JP2002353356A - Package for storing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To overcome such a problem that a large amount of heat generated by a semiconductor device is not sufficiently conducted to a main lower surface of the substrate so that the semiconductor device fails to work properly or is thermally broken, and an area surrounding a screwing unit of the substrate collapses when the substrate is screwed to an exterior device. SOLUTION: The substrate having a carrying unit 1a for carrying a semiconductor device 2 on a top face thereof comprises a substrate member A which is a complex of metal and carbon in which carbon fibers are dispersed in a carbonaceous substrate member 1b which is impregnated with a metal component 1d containing at least one kind of Ag, Ti, Cr, Zr, and W by 0.2 to 10 weight parts, and 90 to 99.8 weight parts of Cu; metal layers B which are formed by sequentially laminating a bonding layer 6 and a copper layer 7 on an upper and a lower surface of the substrate A from the substrate A side; and a plated layer of copper 8 which coats a side of the substrate A and a surface of the metal layer B.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device such as an IC or an LSI, and a field effect transistor (FE).
The present invention relates to a semiconductor device housing package for housing a semiconductor device such as T).

[0002]

2. Description of the Related Art FIG. 3 shows an optical semiconductor package which is a kind of a conventional package for housing a semiconductor element (hereinafter referred to as a semiconductor package). (A), (b), (c) of FIG.
1 is a plan view, a sectional view, and a partially enlarged sectional view of an optical semiconductor package, respectively. In the figure, an optical fiber and a cylindrical fixing member for attaching the optical fiber are provided on the side of the optical semiconductor package, but these are omitted.

The optical semiconductor package includes a base 102 having a mounting portion 104 on which a semiconductor element 105 is mounted via a thermoelectric cooling element C such as a Peltier device, and a screwing portion 106 on the upper main surface, and a mounting portion. It has a frame 107 attached so as to surround the 104 and having a mounting portion formed of a through hole or a cutout on a side portion, and an input / output terminal 108 fitted to the mounting portion. .

In this optical semiconductor package, for example, chromium (Cr) -iron (Fe) as a first layer is formed on the upper and lower surfaces of the unidirectional composite material 109 in which carbon fibers are bonded with carbon.
Alloy layer, copper (Cu) layer as second layer, Fe as third layer
A heat radiating plate 101 on which a metal layer B1 having a three-layer structure of a nickel (Ni) -cobalt (Co) alloy layer or an Fe-Ni alloy layer is attached is fitted inside a frame-shaped base 102 to emit light. The mounting part 104 of the semiconductor element 105 is formed.
Then, the heat radiating plate 101, the frame-shaped base 102, and the frame 107
An optical semiconductor element 105 is provided inside a container comprising
Is airtightly sealed to form an optical semiconductor device (see JP-A-2000-150745).

In the above conventional example, the radiating plate 101 forms the mounting portion 104 of the optical semiconductor element 105, and the carbon fibers are arranged in the direction from the upper surface to the lower surface. Further, the heat radiating plate 101 is provided on the optical semiconductor element 1 if the metal layer B1 is not adhered.
Thermal expansion coefficient in the direction parallel to the mounting surface of 05 is almost 7 ppm
/ ° C. (× 10 ⁻⁶ / ° C.), but the elastic modulus in that direction is as small as about 7 GPa (gigapascal).
1 can increase the coefficient of thermal expansion of the radiator plate 101, so that the coefficient of thermal expansion is 10 to 13 ppm.
/ ° C. The thermal conductivity is 30 W / in the direction parallel to the mounting surface of the optical semiconductor element 105, that is, the direction perpendicular to the direction of the carbon fibers in the unidirectional composite material 109 in which carbon fibers are bonded with carbon. m · K or less, but 300 W / m · K or more in the direction of the carbon fiber.

The heat radiation plate 101 has a coefficient of thermal expansion of 1
0 to 13 ppm / ° C (room temperature to 800 ° C) Fe-Ni-
Frame-shaped substrate 102 made of a Co alloy, an Fe-Ni alloy, or the like
Is inserted into the through hole with a brazing material such as Ag brazing to form the mounting portion 104 of the optical semiconductor element. Accordingly, the optical semiconductor package has a function of dissipating the heat generated by the optical semiconductor element 105 to the outside via the thermoelectric cooling element C.

