JPH0915621A - Liquid crystal display device - Google Patents

Liquid crystal display device

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Publication number
JPH0915621A
JPH0915621A JP16336795A JP16336795A JPH0915621A JP H0915621 A JPH0915621 A JP H0915621A JP 16336795 A JP16336795 A JP 16336795A JP 16336795 A JP16336795 A JP 16336795A JP H0915621 A JPH0915621 A JP H0915621A
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Japan
Prior art keywords
pixel electrode
liquid crystal
display device
crystal display
pixel
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JP16336795A
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Japanese (ja)
Inventor
Chikage Doumoto
Shigeki Matsuo
Masayuki Nomoto
千景 堂本
茂樹 松尾
正幸 野元
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Kyocera Corp
京セラ株式会社
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Priority to JP16336795A priority Critical patent/JPH0915621A/en
Publication of JPH0915621A publication Critical patent/JPH0915621A/en
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Abstract

PURPOSE: To provide a wholly bright liquid crystal display device capable of improving the aperture rate of a pixel part by providing a pixel electrode even between the pixel electrode and scan signal wiring and preventing the reflection owing to the difference of a diffractive index and the lowering in transmissivity owing to that a thickness is increased by constituting the majority of the pixel electrode with a layer of transparent conductive film. CONSTITUTION: This device is the liquid crystal display device constituted so that plural image signal wiring 2 and plural scan signal wiring 1 are provided intersectedly, and the pixel electrodes 3 and switching elements 5 supplying an image signal to the pixel electrodes 3 are provided on crossing parts between the image signal wiring 2 and the scan signal wiring 1 in matrix, and a liquid crystal material is held between the pixel electrodes 3 and counter electrodes provided opposite to the pixel electrodes 3, and belt-like second pixel electrodes 4 projecting to the scan signal wiring side and/or the image signal wiring side from the pixel electrodes 3 are provided on the rear surface side of the pixel electrodes 3.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は液晶表示装置に関し、特に各画素電極にスイッチング素子を設けたアクティブマトリックス方式の液晶表示装置に関する。 The present invention relates to an LCD device, a liquid crystal display device of active matrix type in particular a switching element provided in each pixel electrode.

【0002】 [0002]

【従来の技術及び発明が解決しようとする課題】アクティブマトリックス方式の液晶表示装置は、単純マトリックス方式と比べてコントラストが高く、多階調表示特性に優れているため、カラー液晶表示装置では欠かせない技術となっている。 The liquid crystal display device of active matrix type BACKGROUND OF INVENTION Problems to be Solved] has high contrast as compared with the simple matrix system and excellent multi-gradation display characteristics, essential in the color liquid crystal display device which is that there is no technology. 特に、スイッチング素子として薄膜トランジスタを使用したアクティブマトリックス方式の液晶表示装置では、CRTと同等の画質が得られるようになった。 In particular, in the liquid crystal display device of active matrix type using a thin film transistor as a switching element has become CRT equivalent quality is obtained.

【0003】以下、図面を参照しながら、従来の液晶表示装置を説明する。 [0003] Hereinafter, with reference to the accompanying drawings, illustrating a conventional liquid crystal display device. 図10は、従来の液晶表示装置の画素部分の拡大図、図11及び図12はそれぞれ図10のA−A'線及びB−B'線断面図である。 Figure 10 is an enlarged view of a pixel portion of a conventional liquid crystal display device, FIG. 11 and FIG. 12 is an A-A 'line and line B-B' sectional view of FIG. 10, respectively.

