JPH0915621A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH0915621A
JPH0915621A JP16336795A JP16336795A JPH0915621A JP H0915621 A JPH0915621 A JP H0915621A JP 16336795 A JP16336795 A JP 16336795A JP 16336795 A JP16336795 A JP 16336795A JP H0915621 A JPH0915621 A JP H0915621A
Authority
JP
Japan
Prior art keywords
pixel electrode
liquid crystal
display device
crystal display
signal wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16336795A
Other languages
Japanese (ja)
Inventor
Shigeki Matsuo
茂樹 松尾
Chikage Doumoto
千景 堂本
Masayuki Nomoto
正幸 野元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP16336795A priority Critical patent/JPH0915621A/en
Publication of JPH0915621A publication Critical patent/JPH0915621A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a wholly bright liquid crystal display device capable of improving the aperture rate of a pixel part by providing a pixel electrode even between the pixel electrode and scan signal wiring and preventing the reflection owing to the difference of a diffractive index and the lowering in transmissivity owing to that a thickness is increased by constituting the majority of the pixel electrode with a layer of transparent conductive film. CONSTITUTION: This device is the liquid crystal display device constituted so that plural image signal wiring 2 and plural scan signal wiring 1 are provided intersectedly, and the pixel electrodes 3 and switching elements 5 supplying an image signal to the pixel electrodes 3 are provided on crossing parts between the image signal wiring 2 and the scan signal wiring 1 in matrix, and a liquid crystal material is held between the pixel electrodes 3 and counter electrodes provided opposite to the pixel electrodes 3, and belt-like second pixel electrodes 4 projecting to the scan signal wiring side and/or the image signal wiring side from the pixel electrodes 3 are provided on the rear surface side of the pixel electrodes 3.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は液晶表示装置に関し、特
に各画素電極にスイッチング素子を設けたアクティブマ
トリックス方式の液晶表示装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to an active matrix liquid crystal display device in which a switching element is provided in each pixel electrode.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】アクテ
ィブマトリックス方式の液晶表示装置は、単純マトリッ
クス方式と比べてコントラストが高く、多階調表示特性
に優れているため、カラー液晶表示装置では欠かせない
技術となっている。特に、スイッチング素子として薄膜
トランジスタを使用したアクティブマトリックス方式の
液晶表示装置では、CRTと同等の画質が得られるよう
になった。
2. Description of the Related Art Liquid crystal display devices of the active matrix type are indispensable for color liquid crystal display devices because they have higher contrast and excellent multi-tone display characteristics than those of the simple matrix type. It has become a technology. Particularly, in an active matrix type liquid crystal display device using a thin film transistor as a switching element, an image quality equivalent to that of a CRT has come to be obtained.

【0003】以下、図面を参照しながら、従来の液晶表
示装置を説明する。図10は、従来の液晶表示装置の画
素部分の拡大図、図11及び図12はそれぞれ図10の
A−A’線及びB−B’線断面図である。
A conventional liquid crystal display device will be described below with reference to the drawings. 10 is an enlarged view of a pixel portion of a conventional liquid crystal display device, and FIGS. 11 and 12 are cross-sectional views taken along the line AA ′ and the line BB ′ of FIG. 10, respectively.