[0007] As described above, the heat radiating plate 101 is made of a material such as Cu-tungsten (W) alloy or Cu-molybdenum (Mo) alloy which is generally used as a heat radiating material.
Since the carbon fibers are arranged in the direction from the upper surface side to the lower surface side of the heat dissipation plate 101, the heat radiation plate 101 has a large thermal conductivity in this direction. When the optical semiconductor element 105 housed in the optical semiconductor package using the heat radiating plate 101 operates, the heat generated when the heat conductive in the direction orthogonal to the direction of the carbon fiber of the heat radiating plate 101 is 30 W / m · K or less. Because of that,
The light is hardly transmitted in the direction of the main surface (surface direction) of the heat sink 101.

Therefore, the heat generated by the operation of the optical semiconductor element 105 is selectively generated in the direction in which the carbon fibers are arranged, that is, the heat radiation plate 1.
01 is transmitted from the upper surface side to the lower surface side and is radiated into the atmosphere from the lower surface side. As a result, the optical semiconductor element 105 always has an appropriate temperature, and the optical semiconductor element 105 can operate normally and stably for a long period of time.

When heat generated during operation of the optical semiconductor element 105 is applied to the base 102 and the frame 107, the base 1
02 and the frame 107 are made of the same material, and thus have a coefficient of thermal expansion of about 10 to 13 ppm / ° C.
No large thermal stress occurs between the two. Even if a small thermal stress is generated, the thermal stress generated between the heat sink 101 and the frame 107 is moderated by the heat sink 101 being appropriately deformed. Therefore, the frame 107 can be very firmly attached to the base 102.

Therefore, the optical semiconductor package 1 including the base 102, the heat radiating plate 101, the frame 107, and the lid 103 is completely hermetically sealed, and the optical semiconductor element 1 housed therein.
05 can be operated normally and stably for a long period of time.

The heat dissipation structure of the optical semiconductor package can be applied to a semiconductor package that accommodates an LSI, an FET, and the like that generate a large amount of heat.

[0012]

However, in recent years,
When the amount of heat generated by the optical semiconductor element 105 is increasing and exceeding the limit of heat transfer of the heat sink 101, the heat is stored in the heat sink 101 and the temperature of the heat sink 101 may increase. In this case, the heat of the radiator plate 101 is applied to the optical semiconductor element 105 via the thermoelectric cooling element C, and the temperature of the optical semiconductor element 105 rises, causing the optical semiconductor element 105 to malfunction or the optical semiconductor element 105 to be thermally destroyed. Problem had occurred.

Further, in order to fix the optical semiconductor package to an external device by screwing, a highly rigid Fe-N
Frame-shaped substrate 1 made of i-Co alloy, Fe-Ni alloy, or the like
The heat radiating plate 101 is fitted into the through hole of the base 102 via a brazing material such as Ag brazing.
Then, the optical semiconductor package is tightly fixed to a separate external device by screwing it with a screw portion 106, and the heat generated by the optical semiconductor element 105 is radiated to the outside via the external device.

However, the heat radiation plate 101 is connected to the frame-shaped base 10.
In the case of insertion into the second through hole, the size of the gap between the outer peripheral surface of the heat radiating plate 101 and the inner surface of the through hole may vary. In this case, if the heat radiating plate 101 is brazed to the through holes with a brazing material, the state of accumulation of the brazing material becomes uneven, and as a result, the hermetic sealing of the optical semiconductor package may be impaired.

Therefore, it is conceivable that the heat sink 101 itself is used as a base. However, when the optical semiconductor package is screwed to an external device, the one-way composite material 109 constituting the heat sink 101 is made of one-way carbon fiber. Are aligned in the thickness direction and are bonded with carbon, so that the compressive strength in the thickness direction is essentially significantly lower than that of metal.
For this reason, the screw fixing portion 106 of the heat sink 101 as a base may be crushed in the thickness direction when tightening with the screw. Therefore, there has been a problem that the optical semiconductor package cannot be fixed to the external device with a strong tightening force, and the heat generated by the optical semiconductor element 105 cannot be sufficiently dissipated (see JP-A-2000-150746).

Accordingly, the present invention has been completed in view of the above-mentioned problems, and an object of the present invention is to efficiently dissipate heat generated by a semiconductor device to the outside to accommodate a semiconductor device housed in a semiconductor package for a long period of time. It is an object of the present invention to provide a semiconductor device that operates normally and stably throughout, and does not collapse in the thickness direction at the time of screwing for tightly fixing a semiconductor package to an external device.

