JP2002222887A - Package for storing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate such a problem associated with the conventional base formed of one-directional carbon fiber that a great quantity of heat generated by a semiconductor device cannot be sufficiently transmitted to the bottom surface side, leading to malfunction and thermal destruction of the semiconductor device due to heat or the flattened periphery of a screwing section of the base when the base is screwed to an external device. SOLUTION: A package comprises the base 1 having on the top surface a mounting section 1a for the semiconductor device 2, a frame body 3 which is so installed as to surround the mounting section 1a and has an installation section 3a for an input/ output terminal 4 which is constituted of a through hole or notch, and the input/output terminal 4 set in the installation section 3a. The base 1 comprises a basic material A formed of a metal carbon composite material consisting of a carbon fiber dispersed in a carbon base material 1b and metal having a coefficient of thermal conductivity of 350 W/m.K or above. A metal layer B consists of an adhesive layer 6 made of steel or stainless steel and a copper layer 7 which are deposited in this order from the base material A side on the top and the bottom surface of the base material A, and a copper plating layer 8 deposited on the metal layer B and the remaining part of the base material A.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device such as an IC or an LSI, and a field effect transistor (FE).
The present invention relates to a semiconductor device housing package for housing a semiconductor device such as T).

[0002]

2. Description of the Related Art FIG. 3 shows an optical semiconductor package which is a kind of a conventional package for housing a semiconductor element (hereinafter referred to as a semiconductor package). (A), (b), (c) of FIG.
1 is a plan view, a sectional view, and a partially enlarged sectional view of an optical semiconductor package, respectively. In the figure, the optical fiber and a cylindrical fixing member for attaching the optical fiber are omitted.

In this optical semiconductor package, a base 102 having a mounting portion 104 on which an optical semiconductor device 105 is mounted via a thermoelectric cooling element C such as a Peltier device is provided on the upper surface, and the mounting portion 104 is surrounded. Frame 10 having a mounting portion formed of a through hole or a cutout on the side and attached at the side.
7 and an input / output terminal 108 fitted to the mounting portion.

Further, in this optical semiconductor package, a unidirectional composite material 109 in which carbon fibers are bonded with carbon.
For example, a chromium (Cr) -iron (Fe) alloy layer as a first layer, a copper (Cu) layer as a second layer, and an iron (Fe) -nickel (Ni) alloy layer or iron as a third layer Heat sink 10 on which metal layer B1 having a three-layer structure of (Fe) -nickel (Ni) -cobalt (Co) alloy layer is adhered
1 is fitted inside a frame-shaped base 102 to form a mounting portion 104 of the optical semiconductor element. And the heat sink 10
An optical semiconductor device is obtained by hermetically sealing the optical semiconductor element 105 inside a container formed of a substrate 1, a frame-shaped base 102, a frame 107 and a lid 103 (Japanese Patent Laid-Open No. 2000-1507).
No. 45).

In the above conventional example, the heat radiating plate 101 forms the mounting portion 104 of the optical semiconductor element 105, and the carbon fibers are arranged in the direction from the upper surface to the lower surface. In addition, the heat sink 101 is provided with the optical semiconductor element 1 if the metal layer B1 is not adhered.
05 has a thermal expansion coefficient of approximately 7 ppm /
° C (× 10 ^-6 / ° C), but the elastic modulus in that direction is about 7 ° C.
Since it is as small as GPa, the thermal expansion coefficient of the radiator plate 101 can be changed by applying the metal layer B1, and the thermal expansion coefficient is adjusted to 10 to 13 ppm / ° C.
The thermal conductivity is 30 W in the direction parallel to the mounting surface of the optical semiconductor element 105, that is, the direction perpendicular to the direction of the carbon fibers in the unidirectional composite material 109 in which carbon fibers are bonded with carbon. / M · K or less, but 300 W / m · K or more in the direction of the carbon fiber.

The heat radiation plate 101 has a coefficient of thermal expansion of 1
0 to 13 ppm / ° C (room temperature to 800 ° C) iron (Fe)-
Nickel (Ni) -cobalt (Co) alloy and iron (Fe)
-The mounting portion 104 of the optical semiconductor element 105 is fitted into a through hole of the frame-shaped base 102 made of a nickel (Ni) alloy or the like with a brazing material such as Ag brazing. This has a function of dissipating the heat generated by the optical semiconductor element 105 to the outside via the thermoelectric cooling element C.