【0004】図10、図11及び図12において、25
は金属膜よりなる走査信号配線及びこの走査信号配線と
同時に形成される薄膜トランジスタのゲート電極
(G)、26は金属膜や透明導電膜よりなる画像信号配
線および薄膜トランジスタ28のソース(S)電極、2
7は透明導電膜よりなる画素電極及び薄膜トランジスタ
のドレイン(D)電極、28はトップゲート型の薄膜ト
ランジスタ、29は薄膜トランジスタ28の半導体膜、
30は薄膜トランジスタ28のチャネル部に入射する光
を遮光するための遮光用金属膜、31は絶縁膜、32は
薄膜トランジスタ28のゲート絶縁膜、33は液晶材
料、34は対向電極、35、36は透明ガラス基板、C
LCは画素電極27と対向電極34との間の液晶容量、C
S は画素電極27と隣接する走査信号配線25’との間
の付加容量である。
25 in FIGS. 10, 11 and 12.
Is a scanning signal line made of a metal film and a gate electrode (G) of a thin film transistor formed at the same time as the scanning signal line. 26 is an image signal line made of a metal film or a transparent conductive film and a source (S) electrode of a thin film transistor 28.
7 is a pixel electrode formed of a transparent conductive film and a drain (D) electrode of a thin film transistor, 28 is a top-gate thin film transistor, 29 is a semiconductor film of the thin film transistor 28,
Reference numeral 30 is a light-shielding metal film for blocking light incident on the channel portion of the thin film transistor 28, 31 is an insulating film, 32 is a gate insulating film of the thin film transistor 28, 33 is a liquid crystal material, 34 is a counter electrode, and 35 and 36 are transparent. Glass substrate, C
LC is a liquid crystal capacitance between the pixel electrode 27 and the counter electrode 34, C
S is an additional capacitance between the pixel electrode 27 and the adjacent scanning signal line 25 '.

【0005】このアクティブマトリックス方式の液晶表
示装置では、走査信号配線25から供給される走査信号
によってトップゲート型の薄膜トランジスタ28がスイ
ッチングされ、画像信号配線26の信号電圧をドレイン
(D)電極の延長である画素電極27に印加することに
より、画素電極27と対向電極34との間に保持された
液晶材料に電圧を印加して、画像の表示を行うものであ
る。付加容量CS は液晶材料33に印加する電圧を一定
時間保持するための電荷保持用の容量である。
In this active matrix type liquid crystal display device, the top gate type thin film transistor 28 is switched by the scanning signal supplied from the scanning signal wiring 25, and the signal voltage of the image signal wiring 26 is extended by the drain (D) electrode. By applying a voltage to a certain pixel electrode 27, a voltage is applied to the liquid crystal material held between the pixel electrode 27 and the counter electrode 34 to display an image. The additional capacitance C S is a charge holding capacitance for holding the voltage applied to the liquid crystal material 33 for a certain period of time.

【0006】上述のような液晶表示装置では、図11に
示すように、画素電極27と隣接する画素電極27’が
絶縁膜31とゲート絶縁膜32にはさまれた同じレベル
の層であるため、この両者が短絡しないように、両者間
に充分な間隔L1を設ける必要があり、このため画素電
極27を充分大きくすることができず、その結果画素部
分の開口率が低下するという問題があった。特に、小型
・高精細の液晶表示装置では、その影響が顕著であっ
た。
In the liquid crystal display device as described above, as shown in FIG. 11, the pixel electrode 27 'adjacent to the pixel electrode 27 is a layer of the same level sandwiched between the insulating film 31 and the gate insulating film 32. However, it is necessary to provide a sufficient space L1 between them so that they are not short-circuited. Therefore, the pixel electrode 27 cannot be made sufficiently large, resulting in a problem that the aperture ratio of the pixel portion decreases. It was Especially, in a small-sized and high-definition liquid crystal display device, the influence was remarkable.

【0007】また、図12に示すように、画素電極27
と画像信号配線26、26’も絶縁膜31とゲート絶縁
膜32にはさまれた同じレベルの層であるため、両者間
に充分な間隔L2を設ける必要があり、この理由によっ
ても画素部分の開口率が低下するという問題があった。
Further, as shown in FIG. 12, the pixel electrode 27
Since the image signal wirings 26 and 26 'are also layers of the same level sandwiched between the insulating film 31 and the gate insulating film 32, it is necessary to provide a sufficient space L2 between them, and for this reason also There is a problem that the aperture ratio is lowered.

【0008】すなわち、従来の液晶表示装置では、図1
3に示すように、画素電極27部分における光の透過可
能な領域はP1で示す斜線部分の領域しかなく、画素部
分の開口率が小さいものであった。
That is, in the conventional liquid crystal display device, as shown in FIG.
As shown in FIG. 3, the light-transmittable area in the pixel electrode 27 portion was only the shaded area indicated by P1, and the aperture ratio of the pixel portion was small.