[0017]

SUMMARY OF THE INVENTION A semiconductor package according to the present invention has a base having a mounting portion on which a semiconductor element is mounted on an upper main surface and having screw portions at both ends, and an upper main surface of the base. A frame body having a mounting portion for an input / output terminal comprising a through hole or a cutout portion attached to the mounting portion so as to surround the mounting portion, and the input / output terminal fitted to the mounting portion. Semiconductor device storage package
The substrate is contained in a carbonaceous base material impregnated with a metal component containing 0.2 to 10 parts by weight of at least one of silver, titanium, chromium, zirconium and tungsten and 90 to 99.8 parts by weight of copper. A metal layer is formed by sequentially laminating an adhesive layer made of iron or stainless steel and a copper layer from the base material side on the upper and lower surfaces of the base material, the base material being a carbon-carbon composite in which carbon fibers are dispersed, A copper plating layer is applied to a side surface of the base material and a surface of the metal layer.

According to the semiconductor package of the present invention, the base material constituting the base of the semiconductor package is impregnated with an aggregate of unidirectional carbon fibers dispersed and arranged in random directions in the carbonaceous base material. The heat transmitted from the semiconductor element to the base material is transmitted to the lower main surface and side surfaces of the base material while following a random path inside the base material. Then, the heat transmitted to the side surface of the base is transmitted to the lower main surface via the Cu plating layer on the surface, and thus the temperature of the semiconductor element is adjusted to an appropriate temperature by dissipating the heat from the lower main surface of the base. Becomes possible. At this time, the metal components impregnated in the substrate are Ag, Ti, Cr, Zr, W
From 0.2 to 10 parts by weight of Cu and 90 to 99.8 parts by weight of Cu, the adhesion between Cu and the surrounding carbonaceous base material is improved, and only Cu is impregnated. The heat conductivity is greatly improved as compared with the case where As a result, the semiconductor element can always be kept at an appropriate temperature, and the semiconductor element can be normally and stably operated for a long period of time.

The substrate of the present invention is impregnated with a metal component containing 0.2 to 10 parts by weight of at least one of silver, titanium, chromium, zirconium and tungsten and 90 to 99.8 parts by weight of copper. Since the base material is a metal-carbon composite in which carbon fibers are dispersed in a carbonaceous matrix, the modulus of elasticity is extremely small, and the metal layer adheres in a direction parallel to the mounting surface of the semiconductor element. Thermal expansion coefficient is 1
It is adjusted to 0 to 13 ppm / ° C (room temperature to 800 ° C).
For this reason, even if heat generated by the semiconductor element generates thermal stress between the joint between the base and the semiconductor element and between the base and the frame, the thermal stress becomes small, and the thermal stress becomes small. Is alleviated by moderate deformation of the substrate.

Further, since the base material is made of copper, which is a metal as a main component, impregnated in the carbonaceous base material, the compressive strength of the base material is substantially increased, and is generated when the base material is screwed to an external device. When a pressing force or a compressive stress is applied to the surface of the substrate, the substrate is less likely to collapse against the pressing force or the compressive stress. Therefore, for example, when the base is fastened to an external device such as a motherboard with a screw by screwing, the base is crushed in the thickness direction, so that the tightening is loosened and the tight fixing is insufficient, and the heat dissipation to the outside is impaired. Such a problem is solved.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor package of the present invention will be described in detail below. 1 and 2 show an example of an embodiment of a semiconductor package A of the present invention. FIG. 1 is a sectional view of the semiconductor package A, and FIG. 2 is a partially enlarged sectional view of a base of the semiconductor package A of the present invention. It is.

In FIG. 1, 1 is a base, 1a is a mounting portion of a semiconductor element 2, 2 is a semiconductor element such as an IC, LSI, or FET, 3 is a frame, 3a is an input / output terminal provided on the frame 3. This is the mounting part. A container for accommodating the semiconductor element 2 is basically constituted by the base 1, the frame 3 and the lid 5, and the input / output terminals 4 are fitted to the mounting portion 3a.

In FIG. 2, 1b is a carbonaceous base material,
1c is an aggregate of unidirectional carbon fibers, 1d is copper, and A is
Carbon fibers are contained in a carbonaceous preform 1b impregnated with a metal component containing 0.2 to 10 parts by weight of at least one of Ag, Ti, Cr, Zr, and W and 90 to 99.8 parts by weight of Cu. It is a substrate made of a dispersed metal-carbon composite. Reference numeral 6 denotes an adhesive layer made of iron or stainless steel formed on the upper and lower surfaces of the base material A, and reference numeral 7 denotes a Cu layer formed on the adhesive layer 6.
The layer B is a metal layer formed by laminating the adhesive layer 6 and the Cu layer 7, the numeral 8 is a Cu plating layer adhered to the side surface of the base material A and the surface of the metal layer B, and the numeral 12 is a screwing portion.