As described above, the radiating plate 101 is made of carbon, compared to a copper (Cu) -tungsten (W) alloy or a copper (Cu) -molybdenum (Mo) alloy, which is generally used as a radiating material. Since the fibers are arranged in a direction from the upper surface side to the lower surface side of the heat radiating plate 101, the heat radiating plate 101 has a large thermal conductivity in this direction. When the optical semiconductor element 105 housed in the optical semiconductor package using the heat radiating plate 101 operates, the heat generated when the heat conductive in the direction orthogonal to the direction of the carbon fiber of the heat radiating plate 101 is 30 W / m · K or less. Therefore, it hardly transmits substantially in the direction parallel to the main surface of the heat sink 101.

Therefore, the heat generated by the operation of the optical semiconductor element 105 is selectively generated in the direction in which the carbon fibers are arranged, that is, the heat radiation plate 1.
01 is transmitted from the upper surface side to the lower surface side and is radiated into the atmosphere from the lower surface side. As a result, the optical semiconductor element 105 always has an appropriate temperature, and the optical semiconductor element 10
5 can be operated normally and stably for a long period of time. In the above conventional example, it is clear that the heat is radiated to the atmosphere and the heat is radiated to the outside via an external device to which the optical semiconductor package is fixedly adhered.

When the heat generated during the operation of the optical semiconductor element 105 is applied to the base 102 and the frame 107, the base 102 and the frame 107 are made of the same material. Since it is 13 ppm / ° C., a large thermal stress does not occur between them. Further, even if a small thermal stress is generated, the heat sink 1
Since the elastic modulus in the direction orthogonal to the direction of the carbon fiber of No. 01 is extremely small, the thermal stress generated between the heat radiating plate 101 and the frame 107 is moderated by appropriately deforming the heat sink 101. Therefore, the frame 107 can be very firmly attached to the base 102.

Therefore, the optical semiconductor package 1 including the base 102, the heat radiating plate 101, the frame 107, and the lid 103 is completely hermetically sealed, and the optical semiconductor element 1 housed therein.
05 can be operated normally and stably for a long period of time.

The heat dissipation structure of the optical semiconductor package can of course be applied to a semiconductor package accommodating an LSI, an FET or the like which generates a large amount of heat.

[0012]

However, when the amount of heat generated by the optical semiconductor element 105 is large and exceeds the limit of heat transfer of the heat radiating plate 101, the heat is stored in the heat radiating plate 101 and the temperature of the heat radiating plate 101 becomes lower. May rise. In this case, the heat of the heat radiating plate 101 is applied to the optical semiconductor element 105 via the thermoelectric cooling element C, and the temperature of the optical semiconductor element 105 rises, causing the optical semiconductor element 105 to malfunction or the optical semiconductor element 105 to be thermally destroyed. The problem had occurred.

Further, in order to fix the optical semiconductor package to an external device by screwing, a highly rigid Fe-N
Frame-shaped substrate 1 made of i-Co alloy, Fe-Ni alloy, or the like
The heat radiating plate 101 is fitted into the through hole of the base 102 via a brazing material such as Ag brazing.
Then, the optical semiconductor package is tightly fixed to a separate external device by screwing it with a screw portion 106, and the heat generated by the optical semiconductor element 105 is radiated to the outside via the external device.

However, the heat radiation plate 101 is connected to the frame-shaped base 10.
When fitting into the second through hole, the size of the gap between the outer peripheral surface of the heat sink 101 and the inner surface of the through hole may vary. In this case, when the heat radiating plate 101 is brazed to the through-hole with a brazing material, the state of accumulation of the brazing material may be uneven, and as a result, the hermetic sealing of the optical semiconductor package may be impaired.