【0009】このような問題を解決するために、本出願
人は、特願平5−330785号において、図14、図
15、図16及び図17に示すように、画素電極を上層
画素電極43と下層画素電極44で構成し、下層画素電
極44を上層画素電極43よりも走査信号配線41側及
び画像信号配線42、42’側に張り出して形成すると
共に、金属膜から成る走査信号配線41と透明導電膜か
ら成る付加容量用電極47を設けた液晶表示装置を提案
した。上層画素電極43と下層画素電極44との間に
は、窒化シリコン膜や酸化タンタル膜などから成る絶縁
膜48を介在させてある。上層画素電極43及び下層画
素電極44は、例えばITO(酸化インジウム錫)や酸
化錫(SnO)などの透明導電膜で形成される。この場
合、上層画素電極43と下層画素電極44がゲート絶縁
膜48を介して大きな面積で重なっているため、下層画
素電極44と対向電極51との間の液晶容量CLC2 に比
べて上下画素電極43、44間の重なり容量Caが大幅
に大きくなり、その結果、下層画素電極44も上層画素
電極43と同じ働きをするようになる。
In order to solve such a problem, the present applicant discloses in Japanese Patent Application No. 5-330785 that a pixel electrode is an upper layer pixel electrode 43, as shown in FIGS. 14, 15, 16 and 17. And the lower layer pixel electrode 44. The lower layer pixel electrode 44 is formed so as to project to the scanning signal wiring 41 side and the image signal wirings 42, 42 ′ side with respect to the upper layer pixel electrode 43, and the scanning signal wiring 41 made of a metal film is formed. A liquid crystal display device provided with an additional capacitance electrode 47 formed of a transparent conductive film was proposed. An insulating film 48 made of a silicon nitride film, a tantalum oxide film, or the like is interposed between the upper layer pixel electrode 43 and the lower layer pixel electrode 44. The upper layer pixel electrode 43 and the lower layer pixel electrode 44 are formed of a transparent conductive film such as ITO (indium tin oxide) or tin oxide (SnO). In this case, since the upper layer pixel electrode 43 and the lower layer pixel electrode 44 overlap each other with a large area via the gate insulating film 48, the upper and lower pixel electrodes are compared with the liquid crystal capacitance C LC2 between the lower layer pixel electrode 44 and the counter electrode 51. The overlap capacitance Ca between 43 and 44 is significantly increased, and as a result, the lower layer pixel electrode 44 also has the same function as the upper layer pixel electrode 43.

【0010】なお、図15は図14のA−A’線断面
図、図16は図14のB−B’線断面図、図17は図1
4のC−C’線断面図である。
FIG. 15 is a sectional view taken along the line AA 'in FIG. 14, FIG. 16 is a sectional view taken along the line BB' in FIG. 14, and FIG.
4 is a sectional view taken along line CC ′ of FIG.

【0011】このように、画素電極を上層画素電極43
と下層画素電極44で構成すると共に、下層画素電極4
4を走査信号配線41及び画像信号配線42、42’側
に張り出して形成すると、図18に示すように、画素電
極をP1の領域のみならず、P2、P3及びP4の領域
まで広げることができ、画素部分の開口率を向上させる
ことができる。
As described above, the pixel electrode is replaced by the upper layer pixel electrode 43.
And the lower layer pixel electrode 44, and the lower layer pixel electrode 4
When 4 is formed so as to project to the scanning signal wiring 41 and the image signal wirings 42 and 42 ', the pixel electrode can be expanded not only to the region of P1 but also to the regions of P2, P3 and P4 as shown in FIG. The aperture ratio of the pixel portion can be improved.

【0012】ところが、この従来の液晶表示装置は、上
層画素電極43と下層画素電極44は透明導電膜で形成
されるものの、この上層画素電極43と下層画素電極4
4は大部分の領域で重なりあっていることから、この重
なり部分では画素電極の実質的な膜厚は厚くなる。ま
た、上層画素電極43と下層画素電極44を設けると、
屈折率が異なる複数の層を光が透過することになり、界
面部分での光の反射が発生する。その結果、この従来の
液晶表示装置では、光の透過率が5〜10%低下し、表
示装置全体が暗くなるという問題があった。
However, in this conventional liquid crystal display device, although the upper layer pixel electrode 43 and the lower layer pixel electrode 44 are formed of a transparent conductive film, the upper layer pixel electrode 43 and the lower layer pixel electrode 4 are formed.
Since 4 is overlapped in most areas, the substantial film thickness of the pixel electrode is increased in this overlap area. Further, when the upper layer pixel electrode 43 and the lower layer pixel electrode 44 are provided,
Light is transmitted through a plurality of layers having different refractive indexes, and light is reflected at the interface. As a result, this conventional liquid crystal display device has a problem that the light transmittance is reduced by 5 to 10% and the entire display device becomes dark.