【0004】図10、図11及び図12において、25 [0004] In FIG. 10, 11 and 12, 25
は金属膜よりなる走査信号配線及びこの走査信号配線と同時に形成される薄膜トランジスタのゲート電極(G)、26は金属膜や透明導電膜よりなる画像信号配線および薄膜トランジスタ28のソース(S)電極、2 Source (S) electrodes of the image signal lines and the thin film transistor 28 is the gate electrode of the thin film transistor to be formed at the same time as the scanning signal lines and the scanning signal lines formed of a metal film (G), 26 is made of a metal film or a transparent conductive film, 2
7は透明導電膜よりなる画素電極及び薄膜トランジスタのドレイン(D)電極、28はトップゲート型の薄膜トランジスタ、29は薄膜トランジスタ28の半導体膜、 7 of the pixel electrodes and thin film transistors made of a transparent conductive film drain (D) electrode, the top-gate type thin film transistor 28, 29 is a semiconductor film of the thin film transistor 28,
30は薄膜トランジスタ28のチャネル部に入射する光を遮光するための遮光用金属膜、31は絶縁膜、32は薄膜トランジスタ28のゲート絶縁膜、33は液晶材料、34は対向電極、35、36は透明ガラス基板、C 30 the light-shielding metal film for shielding light incident on the channel portion of the thin film transistor 28, 31 denotes an insulating film, 32 denotes a gate insulating film of the thin film transistor 28, 33 is a liquid crystal material, 34 counter electrode, 35 and 36 transparent glass substrate, C
LCは画素電極27と対向電極34との間の液晶容量、C LC liquid crystal capacitance between the pixel electrode 27 and the counter electrode 34, C
Sは画素電極27と隣接する走査信号配線25'との間の付加容量である。 S is an additional capacitance between the scanning signal lines 25 'adjacent to the pixel electrode 27.

【0005】このアクティブマトリックス方式の液晶表示装置では、走査信号配線25から供給される走査信号によってトップゲート型の薄膜トランジスタ28がスイッチングされ、画像信号配線26の信号電圧をドレイン(D)電極の延長である画素電極27に印加することにより、画素電極27と対向電極34との間に保持された液晶材料に電圧を印加して、画像の表示を行うものである。 [0005] In the liquid crystal display device of the active matrix type, a top gate thin film transistor 28 is switched by a scan signal supplied from the scanning signal line 25, a signal voltage of the image signal lines 26 in the extension of the drain (D) electrode by applying a certain pixel electrode 27, by applying a voltage to the liquid crystal material held between the pixel electrode 27 and the counter electrode 34, and performs display of the image. 付加容量C Sは液晶材料33に印加する電圧を一定時間保持するための電荷保持用の容量である。 Additional capacitance C S is the capacitance of the charge retention for holding a predetermined time the voltage applied to the liquid crystal material 33.

【0006】上述のような液晶表示装置では、図11に示すように、画素電極27と隣接する画素電極27'が絶縁膜31とゲート絶縁膜32にはさまれた同じレベルの層であるため、この両者が短絡しないように、両者間に充分な間隔L1を設ける必要があり、このため画素電極27を充分大きくすることができず、その結果画素部分の開口率が低下するという問題があった。 [0006] In the liquid crystal display device as described above, as shown in FIG. 11, the pixel electrode 27 adjacent to the pixel electrode 27 'is a layer of the same level sandwiched between the insulating film 31 and the gate insulating film 32 as this they do not short-circuit, it is necessary to provide both sufficient spacing between L1, Thus it is impossible to sufficiently increase the pixel electrode 27, there is a problem that as a result the pixel portion of the opening ratio is reduced It was. 特に、小型・高精細の液晶表示装置では、その影響が顕著であった。 In particular, in the liquid crystal display device of compact, high-definition, the effect was remarkable.

【0007】また、図12に示すように、画素電極27 Further, as shown in FIG. 12, the pixel electrode 27
と画像信号配線26、26'も絶縁膜31とゲート絶縁膜32にはさまれた同じレベルの層であるため、両者間に充分な間隔L2を設ける必要があり、この理由によっても画素部分の開口率が低下するという問題があった。 Because the image signal lines 26, 26 'is also a layer of the same level sandwiched between the insulating film 31 and the gate insulating film 32, it is necessary to provide a sufficient distance between the two L2, the pixel portion is also for this reason the aperture ratio is lowered.