Therefore, an optical semiconductor package using the heat radiating plate 101 itself as a base is conceivable. When screwing to an external device, the unidirectional composite material 109 constituting the heat radiating plate 101 is made of a unidirectional carbon fiber. Are aligned in the thickness direction,
Since this is bonded by carbon, its compressive strength is essentially significantly lower than that of metal. for that reason,
Screw fastening portion 10 of heat sink 101 when tightening with screws
6 was sometimes crushed in the thickness direction. Therefore, there has been a problem that the optical semiconductor package cannot be closely fixed to the external device with a strong fastening force, and the heat generated by the optical semiconductor element 105 may not be sufficiently dissipated (see JP-A-2000-150746).

The present invention has been completed in view of the above problems, and an object of the present invention is to efficiently dissipate heat generated by a semiconductor element to the outside of a semiconductor package through a heat sink and house the heat inside the semiconductor package. An object of the present invention is to provide a semiconductor device that operates normally and stably for a long period of time, and that does not collapse in the thickness direction when tightening a screw for tightly fixing a semiconductor package to an external device.

[0017]

A semiconductor package according to the present invention is provided with a base having a mounting portion on which a semiconductor element is mounted on an upper surface, and a through hole which is attached so as to surround the mounting portion. Alternatively, in a semiconductor device housing package including a frame having an input / output terminal attachment portion formed of a cutout portion and the input / output terminal fitted to the attachment portion, the base is provided in a carbonaceous base material. A metal-carbon composite comprising a dispersed carbon fiber and a metal having a thermal conductivity of 350 W / m · K or more as a base material; A metal layer in which a copper layer is laminated is formed, and a copper plating layer is applied to the metal layer of the base material and the remainder thereof.

According to the semiconductor package of the present invention, the base material constituting the base is made of unidirectional carbon fibers dispersed in a carbonaceous base material in random directions and has a thermal conductivity of 350 W /
a metal-carbon composite composed of a metal of m · K or more, and the heat transmitted from the semiconductor element to the substrate is transmitted to the lower surface and side portions of the substrate while following a random path inside the substrate by the metal-carbon composite Will be. Then, the heat transmitted to the side surface of the base is transmitted to the lower surface via the copper plating layer on the surface, so that the temperature of the semiconductor element can be adjusted to an appropriate temperature by dissipating the heat from the lower surface of the base. As a result, the semiconductor element can always be kept at an appropriate temperature, and the semiconductor element can be normally and stably operated for a long period of time.

Thus, the substrate according to the present invention has a carbon fiber dispersed in a carbonaceous matrix and a thermal conductivity of 350.
Since the base material is a metal-carbon composite composed of a metal of W / m · K or more, the modulus of elasticity is extremely small, and the coefficient of thermal expansion in the direction parallel to the mounting surface of the semiconductor element by the deposited metal layer. Is 10 to 13 ppm / ° C (room temperature to 800 ° C)
Therefore, even if thermal stress is generated between the junction between the base and the semiconductor element and between the base and the frame due to the heat generated by the semiconductor element, these thermal stresses cause the base to be deformed appropriately. It is alleviated by doing.

Further, since the metal lump is dispersed in the carbonaceous base material, the compressive strength of the base is substantially increased, and the pressing force and the compressive stress generated when the base is screwed to the external device are reduced. When applied to the surface, the substrate is less likely to be crushed by a pressing force or a compressive stress. Therefore, for example, when the base is fastened to an external device such as a motherboard with a screw by screwing, the base is crushed in the thickness direction, so that the tightening is loosened and the tight fixing is insufficient, and the heat dissipation to the outside is impaired. Such a problem is solved.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor package of the present invention will be described in detail below. 1 and 2 show an example of an embodiment of a semiconductor package according to the present invention.
2 is a sectional view of a semiconductor package, and FIG. 2 is a partially enlarged sectional view of a base of the semiconductor package.

In FIG. 1, 1 is a base, 1a is a mounting portion of a semiconductor element 2, 2 is a semiconductor element such as an IC, LSI, or FET, 3 is a frame, 3a is an input / output terminal provided on the frame 3. 4
This is the mounting part. A container for accommodating the semiconductor element 2 is mainly constituted by the base 1, the frame 3, and the lid 5, and the input / output terminals 4 are fitted to the mounting portion 3a.