【0013】[0013]

【発明の目的】本発明に係る液晶表示装置は、このよう
な従来装置の問題点に鑑みて発明されたものであり、画
素部分の開口率が大きく、しかも光の透過率が低減する
ことのない明るい液晶表示装置を提供することを目的と
する。
SUMMARY OF THE INVENTION The liquid crystal display device according to the present invention has been invented in view of the above problems of the conventional device, and has a large aperture ratio in the pixel portion and a reduced light transmittance. It is an object to provide a bright liquid crystal display device.

【0014】[0014]

【課題を解決するための手段】上記目的を達成するため
に、本発明に係る液晶表示装置では、複数の画像信号配
線と、複数の走査信号配線を交差して設け、この画像信
号配線と走査信号配線との交差部に 画素電極とこの画
素電極に画像信号を供給するスイッチング素子とをマト
リックス状に設け、前記画素電極と、この画素電極に対
向して設けられた対向電極との間に液晶材料が保持され
ている液晶表示装置において、前記画素電極の裏面側
に、この画素電極よりも前記走査信号配線側及び/又は
前記画像信号配線側に張り出した帯状の第2の画素電極
を設けた。
In order to achieve the above object, in a liquid crystal display device according to the present invention, a plurality of image signal wirings and a plurality of scanning signal wirings are provided so as to intersect with each other, and the image signal wirings and scanning are performed. Pixel electrodes and switching elements for supplying image signals to the pixel electrodes are provided in a matrix at intersections with the signal lines, and a liquid crystal is provided between the pixel electrodes and a counter electrode provided so as to face the pixel electrodes. In a liquid crystal display device in which a material is held, a strip-shaped second pixel electrode protruding from the pixel electrode to the scanning signal wiring side and / or the image signal wiring side is provided on the back surface side of the pixel electrode. .

【0015】[0015]

【作用】上記のように、画素電極の裏面側に、この画素
電極から張り出した第2の画素電極を設けると、画素部
の開口率が向上すると共に、画素部分の殆どの領域は一
層の透明導電膜で構成されることから、光透過率が向上
し、もって全体として明るい液晶表示装置になる。
As described above, when the second pixel electrode protruding from the pixel electrode is provided on the back surface side of the pixel electrode, the aperture ratio of the pixel portion is improved and most of the pixel portion is further transparent. Since it is made of a conductive film, the light transmittance is improved, and the liquid crystal display device is bright as a whole.

【0016】[0016]

【実施例】以下、本発明の実施例を添付図面に基づき詳
細に説明する。図1は、本発明に係る液晶表示装置の一
実施例を示す図であり、図2は図1のA−A’線断面
図、図3は図1のB−B’線断面図である。図1ないし
図3において、1は走査信号配線、2は画像信号配線、
3は画素電極、4は第2の画素電極、5は薄膜トランジ
スタから成るスイッチング素子、6は保護膜、7は液晶
材料、8は対向電極、9、10は透明ガラス基板であ
る。
Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. 1 is a diagram showing an embodiment of a liquid crystal display device according to the present invention, FIG. 2 is a sectional view taken along the line AA ′ of FIG. 1, and FIG. 3 is a sectional view taken along the line BB ′ of FIG. . 1 to 3, 1 is a scanning signal wiring, 2 is an image signal wiring,
3 is a pixel electrode, 4 is a second pixel electrode, 5 is a switching element composed of a thin film transistor, 6 is a protective film, 7 is a liquid crystal material, 8 is a counter electrode, and 9 and 10 are transparent glass substrates.