【0008】すなわち、従来の液晶表示装置では、図1 Namely, in the conventional liquid crystal display device, FIG. 1
3に示すように、画素電極27部分における光の透過可能な領域はP1で示す斜線部分の領域しかなく、画素部分の開口率が小さいものであった。 As shown in 3, permeable area of ​​light in the pixel electrode 27 portion is only the region of the hatched portion indicated at P1, were those aperture ratio of the pixel portion is small.

【0009】このような問題を解決するために、本出願人は、特願平5−330785号において、図14、図15、図16及び図17に示すように、画素電極を上層画素電極43と下層画素電極44で構成し、下層画素電極44を上層画素電極43よりも走査信号配線41側及び画像信号配線42、42'側に張り出して形成すると共に、金属膜から成る走査信号配線41と透明導電膜から成る付加容量用電極47を設けた液晶表示装置を提案した。 [0009] In order to solve such problems, the applicant has in Japanese Patent Application No. Hei 5-330785, 14, 15, as shown in FIGS. 16 and 17, the upper layer pixel electrode 43 and a pixel electrode and composed of lower-layer pixel electrode 44, the lower pixel electrode 44 and forming overhangs side scanning signal lines 41 and the image signal lines 42, 42 'side of the upper pixel electrode 43, the scanning signal lines 41 made of a metal film It proposed a liquid crystal display device provided with additional capacitor electrode 47 made of a transparent conductive film. 上層画素電極43と下層画素電極44との間には、窒化シリコン膜や酸化タンタル膜などから成る絶縁膜48を介在させてある。 Between the upper layer pixel electrode 43 and the lower-layer pixel electrode 44, it is interposed an insulating film 48 made of a silicon film or a tantalum oxide nitride film. 上層画素電極43及び下層画素電極44は、例えばITO(酸化インジウム錫)や酸化錫(SnO)などの透明導電膜で形成される。 Upper-layer pixel electrode 43 and the lower-layer pixel electrode 44 is formed of a transparent conductive film such as ITO (indium tin oxide) or tin oxide (SnO). この場合、上層画素電極43と下層画素電極44がゲート絶縁膜48を介して大きな面積で重なっているため、下層画素電極44と対向電極51との間の液晶容量C LC2に比べて上下画素電極43、44間の重なり容量Caが大幅に大きくなり、その結果、下層画素電極44も上層画素電極43と同じ働きをするようになる。 In this case, since the upper-layer pixel electrode 43 and the lower-layer pixel electrode 44 overlaps a large area via a gate insulating film 48, the upper and lower pixel electrode as compared to the liquid crystal capacitor C LC2 between the lower-layer pixel electrode 44 and the counter electrode 51 overlap capacitance Ca between 43 and 44 becomes much larger, as a result, also the lower pixel electrode 44 so that the same function as the upper-layer pixel electrode 43.

【0010】なお、図15は図14のA−A'線断面図、図16は図14のB−B'線断面図、図17は図1 [0010] Incidentally, FIG. 15 A-A 'sectional view, FIG. 16 B-B' of FIG. 14 in FIG. 14 line cross-sectional view, FIG. 17 FIG. 1
4のC−C'線断面図である。 A line C-C 'sectional view of 4.

【0011】このように、画素電極を上層画素電極43 [0011] Thus, the upper pixel electrode and a pixel electrode 43
と下層画素電極44で構成すると共に、下層画素電極4 Together to constitute at lower pixel electrode 44, the lower pixel electrode 4
4を走査信号配線41及び画像信号配線42、42'側に張り出して形成すると、図18に示すように、画素電極をP1の領域のみならず、P2、P3及びP4の領域まで広げることができ、画素部分の開口率を向上させることができる。 4 to form overhangs the scanning signal lines 41 and the image signal lines 42, 42 'side, as shown in FIG. 18, not only the region of the pixel electrode P1, can be extended to the region of the P2, P3 and P4 , it is possible to improve the aperture ratio of the pixel portion.

