JPH09162341A - Package for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make airtight sealing of a package for a semiconductor device by preventing cracks in an insulating substrate. SOLUTION: This package consists of an insulating substrate 1, which has a mounting section 1a for mounting a semiconductor device 3 on its upper face and a radiator 9 joined to its lower face via brazing material 10, and a cover 2. In the inside of the package, a space for housing the semiconductor device 3 is formed. The difference in thermal expansion between the insulating substrate 1 and the radiator 9 is 10×10<-6> / deg.C or above. The insulating substrate 1 and the radiator 9 are joined to each other, with frame-like unjoined regions 10a formed in a part of a region between the substrate 1 and the radiator 9 which is outside a region that faces the mounting section 1a where the semiconductor device 3 is mounted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element such as an LSI (Large Scale Integrated Circuit Element).

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element is made of an electric material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, or a silicon carbide sintered body. Insulation made of an insulating material and having a plurality of metallized wiring layers made of a refractory metal powder such as tungsten, molybdenum, manganese, etc., which is led out from the periphery of the depression to the outer peripheral edge and is made of an insulating material for mounting and housing a semiconductor element. The bottom surface of the insulating base is composed of a base, an external lead terminal attached to the metallized wiring layer via a brazing material such as silver brazing for connecting the semiconductor element to an external electric circuit, and a lid. The semiconductor element is mounted and fixed on the semiconductor element via an adhesive such as a brazing material, glass, or resin, and each electrode of the semiconductor element is metalized via a bonding wire. Electrically connected, thereafter, the semiconductor device as a product by housing the semiconductor element hermetically in the container interior made of an insulating base and the lid.

In the above package for housing a semiconductor element, a metallized metal layer made of a refractory metal powder such as tungsten or molybdenum and a nickel plating layer are sequentially deposited on the lower surface of an insulating substrate, and the nickel plating layer is coated. A radiator made of copper is bonded to the deposited metallized metal layer via a brazing material such as silver brazing.

The heat radiator has the function of absorbing the heat generated when the semiconductor element is operated and dissipating the absorbed heat into the atmosphere, whereby the semiconductor element is always kept at an appropriate temperature, causing thermal destruction and thermal change in its characteristics. It is possible to operate stably without doing.

Incidentally, the heat radiator is joined to the metallized metal layer deposited on the lower surface of the insulating substrate by placing the heat radiator on the metallized metal layer on the lower surface of the insulating substrate with a plate-shaped silver brazing material interposed therebetween. And place the silver wax in a reducing atmosphere for about 8 minutes.
It is carried out by heating and melting at a temperature of 50 ° C.

[0006]

However, in this conventional package for accommodating semiconductor elements, the radiator is made of copper, and the copper has a coefficient of thermal expansion of 17 × 10 ⁻⁶ /
The thermal expansion coefficient of the aluminum oxide sintered body, the mullite sintered body, the aluminum nitride sintered body, the silicon carbide sintered body, etc. which form the insulating substrate at ℃ (the thermal expansion coefficient of the aluminum oxide sintered body is Approximately 7 × 10 ^-6 / ° C, the thermal expansion coefficient of the mullite sintered body is approximately 4 × 10 ^-6 / ° C, the thermal expansion coefficient of the aluminum nitride sintered body is approximately 4 × 10 ^-6 / ° C, silicon carbide Coefficient of thermal expansion of a sintered compact is about 3 × 10 ^-6 / ° C) and is about 10 × 10 ^-6
/ ° C or more, and the heat radiator is so designed that one surface of the heat radiator is widely bonded to the lower surface of the insulating base. When they are joined together, a large thermal stress is generated between the insulating base and the heat radiator due to the difference in the thermal expansion coefficient between the two, and the thermal stress causes cracks or cracks in the insulating base. However, the airtight sealing of the container is broken, and the semiconductor element housed inside the container cannot operate normally and stably for a long period of time.