【0017】走査信号配線1と画像信号配線2は、それ
ぞれ複数設けられており、この走査信号配線1と画像信
号配線2の各交差部分に画素電極3およびスイッチング
素子5が設けられている。
A plurality of scanning signal wirings 1 and a plurality of image signal wirings 2 are provided, and a pixel electrode 3 and a switching element 5 are provided at each intersection of the scanning signal wirings 1 and the image signal wirings 2.

【0018】スイッチング素子5は、走査信号配線1に
連続して形成されたゲート電極(G)、ゲート絶縁膜1
1、チャネル部となる半導体膜12、画像信号配線2に
連続して形成されたソース電極(S)、画素電極3に連
続して形成されたドレイン電極(D)で主として構成さ
れる。このスイッチング素子5は、ゲート電極(G)が
下方に位置し、ソース電極(S)及びドレイン電極
(D)が上方に位置する逆スタガ構造に形成される。こ
のようにスイッチング素子5を逆スタガ構造に形成する
と、従来必要であったトランジスタのチャネル部の遮光
用金属膜が不要になると共に、後述する付加容量用電極
を透明導電膜で同時に形成できるようになる。
The switching element 5 includes a gate electrode (G) and a gate insulating film 1 formed continuously on the scanning signal line 1.
1, a semiconductor film 12 serving as a channel portion, a source electrode (S) continuously formed on the image signal wiring 2, and a drain electrode (D) continuously formed on the pixel electrode 3. The switching element 5 is formed in an inverted stagger structure in which the gate electrode (G) is located below and the source electrode (S) and the drain electrode (D) are located above. When the switching element 5 is formed in the inverted staggered structure in this manner, the light shielding metal film of the channel portion of the transistor which is conventionally required is not necessary, and the additional capacitance electrode described later can be simultaneously formed by the transparent conductive film. Become.

【0019】走査信号配線1およびゲート電極(G)
は、アルミニウム(Al)やタンタル(Ta)などの金
属薄膜で形成される。ゲート絶縁膜11は、窒化シリコ
ン(SiNx )、酸化シリコン(SiO2 )、酸化タン
タル(TaOx )などで形成される。半導体膜12はア
モルファスシリコン膜などで形成される。
Scan signal wiring 1 and gate electrode (G)
Is formed of a metal thin film such as aluminum (Al) or tantalum (Ta). The gate insulating film 11 is formed of silicon nitride (SiN x ), silicon oxide (SiO 2 ), tantalum oxide (TaO x ), or the like. The semiconductor film 12 is formed of an amorphous silicon film or the like.

【0020】画像信号配線2、ソース電極(S)及びド
レイン電極(D)は、アルミニウム(Al)、チタン
(Ti)、モブリブデン(Mo)などの金属膜やこれら
金属膜とITOなどの透明導電膜との積層膜で形成され
る。画素電極3および第2の画素電極4はITOなどの
透明導電膜で形成される。
The image signal wiring 2, the source electrode (S) and the drain electrode (D) are metal films such as aluminum (Al), titanium (Ti), and mobribden (Mo), or these metal films and a transparent conductive film such as ITO. And a laminated film of. The pixel electrode 3 and the second pixel electrode 4 are formed of a transparent conductive film such as ITO.

【0021】画素電極3と隣接する走査信号配線1’と
の間で、液晶材料7に印加する電圧を一定期間保持する
ための付加容量CS が、画素電極3と対向電極8との間
で液晶容量CLC1 が、第2の画素電極4と対向電極8と
の間で液晶容量CLC2 が、画素電極3と第2の画素電極
4との間で重なり容量Caがそれぞれ形成される。
Between the pixel electrode 3 and the adjacent scanning signal line 1 ′, an additional capacitance C S for holding the voltage applied to the liquid crystal material 7 for a certain period is provided between the pixel electrode 3 and the counter electrode 8. The liquid crystal capacitance C LC1 is formed between the second pixel electrode 4 and the counter electrode 8 and the liquid crystal capacitance C LC2 is overlapped between the pixel electrode 3 and the second pixel electrode 4 to form a capacitance Ca.

