JP2000183199A - Package for housing semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a light package for housing a semiconductor element which can keep a semiconductor element housed inside at a proper temperature and operate it normally and stably. SOLUTION: The package for housing a semiconductor element consists of a frame-like substrate 1, a heat sink 2 inserted in a hole part of the substrate 1, a frame-like wall member 3 fixed to an upper surface of the substrate 1 and a lid body 4 which closes an inside of the wall member 3. The substrate 1 is formed of aluminum oxide sintered body, aluminum nitride sintered body, silicon carbide sintering body and silicon nitride sintered body. The heat sink 2 is formed by applying a metallic layer with a three-layer structure of a bonding layer consisting of at least one kind of titanium, zirconium, vanadium or alloy mainly composed of them, an intermediate layer formed of copper, and a main layer formed of molybdenum, to both upper and lower surfaces of a core body 11 formed of unidirectional composite material wherein carbon fiber arranged in a thickness direction is coupled by carbon.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device such as an LSI (Large Scale Integrated Circuit).

[0002]

2. Description of the Related Art Conventionally, a package for housing a semiconductor element for housing a semiconductor element is generally made of an electrically insulating material such as a sintered body of aluminum oxide, and has an insulating base having a concave portion for housing the semiconductor element on an upper surface thereof. Connecting a plurality of metallized wiring layers made of a refractory metal powder such as tungsten, molybdenum, manganese, etc., from the periphery of the concave portion to the outer peripheral edge of the insulating base, and connecting the semiconductor element housed therein to an external electric circuit And an external lead terminal attached to the metallized wiring layer via a brazing material such as silver brazing, and a lid. The semiconductor element is formed on the bottom surface of the concave portion of the insulating base by glass, resin, brazing material, or the like. And each electrode of the semiconductor element is electrically connected to a metallized wiring layer via a bonding wire, and thereafter, is electrically insulated. A lid is bonded to the body via a sealing material made of glass, resin, brazing material or the like, and the semiconductor element is hermetically contained in a container formed of the insulating base and the lid, thereby forming a semiconductor device as a product. .

However, in this conventional package for housing a semiconductor element, since the thermal conductivity of the aluminum oxide sintered body forming the insulating base is as low as about 20 W / m · K, the semiconductor element housed in the insulating base operates. Sometimes when a large amount of heat is emitted, it is not possible to satisfactorily dissipate the heat into the atmosphere.As a result, the semiconductor element becomes hot due to the heat generated by the semiconductor element, causing thermal damage to the semiconductor element, There is a drawback that the characteristics are changed by heat and a malfunction is caused.

In order to solve the above-mentioned drawback, a through hole is formed in the bottom of the concave portion of the insulating substrate to which the semiconductor element is bonded and fixed, and a heat sink made of a metal material such as copper or a copper-tungsten alloy is provided in the through hole. There has been proposed a semiconductor element storage package which is inserted and attached, and the semiconductor element is bonded and fixed to the upper surface of the heat sink.

[0005]

However, in this semiconductor device housing package, when the heat sink is made of copper, the copper has a thermal expansion coefficient of about 18 × 10 ^-6 / ° C.
^Is significantly different from the coefficient of thermal expansion (approximately 7 × 10 ⁻⁶ / ° C.) of the aluminum oxide sintered body constituting the insulating base, the semiconductor element is hermetically housed inside the container to form a semiconductor device. When heat or the like generated during operation of the semiconductor element is applied to each of the insulating base and the heat sink, a large thermal stress is generated between the heat sink and the insulating base due to a difference in thermal expansion coefficient between the two. Cracks and cracks occur in the insulating base due to the thermal stress, and the hermetic sealing of the container is broken, so that the semiconductor element accommodated in the container cannot be normally and stably operated for a long period of time. Was.

When the heat sink is made of a copper-tungsten alloy, the copper-tungsten alloy is heavy, so that the semiconductor element is hermetically housed in a container, and when the semiconductor device is formed, the weight of the semiconductor device is reduced. Electronic devices that are becoming heavier and smaller and lighter in recent years have had a disadvantage that their mounting becomes difficult.