[0007]

SUMMARY OF THE INVENTION According to the present invention, there is provided an insulating base having a mounting portion on which a semiconductor element is mounted on an upper surface, and a radiator being bonded to the lower surface via a brazing material, and a lid. Consists of
A semiconductor element housing package having a space for housing a semiconductor element therein, wherein a difference in thermal expansion between the insulating base and the heat radiator is 10 × 10 ⁻⁶ / ° C. or more, and the insulating base and the heat radiator. Are bonded to each other by providing a frame-shaped non-bonding region outside the region facing the mounting portion on which the semiconductor element is mounted.

According to the semiconductor element accommodating package of the present invention, the insulating base body and the heat dissipating body are joined to each other by providing a frame-shaped non-joining area outside the area facing the mounting portion on which the semiconductor element is mounted. As a result, the thermal expansion difference between the insulating base and the radiator is 10 × 10 ⁻⁶ / ° C. or more, and even if a large thermal stress is generated between the insulating base and the radiator when joining them, the thermal stress Is absorbed and dispersed in the non-bonding region and becomes small, and as a result, cracks and cracks are hardly generated in the insulating substrate, whereby the hermetic sealing of the container can be completed.

Further, the non-bonding region is formed outside a region facing the mounting portion on which the semiconductor element is mounted, and a radiator is provided in the region facing the mounting portion on which the semiconductor element is mounted. Since they are completely bonded, the heat generated during the operation of the semiconductor element is satisfactorily transferred to and absorbed by the radiator through the insulating base, and as a result, the semiconductor element can always be operated at a proper temperature and stably and normally operated. .

[0010]

DETAILED DESCRIPTION OF THE INVENTION The present invention will now be described in detail with reference to the accompanying drawings.

FIG. 1 shows an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an insulating base and 2 is a lid.
The insulating base 1 and the lid 2 constitute an insulating container 4 for housing the semiconductor element 3.

The insulating substrate 1 has a semiconductor element 3 on its upper surface.
Has a recessed mounting portion 1a in which the semiconductor element 3 is mounted and accommodated, and the semiconductor element 3 is mounted on the mounting portion 1a, and is fixed by adhesion through an adhesive such as glass, resin, or brazing material. It

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. In the case of consisting of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc., a suitable organic binder, a solvent, etc. are added and mixed to prepare a sludge, and the sludge is subjected to a doctor blade method or a calendar roll. By adopting the method, a ceramic green sheet (ceramic green sheet) is formed, and thereafter, the ceramic green sheet is appropriately punched and a plurality of these are laminated to obtain about 1
It is manufactured by firing at a temperature of 600 ° C.

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the recessed mounting portion 1a to the outer peripheral edge thereof, and the mounting portion 1a of the metallized wiring layer 5 is deposited.
Each electrode of the semiconductor element 3 is electrically connected to the peripheral portion through the bonding wire 6, and an external lead terminal 7 connected to an external electric circuit is provided at a portion led to the outer peripheral edge of the upper surface of the insulating substrate 1. It is attached by brazing through a brazing material such as silver brazing.

The metallized wiring layer 5 acts as a conductive path when each electrode of the semiconductor element 3 is connected to an external electric circuit, and is formed of a refractory metal powder such as tungsten, molybdenum or manganese.

For the metallized wiring layer 5, a metal paste obtained by adding and mixing a suitable organic binder, a solvent, etc. to a refractory metal powder such as tungsten, molybdenum, manganese, etc. is previously formed on the ceramic green sheet which becomes the insulating substrate 1. The concave mounting portion 1 of the insulating substrate 1 is formed by printing and applying a predetermined pattern by a conventionally known screen printing method.
It is adhered and formed from the periphery of a to the outer peripheral edge.