【0022】この液晶表示装置では、逆スタガ型の薄膜
トランジスタ5によりスイッチングされ、画像信号配線
2の信号電圧をドレイン電極(D)の延長である画素電
極3に印加することにより、画素電極3及び第2の画素
電極4と対向電極11との間に保持された液晶材料7に
電圧を印加して画像の表示を行う。
In this liquid crystal display device, switching is performed by the thin film transistor 5 of the inverted stagger type, and the signal voltage of the image signal wiring 2 is applied to the pixel electrode 3 which is an extension of the drain electrode (D). A voltage is applied to the liquid crystal material 7 held between the second pixel electrode 4 and the counter electrode 11 to display an image.

【0023】また、画素電極3の裏面側に、絶縁膜11
を介して帯状の第2の画素電極4が走査信号配線1及び
画像信号配線2側に張り出して形成されている。この場
合、画素電極3と第2の画素電極4は、画素電極3と第
2の画素電極4との間の重なり容量Caが第2の画素電
極と対向電極との間の液晶容量CLC2 の2倍以上となる
ように形成することが望ましい。このように第2の画素
電極4を画素電極3と第2の画素電極4との間の重なり
容量Caが第2の画素電極4と対向電極との間の液晶容
量CLC2 の2倍以上となるように形成すると、第2の画
素電極4にも画素電極3の2/3以上の電圧が印加され
るようになり、第2の画素電極4も画素電極3と同じ働
きをするようになる。
Further, the insulating film 11 is formed on the back surface side of the pixel electrode 3.
A band-shaped second pixel electrode 4 is formed so as to project toward the scanning signal line 1 and the image signal line 2 via the. In this case, in the pixel electrode 3 and the second pixel electrode 4, the overlapping capacitance Ca between the pixel electrode 3 and the second pixel electrode 4 is equal to the liquid crystal capacitance C LC2 between the second pixel electrode and the counter electrode. It is desirable to form it so that it is double or more. In this way, the overlap capacitance Ca between the second pixel electrode 4 and the second pixel electrode 4 is twice or more the liquid crystal capacitance C LC2 between the second pixel electrode 4 and the counter electrode. When it is formed as described above, the voltage of ⅔ or more of the pixel electrode 3 is applied to the second pixel electrode 4, and the second pixel electrode 4 also has the same function as the pixel electrode 3. .

【0024】なお、帯状の第2の画素電極4を走査信号
配線側のみに設けても、その限りにおいて、画素部分の
開口率を向上させることができる。
Even if the strip-shaped second pixel electrode 4 is provided only on the scanning signal wiring side, the aperture ratio of the pixel portion can be improved as long as it is provided.

【0025】図4〜図6は、他の実施例を示す図であ
る。この実施例では、画素電極3の一方端を隣接する走
査信号配線1’上の途中まで延在するように形成すると
共に、画素電極3の他方端を走査信号配線1に近接して
設けている。画素電極3と走査信号配線1は絶縁膜11
を介して形成される異なるレベルの層であるため、画素
電極3の他方端は走査信号配線1に近接して設けること
ができる。
4 to 6 are views showing another embodiment. In this embodiment, one end of the pixel electrode 3 is formed so as to extend midway on the adjacent scanning signal line 1 ′, and the other end of the pixel electrode 3 is provided close to the scanning signal line 1. . The pixel electrode 3 and the scanning signal line 1 are formed of an insulating film 11
The other end of the pixel electrode 3 can be provided in the vicinity of the scanning signal line 1 since the layers are of different levels.

【0026】また、この実施例では、帯状の第2の画素
電極4を画素電極3の裏面側に、この画素電極3よりも
画像信号配線2側に張り出して形成している。
Further, in this embodiment, the strip-shaped second pixel electrode 4 is formed on the back surface side of the pixel electrode 3 so as to project to the image signal wiring 2 side from the pixel electrode 3.

【0027】この場合も、第2の画素電極4が画素電極
3と同じ働きをするように、画素電極3と第2の画素電
極4との間の重なり容量Caを第2の画素電極4と対向
電極11との間の液晶容量CLC2 の2倍以上となるよう
に形成する。
In this case as well, the overlapping capacitance Ca between the pixel electrode 3 and the second pixel electrode 4 is set to the second pixel electrode 4 so that the second pixel electrode 4 functions the same as the pixel electrode 3. The liquid crystal capacitance C LC2 between the counter electrode 11 and the counter electrode 11 is twice or more.