As shown in FIG. 2, the base material A is made of a metal-carbon composite in which carbon fibers are dispersed in a carbonaceous base material 1b impregnated with a metal component. 1] to [7].

[1] A plate-like mass obtained by binding unidirectional carbon fiber bundles with carbon is crushed into small aggregates made of unidirectional carbon fibers, and the crushed aggregates are collected to form a solid pitch. Alternatively, it is immersed in a solution of a thermosetting resin such as a phenol resin in which fine powder such as coke is dispersed. The size of the aggregate obtained by crushing the plate-like mass is about 0.1 to 1 mm on one side when the shape is viewed as, for example, a substantially cubic.

[2] Next, this is dried, and a predetermined pressure is applied and heated to cure the thermosetting resin portion to obtain a plate-shaped mass.

[3] This is fired at a high temperature in an inert atmosphere to carbonize the fine powder of phenol resin and pitch or coke to obtain a carbonaceous base material 1b. The carbonaceous base material 1b itself has a large thermal conductivity of 200 to 300 W / m · K, and also functions as a heat transfer path for heat generated by the semiconductor element 2.

[4] A method of impregnating Cu in the carbonaceous base material 1b at a high temperature and a high pressure in an inert atmosphere, that is, by impregnating with a molten metal forging method. At this time, the impregnated Cu
Are dispersed in the carbonaceous base material 1b as Cu lump. Ag, Ti, Cr, Zr and W
Is contained in an amount of 0.2 to 10 parts by weight. Among these metals, those excluding Ag have a melting point higher than the melting point of Cu (about 1083 ° C.),
When mixed with the molten Cu, a solid solution is formed with the Cu, which becomes an apparent liquid during the impregnation and is impregnated into the carbonaceous base material 1b.

[5] Next, a lump in which carbon fibers and a metal component 1d such as Cu are dispersed in the carbonaceous preform 1b is cut out into a plate shape to produce a plate to be the base material A. The dimensions of the plate are, for example, about 0.5 to 2 mm in thickness, and 100 mm in vertical and horizontal dimensions.
It is about × 100 mm.

[6] Further, this plate is processed into a desired shape to produce a base material A, and an adhesive layer 6 made of iron or stainless steel and a Cu layer are formed on the upper and lower surfaces of the base material A from the base material A side. 7 is formed.

[7] Next, a Cu plating layer 8 is applied to the entire surface of the substrate A.

The base material A has a metal component 1d such as Cu dispersed therein, and the metal contained therein provides good adhesion between Cu and the carbonaceous base material. The thermal expansion coefficient of the base material A is 8 to 10 ppm / ° C. due to the dispersion of the metal component 1d such as Cu. At this time, Cu
It has been experimentally confirmed that when Ag is contained, the wettability between Cu and the carbonaceous base material 1b is good at high temperature and high pressure. When a metal other than Ag is contained in Cu, titanium carbide (Ti) is interposed between the metal and Cu.
C), chromium carbide (CrC), zirconium carbide (Zr
C), carbides such as tungsten carbide (WC) are generated, and Cu and the carbonaceous base material 1b adhere to each other via the carbides. From this, the heat transfer between Cu and the carbonaceous base material 1b is further improved, and the heat generated by the semiconductor element 2 is also transferred well in the direction parallel to the mounting surface.
The heat transfer is very good.

Further, since the metal component 1d such as Cu is dispersed in the substrate A, the crush of the screwed portion 12 of the substrate A is greatly reduced. Accordingly, when the semiconductor package is tightly fixed to the external device by screws, the semiconductor package can be firmly tightened.

As shown in FIG. 2, the base 1 has an adhesive layer 6 made of Fe or stainless steel for adjusting the thermal expansion coefficient of the base A, and a Cu layer 7 on the upper and lower surfaces of the base A. A metal layer B having a two-layer structure is formed. The Cu layer 7
It also serves as a heat transfer medium that transfers the heat generated by the semiconductor element 2 in the horizontal direction (plane direction). The base 1 is attached to the lower surface of the frame 3 by brazing the metal layer B on the upper main surface of the base 1 to the lower surface of the frame 3 via a brazing material such as solder or silver brazing. .

