric resonator, for example. High-frequency circuit elements such as circuits can be manufactured without loss of reliability.
【0013】[0013]
【発明の実施の形態】本発明の高周波用誘電体磁器組成
物の成分組成を前記範囲に限定したのは、次の理由によ
る。即ち、MgOのモル百分率を示すxを10〜40と
したのは、10未満では良好な焼結体が得られずQ値が
低く、また40を越えると比誘電率が高くなるからであ
る。特にMgO量を示すxは、Q値を5000以上とす
るという点から15〜35が望ましい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The components of the high frequency dielectric ceramic composition of the present invention are limited to the above ranges for the following reasons. That is, the reason why x indicating the molar percentage of MgO is set to 10 to 40 is that if it is less than 10, a good sintered body cannot be obtained and the Q value is low, and if it exceeds 40, the relative dielectric constant becomes high. In particular, x indicating the amount of MgO is preferably 15 to 35 from the viewpoint that the Q value is 5000 or more.
【0014】また、Al2 O3 のモル百分率を示すyを
10〜40としたのは、Al2 O3量yが10よりも小
さい場合には、良好な焼結体が得られず、またQ値が低
くなり、40を越えると比誘電率が高くなるからであ
る。Al2 O3 量を示すyは、Q値を5000以上とす
るという点から15〜35が望ましい。Further, to that 10 to 40 and y indicating the molar percentage of Al 2 O 3 is, when the amount of Al 2 O 3 y is less than 10 is not good sintered body can be obtained and This is because the Q value decreases, and when the Q value exceeds 40, the relative dielectric constant increases. The value of y indicating the amount of Al 2 O 3 is preferably from 15 to 35 from the viewpoint that the Q value is 5000 or more.
【0015】SiO2 のモル百分率zを20≦z≦80
としたのは、zが20よりも小さい場合には比誘電率が
大きくなり、80を越えると良好な焼結体が得られずQ
値が低くなる。SiO2 量を示すzは、Q値を5000
以上とするという点から30〜70が望ましい。When the molar percentage z of SiO 2 is 20 ≦ z ≦ 80
The reason is that when z is smaller than 20, the relative permittivity becomes large, and when z exceeds 80, a good sintered body cannot be obtained and Q
The value decreases. Z indicating the amount of SiO 2 indicates that the Q value is 5000
From the viewpoint of the above, 30 to 70 is desirable.
【0016】本発明の高周波用誘電体磁器組成物は、Q
値を5000以上とするためには15≦x≦35、15
≦y≦35、30≦z≦70を満足することが望まし
く、さらに、Q値を7000以上とするためには20≦
x≦30、17≦y≦30、40≦z≦60を満足する
ことが望ましい。The dielectric ceramic composition for a high frequency wave of the present invention has Q
To make the value 5000 or more, 15 ≦ x ≦ 35, 15
≤ y ≤ 35 and 30 ≤ z ≤ 70, and in order to make the Q value 7000 or more, 20 ≤
It is desirable to satisfy x ≦ 30, 17 ≦ y ≦ 30, and 40 ≦ z ≦ 60.
【0017】測定周波数10GHzでのQ値が2000
以上を満足するようにしたのは、Q値が2000以上あ
る場合には、近年における高周波数帯の誘電体共振器に
も十分対応することができるからである。Q値は、高け
れば高い程望ましいが、特には、測定周波数10GHz
でのQ値が5000以上であることが望ましい。When the Q value at a measurement frequency of 10 GHz is 2000
The reason for satisfying the above is that when the Q value is 2000 or more, it is possible to sufficiently cope with recent high frequency band dielectric resonators. The Q value is preferably as high as possible, but in particular, the measurement frequency is 10 GHz.
Is preferably 5000 or more.