【0028】このように、画素電極3を走査信号配線1
に近接して設けると共に、この画素電極3の裏面側に帯
状の第2の画素電極4を画像信号配線2、2’側に張り
出して設けるても、画素部分の開口率を挙げることがで
きると共に、画素部分の光透過率を上げることができ
る。
In this way, the pixel electrode 3 is connected to the scanning signal wiring 1
If the strip-shaped second pixel electrode 4 is provided on the back surface side of the pixel electrode 3 so as to project toward the image signal wirings 2 and 2 ′, the aperture ratio of the pixel portion can be increased. The light transmittance of the pixel portion can be increased.

【0029】図7〜図9は、その他の実施例を示す図で
ある。この実施例では画素電極3の裏面側に帯状の第2
の画素電極4をロ字状に設けている。このように、第2
の画素電極4をロ字状に設けると、画素電極4の裏面側
の比較的広い領域にわたって画素電極と第2の画素電極
4が重なり合うことから、第2の画素電極4の一部が断
線しても、その他の部分は有効に機能させることができ
る。
7 to 9 are diagrams showing other embodiments. In this embodiment, the strip-shaped second electrode is formed on the back surface side of the pixel electrode 3.
The pixel electrode 4 is provided in a square shape. Thus, the second
If the pixel electrode 4 is provided in a square shape, the pixel electrode and the second pixel electrode 4 overlap each other over a relatively wide area on the back surface side of the pixel electrode 4, so that part of the second pixel electrode 4 is disconnected. However, the other parts can function effectively.

【0030】[0030]

【発明の効果】以上のように、本発明に係る液晶表示装
置によれば、画素電極の裏面側に、この画素電極よりも
走査信号配線側及び/又は画像信号配線側に張り出した
帯状の第2の画素電極を設けたことから、画素電極と走
査信号配線との間にも画素電極が存在し、実質的に画素
電極の面積が広くなり、画素部の開口率が向上すると共
に、画素電極の大部分は一層の透明導電膜で構成される
ことから、屈折率が相違する複数層を積層した場合の反
射や、厚みが増すことによる光の透過率の低下も防止で
き、全体として明るい液晶表示装置となる。
As described above, according to the liquid crystal display device of the present invention, the strip-shaped first portion is formed on the back surface side of the pixel electrode and extends over the scanning signal wiring side and / or the image signal wiring side with respect to the pixel electrode. Since the second pixel electrode is provided, the pixel electrode also exists between the pixel electrode and the scanning signal wiring, the area of the pixel electrode is substantially increased, and the aperture ratio of the pixel portion is improved. Since most of them are composed of a single layer of transparent conductive film, it is possible to prevent reflection when a plurality of layers having different refractive indexes are laminated and decrease in light transmittance due to increase in thickness, and thus a bright liquid crystal as a whole. It becomes a display device.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る液晶表示装置の一実施例を示す図
である。
FIG. 1 is a diagram showing an embodiment of a liquid crystal display device according to the present invention.

【図2】図1のA−A’線断面図である。FIG. 2 is a sectional view taken along line A-A 'of FIG.

【図3】図1のB−B’線断面図である。FIG. 3 is a sectional view taken along line B-B 'of FIG.

【図4】本発明に係る液晶表示装置の他の実施例を示す
図である。
FIG. 4 is a diagram showing another embodiment of the liquid crystal display device according to the present invention.

【図5】図4のA−A’線断面図である。FIG. 5 is a sectional view taken along line A-A ′ of FIG. 4;

【図6】図4のB−B’線断面図である。6 is a cross-sectional view taken along the line B-B ′ of FIG.

【図7】本発明に係る液晶表示装置のその他の実施例を
示す図である。
FIG. 7 is a diagram showing another embodiment of the liquid crystal display device according to the present invention.

【図8】図7のA−A’線断面図である。8 is a cross-sectional view taken along the line A-A ′ of FIG.