Further, since the metal layer B composed of the adhesive layer 6 made of Fe or stainless steel and the Cu layer 7 is formed on the upper and lower surfaces of the substrate A, the metal layer B reduces the thermal expansion coefficient of the substrate 1. It has a function of approximating the coefficient of thermal expansion of the frame 3. Further, even if the surface of the base material A is porous having many pores, the pores are completely closed by the metal layer B. As a result, the reliability of hermetic sealing inside the semiconductor package is high. Further, when the semiconductor device 2 is housed inside the semiconductor package to form a semiconductor device, and then the hermetic inspection of the semiconductor device is performed using helium, a part of helium may be trapped in the pores of the base material A. Is effectively prevented, and the inspection for hermetic sealing of the semiconductor device can be accurately performed.

In the present invention, the adhesive layer 6 is formed on the base material A in advance because the Cu layer 7 which is hardly bonded to carbon is formed by the adhesive layer 6.
In this case, iron atoms and carbon atoms mutually diffuse at a high temperature, and a large bonding strength can be obtained. In addition, physical bonding strength due to the anchor effect can be obtained even for a metal component 1d such as Cu partially appearing on the surface of the base material A.

The outermost surface of the substrate 1 has a Cu plating layer 8
The Cu plating layer 8 on the side surface serves as a heat transfer medium for guiding the heat transmitted to the side surface to the lower surface, and the frame 3
Also, when the input / output terminal 4 is fitted into the mounting portion 3a and joined with a brazing material, the wettability of the brazing material is improved. If the thickness of the Cu plating layer 8 is less than 0.5 μm, the wettability of the brazing material tends to decrease, and the Cu plating layer 8 does not function effectively as a heat transfer path. When the thickness of the Cu plating layer 8 exceeds 5 μm, the carbonaceous base material 1
A large stress is generated between b and the Cu plating layer 8, resulting in a large stress. The thickness of the Cu plating layer 8 is preferably 0.5 to 5 μm since the Cu plating layer 8 is easily peeled off due to the inherent stress.

In the present invention, the metal layer B is formed of the two layers of the adhesive layer 6 and the Cu layer 7 because the Cu layer 7 is formed via the adhesive layer 6 to thereby prevent the heat of the base material A from being formed. The thermal expansion coefficient of the frame 3 made of an Fe—Ni—Co alloy or an Fe—Ni alloy is 10 to 13 ppm / ° C. (room temperature to 800
° C).

The thickness of the adhesive layer 6 is 5 to 30 μm,
It is preferable that the thickness of the Cu layer 7 be 5 to 30 μm.
If the thickness of the adhesive layer 6 is less than 5 μm, the function as the adhesive layer when forming the Cu layer 7 will not be achieved. When the thickness of the adhesive layer 6 exceeds 30 μm, the adhesive layer 6 may be peeled off from the surface of the base material A due to thermal stress generated due to a difference in thermal expansion coefficient between the adhesive layer 6 and the base material A. Therefore, the adhesion to the substrate A is deteriorated.

If the thickness of the Cu layer 7 is less than 5 μm, the effect of increasing the coefficient of thermal expansion of the substrate 1 is reduced, and the frame 1 made of an Fe—Ni—Co alloy or an Fe—Ni alloy When these are joined with a brazing material, cracks are easily generated in the brazing material. Further, the thickness of the Cu layer 7 is 30 μm.
Is exceeded, the thermal expansion coefficient of the base material A becomes too large, and cracks are easily generated in the brazing material when the frame 3 is joined to the upper surface of the base 1 with the brazing material.

As described above, the base member having the metal layer B having the thickness within the above-mentioned range and having the adhesive layer 6 made of Fe or stainless steel and the Cu layer 7 laminated on the upper and lower surfaces of the base member A. 1 means that the thermal expansion coefficient of iron is about 14 ppm / ° C.
(Room temperature to 800 ° C.), the coefficient of thermal expansion of stainless steel is 11 to 15 ppm / ° C. (room temperature to 800 ° C.), and the thermal expansion coefficient of copper is about 19 ppm / ° C. (room temperature to 800 ° C.). Has a thermal expansion coefficient of 8 to 10 ppm / ° C. (room temperature to 800 ° C.), and the thermal expansion coefficient of the base 1 is 10 to 13 ppm / ° C. (room temperature to 800 ° C.).