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to enable a semiconductor device to be housed therein to be always kept at an appropriate temperature, to operate normally and stably, and to be a lightweight package for housing a semiconductor device. Is to provide.

[0008]

SUMMARY OF THE INVENTION The present invention is directed to a heat sink having a frame-shaped base, a mounting portion inserted into a hole of the base, and having a mounting portion on which a semiconductor element is mounted on an upper surface; A semiconductor device housing package, comprising: a frame-shaped wall member attached to the mounting member and surrounding the mounting portion; and a lid joined to an upper surface of the wall member and closing the inside of the wall member. Is formed of an aluminum oxide-based sintered body, an aluminum nitride-based sintered body, a silicon carbide-based sintered body, and a silicon nitride-based sintered body, and the radiator plate is formed by bonding carbon fibers arranged in the thickness direction with carbon. An adhesive layer made of at least one of titanium, zirconium, vanadium or an alloy containing these as a main component, an intermediate layer made of copper, and a main layer made of molybdenum on both upper and lower surfaces of the core body made of the unidirectional composite material. A metal layer having a three-layer structure is applied It consists ones were, adhesive layer, intermediate layer, and is characterized in that each of the thickness of the main layer are substantially the same thickness.

According to the package for housing a semiconductor element of the present invention, the heat conductivity from the upper surface to the lower surface is 300 W /. Since a unidirectional composite material is used that selectively transmits heat in one direction with a thermal conductivity of at least m · K and a lateral thermal conductivity of 30 W / m · K or less, heat generated during operation of the semiconductor element is transmitted to the heat sink. The semiconductor element is selectively absorbed and efficiently radiated into the atmosphere via the heat sink, and as a result, the semiconductor element always has an appropriate temperature, and the semiconductor element can be operated normally and stably for a long period of time.

According to the semiconductor device housing package of the present invention, titanium is provided on both upper and lower surfaces of a core made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded with carbon.
The heatsink provided with a metal layer having a three-layer structure of an adhesive layer made of at least one of zirconium, vanadium or an alloy containing these as a main component, an intermediate layer made of copper, and a main layer made of molybdenum is elastic. Rate is 30 GPa or less, is soft, and has a coefficient of thermal expansion of about 7 × 10 ⁻⁶ / ° C.
Aluminum oxide-based sintered body, aluminum nitride-based sintered body, silicon carbide-based sintered body, forming a substrate at 9 × 10 ⁻⁶ / ° C .;
Since it approximates the coefficient of thermal expansion of silicon nitride based sintered bodies,
Even after the semiconductor element is hermetically housed therein to form a semiconductor device, even when heat generated during operation of the semiconductor element is applied to the base and the radiator, the coefficient of thermal expansion between the base and the radiator is increased. A large thermal stress does not occur due to the difference between the heat sink and the small thermal stress generated is absorbed by the heat sink being appropriately deformed, and as a result, the heat sink and the base are cracked or cracked by the base. And the semiconductor element can be fully and hermetically sealed, and can operate normally and stably for a long period of time.

Further, according to the semiconductor element housing package of the present invention, titanium is provided on both upper and lower surfaces of a core made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded by carbon.
The heat sink is provided with a metal layer having a three-layer structure of an adhesive layer made of at least one of zirconium, vanadium or an alloy containing these as a main component, an intermediate layer made of copper, and a main layer made of molybdenum. Since the weight is about 1/5 of that of the copper-tungsten alloy and is extremely light, when a semiconductor device is housed in a semiconductor device housing package to form a semiconductor device, the weight of the semiconductor device is extremely low. It is lighter, and as a result, it can be mounted on an electronic device that has recently become smaller and lighter.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is a frame-shaped base, 2 is a heat sink, 3 is a wall member, and 4 is a lid. The frame-shaped base 1, the radiator plate 2, the wall member 3, and the lid 4 constitute a container 6 for housing the semiconductor element 5.

The frame-shaped substrate 1 is made of a sintered body of aluminum oxide, a sintered body of aluminum nitride, a sintered body of silicon carbide,
It is made of a silicon nitride-based sintered body, and has a hole in the center thereof into which the heat sink 2 is inserted.