【0018】また、本発明の誘電体磁器組成物では、図
2に示すように、主結晶相がコージェライトであり、他
に結晶相として、ムライト,スピネル,プロトエンスタ
タイト,クリノエンスタタイト,フォルステライト,ク
リストバライト,トリジマイト,コランダム等が析出す
る場合があるが、組成によってその析出相が異なる。In the dielectric porcelain composition of the present invention, as shown in FIG. 2, the main crystal phase is cordierite, and the other crystal phases are mullite, spinel, protoenstatite, clinoenstatite, and phorite. In some cases, stellite, cristobalite, tridymite, corundum, etc. are precipitated, but the precipitated phase differs depending on the composition.
【0019】本発明の誘電体磁器組成物では、コージェ
ライトのみからなる結晶相であっても良い。In the dielectric porcelain composition of the present invention, a crystalline phase consisting of cordierite alone may be used.
【0020】また、本発明の誘電体共振器は、図1に示
すように、基板3上に支持部材2を介して誘電体磁器1
を固定してなり、支持部材2または基板3、或いは支持
部材2及び基板3が、上記誘電体磁器組成物からなるも
のである。As shown in FIG. 1, the dielectric resonator according to the present invention comprises a dielectric ceramic 1 on a substrate 3 via a support member 2.
Is fixed, and the support member 2 or the substrate 3 or the support member 2 and the substrate 3 are made of the above-described dielectric ceramic composition.
【0021】本発明の誘電体磁器は、原料粉末として、
例えば、MgCO3 粉末,Al2 O3 粉末,SiO2 粉
末を用い、所定の割合で秤量し、湿式混合した後乾燥
し、この混合物を大気中において1100〜1300℃
で仮焼した後、粉砕した。得られた粉末に適量のバイン
ダを加えて成形し、この成形体を大気中1300〜14
50℃で焼成することにより得られる。特に、コージェ
ライトを主結晶相とする誘電体磁器は難焼結性であるた
め、適正な焼成温度捜し出し、焼成温度を厳密に制御し
て焼成する必要がある。The dielectric porcelain of the present invention comprises,
For example, MgCO 3 powder, Al 2 O 3 powder, and SiO 2 powder are weighed at a predetermined ratio, wet-mixed and dried, and the mixture is dried at 1100 to 1300 ° C. in the atmosphere.
After calcining with, it was pulverized. An appropriate amount of a binder is added to the obtained powder to form a compact.
It is obtained by firing at 50 ° C. In particular, since dielectric porcelain having cordierite as a main crystal phase is difficult to sinter, it is necessary to find an appropriate firing temperature, and to fire at a strictly controlled firing temperature.
【0022】尚、本発明の誘電体磁器組成物は、金属元
素として、Mg,Al,Siのみからなるものである
が、例えば、粉砕ボールや原料粉末の不純物として、Z
r,Ni,Fe,Cr,Ca,P,Na,Ti等が混入
する場合があるが、この場合も、上記組成を満足する限
り低誘電率で、高Q値の磁器を得ることができる。The dielectric porcelain composition of the present invention is composed of only Mg, Al, and Si as metal elements.
There are cases where r, Ni, Fe, Cr, Ca, P, Na, Ti, etc. are mixed. In this case, too, a ceramic having a low dielectric constant and a high Q value can be obtained as long as the above composition is satisfied.
【0023】また、本発明の誘電体磁器組成物では、低
誘電率および高Q値が求められるものであれば、例え
ば、回路素子用基板,誘電体共振器の誘電体磁器,誘電
体導波路,誘電体アンテナ等、どのようなものでも適用
できるが、上記したように、誘電体共振器の支持部材ま
たは基板に最適である。In the dielectric ceramic composition of the present invention, if a low dielectric constant and a high Q value are required, for example, a circuit element substrate, a dielectric ceramic of a dielectric resonator, a dielectric waveguide Any material such as a dielectric antenna and the like can be applied, but as described above, it is most suitable for a support member or a substrate of a dielectric resonator.