Thus, after the base 1 is attached to the lower surface of the frame 3, even if heat generated during operation of the semiconductor element 2 is applied to both the base 1 and the frame 3, there is a gap between the base 1 and the frame 3. Almost no thermal stress is generated due to the difference in thermal expansion coefficient between the two. Even when thermal stress is generated, the base 1 absorbs the thermal stress because the elastic modulus of the base 1 is small. As a result, the base 1 is firmly joined to the frame 3 and the semiconductor element 2 The heat generated during operation can be well diffused into the atmosphere. The thermal stress generated between the semiconductor element 2 and the base 1 may be deformed so that the base 1 absorbs the thermal stress, and a large thermal stress may be generated between the semiconductor element 2 and the base 1. There is no. Therefore, the semiconductor element 2 housed inside the container
Can operate normally and stably for a long period of time.

The metal layer B is adhered to the upper and lower surfaces of the substrate A by diffusion bonding. Specifically, the upper and lower surfaces of the substrate A are, for example, iron foil or stainless steel having a thickness of about 5 μm. A steel foil and a Cu foil having a thickness of, for example, about 20 μm are sequentially placed, and then applied by applying a temperature of 1200 ° C. for 1 hour while applying a pressure of 5 MPa (megapascal) by a vacuum hot press. .

The substrate 1 in which the metal layer B is formed on the upper and lower surfaces of the substrate A and the Cu plating layer 8 is applied, has a thermal conductivity of 350 to 400 W / m · K from the upper surface to the lower surface. The direction parallel to the mounting surface of the mounting portion 1a of the semiconductor element 2 is 250 to 300 W / m · K due to the carbon fiber dispersed inside the base material A and the metal component 1d such as Cu.
Is obtained. As a result, the base 1 can efficiently transmit the heat generated by the semiconductor element 2 mounted thereon in a random direction. Therefore, heat is efficiently dissipated from the entire lower surface of the base 1 and the base 1
The heat transmitted to the side surface of the substrate 1 is also transmitted through the Cu plating layer 8 and efficiently radiated from the lower surface of the base 1 to the outside.

When the thermal conductivity in the direction parallel to the mounting surface (joining surface) of the semiconductor element 2 is measured,
00W / m · K, which is 8 to 10 times larger than that using the unidirectional composite material 109 in which carbon fibers are bonded with carbon as shown in FIG. . That is, the heat generated by the semiconductor element 2 is transmitted to the base 1 via a thermoelectric cooling element (not shown in FIG. 1), and then in various directions in the base 1 from the upper surface side to the lower surface side of the base 1. The heat is efficiently transmitted by the heat transfer path, and is further radiated into the air via an external device.

When the carbonaceous base material 1b is impregnated with a metal component 1d such as Cu, the density of the base material A becomes ^{3 to 4} g / cm ^3.
Which is larger than the density (about 2 g / cm ³ ) of the base material A not impregnated with the metal component 1d such as Cu, but is 1 / compared to the conventionally used Cu-W alloy.
It is about 3 to 1/5, which is extremely light. Therefore, it is advantageous when mounted on an electronic device that is recently becoming smaller and lighter.

Furthermore, since the base 1 using the carbonaceous base material 1b has a smaller elastic modulus than a metal such as an Fe—Ni—Co alloy, the base 1 is provided between the base 1 and the frame 3, and Even if there is a difference in the coefficient of thermal expansion between
The thermal stress generated between them is absorbed by the substrate 1 being appropriately deformed. As a result, the base 1 and the frame 3,
In addition, the base 1 and the semiconductor element 2 are firmly bonded to each other so that the heat generated by the semiconductor element 2 can always be efficiently dissipated into the atmosphere, and that the semiconductor element 2 operates normally and stably for a long period of time. Can be.

The metal layer B is formed on the upper and lower surfaces of the carbonaceous base material 1b.
Is applied between the base material A and the metal layer B on the upper surface and between the base material A and the metal layer B on the lower surface. When the thermal stress is caused by the difference between the base material 1 and the metal layer B, the respective thermal stresses are in the same direction on the upper and lower surfaces and are substantially equal. It is not deformed by the generated thermal stress and is always flat. This makes it possible to firmly join the base 1 to the lower surface of the frame 3,
The heat generated by the operation of the semiconductor element 2 can be efficiently radiated into the atmosphere via the base 1.