On the exposed surface of the metallized wiring layer 5, a metal such as nickel and gold having excellent corrosion resistance and wettability with a brazing material is applied by plating to a thickness of 1.0 μm to 20 μm. The metallized wiring layer 5
It is possible to effectively prevent the above-mentioned oxidative corrosion and to firmly braze the external lead terminal 7 to the metallized wiring layer 5. Therefore, the metallized wiring layer 5
The exposed surface is made of a metal such as nickel, gold, etc., which has excellent corrosion resistance and wettability with the brazing material, and is 1.0 μm to
It is preferable to layer them to a thickness of 20 μm.

Further, external lead terminals 7 are brazed and attached to the metallized wiring layer 5 via a brazing material such as silver solder, and the external lead terminals 7 are each of the semiconductor elements 3 housed in the container 4. The semiconductor element 3 housed inside the container 4 serves to electrically connect the electrodes to an external electric circuit and to connect the external lead terminal 7 to the external electric circuit. It will be connected to an external electric circuit via.

The external lead terminal 7 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy.
For example, an ingot (lump) made of a metal such as an iron-nickel-cobalt alloy is formed into a predetermined shape by adopting a conventionally known metal processing method such as a rolling processing method or a punching processing method.

Further, the insulating base body 1 to which the external lead terminals 7 are attached has a metallized metal layer 8 adhered to the lower surface thereof, and the radiator 9 is a brazing material 10 such as silver solder on the metallized metal layer 8. Is attached via.

The metallized metal layer 8 acts as a base metal layer for attaching the heat radiator 9 to the insulating substrate 1, is made of a refractory metal powder such as tungsten or molybdenum, and is the same as the metallized wiring layer 5 described above. It is applied to the lower surface of the insulating substrate 1 by a method.

A brazing material 10 is formed on the metallized metal layer 8.
The heat dissipating member 9 attached via the heat absorbing member 9 absorbs heat generated when the semiconductor element 3 operates and dissipates it into the atmosphere, and is made of a metal material such as copper or aluminum.

When the radiator 9 is made of copper such as oxygen-free copper, the thermal conductivity of the copper is about 400 W / m.
Since it is as high as K and easily conducts heat, the heat generated when the semiconductor element 3 operates is well absorbed by the heat radiator 9 through the insulating base body 1 and is efficiently dissipated into the atmosphere.
The semiconductor element 3 is always at an appropriate temperature, and can operate normally and stably for a long period of time.

The radiator 9 is formed in a predetermined plate shape by subjecting an ingot (lump) made of a metal material such as copper to a conventionally known metal working method such as a rolling working method or a punching working method. To be done.

The heat dissipating member 9 is attached to the lower surface of the insulating base 1 by using a brazing material paste obtained by adding and mixing an organic solvent and a solvent to the silver brazing powder on the metallized metal layer 8 on the lower surface of the insulating base 1. A wax material such as silver wax or the like is applied by printing, and a radiator 9 is placed on the solder material, which is then heated in a reducing atmosphere to a temperature of about 850 ° C. It is performed by melting the brazing material and the plate-shaped brazing material inside.

Further, in the attachment of the heat radiator 9 to the lower surface of the insulating substrate 1 via the brazing material 10, a frame-shaped non-bonding is provided outside the region facing the mounting portion 1a on which the semiconductor element 3 is mounted. A region 10a is provided, and the non-bonding region 10a allows the insulating substrate 1 to be an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, or the like, and the radiator 9 It is assumed that the thermal expansion difference between the insulating base 1 and the radiator 9 is 10 × 10 ⁻⁶ / ° C. or more, and a large thermal stress is generated between the insulating base 1 and the radiator 9 when the insulating base 1 and the radiator 9 are bonded to each other. However, the thermal stress is absorbed and dispersed in the non-bonding region 10a and becomes small, and as a result, the insulating substrate 1 is hardly cracked or cracked, whereby the hermetic sealing of the container can be completed.