【0024】[0024]
【実施例】原料粉末として純度99%のMgCO3 、純
度99.7%のAl2 O3 、純度99.4%のSiO2
粉末を用い、これらを焼結体が表1に示す組成となるよ
うに秤量し、15時間湿式混合した後、乾燥し、この混
合物を1200℃2時間仮焼した後、粉砕した。得られ
た粉末に適量のバインダを加えて造粒し、これを100
0kg/cm2 の圧力の下で成形して直径12mm厚さ
8mmの成形体を得た。この成形体を大気中1300〜
1450℃で2時間焼成して誘電体磁器試料を得た。EXAMPLE As raw material powder, 99% pure MgCO 3 , 99.7% pure Al 2 O 3 , 99.4% pure SiO 2
Using powders, these were weighed so that the sintered bodies had the composition shown in Table 1, wet-mixed for 15 hours, dried, calcined at 1200 ° C for 2 hours, and pulverized. An appropriate amount of a binder was added to the obtained powder and granulated.
It was molded under a pressure of 0 kg / cm 2 to obtain a molded body having a diameter of 12 mm and a thickness of 8 mm. This molded body is placed in the atmosphere at 1300
The resultant was fired at 1450 ° C. for 2 hours to obtain a dielectric ceramic sample.
【0025】この試料を用いて誘電体円柱共振器法にて
周波数10GHzにおける比誘電率とQ値を測定し、そ
の結果を表1に示す。Using this sample, the relative dielectric constant and Q value at a frequency of 10 GHz were measured by the dielectric cylinder resonator method, and the results are shown in Table 1.
【0026】[0026]
【表1】 [Table 1]
【0027】表1によれば、本発明に係る高周波用誘電
体磁器組成物は、比誘電率が4〜6と低く、しかも測定
周波数10GHzでのQ値が2000以上と高い値を示
すことがわかる。According to Table 1, the dielectric ceramic composition for high frequency according to the present invention has a low relative dielectric constant of 4 to 6 and a high Q value of 2000 or more at a measurement frequency of 10 GHz. Understand.
【0028】尚、図2に試料No.5のX線回折チャート
図を示す。この図2から、コージェライトの他に、プロ
トエンスタタイト,スピネルが析出していることが判
る。また、図3に本発明の組成範囲および試料の組成を
示す3元図を示す。FIG. 2 shows an X-ray diffraction chart of Sample No. 5. From FIG. 2, it can be seen that, in addition to cordierite, protoenstatite and spinel are precipitated. FIG. 3 is a ternary diagram showing the composition range of the present invention and the composition of the sample.
【0029】[0029]
【発明の効果】本発明の高周波用誘電体磁器組成物で
は、4〜6の低い比誘電率を有し、10GHzでのQ値
が2000以上の高いQ値を示す磁器が得られ、例え
ば、誘電体共振器の支持部材または基板に用いることに
より、高インピーダンスのマイクロ波用集積回路などの
高周波用回路素子を信頼性を損なうことなく製造するこ
とができる。また、低誘電率および高Q値であるため、
例えば、マイクロ波,ミリ波集積回路等のマイクロ波,
ミリ波帯域で用いられる回路素子用基板,誘電体共振器
用支持台,誘電体共振器,誘電体導波路,誘電体アンテ
ナ等の材料として最適である。According to the dielectric ceramic composition for a high frequency wave of the present invention, a porcelain having a low relative dielectric constant of 4 to 6 and a high Q value of 2000 or more at 10 GHz can be obtained. By using the dielectric resonator as a support member or a substrate, a high-frequency circuit element such as a high-impedance microwave integrated circuit can be manufactured without deteriorating reliability. Also, because of its low dielectric constant and high Q value,
For example, microwaves, such as microwaves and millimeter-wave integrated circuits,
It is most suitable as a material for a circuit element substrate, a dielectric resonator support, a dielectric resonator, a dielectric waveguide, a dielectric antenna, etc. used in the millimeter wave band.
【図1】高周波用回路素子の一例を示す誘電体共振器制
御型マイクロ波発信器の概略断面図である。FIG. 1 is a schematic cross-sectional view of a dielectric resonator control type microwave transmitter showing an example of a high-frequency circuit element.