【0012】ところが、この従来の液晶表示装置は、上層画素電極43と下層画素電極44は透明導電膜で形成されるものの、この上層画素電極43と下層画素電極4 [0012] However, this conventional liquid crystal display device, although the upper layer pixel electrode 43 and the lower-layer pixel electrode 44 is formed of a transparent conductive film, the upper-layer pixel electrode 43 and the lower pixel electrode 4
4は大部分の領域で重なりあっていることから、この重なり部分では画素電極の実質的な膜厚は厚くなる。 4 because it is overlapped by the majority of the area, a substantial thickness of the pixel electrode in this overlap portion becomes thicker. また、上層画素電極43と下層画素電極44を設けると、 Also provided as the top pixel electrode 43 and the lower-layer pixel electrode 44,
屈折率が異なる複数の層を光が透過することになり、界面部分での光の反射が発生する。 Will be the refractive index of light of different layers are transmitted, reflection of light at the interface portion is generated. その結果、この従来の液晶表示装置では、光の透過率が5〜10%低下し、表示装置全体が暗くなるという問題があった。 As a result, the conventional liquid crystal display device, light transmittance is reduced 5-10%, there is a problem that the entire display becomes dark.

【0013】 [0013]

【発明の目的】本発明に係る液晶表示装置は、このような従来装置の問題点に鑑みて発明されたものであり、画素部分の開口率が大きく、しかも光の透過率が低減することのない明るい液晶表示装置を提供することを目的とする。 The liquid crystal display device according to the present invention is an object of the invention has been invented in view of such problems of the prior art devices, greatly aperture ratio of the pixel portion, moreover that the transmittance of light is reduced and to provide a no bright liquid crystal display device.

【0014】 [0014]

【課題を解決するための手段】上記目的を達成するために、本発明に係る液晶表示装置では、複数の画像信号配線と、複数の走査信号配線を交差して設け、この画像信号配線と走査信号配線との交差部に 画素電極とこの画素電極に画像信号を供給するスイッチング素子とをマトリックス状に設け、前記画素電極と、この画素電極に対向して設けられた対向電極との間に液晶材料が保持されている液晶表示装置において、前記画素電極の裏面側に、この画素電極よりも前記走査信号配線側及び/又は前記画像信号配線側に張り出した帯状の第2の画素電極を設けた。 To achieve the above object, according to the solution to ## with a liquid crystal display device according to the present invention includes a plurality of image signal lines, arranged to cross the plurality of scanning signal lines, the image signal lines and the scanning a switching element for supplying an image signal to the pixel electrode and the pixel electrode at the intersection of the signal lines arranged in a matrix, liquid crystal between said pixel electrode, a counter electrode opposed to the pixel electrode in the liquid crystal display device the material is held, on the back side of the pixel electrode, it is provided a second pixel electrode of the strip overhanging the scanning signal wiring side and / or the image signal line side of the pixel electrode .

【0015】 [0015]

【作用】上記のように、画素電極の裏面側に、この画素電極から張り出した第2の画素電極を設けると、画素部の開口率が向上すると共に、画素部分の殆どの領域は一層の透明導電膜で構成されることから、光透過率が向上し、もって全体として明るい液晶表示装置になる。 [Action] As described above, on the back side of the pixel electrode, providing a second pixel electrode that projects from the pixel electrode, thereby improving the aperture ratio of the pixel portion, most regions of the pixel portion is more transparent from being of a conductive film, to improve light transmittance becomes brighter liquid crystal display device as a whole have.

【0016】 [0016]

【実施例】以下、本発明の実施例を添付図面に基づき詳細に説明する。 EXAMPLES Hereinafter, a description will be given of an embodiment attached in detail with reference to the accompanying drawings of the present invention. 図1は、本発明に係る液晶表示装置の一実施例を示す図であり、図2は図1のA−A'線断面図、図3は図1のB−B'線断面図である。 Figure 1 is a diagram showing an embodiment of a liquid crystal display device according to the present invention, FIG. 2 A-A 'sectional view, FIG. 3 B-B' of FIG. 1 in FIG. 1 is a sectional view taken along the line . 図1ないし図3において、1は走査信号配線、2は画像信号配線、 1 to 3, 1 is the scanning signal lines, 2 an image signal lines,
3は画素電極、4は第2の画素電極、5は薄膜トランジスタから成るスイッチング素子、6は保護膜、7は液晶材料、8は対向電極、9、10は透明ガラス基板である。 3 pixel electrode, the 4 second pixel electrode, 5 is a switching element consisting of a thin film transistor, the 6 protective film, 7 a liquid crystal material, 8 is a counter electrode, a transparent glass substrate 9.