In FIG. 2, 1b is a carbonaceous base material,
1c is a unidirectional aggregate of carbon fibers, 1d is copper, A is a base material obtained by dispersing an aggregate 1c of carbon fibers and copper 1d in a carbonaceous base material 1b, and 6 is upper and lower surfaces of the base material A. 7 is an adhesive layer made of iron or stainless steel, 7 is an adhesive layer 6
A copper layer formed on the upper surface, B is a metal layer formed by laminating the adhesive layer 6 and the copper layer 7, and 8 is a copper plating layer applied to the metal layer B of the base material A and the remaining side surfaces thereof. .

As shown in FIG. 2, the base material A is composed of an aggregate 1c made of unidirectional carbon fibers and copper 1d formed of a carbonaceous base material 1.
b. Such a substrate A is produced, for example, as in the following steps [1] to [7].

[1] A plate-like mass obtained by binding unidirectional carbon fiber bundles with carbon is crushed into small aggregates made of unidirectional carbon fibers, and the crushed aggregates are collected to form a solid pitch. Alternatively, it is immersed in a solution of a thermosetting resin such as a phenol resin in which fine powder such as coke is dispersed. The size of an aggregate obtained by crushing a plate-like mass is about 0.1 to 1 mm on one side when the shape is viewed as, for example, a substantially cubic.

[2] Next, this is dried, and a predetermined pressure is applied and heated to cure the thermosetting resin portion to obtain a plate-shaped mass.

[3] This is fired at a high temperature in an inert atmosphere to carbonize the fine powder of phenol resin and pitch or coke to obtain a carbonaceous base material 1b. The carbonaceous base material 1b itself has a large thermal conductivity of 200 to 300 W / m · K, and also functions as a heat transfer medium for the heat generated by the semiconductor element 2.

[4] The thermal conductivity is 35 in the carbonaceous base material 1b.
A metal of 0 W / m · K or more, in this example, Cu, is melted and impregnated under high temperature and high pressure. The impregnated Cu is dispersed as a copper lump in the carbonaceous base material 1b. The metal to be impregnated has a thermal conductivity exceeding 350 W / m · K,
In addition to u, silver (Ag), aluminum (Al), nickel (Ni), magnesium (Mg) and the like are preferable. Note that A
Since l, Ni, and Mg all have a smaller thermal conductivity than Cu and Ag, Cu and Ag are preferable as the metal to be impregnated.

[5] Next, a lump in which carbon fibers and a metal such as Cu are dispersed in the carbonaceous preform 1b is cut into a plate shape to prepare a plate to be the base material A. The dimensions of the plate are, for example, about 0.5 to 2 mm in thickness and about 100 mm in vertical and horizontal dimensions.

[6] Further, this plate is processed into a desired shape to produce a substrate A, and an adhesive layer 6 made of iron or stainless steel and a copper layer are formed on the upper and lower surfaces of the substrate A from the substrate A side. 7
Are formed to form a metal layer B.

[7] Next, a copper plating layer 8 is applied to the entire surface of the substrate A.

The thermal expansion coefficient of the base material A varies depending on the nature and amount of the metal to be impregnated. For example, when copper is dispersed, it becomes 8 to 10 ppm / ° C. The collapse of the material A at the time of screwing is greatly reduced. Therefore, when the semiconductor package is tightly fixed to the external device by screwing it to the external device, the semiconductor package can be firmly tightened.

As shown in FIG. 2, the substrate 1 has an adhesive layer 6 made of iron or stainless steel on the upper and lower surfaces of the substrate A.
And a metal layer B having a two-layer structure formed by laminating a copper layer 7. The copper layer 7 also serves as a heat transfer medium that transfers the heat generated by the semiconductor element 2 in the lateral direction. Then, the base 1 is attached to the lower surface of the frame 3 by brazing the metal layer B on the upper surface of the base 1 to the lower surface of the base 3 via a brazing material such as solder or silver brazing.

The adhesive layer 6 and the copper layer 7 are
Since the metal layer B consisting of
Is porous with pores on the surface, but the pores are completely closed by the metal layer B. As a result, the reliability of hermetic sealing inside the semiconductor package is high. When the semiconductor device 2 is housed in a container to form a semiconductor device, and then the semiconductor device is hermetically sealed using helium, it is effective that part of helium is trapped in the pores of the base material A. And the inspection of the hermetic sealing of the semiconductor device can be performed accurately.