The frame 3 of the present invention is attached to the outer peripheral portion of the upper main surface of the base 1 so as to surround the mounting portion 1a via an adhesive such as brazing material, glass or resin. Base 1
A space for accommodating the semiconductor element 2 is formed inside the frame body 3. This frame 3 is made of Fe—Ni—Co alloy or Fe
For example, it is made by molding an ingot (lump) of an Fe-Ni-Co alloy into a predetermined frame shape by a conventionally known metal working method such as a press molding method or an extrusion method.

The frame 3 made of an Fe—Ni—Co alloy or an Fe—Ni alloy has a thermal expansion coefficient of about 10 to 13 p.
pm / ° C. (room temperature to 800 ° C.), which is almost the same as the coefficient of thermal expansion of the substrate 1 of 10 to 13 ppm / ° C. Therefore, the thermal stress generated between the base 1 and the frame 3 is small,
Further, since the elastic modulus of the base 1 is smaller than that of a metal such as an Fe—Ni—Co alloy, even if a thermal stress is generated, the thermal stress is absorbed by an appropriate deformation of the base 1. Accordingly, it is possible to eliminate the occurrence of a defect such as a crack in the brazing material joining the frame 3 and the base 1, the occurrence of warpage of the base 1, and the like.

The frame 3 has a mounting portion 3a formed of a through hole or a cutout on a side portion thereof.
The input / output terminal 4 on which a plurality of metallized wiring layers 9 that conduct from the inside to the outside of the frame 3 is formed is fitted to a. The input / output terminals 4 function to dispose the metallized wiring layer 9 from the inside to the outside of the frame 3 with electrical insulation from the frame 3, and the aluminum oxide (Al)
₂ O ₃ ) An electrically insulating material such as a sintered body. And
A metallized layer is previously applied to the side surface of the input / output terminal 4 facing the inner surface of the mounting portion 3a, and this metallized layer is bonded to the inner peripheral surface of the mounting portion 3a via a brazing material such as silver brazing. The input / output terminal 4 is fitted to the mounting portion 3a of the frame 3.

The main body of the input / output terminal 4 made of an electrically insulating material is manufactured as follows. First, for example, Al ₂ O _3, silicon oxide (SiO _2), magnesium oxide (MgO), suitable binder material powder such as calcium oxide (CaO), was added and mixed solvents such as eggplant and slurry. The slurry is formed into a ceramic green sheet by employing a doctor blade method or a calender roll method. Then, the ceramic green sheet is subjected to an appropriate punching process and a metal layer serving as a metallized wiring layer 9 is formed. By laminating a plurality of the ceramic green sheets and firing at a temperature of about 1600 ° C., the main body of the input / output terminal 4 is manufactured.

Further, the input / output terminal 4 is formed such that a plurality of metallized wiring layers 9 conducting from the inside to the outside of the frame 3 are buried in the main body portion which is a ceramic laminate. Each electrode of the semiconductor element 2 is electrically connected to a portion of the metallized wiring layer 9 located inside the frame 3 via a bonding wire 10. An external lead terminal 11 connected to an external device is attached to the located portion via a brazing material such as silver brazing.

The metallized wiring layer 9 functions as a conductive path for connecting each electrode of the semiconductor element 2 to an external device, and includes tungsten (W), molybdenum (Mo), manganese (M
n) and the like and high melting point metal powder. The metallized wiring layer 9 is prepared by adding a paste obtained by adding a suitable organic binder, a solvent, and the like to a high melting point metal powder such as W, Mo, and Mn to a ceramic green sheet serving as the input / output terminal 4 in advance. Is formed on the input / output terminal 4 by printing and applying a predetermined pattern by the screen printing method described above and baking it.

The metallized wiring layer 9 is coated on its exposed surface with a metal having excellent corrosion resistance such as Ni or gold (Au) and excellent wettability with a brazing material in a thickness of 1 to 20 μm by plating. The metallized wiring layer 9 can be effectively prevented from being oxidized and corroded. Also,
The brazing of the external lead terminals 11 to the metallized wiring layer 9 can be strengthened.

External lead terminals 11 are brazed to the metallized wiring layer 9 via a brazing material such as silver brazing, and the external lead terminals 11 connect the respective electrodes of the semiconductor element 2 housed inside the container. It functions to electrically connect to an external device. By connecting the external lead terminal 11 to an external device, the semiconductor element 2 housed in the container is connected to the external device via the metallized wiring layer 9 and the external lead terminal 11. This external lead terminal 11
Is made of a metal material such as an Fe-Ni-Co alloy or an Fe-Ni alloy, and is subjected to a conventionally known metal working method such as a rolling method or a punching method on an ingot of the Fe-Ni-Co alloy. Thereby, it is formed in a predetermined shape.