【0017】走査信号配線1と画像信号配線2は、それぞれ複数設けられており、この走査信号配線1と画像信号配線2の各交差部分に画素電極3およびスイッチング素子5が設けられている。 The scanning signal lines 1 and the image signal line 2, respectively provided with a plurality, the pixel electrode 3 and the switching element 5 is provided at each intersection of the scanning signal lines 1 and the image signal line 2.

【0018】スイッチング素子5は、走査信号配線1に連続して形成されたゲート電極(G)、ゲート絶縁膜1 [0018] The switching element 5, the scan signal gate electrodes formed continuously to the wire 1 (G), the gate insulating film 1
1、チャネル部となる半導体膜12、画像信号配線2に連続して形成されたソース電極(S)、画素電極3に連続して形成されたドレイン電極(D)で主として構成される。 1, the semiconductor film 12 serves as a channel portion mainly composed of the source electrodes formed continuously to the image signal line 2 (S), a drain electrode formed continuously in the pixel electrode 3 (D). このスイッチング素子5は、ゲート電極(G)が下方に位置し、ソース電極(S)及びドレイン電極(D)が上方に位置する逆スタガ構造に形成される。 The switching element 5, the gate electrode (G) is located below the source electrode (S) and drain electrode (D) is formed in an inverted staggered structure located above. このようにスイッチング素子5を逆スタガ構造に形成すると、従来必要であったトランジスタのチャネル部の遮光用金属膜が不要になると共に、後述する付加容量用電極を透明導電膜で同時に形成できるようになる。 With this form the switching element 5 in the reverse stagger structure, together with the light-shielding metal film in the channel portion of the conventionally required transistors is not required, so as to form simultaneously the additional capacitor electrode, which will be described later in the transparent conductive film Become.

【0019】走査信号配線1およびゲート電極(G) The scanning signal lines 1 and the gate electrode (G)
は、アルミニウム(Al)やタンタル(Ta)などの金属薄膜で形成される。 It is formed of a metal thin film such as aluminum (Al), tantalum (Ta). ゲート絶縁膜11は、窒化シリコン(SiN x )、酸化シリコン(SiO 2 )、酸化タンタル(TaO x )などで形成される。 The gate insulating film 11, silicon nitride (SiN x), silicon oxide (SiO 2), it is formed in such a tantalum oxide (TaO x). 半導体膜12はアモルファスシリコン膜などで形成される。 The semiconductor film 12 is formed like an amorphous silicon film.

【0020】画像信号配線2、ソース電極(S)及びドレイン電極(D)は、アルミニウム(Al)、チタン(Ti)、モブリブデン(Mo)などの金属膜やこれら金属膜とITOなどの透明導電膜との積層膜で形成される。 The image signal lines 2, the source electrode (S) and drain electrode (D) is aluminum (Al), titanium (Ti), a transparent conductive film such as a metal film or the metal film and the ITO such Moburibuden (Mo) It is a laminate film of a. 画素電極3および第2の画素電極4はITOなどの透明導電膜で形成される。 Pixel electrodes 3 and the second pixel electrode 4 is formed of a transparent conductive film such as ITO.

【0021】画素電極3と隣接する走査信号配線1'との間で、液晶材料7に印加する電圧を一定期間保持するための付加容量C Sが、画素電極3と対向電極8との間で液晶容量C LC1が、第2の画素電極4と対向電極8との間で液晶容量C LC2が、画素電極3と第2の画素電極4との間で重なり容量Caがそれぞれ形成される。 [0021] In between the scanning signal lines 1 'and the adjacent pixel electrode 3, the additional capacitance C S for holding constant a voltage applied to the liquid crystal material 7 period, between the pixel electrode 3 and the counter electrode 8 liquid crystal capacitance C LC1 is, the liquid crystal capacitance C LC2 between the second pixel electrode 4 and the counter electrode 8, capacitor Ca overlap between the pixel electrode 3 and the second pixel electrode 4 are respectively formed.