In the present invention, the reason why the adhesive layer 6 is formed on the substrate A in advance is to adhere the copper layer 7 that is difficult to bond with carbon to the substrate A via the adhesive layer 6. The atoms and carbon atoms interdiffuse at a high temperature to obtain a large bonding strength. Copper 1d partially appearing on the surface of the substrate A
, A physical bonding strength can be obtained by the anchor effect.

When the substrate 1 is covered with the copper plating layer 8, the copper plating layer 8 on the side surface serves as a heat transfer medium for guiding the heat transmitted to the side surface to the lower surface, and the mounting portion 3 a of the frame body 3. Also, when the input / output terminal 4 is fitted into and joined with a brazing material, the wettability of the brazing material is improved. If the thickness of the copper plating layer 8 is less than 0.5 μm, the wettability of the brazing material tends to decrease, and the copper plating layer 8 does not function effectively as a heat transfer medium. If the thickness of the copper plating layer 8 exceeds 5 μm, a large stress will be generated between the carbonaceous base material 1b and the copper plating layer 8 when the copper plating layer 8 is formed, and the copper plating layer 8 will be present inside. It is preferable that the thickness of the copper plating layer 8 be in the range of 0.5 to 5 μm, since the copper plating layer 8 is easily peeled off due to the inherent stress.

In the present invention, the metal layer B is formed of the two layers of the adhesive layer 6 and the copper layer 7 by forming the copper layer 7 with the adhesive layer 6 interposed therebetween. Frame 3 made of Fe-Ni-Co alloy or Fe-Ni alloy with an expansion coefficient of
Coefficient of thermal expansion of 10 to 13 ppm / ° C (room temperature to 800 ° C)
In order to approach.

The thickness of the adhesive layer 6 is 5 to 30 μm,
The thickness of the copper layer 7 is preferably 5 to 30 μm. If the thickness of the adhesive layer 6 is less than 5 μm, the function as the adhesive layer when forming the copper layer 7 will not be achieved. The adhesive layer 6
If the thickness of the adhesive layer 6 is 30 μm or more, the adhesive layer 6 may be separated from the surface of the base material A due to thermal stress generated by a difference in thermal expansion coefficient between the adhesive layer 6 and the base material A. Adhesion deteriorates.

When the thickness of the copper layer 7 is less than 5 μm, the coefficient of thermal expansion of the substrate 1 decreases, and
When the frame 3 made of a Ni-Co alloy or an Fe-Ni alloy is joined with a brazing material, cracks are easily generated in the brazing material due to a difference in the coefficient of thermal expansion between them. When the thickness of the copper layer 7 is 30 μm or more, the thermal expansion coefficient of the base material A becomes too large, and cracks are easily generated in the brazing material when the frame 3 is joined to the upper surface of the base 1 with the brazing material. .

From the above, the base 1 having the metal layer B formed by laminating the adhesive layer 6 made of iron or stainless steel and the copper layer 7 having the thickness within the above range on the upper and lower surfaces of the base A. Indicates that iron has a thermal expansion coefficient of about 14 ppm / ° C. (room temperature to 800 ° C.) and stainless steel has a thermal expansion coefficient of 11
-15 ppm / ° C (room temperature-800 ° C), the coefficient of thermal expansion of copper is about 19 ppm / ° C (room temperature-800 ° C),
Has a thermal expansion coefficient of 8 to 10 ppm / ° C (room temperature to 800 ° C)
Therefore, the coefficient of thermal expansion of the substrate 1 is 10 to 13 pp
m / ° C. (room temperature to 800 ° C.).

Thus, after the base 1 is attached to the lower surface of the frame 3, even if heat generated during operation of the semiconductor element 2 is applied to the base 1 and the frame 3, the base 1 and the frame 3 The thermal stress due to the difference between the two thermal expansion coefficients hardly occurs between them. Even when thermal stress is generated, the base 1 absorbs the thermal stress because the elastic modulus of the base 1 is small. As a result, the base 1 is firmly joined to the frame 3 and the semiconductor element 2 The heat generated during operation can be well diffused into the atmosphere. Further, the semiconductor element 2 and the base 1
Is deformed so that the substrate 1 absorbs the thermal stress, and no large thermal stress is generated between the semiconductor element 2 and the substrate 1. Therefore, the semiconductor element 2 housed in the container can be normally and stably operated for a long time.