When the frame-shaped substrate 1 is made of, for example, an aluminum oxide sintered body, an appropriate organic binder, a solvent and the like are added to a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide. The slurry is made into a ceramic green sheet (ceramic green sheet) by adopting a doctor blade method or a calendar roll method.
The ceramic green sheet is manufactured and manufactured by performing an appropriate punching process, laminating a plurality of the sheets, and firing at a temperature of about 1600 ° C.

A heat sink 2 is inserted into a hole formed at the center of the base 1, and the heat sink 2 has a mounting portion 2a on which a semiconductor element 5 is mounted. The semiconductor element 5 is bonded and fixed to the mounting portion 2a via an adhesive such as brazing material, glass, resin, or the like.

The heat radiating plate 2 functions as a support member for supporting the semiconductor element 5 and dissipates the heat generated when the semiconductor element 5 is operated into the atmosphere, and combines carbon fibers arranged in the thickness direction with carbon. An adhesive layer 11a made of at least one of titanium, zirconium, vanadium or an alloy containing these as a main component, and an intermediate layer 11 made of copper on both upper and lower surfaces of a core body 11 made of a unidirectional composite material.
and a metal layer 12 having a three-layer structure of a main layer 11c made of molybdenum.

The core 11 made of the unidirectional composite material of the heat sink 2 is made of, for example, a bundle of carbon fibers arrayed in one direction, such as a solid pitch or a phenol resin in which fine powder such as coke is dispersed. Impregnated in a solution of thermosetting resin, and then dried to form a plurality of sheets in which carbon fibers are arranged in one direction, and to make each sheet have the same direction of carbon fibers. A plurality of sheets are laminated, and then a predetermined pressure is applied to the plurality of laminated sheets and heated to cure the thermosetting resin portion,
Finally, it is manufactured by firing at a high temperature in an inert atmosphere to carbonize the phenolic resin and the fine powder of pitch or coke (form carbon) and bond each carbon fiber with the carbon.

Further, as shown in FIG. 2, the metal layers 12 attached to the upper and lower surfaces of the core 11 made of the unidirectional composite material of the heat sink 2 are made of titanium, zirconium, vanadium or these as a main component. It is composed of three layers: an adhesive layer 11a made of at least one kind of alloy, an intermediate layer 11b made of copper, and a main layer 11c made of molybdenum, and the thickness of each layer is substantially the same.

The metal layer 12 is made of an adhesive layer 11a made of at least one of titanium, zirconium, vanadium or an alloy containing these as main components, an intermediate layer 11b made of copper, and a main layer 11c made of molybdenum having substantially the same thickness. thermal expansion coefficient of the base body 1 of the core body 11 made of a unidirectional composite material to form three layers (about 4 × 10 ^-6
/ ° C. to 7 × 10 ⁻⁶ / ° C.), and titanium, zirconium, vanadium or alloys containing these as main components are formed on the upper and lower surfaces of a core 11 made of a unidirectional composite material. Adhesive layer 11 of at least one kind
a, a heat-dissipating plate 2 on which a metal layer 12 composed of three layers, i.e., an intermediate layer 11b made of copper and a main layer 11c made of molybdenum, has a thermal expansion coefficient of about 7 × 10 ^-6 / ° C. × 1
0 ^-6 / ° C., whereby the radiator plate 2 is inserted into the hole of the base 1, and even if heat or the like generated when the semiconductor element 5 is operated is applied to both, the radiator plate 2 and the base 1 No large thermal stress is generated between them due to the difference in thermal expansion coefficient between them, and as a result, the radiator plate 2 is firmly joined to the base 1 without generating cracks or cracks in the base 1, In addition, heat generated during operation of the semiconductor element 5 can be satisfactorily dissipated into the atmosphere, and the semiconductor element 5 housed in the container 6 can be normally and stably operated for a long time.