The non-bonding region 10a is also used as the semiconductor element 3
Is formed outside the area facing the mounting section 1a on which the semiconductor element 3 is mounted, the area on the lower surface of the insulating substrate 1 facing the mounting section 1a on which the semiconductor element 3 is mounted is attached to the radiator 9. As a result of the complete bonding through the material 10, the heat generated during the operation of the semiconductor element 3 is satisfactorily transferred and absorbed by the radiator 9 through the insulating substrate 1, and the semiconductor element 3 is always kept at a proper temperature and stable.
It can also be operated normally.

The non-bonding region 10a formed between the lower surface of the insulating base 1 and the heat dissipating member 9 is mounted on the lower surface of the insulating base 1 in advance with the metallized metal layer 8 on which the semiconductor element 3 is mounted. It is formed at a predetermined position by providing a frame-shaped notch outside the region facing the placing portion 1a to be placed.

If the area of the frame-shaped non-bonding region 10a is less than 10% of the total facing area of the lower surface of the insulating base 1 and the upper surface of the radiator 9, the heat between the insulating base 1 and the radiator 9 is reduced. It becomes difficult to completely absorb the thermal stress generated due to the difference in the expansion coefficient in the non-bonding region 10a, and when it exceeds 50%, the heat generated by the semiconductor element 3 is radiated to the radiator 9 via the insulating base 1. It becomes difficult to efficiently transmit and absorb.
Therefore, the area of the frame-shaped non-bonding region 10a is 10 with respect to the total facing area of the lower surface of the insulating substrate 1 and the upper surface of the radiator 9.
% To 50% is preferable.

Thus, according to the package for housing a semiconductor element described above, the semiconductor element 3
Is mounted and fixed via an adhesive made of glass, resin, brazing material or the like, and each electrode of the semiconductor element 3 is connected to a predetermined metallized wiring layer 5 via a bonding wire 6; The lid body 2 is joined to the upper surface of 1 through a sealing material made of glass, resin, brazing material, or the like,
A semiconductor device as a product is obtained by hermetically housing the semiconductor element 3 in a container 4 composed of an insulating substrate 1 and a lid 2.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

[0032]

According to the package for accommodating a semiconductor element of the present invention, a frame-shaped non-bonding area is provided outside the area opposed to the mounting portion on which the semiconductor element is mounted. Since the insulating base and the heat radiator have a thermal expansion difference of 10 × 10 ⁻⁶ / ° C. or more, even if a large thermal stress is generated between the two when the insulating base and the heat sink are joined. The thermal stress is absorbed and dispersed in the non-bonding region and becomes small, and as a result, cracks and cracks are hardly generated in the insulating substrate, whereby the hermetic sealing of the container can be completed.

Further, the non-bonding region is formed outside the region facing the mounting part on which the semiconductor element is mounted, and the heat radiator is provided in the region facing the mounting part on which the semiconductor element is mounted. Since they are completely bonded, the heat generated during the operation of the semiconductor element is satisfactorily transferred to and absorbed by the radiator through the insulating base, and as a result, the semiconductor element can always be operated at a proper temperature and stably and normally operated. .

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

[Description of sign]

 1 ... Insulating substrate 1a ... Semiconductor element mounting portion 2 ... Lid 3 ... Semiconductor element 4 ... Insulation container 5 Metallization wiring layer 7 External lead terminals 8 Metallization metal layer 9 ..Heat radiator 10 ...... Brazing material 10a ........ Non-bonding area

Claims (2)

[Claims] Claims: 1. An insulating base having a mounting portion on the upper surface of which a semiconductor element is mounted, and a heat radiator bonded to the lower surface via a brazing material, and a lid. A semiconductor element housing package having a space for housing, wherein a difference in thermal expansion between the insulating base and the heat radiator is 10 × 10 ^-6 /
A semiconductor having a temperature of not less than 0 ° C. and a heat dissipating body bonded to each other by providing a frame-shaped non-bonding region outside a region facing a mounting portion on which a semiconductor element is mounted. Device storage package. 2. The package for housing a semiconductor element according to claim 1, wherein the area of the frame-shaped non-bonding region is 10 to 50% of the total facing area of the insulating substrate and the heat radiator. .