【0022】この液晶表示装置では、逆スタガ型の薄膜トランジスタ5によりスイッチングされ、画像信号配線2の信号電圧をドレイン電極(D)の延長である画素電極3に印加することにより、画素電極3及び第2の画素電極4と対向電極11との間に保持された液晶材料7に電圧を印加して画像の表示を行う。 [0022] In this liquid crystal display device is switched by a thin film transistor 5 inverted staggered, by applying a signal voltage of the image signal lines 2 to the pixel electrode 3 is an extension of the drain electrode (D), the pixel electrode 3 and the a voltage to the liquid crystal material 7 which is held between the second pixel electrode 4 and the counter electrode 11 is applied to display a picture.

【0023】また、画素電極3の裏面側に、絶縁膜11 Further, on the back side of the pixel electrode 3, the insulating film 11
を介して帯状の第2の画素電極4が走査信号配線1及び画像信号配線2側に張り出して形成されている。 The second pixel electrode 4 of the strip is formed overhangs 2 side scanning signal lines 1 and the image signal lines through. この場合、画素電極3と第2の画素電極4は、画素電極3と第2の画素電極4との間の重なり容量Caが第2の画素電極と対向電極との間の液晶容量C LC2の2倍以上となるように形成することが望ましい。 In this case, the pixel electrode 3 and the second pixel electrode 4 and the pixel electrode 3 overlap capacitance Ca between the second pixel electrode 4 of the liquid crystal capacitor C LC2 between the second pixel electrode and the counter electrode it is desirable to form to be 2 times or more. このように第2の画素電極4を画素電極3と第2の画素電極4との間の重なり容量Caが第2の画素電極4と対向電極との間の液晶容量C LC2の2倍以上となるように形成すると、第2の画素電極4にも画素電極3の2/3以上の電圧が印加されるようになり、第2の画素電極4も画素電極3と同じ働きをするようになる。 And thus more than twice of the second liquid crystal capacitance between overlapping capacitance Ca between the pixel electrode 4 and the pixel electrode 3 and the second pixel electrode 4 and second pixel electrode 4 and the counter electrode C LC2 becomes so formed, so that more than 2/3 of the voltage of the pixel electrode 3 to the second pixel electrode 4 is to be applied, the second pixel electrode 4 is also the same function as the pixel electrode 3 .

【0024】なお、帯状の第2の画素電極4を走査信号配線側のみに設けても、その限りにおいて、画素部分の開口率を向上させることができる。 [0024] Also provided second pixel electrodes 4 of the strip only to the scanning signal line side, insofar, it is possible to improve the aperture ratio of the pixel portion.

【0025】図4〜図6は、他の実施例を示す図である。 [0025] FIGS. 4 to 6 are views showing another embodiment. この実施例では、画素電極3の一方端を隣接する走査信号配線1'上の途中まで延在するように形成すると共に、画素電極3の他方端を走査信号配線1に近接して設けている。 In this embodiment, as well as formed to extend to the middle of the scanning signal lines 1 'adjacent the one end of the pixel electrode 3, are provided adjacent the other end of the pixel electrode 3 to the scanning signal lines 1 . 画素電極3と走査信号配線1は絶縁膜11 Pixel electrode 3 and the scanning signal line 1 is the insulating film 11
を介して形成される異なるレベルの層であるため、画素電極3の他方端は走査信号配線1に近接して設けることができる。 Since a layer of different levels that are formed through the other end of the pixel electrode 3 can be provided adjacent to the scan signal line 1.

【0026】また、この実施例では、帯状の第2の画素電極4を画素電極3の裏面側に、この画素電極3よりも画像信号配線2側に張り出して形成している。 Further, in this embodiment, the second pixel electrode 4 of the strip on the back side of the pixel electrodes 3 are formed by projecting the image signal line 2 side of the pixel electrode 3.