The metal layer B is applied by diffusion bonding to the upper and lower surfaces of the substrate A. Specifically, the metal layer B is, for example, an iron foil or stainless steel having a thickness of about 5 μm on the upper and lower surfaces of the substrate A. A steel foil and a copper foil having a thickness of, for example, about 20 μm are sequentially placed and then applied by applying a temperature of 1200 ° C. for 1 hour while applying a pressure of 5 MPa (megapascal) by a vacuum hot press. .

The substrate 1 on which the metal layer B is formed on the upper and lower surfaces of the substrate A and the copper plating layer 8 is further applied has a thermal conductivity of 350 to 400 W / m · K from the upper surface to the lower surface. In the direction parallel to the mounting surface of the mounting portion 1a of the semiconductor element 2, a thermal conductivity of 200 to 250 W / m · K is obtained. As a result, the base 1 can efficiently transmit the heat generated by the semiconductor element 2 mounted thereon in a random direction. Therefore, the heat is dissipated from the entire lower surface of the base 1, and the heat transmitted to the side surfaces of the base 1 is also efficiently transmitted to the outside from the entire lower surface of the base 1 through the copper plating layer 8.

When the thermal conductivity in the direction parallel to the mounting surface (joining surface) of the semiconductor element 2 is measured, it is 200 to 250 W / m ·
K, which is 7 to 8 compared to the one using the unidirectional composite material 109 in which carbon fibers are bonded with carbon as shown in FIG.
It became clear that it was twice as large. That is, the heat generated by the semiconductor element 2 is transmitted to the base 1 via a thermoelectric cooling element (not shown in FIG. 1), and then in various directions in the base 1 from the upper surface side to the lower surface side of the base 1. The heat is efficiently transmitted by the heat transfer path, and is further radiated into the air via an external device.

When the carbonaceous base material 1b is impregnated with copper 1d, the density of the base material A becomes ^{3 to 4} g / cm ³ ,
Is larger than the density (about 2 g / cm ³ ) of the substrate A which is not impregnated with
It is about 1/3 to 1/5 of the u-W alloy, and is extremely light. Therefore, it is advantageous when mounted on an electronic device that is recently becoming smaller and lighter.

Further, the substrate 1 using the carbonaceous base material 1b is
Since its elastic modulus is smaller than that of a metal such as an Fe—Ni—Co alloy, even if there is a difference in the coefficient of thermal expansion between the base 1 and the frame 3, the thermal stress generated between the base 1 and the frame 3. Is absorbed by the substrate 1 being appropriately deformed. As a result, the base 1 and the frame 3 and the base 1 and the semiconductor element 2 are firmly joined, and the heat generated by the semiconductor element 2 can always be efficiently dissipated into the atmosphere. Can be operated normally and stably.

The metal layer B is formed on the upper and lower surfaces of the carbonaceous base material 1b.
A substrate A and a metal layer B on the upper surface
And between the substrate A and the metal layer B on the lower surface thereof,
Even if a thermal stress due to a difference in thermal expansion coefficient between the base material A and the metal layer B occurs, the respective thermal stresses are in the same direction on the upper and lower surfaces, and are substantially equal. It is not deformed by the thermal stress generated between the base material A and the metal layer B, and is always flat. Thereby, the base 1 can be firmly joined to the lower surface of the frame 3, and the heat generated during operation of the semiconductor element 2 can be efficiently radiated into the atmosphere via the base 1.

The frame 3 of the present invention is attached to the outer periphery of the upper surface of the base 1 so as to surround the mounting portion 1a via an adhesive such as brazing material, glass or resin. A space for accommodating the semiconductor element 2 is formed inside the frame body 3.

The frame 3 is made of Fe—Ni—Co alloy or Fe—N
It is made of, for example, an i-alloy, and is manufactured by molding into an ingot (lump) of a Fe—Ni—Co alloy into a predetermined frame shape by a conventionally known metal working method such as a press forming method.