The metal layer 12 is attached to the upper and lower surfaces of the core 11 made of a unidirectional composite material by, for example, diffusion bonding. Specifically, the core 11 made of a unidirectional composite material is used. A foil of at least one of titanium, zirconium, vanadium or an alloy containing these as a main component, a copper foil, and a molybdenum foil having a thickness of 50 μm or less are sequentially placed on the upper and lower surfaces of the While applying a pressure of 5 MPa with a press, the temperature of 1200 ° C.
This is performed by applying time.

The metal layer 12 includes titanium, zirconium,
The bonding layer 11a made of at least one of vanadium or an alloy containing these as a main component serves to firmly join the metal layer 12 to the core 11 made of the unidirectional composite material, and the intermediate layer 11b made of copper Has a function of firmly joining the adhesive layer 11a and the main layer 11c made of molybdenum and effectively preventing mutual diffusion of the two, and the main layer 11c made of molybdenum is compatible with the adhesive layer 11a and the intermediate layer 11b. The heat expansion coefficient of the heat sink 2 to about 7 × 10
^-6 / ° C. to 9 × 10 ^-6 / ° C.

The heat radiating plate 2 in which the metal layers 12 are adhered to the upper and lower main surfaces of the core 11 made of the unidirectional composite material,
The direction of the carbon fibers of the core 11 made of a unidirectional composite material,
That is, the thermal conductivity in the direction from the upper surface to the lower surface of the heat sink 2 is 300 W / m · K or more, and the thermal conductivity in the direction perpendicular to the carbon fibers is 30 W / m · K or less. Heat is selectively and efficiently transmitted in one direction from the side toward the lower surface. Therefore, when the semiconductor element 5 is placed and fixed on the upper surface of the heat sink 2 using the core body 11 made of the one-way composite material, the heat generated when the semiconductor element 5 operates is transferred from the upper surface to the lower surface of the heat sink 2. The light is transmitted in one direction, and is satisfactorily radiated into the atmosphere via the lower surface of the heat sink 2.

A core 1 made of the unidirectional composite material
The heat sink 2 using the heat sink 1 is about 1/5 of the weight of the copper-tungsten alloy, and is light, so that the semiconductor element 5 is accommodated in the semiconductor element housing package to which the heat sink 2 is attached. When a semiconductor device is formed by the above method, the weight of the semiconductor device becomes extremely light, and it is possible to mount the semiconductor device on an electronic device whose size and weight have been reduced in recent years.

Further, a core body 1 made of the unidirectional composite material
Since the heat radiating plate 2 using the heat sink 1 has an elastic modulus of 30 GPa or less and is soft, even if there is a difference in the thermal expansion coefficient between the heat radiating plate 2 and the base 1, there is a thermal stress generated between the two. Is absorbed by appropriately deforming the heat radiating plate 2, so that the base 1 and the heat radiating plate 2 are bonded very firmly, and the heat generated by the semiconductor element 5 can always be efficiently dissipated into the atmosphere.

Further, a heat radiating plate 2 having a metal layer 12 attached to both upper and lower surfaces of a core 11 made of the unidirectional composite material.
Generates thermal stress due to a difference in thermal expansion coefficient between the core 11 and the upper metal layer 12 and between the core 11 and the lower metal layer 12. The positions of the core 12 and the core 11 are different from each other because they are different from each other. As a result, the heat radiating plate 2 is always flat without being deformed by the thermal stress generated between the core 11 and the metal layer 12. The semiconductor element 5 on the upper surface of the heat sink 2
Can be firmly bonded, and the heat generated when the semiconductor element 5 is operated can be efficiently radiated into the atmosphere via the radiator plate 2.

The radiator plate 2 is inserted into the hole formed in the base 1 by inserting the radiator plate 2 into the hole of the base 1 and brazing the inner wall surface of the hole of the base 1 and the outer peripheral surface of the radiator plate 2 to each other. It is performed by bonding with glass, resin, or the like.

When the heat sink 2 is inserted into the hole of the base 1 with a brazing material interposed therebetween, a sintered body of aluminum oxide, sintered body of aluminum nitride, sintered body of silicon carbide, sintered body of silicon nitride can be used. A metallized metal layer made of a refractory metal powder such as tungsten, molybdenum, or manganese is previously applied to the inner wall of the hole of the base 1 made of Is 1μ
m to 10 μm in thickness, then the metallized metal layer and the nickel plating layer are soldered or silver-copper alloy,
This is performed by brazing through a brazing material such as a silver-copper-titanium alloy.