【0027】この場合も、第2の画素電極4が画素電極3と同じ働きをするように、画素電極3と第2の画素電極4との間の重なり容量Caを第2の画素電極4と対向電極11との間の液晶容量C LC2の2倍以上となるように形成する。 [0027] In this case, as the second pixel electrode 4 is the same function as the pixel electrode 3, and the overlap capacitance Ca between the pixel electrode 3 and the second pixel electrode 4 and the second pixel electrode 4 formed to be at least twice the liquid crystal capacitance C LC2 between the counter electrode 11.

【0028】このように、画素電極3を走査信号配線1 [0028] Thus, the scanning signal line to the pixel electrode 3 1
に近接して設けると共に、この画素電極3の裏面側に帯状の第2の画素電極4を画像信号配線2、2'側に張り出して設けるても、画素部分の開口率を挙げることができると共に、画素部分の光透過率を上げることができる。 Provided with close to, even provided overhanging the second pixel electrode 4 of the strip on the back side of the pixel electrode 3 to the image signal lines 2 and 2 'side, it is possible to include an aperture ratio of a pixel portion , it is possible to increase the light transmittance of the pixels moiety.

【0029】図7〜図9は、その他の実施例を示す図である。 [0029] FIGS. 7 to 9 are views showing other examples. この実施例では画素電極3の裏面側に帯状の第2 The second strip on the back side of the pixel electrode 3 in this embodiment
の画素電極4をロ字状に設けている。 Are provided in the pixel electrode 4 in the hollow square shape. このように、第2 In this way, the second
の画素電極4をロ字状に設けると、画素電極4の裏面側の比較的広い領域にわたって画素電極と第2の画素電極4が重なり合うことから、第2の画素電極4の一部が断線しても、その他の部分は有効に機能させることができる。 The provision of the pixel electrode 4 in the hollow square shape, since the pixel electrode and the second pixel electrode 4 overlap over a relatively large area of ​​the back surface side of the pixel electrode 4, a portion of the second pixel electrode 4 is broken even, other parts can be effectively functions.

【0030】 [0030]

【発明の効果】以上のように、本発明に係る液晶表示装置によれば、画素電極の裏面側に、この画素電極よりも走査信号配線側及び/又は画像信号配線側に張り出した帯状の第2の画素電極を設けたことから、画素電極と走査信号配線との間にも画素電極が存在し、実質的に画素電極の面積が広くなり、画素部の開口率が向上すると共に、画素電極の大部分は一層の透明導電膜で構成されることから、屈折率が相違する複数層を積層した場合の反射や、厚みが増すことによる光の透過率の低下も防止でき、全体として明るい液晶表示装置となる。 As is evident from the foregoing description, according to the liquid crystal display device according to the present invention, on the back side of the pixel electrode, the first band-shaped overhanging the scanning signal wiring side and / or the image signal line side of the pixel electrode since the provision of the second pixel electrode, the present even pixel electrode between the scanning signal lines and the pixel electrodes, substantially the area of ​​the pixel electrode is widened, thereby improving the aperture ratio of the pixel portion, the pixel electrode most of it is constituted by a layer of transparent conductive films, reflection and when the refractive index is formed by laminating a plurality of layers of different, also decrease in transmittance of light by increasing the thickness can be prevented as a whole a bright LCD the display device.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明に係る液晶表示装置の一実施例を示す図である。 1 is a diagram showing an embodiment of a liquid crystal display device according to the present invention.

【図2】図1のA−A'線断面図である。 2 is a section along the line A-A 'of FIG 1.

【図3】図1のB−B'線断面図である。 3 is a line B-B 'sectional view of FIG.

【図4】本発明に係る液晶表示装置の他の実施例を示す図である。 Is a diagram showing another embodiment of the liquid crystal display device according to the present invention; FIG.

【図5】図4のA−A'線断面図である。 5 is a section along the line A-A 'of FIG. 4.

【図6】図4のB−B'線断面図である。 6 is a line B-B 'sectional view of FIG.