【図9】図7のB−B’線断面図である。9 is a cross-sectional view taken along the line B-B ′ of FIG. 7.

【図10】従来の液晶表示装置の画素部分の拡大図であ
る。
FIG. 10 is an enlarged view of a pixel portion of a conventional liquid crystal display device.

【図11】図10のA−A’線断面図である。11 is a sectional view taken along line A-A 'of FIG.

【図12】図10のB−B’線断面図である。12 is a sectional view taken along line B-B ′ of FIG.

【図13】従来の液晶表示装置における画素部分の開口
部を示す図である。
FIG. 13 is a diagram showing an opening of a pixel portion in a conventional liquid crystal display device.

【図14】従来の他の液晶表示装置の画素部分を示す図
である。
FIG. 14 is a diagram showing a pixel portion of another conventional liquid crystal display device.

【図15】図15のA−A’線断面図である15 is a cross-sectional view taken along the line A-A ′ of FIG.

【図16】図15のB−B’線断面図である。16 is a cross-sectional view taken along the line B-B ′ of FIG.

【図17】図15のC−C’線断面図である。17 is a cross-sectional view taken along the line C-C ′ of FIG.

【図18】従来の他の液晶表示装置における画素部分の
開口率を示す図である。
FIG. 18 is a diagram showing an aperture ratio of a pixel portion in another conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

1・・・走査信号配線、2・・・画像信号配線、3・・
・画素電極、4・・・第2の画素電極、5・・・スイッ
チング素子、6・・・保護膜、7・・・液晶材料、8・
・・対向電極
1 ... Scan signal wiring, 2 ... Image signal wiring, 3 ...
・ Pixel electrode, 4 ... Second pixel electrode, 5 ... Switching element, 6 ... Protective film, 7 ... Liquid crystal material, 8.
..Counter electrodes

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 複数の画像信号配線と、複数の走査信号
配線とを交差して設け、この画像信号配線と走査信号配
線との交差部に、画素電極とこの画素電極に画像信号を
供給するスイッチング素子とをマトリックス状に設け、
前記画素電極とこの画素電極に対向して設けられた対向
電極との間に液晶材料が保持されている液晶表示装置に
おいて、前記画素電極の裏面側に、この画素電極よりも
前記走査信号配線側及び/又は前記画像信号配線側に張
り出した帯状の第2の画素電極を設けたことを特徴とす
る液晶表示装置。
1. A plurality of image signal wirings and a plurality of scanning signal wirings are provided so as to intersect with each other, and a pixel electrode and an image signal are supplied to the pixel electrode at the intersection of the image signal wirings and the scanning signal wirings. Provided with switching elements in a matrix,
In a liquid crystal display device in which a liquid crystal material is held between the pixel electrode and a counter electrode provided so as to face the pixel electrode, on the back surface side of the pixel electrode, on the scanning signal wiring side with respect to the pixel electrode. And / or a liquid crystal display device having a strip-shaped second pixel electrode projecting to the image signal wiring side.
【請求項2】 前記画素電極と前記第2の画素電極との
間の重なり容量Caが、前記第2の画素電極と前記対向
電極との間の液晶容量CLC2 の2倍以上であることを特
徴とする請求項1に記載した液晶表示装置。
2. The overlap capacitance Ca between the pixel electrode and the second pixel electrode is at least twice the liquid crystal capacitance C LC2 between the second pixel electrode and the counter electrode. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is a liquid crystal display device.
【請求項3】 前記スイッチング素子が逆スタガ型薄膜
トランジスタであることを特徴とする請求項1に記載し
た液晶表示装置。
3. The liquid crystal display device according to claim 1, wherein the switching element is an inverted staggered thin film transistor.
JP16336795A 1995-06-29 1995-06-29 Liquid crystal display device Pending JPH0915621A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16336795A JPH0915621A (en) 1995-06-29 1995-06-29 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16336795A JPH0915621A (en) 1995-06-29 1995-06-29 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH0915621A true JPH0915621A (en) 1997-01-17

Family

ID=15772544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16336795A Pending JPH0915621A (en) 1995-06-29 1995-06-29 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH0915621A (en)

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US6806499B2 (en) 2000-03-13 2004-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
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