The base 1 on which the radiator plate 2 is inserted is also provided with a mounting portion 2 on which the semiconductor element 5 of the radiator plate 2 is mounted.
a, a frame-shaped wall member 3 is attached via an adhesive such as brazing material, glass, resin, or the like so as to surround the wall member 3.
A space for accommodating the semiconductor element 5 is formed inside the substrate.

The frame-shaped wall member 3 is made of an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or the like. Aluminum oxide,
An appropriate organic binder, a solvent, and the like are added to and mixed with raw material powders such as silicon oxide, magnesium oxide, and calcium oxide to form a slurry, and the slurry is formed into a ceramic green sheet by employing a doctor blade method or a calendar roll method. (Ceramic green sheet). Thereafter, the ceramic green sheet is subjected to an appropriate punching process, and a plurality of the green sheets are laminated and fired at a temperature of about 1600 ° C.

The frame-shaped wall member 3 has a plurality of metallized wiring layers 7 extending from its inner peripheral portion to its outer peripheral edge.
Each electrode of the semiconductor element 5 is electrically connected to one end of the metallized wiring layer 7 exposed on the inner peripheral portion of the wall member 3 via a bonding wire 8. An external lead terminal 9 connected to an external electric circuit is brazed and attached to a portion leading to the outer peripheral edge via a brazing material such as silver brazing.

The metallized wiring layer 7 functions as a conductive path when connecting each electrode of the semiconductor element 5 to an external electric circuit, and is formed of a high melting point metal powder such as tungsten, molybdenum, and manganese.

The metallized wiring layer 7 is made of tungsten,
A metal paste obtained by adding and mixing an appropriate organic binder, a solvent, and the like to a high melting point metal powder such as molybdenum, manganese, etc., is applied to a ceramic green sheet serving as the wall member 3 in advance in a predetermined pattern by a conventionally known screen printing method. By doing so, the wall member 3 is formed so as to be adhered from the inner peripheral portion to the outer peripheral edge.

On the exposed surface of the metallized wiring layer 7, a metal having excellent corrosion resistance such as nickel and gold and having excellent wettability with a brazing material is applied to a thickness of 1 μm to 20 μm by plating. Thus, the oxidation corrosion of the metallized wiring layer 7 can be effectively prevented, and the brazing of the external lead terminals 9 to the metallized wiring layer 7 can be made firm. Therefore, the metallized wiring layer 7
It is preferable that a metal having excellent corrosion resistance, such as nickel and gold, and having excellent wettability with a brazing material is applied to the exposed surface to a thickness of 1 μm to 20 μm.

Further, external lead terminals 9 are brazed and attached to the metallized wiring layer 7 via a brazing material such as silver brazing, and the external lead terminals 9 are attached to each of the semiconductor elements 5 housed in the container 6. The semiconductor element 5 housed in the container 6 by connecting the external lead terminal 9 to the external electric circuit serves to electrically connect the electrodes to the external electric circuit, and the semiconductor element 5 is connected via the metallized wiring layer 7 and the external lead terminal 9. To be connected to an external electric circuit.

The external lead terminals 9 are made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, an ingot made of a metal such as an iron-nickel-cobalt alloy is formed into a predetermined shape by applying a conventionally known metal working method such as a rolling method or a punching method.

Thus, according to the above-described semiconductor element storage package, the semiconductor element 5 is bonded and fixed onto the semiconductor element mounting portion 2a of the heat sink 2 via an adhesive made of glass, resin, brazing material or the like. Each electrode of the semiconductor element 5 is connected to a predetermined metallized wiring layer 7 via a bonding wire 8.
After that, the lid 4 is joined to the upper surface of the frame-shaped wall member 3 via a sealing material made of glass, resin, brazing material, or the like, so that the base 1, the heat radiation plate 2, and the wall member 3 are connected to each other. A semiconductor device as a product is obtained by hermetically housing the semiconductor element 5 inside the container 6 including the lid 4.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. Although it has been described that the member 3 and the member 3 are separately prepared, both members may be formed of the same material and integrally formed.