【図7】本発明に係る液晶表示装置のその他の実施例を示す図である。 7 is a diagram showing another embodiment of the liquid crystal display device according to the present invention.

【図8】図7のA−A'線断面図である。 8 is a section along the line A-A 'of FIG 7.

【図9】図7のB−B'線断面図である。 9 is a line B-B 'sectional view of FIG.

【図10】従来の液晶表示装置の画素部分の拡大図である。 10 is an enlarged view of a pixel portion of a conventional liquid crystal display device.

【図11】図10のA−A'線断面図である。 11 is a section along the line A-A 'of FIG 10.

【図12】図10のB−B'線断面図である。 12 is a line B-B 'sectional view of FIG. 10.

【図13】従来の液晶表示装置における画素部分の開口部を示す図である。 13 is a diagram showing the opening of the pixel portion in a conventional liquid crystal display device.

【図14】従来の他の液晶表示装置の画素部分を示す図である。 14 is a diagram showing a pixel portion of another conventional liquid crystal display device.

【図15】図15のA−A'線断面図である It is A-A 'sectional view of FIG. 15

【図16】図15のB−B'線断面図である。 16 is a line B-B 'sectional view of FIG. 15.

【図17】図15のC−C'線断面図である。 17 is a line C-C 'sectional view of FIG. 15.

【図18】従来の他の液晶表示装置における画素部分の開口率を示す図である。 18 is a diagram showing an aperture ratio of a pixel portion in the conventional LCD device.

【符号の説明】 DESCRIPTION OF SYMBOLS

1・・・走査信号配線、2・・・画像信号配線、3・・ 1 ... scanning signal lines, 2 ... image signal lines, 3 ...
・画素電極、4・・・第2の画素電極、5・・・スイッチング素子、6・・・保護膜、7・・・液晶材料、8・ - pixel electrode, 4 ... second pixel electrode, 5 ... switching device, 6 ... protective film, 7 ... liquid crystal material, 8-
・・対向電極 ... counter electrode

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 複数の画像信号配線と、複数の走査信号配線とを交差して設け、この画像信号配線と走査信号配線との交差部に、画素電極とこの画素電極に画像信号を供給するスイッチング素子とをマトリックス状に設け、 1. A provided to intersect with the plurality of image signal lines, and a plurality of scanning signal lines, the intersection of the image signal lines and the scanning signal lines, and supplies the image signal to the pixel electrode and the pixel electrode a switching element provided in a matrix form,
    前記画素電極とこの画素電極に対向して設けられた対向電極との間に液晶材料が保持されている液晶表示装置において、前記画素電極の裏面側に、この画素電極よりも前記走査信号配線側及び/又は前記画像信号配線側に張り出した帯状の第2の画素電極を設けたことを特徴とする液晶表示装置。 In the liquid crystal display device in which liquid crystal material is held between the counter electrode provided opposite to the pixel electrode and the pixel electrode, on the back side of the pixel electrode, the scanning signal lines side of the pixel electrode and / or a liquid crystal display device characterized by having a second pixel electrode of the strip protruding in the image signal wiring side.
  2. 【請求項2】 前記画素電極と前記第2の画素電極との間の重なり容量Caが、前記第2の画素電極と前記対向電極との間の液晶容量C LC2の2倍以上であることを特徴とする請求項1に記載した液晶表示装置。 Wherein the overlap capacitance Ca between the said pixel electrode second pixel electrodes, said at second pixel electrode at least twice the liquid crystal capacitance C LC2 between the counter electrode the liquid crystal display device according to claim 1, wherein.
  3. 【請求項3】 前記スイッチング素子が逆スタガ型薄膜トランジスタであることを特徴とする請求項1に記載した液晶表示装置。 3. A liquid crystal display device according to claim 1, wherein the switching element is an inverted staggered thin film transistor.
JP16336795A 1995-06-29 1995-06-29 Liquid crystal display device Pending JPH0915621A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16336795A JPH0915621A (en) 1995-06-29 1995-06-29 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16336795A JPH0915621A (en) 1995-06-29 1995-06-29 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH0915621A true JPH0915621A (en) 1997-01-17

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