The frame 3 made of an Fe—Ni—Co alloy or an Fe—Ni alloy has a thermal expansion coefficient of 10 to 13 pp.
m / ° C. (room temperature to 800 ° C.), which is almost the same as the coefficient of thermal expansion of the substrate 1 of 10 to 13 ppm / ° C. Therefore,
The thermal stress generated between the base 1 and the frame 3 is small, and the elastic modulus of the base 1 is smaller than that of a metal such as an Fe—Ni—Co alloy. Is absorbed by moderate deformation of the substrate 1. Therefore,
Problems such as cracks in the brazing material joining the frame 3 and the base 1 and occurrence of warpage in the base 1 can be solved.

The frame 3 has a mounting portion 3a formed of a through hole or a cutout on a side portion thereof.
Is fitted with an input / output terminal 4 on which a plurality of metallized wiring layers 9 extending from the inside to the outside of the frame 3 are formed. The input / output terminal 4 is formed by connecting the metallized wiring layer 9 to the frame 3.
To the inside of the frame body 3 with electrical insulation from the inside to the outside, and aluminum oxide (Al ₂ O ₃ )
It is made of an electrically insulating material such as a porous sintered body. Then, a metallized layer is previously applied to the side surface of the input / output terminal 4 facing the inner surface of the mounting portion 3a.
The input / output terminal 4 is fitted to the mounting portion 3a by joining to the inner surface of a through a brazing material such as silver brazing.

The main body of the input / output terminal 4 made of an electrically insulating material is manufactured as follows. First, an appropriate binder, a solvent, and the like are added to, for example, a raw material powder such as Al ₂ O ₃ , silicon oxide (SiO ₂ ), magnesium oxide (MgO), and calcium oxide (CaO) to form a slurry. The slurry is formed into a ceramic green sheet by employing a doctor blade method or a calender roll method. Then, the ceramic green sheet is subjected to an appropriate punching process and a metal layer serving as a metallized wiring layer 9 is formed. By laminating a plurality of the ceramic green sheets and firing at a temperature of about 1600 ° C., the main body of the input / output terminal 4 is manufactured.

Further, the input / output terminal 4 is formed such that a plurality of metallized wiring layers 9 extending from the inside to the outside of the frame 3 are buried in the main body portion which is a ceramic laminate. Each electrode of the semiconductor element 2 is electrically connected to a portion of the metallized wiring layer 9 located inside the frame 3 via a bonding wire 10. An external lead terminal 11 connected to an external device is attached to a portion of the metallized wiring layer 9 located outside the frame 3 via a brazing material such as silver brazing.

The metallized wiring layer 9 functions as a conductive path for connecting each electrode of the semiconductor element 2 to an external device, and includes tungsten (W), molybdenum (Mo), manganese (M
n) and the like and high melting point metal powder. The metallized wiring layer 9 is formed by adding a paste obtained by adding a suitable organic binder, a solvent, and the like to a high melting point metal powder such as W, Mo, and Mn to a ceramic green sheet serving as the input / output terminal 4 in advance. Is formed on the input / output terminal 4 by printing and applying a predetermined pattern by the screen printing method described above and baking it.

The metallized wiring layer 9 is coated on its exposed surface with a metal having excellent corrosion resistance such as Ni or gold (Au) and excellent wettability with a brazing material in a thickness of 1 to 20 μm by plating. If the metallized wiring layer 9 is attached, oxidation corrosion of the metallized wiring layer 9 can be effectively prevented. Further, the brazing of the external lead terminals 11 to the metallized wiring layer 9 can be strengthened. Therefore, the metallized wiring layer 9
Preferably, a metal having excellent corrosion resistance, such as Ni or Au, is applied to the exposed surface to a thickness of 1 to 20 μm.

External lead terminals 11 are brazed to the metallized wiring layer 9 via a brazing material such as silver brazing, and the external lead terminals 11 connect the respective electrodes of the semiconductor element 2 housed inside the container. It functions to electrically connect to an external device. By connecting the external lead terminal 11 to an external device, the semiconductor element 2 accommodated in the container is electrically connected to the external device via the metallized wiring layer 9 and the external lead terminal 11.