Thus, according to the semiconductor package of the present invention, the semiconductor element 2 is made of glass,
The electrodes of the semiconductor element 2 are connected to predetermined metallized wiring layers 9 via bonding wires 10 while being fixed by bonding with an adhesive such as resin or brazing material. 5 is bonded via a sealing material made of glass, resin, brazing material, or the like, and the semiconductor element 2 is hermetically housed in a container including the base 1, the frame 3, and the lid 5, thereby forming a semiconductor product. Device.

The present invention is not limited to the above embodiment, and various changes can be made without departing from the gist of the present invention.

[0059]

According to the present invention, a substrate having a mounting portion on which a semiconductor element is mounted on an upper surface is formed by using at least one of silver, titanium, chromium, zirconium and tungsten in an amount of 0.2 to 10 parts by weight, The base material is a metal-carbon composite in which carbon fibers are dispersed in a carbonaceous base material impregnated with a metal component containing 90 to 99.8 parts by weight of iron or stainless steel on the upper and lower surfaces of the base material from the base material side. Since a metal layer is formed by sequentially laminating an adhesive layer made of steel and a copper layer, and further, a copper plating layer is applied to the side surface of the base material and the surface of the metal layer, the heat generated by the semiconductor element during operation is generated. By transmitting very efficiently from the upper main surface side of the base to the lower main surface side by a random route, and by transferring the heat transmitted to the side surface of the base to the lower main surface side by the Cu plating layer, Efficiently transfers large amounts of heat to the bottom of the substrate It is possible to dissipate from the surface side. As a result, the temperature of the semiconductor element is always kept at an appropriate temperature, and the semiconductor element can operate normally and stably for a long period of time.

[0060] Further, since the substrate has the above structure,
The elastic modulus of the substrate can be reduced. As a result, the thermal expansion coefficient of the base and the Fe—Ni—Co alloy or Fe—Ni
There is a difference between the thermal expansion coefficient of a frame made of a metal material such as an alloy, and even if heat is applied to the base and the frame to generate thermal stress, the base is appropriately deformed to reduce this thermal stress. Can absorb.

Further, since a metal component such as Cu is dispersed in the carbonaceous base material in the base material, the metal component imparts compressive strength capable of maintaining the shape of the base material against external stress. . For example, when a pressing force or a compressive stress is applied to the surface of the base when the screwed portion at the end of the base is screwed to an external device or the like, the base is not easily crushed by the compressive stress. For example, when screwing to an external device such as a motherboard, there is an effect that a problem that the base is crushed in the thickness direction is eliminated.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a semiconductor package of the present invention.

FIG. 2 is a partially enlarged sectional view of a base in the semiconductor package of FIG. 1;

FIG. 3A is a plan view of a conventional semiconductor package,
FIG. 2B is a cross-sectional view of a conventional semiconductor package, and FIG. 2C is a partially enlarged cross-sectional view of a base in the conventional semiconductor package.

[Explanation of symbols]

 1: Base 1a: Mounting portion 1b: Carbonaceous base material 1c: Aggregate of carbon fibers 1d: Metal component such as Cu 2: Semiconductor element 3: Frame 3a: Mounting portion 4: Input / output terminal 6: Adhesive layer 7 : Cu layer 8: Cu plating layer 12: Screwed part A: Base material B: Metal layer

Claims (1)

[Claims] 1. A base having a mounting portion on which a semiconductor element is mounted on an upper main surface and having screw portions at both ends, and a mounting portion on the upper main surface of the base so as to surround the mounting portion. In a semiconductor device housing package comprising a frame attached and having an input / output terminal attachment portion formed of a through hole or a notch portion, and the input / output terminal fitted to the attachment portion, the base is preferably , At least one of silver, titanium, chromium, zirconium and tungsten
The base material is a metal-carbon composite in which carbon fibers are dispersed in a carbonaceous matrix impregnated with a metal component containing 90 to 99.8 parts by weight of copper and 90 to 99.8 parts by weight of copper. A metal layer is formed by sequentially laminating an adhesive layer made of iron or stainless steel and a copper layer from the base material side, and a copper plating layer is further applied to the side surface of the base material and the surface of the metal layer. A semiconductor device storage package characterized by the above-mentioned.