[0038]

According to the semiconductor device housing package of the present invention, the heat conductivity from the upper surface to the lower surface is obtained by bonding carbon fibers arranged in the thickness direction to the heat sink to which the semiconductor device is bonded and fixed. Since a unidirectional composite material that selectively transmits heat in one direction with a thermal conductivity of 300 W / m · K or more and a lateral thermal conductivity of 30 W / m · K or less is used, heat generated during operation of the semiconductor element is radiated. The semiconductor element is selectively absorbed by the plate and efficiently radiated into the atmosphere via the heat radiating plate. As a result, the semiconductor element is always at an appropriate temperature, and the semiconductor element can operate normally and stably for a long period of time. .

According to the semiconductor device housing package of the present invention, titanium is provided on both upper and lower surfaces of a core made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded with carbon.
The heatsink provided with a metal layer having a three-layer structure of an adhesive layer made of at least one of zirconium, vanadium or an alloy containing these as a main component, an intermediate layer made of copper, and a main layer made of molybdenum is elastic. Rate is 30 GPa or less, is soft, and has a coefficient of thermal expansion of about 7 × 10 ⁻⁶ / ° C.
Aluminum oxide-based sintered body, aluminum nitride-based sintered body, silicon carbide-based sintered body, forming a substrate at 9 × 10 ⁻⁶ / ° C .;
Since it approximates the coefficient of thermal expansion of silicon nitride based sintered bodies,
Even after the semiconductor element is hermetically housed therein to form a semiconductor device, even when heat generated during operation of the semiconductor element is applied to the base and the radiator, the coefficient of thermal expansion between the base and the radiator is increased. The large heat stress caused by the difference does not occur, and the small heat stress that occurs is absorbed by the heat sink being appropriately deformed, and as a result, the heat sink and the base are cracked or cracked in the base. The semiconductor element can be firmly joined without generation, complete hermetic sealing of the semiconductor element, and the semiconductor element can be operated normally and stably for a long period of time.

Further, according to the package for housing a semiconductor element of the present invention, titanium is provided on both upper and lower surfaces of a core made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded by carbon.
The heat sink is provided with a metal layer having a three-layer structure of an adhesive layer made of at least one of zirconium, vanadium or an alloy containing these as a main component, an intermediate layer made of copper, and a main layer made of molybdenum. Since the weight is about 1/5 of that of the copper-tungsten alloy and is extremely light, when a semiconductor device is housed in a semiconductor device housing package to form a semiconductor device, the weight of the semiconductor device is extremely low. It is lighter, and as a result, it can be mounted on an electronic device that has recently become smaller and lighter.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

FIG. 2 is an enlarged sectional view of a main part of the package shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Base 2 ... Heat sink 2a ... Semiconductor element mounting part 3 ... Wall member 4 ... ··························································································································································································································· Covering layer 11 Core 11a Adhesive layer Intermediate layer 11c Main layer 12 ..Metal layers

Claims (1)

[Claims] 1. A frame-shaped base, inserted into a hole of the base,
A heat sink having a mounting portion on which a semiconductor element is mounted on the upper surface, a frame-shaped wall member attached to the upper surface of the base and surrounding the mounting portion, and a wall joined to the upper surface of the wall member; A semiconductor element housing package comprising a lid for closing the inside of the member, wherein the substrate is an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, or a silicon nitride sintered body. Is formed, and the radiator plate has at least one of titanium, zirconium, vanadium or an alloy containing these as main components on both upper and lower surfaces of a core made of a unidirectional composite material in which carbon fibers arranged in the thickness direction are bonded with carbon. A metal layer having a three-layer structure of one type of an adhesive layer, an intermediate layer made of copper, and a main layer made of molybdenum, and the thickness of each of the adhesive layer, the intermediate layer, and the main layer is reduced. It is noted that the thickness is almost the same Semiconductor device package for housing and.