The external lead terminals 11 are made of Fe—Ni—Co
Alloy or a metal material such as an Fe-Ni alloy, and is formed into a predetermined shape by subjecting an ingot of the Fe-Ni-Co alloy to a conventionally known metal processing method such as a rolling method or a punching method. It is formed.

Thus, according to the semiconductor package of the present invention, the semiconductor element 2 is made of glass,
The electrodes of the semiconductor element 2 are connected to predetermined metallized wiring layers 9 via bonding wires 10 while being bonded and fixed via an adhesive such as a resin or a brazing material. 5 is bonded via a sealing material made of glass, resin, brazing material, or the like, and the semiconductor element 2 is hermetically housed in a container including the base 1, the frame 3, and the lid 5 to thereby provide a semiconductor as a product. Device.

The present invention is not limited to the above embodiment, and various changes can be made without departing from the gist of the present invention.

[0060]

According to the present invention, a base having a mounting portion on which a semiconductor element is mounted on a top surface is made of a carbon fiber dispersed in a carbonaceous matrix and a metal having a thermal conductivity of 350 W / m · K or more. A metal layer is formed by laminating an adhesive layer made of iron or stainless steel and a copper layer on the upper and lower surfaces of the substrate from the substrate side on the upper and lower surfaces of the substrate, and the metal layer of the substrate and the rest thereof Since the copper plating layer is applied to the substrate, heat generated during operation of the semiconductor element is transmitted from the upper surface of the substrate to the lower surface in a random path, and the heat transmitted to the side surface of the substrate is transferred to the copper plating layer. By transmitting the heat to the lower surface side, a large amount of heat can be efficiently transmitted to the lower surface side of the base. As a result, the temperature of the semiconductor element is always kept at an appropriate temperature, and the semiconductor element can operate normally and stably for a long period of time.

A unidirectional aggregate of carbon fibers and a metal are dispersed in a carbonaceous matrix to form a base material, and a metal layer having a two-layer structure of an adhesive layer and a copper layer is diffused on the upper and lower surfaces thereof. By forming the base by bonding and then further applying a copper plating layer, the elastic modulus of the base can be reduced. As a result, there is a difference between the coefficient of thermal expansion of the base and the coefficient of thermal expansion of a frame made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and heat is applied to the base and the frame. Even if thermal stress occurs between the base and the frame, the base can be appropriately deformed and absorb the thermal stress.

Further, the substrate has a thermal conductivity of 350 W / m ·
Since the metal of K or more is dispersed in the carbonaceous base material, the metal imparts compressive strength capable of maintaining the shape of the base material against external stress. For example, when a pressing force or a compressive stress is applied to the surface of the base when the screwed portion at the end of the base is screwed to an external device or the like, the base is unlikely to be crushed by the pressing force or the compressive stress. Therefore, when screwing to an external device such as a motherboard, there is an effect that a problem that the base is crushed in the thickness direction is eliminated.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor package of the present invention.

FIG. 2 is a partially enlarged sectional view of a base of the semiconductor package of FIG. 1;

FIG. 3A is a plan view of a conventional semiconductor package,
(B) is a cross-sectional view of a conventional semiconductor package, and (c) is a partially enlarged cross-sectional view of a heat sink of the conventional semiconductor package.

[Explanation of symbols]

 1: Base 1a: Mounting portion 1b: Carbonaceous matrix 1c: Unidirectional aggregate of carbon fibers 1d: Copper 2: Semiconductor element 3: Frame 3a: Attachment portion 6: Adhesive layer 7: Copper layer 8: Copper plating layer 12: Screwed part A: Base material B: Metal layer

Claims (1)

[Claims] An input / output terminal mounting portion attached to a base having a mounting portion on which a semiconductor element is mounted on an upper surface and surrounding the mounting portion and comprising a through hole or a cutout. In the semiconductor device housing package provided with a frame body having the following, and the input / output terminal fitted to the mounting portion, the base is made of carbon fibers dispersed in a carbonaceous matrix and having a thermal conductivity of 350 W. / M · K or more metal as a base material, a metal layer formed by laminating an adhesive layer and a copper layer made of iron or stainless steel from the base material side on the upper and lower surfaces of the base material, A package for accommodating a semiconductor element, wherein a copper plating layer is applied to the metal layer of the base material and the remainder thereof.