【図2】試料No.5の結晶構造を示すX線回折図であ
る。FIG. 5 is an X-ray diffraction diagram showing the crystal structure of Sample No. 5. FIG.
【図3】本発明に係る高周波用誘電体磁器組成物の組成
範囲を示す三元組成図である。FIG. 3 is a ternary composition diagram showing the composition range of the dielectric ceramic composition for high frequencies according to the present invention.
1・・・誘電体磁器 2・・・支持部材 3・・・磁器基板 DESCRIPTION OF SYMBOLS 1 ... Dielectric porcelain 2 ... Support member 3 ... Porcelain board
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C04B 35/00 - 35/22 C04B 35/42 - 35/49 CA(STN) REGISTRY(STN)────────────────────────────────────────────────── ─── Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) C04B 35/00-35/22 C04B 35/42-35/49 CA (STN) REGISTRY (STN)
Claims (2)
複合酸化物であって、各金属元素の酸化物によるモル比
組成式を xMgO−yAl2 O3 −zSiO2 と表した時、前記x,y,zが 10≦x≦40 10≦y≦40 20≦z≦80 x+y+z=100 を満足するとともに、比誘電率が6以下、かつ、測定周
波数10GHzでのQ値が2000以上であることを特
徴とする高周波用誘電体磁器組成物。A composite oxide comprising Mg, Al, and Si as metal elements, wherein the molar ratio composition formula of each metal element oxide is represented by xMgO-yAl 2 O 3 -zSiO 2 , , Y, z satisfy 10 ≦ x ≦ 40 10 ≦ y ≦ 40 20 ≦ z ≦ 80 x + y + z = 100, have a relative permittivity of 6 or less, and a Q value of 2000 or more at a measurement frequency of 10 GHz. A dielectric ceramic composition for high frequency, comprising:
定してなる誘電体共振器において、前記基板および/ま
たは前記支持部材が、金属元素としてMg,Al,Si
からなる複合酸化物であって、各金属元素の酸化物によ
るモル比組成式を xMgO−yAl2 O3 −zSiO2 と表した時、前記x,y,zが 10≦x≦40 10≦y≦40 20≦z≦80 x+y+z=100 を満足するとともに、比誘電率が6以下、かつ、測定周
波数10GHzでのQ値が2000以上であることを特
徴とする誘電体共振器。2. A dielectric resonator in which a dielectric ceramic is fixed on a substrate via a supporting member, wherein said substrate and / or said supporting member is composed of Mg, Al, Si as a metal element.
Wherein the molar ratio composition formula of the oxide of each metal element is represented by xMgO—yAl 2 O 3 —zSiO 2 , wherein x, y, and z are 10 ≦ x ≦ 40 10 ≦ y ≦ 40 20 ≦ z ≦ 80 x + y + z = 100, a dielectric resonator having a relative dielectric constant of 6 or less and a Q value at a measurement frequency of 10 GHz of 2,000 or more.
Priority Applications (1)
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JP19521195A JP3220359B2 (en) | 1995-07-31 | 1995-07-31 | High frequency dielectric ceramic composition and dielectric resonator |
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JP19521195A JP3220359B2 (en) | 1995-07-31 | 1995-07-31 | High frequency dielectric ceramic composition and dielectric resonator |
Publications (2)
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JPH0948661A JPH0948661A (en) | 1997-02-18 |
JP3220359B2 true JP3220359B2 (en) | 2001-10-22 |
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JP3559495B2 (en) * | 2000-03-28 | 2004-09-02 | 京セラ株式会社 | Dielectric ceramic composition, dielectric resonator using the same, and nonradiative dielectric line |
CN115504776B (en) * | 2022-09-28 | 2023-07-28 | 隆地华创(浙江)科技有限公司 | Y (Y) (3-x) R x MgAl 3 SiO 12 Garnet type microwave dielectric ceramic material and preparation method thereof |
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